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• Low Temperature (75 oC) Hydrogenated Nanocrystalline Silicon Films grown by Conventional Plasma Enhanced Chemical Vapor Deposition for Thin Film Transistors


• Reel-to- Reel Cassette Cluster Tool System for Thin Film Transistor and Four Terminal Solar Cell Fabrication


• Temperature Dependent Carrier Transport in Single-Crystalline Si TFTs inside a Location-Controlled Grain


• Fabrication and Characterization of a Germanium Quantum-dot Transistor Formed by Selective Oxidation of SiGe/Si-on-Insulator


• 100-nm Channel Length a-Si:H Vertical Thin Film Transistors


• A SIMPLE EXPLANATION ON THE CRYSTALLIZATION KINETICS OF A CW LASER CRYSTALLIZATION OF AMORPHOUS SILICON


• METASTABLE DEFECTS IN a-Si:H and a-Ge:H: THE ROLE OF HYDROGEN


• UNTITLED - [A1_1-H1_1.pdf]


• Absence of enhanced stability in deuterated amorphous silicon thin film transistors A2.2
  Authors: Shufan Lin, Andrew J. Flewitt, William I. Milne, Ralf B. Wehrspohn, Martin J. Powell


• Study of 3-MeV Electron Radiation Damage in Amorphous Silicon with TRMC A2.3
  Authors: A. Klaver, J. M. Warman, M. P. de-Haas, J. W. Metselaar, R. A. C. M. van-Swaaij


• Tritium Induced Defects in Amorphous Silicon A2.4
  Authors: J. Whitaker, J. Viner, S. Zukotynski, E. Johnson, P. C. Taylor, P. Stradins


• Evolution of D⁰ and non-D⁰ Light Induced Defect States in a-Si:H Materials and Their Respective Contribution to Carrier Recombination A2.5
  Authors: J. M. Pearce, J. Deng, V. Vlahos, R. W. Collins, C. R. Wronski, J. Whitaker, P. C. Taylor


• H evolution from nano-crystalline silicon- comparison of simulation and experiment A2.6
  Authors: R. Biswas, B. C. Pan


• Gate Overlapped Lightly Doped Drain Poly-Si TFTs With 45 ° Tilt Implant For Source and Drain A4.1
  Authors: Jae-Hoon Lee, Moon-Young Shin, HeeSun Shin, Woo-Jin Nam, Min-Koo Han


• Location Control of Crystal Grains in Excimer Laser Crystallization of Silicon Thin Films for Single-Grain TFTs A4.2
  Authors: Hideya Kumomi, Hiroaki Wakiyama, Gou Nakagawa, Kenji Makihira, Tanemasa Asano


• Silicon-Hydrogen Bonds in Boron and Phosphorous Doped Polycrystalline Silicon Thin Films A4.4
  Authors: R. Saleh, N. H. Nickel


• CW Argon-ion laser initiated aluminum induced crystallization of amorphous silicon thin films A4.5
  Authors: Sampath K. Paduru, Husam H. Abu-safe, Hameed A. Naseem, Adnan Al-Shariah, William D. Brown


• Monolithically Integrated p- and n- Channel Thin Film Transistors of Nanocrystalline Silicon on Plastic Substrates A4.6
  Authors: I-Chun Cheng, Sigurd Wagner


• Fabrication and Characterization of Hydrogenated Amorphous Silicon Bipolar Thin Film Transistor (B-TFT) A4.7
  Authors: Yue Kuo, Yu Lei, Helinda Nominanda


• Bottom-Gate TFTs with Channel Layer Grown by Pulsed PECVD Technique A4.8
  Authors: David J. Grant, Czang-Ho Lee, Arokia Nathan, Ujjwal K. Das, Arun Madan


• Accelerated Stress Testing of a-Si:H TFTs for AMOLED Displays A4.11
  Authors: Kapil Sakariya, Clement K. M. Ng, I-Heng Huang, Afrin Sultana, Sheng Tao, Arokia Nathan


• The p-channel a-Si:H Thin Film Transistor with Plasma Etched Copper Electrodes A4.12
  Authors: Helinda Nominanda, Guojun Liu, Hyun Ho Lee, Yue Kuo


• Statistical Modeling of Grain-Enhanced Polysilicon Thin-Film Transistor in Consideration of Grain Boundary Distribution A4.13
  Authors: C. F. Cheng, M. C. Poon, C. W. Kok, M. Chan


• Intrinsic and Doped μc-Si:H TFT Layers using 13.56 MHz PECVD at 250 ^oC A4.14
  Authors: Czang-Ho Lee, Denis Striakhilev, Arokia Nathan


• Low-Temperature (<150°C) Doping Techniques for Polysilicon TFT's A4.15
  Authors: W. S. Hong, J. M. Kim, S. H. Han, Y. H. Lee, Y. W. Kim, S. H. Lee, D. Y. Kim


• Low Temperature a-Si:H TFTs with a SiO₂ Gate Insulator Deposited by Liquid Phase Deposition A4.18
  Authors: Richard B. M. Cross, David P. Oxley, Meenakshi Manhas, Ekkanath M. Sankara Narayanan


