Meetings & Events

1995 MRS Fall Meeting

November 27 - December 1, 1995
Boston, Massachusetts
Meeting Chairs: Michael J. Aziz, Berend T. Jonker, Leslie J. Struble

Symposium A—Ion-Solid Interactions For Materials Modification And Processing

Chairs

Daryush Ila, Alabama A&M University
David B. Poker, Oak Ridge National Laboratory
Lloyd R. Harriott, AT&T Bell Laboratories
Yang-Tse Cheng, General Motors Corporation
Thomas W. Sigmon, Arizona State University

Symposium Support

  • National Electrostatics Corporation
  • Alabama A&M University, Center for Irradiation of Materials
  • AT&T Laboratories
  • General Motors Corporation
  • Oak Ridge National Laboratory

*Invited Paper

SESSION A1: FUNDAMENTALS OF ION SOLID INTERACTIONS
Chair: David B. Poker
Monday Morning, November 27
Salon E (M)


8:30 A.M. *A1.1
COMPUTER SIMULATIONS OF THE INTERACTIONS OF ENERGETIC PARTICLES AND CLUSTERS WITH SURFACES, R.S. Averback, M. Ghaly, H. Zhu, University of Illinois at Urbana-Champaign, Department of Materials Science and Engineering, Urbana, IL; and T. Diaz de la Rubia, Lawrence Livermore National Laboratory, Livermore, CA.

9:00 A.M. *A1.2
MOLECULAR DYNAMICS STUDY OF THERMODYNAMIC EFFECTS IN LOW-ENERGY ION-INDUCED INTERFACE MIXING, J.A. Sprague, US Naval Research Laboratory, Washington, DC; and C.M. Gilmore, The George Washington University, and US Naval Research Laboratory, Washington, DC.

9:30 A.M. A1.3
STABILITY OF IRRADIATION INDUCED DEFECTS IN NANOSTRUCTRUED MATERIALS, M. Rose, A.G. Balogh and H. Hahn, Technical University Darmstadt, Department of Materials Science, Darmstadt, Germany.

9:45 A.M. A1.4
THE INFLUENCE OF THE "PLUS-ONE" STATE ON ION-INDUCED DAMAGE IN Si(100), O.W. Holland, Oak Ridge National Laboratory, Oak Ridge, TN; and Bent Nielsen, Brookhaven National Laboratory, Upton, NY.

10:00 A.M. BREAK

SESSION A2: ION BEAM MIXING
Chairs: Yang-Tse Cheng and Thomas DeLa Rubia
Monday Morning, November 27
Salon E (M)

10:30 A.M. *A2.1
ROLE OF INTERFACE IN ION MIXING/THERMAL ANNEALING INDUCED AMORPHIZATION IN MULTILAYERS IN SOME IMMISCIBLE METAL SYSTEMS, B.X. Liu, Z.H. Zhang, O. Jin and F. Pan, Tsinghua University, Department of Materials Science and Engineering, Beijing, China.

11:00 A.M. *A2.2
ION BEAM MIXING IN INSULATOR SUBSTRATES, Carl J. McHargue, University of Tennessee, Center for Materials Processing, Knoxville, TN.

11:30 A.M. A2.3
MeV CLUSTER IRRADIATIONS: ENHANCED SPUTTERING AND ION BEAM MIXING OF MULTILAYERS DUE TO ELECTRONIC ENERGY DEPOSITION, N. Layadi, H. Bernas, J. Chaumont, F. Garrido, F. Dupuis and L. Dumoulin, CSNSM-CNRS, Orsay Campus, France.

11:45 A.M. A2.4
ATOMIC SCALE ENHANCEMENT OF THE ADHESION OF BERYLLIUM FILMS TO CARBON SUBSTRATES, R.G. Musket and G.R. Wirtenson, Lawrence Livermore National Laboratory, Materials Science and Technology Division, Livermore, CA.


Session A1: Fundamentals of Ion Solid Interactions and A2: Ion Beam Mixing posters are included in this evening's poster session.

SESSION A3: RADIATION DAMAGE
Chair: Yang-Tse Cheng
Monday Afternoon, November 27
Salon E (M)

1:30 P.M. *A3.1
DAMAGE IN REFRACTORY OXIDES AND ION BEAM MIXING AT METAL-OXIDE INTERFACES INDUCED BY GEV IONS AND 20 MEV CLUSTER BEAMS, P. Thevenard, M. Beranger, R. Brenier, B. Canut and S.M.M. Ramos, Université Claude Bernard, Département de Physique des Matériaux, Villeurbanne, France.

2:00 P.M. A3.2
CANTILEVER BEAM STRESS MEASUREMENTS DURING ION IRRADIATION, A.I. Van Sambeek, L. Wang and R.S. Averbeack, University of Illinois at Urban-Champaign, Department of Materials Science and Engineering, Urbana, IL.

2:15 P.M. A3.3
SOUND WAVES IN SILICON INDUCED BY ION AND CLUSTER IMPACT, D. Stock, Universität Jena, Institut für Festkörperphysik, Jena, Germany; and K.H. Heinig, FZ Rossendorf, Institut für Ionenstrahlphysik and Materialforschung, Dresden, Germany.

2:30 P.M. A3.4
SPUTTER ROUGHENING INSTABILITY ON THE GE (001) SURFACE: ENERGY AND FLUX DEPENDENCE, E. Chason, B.K. Kellerman and T.M. Mayer, Sandia National Laboratories, Albuquerque, NM.

2:45 P.M. A3.5
LATERAL SPUTTERING BY GAS CLUSTER ION BEAMS AND ITS APPLICATIONS TO ATOMIC LEVEL SURFACE MODIFICATION, Isao Yamada and Jiro Matsuo, Ion Beam Engineering Experimental Laboratory Kyoto University, Kyoto, Japan.

3:00 P.M. BREAK

SESSION A4: INSULATORS AND
WIDE BANDGAP MATERIALS
Chair: David B. Poker
Monday Afternoon, November 27
Salon E (M)

3:30 P.M. *A4.1
CHARACTERIZATIONS AND GROWTH PROCESSES OF BN FILMS GROWN BY ION-ASSISTED PULSED LASER DEPOSITION, G.L. Doll, Physics Department, GM Research and Development Center, Warren, MI; D.C. Chance, Physics Department, Wayne State University, Detroit, MI; A.K. Ballal and L. Salamanca-Riba, Department of Materials Science and Engineering, University of Maryland, College Park, MD.

4:00 P.M. *A4.2
STRESS EFFECTS IN SPUTTER-DEPOSITED GROUP-III NITRIDE THIN FILMS, W.J. Meng, General Motors Research and Development Center, Warren, MI.

4:30 P.M. A4.3
CROSS-SECTIONAL RAMAN SCATTERING FROM MeV IN IMPLANTED DIAMOND, S.Prawer, D.N. Jamieson and K.W. Nugent, University of Melbourne, School of Physics, Victoria, Australia.

4:45 P.M. A4.4
FORMATION OF VANADIUM OXIDE COMPOUNDS IN SEVERAL OXIDE SUBSTRATES IMPLANTED WITH VANADIUM AND ANNEALED, L.A. Gea, L.A. Boatner, J.D. Budai and R.A. Zuhr, Oak Ridge National Laboratory, Solid State Division, Oak Ridge, TN.

Session A3: Radiation Damange and A4: Insulators and Wide Bandgap Materials posters are included in this evening's poster session.

POSTER SESSION
Chairs: Y-T. Cheng, L. Harriott, D. Ila,
D. Poker and T. Sigmon
Monday Evening, November 27
8:00 P.M.
America Ballroom (W)


SESSION A1: FUNDAMENTALS OF ION SOLID INTERACTIONS

A1.5 DEVELOPING AN EMIPIRICAL POTENTIAL FOR SILICON FROM AB-INITIO FORCE DATA, David F. Richards, James B. Adams, University of Illinois at Urbana-Champaign, Department of Materials Science and Engineering, Urbana, IL; and Jing Zhu, Lawrence Livermore National Laboratory, Livermore, CA.


A1.6 AB INITIO PSEUDOPOTENTIAL CALCULATIONS FOR BORON AND CARBON IMPURITIES IN CRYSTALLINE SILICON, Jing Zhu, Lawrence Livermore National Laboratory, Physics Dept., Livermore, CA.

A1.7 MOLECULAR DYNAMICS SIMULATIONS OF ALUMINUM SPUTTERING UNDER CONDITIONS FOR SILICON DEVICE PROCESSING, G.H. Gilmer, J.E. Rubio, M. Jaraiz, F.H. Baumann, AT&T Bell Laboratories, Murray Hill, NJ; and T. Diaz de la Rubia, Lawrence Livermore National Laboratory, Livermore, CA.

A1.8 DEPENDENCE ON COLLISION TIME OF THE EJECTION BEHAVIOR OF THE PARTICLES SPUTTERED FROM SINGLE-CRYSTAL SURFACES, Che-Che Chang, National Taiwan University, Department of Chemistry, Taipei, Taiwan.

A1.9 ANOMALOUSLY HIGH ENERGY COST TO SPUTTER AN ATOM >FROM SOLID SURFACES: COMPUTER SIMULATION AND ANALYTIC MODEL STUDY FOR SINGLE-COMPONENT AND TWO-COMPONENT TARGETS, Valdimir N. Samoilov and Olga S. Korsakova, Moscow State University, Physics Department, Moscow, Russia.

A1.10 DEVELOPMENT AND DEMONSTRATION OF A TWO-DIMENSIONAL, ACCURATE AND COMPUTATIONALLY-EFFICIENT MODEL OF BORON IMPLANTATION INTO SINGLE-CRYSTAL SILICON THROUGH OVERLYING OXIDE LAYERS, S. Morris, D. Lim, S.-H. Yang, S. Tian, K. Parab and A.F. Tasch, University of Texas at Austin, Austin, TX.

A1.11 TIGHT-BINDING MOLECULAR DYNAMICS SIMULATIONS ON POINT DEFECTS DIFFUSION AND INTERACTIONS IN CRYSTALLINE SILICON, L. Colombo, University of Milano, Department of Physics, Milano, Italy; and T. Diaz De La Rubia, Lawrence Livermore National Laboratory, Livermore, CA.

A1.12 A MOLECULAR DYNAMICS SIMULATION STUDY OF DEFECT PRODUCTION IN VANADIUM, K. Morishita and T. Diaz de la Rubia, Lawrence Livermore National Laboratory, Livermore, CA.

A1.13 ATOMIC SCALE SIMULATIONS OF ARSENIC ION IMPLANTATION AND ANNEALING IN SILICON, M.-J. Caturla, H. Huang, T. Diaz de la Rubia, Lawrence Livermore National Laboratory, Livermore, CA; M. Jaraiz and G.H. Gilmer, AT&T Bell Laboratories, Murray Hill, NJ.

A1.14 DEPTH PROFILES OF MEDIUM ENERGY PHOSPHORUS IMPLANTS INTO SILICON, J.P. Lavine, L.Zheng, P.M. Whalen and L.S. Hung, Eastman Kodak Company, Rochester, NY.

A1.15 TOUGHENING OF THIN FILMS BY ION BEAMS, Amitabh Jain, Indian Institute of Technology, New Delhi, India.

