David Turnbull Lectureship Award

Robert Sinclair - David Turnbull Lectureship

Robert Sinclair, Stanford University

Tuesday, November 27
12:15 pm - 1:00 pm
Sheraton Boston Hotel, 2nd Floor, Grand Ballroom

Robert Sinclair, Stanford University (view biography)

Talk Presentation: In Situ High-Resolution Transmission Electron Microscopy of Material Reactions (view abstract)

Awarded "for his original contributions to the understanding of atomic arrangements in solids and their relationship to diverse materials phenomena including martensitic transformations, dislocation interactions with interfaces, phase equilibria in complex thin film systems, and nanoscale interactions in soft matter, for seminal contributions to in-situ and high resolution transmission electron microscopy, development of their combined use, and for passionate and dedicated teaching, advising, and academic leadership." 

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About the David Turnbull Lectureship

The David Turnbull Lectureship Award recognizes the career of a scientist who has made outstanding contributions to understanding materials phenomena and properties through research, writing and lecturing, as exemplified by David Turnbull.

Robert Sinclair Biography

 Robert (“Bob”) Sinclair is currently Professor and Chair of the Department of Materials Science and Engineering at Stanford University. He received his degrees in Materials Science from Cambridge University and came to the United States in 1973 as a postdoctoral researcher at the University of California, Berkeley. He joined the faculty at Stanford in 1977, where he has been ever since. He has had several visiting positions internationally including Grenoble, Cambridge and Matsushita Industrial Semiconductor Research Center in Osaka. His research has involved application of high-resolution electron microscopy to study various processes in materials, and this has culminated in the Distinguished Scientist Award (Physical Sciences) of the Microscopy Society of America in 2009. Sinclair has been Director of the Stanford Nanocharacterization Laboratory, a university-wide user facility, since its inception in 2002, and was Chair of a National Research Council committee to study “Midsize Facilities: The Infrastructure for Materials Research,” which was published in 2006. 

Talk Presentation: In Situ High-Resolution Transmission Electron Microscopy of Material Reactions

 The ability to directly observe the atomic arrangements in solid-state materials by high-resolution transmission electron microscopy (HREM) has been realized for some time. Taking this one step further, to actually document atomic rearrangements during the application of some externally applied, controlled stimulus such as heating, cooling, etc., allows us to reveal atomic behavior during real material processes. The application of this technique, in situ HREM, will be surveyed, with examples drawn from solid-state amorphization in multilayers and interfaces, metal-mediated crystallization of amorphous semiconductors and phase transformations in materials for advanced integrated circuits. By carefully controlling the conditions, both insight and quantitative analysis of various material phenomena are achieved. As this approach continues to evolve, more complex in situ conditions are being applied such as gaseous or liquid environments, combined external stimuli such as mechanical stress and heating, etc. The future prospects of this field, as aberration-corrected electron microscopes are becoming more widely available, will also be discussed.

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