Program - Symposium Q: Advances in Microcrystalline and Nanocrystalline Semiconductors - 1996

 

December 2 - 6, 1996

Chairs

 

  • Paul Alivisatos -- Univ of California-Berkeley
  • Robert Collins -- Pennsylvania State Univ
  • Philippe Fauchet -- Univ of Rochester
  • Toshikazu Shimada -- Hitachi Ltd
  • Isamu Shimizu -- Tokyo Inst of Technology
  • Jean-Claude Vial -- Univ J. Fourier Grenoble

Symposium Support

  • Asahi Glass Co., Ltd.
  • Hitachi Europe Ltd.
  • Hitachi Ltd
  • Kaneka Corporation
  • Mitsui-Toatsu Chemicals, Inc.
  • Sanyo Electric Co., Ltd.
  • Sharp Corporation
  • Xerox Palo Alto Research Center 

SESSION Q1: CURRENT STATUS AND FUTURE PROSPECTS OF RESEARCH IN NANO/MICROCRYSTALLINE SEMICONDUCTORS

 Chairs: Robert Collins and Philippe M. Fauchet
Monday Morning, December 2, 1996
Salon G (M) 8:15 AM Q1.
OPENING REMARKS AND AWARD PRESENTATION.

8:30 AM *Q1.1
NANO/MICROCRYSTALLINE SEMICONDUCTOR THIN FILMS, Kazunobu Tanaka, NAIR, Ibaraki, JAPAN.

9:30 AM BREAK

10:00 AM *Q1.2
SEMICONDUCTOR QUANTUM DOTS, Louis Brus, Columbia Univ, Dept of Chemistry, New York, NY.

11:00 AM *Q1.3
POROUS SEMICONDUCTORS, Leigh Canham, DRA Malvern, Electronics Sector, Worcestershire, UK.
 

SESSION Q2: PREPARATION AND PROPERTIES OF NANOCRYSTAL/DIELECTRIC MATERIALS

 Chair: David J. Lockwood
Monday Afternoon, December 2, 1996
Salon G (M) 1:30 PM *Q2.1
SYNTHESIS, MICROSTRUCTURE, AND OPTICAL PROPERTIES OF SEMICONDUCTOR NANOCRYSTALS FORMED BY ION-IMPLANTATION, John D. Budai, Oak Ridge National Laboratory, Solid State Div, Oak Ridge, TN.

2:00 PM Q2.2
EXCITONIC VS. MATRIX DEFECT-RELATED VISIBLE LUMINESCENCE OF Si NANOCRYSTALS IN SiO tex2html_wrap_inline829 , Kyu Sung Min, California Inst of Technology, Dept of Materials Science, Pasadena, CA; K. V. Shcheglov, California Inst of Technology, Dept of Applied Physics, Pasadena, CA; Chih M. Yang, California Inst of Technology, Dept of Materials Science, Pasadena, CA; Harry A. Atwater, California Inst of Technology, Dept of Applied Physics, Pasadena, CA; Mark L. Brongersma, FOM Inst, AMOLF, Amsterdam, NETHERLANDS; Albert Polman, FOM Inst, Amsterdam, NETHERLANDS.

2:15 PM Q2.3
PREPARATION AND CHARACTERIZATION OF SILICON NANOCRYSTALS IN AN SiO tex2html_wrap_inline829 MATRIX, Bruce J. Hinds, Gerald Lucovsky, Aditti Banerjee, North Carolina State Univ, Dept of Physics, Raleigh, NC; Robert Johnson, North Carolina State Univ, Dept de Physiscs, Raleigh, NC.

2:30 PM Q2.4
ROOM TEMPERATURE BAND-EDGE LUMINESCENCE FROM SILICON GRAINS PREPARED BY THE RECRYSTALLIZATION OF MESOPOROUS SILICON, Karen L. Moore, Univ of Rochester, Inst of Optics, Rochester, NY; Leonid Tsybeskov, Philippe M. Fauchet, Univ of Rochester, Dept of Electrical Engr, Rochester, NY; D. G. Hall, Univ of Rochester, Inst of Optics, Rochester, NY.

2:45 PM Q2.5
FERROMAGNETIC PROPERTIES OF SPARK-PROCESSED PHOTOLUMINESCING SILICON, Jonathan Hack, Matthias H. Ludwig, W. Geerts, Rolf E. Hummel, Univ of Florida, Dept of MS&E, Gainesville, FL.

3:00 PM BREAK
 

SESSION Q3: PHOTOLUMINESCENCE OF Si/SiO2 NANOSTRUCTURES

 Chair: John D. Budai
Monday Afternoon, December 2, 1996
Salon G (M) 3:30 PM *Q3.1
VISIBLE LUMINESCENCE IN Si/SiO2 SUPERLATTICES, David J. Lockwood, National Research Council, Inst for Microstructural Sciences, Ottawa, CANADA.

4:00 PM Q3.2
PHOTOLUMINESCENCE MECHANISM OF Si QUANTUM DOTS AND WELLS, Yoshihiko Kanemitsu, Univ of Tsukuba, Inst Physics, Ibaraki, JAPAN.

