- Attendance for short courses is limited, and registration will be on a first-come, first-served basis
- Short courses run simultaneously
- Additional purchase is required
TCAD for Nitride Semiconductor Device Design and Analysis
Sunday, October 2 | 1-5 p.m.
Presented by Steve Broadbent, Senior Application Engineer, Silvaco, Inc.
TCAD (Technology CAD) is an essential tool for process and device development for state-of-the art electronic devices, particularly those in emerging technologies like nitride semiconductors. In this short course, participants will receive a comprehensive overview to the capabilities of TCAD and its application to high speed, high power, and optoelectronic nitride devices through 2D and 3D device and process simulations.
Part 1 of the course will give attendees an introduction and tutorial to basic requirements of a TCAD simulation. TCAD simulation requires: proper structural definition either through geometric specification or advanced process simulation, correct application of advanced physical models for electrical and optical operation, and also requires proper mesh design and application of advanced numerical solvers, for fast multiprocessor computation. In this introduction users will be introduced to the Silvaco Process and Device Simulators and explained the basics of a successful TCAD simulation, as well as introduced to the Silvaco Graphical User Interfaces used to both easily create a TCAD structure, design process and device experiments, as well as display and analyze the results in detail.
Part 2 of the short course will cover the use of TCAD tools as applied to optoelectronic devices in nitride material systems. Specifically, Lasers, LEDs, and detectors; single and multiple quantum well devices; edge-emitting and vertical cavity lasers.
Part 3 of the short course will cover the use of TCAD tools as applied to power and high frequency devices. We will cover the simulation of breakdown, termination structures, self-consistent electro-thermal simulation as applied to breakdown and device performance, and extraction of rf parameters for high frequency devices. Additionally mixed mode simulation will be covered, which combines the physical accuracy of a TCAD device with a surrounding SPICE circuit, enabling co-simulation for maximum accuracy and design optimization.
Outcomes: Attendees of the short course will be introduced to TCAD, become proficient in TCAD basics, and be exposed to a detailed sampling of TCAD examples as applied to Nitride electronics. Users will have the opportunity to work with Silvaco following the course to gain trial access to TCAD software, allowing attendees to run simulation examples shown in the short course as well as their own variations.
Be sure to visit Silvaco in the Exhibit Hall.
(Al,Ga,In)N Characterization Using X-Ray Diffraction
Sunday, October 2 | 1-5 p.m.
Presented by Lars Grieger, PANalytical B.V.
Lars Grieger is a materials engineer currently working at PANalytical B.V. in a dual role. He is a technical application expert (X-ray diffraction) and product manager (X-ray fluorescence) for semiconductor metrology tools. His 10 years of experience in this industry span the whole periodic table of epitaxial layers deposited globally in either research groups or automated fabs. He trains scientists and consults case based on the right use of X-ray metrology. Previous R&D work included medical implants, colloids synthesis, and tool coatings. Please connect via Lars.Grieger@PANalytical.com or LinkedIn.
A lot of research efforts are currently spent on the development and improvement of heterostructures grown by MBE (Molecular Beam Epitaxy) or MOVPE (Metal Organic Vapor Phase Epitaxy). High-resolution X-ray scattering techniques are well established tools for the nondestructive structural characterization of epitaxial layers, heterostructures and superlattice systems. All relevant layer parameters can be obtained, for instance composition and uniformity of epitaxial layers, their thicknesses, strain relaxation and crystalline perfection. Interface properties like interdiffuse and intermixing can be studied under certain cases as well.
Very often, a series of scans along one distinct direction in reciprocal space are used for the investigation. However, maps around a reciprocal lattice spot allow determining independently lattice plane tilts from asymmetry effects and substrate curvature induced broadening from film mosaicity and lateral correlation effects. The degree of relaxation of mismatched layers is directly evident from such maps. Typically reciprocal space map measurements with a crystal analyzer equipped with a point based offer highest resolution and accuracy, but are inherently slow. For moderately complex layer structures, an area detector like the PIXcel3D or other position sensitive detectors currently offer acquisition times that are more than one order of magnitude lower.
This four-hour short course aims to explain the basics of the X-ray diffraction physics, aspects of sample alignment, measurement possibilities and their pitfalls and analysis strategies as well. We will present several examples of reciprocal space maps on current state of the art nitride structures and will connect remotely to a lab diffractometer in order to demonstrate the measurement strategies live.
Be sure to visit PANalytical in the Exhibit Hall.