A1.16 IN-SITU HVEM STUDIES OF RADIATION-INDUCED SEGREGATION IN Ni-Al ALLOYS DURING SIMULTANEOUS IRRADIATION WITH ELECTRONS AND HEAVY IONS, M.J. Giacobbe, Argonne National Laboratory, Materials Science Division, Argonne, IL, and University of Illinois at Urbana-Champaign, Urbana, IL; N.Q. Lam, P.R. Okamoto, Argonne National Laboratory, Materials Science Division, Argonne, IL; and J.F. Stubbins, University of Illinois at Urbana-Champaign, Department of Nuclear Engineering, Urbana, IL.

A1.17 THE IONIZATION DEGREE OF Ar ATOMS SINGLE SCATTERED FROM PURE METAL AND ALLOY SURFACES, Faridon B. Abdukasimov, Tashkent State University, Department of Physical Electronics, Tashkent, Uzbekistan; and Vladimir Kh. Ferleger, Arifov Institute of Electronics, Tashkent, Uzbekistan.

A1.18 TRANSMISSION OF LOW ENERGY (<5 eV) F+ AND F- IONS THROUGH CONDENSED WATER OVERLAYERS, M. Akbulut, N.J. Sack and T.E. Madey, Rutgers University, Department of Physics/Astronomy and Laboratory for Surface Modification, Piscataway, NJ.

A1.19 INELASTIC PROCESSES AT THE LOW ENERGY IONS INTERACTION WITH THE INSULATOR SURFACE, Vladimir G. Babaev, Malvina B. Guseva, Valery V. Khvostov and Olga Yu. Sokol, Moscow State University, Physics Department, Moscow, Russia.

SESSION A2: ION BEAM MIXING

A2.5 SEARCH FOR ION BEAM INDUCED MIXING IN CERAMIC-CERAMIC SYSTEMS, Karur R. Padmanabhan, Wayne State University, Department of Physics, Detroit, MI.

A2.6 PROPERTIES OF Cu/Al2O3 INTERFACES AFTER ION IRRADIATION, K. Neubeck, H. Hahn, A.G. Balogh, Technical University Darmstadt, Department of Materials Science, Darmstadt, Germany; D.M. Rück, Institute of Heavy Ion Research (GSI), Darmstadt, Germany; and H. Baumann, University Frankfurt, Institute of Nuclear Physics, Frankfurt, Germany.

A2.7 ION BEAM MIXING AT Ni/Al2O3 AND Cr/Al2O3 INTERFACES, F.L. Freire Jr., Pontifícia Universidade Católica do Rio de Janeiro, Departamento de Física, Rio de Janeiro, Brazil.


A2.8 STUDY OF METASTABLE ALLOY FORMATION IN AN IMMISCIBLE Y-Zr SYSTEM BY ION MIXING/THERMAL ANNEALING, Z.J. Zhang and B.X. Liu, Tsinghua University, Department of Materials Science and Engineering, Beijing, China.

A2.9 THE EVOLUTION OF INTERFACIAL ROUGHNESS IN MeV ION-IRRADIATED Cu(111)/Nb(POLYCRYSTALLINE) THIN FILMS BY CRYSTAL TRUNCATION ROD ANALYSIS, P.J. Partyka, R.S. Averback, D. Fanning, I.K. Robinson, Y. Lee, P. Flynn, University of Illinois, Materials Research Laboratory, Urbana, IL; and P. Bellon, SRMP, Centre D'Etudes de Saclay, Gif-sur-Yvette, France.

A2.10 IRRADIATION MIXING OF Al INTO URANIUM SILICIDES, R.C. Birtcher, F.-R. Ding, B.J. Kestel and P.M. Baldo, Argonne National Laboratory, Materials Science Division, Argonne, IL.

A2.11 ION MIXING IN FILM-SUBSTRATE SYSTEMS IRRADIATED BY POLYENERGETIC Ar ION BEAM, Boris A. Kalin, Nikolai V. Volkov, Sergei E. Sabo, Vladimir P. Gladkov and Irina H. Atalikova, Moscow State Engineering Physics Institute, Kashirskoe, Russia.

A2.12 MODIFICATION OF THE STRUCTURE-PHASE STATE OF COATINGS BY ION IMPLANTATION TECHINQUES, A.D. Korotaev, A.N. Tyumentsev, Yu.P. Pinzhin, A.F. Safarov, Siberian Physical and Technical Institute, Tomsk, Russia; S.P. Bugaev, P.M. Shanin, N.N. Koval, G.Yu. Yushkov and A.V. Vizir, High-Current Electronics Institute, Tomsk, Russia.

A2.13 NITROGEN MIGRATION AND NITRIDE FORMATION IN METALLIC BI-LAYERS, D.O. Boerma, University of Groningen, Materials Science Centre, Goningen, Netherlands; D.K. Inia, A.M. Vredenberg and W.M. Amoldbik, Debye Institute, University of Utrecht, Utrecht, Netherlands.

SESSION A3: RADIATION DAMAGE

A3.6 CHEMISTRY INDUCED BY MeV ENERGY ION IMPACTS WITH SOLID MATERIALS, W. Ricky Ferrell, Shera von Heimburg, Michael Van Stipdonk, and Emile A. Schweikert, Texas A&M University, Center for Chemical Characterization and Analysis, College Station, TX.

A3.7 GROWTH OF VACANCY CLUSTERS DURING POST-IRRADIATION ANNEALING OF ION IMPLANTED SILICON, A. van Veen, H. Schut, A. Rivera and A.V. Federov, IRI Delft, University of Technology, Delft, Netherlands.

A3.8 IN SITU ION BEAM ANALYSIS OF RADIATION DAMAGE KINETICS IN MgTiO3 SINGLE CRYSTALS AT 170-470deg.K, Ning Yu, Jeremy N. Mitchell, Kurt E. Sickafus and Michael Nastasi, Los Alamos National Laboratory, Materials Science and Technology Division, Los Alamos, NM.

A3.9 EFFECTS OF ARSENIC DEACTIVATION ON ARSENIC IMPLANT ENHANCED DIFFUSION, Omer Dokumaci, Mark Law, University of Florida, Department of Electrical Engineering, Gainesville, FL; Kevin S. Jones and Viswanath Krishnamoorthy, University of Florida, Department of Materials Science and Engineering, Gainesville, FL.

A3.10 MATERIALS MODIFICATION BY LOW-ENERGY ION IRRADIATION, I.V. Tereshko, V.I. Khodyrev, E.A. Lipsky, A.V. Gonoharenya, Mechanical Engineering Institute, Mogilev, Belarus; and V.M. Tereshko, Moscow State University, Moscow, Russia.

A3.11 A COMPARATIVE STUDY OF RADIATION DAMAGE IN Al2O3,FeTiO3, AND MgTiO3, Jeremy N. Mitchell, Ning Yu, Kurt E. Sickafus, Michael Nastasi, Thomas N. Taylor, Kenneth J. McClellan, Los Alamos National Laboratory, Materials Science and Technology Division, Los Alamos, NM; and Gordon L. Nord, U.S.G.S., Reston, VA.

A3.12 EFFECT OF CASCADE REMNANTS ON FREELY MIGRATING DEFECTS IN Cu-1%Au ALLOYS, A. Iwase, Argonne National Laboratory, Department of Materials Science Division, Argonne, IL; and Japan Atomic Energy Research Institute, Ibaraki, Japan; L.E. Rehn, P.M. Baldo and L. Funk, Argonne National Laboratory, Department of Materials Science Division, Argonne, IL.

A3.13 INTERACTION OF ALPHA PARTICLE BEAMS WITH Fe-BASED AND FeNi-BASED GLASSY FERROMAGNETS, M. Sorescu, Duquesne University, Pittsburgh, PA; and D. Barb, Institute of Atomic Physics, Bucharest, Romania.

A3.14 TEMPERATURE AND ENERGY DEPENDENCE OF CHANNELED ION ASSISTED EPITAXIAL GROWTH OF GE ON THIN Si SUBSTRATES, Kazuo Saitoh, Setsuo Nakao, Hiroaki Niwa, Yoshiko Miyagawa and Soji Miyagawa, National Industrial Research, Institute of Nagoya, Nagoya, Japan.

A3.15 EFFECTS OF HIGH ENERGY ION IRRADIATION ON CRYSTALLIZATION OF AMORPHOUS GERMANIUM FILMS DEPOSITED ON CALCIUM FLUORIDE SUBSTRATE, Setsuo Nakao, Kazuo Saitoh, Masami Ikeyama, Hiroaki Niwa, Seita Tanemura, Yoshiko Miyagawa and Soji Miyagawa, National Industrial Research, Institute of Nagoya, Nagoya, Japan.


A3.16 EFFECTS OF ION BEAM IRRADIATION ON THE CRYSTALLIZATION OF COPPER FILMS, Shunichi Hishita, Keiji Oyoshi, Shigeru Shuehara and Takashi Aizawa, National Institute for Research in Inorganic Materials, Ibaraki, Japan.

A3.17 IS ION BEAM INDUCED EPITAXIAL CRYSTALLIZATION OF Si A ROUGHNESS-LIMITED GROWTH PROCESS? F. Fortuna, H. Bernas and P. Nédellec, CSNSM-CNRS, Orsay Campus, France.

A3.18 MOLECULAR DYNAMICS STUDIES OF THE ION BEAM INDUCED CRYSTALLIZATION IN SILICON, L.A. Marques, M.-J. Caturla, H. Huang and T. Diaz de la Rubia, Lawrence Livermore National Laboratory, Chemistry and Materials Science Department, Livermore, CA.

A3.19 GROWTH PROPERTIES OF Si1-xSnx LAYERS ON Si BY ION-BEAM-INDUCED EPITAXIAL CRYSTALLIZATION (IBIEC) AND SOLID PHASE EPITAXIAL GROWTH (SPEG), Naoto Kobayashi, Masataka Hasegawa and Nobuyuki Hayashi, Electrotechnical Laboratory, Quantum Radiation Division, Ibaraki, Japan.

SESSION A4: INSULATORS AND WIDE BANDGAP MATERIALS

A4.5 DIELECTRIC DIAMOND-LIKE CARBON FILMS BY A LARGE AREA INDUCTIVE ION SOURCE, Richard L.C. Wu, William Lanter, K Systems Corporation, Engineering and Scientific Department, Beavercreek, OH; Sandra Carr, Joseph Weimer, Wright Laboratory, Wright Patterson AFB, OH; and Peter Kosel, University of Cincinnati, Department of Electrical Engineering, Cincinnati, OH.

A4.6 DIAMONDLIKE CARBON, SiC AND SixOyNZ FILMS PRODUCED DIRECTLY FROM ION BEAMS, K.L. Enisherlova, Y.A. Kontsevoi, E.N. Chervyakova, SRI "Pulsar", Moscow, Russia; E.A. Mitrofanov and Y.P. Maishev, SRI of Vacuum Technology, Moscow, Russia.

A4.7 STUDY OF DIAMOND NUCLEATION ON SILICON USING DIRECT NEGATIVE CARBON ION BEAM SOURCE, Y.W. Ko, Y.O. Ahn, M.H. Shon, Y.S. Park Stevens Institute of Technology, Department of Physics and Engineering Physics, Hoboken, NJ; and S.I. Kim, SKION Corporation, Hoboken, NJ.