4:15 PM Q3.3
POSSIBLE MECHANISM OF THE 30-100 ps FAST AND EFFICIENT PHOTOLUMINESCENCE FROM nc-Si/a-SiO tex2html_wrap_inline829 DOPED WITH TRANSITION METALS, Stan Veprek, Th. Wirschem, J. Dian, S. Perna, R. Merica, M. Veprek-Heijman, Technische Univ Munich, Inst for Chemistry of Inorganic Matls, Garching, GERMANY; V. Perina, Inst of Nuclear Physics, Rez u Prahy, CZECH REPUBLIC; R. Heinecke, Technische Univ Munich, Inst for Physical Chem, Garching, GERMANY.

4:30 PM Q3.4
LIGHT EMISSION FROM INTRINSIC AND DOPED SILICON-RICH SILICON OXIDE: FROM THE VISIBLE TO 1.6 tex2html_wrap_inline835 m, Leonid Tsybeskov, Univ of Rochester, Dept of Electrical Engr, Rochester, NY; Karen L. Moore, Univ of Rochester, Inst of Optics, Rochester, NY; Philippe M. Fauchet, Univ of Rochester, Dept of Electrical Engr, Rochester, NY; D. G. Hall, Univ of Rochester, Inst of Optics, Rochester, NY.

4:45 PM Q3.5
ANNEALING BEHAVIOUR OF PHOTOLUMINESCENCE OF PECVD SILICON-RICH SILICA, Anthony J. Kenyon, Philip F. Trwoga, Univ College London, Dept of E&EC, London, UNITED KINGDOM; Christopher W. Pitt, Univ College London, Dept of Electronic & Electrical Engr, London, UNITED KINGDOM; Gunther Rehm, Friedrich-Alexander Univ, Nurnberg, GERMANY.
 

SESSION Q4: POSTER SESSION: THEORY OF NANO/MICROCRYSTALLINE SEMICONDUCTORS

 Chair: Paul Alivisatos
Monday Evening, December 2, 1996
8:00 P.M.
Grand Ballroom/Constitution (S)

Q4.1
MOLECULAR DYNAMIC SIMULATIONS OF SEMICONDUCTOR CLUSTERS, Girija Dubey, Godfrey Gumbs, CUNY-Hunter College, Dept of Physics & Astronomy, New York, New York.

Q4.2
AN AB INITIO STUDY OF VIBRATIONAL PROPERTIES OF SILICON NANOCLUSTERS, Jacob L. Gavartin, Univ of Liverpool, Dept of MS&E, Liverpool, UNITED KINGDOM; Clarence C. Matthai, Univ of Wales-Cardiff, Dept of Physics & Astronomy, Cardiff, UNITED KINGDOM.

Q4.3
THEORY OF PRESSURE EFFECTS ON SILICON NANOCRYSTALLITES, Guy Allan, Christophe Delerue, Michel Lannoo, IEMN-ISEN, Villeneuve d'Ascq, FRANCE.

Q4.4
THEORETICAL THERMAL CONDUCTIVITY OF POROUS SILICON: NONLINEAR BEHAVIOR, Jesus E. Lugo, UNAM, Facultad de Ciencias, Cuernavaca , MEXICO; Jesus A. del Rio, UNAM, Laboratorio de Energia Solar IIM, Temixco, MEXICO; Julia Taguena-Martinez, UNAM, Inst de Invest en Materials, Mexico City, MEXICO.

Q4.5
AND ELECTRONIC PROPERTIES OF SMALL HYDROGENATED SILICON CLUSTERS: Si tex2html_wrap_inline837 H tex2html_wrap_inline839 and Si tex2html_wrap_inline837 H_x^+  FILMS, Margit Zacharias, Univ of Rochester, Dept of Electrical Engr, Rochester, NY.

Q5.2
MULTICOLOR-EFFECTS OF LUMINESCING, NANOSTRUCTURED SILICON AFTER SPARK-PROCESSING IN PURE AND COMPOSITE GASES, Matthias H. Ludwig, A. Augustin, Rolf E. Hummel, Univ of Florida, Dept of MS&E, Gainesville, FL.

Q5.3
VISIBLE PHOTOLUMINESCENCE FROM Si ION-IMPLANTED AND THERMALLY ANNEALED SiO tex2html_wrap_inline829 FILMS, Yoshihiko Kanemitsu, Univ of Tsukuba, Inst Physics, Ibaraki, JAPAN; T. Komoda, Matsushita Electric Works Ltd, UK R&D Lab, Surrey, UNITED KINGDOM; N. Shimizu, S. Okamoto, Univ of Tsukuba, Inst Physics, Ibaraki, JAPAN; P. L.F. Hemment, B. J. Sealy, Univ of Surrey, Dept of Electronic & Electrical Engr, Surrey, UNITED KINGDOM.

Q5.4
THE ROLE OF DEFECTS AND BAND-TAIL STATES IN THE OBSERVED LUMINESCENCE FROM ION-IMPLANTED Si IN A SILICA MATRIX, Soumyendu Guha, Naval Research Laboratory, Washington, DC.

