5th International Symposium on Growth of III-Nitrides

May 18-22, 2014

The Westin Hotel Peachtree Plaza
Atlanta, Georgia

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Scope

The 5th International Symposium on Growth of III-Nitrides (ISGN-5) was held May 18-22, 2014, in Atlanta, Georgia. ISGN-5 was organized by the Materials Research Society and was the fifth symposium in a biannual series focusing specifically on growth in III-nitride materials, nanostructures and device structures that started in 2006 (Linköping, Sweden), and continued in 2008 (Izu, Japan), 2010 (Montpellier, France) and 2012 (St. Petersburg, Russia).

The ISGN series of conferences have been premier international forums for experts from academia, industry and national laboratories to present their latest progress and exchange ideas in the fundamental and applied aspects of III-N bulk and epitaxial growth technologies, as well as related device advances. III-N compound semiconductor materials underlie many of today's most advanced high-performance devices such as LEDs, laser diodes and transistors, which are becoming an essential part of the solution of many global problems. In the future, III-N solar cells, nanostructure materials and other innovative devices will play a similar significant role in improving the human condition. ISGN-5 is being organized to foster the continued advance of this important field of research and development.

Symposium Topics

  • III-N Bulk growth:  AlN, GaN, InN
  • Epitaxial growth techniques
  • Ternary and quaternary alloys
  • III-N nanostructures
  • Defect control and surface effects
  • Optical and electrical properties
  • III-N magnetic and spin-related phenomena
  • III-N devices:  FETs, HBTs, rectifiers, LEDs, lasers, photodetectors and novel devices

Contact Debbie Kriss with questions.

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