Meetings & Events

Symposium J—In-Situ Electron And Tunnelling Microscopy Of Dynamic Processes

IN SITU ELECTRON AND TUNNELING MICROSCOPY OF
DYNAMIC PROCESSES
November 27 - 30, 1995

Chairs

Renu Sharma Marija Gajdardziska-Josifovska
Arizona State University University of Wisconsin, Milwaukee

Pratibha L. Gai Robert Sinclair
DuPont Science & Eng. Labs Stanford University

Lloyd J. Whitman
Naval Research Laboratory

Symposium Support

Gatan Incorporated
DuPont Science and Engineering Laboratories
Philips Electronic Instruments Company
JEOL USA Incorporated
NSA Nissei Sangyo America Ltd.
Park Scientific Instruments
RHK Technology
Omicron Associates
Hitachi Ltd.
American Chemical Society

TUTORIAL
FTJ: IN SITU ELECTRON MICROSCOPY:
METHODOLOGY AND RANGE OF APPLICATIONS
Instructors: Robert Sinclair, Stanford University
Edward D. Boyes, DuPont
Monday, November 27, 8:30 a.m. - 12:00 p.m.
Wellsley (M)

*Directly observing the continuous development of microstructures in dynamic experiments
* Choice of thin foil specimens, with diffraction and atomic resolution imaging, in TEM; or larger samples and greater flexibility, but lower resolution, in SEM
*Temperature range from below-170C to >1000C
*Controlled gas environments for catalysts, oxidation, reduction, processing and surface effects
*Specialized facilities for heating, cooling, straining, environment, magnetization, electrical potential and current
*Influence of the electron beam and how to minimize the impact
*Practical experimental methods, data recording and analysis, and the design of reliable experiments
*Future developments

There are many obvious advantages of in situ observations
at the microscopic level. Most notably, there is simply no
substitute for observing material behavior as it occurs, both
directly and continuously. In the proper experiments,
speculation on the sequence of events is unnecessary, and
important steps in a reaction are not overlooked. The major
challenges then are to design the procedure and the hardware to
reveal the most important information (preferably in a
quantitative manner) and to ensure that the experimental
circumstances warrant the conclusions that are drawn (i.e., to
avoid artifacts).

This tutorial will emphasize the methodology and
procedures which are required to ensure reproducible and
interpretable data from dynamic observations. The wide range of
applications will be illustrated by focusing on several separate
techniques. In transmission electron microscopy, microstructural
and crystallographic information is provided by the combination
of imaging and diffraction, even at the lattice resolution level.
This can be obtained under heating and cooling conditions,
specimen straining, application of electrical potential and
current, varying magnetic fields, etc. It is essential here to
overcome the limitations of the thin-foil specimen and the
microscope environment (including possible influence of the
imaging beam). Extension of these techniques to varying
environments (environmental microscopy) ranging from moderate gas
pressures (e.g., low mbar) to ultra-high vacuum conditions allows
insight into catalyst behavior, oxidation and reduction, and
surface effects. The scanning electron microscope offers even
greater potential for in situ studies, because of the larger
space around the sample combined with the depth of field of the
imaging conditions, but at the expense of resolution,
crystallographic and often microstructural information.
In all cases, efforts to ensure "proper experiments: will be
discussed.

*Invited Paper

SESSION J1: STM STUDIES OF SURFACE DYNAMICS
Chair: L.J. Whitman
Monday Afternoon, November 27
Wellesley (M)

1:30 P.M. *J1.1
RECOMBINATION-ENHANCED DYNAMICS OF SURFACE VACANCIES ON GaAs(110), Michael B. Weimer, Texas A&M University, Department of Physics, College Station, TX.

2:00 P.M. J1.2
MOBILE POINT DEFECTS AND STRUCTURAL TRANSFORMATIONS ON Pb DOPED Ge(111)-c(2X8) SURFACES, Ing-Shouh Hwang, Institute of Physics, Academia Sinica, Taipei, Taiwan; Silva K. Theiss and J.A. Golovchenko, Harvard University, Department of Physics, Cambridge, MA.

