Symposium O: Compound Semiconductors for Generating, Emitting, and Manipulating Energy

SYMPOSIUM O


O: Compound Semiconductors for Generating, Emitting, and Manipulating Energy
November 29 - December 2, 2011
Chairs
Tingkai Li     Hunan Gongchuang Photovoltaic Science & Technology Co., Ltd.
Michael Mastro     U.S. Naval Research Laboratory
Armin Dadgar     Otto-von-Guericke-Universitaet Magdeburg
Hongxing Jiang     Texas Tech University
Jihyun Kim     Korea University



* Invited paper

 

SESSION O1: III-Nitride LEDs
Chair: Tingkai Li
Tuesday Morning, November 29, 2011
Room 304 (Hynes)


8:00 AM O1.1 

Absence of Electron Accumulation at the InN(11-20) Cleavage Surfaces.Holger Eisele1, Sarah Schaafhausen2, Andrea Lenz1, Aizhan Sabitova2, Lena Ivanova1, Mario Daehne1, Y. L. Hong3, Shangjr Gwo3, Philipp Ebert2; 1Institut für Festkörperphysik, Technische Universität Berlin, Berlin, Germany; 2Peter Grünberg Institut, Forschungszentrum Jülich, Jülich, Germany; 3Department of Physics, National Tsing Hua University, Hsinchu, Taiwan. 

 

8:15 AM O1.2
Visible-Color-Tunable Light-Emitting Diodes.Young Joon Hong2,3,1, Chul-Ho Lee2,3, Gyu-Chul Yi3, Aram Yoon4, Miyoung Kim4, Han-Kyu Seong5, Hun Jae Chung5, Cheolsoo Sone5 and Yong Jo Park5; 1Research Center for Integrated Quantum Electronics, Hokkaido University, Sapporo, Japan; 2Mateirals Science and Engineering, Pohang University of Science and Technology, Pohang, Korea, Republic of; 3Physics and Astronomy, Seoul National University, Seoul, Korea, Republic of; 4Materials Science and Engineering, Seoul National University, Seoul, Korea, Republic of; 5Samsung LED Co. Ltd., Suwon, Korea, Republic of.

8:30 AM O1.3
First Demonstration of InGaN/GaN Based Blue Light Emitting Diodes Grown on 8-Inch Diameter Si (111) Substrates.Jun-Youn Kim, Hyun-Gi Hong, Yeonhee Kim, Suhee Chae, Youngjo Tak, Jae Kyun Kim, Jae Won Lee, Hyoji Choi, Junghun Park, Bokki Min, Bokki Min, Youngsoo Park and U-In Chung; Samsung electronic company, Yongin, Korea, Republic of.

8:45 AM O1.4
High-Performance Semipolar (20-2-1) InGaN/GaN Light-Emitting Diodes.Yuji Zhao1, Shinichi Tanaka2, Chih-Chien Pan2, Chia-Yen Huang2, Kenji Fujito3, Daniel Feezell2, James S. Speck2, Steven P. DenBaars1,2 and Shuji Nakamura1,2; 1ECE, University of California, Santa Barbara, Santa Barbara, California; 2Materials, University of California, Santa Barbara, Santa Barbara, California; 3Optoelectronics Laboratory, Mitsubishi Chemical Corporation, Ushiku, Ibaraki, Japan.

9:00 AM O1.5
Incorporation of Colloidal Metallic Nanocrystals into InGaN/GaN MQWs: Bringing Together Top-down and Bottom-up Approaches in Order to Enhance Light Emission.Sergio Pereira1, M. A. Martins1, T. Trindade1, A. Llopis2, Arup Neogi2, A. A. Krokhin2 and Ian Watson3; 1Physics and Chemistry/CICECO, University of Aveiro, Aveiro, Portugal; 2Physics, University of North Texas, Denton, Texas; 3Institute of Photonics, University of Strathclyde, Glasgow, United Kingdom.

9:15 AM *O1.6
Reducing the Cost of Ownership: MOCVD Advances for GaN LED’s and AsP CPV Technologies.Eric A. Armour, Turbodisc Division, Veeco Instruments, Somerset, New Jersey.

9:45 AM BREAK

10:15 AM O1.7
A Defect-Based Mechanism for Efficiency Droop in Nitride Light Emitting Diodes.N. A. Modine, A. A. Armstrong, M. H. Crawford and W. W. Chow; Sandia National Laboratories, Albuquerque, New Mexico.

10:30 AM O1.8
Optimization of the Optical and Electrical Properties of GaN Vertical Light Emitting Diode with Current Block Layer. Na Lu1, Zhiqiang Liu3,2, Enqing Guo2, Liancheng Wang2, Andrew Melton3 and Ian Ferguson3; 1Engineering Technology, University of North Carolina at Charlotte, Charlotte, North Carolina; 2Electrical and Computing Engineering, University of North Carolina at Charlotte, Charlotte, North Carolina; 3Chinese Academy of Science, Beijing, China.

10:45 AM O1.9
Fabrication of Large-Area Graphene-Based Transparent Conductive Electrode for UV LEDs.Byung-Jae Kim, Chongmin Lee, Younghun Jung and Jihyun Kim; Deprtment of Chemical and Biological Engineering, Korea University, Seoul, Korea, Republic of.

11:00 AM O1.10
On the Reverse Leakage Current in GaInN Light-Emitting Diodes.Qifeng Shan1, David Meyaard2, Qi Dai1, Jaehee Cho2, E. Fred Schubert1,2, Joong Kon Son3 and Cheolsoo Sone3; 1Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Troy, New York; 2Electrical, Computer, and System Engineering, Rensselaer Polytechnic Institute, Troy, New York; 3R&D Institute, Samsung LED, Suwon, Korea, Republic of.

11:15 AM O1.11
Growth and Optimization of InGaN/InGaN Multiple Quantum Wells by Metal Organic Vapour Phase Epitaxy.Hu Liang1, Kai Cheng1, Liyang Zhang2,1, Maarten Leys1, Bram Sijmus1, Caroline L’abbe1, Johan Dekoster1 and Gustaaf Borghs1,2; 1IMEC, Leuven, Belgium; 2Physics and Astronomy, K.U. Leuven, Leuven, Belgium.

11:30 AM O1.12
Characteristics of N-Polar III-Nitride Light Emitting Diodes.Fatih Akyol1, Digbijoy N. Nath1, Limei Yang2, Pil Sung Park1, S. Krishnamoorthy1, Michael Mills2, Siddharth Rajan1;

1Electrical and Computer Engineering, Ohio State Univeristy, Columbus, OH, United States; 2Materials Science Engineering, Ohio State University, Columbus, OH, United States.

