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Symposium EM5—Materials and Mechanisms of Correlated Electronic Phenomena in Oxide Heterostructures

The objective of this symposium is to address the materials and mechanisms of correlated electronic phenomena that arise in artificial transition-metal oxide (TMO) heterostructures due to strong electron-electron and/or electron-lattice interactions. Heterostructures and multilayers with atomically abrupt interfaces between complex TMOs are becoming available as a result of recent developments in thin-film-fabrication techniques. Such synthetic structures display properties that are dramatically different from those of the constituent oxides in their bulk forms. Advanced microscopy and spectroscopy techniques enable fundamental understanding of such heterostructures; particularly the emergence of novel electronic, magnetic, photonic and topological phenomena driven by correlation effects, broken symmetries, interfacial doping and interface induced structural modifications. Correlated electrons in TMO interfaces often induce metal-insulator transition, superconductivity and magnetism. These phase transitions can be tuned by external stimuli such as electric and magnetic fields and pressure, which makes oxide interfaces particularly interesting not only from the point of view of basic science but also as important ingredients in novel electronic devices. Of particular interest are digital interfaces that can be used in future applications such as spin-controlled electronics (spintronics) and quantum computation. Other fascinating examples are interfaces where multiple orders may coexist such as superconductivity with magnetism resulting in an exotic symmetry of the superconducting order-parameter, and ferromagnetism with ferroelectricity with a significant degree of coupling between the two order parameters. Interface designs have proven critical in enhancing macroscopic interdependent orders and their tunability. In addition to widely-studied 3d TMO heteostructures, 4d, 5d and 4f systems are also covered. In these systems, one could even anticipate novel phenomena due to the increased spin-orbit coupling, which competes or cooperates with correlation effects.

Topics will include:

  • Atomic scale structure and chemistry of oxide interfaces probed with x-ray, electron and neutron scattering techniques.
  • Electronic structure of oxide interfaces probed with photoemission, electron and x-ray spectroscopies.
  • Optoelectronic response of oxide based two-dimensional electron gas (2DEG) systems – photoconductivity, photoluminescence, electroluminescence and related phenomena.
  • Low temperature electronic transport in high mobility 2DEG systems – conductance oscillations, anisotropic magnetoresistance and effects of spin-orbit interaction.
  • Simulations, modeling and predictions of atomic and electronic structure of oxide interfaces.
  • Nanoscale sculpturing of oxide 2DEG: electronic transport under dimensional constraints.
  • New oxide interfaces based on 4d, 5d and 4f elements displaying superconductivity and ordered magnetism.

Invited Speakers:

  • Leon Balents (University of California, Santa Barbara, USA)
  • Anand Bhattacharya (Argonne National Laboratory, USA)
  • Manuel Bibes (CNRS-Thales, France)
  • Chang Beom Eom (University of Wisconsin, USA)
  • John W Freeland (Argonne National Laboratory, USA)
  • Karsten Held (Vienna University of Technology, Austria)
  • Hans Hilgenkamp (University of Twente, Netherlands)
  • Harold Hwang (Stanford University, USA)
  • Beena Kalisky (Bar-Ilan University, Israel)
  • Masashi Kawasaki (University of Tokyo, Japan)
  • Jerome Lesueure (ESPCI Paris Tech, France)
  • Jeremy Levy (University of Pittsburgh, USA)
  • Judith MacManus-Driscoll (Cambridge University, United Kingdom)
  • Jochen Mannhart (MPI-Stuttgart, Germany)
  • Jobu Matsuno (RIKEN, Japan)
  • David A Muller (Cornell University, USA)
  • Tae Won Noh (Seoul National University, Republic of Korea)
  • Rossitza Pentcheva (University of Duisburg-Essen, Germany)
  • Nini Pryds (Technical University of Denmark, Denmark)
  • Eiji Saitoh (Tohuku University, Japan)
  • Andres Santander-Syro (Université Paris-Sud, France)
  • George Sawatzky (University of British Columbia, Canada)
  • Susanne Stemmer (University of California Santa Barbara, USA)
  • Pu Yu (Tsinghua University, China)

Symposium Organizers

Ramesh C Budhani
Indian Institute of Technology Kanpur
Department of Physics
India
91-0512-2597185, rcb@iitk.ac.in

Yoram Dagan
Tel Aviv University
School of Physics and Astronomy
Israel
972-54-5996556, yodagan@post.tau.ac.il

Lena F Kourkoutis
Cornell University
Applied and Engineering Physics
USA

Satoshi Okamoto
Oak Ridge National Laboratory
Materials Science and Technology Division
USA
865-576-1317, okapon@ornl.gov