Q5.5
ANNEALING STUDIES OF VISIBLE LIGHT EMISSION FROM SILICON NANOCRYSTALS PRODUCED BY IMPLANTATION, Giorgio Ghislotti, Brookhaven National Laboratory, Dept of Applied Science, Upton, NY; Bent Nielsen, Brookhaven National Laboratory, Dept of Physics, Upton, NY; B. Sheey, F. DiMauro, Brookhaven National Laboratory, Dept of Chemistry, Upton, NY; F. Corni, Univ di Modena, Dipartimento di Fisica, Modena, ITALY; R. Tonini, G. Ottaviani, Univ di Modena, Dept di Fisica, Modena, ITALY.

Q5.6
Si tex2html_wrap_inline847 -IMPLANTED SiO tex2html_wrap_inline829 AS A LUMINESCING NANOPARTICLE SYSTEM, Toni Schuster, Thomas Dittrich, H. E. Porteanu, Thomas Fischer, Erich Hechtl, Vesselinka Petrova-Koch, Frederick Koch, Technische Univ Munich, Dept of Physics, Garching, GERMANY.

Q5.7
PHOTOLUMINESCENCE FROM ULTRA THIN SiO tex2html_wrap_inline829 LAYERS CONTAINING nm-SIZED SILICON CRYSTALLITES, Jan Linnros, A. Galeckas, Royal Inst of Technology, Dept of Electronics, Stockholm, SWEDEN; V. Grivickas, Royal Inst of Technology, Kista-Stockholm, SWEDEN.

Q5.8
PHOTOLUMINESCENCE CHARACTERISTICS OF HF-TREATED SILICON NANOCRYSTALS , Shinji Nozaki, Univ of Electro-Communications, Dept of Communication & Systems, Tokyo, JAPAN; Youichi Takakura, Seiichi Sato, Hiroshi Morisaki, Univ Electro-Communications, Dept of Communication & Systems, Tokyo, JAPAN.

Q5.9
UV AND BLUE PHOTOLUMINESCENCE FROM SILICON NANOCOLLOIDS, Shingo Iwasaki, Keisaku Kimura, Himeji Inst of Technology, Dept of Materials Science, Hyogo, JAPAN.

Q5.10
STRUCTURAL DISORDER IN VISIBLY LUMINESCING SILICON NANOPARTICLES, Eric Werwa, Kirk D. Kolenbrander, MIT, Dept of MS&E, Cambridge, MA; Jay B. Ewing, Reed College, Dept of Physics, Portland, OR; Arun A. Seraphin, Inst for Defense Analyses, Science & Technology Div, Alexandria, VA.

Q5.11
NANO-STRUCTURED SILICON-BASED FILMS WITH VISIBLE LIGHT EMISSION SYNTHESIZED BY LASER ABLATION, Tetsuya Makimura, Univ of Tsukuba, Inst of Materials Science, Ibaraki, JAPAN; Kouichi Murakami, Yasuhiko Kunii, Naoto Ono, Univ of Tsukuba, Inst Materials Science, Ibaraki, JAPAN.

Q5.12
LUMINESCENCE PROPERTIES OF Si NANOCRYSTALS, Samy El-Shall, Shoutian Li, Stuart Silvers, Virginia Commonwealth Univ, Dept of Chemistry, Richmond, VA.

Q5.13
OPTICAL PROPERTIES OF SiGe ALLOY NANOCRYSTALLITES PREPARED BY PULSED LASER ABLATION IN INERT GAS AMBIENT, Yuka Yamada, Matsushita Research Inst Tokyo Inc, Opto-Electro Mechanics Research Lab, Kawasaki, JAPAN; Takaaki Orii, Univ of Tsukuba, Inst of Applied Physics, Ibaraki, JAPAN; Takehito Yoshida, Matsushita Research Inst Tokyo Inc, Opto-Electro Mechanics Research Lab, Kawasaki, JAPAN.

Q5.14
SOLUTION SYNTHESIS OF Ge NANOCLUSTERS, Susan M. Kauzlarich, Boyd R. Taylor, Univ of California-Davis, Dept of Chemistry, Davis, CA.

Q5.15
TWO PHOTON SPECTROSCOPY OF Si NANOCLUSTERS, David E. Bliss, Stewart M. Cameron, Sandia National Laboratories, Albuquerque , NM; Jess P. Wilcoxon, Sandia National Laboratories, Org 1152, Albuquerque, NM.

Q5.16
THE RECOMBINATION STATISTIC OF THE VISIBLE PHOTOLUMINESCENCE OF Si NANOCRYSTALS, Joachim Diener, Dmitri Kovalev, Technische Univ Munich, Dept of Physics, Garching, GERMANY; Moshe Ben-Chorin, Weizmann Inst of Science, Dept of Chemical Physics, Rehovot, ISRAEL; Sergey D. Ganichev, Univ Regensburg, Inst Experimentelle und Angewandte Physik, Regensburg, GERMANY; G. Polisski, Frederick Koch, Technische Univ Munich, Dept of Physics, Garching, GERMANY.