 

11:45 AM O1.13
White Emission from InGaN MQWs on c-Planes and Nano Pyramids Hybrid Structure and Color Temperture Control of Hybrid White LED.Joosung Kim, Moon-Seung Yang, Taek Kim, Youngsoo Park and U-in Chung; Photo-Electronic Device Group, Samsung Advanced Institute of Technology, Yongin-si, Gyeonggi-do, Korea, Republic of.

 

SESSION O2: Optoelectronics
Chairs: Eric Armour and Jihyun Kim
Tuesday Afternoon, November 29, 2011
Room 304 (Hynes)


1:30 PM O2.1
The Research and Development for Collecting, Emitting, and Manipulating EnergyTingkai Li, Hunan Gongchuang Photovoltaic Science & Technology Co., Ltd., Hengyang, China.

1:45 PM *O2.2
Integrated Optoelectronic Devices on Silicon.John E. Bowers and Di Liang; Electrical and Computer Engineering, University of California - Santa Barbara, Santa Barbara, California.

2:15 PM O2.3
Study on the Self-Organization Mechanism of InGaN Quantum Dot in GaN Nanowires.Kai Cui1, Martin Couillard2, Gianluigi Botton2 and Zetian Mi1; 1Electrical and Computer Engineering, McGill University, Montreal, Quebec, Canada; 2The Canadian Centre for Electron Microscopy, McMaster University, Hamilton, Ontario, Canada.

2:30 PM O2.4
Controlled Tuning of Whispering Gallery Modes of GaN/InGaN Microdisk Cavities.Igor Aharonovich1, Nan Niu1, Fabian Rol1, Alexander Woolf1, Kasey J. Russell1, Haitham A. El-Ella2, Menno J. Kappers2, Rachel A. Oliver2 and Evelyn L. Hu1; 1School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts; 2Department of Materials Science and Metallurgy, University of Cambridge, Cambridge, United Kingdom.

2:45PM BREAK

3:15 PM O2.5
Zinc Oxide Nanowires on p-GaN for Light Emission.Caterina Soldano1, Camilla Baratto1, Elisabetta Comini1, Matteo Ferroni1, Guido Faglia1, Giorgio Sberveglieri1, Andre Somers2 and Andreas Weimar2; 1Dipartimento di Chimica e Fisica, Univeristà di Brescia, Brescia, Italy; 2OSRAM Opto Semiconductors GmbH, Regensburg, Germany.

3:30 PM O2.6
High-Performance GaN-Based Light-Emitting Diodes with ZnO Nanorods.Seon HO Jang, Sei-Min Kim, Jong Sun Lee, Hea-Ryong Lim and Ja Soon Jang; Electronic Eng.Nanophotonics Lab., Yeungnam Univ. & LED-IT FusionTechnology Research Center(LIFTRC), Gyongsan, Korea, Republic of.

3:45 PM O2.7
ZnO/ZnSe Type II Core-Shell Nanowire Array Solar Cell. Z. Wu1, J. Zheng1, X. Lin1, H. Zhan1, S. Li1, J. Kang1, Yong Zhang2,3, J. Bleuse3, R. Andre3 and H. Mariette3; 1Physics, Xiamen University, Xiamen, China; 2Electrical and Computer Engineering, UNC-Charlotte, Charlotte, North Carolina; 3NPSC, CEA-CNRS-UJF, Grenoble, France.

4:00 PM O2.8
High Reliable AlCu-Based Ohmic Reflector for GaN-Based Light-Emitting Diodes.Sei-Min Kim1,2, Seon-Ho Jang1, Sang-Mook Kim2, Jong-Hyeob Baek2 and Ja-Soon Jang1; 1Yeoungnam University and LED-IT Fusion Technology Research Center, Kyeongsan-Si, Korea, Republic of; 2Korea Photonics Technology Institute, Gwangju, Korea, Republic of.

4:15 PM O2.9
Fabrication of QDs-Polymer Films for Light Emitting Device as Highly Stable QDs by Metal Oxide Treatment on the Surface.Yun Ku Jung1, Yuwon Lee2, Gwang-Hei Choi2 and Jin-Kyu Lee1; 1Chemistry, Seoul National University, Seoul, Korea, Republic of; 2LG Components R&D Center, LG Innotek, Ansan, Korea, Republic of.

4:30 PM O2.10
Photonic Crystal Modulated IV-VI Semiconductor Mid-IR Light Emitter on Silicon.Binbin Weng, Lin Li, Jijun Qiu and Zhisheng Shi; Electrical and Computer Engineering, University of Oklahoma, Norman, Oklahoma.

 

SESSION O3: Solar Harvesting
Chairs: Louis Grenet and Matt Sheldon
Wednesday Morning, November 30, 2011
Room 304 (Hynes)


8:00 AM *O3.1 

Advances in Heterointegration of III-V/Si Solar Cells.Steven A. Ringel1, T. J. Grassman1, J. Grandal1, A. Carlin1, C. Ratcliff1, L. M. Yang2 and M. Mills2; 1Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio; 2Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio.

8:30 AM O3.2
Effects of Marcasite and Oxygen Substitution on the Photovoltaic Performance of Pyrite FeS2 from First Principles.Ruoshi Sun1, Maria K. Y. Chan1,2, ShinYoung Kang1 and Gerbrand Ceder1; 1Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts; 2Center for Naoscale Materials, Argonne National Laboratory, Argonne, Illinois.

8:45 AM O3.3
Defects in Cu(In,Ga)Se2 Chalcopyrite Semiconductors: A Comparative Study of Material Properties, Defect States and Photovoltaic Performance.Qing Cao1, Oki Gunawan1, Matthew Copel1, Kathleen B. Reuter1, Jay Chey1, Vaughn Deline2 and David B. Mitzi1; 1IBM T.J. Watson Research Center, Yorktown Heights, New York; 2IBM Almaden Resesarch Center, San Jose, California.

9:00 AM *O3.4
Nanostructured III-V and Chalcogenide Solar Cells.Yi Cui, Stanford University, Stanford, California.

9:30 AM O3.5
Transparent Graphene Electrode in CdTe Solar Cells.Younghun Jung1, Seunju Chun2, Donghwan Kim2 and Jihyun Kim1; 1Department of Chemical and Biological Engineering, Korea University, Seoul, Korea, Republic of; 2Department of Materials Science and Engineering, Korea University, Seoul, Korea, Republic of.

9:45 AM O3.6
CZTS/Se for Thin Films Solar Cells.Louis Grenet, Sergio Bernardi, Sebastien Noel and Simon Perraud; CEA, Grenoble, France.

10:00 AM BREAK

10:30 AM O3.7
Bulk Crystal Growth of Chalchopyrite Semiconductors of the Zn-Cd-Sn-P System Based on the Phase Diagram.Takahiro Higashino, Noriyuki Tanaka, Yoshitaro Nose, Kazuaki Toyoura and Tetsuya Uda; Materials Science and Engineering, Kyoto University, Kyoto, Japan.

