PLEASE NOTE
- The Electronic Materials Conference (EMC 2012) is now soliciting Late News abstracts on late-breaking, cutting edge work in the electronic materials field. Select the “Late News Submissions” tab above for details.
The Electronic Materials Conference (EMC) is the premier annual forum on the preparation and characterization of electronic materials. EMC 2012, held June 20 – 22, at scenic Pennsylvania State University, will feature plenary sessions, parallel topical sessions, poster sessions and an industrial exhibition. Papers submitted by students will be eligible for “Best Student Paper Awards.” Mark your calendars today and plan to attend!
Important Dates:
- Discounted Lodging Deadline - May 17, 2012
- Preregistration Ends - June 5, 2012
Conference Organizer
Christian Wetzel
Rensselaer Polytechnic Institute
Program Organizer
Andrew Allerman
Sandia National Laboratories
Plenary Speaker
James S. Speck
University of California, Santa Barbara
Program
Plenary Speaker | Presentation Guidelines | Session Chair Procedures | EMC Author Index
Abstract Revisions | Visa Requests
View Program by Day:
The three day conference will feature oral and poster presentations covering:
Energy Conversion & Storage Materials
- Photovoltaics—Organic and Hybrid
- Next-Generation Solar Cell Materials and Devices
- Thermoelectrics and Thermionics
- Ionic Conductors for Solid-Oxide Fuel Cells and Batteries
- Highly Mismatched Dilute Alloys
Wide Bandgap Materials
- Group-III Nitrides—Growth, Processing, Characterization, Theory and Devices
- Silicon Carbide—Growth, Processing, Characterization, Theory and Devices
- Indium Nitride—Growth, Processing, Characterization, Theory and Devices
- Oxide Semiconductors—Growth, Doping, Defects, Nanostructures and Devices
- Point Defects, Doping and Extended Defects Enabling Technologies
Enabling Technologies
- Metamaterials
- Materials for THz, Plasmonics and Polaritons
- Flexible and Printed Thin-Film Electronics
- Organic Thin-Film and Crystalline Transistors—Devices, Materials and Processing
- Nano-Magnetic, Magnetic Memory and Spintronic Materials
- Contacts to Semiconductor Epilayers, Nanowires, Nanotubes and Organic Films
- Epitaxial Materials and Devices
- Narrow Bandgap Materials and Devices
- Embedded Nanoparticles and Rare-Earth Materials in III-V Semiconductors
- Dilute Nitride Semiconductors
- Nondestructive Testing and In-Situ Monitoring and Control
- Semiconductor Processing—Oxidation, Passivation, and Etching
- Materials Integration—Wafer Bonding and Engineered Substrates
- Oxide Thin-Film Integration—Alternative Dielectrics, Epitaxial Oxides, Multifunctional Oxides, Superlattices and Metal Gates
- Compound Semiconductor Growth on Si Substrates and Si-Based Heterojunctions
- Biomaterials and Interfaces
Nanoscale Science and Technology in Materials
- Graphene and Carbon Nanotubes
- Low-Dimensional Structures—Quantum Dots, Wires and Wells
- Nanotubes and Nanowires
- Nanoscale Characterization—Scanning Probes, Electron Microscopy and Other Techniques
- Molecular Electronics—Devices, Materials and Sensors
Plenary Speaker
 |
James S. Speck
Materials Department
University of California, Santa Barbara
Nonpolar and Semipolar GaN Materials and Devices:
The Journey So Far
|
Devices grown on c-plane GaN suffer from large internal electric fields due to discontinuities in spontaneous and piezoelectric polarization effects which cause charge separation between holes and electrons in quantum wells and limits the radiative recombination efficiency. Nonpolar GaN devices, such as in the m-plane (1100), are free from polarization related electric fields since the polar c-axis is parallel to any heterointerfaces. Semipolar GaN-based devices have reduced electric fields and in some cases, such as (2021), show a high propensity for Indium update for InGaN quantum wells.