Q5.17
LUMINESCENCE POLARIZATION MEMORY STUDIES OF RESONANTLY EXCITED Si NANOPARTICLES, Dmitri Kovalev, Technische Univ Munich, Dept of Physics, Garching, GERMANY; Moshe Ben-Chorin, Weizmann Inst of Science, Dept of Chemical Physics, Rehovot, ISRAEL; Joachim Diener, Boris Averboukh, G. Polisski, Frederick Koch, Technische Univ Munich, Dept of Physics, Garching, GERMANY.

Q5.18
RAMAN SCATTERING INVESTIGATION OF SUPERCONDUCTIVITY IN  CLATHRATES, Shaoli Fang, A. M. Rao, Leonid Grigorian, P. C. Eklund, Univ of Kentucky, Dept of Physics & Astronomy, Lexington, KY; Gene Dresselhaus, MIT, Dept of Physics, Cambridge, MA; Mildred S. Dresselhaus, MIT, Dept of EECS & Physics, Cambridge, MA; Shoji Yamanaka, H. Kawaji, Hiroshima Univ, Dept of Applied Chemistry, Hiroshima, JAPAN.

Q5.19
SEARCH FOR WIDE-BANDGAP SEMICONDUCTING PHASES OF Si CLATHRATES, Leonid Grigorian, Shaoli Fang, A. M. Rao, P. C. Eklund, Univ of Kentucky, Dept of Physics & Astronomy, Lexington, KY.

Q5.20
STRUCTURE AND VIBRATIONAL PROPERTIES OF ISOLATED CARBON NANOCRYSTALLITES, V. I. Merkulov, J. S. Lannin, Pennsylvania State Univ, Dept of Physics, University Park, PA; J. M. Cowley, Arizona State Univ, Dept of Physics, Tempe, AZ.

Q5.21
ELECTRICAL AND PHOTOELECTRICAL PROPERTIES OF THE STRUCTURES BASED ON ULTRATHIN DIAMOND-LIKE FILMS, V. I. Polyakov, Inst of Radio Engr & Electronics , Dept of Microelectronics, Moscow, RUSSIA; P. I. Perov, Inst of Radio Engr & Electronics , Moscow, RUSSIA; A. I. Rukovishnikov, A. V. Khomich, N. M. Rossukanyi, Inst of Radio Engr & Electronics , Dept of Microelectronics, Moscow, RUSSIA; A. M. Baranov, NPO Vakuummashpribor, Moscow, RUSSIA; B. L. Druz, Edward Ostan, A. Hages, Veeco Instruments.

 

SESSION Q6: POSTER SESSION: PREPARATION, PROCESSING, AND PROPERTIES OF III-V, II-VI, AND OTHER SEMICONDUCTOR NANOSTRUCTURES

 Chair: Paul Alivisatos
Monday Evening, December 2, 1996
8:00 P.M.
Grand Ballroom/Constitution (S)

Q6.1
MAGNETO-CAPACITANCE MEASUREMENTS ON MOCVD GROWN InGaAs QUANTUM DOTS, Adam Babinski, R. Leon, Australian National Univ, Dept of Electronic Matls Engr, Canberra, AUSTRALIA; C. Jagadish, Australian National Univ, Deptof Electronic Matls Engr, Canberra, AUSTRALIA.

Q6.2
DETERMINATION OF OPTICAL PROPERTIES OF THE MICRO FACETTED InGaAs QUANTUM WELLS GROWN ON V-GROOVED SUBSTRATE USING MAGNETOPHOTOLUMINESCENCE, Sung-Bock Kim, Jeong-Rae Ro, El-Hang Lee, ETRI, Dept of Research, Taejon, SOUTH KOREA.

Q6.3
THE FABRICATION OF SEMICONDUCTOR NANOSTRUCTURE ARRAYS ON A SILICON SUBSTRATE USING AN ANODIZED ALUMINUM TEMPLATE, S. P. McGinnis, West Virginia Univ, Dept of Electrical & Computer Engr, Morgantown, WV; Biswajit Das, West Virginia Univ, Microelectronic Systems Research Center, Morgantown, WV; J. N. Cleary, West Virginia Univ, Dept of Chemical Engr, Morgantown, WV.

Q6.4
EFFECTS OF Mn tex2html_wrap_inline855 DISTRIBUTION CONTROLLED BY CARBOXYLIC ACIDS ON PHOTOLUMINESCENCE INTENSITY OF NANOSIZED ZnS:Mn PARTICLES, Tetsuhiko Isobe, Takahiro Igarashi, Mamoru Senna, Keio Univ, Dept of Applied Chemistry, Yokohama, JAPAN.

Q6.5
SYNTHESIS OF Mn tex2html_wrap_inline855 DOPED CdS NANOCRYSTALS: ESR AND EXAFS OF THE LUMINESCENCE ACTIVATOR, Guillaume Counio, S. Esnouf, T. Gacoin, Philippe Barboux, Jean-Pierre Boilot, Ecole Polytechnique , Laboratoire Physique de la Matiere Condensee, Palaiseau, FRANCE.

Q6.6
SURFACE DERIVATIZATION OF NANOCRYSTALLINE CdSe SEMICONDUCTORS, Jin-Kyu Lee, Moungi G. Bawendi, Masaru Kuno, MIT, Dept of Chemistry, Cambridge, MA.