10:45 AM O3.8
Tailoring of CdS Nano Films Through CBD-Isochronal Synthesis For PV Applications.Amanullah Fatehmulla1, Abdullah M. Aldhafiri1, Hamad Albrithen1,2, Omar Al-Dossari1, Adil M. Hassib1, Mohammad L. Hussein1,2, Jalinder D. Ambekar3, Dinesh P. Amalnerkar3 and Mohamed Aslam1; 1Physics and Astronomy, King Saud University, Riyadh-11451, Saudi Arabia; 2King Abdullah Institute for Nanotechnology, King Saud University, Riyadh -11451, Saudi Arabia; 3Centre for Materials for Electronics Technology(C-MET), Pune- 411008, India.

11:00 AM O3.9
Strain Engineering of III-V Compound Semiconductors for an Optimized Triple Junction Solar Cell.Marina S. Leite, Emily Warmann, Gregory Kimball and Harry A. Atwater; CALTECH, Pasadena, California.

11:15 AM O3.10
PN Junction Formation at the Interface of CdS/CuInxGa(1-x)Se2-based Thin Film Solar Cell. Soon Mi Park1, Yong Duck Chung2, Dea-Hyung Cho2, Jeha Kim2, Kyung Joong Kim1 and Jeong Won Kim1; 1Korea Research Insititute of Standards and Science, Daejon, Korea, Republic of; 2Electronics and Telecommunications Research Institute, Daejon, Korea, Republic of.

11:30 AM O3.11
Towards `Self-Healing' Solar Cells: Dynamic GaAs Passivation Using Encapsulated Sulfur-Functionalized Surfactants.Matthew Sheldon, Carissa Eisler and Harry Atwater; Applied Physics, California Institute of Technology, Pasadena, California.

 

SESSION O4: Transistor Technology
Chairs: Wayne Johnson and Fan Ren
Wednesday Afternoon, November 30, 2011
Room 304 (Hynes)


1:30 PM *O4.1
Advanced Compound Semiconductor Materials Development.Wayne Johnson, Kopin Corporation, Taunton, Massachusetts.

2:00 PM *O4.2
The Effects of Device Dimension, Substrate Temperature, and Gate Metallization on the Reliability of AlGaN/GaN High Electron Mobility Transistors.Fan Ren1, Stephen J. Pearton1, Lu Liu1, Tsung Sheng Kang1, Chein Fong Lo1, Erica A. Douglas1, Lin Zhou2, David J. Smith2 and Soohwan Jang3; 1Unniversity of Florida, Gainesville, Florida; 2Arizona State University, Tempe, Arizona; 3Dankook University, Yongin, Korea, Democratic People's Republic of.

2:30 PM O4.3
Emission and Detection of Surface Acoustic Waves by AlGaN/GaN HEMTs.Lei Shao1, Meng Zhang2, Animesh Banerjee2, Pallab K. Bhattacharya2 and Kevin P. Pipe1,2; 1Mechanical Engineering, University of Michigan, Ann Arbor, Michigan; 2Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan.

2:45 PM BREAK

3:00 PM O4.4
Structural, Luminescence and Electrical Characterisation of InAlN/AlN/GaN Heterostructures.Naresh K. Gunasekar1, Carol Trager-Cowan1, Arantxa Vilalta-Clemente2, M. Morales2, Pierre Ruterana2, Hannes Behmenburg3, M. Heuken3, Francesco Ivaldi4, A. Letrouit4, S. Kret4, S. Pandey5, A. Minj5 and Anna Cavallini5; 1Physics, Universtiy of Strathclyde, Glasgow, United Kingdom; 2CIMAP UMR, Caen, France; 3AIXTRON, Aachen, Germany; 4Physics, Polish Academy of Sciences, Warsaw, Poland; 5Physics, Università di Bologna, Bologna, Italy.

3:15 PM O4.5
Copper Oxide Edge-Termination for GaN Schottky Barrier Diodes with Low Turn-on Voltage.Yuichi Minoura, Naoya Okamoto, Masahito Kanamura, Tadahiro Imada, Toshihiro Ohki, Kenji Imanishi, Keiji Watanabe, Kazukiyo Joshin and Toshihide Kikkawa; Fujitsu Laboratories Ltd., Atsugi, Japan.

3:30 PM O4.6
Ferromagnetic GaN:Gd Thin Films for Spintronic Devices.Andrew G. Melton1, ZhiQiang Liu2, Na Lu3 and Ian T. Ferguson1; 1Electrical and Computer Engineering, UNC Charlotte, Charlotte, North Carolina; 2Semiconductor Lighting Technology, Chinese Academy of Sciences, Beijing, China; 3Engineering Technology, UNC Charlotte, Charlotte, North Carolina.

3:45 PM O4.7
Enhanced Tunneling in GaN p-n Junctions Using Ultra-Thin GdN Layers.Sriram Krishnamoorthy1, Jing Yang2, Pil Sung Park1, Roberto C. Myers2,1 and Siddharth Rajan1,2; 1Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio; 2Department of Material Science and Engineering, The Ohio State University, Columbus, Ohio.

4:00 PM O4.8
GaN-Based Neutron Scintillators.Andrew G. Melton1, Eric Burgett2, Nolan Hertel3 and Ian T. Ferguson1; 1Electrical and Computer Engineering, UNC Charlotte, Charlotte, North Carolina; 2Nuclear Engineering, Idaho State University, Pocatello, Idaho; 3Nuclear Engineering, Georgia Institute of Technology, Atlanta, Georgia.

4:15 PM O4.9
Chemical Etch Characteristics of N-Face and Ga-Face GaN by Hot H3PO4 and KOH Solution.Younghun Jung1, K. H. Baik2, S. J. Pearton3, R. Fan4 and J. Kim1; 1Department of Chemical and Biological Engineering, Korea University, Seoul, Korea, Republic of; 2Optoelectronics Laboratory, Korea Electronics Technology Institute, Seongnam, Korea, Republic of; 3Department of Materials Science and Engineering, University of Florida, Gainesvile, Florida; 4Department of Chemical Engineering, University of Florida, Gainesvile, Florida.

 

4:30 PM *O4.10Effect of Electron Blocking Layer and p-Type Layer on Droop in InGaN/GaN Multiple-Quantum-Well Visible Light-Emitting Diodes.Russell D. Dupuis1, Jeomoh Kim1, Suk Choi1, Mi-Hee Ji1, Jae-Hyun Ryou1, Kewei Sun2, Alec M. Fischer2, Fernando A. Ponce2; 1Center for Compound Semiconductors and School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, United States; 2Department of Physics, Arizona State University, Tempe, AZ, United States.  


