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• Atomic Force Microscopy and Spectroscopy of Self-Assembled InAsSb Quantum Dots Grown on InP Substrates by MOCVD B1.2
  Authors: Yongkun Sin, Hyun I. Kim, Gary W. Stupian, Yueming Qiu


• Quantum-dot molecules for potential applications in Terahertz devices B1.3
  Authors: Valeria Gabriela Stoleru, Elias Towe, Chaoying Ni, Debdas Pal


• Ribbon Award Winner
  Intersubband Transitions in In0.3Ga0.7As/GaAs Multiple Quantum Dots of Varying Dot-Sizes B1.4
  Authors: Y. C. Chua, Jie Liang, B. S. Passmore, E. A. DeCuir, M. O. Manasreh, Zhiming Wang, G. J. Salamo


• (110) Quantum Dots: Growth, Single Dot Luminescence and Cleaved-Edge Alignment B1.5
  Authors: D. Wasserman, E. A. Shaner, S. A. Lyon, M. Hadjipanayi, A. C. Maciel, J. F. Ryan


• The definition of multiple bandgaps in quantum-dot material by intermixing B1.6
  Authors: A. Catrina Bryce, John H. Marsh, Dan A. Yanson, Olek P. Kowalski, Shin-Sung Kim


• Optical characterization of hierarchically self-assembled GaAs/AlGaAs quantum dots B1.7
  Authors: F. Marabelli, A. Rastelli, O. G. Schmidt, G. Beaurin, M. Geddo, G. Guizzetti


• Ribbon Award Winner
  Virtual Fabrication of Small Ga-As/P and In-As/P Clusters with Pre-Designed Electronic Pattern Structure B1.8
  Authors: Liudmila A. Pozhar, Alan T. Yeates, Frank Szmulowicz, William C. Mitchel


• Thermal Stability of InGaAs Quantum Dots Under Large Temperature Transients B1.9
  Authors: R. Rangarajan, V. C. Elarde, J. J. Coleman


• Structural and Optical Effects of Capping Layer Material and Growth Rate on the Properties of Self-Assembled InAs Quantum Dot Structures B2.1
  Authors: Gabriel Agnello, Vadim Tokranov, Michael Yakimov, Matthew Lamberti, Yuegui Zheng, Serge Oktyabrsky


• Vertical and in-plane electrical transport in InAs/InP semiconductor nanostructures B2.3
  Authors: K. O. Vicaro, J. R. R. Bortoleto, H. R. Gutiérrez, L. Nieto, A. A. G. von-Zuben, A. C. Seabra, P. A. Schulz, M. A. Cotta


• Structural investigation of InAs/InGaAs/InP nanostructures: origin and stability of nanowires B2.4
  Authors: L. Nieto, H. R. Gutiérrez, J. R. R. Bortoleto, R. Magalhães-Paniago, M. A. Cotta


• Electric Field Enhancement of Dark Current Generation in Detectors B2.7
  Authors: James P. Lavine


• Longitudinal Modes in InAlGaAs/GaAs High-Power Laser Diodes B2.8
  Authors: B. S. Passmore, Y. C. Chua, M. O. Manasreh, J. W. Tomm


• Heterostructures with Strained InGaAs Quantum Wells for RCE Photodiode Applications in the 1.8-2μm Spectral Range B2.9
  Authors: Jadwiga Zynek, Agata Jasik, Jaroslaw Gaca, Marek Wojcik, Wlodzimierz Strupinski, Jaroslaw Rutkowski, Artur Wnuk, Krzysztof Klima


• Good Temperature Performances of 870nm Resonant-Cavity Light Emitting Diode (RCLED) B2.10
  Authors: Lih-Wen Laih, Yi-Hao Wu, Li-Hong Laih, Rong-Moo Hong, Hao-Chung Guo, Jung-Lung Yu, Yu-Hsiang Huang, Yi-An Chang, Ren-Jiun Chang, Chun-Hui Yang, I-Tsung Wu


• Electrical Measurement of Recombination Lifetime in Blue Light Emitting Diodes B2.11
  Authors: M. A. Awaah, R. Nana, K. Das


• Application of Low Temperature InP Wafer Bonding Towards Optical Add/Drop Multiplexer Realization B2.14
  Authors: J. Arokiaraj, S. Vicknesh, A. Ramam


• Short-Period Strain-balanced GaAs_1-xN_x/InAs(N) Superlattices Lattice-matched to InP(001): a new material for 0.4-0.6 eV mid IR applications B2.18
  Authors: L. Bhusal, A. Alemu, A. Freundlich