Q6.7
FEMTOSECOND SPECTROSCOPY OF DIRECT- AND INDIRECT-GAP SEMICONDUCTOR NANOCRYSTALS, Victor I. Klimov, Los Alamos National Laboratory, Chem Sci & Tech DIv, Los Alamos, NM; Vladimir A. Karavanskii, Inst of General Physics, Moscow, RUSSIA; Duncan W. McBranch, Los Alamos National Laboratory, CST-6, Los Alamos, NM; Geoffrey F. Strouse, Los Alamos National Laboratory, CST-1, Los Alamos, NM.

Q6.8
THE ROLE OF TRAPS IN QUANTUM CONFINED ZINC SELENIDE NANOCRYSTALS, Christine A. Smith, Univ of California-Davis, Dept of CE&MS, Davis, CA; Howard W.H. Lee, Lawrence Livermore National Laboratory, Photonics Group, Livermore , CA; Subhash H. Risbud, Univ of California-Davis, Dept of CE&MS, Davis, CA; J. Diane Cooke, Lawrence Livermore National Laboratory, New Technologies Engr Div, Livermore, CA.

Q6.9
OPTICAL ABSORPTION AND PHOTOLUMINESCENCE FROM PbSe NANOCRYSTALS, Soumyendu Guha, Naval Research Laboratory, Washington, DC; Subhash H. Risbud, Univ of California-Davis, Dept of CE&MS, Davis, CA; V. Lappert, B. Bonner, Univ of California-Davis, Davis, CA.

Q6.10
STRUCTURE OF SELENIUM AND ALKALI-SELENIUM NANOCLUSTERS IN ZEOLITE, Marie-Louise Saboungi, Andreas Goldbach, David C.L. Price, Argonne National Laboratory, Dept of Matls Science, Argonne, IL.

Q6.11
SYNTHESIS AND OPTICAL PROPERTIES OF MoS tex2html_wrap_inline829 NANOCLUSTERS IN THE STRONG QUANTUM CONFINEMENT REGIME, George A. Samara, Sandia National Laboratories, Dept of Nano & Adv Matls Chemistry, Albuquerque, NM; Jess P. Wilcoxon, Paula P. Newcomer, Sandia National Laboratories, Org 1152, Albuquerque, NM.

Q6.12
THE INVESTIGATION OF DONOR AND ACCEPTOR STATES IN THE NANOPARTICLES OF PbI tex2html_wrap_inline829 LAYERED SEMICONDUCTOR, Efrat Lifshitz, Technion-Israel Inst of Tech, Dept of Chemistry, Haifa, ISRAEL.

Q6.13
OPTICAL PROPERTIES OF CUPROUS OXIDE NANOCRYSTALS, Paul J. Rodney, Univ of Rochester, Laser Energetics Lab, Rochester , NY; Michal I. Freedhoff, American Inst of Physics, Public Informaton Div, College Park, MD; Alfred P. Marchetti, Univ of Rochester, Dept of Chemistry, Rochester, NY; George L. McLendon, Princeton Univ, Dept of Chemistry, Princeton, NJ; Philippe M. Fauchet, Univ of Rochester, Dept of Electrical Engr, Rochester, NY.

Q6.14
OPTICAL PROPERTIES OF ELECTRODEPOSITED COPPER/CUPROUS OXIDE NANOCOMPOSITES, Jay A. Switzer, Eric W. Bohannan, Teresa D. Golden, Chen-Jen Hung, Univ of Missouri-Rolla, Rolla, MO; Mark Shumsky, Univ of Missouri-Rolla, Dept of Ceramic Engr, Rolla, MO.

Q6.15
PREPARATION, CHARACTERIZATION AND OPTICAL PROPERTIES OF ZnO NANOPARTICLES, Shoutian Li, Samy El-Shall, Stuart Silvers, Virginia Commonwealth Univ, Dept of Chemistry, Richmond, VA.

Q6.16
MICROSTRUCTURE OF Tb-DOPED Y tex2html_wrap_inline863 _3  DOUBLE-BARRIER QUANTUM WELL MICROSTRUCTURE, Harley T. Johnson, L. B. Freund, A. Zaslavsky, Brown Univ, Engineering Div, Providence, RI.

Q7.2
EFFECT OF QUANTUM-WELL STRUCTURES ON THE THERMOELECTRIC FIGURE OF MERIT IN Si/Si tex2html_wrap_inline867 Ge tex2html_wrap_inline839 SYSTEM, Xiangzhong Sun, MIT, Dept of Physics, Cambridge, MA; Mildred S. Dresselhaus, MIT, Dept of EECS & Physics, Cambridge, MA; Kang L. Wang, Martin O. Tanner, Univ of California-Los Angeles, Dept of Electrical Engr, Los Angeles, CA.

Q7.3
ANALYSIS OF TWO-PHOTON ABSORPTION IN ZnSe QUANTUM WELL, Elena Hartung, Univ of North Carolina, Dept of Physics, Wilmington, NC.