A4.8 STRUCTURAL DISORDER IN HARD AMORPHOUS CARBON FILMS IMPLANTED WITH NITROGEN IONS, F.L. Freire Jr., D.F. Franceschini, Pontifícia Universidade Católica do Rio de Janeiro, Departamento de Física, Rio de Janeiro, Brazil; C.A. Achete, PEMM-COPPE/UFRJ, Rio de Janeiro, Brazil; G. Mariotto, R. Brusa, G. Karwasz, Università di Trento, Dipartimento di Fisica, Povo, Italy; and R. Canteri, Centro Materiali e Biofisica Medica, Italy.

A4.9 MeV ION IRRADIATION EFFECTS ON DIAMOND FILMS, Priyadarshini Kurve, S.B. Ogale, University of Pune, Department of Physics, Pune, India; A. Bhagwat, D.K. Awasthi, N.S.C., New Delhi, India; and P. Ayuub, T.I.F.R., Bombay, India.

A4.10 SCANNING TUNNELING MICROSCOPY AND ATOMIC FORCE MICROSCOPY OF Au IMPLANTED IN HIGHLY ORDERED PYROLITIC GRAPHITE, Y.S. Tung, A. Ueda, D.O. Henderson, R. Mu, Fisk University, Department of Physics, Nashville, TN; C.W. White, R.A. Zuhr and Jane G. Zhu, Oak Ridge National Laboratory, Solid State Division, Oak Ridge, TN.

A4.11 ENHANCED DIFFUSION OF HIGH-TEMPERATURE IMPLANTED ALUMINUM IN SILICON CARBIDE, Alexander V. Suvorov, Cree Research Inc., Durham, NC; Igor O. Usov, Victor V. Sokolov and Alexandra A. Suvorova, Russian Academy of Sciences, Ioffe Physical Technical Institute, St. Petersburg, Russia.

A4.12 MeV ION BEAM SYNTHESIS OF WELL-DEFINED BURIED 3C-SiC LAYERS IN SILICON, Jörg K.N. Lindner, Bärbel Götz, Andreas Frohnwieser and Bernd Stritzker, Universität Augsburg, Institut für Physik, Augsburg, Germany.

A4.13 DAMAGE AND RECOVERY OF ION IMPLANTED SILICON CARBIDE, P. Musumeci, M.G. Grimaldi, L. Calcagno and G. Foti, Catania University, Physics Department, Catania, Italy.

A4.14 MODIFICATION OF MAGNETRON SPUTTERED a-Si1-xCx:H FILMS BY IMPLANTATION OF Sn+, N. Tzenov, D. Dimova-Malinovska, Central Laboratory for Solar Energy and New Energy Sources, Sofia, Bulgaria; and T. Tsvetkova, Institute of Solid State Physics, Bulgarian Academy of Sciences, Sofia, Bulgaria.

A4.15 INFLUENCE OF OXYGEN UPON SiC BURIED LAYER ION BEAM SYNTHESIS PROCESSES IN SILICON, Boris N. Romanyuk, Vladimir G. Litovchenko, Valentin G. Popov, Nickolai I. Klyui, Victor P. Melnik, ISP, Kiev, Ukraine; and Dietmar Kruger, ISP, Frankfurt/Oder, Germany.

A4.16 FORMATION OF ULTRA-THIN OXYNITRIDE FILMS BY LOW ENERGY NITROGEN IMPLANTATION, J.A. Diniz, P.J. Tatsch, UNICAMP, DSIF/FEE, Campinas, Brazil; L.C. Kretly, J.E.C. Queiroz and J. Godoy, UNICAMP, CCS, Campinas, Brazil.
A4.17 ROLE OF ALUMINUM IMPLANTATION IN IMPROVING THE CORROSION RESISTANCE OF HIGH PURITY SILICON NITRIDE, Y.S. Cheong, H. Du, Stevens Institute of Technology, Department of Materials Science, Hoboken, NJ; and Stephen P. Withrow, Oak Ridge National Laboratory, Oak Ridge, TN.

A4.18 CARBON NITRIDE (CNx) FILMS FORMED BY PLASMA ION IMPLANTATION AND ION BEAM IMPLANTATION INTO CARBON THIN FILMS, Imad F. Husein, YuanZhong Zhou, Fan Li, Ryne C. Allen, Chung Chan, Northeastern University, Boston, MA; Ka-Ngo Leung, Lawrence Berkeley Laboratory, Berkeley, CA; Jacob I. Kleiman and Yu Gudimenko, Integrity Testing Laboratory, Ontario, Canada.

A4.19 SURFACE MODIFICATION OF Al2O3 AND Si3N4 BY 1keV Ar+ ION IRRADIATION IN N2 ENVIRONMENT, Jig-Sang Gam, Kyung-Sup Han, Won-Kook Choi, Hyung-Jin Jung and Seok-Keun Koh, Korea Institute of Science and Technology, Division of Ceramics, Seoul, Korea.

A4.20 A NOVEL ETCHING METHOD OF SINGLE CRYSTALLINE Al2O3 FILM ON Si AND SAPPHIRE USING Si ION IMPLANTATION, M. Ishida, K. Kim, T. Kimura and T. Nakamura, Toyohashi University of Technology, Toyohashi, Japan.

A4.21 LOW ENERGY ION IMPLANTATION INTO YBCO THIN FILMS, J.R. Liu, J.Z. Qu, X.T. Cui, O. Chen and W.K. Chu, University of Houston, Texas Center for Superconductivity, Houston, TX.

A4.22 ION CHANNELING STUDIES IN YBCO THIN FILM AT LOW TEMPERATURE, Xingtian Cui, Z. Zhang, Quark Chen, J.R. Liu, R.P. Sharma and W.K. Chu, University of Houston, Texas Center for Superconductivity, Houston, TX.

A4.23 ION INDUCED DAMAGE AND ANNEALING OF LiTaO3 SINGLE CRYSTAL, Z.H. Zhang, Rambis Chu, X.T. Cui and W.K. Chu, University of Houston, Texas Center for Superconductivity, Houston, TX.

A4.24 ANNEALING STUDIES OF ION IMPLANTED KTaO3, J. Rankin, Brown University, Division of Engineering, Providence, RI; L. Gea and L.A. Boatner, Oak Ridge National Laboratory, Oak Ridge, TN.

A4.25 BOMBARDING EFFECTS OF GAS CLUSTER ION BEAMS ON SAPPHIRE SURFACE; CHARACTERISTICS OF MODIFIED LAYERS AND THEIR MECHANICAL AND OPTICAL PROPERTIES, Jiro Matsuo and Isao Yamada, Kyoto University, Ion Beam Engineering Experimental Laboratory, Kyoto, Japan.

A4.26 THE PECULIARITIES OF QUARTZ FROM GOLD-BEARING DEPOSIT, Petro I, Didenko, Department of Metallogeny Institute of Geochemistry Mineralogy and Ore Formation National Academy of Sciences, Kieiv, Ukraine.

A4.27 ION BEAM MODIFICATION OF MAGNESIUM ALUMINIUM SPINEL, V.T. Gritsina, N.A. Kasatkina and V.F. Pershin, Kharkov University, Department of Physics and Technology, Kharkov, Ukraine.

A4.28 AMORPHIZATION OF SPINEL BY Xe ION IRRADIATION, Kurt E. Sickafus and Ning Yu, Los Alamos National Laboratory, Materials Science and Technology Division, Los Alamos, NM.

A4.29 THE ELASTIC MODULUS AND STRUCTURE OF SPINEL IRRADIATED WITH 400 keV Xe IONS, Ram Devanathan, Ning Yu, Kurt E. Sickafus and Michael Nastasi, Los Alamos National Laboratory, Materials Science and Technology Division, Los Alamos, NM.

A4.30 DEPOSITION OF LEAD-SILICATE GLASSY THIN COATINGS BY RF MAGNETRON SPUTTERING: CORRELATION BETWEEN DEPOSITION PARAMETERS AND ELECTRICAL AND STRUCTURAL PROPERTIES, Valentino Rigato, Gianluigi Maggioni and Gianantonio Della Mea, INFN Laboratori Nazionali Legnaro, Legnaro, Italy.

SESSION A5: POLYMERS
Chair: Daryush Ila
Tuesday Morning, November 28
Salon E (M)
9:00 A.M. *A5.1
SURFACE OPTICAL PROPERTY MODIFICATION OF POLYMERS BY ION BEAM IRRADIATION, Brian G. hoover, Chase K. McMichael, Jia Rui Liu and Wei-Kan Chu, University of Houston, Texas Center for Superconductivity, Houston, TX.

9:30 A.M. A5.2
MODIFICATION OF WETTING PROPERTY OF PLEXIGLAS AND CARBON BY MEANS OF ION BEAM IMPLANTATION: APPLICATION TO FLUID MANAGEMENT AND MATERIALS PROCESSING IN MICROGRAVITY, J.-F. Pageau, G.G. Ross, E. Couture, A. Poirier and F. Quirion, INRS-Energie et Matériaux, Varennes, Canada.

9:45 A.M. A5.3
VERSATILE APPLICATIONS OF ION IMPLANTED POLYMERS, R.E. Giedd, Y.Q. Wang, Southwest Missouri State University, Department of Physics and Astronomy, Springfield, MO; M.G. Moss and J. Kaufmann, Brewer Science Inc., Rolla, MO.


10:00 A.M. BREAK

10:30 A.M. A5.4
PROTON MODIFICATION OF ULTRA HIGH MOLECULAR WEIGHT POLYETHYLENE TO PROMOTE CROSSLINKING FOR ENHANCED CHEMICAL AND PHYSICAL PROPERTIES, J.F. Wilson, J.R. Liu and W.K. Chu, University of Houston, Texas Center for Superconductivity, Houston, TX.

10:45 A.M. A5.5
EFFECTS OF ION IMPLANTATION ON STRUCTURE AND COMPOSITION OF POLYETHYLENE AND POLYCARBONATE, R. Öchsner, Fraunhofer-Institut für Integrierte Schaltungen, Enlangen, Germany; J. Gyulai, Fraunhofer-Institut für Integrierte Schaltungen, Enlangen, Germany, and KFKI Research Institute for Materials Science, Budapest, Hungary; S. Bogen, Fraunhofer-Institut für Integrierte Schaltungen, Enlangen, Germany; H. Ryssel, Fraunhofer-Institut für Integrierte Schaltungen, Enlangen, Germany, and Universität Erlangen, Erlangen, Germany; L. Pfitzner, Fraunhofer-Institut für Integrierte Schaltungen, Enlangen, Germany; V. Svorcik, Institute of Chemical Technology, Department of Solid State Engineering, Prague, Czech Republic; and F. Pàszti, KFKI Research Institute for Particle and Nuclear Physics, Budapest, Hungary.

11:00 A.M. A5.6
IMPROVED THERMAL STABILITY OF ION IRRADIATED AZ-1350 PHOTORESIST, F.C. Zawislak and J.R. Kaschny, Instituto de Fisica, UFRGS, Porto Alegre, Brazil.

11:30 A.M. A5.7
STRUCTURING OF CONDUCTING POLYMERS BY ION IMPLANTATION, S. Schiestel, G.K. Wolf, University Heidelberg, Physical Chemical Institute, Heidelberg, Germany; and K. Edinger, University of Maryland, Department of Electrical Engineering, College Park, MD.

