The 55th Electronic Materials Conference (EMC) is the premier annual forum on the preparation and characterization of electronic materials. EMC, held June 26-28, 2013, at the University of Notre Dame, featured a plenary session, parallel topical sessions, a poster session and an industrial exhibition, and immediately followed the Device Research Conference. 

Student Award Winners 

  • Santino Carnevale, The Ohio State University
    "Polarization-Induced pn-Diodes in Wide Band Gap Nanowires with Ultraviolet Electroluminescence"
    Roberto Myers, advisor
     
  • Hari Nair, University of Texas at Austin
    "Thermal Annealing Induced Optical Quality Enhancement in GaSb-Based Dilute-Nitrides"
    Seth Bank, advisor
     
  • Christopher Yerino, Yale University
    "Tensile Strained III-V Quantum Dots on a (110) Surface: Morphology and Optical Properties"
    Minjoo Larry Lee, advisor 

 View past student award winners.

 

TMS FoundationStudent participation in this conference is partially supported by a grant from the TMS foundation.

 

 

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Conference Registration Included:

  • Conference participation
  • Conference program and abstract book
  • Welcome and poster reception (Wednesday)
  • Daily coffee breaks
  • Conference banquet (Thursday)

Registration Rates

Full conference - included one banquet ticket 

  • Regular - $650
  • Student - $350
  • Retired/Unemployed - $350

One-day conference - no banquet ticket 

  • Wednesday - $585
  • Thursday - $585
  • Friday - $585
 


Conference Banquet - Thursday, June 27

Conference attendees and companions were encouraged to attend the conference banquet held at the Center for History and Studebaker National Museum.

Cancellation Policy

To cancel all or any portion of your meeting registration order, you must notify MRS in writing of your request for a refund. The timing of your request is important in determining refund amounts. Refunds will be made upon receipt of written refund request within the following guidelines:

  • Registration (regular conference registration, student conference registration or companion registration) refund requests received up to 10 days prior to the start of the meeting:
    Refund amount requested less a $35 processing fee.
  • Refund request received less than 10 days prior to or until the conclusion of the meeting:
    Due to the guarantees required for meals and other services regular and student registrants will receive refund amount requested less $525. Companion registrations are not refundable.
  • Refund request received 1 to 29 days following the conclusion of the meeting:
    No refunds provided. During this time period, registrants may apply a portion of the non-refundable registration fee to MRS member dues or additional MRS product or service.
  • Refund request received more than 30 days after the conclusion of the meeting:
    No refunds will be provided for requests made more than 30 days after the close of the meeting

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Exhibit

Held Wednesday and Thursday, June 26-27, the EMC Exhibit offered the most direct access to researchers from around the world who were seeking technical solutions to their challenges.

EMC has a long history of promoting student involvement. Strong student participation provided exhibitors with a well-targeted opportunity to recruit top graduating students and build early relationships with future researchers seeking a career path in electronic materials.

55th EMC Exhibitors

Location

University of Notre Dame
112 N. Notre Dame Avenue
South Bend, IN, 46556 USA
574-631-5000


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Program | Plenary AddressSubmit a Paper to Journal of Electronic Materials | Topics 

 

Program

Author Index 

Plenary Address

R. Stanley Williams, Hewlett-Packard Laboratories (view bio)

Presentation: Mott Memristors, Spiking Neuristors and Electronic Action Potentials (view abstract)

Stan Williams, plenary speaker at the 55th Electronic Materials ConferenceR. Stanley Williams is an HP senior fellow and vice president at Hewlett-Packard Laboratories. He received a B.A. degree in chemical physics in 1974 from Rice University and his Ph.D. in physical phemistry from U. C. Berkeley in 1978. He was a member of technical staff at AT&T Bell Labs from 1978-1980 and a faculty member (assistant, associate and full professor) of the Chemistry Department at UCLA from 1980–1995. He joined HP Labs in 1995 to found the Quantum Science Research group, which originally focused on fundamental research at the nanometer scale.

