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• Non-routine Dopant,Impurity and Stoichiometry Charact. of SiGe,SiON and Ultra-low Energy B-implanted Si Using Sec. Ion Mass Spect.
  Authors: Charles W. Magee, Temel H. Buyuklimanli, John W. Marino, Steven W. Novak and M. Alper Sahiner


• Low Temperature Shallow Junction Formation For 70Nm Technology Node And Beyond C1.1
  Authors: John O. Borland


• Electromagnetic Induction Heating For The 70 Nm Cmos Technology Node C1.3
  Authors: Keith Thompson, John H. Booske, R. F. Cooper, Y. B. Gianchandani


• Study Of The Effects Of A Two-Step Anneal On The End Of Range Defects In Silicon C1.4
  Authors: Renata A. Camillo-Castillo, Kevin. S. Jones, Mark E. Law, Leonard M. Rubin


• The Effect of Ge Content in MBE Si_(1-x)Ge_x on the Evolution of {311} Defects C1.6
  Authors: Robert Crosby, Jackie Frazer, K. S. Jones, M. E. Law, A. Nylandsted Larsen, J. Lundsgaard Hansen


• Single-Shot Excimer Laser Annealing and In Process Ellipsometry Analysis for Ultra Shallow Junctions C1.8
  Authors: T. Noguchi, G. Kerrien, T . Sarnet, D. Débarre, J. Boulmer, D. Zahorski, M. Hernandez, C. Defranoux, C. Laviron, M. N. Semeria


• Effect of Laser Thermal Processing on Defect Evolution in Silicon C1.9
  Authors: Erik Kuryliw, Kevin S. Jones, David Sing, Michael J. Rendon, Somit Talwar


• Electrical and Structural Characterization of Boron Implanted Silicon Following Laser Thermal Processing C1.10
  Authors: K. A. Gable, K. S. Jones, M. E. Law, L. S. Robertson, S. Talwar


• Laser Thermal Processing Of Alternate Dopants In Silicon C1.11
  Authors: Mark H. Clark, Kevin S. Jones, Michael Rendon, Kevin A. Gable


• The Influence Of Low Temperature Pre-Annealing On The Defect Removal And The Reduction Of Junction Depth In Excimer Laser Annealing C1.12
  Authors: Sungkweon Baek, Taesung Jang, Hyunsang Hwang


• Optimization of Junctions formed by Solid Phase Epitaxial Regrowth for sub-70nm Cmos C2.1
  Authors: Richard Lindsay, Bartlomiej J. Pawlak, Peter Stolk, Karen Maex


• S/D Engineering For Sub-100 nm Mosfet Using Ultrashallow Junction Formation Technique, Elevated S/D Structure And Salicide Technique C2.2
  Authors: Kazuya Ohuchi, Kanna Adachi, Akira Hokazono, Yoshiaki Toyoshima


• Characterization And Monitoring Of Silicon-On-Insulator Fabrication Processes By High-Resolution X-Ray Diffraction C2.4
  Authors: G. M. Cohen, P. M. Mooney, H. Park, C. Cabral-Jr., E. C. Jones


• Silicon Self-Interstitial Cluster Formation And Dissolution In Soi C2.5
  Authors: A. Saavedra, J. Frazer, D. Wrigley, K. Jones, I. Avci, S. Earles, M. Law, E. Jones


• Current Understanding And Modeling Of Boron-Interstitial Clusters C3.1
  Authors: Peter Pichler


• Electrical Activity of B and As Segregated at the Si-Sio$_{2}$ Interface C3.4
  Authors: Jens Frühauf, Richard Lindsay, Andreas Bergmaier, Wilfried Vandervorst, Georg Tempel, Karen Maex, Günther Dollinger, Frederick Koch


• The Local Structure Of Antimony In High Dose Antimony Implants In Silicon By Xafs And Sims C3.6
  Authors: M. Alper Sahiner, Steven W. Novak, Joe C. Woicik, Yayoi Takamura, Peter B. Griffin, James D. Plummer


• Modeling Of Diffusion And Activation Of Low Energy Arsenic Implants In Silicon C3.7
  Authors: Srinivasan Chakravarthi, P. R. Chidambaram, Charles Machala, Amitabh Jain, Xin Zhang


• Modeling Fermi Level Effects in Atomistic Simulations C3.8
  Authors: Zudian Qin, Scott T. Dunham


• Selective Silicon-Germanium Source/Drain Technology For Nanoscale CMOS C4.1
  Authors: M. C. Öztürk, N. Pesovic, J. Liu, H. Mo, I. Kang, S. Gannavaram