• The Er3+ and Yb3+-related emission from Er,Yb co-implanted Al_0.70Ga_0.30As/GaAs prepared MOCVD method B2.19
  Authors: Tomoyuki Arai, Shin-ichiro Uekusa


• Annealing Effects of ZnO Nanorods on DC Inorganic Electroluminescent Device Characteristics B2.20
  Authors: Shinya Sasaki, Hiroshi Miyashita, Takashi Kimpara, Tomomasa Satoh, Takashi Hirate


• Zinc oxide quantum dot formation using low energy ion implantation B2.21
  Authors: I. Muntele, P. Thevenard, C. Muntele, B. Chhay, D. Ila


• Fabrication of ZnO Coated ZnS:Mn2+ Nanoparticles B2.22
  Authors: Shinji Ishizaki, Yusuke Kusakari, Masakazu Kobayashi


• Ribbon Award Winner
  Defect Structures in Undoped and Doped ZnO Films Studied by Solid State Diffusion B2.23
  Authors: Haruki Ryoken, Isao Sakaguchi, Takeshi Ohgaki, Naoki Ohashi, Yutaka Adachi, Hajime Haneda


• Electrical Properties of ZnO Thin Films Deposited by Pulsed Laser Deposition B2.25
  Authors: S. P. Heluani, G. Simonelli, M. Villafuerte, G. Juarez, A. Tirpak, G. Braunstein, F. Vignolo


• Growth and Characterization of ZnO Nanonails B2.26
  Authors: H. W. Seo, D. Wang, Y. Tzeng, N. Sathitsuksanoh, C. C. Tin, M. J. Bozack, J. R. Williams, M. Park


• Synthesis and Characterization of ZnO Nanoparticles B2.27
  Authors: I. U. Abhulimen, X. B. Chen, J. L. Morrison, V. K. Rangari, L. Bergman, K. Das


• Ribbon Award Winner
  Raman spectroscopy of V and Co doped ZnO ceramics and thin films B2.28
  Authors: K. Samanta, N. Awasthi, B. Sundarakannan, P. Bhattacharya, R. S. Katiyar


• Intersubband Transition in GaN/AlGaN Multi Quantum Wells B2.29
  Authors: E. A. DeCuir-Jr., Y. C. Chua, B. S. Passmore, J. Liang, M. O. Manasreh, J. Xie, H. Morkoc, A. Asghar, I. T. Ferguson, A. Payne


• Electrical and dielectric behavior of Pb(Mg1/4Ni1/4W1/2)O3 ceramics B2.32
  Authors: Adolfo Franco Júnior


• Preparation and luminescent properties of SrS:Ce by addition of sulphur and co-activator in SrSO_4:Ce(SO_4).7H_2O by carbothermal reduction B2.33
  Authors: P. Thiyagarajan, M. Kottaisamy, K. Sethupathi, M. S. R. Rao


• InAs Quantum Dots for Optoelectronic Device Applications B3.4
  Authors: K. Stewart, S. Barik, M. Buda, H. H. Tan, C. Jagadish


• Superfluorescence of Ion Beam Synthesized Dense-Packed Embedded CdSe Nanoclusters B3.5
  Authors: H. Karl, I. Großhans, P. Huber, B. Stritzker


• Synthesis of highly photoluminescent CdTe nanocrystals and their incorporation into glass matrices B3.6
  Authors: Norio Murase, Chunliang Li


• The General Synthesis of Nanostructured V/VI Semiconductors B3.8
  Authors: Paul Christian, Paul O’Brien


• Ultrashort Pulse Generation with Semiconductor Modelocked Lasers Using Saturable Absorbers Based on Intersubband transitions in GaN/AlGaN Quantum Wells B4.1
  Authors: Faisal R. Ahmad, Paul George, Jahan Dawlaty, Fahan Rana, William J. Shaff


• Spectroscopic Analysis of External Stresses in Semiconductor Quantum-Well Materials B4.4
  Authors: Jens W. Tomm, Mark L. Biermann, B. S. Passmore, M. O. Manasreh, A. Gerhardt, Tran Q. Tien


• Processing of deeply etched GaAs/AlGaAs quantum cascade lasers with grating structures B5.2
  Authors: S. Golka, M. Austerer, C. Pflügl, W. Schrenk, G. Strasser


• Zener Tunneling of Light in an Optical Superlattice B5.8
  Authors: Mher Ghulinyan, Zeno Gaburro, Lorenzo Pavesi, Claudio J. Oton, Costanza Toninelli, Diederik S. Wiersma


