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Symposium EM11 : Wide-Bandgap Materials for Energy Efficiency—Power Electronics and Solid-State Lighting

2016-11-28   Show All Abstracts

Symposium Organizers

Robert Kaplar, Sandia National Laboratories
Mitsuru Funato, Kyoto University
Martin Kuball, Univ of Bristol
Matteo Meneghini, University of Padova
EM11.1: GaN Power Electronics I
Session Chairs
Jesus del Alamo
Martin Kuball
Monday AM, November 28, 2016
Hynes, Level 2, Room 201

8:30 AM - *EM11.1.01
Reliability and Instability of GaN MIS-HEMTs for Power Electronics

Jesus del Alamo 1 , Alex Guo 1 , Shireen Warnock 1

1 Massachusetts Institute of Technology Cambridge United States

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9:00 AM - *EM11.1.02
Reliability and trapping issues in GaN based MIS and p-GaN HEMTs

Gaudenzio Meneghesso 1 , Davide Bisi 1 , Isabella Rossetto 1 , Carlo de Santi 1 , Matteo Meneghini 1 , Enrico Zanoni 1

1 University of Padova - DEI Padova Italy

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9:30 AM - EM11.1.03
ALD Epitaxial Growth and Device Applications of MgCaO on GaN

Xiabing Lou 1 , Hong Zhou 2 , Sang Bok Kim 1 , Sami Alghamdi 2 , Xian Gong 1 , Peide Ye 2 , Roy Gordon 1

1 Harvard University Cambridge United States, 2 Purdue University West Lafayette United States

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9:45 AM - EM11.1.04
Atomic Force Microscope Measurements of Thermomechanical and Inverse-Piezoelectric Strain in AlGaN/GaN High Electron Mobility Transistors during Pulsed Operation

Matthew Rosenberger 1 , Man Prakash Gupta 2 , Jason Jones 2 , Eric Heller 3 , Samuel Graham 2 , William King 1

1 University of Illinois Urbana-Champaign Urbana United States, 2 Georgia Institute of Technology Atlanta United States, 3 Air Force Research Laboratory Wright-Patterson Air Force Base United States

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10:00 AM -
BREAK

10:30 AM - *EM11.1.05
Ron Reduction of Enhancement-Mode GaN HFET by Ge-Doped Regrown Layer with p-Type NiO Gate

Asamira Suzuki 1 , Songbeak Choe 1 , Hidetoshi Ishida 1 , Daisuke Ueda 2

1 Energy Solution Development Center Panasonic Corporation Osaka Japan, 2 Kyoto Institute of Technology Kyoto Japan

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11:00 AM - *EM11.1.06
Thermal Management in High Voltage Substrate Removal GaN Devices

Farid Medjdoub 1

1 IEMN-CNRS Villeneuve d'ascq France

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11:30 AM - EM11.1.07
Epitaxial Growth of InAlN/GaN Heterostructures on Silicon Substrates in a Single Wafer Rotating Disk MOCVD Reactor

George Papasouliotis 1 , Jing Lu 1 , Jie Su 1 , Ronald Arif 1

1 Vecco Instruments, Inc. Somerset United States

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EM11.2: GaN Power Electronics II
Session Chairs
Isik Kizilyalli
Gaudenzio Meneghesso
Monday PM, November 28, 2016
Hynes, Level 2, Room 201

1:30 PM - *EM11.2.01
Current Topics in Wide Band-Gap Semiconductors for Power Applications and Energy Efficiency

Isik Kizilyalli 1 , Timothy Heidel 1 , Daniel Cunningham 1

1 Advanced Research Projects Agency-Energy United States Department of Energy Washington United States

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2:00 PM - *EM11.2.02
A Roadmap beyond Si Power Electronics Enabled by Wide Bandgap Materials

Srabanti Chowdhury 1

1 Department of Electrical and Computer Engineering University of California Davis United States

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2:30 PM - EM11.2.03
Photoluminescence Characterization of Ion-Implanted and Epitaxial Mg-Doped GaN Prepared on Freestanding GaN Substrates