Q7.4
GROWTH AND CHARACTERIZATION OF ZnMnSSe ALLOY FILMS, Fred Semendy, U.S. Army Research Laboratory, University Park, PA; Frank S. Flack, Pennsylvania State Univ, Dept of Physics, University Park, PA; Neil Bahmba, U.S. Army Research Laboratory, University Park, PA; Nitin Samarth, Ioulia Smortchkova, Pennsylvania State Univ, Dept of Physics, University Park, PA.

Q7.5
THERMOELECTRIC PROPERTIES OF THE SKUTTERUDITE  AND ITS THIN FILMS, Baoxing Chen, Jun-Hao Xu, Siqing Hu, Ctirad Uher, Univ of Michigan, Dept of Physics, Ann Arbor, MI.

Q7.6
MAGNETO-RESISTIVE EFFECTS IN Eu14MnPn11 (Pn = Sb, Bi), Susan M. Kauzlarich, Julia Y. Chan, Univ of California-Davis, Dept of Chemistry, Davis, CA.

Q7.7
CONICAL SCAN CRYSTALLOGRAPHY - A NEW TECHNIQUE FOR AUTOMATED CRYSTAL ORIENTATION MEASUREMENT IN THE TRANSMISSION ELECTRON MICROSCOPE, David J. Dingley, TexSEM Laboratories, Provo, UT; Yi Feng, Philips Electronic Instruments Co, Mahwah, NJ; Damian J. Dingley, TexSEM Laboratories, Dept of Software Development, Prove, UT.

Q7.8
IN SITU REAL TIME SPECTROSCOPIC ELLIPSOMETRY APPLIED TO THE GROWTH OF DIFFERENT SEMICONDUCTOR MATERIALS, Pierre Boher, Jean Louis Stehle, SOPRA, Bois Colombes, FRANCE.

 

SESSION Q8: III-V SEMICONDUCTOR NANOSTRUCTURES

 Chair: Toshikazu Shimada
Tuesday Morning, December 3, 1996
Salon G (M) 9:00 AM *Q8.1
SURFACE CHARGE MAPPING OF NANOMETER SCALE PILLAR ARRAYS, Bruce Alphenaar, Cavendish Laboratory, Hitachi Cambridge Lab, Cambridge, UNITED KINGDOM.

9:30 AM Q8.2
LIMITS AND PROPERTIES OF SIZE QUANTIZATION EFFECTS IN IN AS SELF ASSEMBLED QUANTUM DOTS, Klaus Hubert Schmidt, Univ of California-S Barbara, QUEST, Santa Barbara, CA; Gilberto Medeiros-Ribeiro, Hewlett Packard Co, Palo Alto, CA; Michael Cheng, Pierre M Petroff, Univ of California-S Barbara, Dept of Materials, Santa Barbara, CA.

9:45 AM Q8.3
OPTICAL PROPERTIES OF NANO CRYSTALLINE InP IN OPAL 3-DIMENSIONAL GRATINGS, N. P. Johnson, C. M. Sotomayor-Torres, Univ of Glasgow, Dept of Electronics & Electrical Engr, Glasgow, UK; H. E. Yates, Univ of Salford, Dept of Chemistry, Manchester, UNITED KINGDOM; Sergei G. Romanov, A.F. Ioffe Phys-Technical Inst, Physics of Dielectrics & Semiconductors, St. Petersburg, RUSSIA; M. E. Pemble, Univ of Salford, Dept of Chemistry, Manchester, UNITED KINGDOM; V. Butko, A.F. Ioffe Phys-Technical Inst, Physics of Dielectrics & Semiconductors, St. Petersburg, RUSSIA.

10:00 AM BREAK
 

SESSION Q9: CHEMICAL SYNTHESIS AND PROPERTES OF QUANTUM DOTS

 Chair: James R. Heath
Tuesday Morning, December 3, 1996
Salon G (M) 10:30 AM Q9.1
STRUCTURAL INVESTIGATIONS OF COLLOIDAL SEMICONDUCTOR NANOCRYSTAL HETEROSTRUCTURES: FACETTING AND EPITAXY, Andreas V. Kadavanich, Paul Alivisatos, Univ of California-Berkeley, Dept of Chemistry, Berkeley, CA.

10:45 AM Q9.2
PRESSURE- AND TEMPERATURE-INDUCED STRUCTURAL TRANSFORMATION IN SEMICONDUCTOR NANOCRYSTALS, Chia-C Jay Chen, Amy B. Herhold, Paul Alivisatos, Univ of California-Berkeley, Dept of Chemistry, Berkeley, CA.

11:00 AM Q9.3
SYNTHESIS AND CHARACTERIZATION OF HIGHLY LUMINESCENT (CdSe)ZnS QUANTUM DOTS, Frederic V. Mikulec, Bashir O. Dabbousi, MIT, Dept of Chemistry, Cambridge, MA; Klavs F. Jensen, MIT, Dept of Chemical Engr, Cambridge, MA; Moungi G. Bawendi, MIT, Dept of Chemistry, Cambridge, MA; Javier Rodriguez-Viejo, MIT, Dept of Chemical Engr, Cambridge, MA.