11:45 A.M. A5.8
ION BEAM MODIFICATION OF PVDC AND PE POLYMERS, A.L. Evelyn, D. Ila, J. Fisher, Alabama A&M University, Center for Irradiation of Materials, Normal AL; and D.B. Poker, Oak Ridge National Laboratory, Solid State Division, Oak Ridge, TN.

Session A5: Polymers posters are included in this evening's poster session.

SESSION A6: OPTICAL MATERIALS
Chair: David B. Poker
Tuesday Afternoon, November 28
Salon E (M)

1:30 P.M. *A6.1
ION - IMPLANTED ELECTROOPTICAL MATERIALS, Ch. Buchal, L. Beckers, KFA, Institue f. Schict- und Ionentechnik, Jülich, Germany; D. Fluck and P. Gunter, ETH, Institut für Quantenelektronick, Zürich, Switzerland.

2:00 P.M. A6.2
STRUCTURAL AND OPTICAL PROPERTIES OF RARE-EARTH DOPED LITHIUM NIOBATE WAVEGUIDES FORMED BY MEV HELIUM IMPLANTATION, B. Herreros, G. Lifante, Universidad Autónoma de Madrid, Departamento de Física de Materiales, Madrid, Spain; A. Kling, J.C. Soares, Centro de Física Nuclear da Universidade de Lisboa, Lisboa, Portugal; and M.F. Da Silva, ITN, Departamento de Física, Sacavém, Portugal.

2:15 P.M. A6.3
LOSS MEASUREMENTS OF STOICHIOMETRIC Ti AND O IMPLANTED LiNbO3 CHANNEL WAVEGUIDES, E.K. Williams, D. Ila, Alabama A&M University, Center for Irradiation of Materials, Normal, AL; S. Sarkisov, P. Venkateswarlu, Alabama A&M University, Center for Nonlinear Optics, Normal, AL; D.B. Poker, Oak Ridge National Laboratory, Solid State Division, Oak Ridge, TN; and P.R. Ashley, U.S. Army MICOM, MSFC, AL.

2:30 P.M. A6.4
DEFECT CREATION BY ELECTRONIC PROCESSES IN MgO BOMBARDED WITH GeV HEAVY IONS, M. Beranger, P. Thevenard, R. Brenier, Unisersité Claude Bernard, Département de Physique des Matériaux, Villeurbanne Cedex, France; and E. Balanzat, Centre Interdisciplinaire de Recherches avec les lons Lourds, Caen, France.

2:45 P.M. A6.5
MeV ION BEAM INDUCED INDEX OF REFRACTION CHANGE IN LAYERED GaAs/AlGaAs, T. Taylor, D. Ila, Alabama A&M University, Center for Irradiation of Materials, Normal, AL; P.R. Ashley, U.S. Army Missile Command, Weapons Sciences Directorate, Research, Development and Engineering Center, Arsenal, AL; and D.B. Poker, Oak Ridge National Laboratory, Solid State Division, Oak Ridge, TN.

3:00 P.M. BREAK 3:30 P.M. *A6.6
SYNTHESIS AND PROPERTIES OF NANOCRYSTALS AND QUANTUM DOTS FORMED IN INSULATORS BY ION IMPLANTATION, C.W. White, Oak Ridge National Laboratory, Oak Ridge, TN.

4:00 P.M. A6.7
SILVER CLUSTER FORMATION IN IMPLANTED Al2O3 SINGLE CRYSTALS, F.L. Freire Jr., Pontifícia Universidade Católica do Rio de Janeiro, Departamento de Física, Rio de Janeiro, Brazil; G. Mariotto and N. Broll, Università di Trento, Dipartimento di Fisica, Povo, Italy.

4:15 P.M. A6.8
OPTICAL PROPERTIES OF MULTICOMPONENT ANTIMONY AND SILVER NANOCLUSTERS FORMED IN SILICA BY ION IMPLANTATION, R.A. Zuhr, Oak Ridge National Laboratory, Oak Ridge, TN; and R.H. Magruder III, Vanderbilt University, Department of Applied and Engineering Sciences, Nashville, TN.

4:30 P.M. A6.9
THE ROLE OF GLASS STRUCTURE IN THE FORMATION OF IMPLANTED GOLD NANOCLUSTERS FOR ENHANCED NONLINEAR OPTICAL PROPERTIES, G.W. Arnold, A. Boscolo-Boscoletto, P. Mazzoldi, C. Meneghini, Unitá INFM, Dipartimento di Fisica, Padova, Italy; and G. Battaglin, Unitá INFM, Dipartimento di Chimica Fisica, Venezia, Italy.

4:45 P.M. A6.10
NANOCRYSTAL FORMATION VIA YTTRIUM ION IMPLANTATION INTO SAPPHIRE, E.M. Hunt, J.M. Hampikian, Georgia Institute of Technology, Department of Materials Science and Engineering, Atlanta, GA; and D.B. Poker, Oak Ridge National Laboratory, Solid State Division, Oak Ridge, TN.

Session A6: Optical Materials posters are included in this evening's poster session.

POSTER SESSION
Chairs: Y-T. Cheng, L. Harriott, D. Ila,
D. Poker and T. Sigmon
Tuesday Evening, November 28
8:00 P.M.
America Ballroom (W)


SESSION A5: POLYMERS


A5.9 GAS ABSORPTION DURING ION IRRADIATION OF A POLYMER TARGET, W.E. Wallace, National Institute of Standards and Technology, Gaithersburg, MD; T.T. Chiou, J.B. Rothman and R.J. Composto, University of Pennsylvania, Department of Materials Science and Engineering, Philadelphia, PA.

A5.10 SUSPENDED CONDUCTIVE POLYMER BRIDGES FROM ION IMPLANTED POLYMERS, James Kaufmann, Mary G. Moss, Brewer Science, Inc., Rolla, MO; Y.Q. Wang and Ryan E. Giedd, Southwest Missouri State University, Springfield, MO.

A5.11 ELECTROCHEMICAL MEASUREMENTS OF LITHIUM ION BOMBARDED POLYMERIC CARBON, G. Terry, D. Ila, Alabama A&M University, Center for Irradiation of Materials, Normal, AL; and D.B. Poker, Oak Ridge National Laboratory, Solid State Division, Oak Ridge, TN.

A5.12 HIGH ENERGY ION BEAM IMPLANTATION FOR IMPROVING POLYMER SURFACE HARDNESS, Z.Y. Zhou, G.Q. Zhao and C.C. Sun, Fudan University, T.D. Lee Physics Laboratory and Nuclear Science Department, Shanghai, China.

A5.13 SURFACE MODIFICATION OF PTFE AND IMPROVING ADHESION TO METAL BY Ar+ IRRADIATION IN OXYGEN ENVIRONMENT, Chang-Kyu Choi, Seok-Keun Koh and Hyung-Jin Jung, Korea Institute of Science and Technology, Division of Ceramics, Seoul, Korea.

A5.14 CHANGES OF WETTABILITY AND SURFACE ENERGY OF POLYMER BY keV Ar+ ION IRRADIATION, Jun-Sik Cho, Won-Kook Choi, Hyung Jin Jung and Seok-Keun Koh, Korea Institute of Science and Technology, Division of Ceramics, Seoul, Korea.

A5.15 SURFACE CHEMICAL REACTION BETWEEN POLYMER (PMMA AND PC) AND ENERGETIC Ar+ ION IN REACTIVE GASES ENVIRONMENT, Seok-Keun Koh, Won-Kook Choi, Jun-Sik Cho and Hyung-Jin Jung, Korea Institute of Science and Technology, Division of Ceramics, Seoul, Korea.

SESSION A6: OPTICAL MATERIALS

A6.11 PHOTOREFRACTIVE EFFECT IN GLASSES DOPED WITH MULTIVALENT IONS, Vladimir G. Dokuchaev, S.I. Vavilov State Optical Institute, NIIKIOEP, Sosnovy Bor, Russia.

A6.12 OPTICAL AND MAGNETIC PROPERTIES OF SILICA IMPLANTED WITH N+ AND Fe+, T. Isobe, Keio University, Faculty of Science and Engineering, Yokohama, Japan; R.A. Weeks, Vanderbilt University, Applied Science and Engineering, Nashville, TN; and R.A. Zuhr, Oak Ridge National Laboratory, Sold State Division, Oak Ridge, TN.

A6.13 THE STUDY OF ANNEALING OF DAMAGE INDUCED DURING IMPLANTATION OF KEV AND MEV ERBIUM AN OXYGEN IONS IN SILICON, Nick A. Sobolev, Oleg V. Alexandrov, Michail S. Bresler, Oleg B. Gusev, Ggigorii M. Gusinskii, Victor O. Naidenov, Elena I. Shek, Ioffe Physico-Technical Institute, St. Petersburg, Russia; Miroslav I. Makovijchuk and Evgenii O. Parshin, Institute of Microelectronics, Yaroslavl, Russia.

A6.14 WAVEGUIDE FORMATION IN SILICA BY IMPLANTATION WITH P, Si AND Ge IONS, Patrick W. Leech, Telstra Research Laboratories, Victoria, Australia; and Mark C. Ridgway, Australian National University, Canberra, Australia.

A6.15 TEMPERATURE DEPENDENT FLUORESCENCE FROM Gd2O2S:Tb INDUCED BY 45 MeV PROTON IRRADIATION, W.A. Hollerman, The Bevill Center for Advanced Environmental Technology, Muscle Shoals, AL; G.M. Jenkins, J.H. Fisher, L.R. Holland, E.K. Williams, D.Ila, H. Maleki, Alabama A&M University, Department of Physics, Normal, AL; and C.C. Foster, Indiana University, Cyclotron Facility, Bloomington, IN.

A6.16 ION BEAM AND OPTICAL CHARACTERIZATION OF MULTILAYER WAVEGUIDES IN LITHIUM NIOBATE, E.K. Williams, D. Ila, Alabama A&M University, Center for Irradiation of Materials, Normal, AL; S. Sarkisov, P. Venkateswarlu, Alabama A&M University, Center for Nonlinear Optics, Normal, AL; and D.B. Poker, Oak Ridge National Laboratory, Solid State Division, Oak Ridge, TN.

A6.17 THE INFLUENCE OF THE INTERRUPTIONS IN ION IMPLANTATION ON MAGNETIC PROPERTIES OF ION BEAM SYNTHESIZED GRANULAR FILMS IN SiO2, V.V. Bazarov, I.A. Faizrahmanov, A.A. Bukharaev and I.B. Khaibullin, Zavoisky Physical Technical Institute, Russian Academy of Sciences, Kazan, Russia.

A6.18 POST BOMBARDMENT ENHANCED OPTICAL ABSORPTION IN ION IMPLANTED SILICA, D. Ila, Alabama A&m University, Center for Irradiation of Materials, Normal, AL; C.C. Smith, NASA-MSFC, MSFC, AL; D.B. Poker, Oak Ridge National Laboratory, Solid State Division, Oak Ridge, TN; Chris Lawson and Dave Gale, University of Alabama at Birmingham, Department of Physics, Birmingham, AL.

A6.19 CHANGES OF OPTICAL PROPERTIES OF MgO INDUCED BY ION IMPLANTATION, Y. Qian, D. Ila, Alabama A&M University, Center for Irradiation of Materials, Normal, AL; K.E. He, M. Curley, Alabama A&M University, Center for Nonlinear Optics, Normal, AL; and D.B. Poker, Oak Ridge National Laboratory, Solid State Division, Oak Ridge, TN.