Shigefusa Chichibu 1 , Kazunobu Kojima 1 , Shinya Takashima 2 , Masaharu Edo 2 , Katsunori Ueno 2 , Mitsuaki Shimizu 3 , Tokio Takahashi 3 , Shoji Ishibashi 3 , Akira Uedono 4

1 Tohoku University Sendai Japan, 2 Fuji Electric Co. Ltd. Tokyo Japan, 3 AIST Tsukuba Japan, 4 Univ. of Tsukuba Tsukuba Japan

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2:45 PM -
BREAK

3:15 PM - *EM11.2.04
GaN Lateral and Vertical Transistors for Power Switching

Rongming Chu 1

1 HRL Laboratories Malibu United States

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3:45 PM - *EM11.2.05
Dynamic R ON Dispersion in Carbon Doped GaN Power Transistors—Importance of Leakage Paths

Michael Uren 1 , Martin Kuball 1

1 University of Bristol Bristol United Kingdom

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2016-11-29   Show All Abstracts

Symposium Organizers

Robert Kaplar, Sandia National Laboratories
Mitsuru Funato, Kyoto University
Martin Kuball, Univ of Bristol
Matteo Meneghini, University of Padova
EM11.3: Oxide Power Electronics
Session Chairs
Ramon Collazo
Martin Kuball
Tuesday AM, November 29, 2016
Hynes, Level 2, Room 201

8:30 AM - *EM11.3.01
Molecular Beam Epitaxy Growth of Ga 2O 3 Thin Films on β-Ga 2O 3 (001) Substrates

Yoshiaki Nakata 1 , Man Hoi Wong 1 , Akito Kuramata 2 , Shigenobu Yamakoshi 2 , Masataka Higashiwaki 1

1 National Institute of Information and Communications Technology Tokyo Japan, 2 Tamura Corporation Sayama Japan

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9:00 AM - EM11.3.02
Growth of Metastable ε- and α- Ga 2O 3 by PAMBE

Max Kracht 1 , Alexander Karg 1 , Joerg Schoermann 1 , Martin Eickhoff 1

1 Institute of Experimental Physics I, Justus Liebig University Giessen Giessen Germany

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9:15 AM - EM11.3.03
Epitaxial β-Ga 2O 3 Thin Film by Metal Organic Chemical Vapor Deposition

Fikadu Alema 1 , Brian Hertog 1 , Oleg Ledyaev 1 , Grant Thoma 1 , Ross Miller 1 , Andrei Osinsky 1 , Partha Mukhopadhyay 2 , Winston V. Schoenfeld 2

1 Agnitron Technology Eden Prairie United States, 2 CREOL, The College of Optics and Photonics University of Central Florida Orlando United States

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9:30 AM - EM11.3.04
Mg Ion Implantation Technology for Vertical Ga 2O 3 Power Devices

Man Hoi Wong 1 , Ken Goto 2 3 , Rie Togashi 3 , Hisashi Murakami 3 , Yoshinao Kumagai 3 , Akito Kuramata 2 , Shigenobu Yamakoshi 2 , Masataka Higashiwaki 1

1 National Institute of Information and Communications Technology Koganei, Tokyo Japan, 2 Tamura Corporation Sayama, Saitama Japan, 3 Tokyo University of Agriculture and Technology Koganei, Tokyo Japan

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9:45 AM - EM11.3.05
Ga Vacancies and Electrical Compensation in Ga 2O 3

Filip Tuomisto 1 , Esa Korhonen 1 , Gunter Wagner 2 , Michele Baldini 2

1 Aalto University Aalto Finland, 2 Leibniz Institute for Crystal Growth Berlin Germany

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10:00 AM -
BREAK

10:30 AM -
OPEN DISCUSSION

10:45 AM - EM11.3.07
Demonstration of 2-Dimensional β-Ga2O3 Solar-Blind Photodetectors

Sooyeoun Oh 1 , Janghyuk Kim 1 , Gwangseok Yang 1 , Hong-Yeol Kim 1 , Jihyun Kim 1

1 Korea University Seoul Korea (the Republic of)

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11:00 AM - EM11.3.08
Atomic-Layer-Deposition Temperature Effect on Current Conduction in Al 2O 3 Films as Investigated Using Space-Charge-Controlled Field Emission Model