 

SESSION O5: Photonics and Optics
Chairs: Alois Krost and Joan Redwing
Thursday Morning, December 1, 2011
Room 304 (Hynes)


8:15 AM O5.1
High Quality Metamorphic Materials on GaAs Using Multi-Component InGaAs/InGaP Grading for Multispectral Detector Applications.Krishna Swaminathan1, Andrew M. Carlin1, Tyler J. Grassman1, Limei M. Yang2, Michael Mills2 and Steven A. Ringel1,2; 1Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio; 2Materials science and Engineering, The Ohio State University, Columbus, Ohio.

8:30 AM O5.2
Nano-Scale Characterization of an AlInN/AlGaN Distributed Bragg Reflector Using Scanning Transmission Electron Microscopy Cathodoluminescence.Gordon Schmidt, Peter Veit, Frank Bertram, Juergen Christen, Christoph Berger, Armin Dadgar and Alois Krost; Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg, Magdeburg, Germany.

8:45 AM *O5.3
Nonlinear Optical Techniques for Characterization of Wide Band Gap Semiconductor Electronic Properties: III-Nitrides, SiC, and Diamonds.Kestutis Jarasiunas1,2, Ramunas Aleksiejunas1, Tadas Malinauskas1, Saulius Nargelas1 and Patrik Scajev1; 1Institute of Applied Research, Vilnius university, Vilnius, Lithuania; 2Virginia Commonwealth University, Richmond, Virginia.

9:15 AM O5.4
Photonic Molecules Formed of (Ga0.51In0.49)P Coupled Microdisks.Tsung-li Liu1, Marcus Witzany2, Robert Rossbach2, Michael Jetter2, Peter Michler2 and Evelyn L. Hu1; 1School of Engineering and Applied Science, Harvard, Cambridge, Massachusetts; 2Institut für Halbleiteroptik und Funktionelle Grenzflächen, University Stuttgart, Stuttgart, Germany.

9:30 AM O5.5
Couplings in GaAs/GaAlAs/Metal Photonic Waveguides with Metal Variations.Meng-Mu Shih, Electrical and Computer Engineering, University of Florida, Gainesville, Florida.

9:45 AM BREAK

10:00 AM O5.6
Cathodoluminescence Characterization of Si-Doped Orientation Patterned GaAs Crystals. Vanesa Hortelano1, Oscar Martinez1, Juan Jimenez1, Michael Snure2, Candace Lynch3 and David Bliss2; 1GdS optronlab, Universidad de Valladolid, Valladolid, Spain; 2Sensors Directorate, Air Force Research Laboratory, Hanscom, Massachusetts; 3PPIG, Northvale, New Jersey.

10:15 AM O5.7
Observation of High Terahertz Transmittance from Mg-Doped InN by Terahertz Time-Domain Spectroscopy.Hong-Mao Li1, Chih-Wui Chia1, Hyeyoung Ahn1, Yu-Liang Hong2 and Shangjr Gwo2; 1Department of Photonics, National Chiao Tung University, Hsinchu, Taiwan; 2Department of Physics, National Tsing-Hua University, Hsinchu, Taiwan.

10:30 AM O5.8
Imaging and Identifying Defects in Nitride Semiconductor Thin Films Using a Scanning Electron Microscope. Naresh Kumar1, Jochen Bruckbauer1, Paul Edwards1, Ben Hourahine1, Christof Mauder2, Holger Kalisch2, Andrei Vescan2, Christoph Giesen3, Michael Heuken2,3, Philip Shields4, Austin Day5, Gordon England6 and Carol Trager-Cowan1; 1SUPA, Department of Physics, University of Strathclyde, Glasgow, United Kingdom; 2GaN Device Technology, RWTH Aachen University, Aachen, Germany; 3AIXTRON SE, Herzogenrath, Germany; 4Department of Electronic and Electrical Engineering, University of Bath, Bath, United Kingdom; 5Aunt Daisy Scientific Ltd, Lydney, United Kingdom; 6K.E. Developments Ltd, Cambridge, United Kingdom.

10:45 AM O5.9
Growth and Characterization of Ga(AsP)-Metamorphic Buffer Structures for Tandem Solar-Cells on Si.Jens Ohlmann, Andreas Beyer, Regina Schmitt, Wolfgang Stolz and Kerstin Volz; Materials Science Center & Faculty of Physics, Philipps University, Marburg, Hessen, Germany.

11:00 AM O5.10
Optical Characterization of a Hybrid InGaN/GaN Microcavity with Epitaxial AlInN/GaN Bottom DBR.Alexander Franke, Barbara Bastek, Stefan Sterling, Thomas Hempel, Peter Veit, Juergen Christen, Pascal Moser, Christoph Berger, Juergen Blaesing, Armin Dadgar and Alois Krost; Institute of Experimental Physics, University Magdeburg, Magdeburg, Germany.

11:15 AM O5.11
AlN/GaN Distributed Bragg Reflectors Grown via Metal Organic Vapor Phase Epitaxy Using GaN Insertion Layers.L. E. Rodak, J. Peacock, J. Justice and D. Korakakis; Lane Department of Computer Science and Electrical Engineering, West Virginia University, Morgantown, West Virginia.

11:30 AM O5.12
Green InGaN Nano-Pyramidal Structure on nGaN/Si Templates.Moon-Seung Yang, Joosung Kim, Sangmoon Lee, Taek Kim, Youngsoo Park and Uin Chung; M&D lab., SAIT, Yongin, Korea, Republic of.

11:45 AM O5.13
MOVPE Growth and Characterization of GaN-Microcavities with an AlInN/AlGaN Bottom Distributed Bragg Reflector.Christoph Berger, Alexander Franke, Gordon Schmidt, Armin Dadgar, Juergen Blaesing, Thomas Hempel, Juergen Christen and Alois Krost; Institute of Experimental Physics, Otto-von-Guericke University Magdeburg, Magdeburg, Sachsen-Anhalt, Germany.

 

SESSION O6: Semiconductor Analysis and Synthesis
Chairs: Kestutis Jarasiunas and Hongxing Jiang
Thursday Afternoon, December 1, 2011
Room 304 (Hynes)


1:30 PM O6.1
Eliminating Stacking Faults in Semi-Polar GaN Grown on Planar Si(112) and Si(113) Substrates by AlN Interlayers.Roghaiyeh Ravash, Gordon Schmidt, Peter Veit, Mathias Mueller, Armin Dadgar, Anja Dempewolf, Thomas Hempel, Juergen Blaesing, Frank Bertram, Juergen Christen and Alois Krost; Institut for experimental physics, Magdeburg, Germany.

1:45 PM *O6.2
Effects of Si Doping and Threading Dislocation Density on Stress Evolution in AlGaN Films.Joan Redwing1,2, Ian Manning1, Jeremy Acord3, Xiaojun Weng2 and David Snyder3; 1Materials Science and Engineering, Penn State University, University Park, Pennsylvania; 2Materials Research Institute, Penn State University, University Park, Pennsylvania; 3Electro-Optics Center, Penn State University, University Park, Pennsylvania.