• Ribbon Award Winner
  Dispersion Engineering of Three-Dimensional Silicon Photonic Crystals: Fabrication and Applications B5.9
  Authors: Sriram Venkataraman, Garrett Schneider, Dennis W. Prather, Janusz Murakowski, Shouyan Shi


• Correlation Between Photoreflectance Spectra and Electrical Characteristics of InP/GaAsSb Double Heterojunction Bipolar Transistors B6.2
  Authors: Hiroki Sugiyama, Yasuhiro Oda, Haruki Yokoyama, Takashi Kobayashi, Masahiro Uchida, Noriyuki Watanabe


• Roughness Analysis of Ion Beam Processed GaSb and InSb Surfaces B6.3
  Authors: K. Krishnaswami, D. B. Fenner, S. R. Vangala, C. Santeufemio, M. Grzesik, L. P. Allen, G. Dallas, W. D. Goodhue


• Improved Performance of GaSb-Based MIR Photodetectors through Electrochemical Passivation in Sulphur Containing Solutions B6.8
  Authors: A. Piotrowska, E. Papis, K. Golaszewska, R. Lukasiewicz, E. Kaminska, T. T. Piotrowski, R. Kruszka, A. Kudla, J. Rutkowski, J. Szade, A. Winiarski, A. Wawro, M. Aleszkiewicz


• High Speed Ge Photodetectors on Si Platform for GHz Optical Communications in C+L Bands B6.9
  Authors: Jifeng Liu, Jurgen Michel, Douglas D. Cannon, Wojciech Giziewicz, D. Pan, David T. Danielson, Samerkhae Jongthammanurak, John Yasaitis, Kazumi Wada, Clifton G. Fonstad, Lionel C. Kimerling


• High Quality MPCVD Epitaxial Diamond Film for Power Device Application B7.2
  Authors: Jie Yang, Weixiao Huang, T. P. Chow, James E. Butler


• Prospect for III-Nitride Heterojunction MOSFET Structures and Devices B7.7
  Authors: M. A. L. Johnson, D. W. Barlage, Dave Braddock


• First-principles Calculation of Electron Mobilities in Ultrathin SOI MOSFETs B7.10
  Authors: Matthew H. Evans, Xiaoguang Zhang, John D. Joannopoulos, Sokrates T. Pantelides


• Nickel Silicide Work Function Tuning Study In Metal-Gate CMOS Applications B7.11
  Authors: Jun Yuan, Grant Z. Pan, Yu-Lin Chao, Jason C. S. Woo


• Metal-oxide Semiconductor Field-effect Transistors using Single ZnO Nanowire B8.1
  Authors: Young-Woo Heo, B. S. Kang, L. C. Tien, Y. Kwon, J. R. La-Roche, B. P. Gila, F. Ren, S. J. Pearton, D. P. Norton


• Preparation of Ultraviolet Light Emitting ZnO Nanoparticles Via a Novel Synthesis Route B8.4
  Authors: Yuntao Li, Richard D. Yang, S. Tripathy, H. J. Sue, N. Miyatake, R. Nishimura


• ZnO Spintronics and Nanowire Devices B8.5
  Authors: David P. Norton, Young-Woo Heo, L. C. Tien, M. P. Ivill, Y. Li, B. S. Kang, Fan Ren, J Kelly, A. F. Hebard, Stephen Pearton


• Electrical and Optical Properties of n-type and p-type ZnO B8.6
  Authors: D. C. Look, B. Claflin


• Trophy Award Winner
  Towards p-type doping of ZnO by ion implantation B8.7
  Authors: V. A. Coleman, H. H. Tan, C. Jagadish, S. O. Kucheyev, M. R. Phillips, J. Zou


• New Routes To Metal Chalcogenide Nanostructures B9.2
  Authors: Paul Christian, Paul O’Brien


• Properties of Gallium Selenide Doped with Sulfur B9.3
  Authors: Valeriy G. Voevodin, Svetlana A. Bereznaya, Zoya V. Korotchenko, Aleksandr N. Morozov, Sergey Yu. Sarkisov, Nils C. Fernelius, Jonathan T. Goldstein


• Nominal PbSe nano-islands on PbTe: grown by MBE, analyzed by AFM and TEM B9.4
  Authors: Peter Moeck, Mukes Kapilashrami, Arvind Rao, Kirill Aldushin, Jeahuck Lee, James E. Morris, Nigel D. Browning, Patrick J. McCann


• Optical properties of CdSe and CdTe nanoparticles embedded in SiO₂ films B9.5
  Authors: P. Babu-Dayal, B. R. Mehta, P. D. Paulson