Atsushi Hiraiwa 1 2 , Daisuke Matsumura 3 , Hiroshi Kawarada 3 1 4

1 Research Organization for Nano and Life Innovation Waseda University Shinjuku Japan, 2 Institute of Materials and Systems for Sustainability Nagoya University Shinjuku Japan, 3 Faculty of Science and Engineering Waseda University Shinjuku Japan, 4 The Kagami Memorial Laboratory for Materials Science and Technology Waseda University Shinjuku Japan

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11:15 AM - EM11.3.09
Corundum-Structured α-In2O3 as a Wide-Bandgap Semiconductor

Shizuo Fujita 1 , Masashi Kitajima 1 , Kentaro Kaneko 1

1 Kyoto University Kyoto Japan

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11:30 AM - EM11.3.10
Enhancing Electron Mobility in La-doped BaSnO3 Thin Films by Thermal Strain to Annihilate Extended Defects

Sangbae Yu 1 , Daseob Yoon 1 , Junwoo Son 1

1 Department of Materials Science and Engineering POSTECH Pohang Korea (the Republic of)

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11:45 AM - EM11.3.11
MOCVD Growth of Non-Polar GaN Film on (0 1 0) Gallium Oxide Substrate

Yu Cao 1 , Ray Li 1 , Adam Williams 1 , Mary Chen 1 , Andrea Corrion 1 , Rongming Chu 1 , Ryan Chang 1

1 HRL Laboratories Malibu United States

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EM11.4/EM12.8: Joint Session: Diamond and Wide Band Gap Semiconductors for Power Applications
Session Chairs
Paul May
Robert Nemanich
Tuesday PM, November 29, 2016
Hynes, Level 3, Room 311

1:30 PM - *EM11.4.1/EM12.8.1
Diamond Electronic Devices for Power Electronics

Etienne Gheeraert 1 2 3 , David Eon 1 2 , Matthieu Florentin 1 2 , Oluwasayo Loto 1 2 , Julien Pernot 1 2 4

1 Institut Neel Grenoble Alpes University Grenoble France, 2 Institut Neel CNRS Grenoble France, 3 University of Tsukuba Tsukuba Japan, 4 Institut Universitaire de France Paris France

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2:00 PM - EM11.4.2/EM12.8.2
Characterization of GaN-on-Diamond Wafers for High-Power Electronic Devices—Interlinks between Microstructure, Mechanical Stability and Thermal Properties

Martin Kuball 1 , Dong Liu 1 , Daniel Francis 2 , Firooz Faili 2 , Callum Middleton 1 , Julian Anaya 1 , James Pomeroy 1 , Daniel Twitchen 2

1 University of Bristol Bristol United Kingdom, 2 Element-Six Technologies Santa Clara United States

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2:15 PM - EM11.4.3/EM12.8.3
Over 2000 V Breakdown Voltage of Normally-Off C-H Diamond MOSFETs with High Threshold Voltage

Takuya Kudo 1 , Yuya Kitabayashi 1 , Daisuke Matsumura 1 , Yuya Hayashi 1 , Masafumi Inaba 1 , Atsushi Hiraiwa 1 , Hiroshi Kawarada 1 2

1 Waseda University Shinjuku Japan, 2 The Kagami Memorial Laboratory for Materials Science and Technology, Waseda University Shinjuku Japan

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2:30 PM - EM11.4.4/EM12.8.4
Thickness Dependent Thermal Conductivity of GaN and Diamond Films

Elbara Ziade 1 , Aaron Schmidt 1

1 Boston University Boston United States

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2:45 PM - EM11.4.5/EM12.8.5
Experimental and Simulation Study of Diamond Based Power Diodes

Timothy Grotjohn 1 2 , Steve Zajac 1 , Nutthamon Suwanmonka 1 , Ayan Bhattacharya 1 , Shreya Nad 1 , Amanda Charris 1 , Suoming Zhang 1 , Nicholas Miller 1 , Matthias Muehle 1 , John Albrecht 1 , Jes Asmussen 1 , Timothy Hogan 1 , Chuan Wang 1 , Robert Rechenberg 2 , Aaron Hardy 2 , Michael Becker 2 , Thomas Schuelke 1 2