In this talk, we present work on outstanding materials and device opportunities issues and opportunities including: morphological stability with special emphasis on the role of substrate orientation and growth conditions [1,2,3]; the development of pseudomorphoric InGaN and AlGaN semipolar buffer layers via dislocation strain relaxation [4,5,6,]; blue (1122) LDs in relaxed buffer layers [7]; green LEDs on relaxed buffer layers [8]; new detailed atom probe analysis of high performance GaN-based LEDs and laser diodes [9]. Additionally, we update progress on nonpolar electron devices and nonpolar and semipolar LEDs and LDs including the achievement of high performance true blue (λ >450 nm) and true green (λ >515 nm) lasers on m-plane and semipolar (namely, (2021)) GaN substrates [10,11]. Finally, we will present recent work on polarized light emission from m-plane LEDs [12] and demonstrate the first photonic crystal nonpolar LEDs [13].
[1] R.M. Farrell et al J. Cryst. Growth313, 1 (2010)
[2] R.M. Farrell et al Appl. Phys. Lett. 96, 231113 (2010)
[3] B. Bryant et al submitted for publication (2012)
[4] F. Wu et al J. Appl. Phys. 109, 033505 (2011)
[5] A.E. Romanov et al, J. Appl. Phys. 109, 103522(2011)
[6] E.C. Young et al. Appl. Phys. Express, 4, 061001 (2011)
[7] P.S. Hsu et al. Appl. Phys. Lett. 100, 021104 (2012)
[8] I. Koslow et al. submitted for publication (2012)
[9] T. Prosa et al. Appl. Phys. Lett. 98, 191903 (2011)
[10] K.M. Kelchner et al Appl. Phys. Express3, 092103(2010)
[11] Y.D. Lin et al. Appl. Phys. Express3, 082001 (2010)
[12] S.E. Brinkley et al. Appl. Phys. Lett. 98, 011110 (2011)
[13] E. Matioli et al. Appl. Phys. Lett. 98, 251112 (2011)
REVISIONS
Because major revisions may affect a symposium organizer’s decision to accept your abstract, please review it carefully before submission. In the unusual circumstance of having to revise your original abstract, the change must be submitted to: Marla Boots at boots@mrs.org. (Subject: Abstract Revision) and must include your 7-digit Control ID number. Please state exactly where the revisions are located (e.g., title, author, body, etc.).
VISA REQUESTS
If you require a VISA to travel to the US, please submit your abstract as early as possible. Send your travel visa requests to Paula Mahar (mahar@mrs.org).
Exhibit: Electronic Materials Conference 2012
EMC 2012 Exhibitors
Exhibit Hours:
Wednesday, June 20
3:00 pm – 3:30 pm
6:00 pm – 8:00 pm
Thursday, June 21
10:00 am – 10:30 am
Location
The Penn Stater Conference Center Hotel
Pennsylvania State University
215 Innovation Blvd.
State College, PA 16803, USA
1-800-233-7505 (Reference ID: EMCF12A)
Exhibit/Poster Session: Presidents Hall I and II
Exhibit/sponsor opportunities are still available by contacting Donna Watterson at watterson@mrs.org
Discounted Reservation Deadline: May 17, 2012
215 Innovation Boulevard
State College, PA 16803
1-800-233-7505 or 814-863-5050
RESERVE DISCOUNTED LODGING
Email: Reservations@psu.edu
Reservation Group Code: EMCF12A
- Single Occupancy - $119
- Double Occupancy - $129
Optional Student Housing is available here. Please note that student housing is located approximately 2 miles from the Conference Venue (Penn Stater Conference Center Hotel).
Pennsylvania State University (PSU) is consistently ranked one of the leading universities for materials science and engineering by the National Science Foundation, making it an ideal conference location. Still, there is so much to do at PSU, it can be a delightful vacation destination. The campus is nestled among the beautiful Pennsylvania countryside, and is rich with trails to explore.
Whether it’s hiking, dirt bike riding, cycling, ATVing or just leisurely walking, Penn State has something for everyone. Enjoy the family-friendly atmosphere with weekly arts festivals, fine boutiques and historic sites. Take a trip to the famous Penn State Creamery, the largest university creamery in the U.S., for one of their 100 flavors of ice cream.
From sightseeting to action-packed adventures, you won’t want to miss a moment. After all, it’s not called the “Happy Valley” for nothing!