A6.20 RADIATION DAMAGES IN Ti+ AND Ti+ + He+ -IONS IMPLANTED VITREOUS SILICA, Vladimir I. Belostotsky, Institute of General and Inorganic Chemistry of Russian Academy of Sciences, Moscow, Russia.

A6.21 PROTON INDUCED DEFECT FORMATION IN QUARTZ GLASSES, Rano R. Gulamova, Eldar M. Gasanov and Rustam Alimov, Institute of Nuclear Physics, Tashkent, Uzbekistan.

A6.22 ION-BEAM-ASSISTED DEPOSITION OF METAL NANOCLUSTER THIN FILMS WITH NONLINEAR OPTICAL PROPERTIES, C.M. Cotell, C.A. Carosella, N. Haralampus, S.R. Flom and F.J. Bartoli, Naval Research Laboratory, Washington, DC.

A6.23 ELECTRONIC AND VIBRATIONAL SPECTRA OF InSb NANOCRYSTALS EMBEDDED IN AN OPTICAL GRADE FUSED SILICA, D.O. Henderson, A. Ueda, Y.S. Tung, R. Mu, Fisk University, Department of Physics, Nashville, TN; C.W. White, R.A. Zuhr and Jane G. Zhu, Oak Ridge National Laboratory, Solid State Division, Oak Ridge, TN.

A6.24 STUDY OF InAs QUANTUM DOTS BY MEANS OF SEQUENTIAL IMPLANTATION SiO2 WITH In AND As, Akira Ueda, D.O. Henderson, R. Mu, Yei-Shin Tung, Christopher Hall, Jane G. Zhu, Fisk University, Department of Physics, Nashville, TN; C.W. White and R.A. Zuhr, Oak Ridge National Laboratory, Solid State Division, Oak Ridge, TN.

A6.25 GaAs NANOCRYSTALS FORMED IN SiO2 BY ION IMPLANTATION, Jane G. Zhu, C.W. White, D.J. Wallis, J.D. Budai, S.P. Withrow, Oak Ridge National Laboratory, Solid State Division, Oak Ridge, TN; and D.O. Henderson, Fisk University, Department of Physics, Nashville, TN.

SESSION A7: PLASMA AND ION ASSISTED TECHNIQUES
Chairs: Yang-Tse Cheng and David B. Poker
Wednesday Morning, November 29
Salon E (M)


8:30 A.M. *A7.1
MATERIALS SCIENCE ISSUES OF PLASMA SOURCE ION IMPLANTATION, Michael Nastasi, K. C. Walter, R.J. Faehl, I. Henins, W.A. Reass, D.J. Rej, J.T. Scheuer and B.P. Wood, Los Alamos National Laboratory, Los Alamos, NM.

9:00 A.M. *A7.2
NEW DEVELOPMENTS IN METAL ION IMPLANTATION BY VACUUM ARC ION SOURCES AND METAL PLASMA IMMERSION, Ian G. Brown, A. Anders, S. Anders, M.R. Dickinson, R.A. MacGill, University of California, Lawrence Berkeley Laboratory, Berkeley, CA; and E.M. Oks, Visiting Scientist from the High Current Electronics Institute, Tomsk, Russia.

9:30 A.M. *A7.3
INDUSTRIAL APPLICATIONS OF DIRECTED BEAMS FOR IMPLANTATION AND COATING, G. Dearnaley and J. Arps, Southwest Research Institute, San Antonio, TX.

10:00 A.M. *A7.4
INDUSTRIAL APPLICATIONS OF THE MEVVAreg. ION SOURCE, J.R. Treglio, A.J. Perry and A. Elkind, ISM Technologies, San Diego, CA.

10:30 A.M. BREAK

11:00 A.M. *A7.5
CURRENT R&D TOPICS IN ION BEAM ASSISTED DEPOSITION: James K. Hirvonen, Materials Directorate, U.S. Army Research Laboratory, Watertown, MA.

11:30 A.M. *A7.6
RESIDUAL STRESS CONTROL BY ION BEAM ASSISTED DEPOSITION, Gary S. Was, J.W. Jones, L. Parfitt and C.E. Kalnes, University of Michigan, Department of Materials Science and Engineering, Ann Arbor, MI.

Session A7: Plasma and Ion Assisted Techniques posters are included in this evening's poster session.

SESSION A7: PLASMA AND
ION ASSISTED TECHNIQUES (continued)
Chairs: Yang-Tse Cheng and David B. Poker
Wednesday Afternoon, November 29
Salon E (M)

1:30 P.M. A7.7
TITANIUM NITRIDE FORMATION BY LOW ENERGY Ar ION BOMBARDMENT AND UV-LIGHT IRRADIATION DURING DEPOSITION, J. Geriach, H. Wengenmair, B. Stritzker and B. Rauschenbach, Universität Augsburg, Institut für Physik, Augsburg, Germany.

1:45 P.M. A7.8
LOW-ENERGY DEPOSITION OF HIGH-STRENGTH AL(O) ALLOYS FROM AN ECR PLASMA, J.C. Barbour, D.M. Follstaedt, J.A. Knapp, S.M. Myers, Sandia National Laboratories, Albuquerque, NM; D.A. Marshall and R.J. Lad, University of Maine, Orono, ME.

2:00 P.M. A7.9
DUAL ION BEAM SPUTTERING OF CARBIDE FILMS FOR EUV REFLECTANCE, Dan Schwarcz and R.A.M. Keski-Kuha, NASA Goddard Space Flight Center, Optical Research Section, Greenbelt, MD.

2:15 P.M. A7.10
EXPERIMENTAL INVESTIGATION OF METAL CORROSION PROTECTION USING PLASMA SOURCE ION IMPLANTATION TECHNIQUE, L. Zhang, J.H. Booske, J.L. Shohet, K. Mente, R. Popovich, E. Barrios, R. Mau, J. Jacobs, University of Wisconsin, Plasma ERC, Madison, WI; A. Bernadini, Litton Industries, Watertown, CT; E. Perize-Alberni and D. Freeman, Eastman Kodak Company, Corporate Research Laboratories, Rochester, NY.

2:30 P.M. BREAK

SESSION A8: METALS AND TRIBOLOGY
Chairs: Yang-Tse Cheng and Geoffrey Dearnaley
Wednesday Afternoon, November 29
Salon E (M)

3:00 P.M. *A8.1
APPLICATION OF NANOSCALE/MULTILAYER GRADIENT MATERIALS FOR APPLICATION IN THE ELECTROMAGNETIC GUN SYSTEMS, M.A. Otooni, U.S. Army Armament Research Development and Engineering Center, Picatinny Arsenal, NJ; I.G. Brown, S. Anders and Z. Wang, Lawrence Berkeley Laboratory, University of California, Berkeley, CA.

3:30 P.M. A8.2
WEAR RESISTANCE OF ELECTRODEPOSITED HARD CHROME IMPLANTED WITH NITROGEN, OXYGEN, CARBON AND BORON, K.C. Walter, N. Yu and M. Nastasi, Los Alamos National Laboratory, Materials Science and Technology Division, Los Alamos, NM.

3:45 P.M. A8.3
EFFECTS OF NEAR-SURFACE RESIDUAL STRESSES ON HARDNESS IN ION-IMPLANTED Ti-6Al-4V,

4:00 P.M. A8.4
ION IMPLANTATION OF STAINLESS STEEL AND TUNGSTEN CARBIDE, D. Rej, A. Griffin, I. Henins, P. Kodali, C. Munson, M. Natastasi, J. Schener, K. Walter, Los Alamos National Laboratory, Los Alamos, NM; N. Gavrilov, D. Emlin, V. Mizgulin, Institute of Electrophysics, Particle Beam Laboratory, Ekaterinburg, Russia; N. Lukin, M. Kuznetsov and Yu. Naumochkin, Solid State Chemistry Institute, Ekaterinburg, Russia.

4:15 P.M. A8.5
SURFACE MODIFICATION OF HIGH SILICON CONTENT ALUMINUM ALLOYS BY ION IMPLANTATION FOR IMPROVED WEAR RESISTANCE, Aboud Hamdi, Alaa Elmoursi, Gerard Malaczynski, General Motors, NAO R&D Center, Department of Electrical and Electronics, Warren, MI; Steven Simko, General Motors, NAO R&D Center, Analytical Chemistry Department, Warren, MI; and Royal Olsen, General Motors, NAO Manufacturing Center, Warren, MI.

4:30 P.M. A8.6
SELECTIVE SEEDING OF Ni FILMS ON SILICON SUBSTRATES USING ION IMPLANTATION, S. Bhansali, D.K. Sood, R.B. Zmood, Royal Melbourne Institute of Technology, Melbourne, Australia; and I.G. Brown, Lawrence Berkeley Laboratory, Berkeley, CA.

Session A7: Plasma and Ion Assisted Techniques and Session A8: Metals and Tribology posters are included in this evening's poster session.

POSTER SESSION
Chairs: Y-T. Cheng, L. Harriott, D. Ila,
D. Poker and T. Sigmon
Wednesday Evening, November 29
8:00 P.M.
America Ballroom (W)

SESSION A7: PLASMA AND ION-ASSISTED TECHNIQUES

A7.11 MOS DEVICES FABRICATIONS VIA PLASMA IMMERSION ION IMPLANTATION, S.M. Chen, Z.H. Jafri, R.M. Gwilliam and B.J. Sealy, University of Surrey, Department of Electronics and Electrical Engineering, Surrey, United Kingdom.

A7.12 ETCHING OF SEMICONDUCTOR MATERIALS DURING HYDROGEN PLASMA ION IMPLANTATION, Shu Qin, James D. Bernstein and Chung Chan, Northeastern University, Plasma Science and Microelectronics Laboratory, Department of Electrical and Computer Engineering, Boston, MA.

A7.13 HYDROGEN PLASMA ION IMPLANTATION FOR DEFECT PASSIVATION IN THIN FILM TRANSISTORS, Shu Qin, James D. Bernstein, Chung Chan, Northeastern University, Plasma Science and Microelectronics Laboratory, Boston, MA; and Tsu-Jae King, Xerox Palo Alto Research Center, Palo Alto, CA.

A7.14 NEW PLASMA SOURCE ION-IMPLANTATION TECHNIQUE FOR INNER SURFACE MODIFICATION OF MATERIALS, Sun Mu, Institute of Physics, Chinese Academy of Sciences, Beijing, China.

A7.15 AN APPARATUS FOR PLASMA IMMERSION ION IMPLANTATION AND MAGNETRON SPUTTER COATING, W. Ensinger, B. Stritzker and B. Rauschenbach, Universität Augsburg, Institut für Physik, Augsburg, Germany.

A7.16 COMPLEX PHASE FORMATION DURING HIGH DOSE NITROGEN PLASMA IMMERSION ION IMPLANTATION OF AUSTENITIC STAINLESS STEEL, K.T. Short, G.A. Collins, J. Tendys and C.H. Van Der Valk, Australian Nuclear Science and Technology Organisation, NSW, Australia.

A7.17 NANOMETER-SIZE PRECIPITATES IN PLASMA-DEPOSITED Al(O) ALLOYS (PLD, ECR), D.M. Follstaedt, J.C. Barbour, J.A. Knapp and S.M. Myers, Sandia National Laboratories, Albuquerque, NM.