1 Michigan State Univ East Lansing United States, 2 Fraunhofer USA Center for Coatings and Diamond Technologies East Lansing United States

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3:00 PM -
BREAK

EM11.5: AlN Power Electronics
Session Chairs
Robert Kaplar
Tuesday PM, November 29, 2016
Hynes, Level 2, Room 201

3:30 PM - *EM11.5.01
Material Considerations for the Development of Power Schottky Diodes Based on GaN and AlN Substrates

Ramon Collazo 1 , Pramod Reddy 1 , Brian Haidet 1 , Felix Kaess 1 , Biplab Sarkar 1 , Erhard Kohn 1 , Zlatko Sitar 1

1 North Carolina State University Raleigh United States

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4:00 PM - *EM11.5.02
Stress Relief in (0001) Grown AlGaN Heterostructures

Kenneth Jones 1 , Michael Derenge 1 , Erez Krimsky 1 , Randy Tompkins 1 , Daniel Magagnosc 1 , Brian Schuster 1

1 Army Research Laboratory Adelphi United States

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4:30 PM - EM11.5.03
Temperature-Dependent Optical and Electrical Properties of AlN Thin Films for High-Temperature Power Electronics

Yao Liu 2 1 , Bahadir Kucukgok 1 , Ian Ferguson 3 , Zhechuang Feng 2 , Na Lu 1

2 Guangxi Key Laboratory for the Relativistic Astrophysics, College of Physics Science and Technology Guangxi University Nanning China, 1 Lyles School of Civil Engineering Purdue University West Lafayette United States, 3 Department of Electrical and Computer Engineering University of North Carolina at Charlotte Charlotte United States

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2016-11-30   Show All Abstracts

Symposium Organizers

Robert Kaplar, Sandia National Laboratories
Mitsuru Funato, Kyoto University
Martin Kuball, Univ of Bristol
Matteo Meneghini, University of Padova
EM11.6: SiC Power Electronics
Session Chairs
Robert Kaplar
Lynn Petersen
Wednesday AM, November 30, 2016
Hynes, Level 2, Room 201

8:15 AM - *EM11.6.01
Lifetime Control and Breakdown Analysis in SiC for Ultrahigh-Voltage Power Devices

Tsunenobu Kimoto 1

1 Kyoto University Kyoto Japan

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8:45 AM - EM11.6.02
Local Deep Level Transient Spectroscopy Imaging for Characterization of Two-Dimensional Trap Distribution in SiO2/SiC Interface Using Super-Higher-Order Scanning Nonlinear Dielectric Microscopy

Norimichi Chinone 1 , Ryoji Kosugi 2 , Yasunori Tanaka 2 , Shinsuke Harada 2 , Hajime Okumura 2 , Yasuo Cho 1

1 Tohoku University Sendai Japan, 2 National Institute of Advanced Industrial Science and Technology Tsukuba Japan

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9:00 AM - EM11.6.03
Universal Parameter Characterizing SiO2/SiC Interface Quality Based on Scanning Nonlinear Dielectric Microscopy

Norimichi Chinone 1 , Alpana Nayak 1 , Ryoji Kosugi 2 , Yasunori Tanaka 2 , Shinsuke Harada 2 , Yuji Kiuchi 2 , Hajime Okumura 2 , Yasuo Cho 1

1 Tohoku University Sendai Japan, 2 National Institute of Advanced Industrial Science and Technology Tsukuba Japan

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9:15 AM - EM11.6.04
Analytical Electron Microscopy of Interfacial States in 4H-SiC/SiO2 MOS Devices

Joshua Taillon 1 , Voshadhi Amarasinghe 2 , Sarit Dhar 3 , Leonard Feldman 2 , Tsvetanka Zheleva 4 , Aivars Lelis 4 , Lourdes Salamanca-Riba 1

1 Materials Science and Engineering University of Maryland College Park United States, 2 Institute for Advanced Materials Rutgers University New Brunswick United States, 3 Physics Auburn University Auburn United States, 4 U.S. Army Research Laboratory Adelphi United States