His primary scientific research during the past 30 years has been in the areas of solid-state chemistry and physics and their applications to technology. In 2008, a team of researchers he led announced that they had built and demonstrated the first intentional memristor, the fourth fundamental electronic circuit element predicted by Prof. Leon Chua in 1971, complementing the capacitor, resistor and inductor.

He has received recognition for business, scientific and academic achievement, including being named one of the top 10 visionaries in the field of electronics in 2012 by EETimes, 2009 EETimes Innovator of the Year ACE Award, the 2007 Glenn T. Seaborg Medal for Contributions to Chemistry, the 2004 Herman Bloch Medal for Industrial Research, and the 2000 Julius Springer Award for Applied Physics. He has over 150 US patents with ~100 pending and over 400 papers published in reviewed scientific journals.

Abstract: Mott Memristors, Spiking Neuristors and Electronic Action Potentials

The current-voltage characteristic of a simple cross-point device that has a thin film of niobium dioxide, a Mott insulator, sandwiched between two metal electrodes displays a current-controlled or 'S'-type negative differential resistance (NDR) caused by Joule self-heating if the ambient temperature is below the metal-insulator transition (MIT). We derived simple analytical equations for the behavior these devices that quantitatively reproduce their experimentally measured electrical characteristics with only one fitting parameter, and found that the resulting dynamical model was mathematically equivalent to the "memristive system" formulation of Leon Chua and Steve Kang from 1976; we thus call these devices "Mott Memristors". Moreover, these devices display the property of "local activity"; because of the NDR, they are capable of injecting energy into a circuit (converting DC to AC electrical power) over a limited biasing range. We built and demonstrated Pearson-Anson oscillators based on a parallel circuit of one Mott memristor and one capacitor, and were able to quantitatively model the dynamical behavior of the circuit, including the subnanosecond and subpicoJoule memristor switching time and energy, using SPICE. We then built a neuristor, an active subcircuit originally proposed by Hewitt Crane in 1960 without an experimental implementation, using two Mott memristors and two capacitors. The neuristor electronically emulates the Hodgkin- Huxley model of the axon action potential of a neuron, which has been recently shown by Chua et al. to be a circuit with two parallel memristors, and we show experimental results that are quantitatively matched by SPICE simulations of the output bifurcation, signal gain and spiking behavior that are believed to be the basis for computation in biological systems that are produced by this inorganic and electronic system.



Submit Your 55th EMC Paper to Journal of Electronic Materials

A special issue of the Journal of Electronic Materials will be published with peer-reviewed papers from the 55th Electronic Materials Conference.

  • Submit your article at jems.edmgr.com
  • Be sure to select the category 2013 EMC
  • 2013 special issue editors: Joshua Caldwell, Oana Jurchescu, Shadi Shahedipour-Sandvik, Grace Xing, Joshua Zide, Xiuling Li and Jamie Phillips
  • Questions? Contact Editor-in-Chief Suzanne Mohney 

A FREE Springer book (author’s choice, up to $250 in value) will be awarded for the best paper from this issue!

 



Topics

Energy Conversion and Storage Materials
Wide-Bandgap Materials
Enabling Technologies
Nanoscale Science and Technology in Materials
Organic Materials and Thin-Film Technology 

ENERGY CONVERSION AND STORAGE MATERIALS

Photovoltaics—Organic and Hybrid 

Next-generation Solar-cell Materials and Devices 

Thermoelectrics and Thermionics  

Ionic Conductors for Solid-oxide Fuel Cells and Batteries 

Highly Mismatched Dilute Alloys 

WIDE-BANDGAP MATERIALS

Group-III Nitrides—Growth, Processing, Characterization, Theory and Devices 

Indium Nitride—Growth, Processing, Characterization, Theory and Devices 

Silicon Carbide—Growth, Processing, Characterization, Theory and Devices 

Oxide Semiconductors—Growth, Doping, Defects, Nanostructures and Devices  

Point Defects, Doping and Extended Defects  

ENABLING TECHNOLOGIES 

Embedded Nanoparticles and Rare-earth Materials in III-V Semiconductors  

Metamaterials and Materials for THz, Plasmonics and Polaritons 

Epitaxial Materials and Devices  

Narrow-bandgap Materials and Devices  

Dilute Nitride Semiconductors  

Compound Semiconductor Growth on Si Substrates and Si-based Heterojunctions   

Oxide Thin-film Integration—Alternative Dielectrics, Epitaxial Oxides, Multifunctional Oxides, Superlattices and Metal Gates  