2:15 P.M. *J1.3
SCANNING TUNNELING MICROSCOPY STUDY OF DYNAMICS ON SILICON SURFACE AT HIGH TEMPERATURES, Hiroshi Tokumoto, Joint Research Center for Atom Technology (JRCAT), National Institute for Advanced Interdisciplinary Research (NAIR), Ibaraki, Japan.

2:45 P.M. J1.4
ATOM MANIPULATION USING NEGATIVE ION RESONANCES, AND ITS USE IN THE STUDY OF SILICON OXIDATION, R. Martel, Ph. Avouris and I.W. Lyo, IBM T.J. Watson Research Center, Yorktown Heights, NY.

3:00 P.M. BREAK

3:30 P.M. *J1.5
STM OBSERVATIONS OF SURFACE-CATALYZED REACTIONS ON AG(110), Janice E. Reutt-Robey, W.W. Pai and M.E. Peng, University of Maryland, Department of Chemistry, College Park, MD.

4:00 P.M. J1.6
COADSORBATE INDUCED RECONSTRUCTION OF A STEPPED Pt(111) SURFACE BY SULFUR AND CO: A NEW RESTRUCTURING MECHANISM AND ITS IMPLICATIONS IN CATALYSIS, J.D. Batteas, J.C. Dunphy, G.A. Somorjai and M. Salmeron, Lawrence Berkeley Laboratory, Center for Advanced Materials, Berkeley, CA.

4:15 P.M. *J1.7
THE GROWTH MODE AND STRUCTURE OF HYDROXY-TERMINATED HEXANETHIOL SELF-ASSEMBLED MONOLAYERS ON Au(111) CHARACTERIZED BY SCANNING TUNNELING MICROSCOPY, G.E. Poirier, National Institutes of Standards and Technology, Gaithersburg, MD; and E. Pylant, University of Texas, Department of Chemistry, Austin, TX.

4:45 P.M. J1.8
ARE SINGLE MOLECULAR WIRES CONDUCTING?, J.J. Arnold, L.A. Bumm, M.T. Cygan, N.F. Shedlock, T.D. Dunbar, D.L. Allara, P.S. Weiss, Pennsylvania State University, Department of Chemistry, University Park, PA; T. Burgin and J.M. Tour, University of South Carolina, Department of Chemistry, Columbia, SC.

JOINT SESSION J2/D4: IN-SITU EPITAXIAL DYNAMICS
Chair: B.S. Schwartzentruber
Tuesday Morning, November 28
Wellesley (M)

9:00 A.M. *J2.1/D4.1
SNAPSHOTS OF SURFACE STRUCTURE DURING MBE GROWTH OF GaAs AND AlAs, P.I. Cohen, S.M. Seutter and A.M. Dabiran, University of Minnesota, Department of Electrical Engineering, Minneapolis, MN.

9:30 A.M. J2.2/D4.2
IN-SITU STM STUDY OF GaSb GROWN ON GaAs(001) BY MBE, P.M. Thibado, B.R. Bennett, B.V. Shanabrook and L.J. Whitman, Naval Research Laboratory, Washington, DC.

9:45 A.M. J2.3/D4.3
GROWTH MORPHOLOGY OF VICINAL HILLOCKS ON THE (101) FACE OF KH2PO4: EVIDENCE OF SURFACE DIFFUSION, T.A. Land, J.J. De Yoreo and J.D. Lee, Lawrence Livermore National Laboratory, Department of Chemistry and Materials Science, Livermore, CA.

10:00 A.M. BREAK

10:30 A.M. *J2.4/D4.4
DYNAMIC PROCESSES ON METAL SURFACES STUDIES BY SCANNING TUNNELING MICROSCOPY, F. Besenbacher, University of Aarhus, Institute of Physics and Astronomy, Aarhus C, Denmark.



11:00 A.M. J2.5/D4.5
AN IN SITU STM STUDY OF Cu AND Ni DEPOSITION ON Cu(100), T.P. Moffat, National Institute of Standards and Technology, Materials Science and Engineering Laboratory, Gaithersburg, MD.