• Metal induced crystallization of SiGe at 370°C for monolithically integrated MEMS applications A4.19
  Authors: Sherif Sedky, Kris Baert, Chris Van-Hoof, Yi Wang, Omer Van-Der-Biest, Ann Witvrouw


• Aluminum-Induced Crystallization of PECVD Amorphous Silicon. A4.20
  Authors: Kenneth Jenq, Shawn S. Chang, Yaguang Lian, Grant Z. Pan, Yahya Rahmat-Samii


• Solar Cells on Foreign Substrates Using Poly-Si Thin Films by Metal-Induced Growth A4.21
  Authors: Chunhai Ji, Wayne A. Anderson


• The effect of substrate temperature and interface oxide layer on aluminum induced crystallization of sputtered amorphous silicon A4.22
  Authors: Maruf Hossain, Husam Abu-Safe, Marwan Barghouti, Hameed Naseem, William D. Brown


• Initial Interaction of Crystalline Al /Amorphous Si Bilayer during Annealing A4.23
  Authors: Yonghao Zhao, Jiangyong Wang, Eric J. Mittemeijer


• In-situ Aluminum-Induced Crystallization of Si Thin-Films on Glass Substrates above the Eutectic Temperature using HW-CVD A4.24
  Authors: Ozgenc Ebil, Roger Aparicio, Robert Birkmire


• Increase of temperature and crystallinity during electrical switching in microcrystalline silicon A4.25
  Authors: Jian Hu, Paul Stradins, Howard M. Branz, Qi Wang, J. R. Weinberg-Wolf, E. C. T. Harley, Chris Lawyer, Brittany Huie, Daxing Han


• Modeling of Aluminum Induced Lateral Crystallization of Hydrogenated Amorphous Silicon A4.26
  Authors: Mohammad Saad Abbasi, Husam Abu-Safe, Hameed Naseem, W. D. Brown


• Development of a Porous Silicon Product for Small Molecule Mass Spectrometry A4.28
  Authors: Grace Credo, Hillary Hewitson, Christopher Benevides, Edouard S. P. Bouvier


• Amorphous Si_1-YGe_Y:H,F films obtained by Low Frequency PECVD for uncooled microbolometers A4.29
  Authors: R. Ambrosio, A. Torres, A. Kosarev, A. S. Abramov, A. Heredia, M. Landa, M. Garcia


• High Current Density in μc-Si PECVD Diodes for Low Temperature Applications A4.30
  Authors: Patricia A. Beck, Janice H. Nickel, Peter G. Hartwell


• Si Wire Light Emission Changes During Si/SiO_x Interface Formation A4.35
  Authors: F. G. Becerril-Espinoza, T. V. Torchynska, M. Morales Rodríguez, L. Khomenkova, L. V. Scherbina


• About the luminescence mechanisms of composite a-Si:nc-Si system obtained by ion-beam amorphization in the wide dose region A4.36
  Authors: David I. Tetelbaum, Alexander A. Ezhevskii, Alexey N. Mikhaylov, Mikhail Yu. Lebedev, Yuliya A. Mendeleva, Roman G. Ershov, Sergey V. Morozov


• Correlation Between Surface Charge Accumulation and Excitation Intensity Dependent Red-Shifted Micro-Photoluminescence of Si-Implanted Quartz With Embedded Si Nanocrystals A4.37
  Authors: Chun-Jung Lin, Kuo-Cheng Yu, Hao-Chung Kuo, Miao-Jia Ou-yang, Gong-Ru Lin


• Buffer-layer Effect on Mixed-Phase Cells Studied by Micro-Raman and Photoluminescence Spectroscopy A4.38
  Authors: Andrea Hilchey, Chris Lawyer, Keda Wang, Daxing Han, Baojie Yan, Guozhen Yue, Jeffrey Yang, Subhendu Guha


• Reversible Ordering of a-Si_1-xGe_x by the Combined Effect of Light and Temperature A4.39
  Authors: P. Martín, A. Torres, J. Jiménez, A. Rodríguez, J. Sangrador, T. Rodríguez


• Evaluation of an alternative technique for the fabrication of direct detector X-ray imagers: spray pyrolysis of lead iodide and mercury iodide A4.40
  Authors: J. F. Condeles, J. C. Ugucioni, M. Mulato


• Are the Current Models Helpful to Understanding Staebler-Wronski Degradation? A4.41
  Authors: Bolko von-Roedern


• Two terminal large area single and double p-i-n devices for image and color recognition A4.43
  Authors: P. Louro, M. Vieira, A. Fantoni, M. Fernandes, C. Nunes-de-Carvalho, G. Lavareda


• A real-time optical signal and image processing p-i-n/p-i-n device A4.44
  Authors: M. Vieira, P. Louro, M. Fernandes, A. Fantoni, C. Mendes, J. Martins


• Detection Limits of a nip a-Si:H Linear Array Position Sensitive Detector A4.45
  Authors: R. Martins, D. Costa, H. Águas, F. Soares, A. Marques, I. Ferreira, P. Borges, E. Fortunato


