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Topics

  • Fundamental Studies and Modeling of Epitaxial Processes
  • Wide-Bandgap Group-III Nitride Materials and Devices (AlN, GaN, InN, BN, etc.)
  • III-V Semiconductors and Devices (Arsenides, Phosphides, Antimonides and Dilute Nitrides)
  • Narrow Bandgap Materials and Devices (InAs, Antimonides, Bismides)
  • II-VI Materials and Devices (CdTe, ZnO, ZnSe, ZnS, MCT, etc.)
  • Semiconducting Oxides and Epitaxial Dielectrics (TCO, Ga2O3, SnO2, etc.)
  • Epitaxy of 2D Materials and van der Waal Heterostructures
  • Heteroepitaxy of Mismatched Alloys and III-Vs on Si
  • Growth of Nanowires, Nanostructures and Low-dimensional Structures (Dots, Wires and Quantum Wells)
  • Patterned Growth and Selective Area Epitaxy
  • Atomic Layer Deposition and Epitaxy
  • Pseudo-substrates and Epitaxial Lift-off Processes
  • In Situ Monitoring, Process Control and Reactor Modeling
  • In Situ Etching
  • Nano-scale Characterization and Other Techniques
  • Point Defects and Doping
  • Growth for Energy Technology (Solid State Lighting, PV, Thermoelectrics, etc.)
  • Equipment, Safety, Environmental and Production Issues
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