11:15 AM Q9.4
CATHODOLUMINESCENCE AND PHOTOLUMINESCENCE OF CdSe/ZnS THIN FILM QUANTUM DOT COMPOSITES, Klavs F. Jensen, Javier Rodriguez-Viejo, MIT, Dept of Chemical Engr, Cambridge, MA; Bashir O. Dabbousi, MIT, Dept of Chemistry, Cambridge, MA; Jason R. Heine, MIT, Dept of Chemical Engr, Cambridge, MA; Hedi Mattoussi, MIT, Dept of Chemistry, Cambridge, MA; Jurgen Michel, MIT, Dept of MS&E, Cambridge, MA; Moungi G. Bawendi, MIT, Dept of Chemistry, Cambridge, MA.

11:30 AM Q9.5
GROUP IV NANOCRYSTALS PREPARED BY A LOW-TEMPERATURE SOLUTION ROUTE, Susan M. Kauzlarich, Richard A. Bley, Boyd R. Taylor, Univ of California-Davis, Dept of Chemistry, Davis, CA; Howard W.H. Lee, Lawrence Livermore National Laboratory, Photonics Group, Livermore , CA; Gilardo R. Delgado, Univ of California-Davis, Dept of Applied Science, Livermore, CA.

11:45 AM Q9.6
COMPARATIVE OPTICAL STUDIES OF CHEMICALLY SYNTHESIZED SILICON NANOCRYSTALS, Howard W.H. Lee, Lawrence Livermore National Laboratory, Photonics Group, Livermore , CA; Gilardo R. Delgado, Univ of California-Davis, Dept of Applied Science, Livermore, CA; Susan M. Kauzlarich, Richard A. Bley, Univ of California-Davis, Dept of Chemistry, Davis, CA.

SESSION Q10: NUCLEATION AND GROWTH OF NANO/MICROCRYSTALLINE SILICON FILMS

 Chair: Masakiyo Matsumura
Tuesday Afternoon, December 3, 1996
Salon G (M) 1:30 PM *Q10.1
GROWTH AND STRUCTURE OF MICROCRYSTALLINE SILICON PREPARED WITH GLOW DISCHARGE AT VARIOUS PLASMA EXCITATION FREQUENCIES, Friedhelm Finger, Forschungszentrum Julich, ISI-PV, Julich, GERMANY; Reinhard Carius, Peter Hapke, Lothar Houben, KFA Julich GmbH, ISI-PV, Julich, GERMANY; Martina Luysberg, Univ of California-Berkeley, Dept of MS&ME, Berkeley, CA; Marian Tzolov, Bulgaria Academy of Sciences, Central Lab for Solar Energy & New Energy Sources, Sofia, BULGARIA.

2:00 PM Q10.2
SUBSTRATE-SURFACE EFFECT ON INITIAL GROWTH PROCESS OF MICROCRYSTALLINE SILICON FILMS, Kazunobu Tanaka, NAIR, Ibaraki, JAPAN; Kazuyuki Ikuta, NAIR, Joint Res Ctr for Atom Technology, Ibaraki, JAPAN; Satoshi Yamasaki, Tetsuji Yasuda, NAIR, Ibaraki, JAPAN; Jung-Woo Park, JRCAT-ATP, Ibaraki, JAPAN.

2:15 PM Q10.3
GRAIN-SIZE CONTROL OF NANOCRYSTALLINE SILICON BY PULSED GAS PLASMA PROCESS, Toru Ifuku, Masanori Otobe, Tokyo Inst of Technology, Dept of Physical Electronics, Tokyo, JAPAN; Akira Itoh, Tokyo Inst of Technology, Research Ctr for Quantum Effect Electronics, Tokyo, JAPAN; Shunri Oda, Tokyo Inst of Technology, Dept of Physical Electronics, Tokyo, JAPAN.

2:30 PM Q10.4
PREPARATION OF MICROCRYSTALLINE SILICON WITH THE LAYER-BY-LAYER TECHNIQUE AT VARIOUS PLASMA EXCITATION FREQUENCIES, Peter Hapke, Reinhard Carius, KFA Julich GmbH, ISI-PV, Julich, GERMANY; Friedhelm Finger, Forschungszentrum Julich, ISI-PV, Julich, GERMANY; Andreas Lambertz, KFA Julich GmbH, ISI-PV, Julich, GERMANY; Heribert Wagner, Forschungszentrum Julich, ISI-PV, Julich, GERMANY; Oliver Vetterl, KFA Julich GmbH, ISI-PV, Julich, GERMANY.

2:45 PM BREAK 

SESSION Q11: PREPARATION, PROPERTIES, AND APPLICATIONS OF POLYCRYSTALLINE SILICON FILMS

 Chair: Kazunobu Tanaka
Tuesday Afternoon, December 3, 1996
Salon G (M) 3:15 PM *Q11.1
EXCIMER-LASER CRYSTALLIZATION OF SILICON-CARBON FILMS AND THEIR APPLICATION TO HETERO THIN-FILM TRANSISTORS, Masakiyo Matsumura, Kwansoo Choi, Tokyo Inst of Technology, Dept of Physical Electronics, Meguro-ku, Tokyo, JAPAN.

