Wide Bandgap Semiconductors
Group III-Nitrides—Growth, Processing, Characterization, Theory and Devices
- Srabanti Chowdhury, University of California, Davis
- Theeradetch Detchprohm, Georgia Institute of Technology
- Alan Doolittle, Georgia Institute of Technology
- Russell Dupuis, Georgia Institute of Technology
- Daniel Ewing, Department of Energy’s Kansas City National Security Campus
- Qhalid Fareed, Texas Instruments
- Daniel Feezell, The University of New Mexico
- Hiroshi Fujioka, The University of Tokyo
- Jennifer Hite, U.S. Naval Research Laboratory
- Andrew Koehler, U.S. Naval Research Laboratory
- Xiaohang Li, King Abdullah University of Science and Technology
- Michael Manfra, Purdue University
- Siddharth Rajan, The Ohio State University
- Shadi Shahedipour-Sandvik, State University of New York Polytechnic Institute
- Andrei Vescan, RWTH Aachen University
- Christian Wetzel, Rensselaer Polytechnic Institute
- Jonathon Wierer, Lehigh University
- Huili Grace Xing, Cornell University
Silicon Carbide—Growth, Processing, Characterization, Theory and Devices