A7.18 USING ELECTRON CYCLOTRON RESONANCE PLASMA FOR DEPOSITING EPITAXIAL TITANIUM NITRIDE THIN FILMS, Ivan H. Murzin, Structured Materials Industries, Inc., Piscataway, NJ; Nobuyuki Hayashi and Isao Sakamoto, Electrotechnical Laboratory, Tsukuba, Japan.

A7.19 GROWTH OF CN FILMS ON TiN COATED Si BY ION-AND ECR-ASSISTED VAPOR DEPOSITION, Ming Lu, A. Bousetta and A. Bensaoula, University of Houston, Space Vacuum Epitaxy Center, Houston, TX.

A7.20 EFFECT OF HYDROGENATION ON THE ELECTRICAL AND OPTICAL PROPERTIES OF GaSb, P.S. Dutta, H.L. Bhat, Indian Institute of Science, Bangalore, India; and Vikram Kumar, Solid State Physics Laboratory, Delhi, India.

A7.21 DEPOSITION OF HIGH QUALITY SiO2 FILMS USING TEOS BY ECR PLASMA, K. Sano, S. Hayashi, M. Nomura, Suzuki Motor Corporation, Hamamatsu, Japan; S. Wickramanayaka, Y. Nakanishi and Y. Hatanaka, Research Institute of Electronics, Shizuoka University, Hamamatsu, Japan.

A7.22 TiCN THIN FILM PREPARED BY C AND N IONS BEAM ENHANCED DEPOSITION, C.Y. Chung, Christina Lam, City University of Hong Kong, Department of Physics and Material Science, Hong Kong; Li Guoqing and Gong Zhexiang, Dalian University of Technology, Dalian, China.

A7.23 CARBON NITRIDE FORMATION BY PLASMA ASSISTED ION BEAM DEPOSITION (PAIBD), G.S. Tompa, I.H. Murzin, S.I. Kim, Structured Materials Industries, Inc., Piscataway, NJ; Y.O. Ahn, B. Gallois, T. Fischer and E. Forsythe, Stevens Insititue of Technology, Hoboken, NJ.

A7.24 ION-BEAM DEPOSITION OF AlN INTO SEMICONDUCTOR AND NON-SEMICONDUCTOR SUBSTRATES AT LOW TEMPERATURE, H. Karimy, E. Tobin, R. Bricault, P. Sioshansi, A. Cremins, F. Namavar, Spire Corporation, Bedford, MA; D. Perry, Purdue University, West Lafayette, IN.

A7.25 DEPOSITION OF BORON NITRIDE COATINGS BY REACTIVE RF MAGNETRON SPUTTERING: CORRELATION BETWEEN BORON AND NITROGEN FLUXES AND THE FLUX OF ENERGETIC AR+ IONS AT THE SUBSTRATE, Valentino Rigato, Monica Spolaore and Gianantonio Della Mea, INFN Laboratori Nazionali Legnaro, Legnaro, Italy.

A7.26 ION BEAM REACTIVE SPUTTER-DEPOSITION OF SILICON AND ZIRCONIUM OXIDES, S.D. Pringle, Department of Materials Science and Engineering, University of Liverpool, Liverpool, United Kingdom; R.Valizadeh and J.S. Colligon, University of Salford, Electronics and Electrical Engineering Department, Salford, United Kingdom.

A7.27 CO2/Ar -DUAL ION BEAM SPUTTER DEPOSITION OF REFRACTORY METAL OXIDES, B.E. Kempf and H.W. Dinges, DBP Telekom Forschungs- und Technologiezentrum, Darmstadt, Germany.

A7.28 ION BEAM ASSISTED DEPOSITION OF Si-DIAMOND-LIKE CARBON COATINGS ON LARGE AREA SUBSTRATES, Costas G. Fountzoulas, U.S. Army Research Laboratory, Materials Directorate, Watertown, MA.

A7.29 DIRECT METAL ION BEAM DEPOSITION, S.I. Kim, SKION Corporation, Hoboken, NJ; Y.O. Ahn, Y.W. Ko, M. Sohn and Y.S. Park, Stevens Institute of Technology, Hoboken, NJ.

A7.30 "CLEAN" ION ASSISTED DEPOSITION OF METAL ON CARBON, ALUMINUM, SILICON, Igor S. Tashlykov, Oleg G. Bobrovich and Valentin V. Tuljev, Byelorussian State Technological University, Department of Physics, Minsk, Belarus.

A7.31 DEPOSITION OF Cu FILMS FOR LASER MIRROR BY PARTIALLY IONIZED BEAM DEPOSITION, Seok-Keun Koh, Young-Soo Yoon, Ki-Hwan Kim and Hyung-Jin Jung, Korea Institute of Science and Technology, Division of Ceramics, Seoul, Korea.

A7.32 CONTROLS OF CRYSTALLINITY AND SURFACE ROUGHNESS OF CU FILM IN PARTIALLY IONIZED BEAM DEPOSITION, Seok-Keun Koh, Ki-Hwan Kim, Woon-Kook Choi, Young-Soo Yoon and Hyung-Jin Jung, Korea Institute of Science and Technology, Division of Ceramics, Seoul, Korea.

A7.33 THIN Mo FILMS DEPOSITED AND ANALYZED USING SUB-keV NOBLE GAS IONS, Jan van der Kuur, Ernst-Jan E. Melker, Tom P. Huijgen, Wilbert H.B. Hoondert, Gerard T.W.M. Bekking, A. van den Beukel and Barend J. Thijsse, Delft University of Technology, Laboratory of Materials Science, Delft, Netherlands.

A7.34 THE STRUCTURE AND CONTENT OF IMPURITIES IN Al FILMS DEPOSITED BY THE SELF-ION ASSISTED TECHNIQUE, Oleg V. Kononenko, V.K. Egorov and V.N. Matveev, Russian Academy of Sciences, Institute of Microelectronics Technology and High Purity Materials, Chernogolovka, Russia.

A7.35 ION BEAM DEPOSITION OF Ag(100-x)Fex (10<X<70 AT%) FILMS AND THEIR MAGNETOTRANSPORT AND MAGNETIC PROPERTIES, H.R. Khan and O. Loebich, Forschungsintitut für Edelmetalle und Metallchemie, Schwaebisch Gmuend, Germany.

A7.36 GROWTH AND STRUCTURE OF THIN FILMS BY HIGH-INTENSITY PULSED ION BEAM DEPOSITION, Yu. F. Ivanov, V.M. Matvienko, A.V. Potyomkin, G.E. Remnev and A.N. Zakoutayev, Tomsk Polytechnic University, Institute of Nuclear Physics, Tomsk, Russia.

A7.37 PHOTOLUMINESCENCE CHARACTERIZATION OF DEFECTS CREATED SILICON DUE TO ETCHING IN LOW-PRESSURE PLASMAS CONTAINING FLUORINE AND OXYGEN, I.A. Buyanova, A. Henry, B. Monemar, Linköping University, Department of Physics and Measurement Technology, Linköping, Sweden; J. L. Lindström, National Defence Research Establishment, Linköping, Sweden; and G.S. Oehrlein, State University of New York, Department of Physics, Albany, NY.


A7.38 FABRICATION OF BIAXIALLY ALIGNED YSZ FILMS USING DUAL ION BEAM DEPOSITION, Kevin G. Ressler, Neville Sonnenberg and Michael J. Cima, Massachusetts Institute of Technology, Ceramics Processing Research Laboratory, Cambridge, MA.

A7.39 AMORPHOUS CONDUCTING TIN OXIDE FILMS OBTAINED BY REACTIVE ION BEAM DEPOSITION, A.M. Mukhitdinov, Physical Technical Institute of National Academy of Sciences, Almaty, Kazakstan.

A7.40 GROWTH OF TIN OXIDE FILM DEPOSITED BY A HYBRID ION BEAM, Won-Kook Choi, Jun-Sik Cho, Seok-Kyun Song, Hyung-Jin Jung, Seok-Keun Koh, Korea Institute of Science and Technology, Division of Ceramics, Seoul, Korea; Jin-Seok Jeon and Dongsoo Choi, R&D Center, Korea Gas Corporation, Kyunggi-Do, Korea.

A7.41 CRYSTALLINE STRUCTURE AND COMPOSITION OF TIN OXIDE FILM GROWN BY A HYBRID ION BEAM AS A FUNCTION OF AVERAGE IRRADIATING ENERGY, Won-Kook Choi, Seok-Kyun Song, Hyung-Jin Jung, Seok-Keun Koh, Korea Institute of Science and Technology, Division of Ceramics, Seoul, Korea; Jun-Sik Cho and Ki Hyun Yoon, Yonsei University, Department of Ceramic Engineering, Seoul, Korea.

A7.42 LOW TEMPERATURE HYDROGEN PLASMA TREATMENT OF LAYERED TRANSITION METAL DICHALCOGENIDES, A.A. Chechovsky, L.M. Kulikov, A.A. Semjonov-Kobzar, Institute for Materials Science Problems, National Academy of Science of Ukraine, Kiev, Ukraine; L.G. Akselrud and L.P. Romaka, L'viv State University, Department of Chemistry, L'viv, Ukraine.

A7.43 A COMPACT NEGATIVE METAL ION BEAM SOURCE FOR SURFACE STUDIES, Y. Park, Y.W. Ko, M.H. Sohn, Stevens Institute of Technology, Department of Physics and Engineering Physics, Hoboken, NJ; and S.I. Kim, SKION Corporation, Hoboken, NJ.

A7.44 A NOVEL RECTILINEAR NEGATIVE CARBON ION BEAM SOURCE FOR LARGE-AREA AMORPHOUS DIAMOND LIKE CARBON COATINGS, M.H. Sohn, Y.O. Ahn, Y.W. Ko, Y.S. Park, Stevens Institute of Technology, Department of Physics and Engineering Physics, Hoboken, NJ; and S.I. Kim, SKION Corporation, Hoboken, NJ.

A7.45 ION SOURCES FOR ION BEAM ASSISTED THIN FILM DEPOSITION, Igor V. Svadkovski and Anatoli P. Dostanko, Belarussian State University of Informatics and Radioelectronics, TREA Department, Minsk, Belarus.

A7.46 CHARACTERIZATION OF BISMUTH DEPOSITS AND keV IMPLANTS USING RECOIL-NUCLEUS TIME OF FLIGHT NEUTRON DEPTH PROFILING AND PLASMA DESORPTION MASS SPECTROMETRY, John F. Welsh Jr., W. Ricky Ferrell and Emile A. Schweikert, Texas A&M University, Center for Chemical Characterization and Analysis, College Station, TX.

A7.47 PLASMA DESORPTION MASS SPECTROMETRY FOR MATERIALS CHARACTERIZATION, Michael J. Van Stipdonk and Emile A. Schweikert, Texas A&M University, Center for Chemical Characterization and Analysis, College Station, TX.

A7.48 NEW INSTRUMENTATION IN ARGONNE'S HVEM-TANDEM FACILITY, Charles W. Allen and Edward A. Ryan, Argonne National Laboratory, Materials Science Division, Argonne, IL.

A7.49 HIGH POWER PULSE ION IMPLANTATION IN Hg1-x Cdx Te, A.V. Voitsekhovskii, A.P. Kokhanenko, A.G. Korotaev, Tomsk State University, Department of Radiophysics, Tomsk, Russia; G.E. Remnev and M.S. Opekunov, Nuclear Physics Institute of Tomsk Politechnic University, Tomsk, Russia.

