Student Award Winners

Student awards are given annually by the Electronic Materials Committee for the best presentations at the Electronic Materials Conference. Student papers are judged on both scientific content and presentation at the conference. Awards are funded by the TMS Foundation and presented during the Plenary Session.

2016 58th Electronic Materials Conference

University of Delaware

  • Cory C. Bomberger, "Growth and Characterization of ErAs Nanoparticles Epitaxially Embedded within GaBiAs," advisor Joshua Zide, University of Delaware

  • Daniel Ironside, "Optimal Integration of Rare-Earth Monopnictide Nanostructures in III-V for High Optical Quality Applications," advisor Seth Bank, The University of Texas at Austin

  • Geoffrey E. Purdum, "Traversing the Polymorphic Landscape of Core-Chlorinated Naphthalene Diimides through Tuning Molecule-Molecule, Molecule-Substrate, and Molecule-Solvent Interactions," advisor Lin Loo, Princeton University

  • Lei Zhang, " Comparing Interface Defect Density vs Material Interface Charge for Gap Passivation of Inter-Digitated Back Contact Silicon Heterojunction Solar Cells," advisor Steven Hegedus, University of Delaware

2016 NIST Uncertainty Analysis Student Award Winner

University of Delaware

  • Jonathan Marini, "Mg dopant incorporation efficiency in pulsed MOCVD Growth of N-polar p-GaN," advisor Fatemeh (Shadi) Shahedipour-Sandvik, SUNY Polytechnic Institute

2015 57th Electronic Materials Conference

The Ohio State University  

  • Lan Yu, "Mid-Infrared Emisson from In(Ga)Sb Layers on InAs(Sb)," advisor Daniel Wasserman, University of Illinois at Urbana-Champaign
  • Zeng Zhang, "Deep Level States in p-Type GaN Grown by Ammonia-Based Molecular Beam Epitaxy and Metal Organic Chemical Vapor Deposition," advisor Steve Ringel, The Ohio State University

2015 NIST Uncertainty Analysis Student Award Winner

The Ohio State University  

  • Katherine Kragh-Buetow, "Characterization of Tungsten-Nickel Simultaneous Ohmic Contacts to p- and n-type 4H-SiC," advisor Suzanne Mohney, The Pennsylvania State University

2014 56th Electronic Materials Conference

University of California, Santa Barbara

  • Alan Liu, “Record Lifetimes of GaAs Based Lasers Epitaxially Grown on Silicon,” advisors John Bowers and Art Gossard, University of California, Santa Barbara
  • Scott Maddox, “Effects of Growth Rate, Substrate Temperature, and a Bi Surfactant on Doping Limits in InAs: Si Grown by Molecular Beam Epitaxy,” advisor Seth Bank, University of Texas at Austin
  • Kevin Schulte, “Key Factors Controlling EL2 Incorporation in n-GaAs Layers Grown by Hydride Vapor Phase Epitaxy,” advisor Thomas Kuech, University of Wisconsin-Madison

2014 NIST Uncertainty Analysis Student Award Winner

University of California, Santa Barbara

  • Rusen Yan, “Extraction of Thermal Conductivity in Suspended MoS2 by Raman Spectroscopy,” advisor Huili Grace Xing, University of Notre Dame

2013 55th Electronic Materials Conference

University of Notre Dame

  • Mark T. Durniak, “Cubic GaN Templates for LED Applications,” advisor Christian Wetzel, Rensselaer
  • Benjamin Leung, “Single Crystal GaN Growth on SiO2 by Evolutionary Selection,” advisor Jung Han, Yale University
  • James R. Riley, “Atom Probe Tomography of Polar, Nonpolar, and Semipolar InGaN Quantum Wells,” advisor Lincoln Lauhon, Northwestern University

2012 54th Electronic Materials Conference

Pennsylvania State University

  • Santino Carnevale, “Polarization-Induced pn-Diodes in Wide Band Gap Nanowires with Ultraviolet Electroluminescence,” advisor Roberto Myers, The Ohio State University
  • Hari Nair, “Thermal Annealing Induced Optical Quality Enhancement in GaSb-Based Dilute-Nitrides,” advisor Seth Bank, University of Texas at Austin
  • Christopher Yerino, “Tensile Strained III-V Quantum Dots on a (110) Surface: Morphology and Optical Properties,” advisor Minjoo Larry Lee, Yale University

2011 53rd Electronic Materials Conference

University of California, Santa Barbara

  • Yan Mui Kitty Yeung, "Tuning of Plasmonic Cavity Resonances Using Atomic Layer Deposition," advisor Evelyn Hu, Harvard University
  • Joshua Shapiro, "Structural Characterization of InGaAs Axial Inserts in GaAs Catalyst-Free Nanopillars Grown by Selective-Area MOCVD," advisor Diana Huffaker, University of California, Los Angeles