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9:30 AM - EM11.6.05
Recombination Centres at the 4H-SiC / SiO 2 Interface, Investgated by Electrically Detected Magnetic Resonance and Ab Initio Modelling

Jonathon Cottom 1 , Gernot Gruber 2 , Gregor Pobegen 3 , Thomas Aichinger 4 , Alex Shluger 1

1 University College London London United Kingdom, 2 Graz University of Technology Graz Austria, 3 Kompetenzzentrum Automobil- und Industrieelektronik GmbH Villach Austria, 4 Infineon Technologies Villach Austria

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9:45 AM - EM11.6.06
Identification and Passivation of Performance Limiting Defects in Silicon Carbide pn-Junctions, an EDMR and Ab Initio Study

Jonathon Cottom 1 , Gernot Gruber 2 , Gregor Pobegen 3 , Alex Shluger 1

1 University College London London United Kingdom, 2 Graz University of Technology Graz Austria, 3 Kompetenzzentrum Automobil- und Industrieelektronik GmbH (KAI) Villach Austria

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10:00 AM -
BREAK

10:30 AM - *EM11.6.07
Navy Application of Silicon Carbide (SiC) Wide Bandgap (WBG) Semiconductors Enabling Future Power and Energy Systems

Lynn Petersen 1

1 Office of Naval Research Arlington United States

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11:00 AM - EM11.6.08
Reliability of SiC Gate Dielectrics for Power Devices—Accelerated Age Testing at Elevated Temperatures

Ruby Ghosh 1 , Reza Loloee 1

1 Michigan State University East Lansing United States

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11:15 AM - EM11.6.09
Can Ultrafast Laser Irradiation Improve Doping of SiC—The Role of Gaseous Environment, Temperature, Fluence, and Number of Pulses on Damage Threshold and Electrical Conductivity

Rico Cahyadi 1 , Minhyung Ahn 2 , Joseph Wendorf 1 , Magel Su 1 , Jamie Phillips 2 , Ben Torralva 3 , Steven Yalisove 1

1 Materials Science and Engineering University of Michigan Ann Arbor United States, 2 Electrical Engineering and Computer Science University of Michigan Ann Arbor United States, 3 Climate and Space Sciences and Engineering University of Michigan Ann Arbor United States

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11:30 AM - EM11.6.10
SiC Nitrided Surfaces—Surface Energy and Wettability

Eduardo Pitthan 1 2 , Voshadhi Amarasinghe 2 , Can Xu 2 , Torgny Gustafsson 2 , Fernanda C. Stedile 1 , Leonard Feldman 2

1 UFRGS Porto Alegre Brazil, 2 IAMDN Rutgers University Piscataway United States

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11:45 AM - EM11.6.11
Hot Filament CVD Epitaxy of 3C-SiC on 6H and 3C-SiC Substrates

Philip Hens 1 , Ryan Brow 2 , Hannah Robinson 2 , Michael Cromar 2 , Bart van Zeghbroeck 1 2

1 University of Colorado Boulder Boulder United States, 2 BASiC 3C, Inc. Longmont United States

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EM11.7: Physics of WBG Materials
Session Chairs
Kenneth Jones
Robert Kaplar
Wednesday PM, November 30, 2016
Hynes, Level 2, Room 201

1:30 PM - *EM11.7.01
Numerical Modelling of III-Nitride Materials and Power Devices

Enrico Bellotti 1

1 Electrical and Computer Engineering Department Boston University Boston United States

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2:00 PM - EM11.7.02
Density Functional Calculations of Defect Levels and Band Gaps in Cubic and Hexagonal SiC and GaN Using the Local Moment Counter Charge Technique

Arthur Edwards 1 , Peter Schultz 2 , Renee Van Ginhoven 1 , Andrew Pineda 1

1 Air Force Research Laboratory Kirtland AFB United States, 2 Sandia National Laboratory Albuquerque United States

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2:15 PM - EM11.7.03
Ab Initio Study of Excited Carrier Dynamics in Gallium Ni