Frances M. Ross

Frances M. Ross - OYI 2000

Frances M. Ross, IBM T.J. Watson Research Center

2000 Outstanding Young Investigator

"For innovative and powerful experimental studies, based upon development of novel in-situ electron microscopy techniques, that have provided fundamental new understanding of nucleation, growth, oxidation and etching processes in a wide range of materials systems."

Frances Ross is a research staff member at the IBM T.J. Watson Research Center in Yorktown Heights, New York. She received her Ph.D. on transmission electron microscopy of silicon oxides from Cambridge University and then worked for two years as a postdoctoral Fellow at AT&T Bell Laboratories in Murray Hill, New Jersey. During this time she carried out in situ electron microscopy experiments on silicon oxidation and dislocation motion in electronic devices. She then spent four years as a staff scientist at the National Center for Electron Microscopy at Lawrence Berkeley National Laboratory, supervising the operation of the Berkeley Atomic Resolution Microscope and the In-Situ Microscope and developing specimen holders for dynamic experiments on electrochemical etching of silicon and domain motion in ferroelectric materials. She moved to IBM in 1997 and has recently been studying epitaxial growth processes of semiconductors and silicides by making real-time observations in the microscope. Ross' interests include the application of in situ electron microscopy to understanding reaction mechanisms, in particular semiconductor growth, surface reactions, and electrochemistry, as well as applied aero- and hydrodynamics. She has organized MRS symposia on materials in sports and recreation and electron microscopy of semiconducting materials.

At the 2000 MRS Spring Meeting, Ross delivered an awards talk entitled "Dynamic Studies of Semiconductor Growth Processes Using In-Situ Electron Microscopy."

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