11:15 A.M. J2.6/D4.6
EARLY STAGES OF METAL FILM GROWTH BY CHEMICAL VAPOR DEPOSITION, D.P. Adams, T.M. Mayer, B.S. Swartzentruber, E. Chason, Sandia National Laboratories, Albuquerque, NM; S.G. Bales and D. Chrzan, Sandia National Laboratories, Livermore, CA.

11:30 A.M. J2.7/D4.7
DIRECT MEASUREMENTS OF THE KINETICS OF Si ADDIMERS ON Si(001) USING ATOM-TRACKING STM, B.S. Swartzentruber, Sandia National Laboratories, Albuquerque, NM.

SESSION J3: INTRODUCTION TO IN-SITU TECHNIQUES
Chairs: P.L. Gai and R. Sharma
Tuesday Afternoon, November 28
Wellesley (M)

1:30 P.M. *J3.1
MIMICKING THE REAL WORLD AND EXPLORING NEW ONES WITH IN-SITU ELECTRON MICROSCOPY, Archie Howie, University of Cambridge, Cavendish Laboratory, Cambridge, United Kingdom.

2:00 P.M. J3.2
IN-SITU HREM HEATING EXPERIMENTS AT VERY HIGH TEMPERATURES, H. Saka, Nagoya University, Quantum Engineering, Nagoya, Japan; and T. Kamino, Hitachi Instruments Engg Co. Ltd, Techno Research Laboratory, Hitachinaka, Japan.

2:15 P.M. J3.3
IN SITU ANNEALING OF MgO, J. Bentley, Oak Ridge National Laboratory, Metals and Ceramics Division, Oak Ridge, TN; M.T. Johnson and C. B. Carter, University of Minnesota, Department of Chemical Engineering and Materials Science, Minneapolis, MN.

2:30 P.M. J3.4
HVEM IN SITU STUDY OF HIGH-TEMPERATURE DEFORMATION OF METAL AND CERAMIC CRYSTALS, U. Messerschmidt, D. Baither, M. Bartsch, B. Baufeld, D. Häußler, Max Planck Institute of Microstructure Physics, Halle/Saale, Germany; and M. Wollgarten, KFA Jülich, Jülich, Germany.

2:45 P.M. BREAK

3:15 P.M. *J3.5
IN-SITU STUDIES OF STRUCTURAL CHANGES IN SOLID CATALYSTS UNDER OPERATING CONDITIONS, John Meurig Thomas, The Royal Institution, Davy-Faraday Research Laboratory, London, United Kingdom.

3:45 P.M. J3.6
1/60 SECOND TIME RESOLVED HIGH-RESOLUTION ELECTRON MICROSCOPY OF SURFACE DIFFUSION OF TUNGSTEN ATOMS ON MGO (001) SURFACES, N. Tanaka, H. Kimata and T. Kizuka, Nagoya University, Department of Applied Physics, Nagoya, Japan.

4:00 P.M. J3.7
TRANSMISSION ELECTRON MICROSCOPY AND DIFFRACTION STUDY OF PHASE TRANSITION IN OXIDES, Jerome Pacaud, University of Poitiers, France; Ragnvald Hoier, University of Trondheim, Department of Physics, Trondheim, Norway; Mi-Yung Kim, Jian-Min Zuo and John Spence, Arizona State University, Physics Department, Tempe, AZ.

4:15 P.M. *J3.8
IN SITU HVEM OBSERVATIONS OF DEFORMATION AND FRACTURE IN MULTILAYER MATERIALS, M.A. Wall, T.W. Barbee Jr. and T.P. Weihs, Lawrence Livermore National Laboratory, Chemistry and Materials Science Department, Livermore, CA.

