Chee-Wee Liu (National Taiwan University)
Chee-Wee Liu - National Taiwan University
Chee-Wee Liu is currently a professor of electrical engineering with the joint appointment of Graduate Institute of Electronics Engineering, Graduate Institute of Photonics and Optoelectronics Engineering, and Center of Condensed Matter Sciences at National Taiwan University, Taiwan. He is also a senior researcher and deputy general director of National Nano Device Labs, Taiwan. He received his B.S. in electrical engineering at National Taiwan University in 1985 and Ph.D. in electrical engineering at Princeton University in 1994.
Reflecting the diversity of industrial need in Taiwan, his research covers strained Si/Ge MOSFETs, IGZO TFTs, and solar cells. Due to his extensive experience on Si/Ge chemical vapor deposition and knowledge of SiGe materials, he achieved a record high electron mobility of 2x106 cm2/Vs of Si with fractional quantum hall effects. His early work on SiGe quantum well PFETs is now in production. Currently, he focuses on the process and carrier transport of Ge NFETs, as an alternative to III-V NFET on Si. Liu made the first triangular gate-all-around Ge channel NFETs and PFETs on Si to enhance the electrostatics and mobility. He developed high K dielectrics on Ge with the record equivalent oxide thickness of 0.39 nm. He pioneered the analytic modeling of strain fields around through-Si-Vias (3D IC) and dislocation stressors. For add-on functionality and material characterization, he invented the metal-insulator-semiconductor structures for light emitting diodes and detectors. Si, Ge, SiGe, and SiC have been all demonstrated. The aim of IGZO TFT is to increase the mobility (Ion) and to reduce the Ioff. The IGZO driver can serve the display applications beyond the amorphous Si and poly Si. The key issue is to reduce or engineer the defects in such a complicated system. His initial effort on the solar cells was the micromorph which was commonly believed to have the low cost advantages years ago. He worked with the largest amorphous thin film solar company in Taiwan and built a 10 KW panel on roof in campus. He also found the Al2O3 passivation on CIGS surface and demonstrated a bifacial CIGS and Si cell. For Si wafer cells, the co-activation of implanted emitters and back surface fields is achieved in n-wafers with efficiency more than 18%. As a short summary, he has 170 international SCI journal papers with the h-index of 15, 200 conference papers, 34 Taiwan patents, and 17 U.S. patents.
Liu received the 2012 Outstanding Research Award, College of Electrical Engineering and Computer Science, National Taiwan University, 2003-2005 Outstanding Research Award, National Science Council, Taiwan, 2003/2004 Outstanding Research Award, ERSO/ITRI, Taiwan, and Semiconductor Research Corporation, Cross-discipline Semiconductor Research Award in 2002. He has served as a Technical Program Committee (TPC) member for many
SiGe-related conferences over the course of several years, such as SiGe: Materials, Processing, and Devices in ECS, international SiGe technology and device meetings, and International Conference on Silicon Epitaxy and Heterostructures.
In the devices community, Liu has served as TPC of IEDM (2008-2010), VLSI/TSA (2003, 2004, and 2008-2012), ISTDM 2008, and IEDM subcommittee chair 2010. He also organized various bilateral workshops (2010 nano/micro electronics and embedded system, Pilani, India; 2010 TW-Russia workshop, 2008/2009 NSC-JST nano device workshop, 2009/2012 EU-Taiwan 450 mm workshop. He is an editor of IEEE Transactions on Material and Device Reliability.
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“Expand MRS membership and participation worldwide. I gave my first oral presentation in an MRS symposium in Boston in 1991 as an international student at Princeton University. I never saw such a scientific meeting in my hometown at that time, but now more and more material research activities occur in Asia due to its large population and rapid economic development. MRS participation can strengthen the scientific and technical contents of such activities, and attract more talents in Asia to join MRS, particularly the younger generation. Webinars, video lecture/talks, and website publications are immediate action items. MRS can provide seamless communication in global material societies and create the effective research collaboration.
Interact actively with other societies in the supply chain. Material is most important for industrial development, and the linkage with other societies such as tool, device, and even end-product societies, can understand the material position in a much wider scope. The material research results can be rapidly known and related extension work can be carried out in other societies by the linkage. Joint symposia and publications with other societies should be promoted in MRS activities.
Draw the attention of industrial members internationally. All the MRS activities need a budget for support. Membership fees and sponsorships of companies can enrich the meetings and services of MRS with high quality. With sufficient budget, we can provide more excellent services to our members and lower the membership fee of the members in difficult economical situation. The expected positive feedback not only sustains MRS activities worldwide, but also strengthens the relationship between personal members and industrial members.”