2:15 PM O6.3
Depth Resolved Homogeneity and Quality Studies of Large Scale GaN LED Templates Grown on Si (111).Stephanie Fritze1, J. Blaesing1, P. Drechsel2, P. Stauss2, A. Dadgar1 and A. Krost1; 1Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg, Magdeburg, Saxony-Anhalt, Germany; 2OSRAM Opto Semiconductors, Regensburg, Bavaria, Germany.

2:30 PM BREAK

2:45 PM *O6.4
Stress Evolution in Growing Group-III-Nitride Layers on Si and Sapphire.Alois Krost, Institut fur Experimentelle Physik, Otto-von-Guericke-Universitat Magdeburg, Magdeburg, Germany.

3:15 PM O6.5
New Insights into the Nature of the Mg Acceptors in Nitride Semiconductors.John Lyons, Anderson Janotti and Chris G. Van de Walle; Materials, University of California, Santa Barbara, Santa Barbara, California.

3:30 PM O6.6
Fermi Level Effect on Strain in N Type GaN.Jinqiao Xie1, Seiji Mita1, Lindsay Hussey2, Anthony Rice2, James Tweedie2, Ramón Collazo2 and Zlatko Sitar2; 1Hexatech Inc, Morrisville, North Carolina; 2Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina.

3:45 PM O6.7
Surface Morphology of Homoepitaxial AlN Thin Films Deposited by MOCVD on Vicinal (0001)-Oriented AlN Substrates.Anthony Rice1, Ramon Collazo1, Seiji Mita2, James Tweedie1, Jinqiao Xie2, Rafael Dalmau2 and Zlatko Sitar1; 1North Carolina State University, Raliegh, North Carolina; 2HexaTech, Inc, Morrisville, North Carolina.

4:00 PM O6.8
Impact of Si Substrate Engineering on AlN-Si Interface: Correlation with Stress Evolution of Overgrown GaN. Mihir Tungare1, Jeffrey M. Leathersich1, Xiaojun Weng2, Jarod Gagnon2, Puneet Suvarna1, Vimal K. Kamineni1, Joan Redwing2, Richard J. Matyi1, Alain C. Diebold1 and Fatemeh (Shadi) Shahedipour-Sandvik1; 1College of Nanoscale Science and Engineering, University at Albany, SUNY, Albany, New York; 2Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania.

4:15 PM O6.9
Mophological Characterization of Serrated GaN Nanowires.Zheng Ma1, Mohamed Abd Elmoula1, Eugen Panaitescu1, Moneesh Upmanyu2 and Latika Menon1; 1Physics, Northeastern University, Boston, Massachusetts; 2Mechanical Engineering, Northeastern University, Boston, Massachusetts.

4:30 PM O6.10
Thermal Characterization Methods for AlxGa1-xN Based Ultraviolet Light Emitting Diodes.Samuel Graham1, Bobby G. Watkins1, Vinod Adivarahan2, Asif Khan3 and Samuel Graham1; 1George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia; 2Nitek, Inc., Irmo, South Carolina; 3Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina.

4:45 PM O6.11
Characterization of InGaN and InAlN Epilayers by Microdiffraction X-Ray Reciprocal Space Mapping.Vyacheslav Kachkanov1, Kevin O'Donnell2, Igor Dolbnya1, Sergio Pereira4, Katarina Lorenz3, Robert Martin2, Paul Edwards2, Kawal Sawhney1 and Ian Watson5; 1Diamond Light Source Ltd, Didcot, United Kingdom; 2Department of Physics, SUPA, University of Strathclyde, Glasgow, Scotland, United Kingdom; 3Instituto Tecnologico e Nuclear, Sacavem, Portugal; 4CICECO, Departamento de Fisica and I3N, Universidade de Aveiro, Aveiro, Portugal; 5Institute of Photonics, SUPA, University of Strathclyde, Glasgow, Scotland, United Kingdom.

 

SESSION O7: Poster Session: Compound Semiconductors for Energy Applications
Chairs: Hongxing Jiang and Tingkai Li
Thursday Evening, December 1, 2011
8:00 PM
Exhibition Hall D (Hynes)


O7.1
Carrier Distributions in InGaN/GaN Active Layers Investigated by Photo-Assisted Capacitance-Voltage Measurement with Temperatures, Frequencies and Excitation Powers.Jung-Hoon Song1, Tae-Soo Kim1, Byung-Jun Ahn1, Yanqun Dong1, Ki-Nam Park1, Moon-Taek Hong1, Young-Boo Moon2, Hwan-Kuk Yuh2, Duk-Gyu Bae2, Sung-Chul Choi2, Jae-Ho Song2 and Soon-Ku Hong3; 1Physics, Kongju National University, Kongju, Chungnam, Korea, Republic of; 2THELEDS Co., Ltd, Yongin, Gyeonggi, Korea, Republic of; 3Advanced Materials Engineering, Chungnam National University, Daejeon, Daejeon, Korea, Republic of.

O7.2
Plasma Gas Condensation Assisted Synthesis and Optical Properties of ZnO:Ge Nanocomposites.Abdullah Ceylan and Sadan Ozcan; Physics Engineering, Hacettepe University, Beytepe, Ankara, Turkey.

O7.3
Investigation of III-V Layers Grown on the Ge-on-Si Substrate for the Solar Cell Operation.Changjae Yang1,2, Keun Wook Shin1, Sangsoo Lee1, Se Woung Oh1, Chang-zoo Kim2, Won-Kyu Park2 and Euijoon Yoon1,3,4; 1Materials Science and Engineering, Seoul National University, Seuol, Korea, Republic of; 2Technology Development, Korea Advanced Nano Fab Center, Suwon, Gyeonggi, Korea, Republic of; 3WCU Hybid Materials Program, Materials Science and Engineering, Seoul National University, Seoul, Korea, Republic of; 4Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Suwon, Gyeonggi, Korea, Republic of.

O7.4
Selective MOCVD-Growth and Properties of Highly Dense Gallium Nitride Nanodots Employing Diblock Copolymer Lithography.Bin Liu1, Ye-cao Li1, Rong Zhang1, Shu-lin Gu1 and Thomas F. Kuech2; 1School of Electronic Science and Engineering, Nanjing University, Nanjing, Jiangsu, China; 2Department of Chemical and Biological Engineering, University of Wisconsin, Madison, Wisconsin.

O7.5
Structural Aspects and Thermoelectric Properties of the P-Type Doped Stannite Compound Cu2ZnGeSe4.Wolfgang Zeier1,2, Aaron LaLonde2, Michael Schwall1, Christophe Heinrich1, Martin Panthoefer1, G. Jeffrey Snyder2 and Wolfgang Tremel1; 1Institute of Inorganic Chemistry and Analytical Chemistry, Johannes Gutenberg University Mainz, Mainz, Germany; 2Material Science, California Institute of Technology, Pasadena, California.