SESSION J4: RECENT ADVANCES IN CONTROLLED IN-SITU
HREM: SURFACE AND INTERFACE DYNAMICS
Chairs: J.M. Gibson and R. Hull
Wednesday Morning, November 29
Wellesley (M)

8:45 A.M. *J4.1
CONTROLLED ENVIRONMENT (ECELL) TEM FOR DYNAMIC IN-SITU REACTION STUDIES WITH HREM LATTICE IMAGING, Ed Boyes, Pratibha Gai and Lee Hanna, DuPont Science and Engineering Laboratories, Central Research and Development, Wilminton, DE.

9:30 A.M. J4.2
DIRECT ATOMIC-SCALE PROBING OF GAS MOLECULE-SOLID SURFACE DYNAMIC REATION IN VANADIUM HYDROGEN PHOSPHATE CATALYSTS, Pratibha L. Gai and C.C. Torardi, DuPont Science and Engineering Laboratories, Central Research and Development, Wilmington, DE.

9:30 A.M. J4.3
IN SITU OBSERVATION OF AN ELECTROCHEMICAL ETCHING REACTION IN SILICON, Frances M. Ross, Lawrence Berkeley National Laboratory, Berkeley, CA; and Peter C. Searson, Johns Hopkins University, Department of Materials Science and Engineering, Baltimore, MD.

9:45 A.M. BREAK

10:15 A.M. *J4.4
IN SITU REAL TIME OBSERVATION OF CHEMICAL VAPOR DEPOSITION USING AN ENVIRONMENTAL TRANSMISSION ELECTRON MICROSCOPE, Jeff Drucker, University of Texas at El Paso, Department of Physics, El Paso, TX; Renu Sharma, Karl Weiss, B.L. Ramakrishna, Arizona State University, Center for Solid State Science, Tempe, AZ; and John Kouvetakis, Arizona State University, Department of Chemistry and Biochemistry, Tempe, AZ.

10:45 A.M. J4.5
DYNAMIC TED STUDIES OF GOLD DEPOSITION ONTO THE SI(111)-(5X2) AND ([[radical]]3X[[radical]]3)R30deg. AU SURFACES, Richard Plass and Laurence D. Marks, Northwestern University, Department of Materials Science and Engineering, Evanston, IL.

11:00 A.M. J4.6
KINETICS OF NITRIDATION OF Cu/Ti AND Cu/Cr THIN FILMS USING ENVIRONMENTAL CALL IN TEM, R. Sharma, Z. Atzmon and J.W. Mayer, Arizona State University, Center for Solid State Science, Tempe, AZ.

11:15 A.M. J4.7
TEM OBSERVATIONS OF SURFACE MIGRATION AND NECK FORMATION DURING THE IN SITU HEATING OF NANO-SIZED ZIRCONIUM OXIDE PARTICLES, J. Rankin, Brown University, Division of Engineering, Providence, RI.

11:30 A.M. J4.8
IN SITU TEM STUDIES OF RECRYSTALLIZATION IN Dy2O3 FILMS, V. Yu. Kolosov, A.V. Kozhyn and S.B. Fisheleva, Ural State Economic University, Ekaterinburg, Russia.

SESSION J5: HOLOGRAPHY AND THIN FILMS
Chairs: A. Howie and J.M. Thomas
Wednesday Afternoon, November 29
Wellesley (M)

1:30 P.M. *J5.1
DYNAMIC OBSERVATION OF VORTICES IN SUPERCONDUCTORS USING ELECTRON WAVES, Akira Tonomura, Advanced Research Laboratory, Hitachi, Ltd., Saitama, Japan.

2:00 P.M. J5.2
AN IN-SITU TEM STUDY OF THE DYNAMIC BEHAVIOR OF DOMAIN WALLS IN A FREE-STANDING LEAD TITANATE THIN FILM UNDER EXTERNAL STRESS, S.B. Ren, C.J. Lu, H.M. Shen and Y.N. Wang, Nanjing University, National Laboratory of Solid-State Microstructures, Department of Physics, Nanjing, China.

2:15 P.M. J5.3
A NOVEL TECHNIQUE FOR DETERMINING LOCAL DIELECTRIC FUNCTION DURING FERROELECTRIC TO PARAELECTRIC PHASE TRANSFORMATION IN BaTiO3 WITH A TRANSMISSION EELS, Kalpana S. Katti, M. Qian and M. Sarikaya, University of Washington, Department of Materials Science and Engineering, Seattle, WA.