4:00 PM Q11.3
SINGLE-CRYSTAL SILICON FILMS VIA A LOW-SUBSTRATE-TEMPERATURE EXCIMER-LASER CRYSTALLIZATION METHOD, Robert S. Sposili, Columbia Univ, Dept of Chem/Mining Engr & Matls Science, New York, NY; M. A. Crowder, Columbia Univ, Dept of Chemical/Mining Engr & Matls Science, New York, NY; James S. Im, Columbia Univ, Dept of CE&MS, New York, NY.

4:15 PM Q11.4
PURELY INTRINSIC POLYSILICON FILMS BY HOT WIRE CHEMICAL VAPOR DEPOSITION, J. K. Rath, K. F. Feenstra, Utrecht Univ, Debye Inst, Ultrecht, NETHERLANDS; D. Ruff, Philipps Univ Marburg, Marburg, GERMANY; H. Meiling, Utrecht Univ, Debye Inst, Ultrecht, NETHERLANDS; Ruud Schropp, Utrecht Univ, Atomic and Interface Physics, Utrecht, NETHERLANDS.

4:30 PM Q11.5
LOW-TEMPERATURE FORMATION OF DEVICE-QUALITY POLYSILICON FILMS BY CAT-CVD METHOD, Hideki Matsumura, JAIST, Dept of Matls Science, Ishikawa, JAPAN; Akira Heya, Ritsuko Iizuka, JAIST, Ishikawa, JAPAN; Akira Izumi, JAIST, Dept of Materials Science, Ishikawa, JAPAN.

4:45 PM Q11.6
LARGE GRAIN MICRO- AND POLY-CRYSTALLINE SILICON DEPOSITED AT 250 tex2html_wrap_inline873 C BY PULSED-GAS PECVD, Easwar Srinivasan, Gregory N. Parsons, Steve J. Ellis, North Carolina State Univ, Dept of Chemical Engr, Raleigh, NC; Robert J. Nemanich, North Carolina State Univ, Dept of Physics, Raleigh, NC.
 

SESSION Q12: PREPARATION, PROCESSING, AND PROPERTIES OF POROUS SILICON I

 Chair: Leigh Canham
Wednesday Morning, December 4, 1996
Salon G (M) 8:30 AM *Q12.1
POROUS SILICON FROM HYDROGENATED AMORPHOUS SILICON: COMPARISON WITH CRYSTALLINE POROUS SILICON, R. B. Wehrspohn, Jean-Noel Chazalviel, Ecole Polytechnique , Lab Physique de la Matiere Condensee, Palaiseau, FRANCE; F. Ozanam, Ecole Polytechnique , Lab de Physique de la Matiere Condensee, Palaiseau, FRANCE; I. Solomon, Ecole Polytechnique , Lab Phys de la Matiere Condensee, Palaiseau, FRANCE.

9:00 AM Q12.2
COMPARATIVE THEORETICAL STUDY OF AMORPHOUS AND CRYSTALLINE SILICON CLUSTERS, Michel Lannoo, Christophe Delerue, Guy Allan, IEMN-ISEN, Villeneuve d'Ascq, FRANCE.

9:15 AM Q12.3
CONTROL OF THE SHAPE AND ORIENTATION OF Si CRYSTALLITES IN POROUS SILICON, G. Polisski, Boris Averboukh, Dmitri Kovalev, Frederick Koch, Technische Univ Munich, Dept of Physics, Garching, GERMANY.

9:30 AM Q12.4
ATOMIC LAYER ETCHING OF POROUS SILICON, Carsten Voelkmann, Univ of California-Berkeley, Dept of Physics, Berkeley, CA; Vesselinka Petrova-Koch, Technische Univ Munich, Dept of Physics, Garching, GERMANY; Imke Helga Libon, Univ of California-Berkeley, Dept of Physics, Berkeley, CA.

9:45 AM Q12.5
OPTICAL PROPERTIES OF DEUTERIUM TERMINATED POROUS SILICON, Matsumoto Takahiro, ERATO JST, Single Quantum Dot Project, Ibaraki, JAPAN; Yasuaki Masumoto, ERATO JST, Single Quantam Dot Proj, Tsukuba, JAPAN; Koshida Nobuyoshi, Tokyo Univ of Agric & Tech, Electronic & Information Engr, Tokyo, JAPAN.

10:00 AM Q12.6
POROUS SILICON LAYER FORMATION AND HYDROGEN INCORPORATION, Philippe Allongue, Catherine Henry de Villeneuve, ESPCI, Dept de Physique des Liquides et Electrochimie, Paris, FRANCE; Jean Emmanuel Peou, Claude Levy-Clement, CNRS, Lab Physique des Solides de Bellevue, Meudon, FRANCE.

10:15 AM BREAK
 

SESSION Q13: FUNDAMENTAL OPTICAL AND ELECTRONIC PROPERTIES OF SILICON NANOSTRUCTURES

 Chair: Michel Lannoo
Wednesday Morning, December 4, 1996
Salon G (M) 10:30 AM Q13.1
SOME CRITERIA FOR THE DESIGN OF EFFICIENT SILICON NANOSTRUCTURES, Jean-Claude Vial, Irina Mihalcescu, Univ J. Fourier Grenoble, Lab Spectrometrie Physique.
 

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