O7.6
Domain Matching Epitaxial Growth of Mg-Containing Ag Film on p-Type GaN.Yang Hee Song, Hak Ki Yu, Jun Ho Son, Buem Joon Kim and Jong-Lam Lee; POSTECH, Pohang, Korea, Republic of.

O7.7 

Transferred to T5.39 


O7.8
Structural Properties of Self-Assembled InGaN Quantum Dot Superlattices in Semipolar (11-22) GaN. G. P. Dimitrakopulos1, A. Lotsari1, Th. Kehagias1, T. Koukoula1, A. Das2, E. Monroy2 and Philomela Komninou1; 1Department of Physics, Aristotle University of Thessaloniki, GR-54124 Thessaloniki, Greece; 2CEA-CNRS Group “NanoPhysique et SemiConducteurs", INAC/SP2M/NPSC, CEA-Grenoble, Grenoble, France.

O7.9
Screw Threading Dislocations as Conductive Nanowires in AlN: Role of Doping. J. Kioseoglou1, E. Kalesaki1, I. Belabbas3,2, J. Chen4, G. Nouet2, Th. Karakostas1 and Philomela Komninou1; 1Department of Physics, Aristotle University of Thessaloniki, GR-54124, Thessaloniki, Greece; 2Centre de Recherche sur les Ions, les Matériaux et la Photonique, UMR CNRS 6252, ENSICAEN, 14050 Caen Cedex, France; 3Chemistry Department, Abderahmane Mira University, Bejaia (06000), Algeria; 4Laboratoire de Recherche sur les Propriétés des Matériaux Nouveaux, Université de Caen, IUT d’Alençon, 61250 Damigny, France.

O7.10
Abstract Withdrawn 

 

O7.11
Structural Dependent Optical Properties of Nonpolar A-Plane GaN Grown on r-Sapphire by Plasma Assisted Molecular Beam Epitaxy.Mohana K. Rajpalke, Thirumaleshwara N. Bhat, Basanta Roul, Mahesh Kumar and S. B. Krupanidhi; Materials Research Centre, Indian Institute of Science, Bangalore, karnataka, India.

O7.12
Influence of Substrate Potential on the Growth of GaN in Plasma-Assisted Metal Organic Chemical Vapor Deposition.Dever P. Norman1,2, Samir Hamad1,2, Quark Y. Chen3, Chun-Fu Chang3, Guo-Hsin Huang3, Filiz Keles1,2 and Hye-Won Seo1; 1Dept. of Physics and Astronomy, University of Arkansas at Little Rock, Little Rock, Arkansas; 2Dept. of Applied Science, University of Arkansas at Little Rock, Little Rock, Arkansas; 3Dept. of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan.

O7.13
Towards a Hybrid Solar Cell Device: Semiconductor Nanowires Grown on Nanostructured ITO Surfaces.Simon Ullrich1,2, Joachim P. Spatz1,2 and Stefan Kudera1; 1New Materials and Biointerfaces, Max Planck Institut for Intelligent Systems, Stuttgart, Germany; 2Biophysical Chemistry, University of Heidelberg, Heidelberg, Germany.

O7.14
Structural Properties of GaN Thin Films Grown on Graphene Layers.Hyobin Yoo1, Kunook Chung2, Gyu-Chul Yi2 and Miyoung Kim1; 1Dept. of Materials Science and Engineering, Seoul National University, Seoul, Korea, Republic of; 2Dept. of Physics and Astronomy, Seoul National University, Seoul, Korea, Republic of.

O7.15
Spectroscopic Properties of w-AlN and c-BN Doped with Rare Earths during High Temperature - High Pressure Synthesis.Ulrich Vetter1, Takashi Taniguchi2, John B. Gruber3, Gary W. Burdick4, Hans Hofsaess1, Sreerenjini Chandra3 and Dhiraj K. Sardar3; 1II. Physikalisches Institut, Georg-August-Universitaet Goettingen, Goettingen, Germany; 2Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba, Japan; 3Department of Physics and Astronomy, The University of Texas at San Antonio, San Antonio, Texas; 4Department of Physics, Andrews University, Berrien Springs, Michigan.

O7.16
Synthesis and Characterization of Cadmium Sulfide-MWCNT and Copper Sulfide-MWCNT Composites for Optoelectronic Devices.Marcos Silva1, Wagner Rodrigues1, André Ferlauto1, Luiz Ladeira1, Carlos Pinheiro1 and Douglas Miquita2; 1Physics, Universidade Federal de Minas Gerais (UFMG), Belo Horizonte, Minas Gerais, Brazil; 2Microscopy Center, UFMG, Belo Horizonte, Brazil.

O7.17
A-Edge Threading Dislocations in InN: Energetic Stability and Effect on the Optoelectronic Properties. Efterpi Kalesaki1, Joseph Kioseoglou1, Liverios Lymperakis2, Philomela Komninou1 and Theodoros Karakostas1; 1Department of Physics, Aristotle University of Thessaloniki, Thessaloniki, Greece; 2Computational Materials Design Department, Max-Planck-Institut für Eisenforschung, Düsseldorf, Germany.

O7.18
Near-Infrared Light Detection at Low Tempertaures of n-Type β-FeSi2/p-Type Si Heterojunction Photodiodes Fabricated by Facing-Targets Direct-Current Sputtering.Kyohei Yamashita, Nathaporn Promros, Shota Izumi, Ryuhei Iwasaki and Mahmoud Shaban; Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka, Japan.

O7.19
Enhancement of 1.55μm Luminescence of β-FeSi2 Grown from Solvent Phase by Cu-Si and Au-Si Eutectic Reaction on Si Substrate.Kensuke Akiyama1,2, Satoru Kaneko1,2, Hiroshi Funakubo2 and Masaru Itakura3; 1Electronics Department, Kanawaga Industrial Technology Center, Ebina, Kanagawa, Japan; 2Department of Innovative and Engineered Materials, Tokyo Institute of Technology, Yokohama, Kanagawa, Japan; 3Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka, Japan.

O7.20
New Device Structure for High-Efficiency GaN-Based Vertical Light Emitting Diodes.E. Lee, J. Sung, K. Jeon, J. Jeon, D. Lim, Min-Gu Kang, Y. Choi and J. Lee; LG Electronics Institute of Technology, Seoul, Korea, Republic of.

O7.21
The Effect of N/Ga Ratio on Structural, Morphological and Optical Properties of GaN Films and on Pt/GaN Schottky Diodes.Basanta Roul1,2, Mahesh Kumar1,2, Mohana K. Rajpalke1, Thirumaleshwara N. Bhat1, A. T. Kalghatgi2 and S. B. Krupanidhi1; 1Materials Research Centre, Indian Institute of Science, Bangalore, Karnataka, India; 2Central Research Laboratory, Bharat Electronics Limited, Bangalore, Karnataka, India.