2:30 P.M. J5.4
IN-SITU THIN-FILM NANOCRYSTALLIZATION, M. Libera, Stevens Institute of Technology, Department of Materials Science and Engineering, Hoboken, NJ.

2:45 P.M. BREAK

3:15 P.M. *J5.5
IN SITU, REAL-TIME EMISSION MICROSCOPY APPLIED TO CHEMICAL VAPOR DEPOSITION OF DIAMOND AND NITRIDES, Martin E. Kordesch, Ohio University, Department of Physics, Athens, OH.

3:45 P.M. J5.6
IN-SITU HOT STAGE TEM STUDY OF AMORPHOUS TO CRYSTALLINE TRANSFORMATION Ti-Al THIN FILMS, S. Swaminathan, R. Banerjee, R. Wheeler and H.L. Fraser, Ohio State University, Department of Materials Science and Engineering, Columbus, OH.

4:00 P.M. J5.7
IN-SITU TEM STUDY OF CRYSTALLISATION OF AMORPHOUS SBOX FILMS, R. Nayak, A.K. Petford-Long, R.C. Doole, University of Oxford, Department of Materials, Oxford, United Kingdom; and C.N. Afonso, Instituto de Optica, Madrid, Spain.

4:15 P.M. POSTER PREVIEW - 3 minute oral presentation of J8 posters.

J8.1 IN SITU DYNAMIC ATOMIC-LEVEL INVESTIGATION OF A WEAK CHARGE TRANSFER LAMELLAR INTERCALATION PROCESS, L. Diebolt, Arizona State University, Department of Chemistry and Biochemistry, Tempe, AZ; R. Shama, M. McKelvy, Arizona State University, Center for Solid State Science, Tempe, AZ; and W.S. Glaunsinger, Arizona State University, Department of Chemistry and Biochemistry, Tempe, AZ.

J8.2 OBSERVATION OF VACANCY CLUSTERING IN Si CRYSTALS DURING IN SITU ELECTRON IRRADIATION IN A HIGH VOLTAGE ELECTRON MICROSCOPE, L. Fedina, J. Van Landuyt, University of Antwerp, RUCA-EMAT, Antwerp, Belgium; J. Vanhellemont, IMEC, Leuven, Belgium; and A. Aseev, Institute of Semiconductor Physics, Russian Academy of Sciences, Novosibirsk, Russia.

J8.3 ELECTRONIC IRRADIATION EFFECT ON BiMoO CATALYSTS OBSERVED IN HRTEM STUDY, M. Avalos-Borja, D.H. Galván, Instituto de Física-UNAM, Lab. de Ensenada, Ensenada, Mexico; and X.G. Ning, Chinese Academy of Sciences, Institute of Metal Research, Laboratory of Atomic Imaging of Solids, Shenyang, China.

J8.4 IN SITU TEM STUDIES OF UNUSUAL CRYSTAL GROWTH IN AMORPHOUS FILMS, V. Yu. Kolosov, Ural State Economic University, Ekaterinburg, Russia.

J8.5 INFRARED SPECTROSCOPY OF OXIDATION PRECURSORS ON Si(110) SURFACES, Joseph Eng Jr., Columbia University, Department of Chemistry, New York, NY; L.M. Struck, National Institutes of Standards and Technology, Gaithersburg, MD; B.E. Bent, G.W. Flynn, Columbia University, Department of Chemistry, New York, NY; Y.J. Chabal, K. Raghavachari, AT&T Bell Laboratories, Murray Hill, NJ; G.P. Williams, Brookhaven National Laboratory, Upton, NY; K. Radermacher, and S. Mantl, Institut für Schicht und Ionentechnik, Jülich, Germany.