Symposium Organizers
Energy Conversion & Storage Materials
Photovoltaics: Organic and Hybrid
Next Generation Solar Cell Materials and Devices
Thermoelectrics and Thermionics
Ionic Conductors for Solid Oxide Fuel Cells and Batteries
Highly Mismatched Dilute Alloys
Wide Bandgap Materials
Group III-Nitrides: Growth, Processing, Characterization, Theory and Devices
Silicon Carbide: Growth, Processing, Characterization, Theory and Devices
Indium Nitride: Growth, Processing, Characterization, Theory and Devices
Oxide Semiconductors: Growth, Doping, Defects, Nanostructures and Devices
Point Defects, Doping and Extended Defects
Enabling Technologies
Metamaterials
Materials for THz, Plasmonics and Polaritons
Flexible and Printed Thin Film Electronics
Organic Thin Film and Crystalline Transistors: Devices, Materials and Processing
Nano-Magnetic, Magnetic Memory and Spintronic Materials
Contacts to Semiconductor Epilayers, Nanowires, Nanotubes and Organic Films
Epitaxial Materials and Devices
- Kei-May Lau, Hong Kong University of Science and Technology
- Steve Ringel, Ohio State University
- Archie Holmes, University of Virginia
- Kurt Eyink, Air Force Research Laboratories
- Christine Wang, MIT Lincoln Laboratory
- Amy Liu, IQE, Inc.
- Seth Bank, University of Texas-Austin
- Charles Lutz, Kopin Corporation
- Michael Tischler, OCIS Technology
Narrow Bandgap Materials and Devices
Embedded Nanoparticles and Rare-Earth-Materials in III-V Semiconductors
Dilute Nitride Semiconductors
Nondestructive Testing and In Situ Monitoring and Control
Semiconductor Processing: Oxidation, Passivation, and Etching
Materials Integration: Wafer Bonding and Engineered Substrates
Oxide Thin Film Integration: Alternative Dielectrics, Epitaxial Oxides, Multifunctional Oxides, Superlattices, and Metal Gates
Compound Semiconductor Growth on Si Substrates and Si-Based Heterojunctions
Bio-Materials and Interfaces
Nanoscale Science and Technology in Materials
Graphene and Carbon Nanotubes
Low-Dimensional Structures: Quantum Dots, Wires and Wells
Nanotubes and Nanowires
Nanoscale Characterization: Scanning Probes, Electron Microscopy and Other Techniques
Molecular Electronics: Devices, Materials and Sensors
EMC Members and Organizers
Officers
Christian Wetzel, Rensselaer Polytechnic Institute Chair
Andrew Allerman, Sandia National Laboratory Vice Chair
Jamie Phillips, University of Michigan Secretary
David Janes, Purdue University Treasurer
Ex-Officio Members
Ted Harman, MIT Lincoln Laboratory Past Editor-JEM
Suzanne Mohney, Penn State University Editor-JEM
Zi-Kui Liu, Penn State University Chair EMPMD
Mark Goorsky, UCLA Past-Chair
Members at Large
Bob Biefeld, Sandia National Laboratory
Ed Yu, University of Texas at Austin
Ralph Dawson, University of New Mexico
Jim Merz, University of Notre Dame
Tim Sands, Purdue University
Akio Sasaki, Kyoto University
Jerry Woodall, Purdue University
Members
Seth Bank, University of Texas at Austin
Len Brillson, Ohio State University
Mike Capano, Purdue University
Alan Doolittle, Georgia Institute of Technology
Russ Dupuis, Georgia Institute of Technology
Randall Feenstra, Carnegie Mellon University
Michael Flatte, University of Iowa
Doug Hall, University of Notre Dame
Tom Jackson, Penn State University
Debdeep Jena, University of Notre Dame
Kei-May Lau, Hong Kong Univ. Sci. & Tech.
Pat Lenahan, Penn State University
Mike Manfra, Purdue University
Pete Moran, Michigan Technical University
Lisa Porter, Carnegie Mellon University
Joan Redwing, Penn State University
Steve Ringel, Ohio State University
Alberto Salleo, Stanford University
Mike Spencer, Cornell University
Robert Stahlbush Naval Research Laboratory
Alec Talin, NIST
Huili (Grace) Xing, University of Notre Dame
Charles Tu, UCSD
William Wong, University of Waterloo