• Substitutional Carbon Incorporation Far Above Solid-Solubility In SiC and SiGeC Layers Grown by Chemical Vapor Deposition using Disilane C4.3
  Authors: M. S. Carroll, J. C. Sturm, E. Napolitani, D. De Salvador, M. Berti


• Structural and optical properties of the multilayer structures formed by Ge sub-critical insertions in a Si matrix C4.4
  Authors: George E. Cirlin, Nikolai D. Zakharov, Peter Werner, Alexander G. Makarov, Andrei F. Tsatsul’nikov, Victor M. Ustinov, Nikolai N. Ledentsov, Vyatcheslav A. Egorov, Ulrich Gösele


• Ab-Initio Calculations To Model Anomalous Fluorine Behavior C4.5
  Authors: Milan Diebel, Scott T. Dunham


• Effect Of Fluorine On The Diffusion Of Boron In Amorphous Silicon C4.6
  Authors: J. M. Jacques, L. S. Robertson, K. S. Jones, Joe Bennett, Mike Rendon


• Ab-Initio Pseudopotential Calculations Of Phosphorus Diffusion In Silicon C4.7
  Authors: Xiang-Yang Liu, Wolfgang Windl, Michael P. Masquelier


• Modeling of TED and Point Defect Parameter Extraction C4.8
  Authors: Heidi Meyer, Scott T. Dunham


• Simulation Of Transient Enhanced Diffusion In Silicon Taking Into Account Ostwald Ripening Of Defects C5.1
  Authors: Masashi Uematsu


• A Model For Boron Ted In Silicon: Full Couplings Of Dopant With Free And Clustered Interstitials C5.2
  Authors: F. Boucard, D. Mathiot, E. Guichard, P. Rivallin


• Complete Suppression Of The Transient Enhanced Diffusion Of B Implanted In Preamorphized Silicon By Interstitial Trapping In A Spatially Separated C-Rich Layer C5.4
  Authors: E. Napolitani, A. Coati, D. De-Salvador, A. Carnera, S. Mirabella, S. Scalese, F. Priolo


• Self-interstitials and substitutional C in silicon: Interstitial- trapping and C- clustering C5.5
  Authors: S. Mirabella, S. Scalese, A. Terrasi, F. Priolo, A. Coati, D. De Salvador, E. Napolitani, M. Berti


• Modeling Of Self-Interstitial Diffusion In Implanted Silicon Containing Interstitial Traps C5.6
  Authors: D. De-Salvador, A. Mattoni, E. Napolitani, A. V. Drigo, S. Mirabella, F. Priolo


• Thermal Evolution Of Extrinsic Defects In Ion Implanted Silicon: Current Understanding And Modelling C5.7
  Authors: Fuccio Cristiano, Benjamin Colombeau, Bernadette de Mauduit, Caroline Bonafos, Gerard Benassayag, Alain Claverie


• Annealing Behavior Of Locally Confined Dislocation Loops Under Inert And Oxidizing Ambient C5.8
  Authors: C. Tsamis, D. Skarlatos, I. Raptis, D. Tsoukalas, P. Calvo1, B. Colombeau1, F. Cristiano, A. Claverie


• Modeling Dislocation Loop Nucleation And Evolution In Germanium, Arsenic And Boron Implanted Silicon C5.9
  Authors: Ibrahim Avci, Mark E. Law


• Experimental study on the mechanism of carbon diffusion in silicon C5.10
  Authors: N. E. B. Cowern, B. Colombeau, F. Roozeboom, M. Hopstaken, H. Snijders, P. Meunier, W. Lerch


• Profile changes and self-sputtering during low-energy ion implantation C7.2
  Authors: W. Vandervorst, T. Janssens, B. Brijs, R. Lindsay, E. J. H. Collart, David A. Kirkwood, G. Mathot, G. Terwagne


• Junction and Profile Analysis using Carrier Illumination C7.3
  Authors: T. Clarysse, W. Vandervorst, R. Lindsay, P. Borden, E. Budiarto, J. Madsen, R. Nijmeijer


• Calibration Of Phosphorus Implantation Dose In Silicon By Radiochemical Neutron Activation Analysis C7.4
  Authors: Rick L. Paul, David S. Simons


• Pulsed Force-Scanning Spreading Resistance Microscopy (Pf-Ssrm) For High Spatial Resolution 2D-Dopant Profiling C7.7
  Authors: P. Eyben, M. Fouchier, P. Albart, J. Charon-Verstappen, W. Vandervorst


• Damage And Dopant Distributions Produced By Ultra Shallow B And As Implants Into Si At Different Temperatures Characterized By Medium Energy Ion Scattering C7.8
  Authors: J. A. van-den-Berg, D. G. Armour, S. Zhang, S. Whelan, M. Werner, E. H. J. Collart, R. D. Goldberg, P. Bailey, T. C. Q. Noakes