J8.6 MICROSTRUCTURES AND STRESSES IN Mo FILMS SPUTTER-DEPOSITED ON GLASS SUBSTRATES, Tsang-Shaw Lee, Gin-Lern Gu and Bae-Heng Tseng, National Sun Yat-Sen University, Institute of Materials Science and Engineering, Taiwan, China.

J8.7 KINETIC STUDY OF THE PASSIVE FILM ON 304 STAINLESS STEEL USING A SCANNING TUNNELING MICROSCOPE, Thomas J. McKrell and James M. Galligan, University of Connecticut, Department of Metallurgy, Storrs, CT.

J8.8 IN SITU TUNNELING MICROSCOPY OF PULSED MAGNETIC FIELD INDUCED STRUCTURAL REARRANGEMENTS IN SEMICONDUCTORS, Mark N. Levin, Sergey A. Ozol, Emma A. Dolgopolova and Larisa A. Bitjutskaya, Voronezh State University, Nuclear Physics Department, Voronezh, Russia.

J8.9 INITIAL STAGE OF OXIDATION ON Si(111)-7x7 SURFACE INVESTIGATED BY SCANNING TUNNELING MICROSCOPE, Jeong Sook Ha, Kang-Ho Park, Seong-Ju Park and El-Hang Lee, ETRI, Research Department, Taejon, Korea.

J8.10 DEVELOPMENT OF A SCANNING TUNNELLING ATOM PROBE, J. Spence, U. Weierstall and W. Lo, Arizona State University, Department of Physics, Tempe, AZ.

SESSION J6: LOW ENERGY AND
REFLECTION ELECTRON MICROSCOPY
Chairs: M. Gajdardziska and E.D. Boyes
Thursday Morning, November 30
Wellesley (M)

MRS MEDAL AWARD PRESENTATION

9:00 A.M. *J6.1
Si(001) HOMOEPITAXIAL GROWTH, R.M. Tromp, W. Theis, IBM T.J. Watson Research Center, Yorktown Heights, NY; and N. Bartelt, University of Maryland, Department of Physics, College Park, MD.

9:30 A.M. J6.2
LEEM OBSERVATIONS OF SURFACE PHASE TRANSFORMATIONS FOR Co/Si(111), R.J. Phaneuf, UMCP, Department of Physics, College Park, MD; Y. Hong, S. Horch and P.A. Bennett, ASU, Department of Physics and Astronomy, Tempe, AZ.

9:45 A.M. J6.3
BROWNIAN MOTION AND COARSENING OF DOMAIN BOUNDARIES ON (7x7)-Si(111), Pita Atala, R.J. Phaneuf, N.C. Bartelt, University of Maryland, Department of Physics, College Park, MD; W. Swiech and E. Bauer, Technische Universität Clausthal, Germany.

10:00 A.M. J6.4
POTENTIAL OF ULTRA-HIGH RESOLUTION AND LOW VOLTAGE SEM FOR DYNAMIC EXPERIMENTS, Ed Boyes and Dennis L. Smith, DuPont Company, Corporate Research and Development, Wilmington, DE.

10:15 A.M. BREAK

10:45 A.M. *J6.5
REM AND TEM STUDIES OF STRUCTURES AND THIN FILM GROWTH DYNAMICS ON Si SURFACES, H. Minoda, T. Suzuki, H. Tamura, Y. Tanishiro and K. Yagi, Tokyo Institute of Technology, Department of Physics, Tokyo, Japan.


11:15 A.M. J6.6
DYNAMICS OF InP(110) SURFACE DISSOCIATION STUDIED BY UHV-REM, M.H. Malay, M. Gajdardziska-Josifovska, University of Wisconsin Milwaukee, Department of Physics, Milwaukee, WI; and David J. Smith, Arizona State University, Department of Physics, Tempe, AZ.

11:30 A.M. J6.7
THE ORIGIN OF RESONANCE PHENOMENA IN REFLECTION HIGH-ENERGY ELECTRON DIFFRACTION, Sergei L. Dudarev and Michael J. Whelan, University of Oxford, Department of Materials, Oxford, United Kingdom.