O7.22
Abstract Withdrawn 

 

O7.23
Abstract Withdrawn 

 

O7.24
Abstract Withdrawn 

 

O7.25
Lithiated Silicene: A New Material with Promising Hydrogen Storage Potential.Tim H. Osborn and Amir A. Farajian; Wright State University, Dayton, Ohio.

O7.26
Novel Synthesis of a Thin-Film Solar Semiconductor Replacement - Copper Bismuth Sulfide.Brian D. Viezbicke and Dunbar P. Birnie; Materials Science & Engineering, Rutgers University, Piscataway, New Jersey.

O7.27
Spectroscopic Ellipsometry and Optical Hall-Effect Studies of Free-Charge Carriers in P-Type InN:Mg.Stefan Schoeche1, Tino Hofmann1, Nebiha Ben Sedrine2, Vanya Darakchieva2, Bo Monemar2, Xinqiang Wang4, Akihiko Yoshikawa3 and Mathias Schubert1; 1Department of Electrical Engineering, University of Nebraska-Lincoln, Lincoln, Nebraska; 2Department of Physics and Measurement Technology, Linkoeping University, Linkoeping, Sweden; 3Graduate School of Electrical and Electronic Engineering, Chiba University, Chiba, Japan; 4State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, China.

O7.28
Influence of Vapor Pressure on the Crystallinity, Composition and Electronic Properties of Sol-Gel Deposited Copper Zinc Tin Sulfide (CZTS) Thin Films.Vishnuvardhanan Vijayakumar and Dunbar Birnie; Materials Science and Engineering, Rutgers University, Piscataway, New Jersey.

O7.29
Nuclear Spin Polarization by out-of-Plane Spin Injection from Ferromagnet into an InAs Heterostructure.Tomotsugu Ishikura and Kanji Yoh; RCIQE, Hokkaido univ., Sapporo, Japan.

O7.30
Epitaxial Growth and Properties of AlxGal-xN Films Depositied by HVPE.Ji Sun Lee1,3, Dongjin Byun1, Hae-Kon Oh2, Young Jun Choi2, Hae-Yong Lee2, Jin-Ho Kim3, Tae-Young Lim3 and Jonghee Hwang3; 1Department of Materials Science and Engineering, Korea University, Seoul, Korea, Republic of; 2LumiGNtech Co., Seoul, Korea, Republic of; 3Optic & Electronic Ceramics Division, Korea Institute of Ceramic Engineering & Technology, Seoul, Korea, Republic of.

O7.31
Thermal Design Considerations For AlxGa1-xN Based Ultraviolet Light Emitting Diodes.Samuel Graham1, Bobby G. Watkins1, Vinod Adivarahan2, Asif Khan3 and Samuel Graham1; 1George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia; 2Nitek, Inc., Irmo, South Carolina; 3Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina.

O7.32
Assessment of Transparent Conducting Zinc Oxide as a Tunneling Contact to p-GaN.Srinitya Musunuru, Vamsi K. Kumbham, Lee Rodak, Kyoungnae Lee, Lawrence A. Hornak and Dimitris Korakakis; Lane Department of Computer Science and Electrical Engineering, West Virginia University, Morgantown, West Virginia.

O7.33
Investigating GaSb(001) Dry Etching by ICP-RIE on a Non-Silicon Containing Sample Holder.Hamad A. Albrithen1, Gale S. Petrich2, Leslie A. Kolodziejski3, Abdelmajid Salhi4 and Abdulrahman A. Almuhanna4; 1Physics and Astronomy, KAIN, King Saud University, Riyadh, Riyadh, Saudi Arabia; 2Research Laboratory of Electronics, MIT, Cambridge, Massachusetts; 3Department of Electrical Engineering and Computer Science, MIT, Cambridge, Massachusetts; 4National Center for Nano Technology Research, King Abdulaziz City for Science and Technology, Riyadh, Riyadh, Saudi Arabia.

O7.34
Amorphous Silicon Bragg Reflectors Fabricated by Oblique Angle Deposition.Sung Jun Jang1, Chan Il Yeo1 and Yong Tak Lee1,2,3; 1School of Information & Mechatronics, Gwanju Institute of Science and Technology, Gwangju, Korea, Republic of; 2Graduate Program of Photonic and Applied Physics, Gwangju Institute of Science & Technology, Gwangju, Korea, Republic of; 3Department of Nanobio Materials & Electronics, Gwangju Institute of Science & Technology, Gwangju, Korea, Republic of.

O7.35
Manipulating 3C-SiC Nanowire Morphology through Gas Flow Dynamics.Kasif Teker and Joseph A. Oxenham; Physics and Engineering, Frostburg State University, Frostburg, Maryland.

O7.36
Photoluminescence Study of Plasma-Induced Etching Damages in GaN.Yoshitaka Nakano1, Retsuo Kawakami2, Masahito Niibe3, Atsushi Takeichi2, Takeshi Inaoka3 and Kikuo Tominaga3; 1Chubu University, Kasugai, Aichi, Japan; 2University of Tokushima, Tokushima, Japan; 3University of Hyogo, Hyogo, Japan.

O7.37
Steady-State Photo-Capacitance Spectroscopy Investigation of Band-Gap States in AlGaN/GaN Hetero-Structures with Different Growth Conditions.Yoshitaka Nakano1, Yoshihiro Irokawa2, Yasunobu Sumida3, Shuichi Yagi3 and Hiroji Kawai3; 1Chubu University, Kasugai, Aichi, Japan; 2National Institute for Materials Science, Tsukuba, Japan; 3POWDEC, Oyama, Japan.

O7.38
Epitaxial Growth and Characterization of Cubic GaN on BP/Si(100) Substrates.Suzuka Nishimura1,2, Muneyuki Hirai1 and Kazutaka Terashima2; 1Solartes Lab., Fujisawa, Japan; 2Shonan Institute of Technology, Fujisawa, Japan.

O7.39
Heteroepitaxial Growth of GaP on Exact Si (100) Substrates by Metalorganic Chemical Vapor Deposition.Sangmoon Lee1,3, Youngjin Cho1, Seongho Jeon2, Jae-Gwang Shin1, Youngsoo Park1, Euijoon Yoon3 and U-In Chung1; 1Semiconductor Lab., Samsung Advanced Institute of Technology (SAIT), Yongin, Korea, Republic of; 2Energy Lab., Samsung Advanced Institute of Technology (SAIT), Yongin, Korea, Republic of; 3Department of Materials Science and Engineering, Seoul National University, Seoul, Korea, Republic of.

