Call For Papers: Focus Issue on Frontiers in Thin-Film Epitaxy and Nanostructured Materials
This special issue of the Journal of Materials Research will address synthesis and processing of novel thin-film and bulk nanostructured materials, including self-assembly processing, defects and interfaces, atomic-scale characterization, structure-property correlations, modeling, and devices. Next-generation solid state devices will require integration of various functions on practical substrates, particularly on Si(100) computer chips. This integration will necessitate epitaxial growth of materials of different functions on a chip, where total misfit could range from less than 1% to over 25%. Special topics of interest in thin-film heterostructures include epitaxy across the misfit scale, domain-matching epitaxy, modeling and control of defects and interfaces, critical phenomena at interfaces, integration of functionality, three-dimensional epitaxial self-assembled structures, and quantum-well nanostructuring for improved properties and device structures. Special topics of interest in the area of bulk materials include characteristics of twins and grain boundaries as a function of grain size, control and optimization of strength and ductility in nanostructured materials, stability issues, modeling and novel designs for unique and improved nanostructured materials.
Contributed papers are solicited in the following areas:
- Thin-film and bulk processing techniques
- Thin-film growth modes for 2-D and 3-D nanostructures
- Sources of strains in thin-film heterostructures
- Stress-strain relations and polarization in cubic (isotropic) and hexagonal (anisotropic) crystals and thin-film heterostructures
- Lattice (stress/strain) relaxation mechanisms: nucleation and propagation of dislocations; atomic structure of dislocations at the heterointerfaces; interplay between strain, chemistry and polarization and other properties
- Domain-matching epitaxy: epitaxy across the misfit scale
- Polar and nonpolar III-nitride and II-oxide heterostructures
- Integration of vanadium oxide, titanium oxide, PZT and other oxide-based heterostructures
- Domain epitaxy for 3-D self-assembled nanostructures
- Modeling of defects and interfaces
- Correlations with properties and device implications
- Twins and grain boundaries in nanocrystalline materials
- Novel architectures for optimization of strength and ductility
- New nanostructured materials and properties
GUEST EDITORS
Jagdish (Jay) Narayan, North Carolina State University, Raleigh, NC
Amit Goyal, Oak Ridge National Laboratory, Oak Ridge, TN
Sungho Jin, University of California, San Diego, CA
Haiyan Wang, Texas A&M University, College Station, TX
Justin Schwartz, North Carolina State University, Raleigh, NC
MANUSCRIPT SUBMISSION
To be considered for this issue, new and previously unpublished results significant to the development of this field should be presented. The manuscripts must be submitted via the JMR electronic submission system by November 15, 2012. Manuscripts submitted after this deadline will not be considered for the issue due to time constraints on the review process. Submission instructions may be found at www.mrs.org/jmr-instructions/. Please select “Focus Issue: Frontiers in Thin-Film Epitaxy and Nanostructured Materials” as the manuscript type. All manuscripts will be reviewed in a normal but expedited fashion. Papers submitted by the deadline and subsequently accepted will be published in the Focus Issue. Other manuscripts that are acceptable but cannot be included in the issue will be scheduled for publication in a subsequent issue of JMR.
Please contact jmr@mrs.org with questions.
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