SESSION A8: METALS AND TRIBOLOGY

A8.7 TRIBOLOGICAL PROPERTIES OF ION BEAM DEPOSITED DLC FILMS, You-Ock Ahn, Young-Wook Ko, Min-Ho Sohn, Stevens Institute of Technology, Department of Physics/Engineering Physics, Hoboken, NJ; and Seong-In Kim, SKION Corporation, Hoboken, NJ.

A8.8 FRICTION CHANGE INDUCED BY SINGLE MEV ION IMPACT MEASURED BY SCANNING PROBE MICROSCOPE, Hisato Ogiso, Hiroshi Tokumoto, Joint Research Center for Atom Technology, Ibaraki, Japan; Shizuka Nakano and Kazushi Yamanaka, Mechanical Engineering Laboratory, Ibaraki, Japan.

A8.9 TRIBOLOGICAL PROPERTY CHANGES IN ALUMINUM ALLOY BY CARBON IMPLANTATION, N.N. Cherenda, V.V. Uglov, V.V. Khodasevich, Belorussian State University; and A.P. Laskovnev, Phsico - Technical Institute, Minsk, Belarus.

A8.10 MODIFICATION OF THE HIGH SPEED STEEL MECHANICAL PROPERTIES BY CO-IMPLANTATION, V.V. Uglov, V.V. Khodasevich, D.P. Rusalsky, Belorussian State University, Minsk, Belarus; and I.V. Kasko, Fraunhofer Society, Institute of Integrating Circuits, Erlangen, Germany.



A8.11 RESIDUAL STRESS PROFILES INDUCED ON STAINLESS STEEL BY Ar AND N PULSED ION IMPLANTATION, Jorge Feugeas, G. Sanchez, IFIR (CONICET-UNR) Rosario Argentina; and J.L. Lebrun, ENSAM, Paris, France.

A8.12 MAGNETIC RESONANCE IN IRON THIN FILMS IRRADIATED BY BORON IONS, V.V. Khodasevich, V.V. Uglov, T.M. Lapchuk and A.K. Kuleshov, Byelorrusian State University, Minsk, Belarus.

A8.13 MODIFICATION OF THE Ti/STEEL SYSTEM MECHANICAL PROPERTIES AT THE PRELIMINARY ARGON IRRADIATION, V.V. Khodasevich, V.V. Uglov, I.A. Solodukhin, and I.I. Prikhodko, Belorussian State University, Minsk, Belarus.

A8.14 MODIFICATION OF MoS2 FILM AND METAL - MoS2 MULTI-FILM BY METAL IONS IMPLANTATION, Li Guoqing, Gong Zhexiang, Zhang Tao, Dalian University of Technology, Dalian, China; Zhang Xushou, Liu Heiwen, Yu Deyang, Lan Zhou, Chemical Physics Institute, China; and C.Y. Chung, City University of Hong Kong, Hong Kong.

A8.15 STUDY ON THE ION DIFFUSING INTO METAL BY DOUBLE GLOW DISCHARGE, Jia-Quan Li, Ping Yu, Bin Yuan, Man Geng, Zhong Shang, Southwestern Institute of Physics, Chengdu, China; Zhong Xu, Cong-Zhen Wang and Yong-aun Su, Taiyuan University of Technology, Taiyuan, China.

SESSION A9: FOCUSED ION BEAMS
Chairs: Daryush Ila and Lloyd R. Harriott
Thursday Morning, November 30
Salon E (M)

8:30 A.M. *A9.1
FOCUSED ION BEAM METROLOGY, A. Wagner, P. Longo, S. Cohen and P.G. Blauner, IBM Watson Research Center, Yorktown Heights, NY.

9:00 A.M. *A9.2
GAS FIELD ION SOURCES FOR FINELY FOCUSED ION BEAMS, W. Thompson, A. Armstrong, S. Etchin, R. Percival and A. Saxonis, Micrion Corporation, Peabody, MA.

9:30 A.M. A9.3
HIGH CONDUCTIVITY FIB DEPOSITED METAL, Patricia G. Blauner, Alfred Wagner, IBM T.J. Watson Research Cntr., Yorktown Heights, NY.

9:45 A.M. A9.4
FORMATION OF BURIED TWO-DIMENSIONAL ELECTRON GAS IN GaAs BY Si ION DOPING USING MBE-FIB COMBINED SYSTEM, J. Yanagisawa, R. Wakaya, H. Nakayama, Y. Yuba, Osaka University, Department of Electrical Engineering, Faculty of Engineering Science, Osaka, Japan; and K. Gamo, Osaka University, Research Center for Extreme Materials and Department of Electrical Engineering, Faculty of Engineering Science, Osaka, Japan.

10:00 A.M. A9.5
ADVANTAGES OF VERY HIGHLY CHARGED IONS FOR FOCUSED ION BEAM ANALYSIS AND MODIFICATION OF MATERIALS, Michael A. Briere, Thomas Schenkel and Dieter H. Schneider, Lawrence Livermore National Laboratory, Livermore, CA.

10:30 A.M. BREAK

SESSION A10: SEMICONDUCTOR PROCESSING
Chairs: Lloyd R. Harriott and Daryush Ila
Thursday Morning, November 30
Salon E (M)
11:00 A.M. *A10.1
ENERGETIC ION BEAMS IN SEMICONDUCTOR PROCESSING: SUMMARY OF A DOE PANEL STUDY, E. Chason, S.T. Picraux, Sandia National Laboratories, Albuquerque, NM; J.M. Poate, AT&T Bell Laboratories, Murray Hill, NJ; J.O. Borland, Genus Corporation, Newburyport, MA; M.I. Current, Applied Materials, Austin, TX; T. Diaz de la Rubia, Lawrence Livermore National Laboratory, Livermore, CA; D.J. Eaglesham, AT&T Bell Laboratories, Murray Hill, NJ; W.O. Holland, Oak Ridge National Laboratory, Oak Ridge, TN; M.E. Law, University of Florida, Gainesville, FL; C.W. Magee, Evans East, Plainsboro, NJ; J.W. Mayer, ARizona State University, Tempe, AZ; J. Melnagailis, University of Maryland, College Park, MD; and A.F. Tasch, University of Texas, Austin, TX.

Session A9: FOCUSED ION BEAMS and Session A10: Semiconductor Processing posters are included in this evening's poster session.

SESSION A11: FUNDAMENTAL SEMICONDUCTOR PROCESSING
Chairs: Daryush Ila and Lloyd R. Harriott
Thursday Afternoon, November 30
Salon E (M)
1:30 P.M. *A11.1
ATOMISTIC CALCULATIONS OF POINT DEFECT PRODUCTION DURING IMPLANTATION AND ANNEALING IN SILICON, M. Jaraiz, G.H. Gilmer, J.M. Poate, AT&T Bell Laboratories, Murray Hill, NJ; and T. Diaz de la Rubia, Lawrence Livermore National Laboratory, Livermore, CA. 2:00 P.M. A11.2
ON THE ROLE OF ILLUMINATION DURING ION DAMAGE DEFECT ANNEAL IN SILICON, A. Tanabe and S. Ashok, Pennsylvania State University, Department of Engineering Science, University Park, PA.

2:15 P.M. A11.3
THE DETAILED DEPENDENCE OF IMPLANTED PHOSPHORUS PROFILES IN (100) SINGLE-CRYSTAL SI ON KEY IMPLANT PARAMETERS, V. Ghante, L.M. Lam, S. Morris, S.-H. Yang, A.F. Tasch, University of Texas at Austin, Austin, TX; D. Kamenitsa, Eaton Corporation, Austin, TX; J. Sheng, E. Evans and Associates, Redwood City, CA; and C. Magee, Evans East, Plainsboro, NJ.

2:30 P.M. A11.4
HYPERTHINNING OF SILICON AND SiO2 FOR LOW POWER ELECTRONIC APPLICATIONS, D.B. Oakes, A. Gelb, B.D. Green, A.N. Pirri and R. Wolfson, Physical Sciences, Inc., Andover, MA.

2:45 P.M. A11.5
SYNTHESIS OF THIN MEMBRANES IN Si TECHNOLOGY BY CARBON ION IMPLANTATION, L. Calvo-Barrio, C. Serre, A. Pérez-Rodríguez, A. Romano-Rodríguez, J.R. Morante, Universitat de Barcelona, Department Fisica Aplicada i Electrònica, Barcelona, Spain; J. Esteve, M.C. Acero, CNM-CSIC, Bellaterra, Spain; W. Skorupa and R. Kögler, Research Centre Rossendorf, Dresden, Germany.

3:00 P.M. BREAK

3:30 P.M. A11.6
DIFFUSION, PRECIPITATION, AND CAVITY-WALL REACTIONS OF ION-IMPLANTED GOLD IN SILICON, S.M. Myers and G.A. Petersen, Sandia National Laboratories, Albuquerque, NM.

3:45 P.M. A11.7
METAL-NONMETAL TRANSITION AND RESISTIVITY OF SILICON IMPLANTED WITH BISMUTH, E. Abramof, A. Ferreira da Silva, INPE/LAS, S.J dos Campos-SP, Brazil; B. Sernelius, Department of Physics, Linköping, Sweden; J.P. de Souza and H. Boudinov, UFRGS, Instituto de Fisica, Porto Alege-RS, Brazil.

4:00 P.M. A11.8
CHARACTERIZATION OF PHOSPHOROUS ION IMPLANTATION DAMAGE IN (100) SILICON, M. Xu, A. Agarwal, K.M. Christensen, D. Venables and D.M. Maher, North Carolina State University, Department of Materials Science and Engineering, Raleigh, NC.

4:15 P.M. A11.9
ANOMALOUS LEAKAGE CURRENT REDUCTION BY RAMPING RATE CONTROL IN MeV IMPLANTATION, K. Hamada, N. Nishio and S. Saito, NEC Corporation, ULSI Device Development Laboratories, Kanagawa, Japan.

4:30 P.M. A11.10
AN MEIS STUDY OF THIN GATE DIELECTRICS GROWN ON Si(100) BY RAPID THERMAL OXIDATION IN O2 AND N2O, E.P. Gusev, H.C. Lu, E. Garfunkel, T. Gustafsson, Rutgers University, Piscataway, NJ; M.L. Green and L.C. Feldman, AT&T Bell Laboratories, Murray Hill, NJ.

Session A11: FUNDAMENTAL SEMICONDUCTOR PROCESSING posters are included in this evening's poster session.

POSTER SESSION
Chairs: Y-T. Cheng, L. Harriott, D. Ila,
D. Poker and T. Sigmon
Thursday Evening, November 30
8:00 P.M.
America Ballroom (W)

SESSION A9: FOCUSED ION BEAMS

A9.6 SURFACE MICROTREATMENT BY DENSE METAL ION BEAMS, A.A. Kosyachkov and V.N. Kolesnik, Ukrainian National Academy of Sciences, Institute of Metal Physics, Kiev, Ukraine.

SESSION A11: FUNDAMENTAL SEMICONDUCTOR PROCESSING

A11.11 DYNAMIC ANNEALING DURING 11B+, 12C+ AND 14N+ IMPLANTATION IN SILICON, J.P. de Souza, H. Boudinov, Instituto de Física, UFRGS, Porto Alegre, Brazil; P.F.P. Fichtner, UFRGS, Escola de Engenharia, Porto Alegre, Brazil.