2010 52nd Electronic Materials Conference

University of Notre Dame

  • Ashish Baraskar, "In Situ Ohmic Contacts to p-InGaAs," advisors Mark Rodwell and Arthur Gossard, University of California, Santa Barbara
  • Anthony Rice, "Morphological Development of Homoepitaxial AlN Thin Films Grown by MOCVD," advisor Zlatko Sitar, North Carolina State University
  • James Riley, "Pulsed-Laser Atom Probe Tomographic Analysis of Ge-Ge/Co/Mn," advisor Lincoln Lauhon, Northwestern University

2009 51st Electronic Materials Conference

The Pennsylvania State University

  • Sebastien Vincent, "Study of the Formation, Evolution and Dissolution of Interfacial Bonding Defects Based on the Hydrogen Storage and Diffusion Mechanisms," advisor Hubert Renevier, Institut Polytechnique de Grenoble
  • John Simon, "Polarization Enhanced p-Type Conductivity in Graded N-Face AlGaN Slabs," advisor Debdeep Jena, University of Notre Dame
  • Charles Brooks, "Growth and Microstructure of Homoepitaxial Strontium Titanate Thin Films by Molecular-Beam Epitaxy," advisor Darrell Schlom, The Pennsylvania State University
  • Shriram Shivaraman, "Epitaxial Graphene Micro-Bridges," advisor Michael Spencer, Cornell University

2008 50th Electronic Materials Conference

University of California, Santa Barbara

  • J. Pedrazzani, "Virtual Elimination of Surface Leakage Currents in Unpassivated IR Photodetectors," advisor Gary Wicks, University of Rochester

2007 49th Electronic Materials Conference

University of Notre Dame

  • Michael Mori, "Lattice-Engineering for Monolithic Visible Yellow-Green Light Emitters," advisor Eugene A. Fitzgerald, Massachusetts Institute of Technology
  • Andrea Corrion, "Properties of GaN Buffer Layers on 6H-SiC Grown by Ammonia Molecular Beam Epitaxy for High Electron Mobility Transistors," advisor Jim Speck, University of California, Santa Barbara
  • Lee Mosbacker, "Correlation of Bulk Native Point Defects and Metal Reactivity on ZnO Using Depth Resolved Cathodoluminescence Spectroscopy," advisor Len Brillson, The Ohio State University

2006 48th Electronic Materials Conference

The Pennsylvania State University

  • Shadi Dayeh, "Growth Mechanism and Optimization of InAs Nanowires Synthesized by OMVPE, advisors Deli Wang and Edward T. Yu, University of California, San Diego
  • Nathan Yoder, "Investigating the Stability of Organic Molecules Bound to Semiconductor Surfaces with Low Temperature UHV-STM ," advisor Mark C. Hersam, Northwestern University
  • Xiaodong Chen, "Direct Write Composition Patterning of InGaN during Molecular Beam Epitaxy," advisor Lester Eastman, Cornell University

2005 47th Electronic Materials Conference

University of California, Santa Barbara

  • Eric Krauland, “Composition and Contextual Influence of Peptide Specificity for Inorganic Material Surfaces,” advisor Angela Belcher, Massachusetts Institute of Technology
  • Christiane Poblenz, “Effect of AlN Nucleation Layer Growth Conditions on Buffer Leakage in AlGaN/GaN High Electron Mobility Transistors Grown by Molecular Beam Epitaxy,” advisor Jim Speck, University of California, Santa Barbara
  • Nate Quitoriano, “Defect Behavior in Metamorphic Buffer Layers on Lattice Constants Near InP Grown by Metal Organic Chemical Vapor Deposition on GaAs,” advisor Gene Fitzgerald, Massachusetts Institute of Technology
  • Siddharth Rajan, “Structural and Electrical Characterization of N-Face GaN Grown on C-Face SiC by MBE,” advisor Umesh Mishra, University of California, Santa Barbara

2004 46th Electronic Materials Conference

University of Notre Dame

  • Jeff Gleason, “Nanometer-Scale Studies of Point Defect Distributions in GaMnAs Films,” advisor Rachel Goldman, University of Michigan
  • Tihomir Gugov, “Transmission electron microscopy structural characterization of GaInNAs and GaInNAsSb Quantum Wells Grown by Molecular Beam Epitaxy,” advisor Jim Harris, Stanford University
  • Jessica Hilton, “Reaction Kinetics, Thermodynamics, and Growth Characteristics of Ultrathin Mn Films on GaAs (001),” advisor Chris Palmstrom, University of Minnesota
  • Vincenzo Lordi, “Electroabsorption and Band Edge Optical Properties of GaInNAsSb Quantum Wells around 1550 nm,” advisor Jim Harris, Stanford University