11:45 A.M. J6.8
A MACROSCOPIC MODEL FOR DESCRIPTION OF THE ATOMIC SCALE DEFORMATION, I.A. Lubashevskiy, Moscow State University, Laboratory of Sinergetics, Moscow, Russia; V.V. Gafiychuk and T.V. Odushkin, IAPMM NAS of Ukraine, Lviv, Ukraine.

SESSION J7: NANOSTRUCTURED MATERIALS
Chairs: R. Sinclair and U. Messeschmidt
Thursday Afternoon, November 30
Wellesley (M)

1:30 P.M. *J7.1
IN-SITU TEM STUDY OF CU NANOPARTICLE SINTERING, J. Murray Gibson, D. Olynick and R. Averback, University of Illinois, Physics Department, Urbana, IL.

2:00 P.M. J7.2
IN-SITU OBSERVATIONS OF ELECTROMIGRATION-INDUCED VOID DYNAMICS IN METAL INTERCONNECTS, Richard Frankovic and Gary H. Bernstein, University of Notre Dame, Department of Electrical Engineering, Notre Dame, IN.

2:15 P.M. J7.3
HIGH-RESOLUTION IN-SITU DYNAMICAL OBSERVATIONS OF DISLOCATION SEGMENT MOVEMENT AND PINNING IN SILICON, H.R. Kolar, J.C.H. Spence, Arizona State University, Center for Solid State Science, Tempe, AZ; and H. Alexander, Universität of Köln, Köln, Germany.

2:30 P.M. J7.4
IN SITU OBSERVATIONS OF DEFORMATION ASSOCIATED WITH R-PHASE IN NITI SHAPE MEMORY ALLOY, Y. Gao, R.H. Wu and Y.Q. Liu, Florida International University, Miami, FL.

2:45 P.M.

3:15 P.M. *J7.5
IN-SITU OBSERVATION OF THERMAL MECHANICAL, ELECTRICAL AND OPTICAL DEGRADATION MODES IN SEMICONDUCTOR MATERIALS AND DEVICES IN THE TRANSMISSION ELECTRON MICROSCOPE, R. Hull, E. Stach, University of Virginia, Department of Materials Science, Charlottesville, VA; J.C. Bean, D. Bahnck, AT&T Bell Laboratories, Murray Hill, NJ; and F.M. Ross, Lawrence Berkeley Laboratory, Berkeley, CA.

3:45 P.M. J7.6
IN-SITU STRAINING OF FREE-STANDING COPPER THIN FILMS IN THE TRANSMISSION ELECTRON MICROSCOPE, R.R. Keller, J.M. Phelps and D.T. Read, National Institute of Standards and Technology, Materials Reliability Division, Boulder, CO.

4:00 P.M. J7.7
IN-SITU TEM STUDIES OF RECRYSTALLIZATION GRAIN GROWTH AND DEFORMATION IN Al-Mg-X ALLOYS, John S. Vetrano, Steve M. Bruemmer, Pacific Northwest Laboratory, Richland, VA; and I.M. Robinson, University of Illinois, Department of Materials Science, Urbana, IL.

SESSION J8: POSTER SESSION
Thursday Evening, November 30
8:00 P.M.
America Ballroom (W)

J8.1 IN SITU DYNAMIC ATOMIC-LEVEL INVESTIGATION OF A WEAK CHARGE TRANSFER LAMELLAR INTERCALATION PROCESS, L. Diebolt, Arizona State University, Department of Chemistry and Biochemistry, Tempe, AZ; R. Shama, M. McKelvy, Arizona State University, Center for Solid State Science, Tempe, AZ; and W.S. Glaunsinger, Arizona State University, Department of Chemistry and Biochemistry, Tempe, AZ.

J8.2 OBSERVATION OF VACANCY CLUSTERING IN Si CRYSTALS DURING IN SITU ELECTRON IRRADIATION IN A HIGH VOLTAGE ELECTRON MICROSCOPE, L. Fedina, J. Van Landuyt, University of Antwerp, RUCA-EMAT, Antwerp, Belgium; J. Vanhellemont, IMEC, Leuven, Belgium; and A. Aseev, Institute of Semiconductor Physics, Russian Academy of Sciences, Novosibirsk, Russia.