Nondestructive Testing and In Situ Monitoring and Control   

Contacts to Semiconductor Epilayers, Nanowires, Nanotubes and Organic Films  

Semiconductor Processing—Oxidation, Passivation and Etching  

Materials Integration—Wafer Bonding and Engineered Substrates 

Nanomagnetic, Magnetic Memory and Spintronic Materials  

NANOSCALE SCIENCE AND TECHNOLOGY IN MATERIALS 

Graphene, BN, MoS2 and Other 2D Materials and Devices  

Carbon Nanotubes—Growth, Processing, Characterization and Devices   

Nanowires—Growth, Processing, Characterization and Devices   

Low-dimensional Structures—Quantum Dots, Wires and Wells  

Nanoscale Characterization—Scanning Probes, Electron Microscopy and Other Techniques  

ORGANIC MATERIALS AND THIN-FILM TECHNOLOGY 

Biomaterials and Interfaces 

Molecular Electronics and OLEDs—Devices, Materials and Sensors 

Organic Thin-film and Crystalline Transistors—Devices, Materials and Processing  

Flexible and Printed Thin-film Electronics  

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Officers  

Christian Wetzel, Rensselaer, Chair
Andrew Allerman, Sandia National Laboratory, Vice Chair
Jamie Phillips, University of Michigan, Secretary
David Janes, Purdue University, Treasurer

Ex-Officio Members


Ted Harman, Massachusetts Institute of Technology: Lincoln Laboratory, Past Editor-JEM
Suzanne Mohney, Pennsylvania State University, Editor-JEM
Zi-Kui Liu, The Pennsylvania State University, Chair EMPMD
Mark Goorsky, University of California, Los Angeles, Past-Chair

Members at Large

Bob Biefeld, Sandia National Laboratory
Ralph Dawson, The University of New Mexico
Akio Sasaki, Kyoto University
Jerry Woodall, University of California, Davis
Ed Yu, The University of Texas at Austin

Members

Seth Bank, The University of Texas at Austin
Kris Bertness, National Institute of Standards and Technology
Len Brillson, The Ohio State University
John Conley, Oregon State University
Alan Doolittle, Georgia Institute of Technology
Randall Feenstra, Carnegie Mellon University
Michael Flatte, University of Iowa
Doug Hall, University of Notre Dame
Kei-May Lau, Hong Kong University of Science and Technology
Pat Lenahan, The Pennsylvania State University
Mike Manfra, Purdue University
Lisa Porter, Carnegie Mellon University
Joan Redwing, The Pennsylvania State University
Steve Ringel, The Ohio State University
Alberto Salleo, Stanford University
Mike Spencer, Cornell University
Alec Talin, Sandia National Laboratories
Huili (Grace) Xing, University of Notre Dame
Charles Tu, University of California, San Diego
Joshua Zide, University of Delaware


 

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The University of Notre Dame is consistently ranked among the nation’s top 25 institutions of higher learning by U.S. News & World Report, Princeton Review, Time and others. Founded in 1842, Notre Dame stands on 1,250 acres considered by many to be the most beautiful property owned by any university in the nation. From the collegiate Gothic architecture and park-like landscape, to exquisite outdoor sculptures and breathtaking views, Notre Dame’s campus is a visual splendor. Make some time in your schedule to see the sites. The Basilica of the Sacred Heart, the 14-story Hesburgh Library with its 132-feet-high mural depicting Christ the Teacher, and the university’s historic Main Building featuring the famed Golden Dome are among the most widely-known university landmarks in the world. The must-see local attractions, coupled with its highly regarded science and engineering programs, make this institution an ideal conference location.


 


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