A11.12 THE ION IMPLANTATION USING FOR THE PURPOSE OF Si BASED HETEROSTRUCTURE PRODUCTION, Mikhail V. Kremkov, Institute of Power Engineering and Automation, Academy of Sciences of Uzbekistan, Tashkent, Uzbekistan; and Baltakhodja E. Umirzakov, Tashkent Technical University, Tashkent, Uzbekistan.

A11.13 PROPERTIES OF SILICON ON DEFECT LAYER MATERIAL, Jianming Li, K.W. Jones, Brookhaven National Laboratory, Upton, NY; J.H. Coleman, Plasma Physics Corporation, Locust Valley, NY; J. Yi, R. Wallace and W.A. Anderson, University of Buffalo, State University of New York, Buffalo, NY.

A11.14 INVESTIGATION OF LATERAL AND VERTICAL PROFILES ENHANCED BY IMPLANTATION, A. Mineji, K. Hamada and S. Saito, NEC Corporation, ULSI Device Development Laboratories, Kanagawa, Japan.

A11.15 NONLINEAR EVOLUTION OF TWO DIMENSION PEARSON-IV ION-IMPLANTED IMPURITY PROFILES IN SILICON NEAR THE DEFENCE MASK BOUNDARY, L.S. Monastyrsky and A.S. Kokodyniak, Lviv State University, Ukraine.

A11.16 ION IMPLANTATION DAMAGE AND B DIFFUSION IN LOW ENERGY B IMPLANTATION WITH GE PREIMPLANTATION, M. Kase and H. Mori, Fujitsu Limited, Kawasaki, Japan.

A11.17 EVOLUTION OF THE MICROESTRUCTURE IN HELIUM IMPLANTED SILICON DURING THERMAL ANNEALING, P.F.P. Fichtner, UFRGS, Department de Fisica, Porto Alegre, Brazil; J.P. de Souza, L. Amaral, UFRGS, Instituto de Fisica, Porto Alegre, Brazil; H. Trinkaus and M. Hacke, ISI, für Forschungszentrium Jülich, Jülich, Germany.

A11.18 AFM STUDY OF SURFACE MORPHOLOGY OF HIGH DOSE Co IMPLANTED Si WITH A MEVVA ION SOURCE, Qicai Peng, S.P. Wong, J.B. Wu and I.H. Wilson, The Chinese University of Hong Kong, Department of Electronic Engineering and Materials Technology Research Centre, Shatin N.T., Hong Kong.

A11.19 DETAILED ANALYSIS AND COMPUTATIONALLY EFFICIENT MODELING OF ULTRA-SHALLOW DOPANT PROFILES OBTAINED BY LOW ENERGY B, BF2, AND As ION IMPLANTATION, K.B. Parab, S._H. Yang, S.J. Morris, S. Tian, A.F. Tasch, University of Texas at Austin, Austin, TX; D. Kamenitsa, Eaton Corporation, Austin, TX; and C. Magee, Evans East, Plainsboro, NJ.

A11.20 LOW TEMPERATURE PHASE TRANSITIONS (PT) AND DEFECT FORMATION (DF) IN SILICON WITH DIOXIDE INCLUSIONS UNDER X-RAY IRRADIATION, Sh.M. Mahkamov and S.N. Abdurakhmanova, Institute of Nuclear Physics, Uzbekistan Academy of Sciences, Tashkent, Uzbekistan.

A11.21 MeV ION INDUCED DAMAGES AND THEIR ANNEALING BEHAVIOR IN SILICON, Nam-Hoon Cho and Jae-Sang Ro, Hong-Ik University, Department of Metallurgy and Materials Science, Seoul, Korea; Ki-Wan Jang and Jeong-Youg Lee, KAIST, Department of Materials Science and Engineering, Seoul, Korea.

A11.22 INVESTIGATION OF THE KINETICS OF OXIDATION OF SI IMPLANTED BY N+ AND C+ IONS, Boris N. Romanyuk, Valentin O. Popov, Nickolai I. Klyui, Victor P. Melnik, Anatoly A. Evtukh and Vladimir B. Lozinskii, Institute of Semicond. Phys., Kiev, Ukraine.

SESSION A12: COMPOUND SEMICONDUCTORS

A12.8 FORMATION OF THE SEMICONDUCTIVE LAYERS WITH SPECIFIC ELECTRIC PROPERTIES, Valeri R. Gaisinskii, Institute for Single Crystals, Kharkov, Ukraine; and Yuri N. Dmitriev, Polytechnical University, Kharkov, Ukraine.

A12.9 ETCHING OF THE PHOSPHOR LAYER ZnS:SmF3 FOR THE MULTI-COLOR THIN FILM ELECTROLUMINESCECE, Hai Y. Kang, Sung W. Kim and Jae H. Ryu, LG Electronics Research Center, Device and Materials Laboratory, Seoul, Korea.

A12.10 DOSE AND DOPING DEPENDENCE OF DAMAGE ANNEALING IN Fe MeV IMPLANTED InP, A. Carnera, B. Fraboni, A. Gasparotto, Università di Padova, Dipartimento di Fisica, Padova, Italy; F. Priolo, Università di Catania, Dipartimento di Fisica, Catania, Italy; A. Camporese, G. Rossetto, CNR-ICTIMA, Padova, Italy; and C. Frigeri, CNR-MASPEC, Parma, Italy.

A12.11 HIGH-ENERGY ION IMPLANTATION OF A MODERATELY DEEP ACCEPTOR Hg INTO LIQUID ENCAPSULATED CZOCHRALSKI GROWN GaAs: FORMATION OF NEW SHALLOW PHOTOLUMINESCENCE EMISSIONS, H. Shibata, K. Harada, B. Lo, Y. Makita, A.C. Beye, M.P. Halsall, S. Kimura, N. Kobayashi, T. Iida, T. Shima and A. Obara, Electrotechnical Laboratory, Tsukuba, Japan.

A12.12 ANNEALING EFFECT OF Cd+ ION-IMPLANTED LEC-GaAs, Yoko Kawasumi, Electrotechnical Laboratory, Tsukuba, Japan and Science University of Tokyo, Tokyo, Japan; Yunosuke Makita, Shinji Kimura, Tsutomu Iida, Akira Obara, Hajime Shibata, Naoto Kobayashi, Electrotechnical Laboratory, Tsukuba, Japan; and Takeyo Tsukamoto, Science University of Tokyo, Tokyo, Japan.

A12.13 ELECTRICAL ISOLATION OF IMPLANTED GaAs LAYER BY LIGHT ION BOMBARDMENT, J.P. de Souza, I. Danilov and H. Boudinov, Instituto de Física, UFRGS, Porto Alegre, Brazil.

A12.14 SUPPRESSION OF DISLOCATION FORMATION IN SILICON BY CARBON ION IMPLANTATION, Todd W. Simpson, Richard D. Goldberg and Ian V. Mitchell, University of Western Ontario, Department of Physics, London, Canada.

A12.15 FABRICATION OF FREE-STANDING MEMBRANES IN n-GaAs USING MeV NITROGEN IMPLANTATION FOR SENSORS, J. Miao, H.L. Hartnagel, B.L. Weiss, Technische Hochschule Darmstadt, Institut für Hochfrequenztechnik, Merckstrasse, Germany; and R.J. Wilson, University of Surrey, Department of Electronic and Electrical Engineering, Surrey, United Kingdom.

SESSION A12: COMPOUND SEMICONDUCTORS
Chairs: Daryush Ila and Lloyd R. Harriott
Friday Morning, December 1
Salon E (M)

8:30 A.M. *A12.1
C+ CO-IMPLANTATION IN AlxGa1-xAs, S.J. Pearton and C.R. Abernathy, University of Florida, Gainesville, FL.

9:00 A.M. A12.2
OPTICAL AND ELECTRICAL PROPERTIES OF HEAVILY CARBON DOPED GaAs FABRICATED BY HIGH-ENERGY ION IMPLANTATION, T. Shima, S. Kimura, M. Kotani, K. Harada, T. Iida, H. Shibata, A. Obara, E. Kobayashi, K. Kudo and K. Tanaka, Electrotechnical Laboratory, Tsukuba, Japan.

9:15 A.M. A12.3
CAVITY NUCLEATION AND EVOLUTION IN He-IMPLANTED Si AND GaAs, D.M. Follstaedt, S.M. Myers, G.A. Petersen and J.C. Barbour, Sandia National Laboratories, Albuquerque, NM.

9:30 A.M. A12.4
STRUCTURE AND ORIENTATION OF SEMICONDUCTOR NANOCRYSTALS FORMED IN INSULATORS BY ION-IMPLANTATION, J.D. Budai, C.W. White, S.P. Withrow and J.G. Zhu, Oak Ridge National Laboratory, Oak Ridge, TN.

10:00 A.M. BREAK

10:30 A.M. A12.5
THE EFFECTS OF LOW ENERGY ION-BEAMED MILLING ON THE PHYSICAL AND ELECTRICAL PROPERTIES OF n-GaAs, W.F. Seng, Michigan Technology University, Department of Physics, Houghton, MI; P.A. Barnes, Auburn University, Department of Physics, Auburn, AL; M.L. Lovejoy, Sandia National Laboratories, Albuquerque, NM; L.P. Fu, G.D. Gilliland, Emory University, Department of Physics, Atlanta, GA; and Daryush Ila, Alabama A&M University, Center for Irradiation of Materials, Normal, AL.



11:00 A.M. A12.6
ION BEAM ASSISTED QUANTUM WELL INTERMIXING, I.V. Mitchell, R.D. Goldberg, University of Western Ontario, Department of Physics, Ontario, Canada; S. Charbonneau, P. Poole, G. Aers, National Research Council Canada, Institute for Microstructural Science, Ottawa, Canada; and G. Weatherly, McMaster University, Department of Materials Engineering and Metallurgy, Hamilton, Canada.

11:30 A.M. A12.7
IRRADIATION-INDUCED DAMAGE AND INTERMIXING OF GAAS-ALGAAS QUANTUM WELLS, H.H. Tan, J.S. Williams, C. Jagadish, The Australian National University, Department of Electronic Materials Engineering, REsearch School of Physical Sciences and Engineering, Canberra, Australia; and M. Gal, University of New South Wales, School of Physics, Kensington, Australia.

Session A12: Compound Semiconductor posters are included in Thursday evening's poster session.


The following exhibitors have identified their products and services as directly related to your research:

Products and Services
A&N Corporation
APD Cryogenics, Inc.
ASTeX/Applied Science & Technology, Inc.
Commonwealth Scientific Corporation
Evans East
High Voltage Engineering Europa B.V.
Huntington Mechanical Laboratories
IBM Analytical Services
Implant Sciences Corporation
Ion Tech, Inc.
Kratos Analytical, Inc.
Maxtek, Inc.
National Electrostatics Corp.
Omicron Associates
Philips Semiconductors/Materials Analysis Group
Plasmaterials, Inc.
Research & PVD Materials Corporation
SKION Corporation
Solartron Instruments, Inc.
Staib Instruments, Inc.
Thermionics Laboratory, Inc.
VAT, Inc.

See page 6 for a list of companies exhibiting books and software and a complete list of exhibitors.