J8.3 ELECTRONIC IRRADIATION EFFECT ON BiMoO CATALYSTS OBSERVED IN HRTEM STUDY, M. Avalos-Borja, D.H. Galván, Instituto de Física-UNAM, Lab. de Ensenada, Ensenada, Mexico; and X.G. Ning, Chinese Academy of Sciences, Institute of Metal Research, Laboratory of Atomic Imaging of Solids, Shenyang, China.

J8.4 IN SITU TEM STUDIES OF UNUSUAL CRYSTAL GROWTH IN AMORPHOUS FILMS, V. Yu. Kolosov, Ural State Economic University, Ekaterinburg, Russia.

J8.5 INFRARED SPECTROSCOPY OF OXIDATION PRECURSORS ON Si(110) SURFACES, Joseph Eng Jr., Columbia University, Department of Chemistry, New York, NY; L.M. Struck, National Institutes of Standards and Technology, Gaithersburg, MD; B.E. Bent, G.W. Flynn, Columbia University, Department of Chemistry, New York, NY; Y.J. Chabal, K. Raghavachari, AT&T Bell Laboratories, Murray Hill, NJ; G.P. Williams, Brookhaven National Laboratory, Upton, NY; K. Radermacher, and S. Mantl, Institut für Schicht und Ionentechnik, Jülich, Germany.

J8.6 MICROSTRUCTURES AND STRESSES IN Mo FILMS SPUTTER-DEPOSITED ON GLASS SUBSTRATES, Tsang-Shaw Lee, Gin-Lern Gu and Bae-Heng Tseng, National Sun Yat-Sen University, Institute of Materials Science and Engineering, Taiwan, China.

J8.7 KINETIC STUDY OF THE PASSIVE FILM ON 304 STAINLESS STEEL USING A SCANNING TUNNELING MICROSCOPE, Thomas J. McKrell and James M. Galligan, University of Connecticut, Department of Metallurgy, Storrs, CT.

J8.8 IN SITU TUNNELING MICROSCOPY OF PULSED MAGNETIC FIELD INDUCED STRUCTURAL REARRANGEMENTS IN SEMICONDUCTORS, Mark N. Levin, Sergey A. Ozol, Emma A. Dolgopolova and Larisa A. Bitjutskaya, Voronezh State University, Nuclear Physics Department, Voronezh, Russia.

J8.9 INITIAL STAGE OF OXIDATION ON Si(111)-7x7 SURFACE INVESTIGATED BY SCANNING TUNNELING MICROSCOPE, Jeong Sook Ha, Kang-Ho Park, Seong-Ju Park and El-Hang Lee, ETRI, Research Department, Taejon, Korea.

J8.10 DEVELOPMENT OF A SCANNING TUNNELLING ATOM PROBE, J. Spence, U. Weierstall and W. Lo, Arizona State University, Department of Physics, Tempe, AZ.





The following exhibitors have identified their products and services as directly related to your research:

Products and Services

A&N Corporation
Allied High Tech Products, Inc.
Cryomech, Inc.
Digital Instruments
Duniway Stockroom Corporation
FEI Company
E.A. Fischione Instruments, Inc.
Harris Diamond Corporation
Hitachi Scientific Instruments
Huntington Mechanical Laboratories
IBM Analytical Services
k-Space Associates, Inc.
Omicron Associates
Park Scientific Instruments
Philips Electronic Instruments Co.
Philips Semiconductors/Materials Analysis Group
Plasma Sciences, Inc.
Plasmaterials, Inc.
Princeton Gamma-Tech, Inc.
Princeton Research Instruments
RJ Lee Instruments, Ltd.
Staib Instruments, Inc.
Structure Probe, Inc./SPI Supplies
TexSEM Laboratories, Inc.
VAT, Inc.
Virginia Semiconductor, Inc.

See page 6 for a list of companies exhibiting books and software and a complete list of exhibitors.