O7.40
Low Temperature Growth of GaN on Pseudo (111)Al Substrates by RF-MBE.Masato Hayashi, Taiga Goto, Tomohiro Yamaguchi, Tatsuhiro Igaki and Tohru Honda; Kogakuin Univ., Hachiohji, Tokyo, Japan.

O7.41
InN/GaN Heterostructure Growth by Migration Enhanced Epitaxial Afterglow (MEAglow).Peter W. Binsted1, Kenneth Scott A. Butcher1,2, Dimiter Alexandrov1,2, Penka Terziyska1 and Dimka Georgieva1; 1Electrical Engineering, Lakehead University, Thunder Bay, Ontario, Canada; 2Meaglow Ltd., Thunder Bay, Ontario, Canada.

O7.42
Admittance Spectroscopy of Hole States in GaSb/GaAs Quantum Dots with Type-II Band Alignment.Jinyoung Hwang1, Andrew J. Martin2, Joanna Millunchick2 and Jamie D. Phillips1; 1Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan; 2Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan.

O7.43
Enhanced Emission from InxGa1-xN-Based LED Structures Using III-Nitride Based Distributed Bragg Reflector.K. Lee1, L. E. Rodak1, V. Kumbham1, V. Narang2, A. Kadiyala1, R. Goswami1, B. A. Bearce1, J. Peacock1, K. Hite1, J. M. Dawson1, L. A. Hornak1 and D. Korakakis1; 1Lane Department of Computer Science and Electrical Engineering, West Virginia University, Morgantown, West Virginia; 2Department of Physics, West Virginia University, Morgantown, West Virginia.

O7.44
The Influence of Si Doping to BP(100) Layer on Si(100) by TEM.Muneyuki Hirai1, Suzuka Nishimura1, Hiroshi Nagayoshi2 and Kazutaka Terashima1; 1Materials Science, Shonan Institute of Technology, Fujisawa, Kanagawa, Japan; 2Tokyo National College of Technology, Hachioji, Tokyo, Japan.

 

O7.45Performance Comparison and Design Issues on Different GaN Power Transistor Structure.Chwan-Ying Lee, Chien-Chung Hung and Yung-Hsiang Chen; Nanoelectronic Technology, Industrial Technology Research Institute, HsinChu, Taiwan, Taiwan.  


 

SESSION O8: Nano-Scale Energy Generation
Chairs: Byung-Jae Kim and Joanna Millunchick
Friday Morning, December 2, 2011
Room 203 (Hynes)


8:15 AM O8.1
Molecular Scale Nanowires for Thermoelectric Energy Harvesting.Yue Wu, Purdue University, West Lafayette, Indiana.

8:30 AM O8.2
The Study on Band Structure Configurations and Phase Diagrams of Bi1-xSbx Thin Films.Shuang Tang1 and Mildred S. Dresselhaus2,3; 1Materials Science and Engineering, MIT, Cambridge, Massachusetts; 2Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts; 3Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts.

8:45 AM O8.3
Design of Vanadium Oxide Structures with Electrical Switching for Energy Utilization Applications.Changzheng Wu, Department of Chemistry & Hefei National Laboratory for Physical Sciences at Microscale, University of Science & Technology of China, Hefei, Anhui, China.

9:00 AM O8.4
Hydrofluoroethers as Heat-Transfer Fluids for OLEDs: Operational Range, Stability and Efficiency Improvement.Alex Zakhidov, Sebastian Reineke, Bjoern Luessem and Karl Leo; IAPP, TU-Dresden, Dresden, Germany.

9:15 AM O8.5
Ground State Energy Trend in Multilayered Coupled InAs/GaAs QDs Capped with InGaAs Layers: Effect of Thickness of InGaAs Layer and the RTA Treatment. Suhas Jejurikar, Alpana Mishra, Prasad Bhat and Subhananda Chakrabarti; Electrical Engineering, Indian Institute of Technology Bombay, Mumbai, India.

9:30 AM BREAK

10:00 AM O8.6
Multi-Layer GaSb/GaAs Quantum Dot Structures for Photovoltaics.Andrew J. Martin1, Timothy Saucer2, Jieun Lee2, Jinyoung Hwang3, Sung Joo Kim1, Xiaoqing Pan1, Jamie Phillips3, Vanessa Sih2 and Joanna Millunchick1; 1Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan; 2Physics, University of Michigan, Ann Arbor, Michigan; 3Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan.

10:15 AM O8.7
Real Time Observation of Mechanically Triggered Piezoelectric Current in Individual ZnO Nanobelts.Anjana Asthana1,2, Kasra Momeni2, Abhishek Prasad3, Yoke Khin Yap3 and Reza Shahbazian Yassar2; 1Dept. of Material Sc. & Engg., Michigan Technological U., Houghton, Michigan; 2Dept. of Mechanical Engg. & Engg. Mechanics, Michigan Technological University, Houghton, Michigan; 3Dept . of Physics, Michigan Technological University, Houghton, Michigan.

10:30 AM O8.8
Tuning the Work Function of ZnO:Al Transparent Conducting Electrode Thin Films through Defect Control.Rafael Jaramillo and Shriram Ramanathan; Harvard University, Cambridge, Massachusetts.

10:45 AM O8.9
Optical, Electronic, and Structural Properties of Pulsed Laser Deposited CuInSe2 and Cu(In,Ga)Se2 Thin Films for Photovoltaic Devices.Matthew Beres1,2 and Samuel S. Mao1,2; 1Mechanical Engineering, University of California, Berkeley, Berkeley, California; 2Lawrence Berkeley National Laboratory, Berkeley, California.

11:00 AM O8.10
Thermoelectric Properties of Wide Bandgap Semiconductors. Bahadir Kucukgok1, Liqin Su1, Andrew G. Melton1, ZhiQiang Liu2, Na Lu3 and Ian T. Ferguson1; 1Electrical and Computer Engineering, UNC Charlotte, Charlotte, North Carolina; 2Semiconductor Lighting Technology, Chinese Academy of Sciences, Beijing, China; 3Engineering Technology, UNC Charlotte, Charlotte, North Carolina.

11:15 AM O8.11
Mechanisms of Droplet Formation during Ga(In)AsBi Molecular Beam Epitaxy Growth.Gulin Vardar, Michael V. Warren, Myungkoo Kang, Sunyeol Jeon and Rachel S. Goldman; The University of Michigan, Ann Arbor, Michigan.

11:30 AM O8.12
High Temperature Seebeck Coefficient and Resistivity Measurement Setup.Lhacene Adnane, Ali Gokirmak, Helena Silva and Nick Williams; Electrical and Computer Engineering, University of Connecticut, Storrs, Connecticut.

11:45 AM O8.13
Cost Performance Trade off in Thermoelectric Modules with Low Fractional Area Coverage.Kazuaki Yazawa and Ali Shakouri; University of California Santa Cruz, Santa Cruz, California.

 

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