• New Electroluminescence Spectrum from Co-doped ZnS:(Mn, Si) Films Prepared by Chemical Vapor Deposition Combined with Laser Ablation B9.9
  Authors: Makoto Ozawa, Tomomasa Satoh, Takashi Hirate


• Composition Dependence of the Intensity Parameters in TeO2-PbF2 : Tm3+ Glasses B9.10
  Authors: Idris Kabalci, Gonul Ozen, Adnan Kurt, Alphan Sennaroglu


• Growth and Characterization of Single Crystals of &[alpha]-Alq3 for Charge Transport Studies B9.11
  Authors: Ali N. Rashid, Donald C. Craig


• Preparation of Carbon Nano-Materials Using Arc Discharge in Liquid B9.17
  Authors: Y. Suda, H. Kawasaki, T. Ohshima, S. Nakashima, S. Kawazoe, T. Toma


• Dopant Activation in Bulk Germanium and Germanium-on-Insulator B9.18
  Authors: Y. L. Chao, S. Prussin, J. C. S. Woo, R. Scholz


• Electronic and Optical Properties of SiGe Alloys Within First-Principles Schemes B9.20
  Authors: G. Cappellini, G. Satta, M. Palummo, G. Onida


• Ab-Initio Calculations for the Electronic Spectra of Cubic and Hexagonal Boron Nitride B9.21
  Authors: Guido Satta, Giancarlo Cappellini, Valerio Olevano, Lucia Reining


• Transport Properties of Polycrystalline SiGe Thin Films Grown on SiO₂ B9.22
  Authors: Minoru Mitsui, Keisuke Arimoto, Junji Yamanaka, Kiyokazu Nakagawa, Kentarou Sawano, Yasuhiro Shiraki


• Study of Germanium Out-Diffusion in HfO₂ Gate Dielectric of MOS Device on Germanium Substrate B9.26
  Authors: Qingchun Zhang, Nan Wu, L. K. Bera, Chunxiang Zhu


• Site-specific formation of nanoporous silicon on micro-fabricated silicon surfaces B9.27
  Authors: Fung Suong Ou, Laxmikant V. Saraf, Donald R. Baer


• Beam Induced Lateral Epitaxy of GaAs on GaAs/Si Template B9.30
  Authors: Shigeya Naritsuka, Koji Saitoh, Toshiyuki Kondo, Takahiro Maruyama


• Novel Noncontact Thickness Metrology for Partially Transparent and Nontransparent Wafers for Backend Semiconductor Manufacturing B9.31
  Authors: Wojciech J. Walecki, Vitali Souchkov, Kevin Lai, Phuc Van, Manuel Santos, Alexander Pravdivtsev, S. H. Lau, Ann Koo


• Dielectric Properties of Semiconductors by TDDFT in Real-Space and Real-Time Approach B9.33
  Authors: Yasunari Zempo, Nobuhiko Akino


• Pt/Au and W/Pt/Au Schottky Contacts to Bulk n-ZnO B10.1
  Authors: Kelly Ip, Brent Gila, Andrea Onstine, Eric Lambers, Young-Woo Heo, David Norton, Stephen Pearton, Jeffrey LaRoche, Fan Ren


• Preparation of SrS:Ce/ZnO core-shell nanoparticles using reverse micelle method B10.2
  Authors: Yusuke Kusakari, Shinji Ishizaki, Masakazu Kobayashi


• ZnO/GaN Heteroepitaxy B10.3
  Authors: K. W. Jang, D. C. Oh, T. Minegishi, H. Suzuki, T. Hanada, H. Makino, M. W. Cho, T. Yao


• Near band-edge and excitonic behavior of GaAsN epilayers grown by Chemical Beam Epitaxy B11.3
  Authors: J. A. H. Coaquira, L. Bhusal, W. Zhu, A. Fotkatzikis, M. A. Pinault, A. P. Litvinchuk, A. Freundlich


• Charge Coupled Cyclotron Motion of Electrons and Holes in InGaAsN Epitaxial Layers B11.4
  Authors: H. E. Porteanu, O. Loginenko, F. Koch, G. Dumitras, L. Geelhaar, H. Riechert


• Nitrogen Induced Optical Phonon Shift in GaN_yAs_1-y Studied by Raman Scattering B11.5
  Authors: Li-Lin Tay, David J. Lockwood, James A. Gupta


• MBE-Grown GaNAsBi Matched to GaAs with 1.3-&[mu]m Emission Wavelength B11.6
  Authors: Masahiro Yoshimoto, Wei Huang, Kunishige Oe