• Performance Analysis of a-Si:H Detectors Deposited on CMOS Chips. A4.46
  Authors: C. Miazza, S. Dunand, N. Wyrsch, A. Shah, N. Blanc, R. Kaufmann, L. Cavalier


• In situ observation of silicon epitaxy breakdown with real-time spectroscopic ellipsometry A5.1
  Authors: Charles W. Teplin, Dean H. Levi, Qi Wang, Eugene Iwaniczko, Kim M. Jones, Howard M. Branz


• Comparison of Phase Diagrams for vhf and rf Plasma-Enhanced Chemical Vapor Deposition of Si:H Films A5.2
  Authors: G. M. Ferreira, A. S. Ferlauto, J. M. Pearce, C. R. Wronski, C. Ross, R. W. Collins


• Phase diagram and microstructure of microcrystalline and amorphous silicon: a numerical growth simulation A5.3
  Authors: Julien Bailat, Evelyne Vallat-Sauvain, André Vallat, Arvind Shah


• Surface Processes During Growth of Hydrogenated Amorphous Silicon A5.5
  Authors: Eray S. Aydil, Sumit Agarwal, Mayur Valipa, Saravanapriyan Sriraman, Dimitrios Maroudas


• Influence of the Distribution of Tail States in a-Si:H on the Field Dependence of Carrier Drift Mobilities A5.6
  Authors: Monica Brinza, Evguenia V. Emelianova, André Stesmans, Guy J. Adriaenssens


• Interpretation of Transient Photocurrents in Coplanar and Sandwich PIN Microcrystalline Silicon Structures A5.7
  Authors: Steve Reynolds, Vladimir Smirnov, Charlie Main, Friedhelm Finger, Reinhard Carius


• The Role of Charged Gap States in Light-Induced Degradation of Single Junction a-Si:H Solar Cells A5.8
  Authors: M. Zeman, V. Nádaždy, J. W. Metselaar


• Femtosecond Far-Infrared Studies of Photoconductivity in a-Si:H and a-SiGe:H A5.9
  Authors: A. V. V. Nampoothiri, S. L. Dexheimer


• Excimer-laser growth of Si large-grain arrays A6.2
  Authors: Masakiyo Matsumura


• Amorphous and Microcrystalline Silicon based Photovoltaic A6.4
  Authors: Subhendu Guha


• Amorphous Silicon based Solar Cell Technologies: Status, Challenges, and Opportunities A7.5
  Authors: Rajeewa R. Arya


• The status of and challenges in CdTe thin-film solar-cell technology A7.6
  Authors: Alvin D. Compaan


• High-Rate Plasma Process for Microcrystalline Silicon: Over 9% Efficiency Single Junction Solar Cells A8.1
  Authors: Takuya Matsui, Akihisa Matsuda, Michio Kondo


• Defect Densities, Diffusion Lengths and Device Physics in Nanocrystalline Si:H Solar Cells A8.2
  Authors: Vikram L. Dalal, Puneet Sharma, David Staab, Max Noack, Keqin Han


• Materials and Interface Optimization of Heterojunction Silicon (HIT) Solar Cells Using In-Situ Real-Time Spectroscopic Ellipsometry A8.3
  Authors: D. H. Levi, C. W. Teplin, E. Iwaniczko, R. K. Ahrenkiel, H. M. Branz, M. R. Page, Y. Yan, Q. Wang, T. H. Wang


• Protocrystalline Silicon at High Rate from Undiluted Silane A8.4
  Authors: R. E. I. Schropp, M. K. van-Veen, C. H. M. van-der-Werf, D. L. Williamson, A. H. Mahan


• Microstructure Evolution with Thickness and Hydrogen Dilution Profile in Microcrystalline Silicon Solar Cells A8.5
  Authors: Baojie Yan, Guozhen Yue, Jeffrey Yang, Subhendu Guha, D. L. Williamson, Daxing Han, Chun-Sheng Jiang


• Understanding the structure of Si nanoclusters in a/nc-Si:H films using spherical aberration-corrected transmission electron microscopy A8.7
  Authors: Christopher R. Perrey, Siri S. Thompson, Markus Lentzen, Uwe Kortshagen, C. Barry Carter


• Characterization of the Bulk Recombination in Hydrogenated Amorphous Silicon Solar Cells A8.8
  Authors: J. Deng, J. M. Pearce, V. Vlahos, R. W. Collins, C. R. Wronski


• Electronic Properties of RF Glow Discharge Intrinsic Microcrystalline Silicon near the Amorphous Silicon Phase Boundary A8.9
  Authors: James J. Gutierrez, Adam F. Halverson, Eric D. Tweeten, J. David Cohen, Baojie Yan, Jeffrey C. Yang, Subhendu Guha


• Hole Drift-Mobility Measurements and Multiple Trapping in Microcrystalline Silicon A8.10
  Authors: T. Dylla, F. Finger, E. A. Schiff


• A Phase Diagram for Morphology and Properties of Low Temperature-Deposited Polycrystalline Silicon Grown by Hot Wire Chemical Vapor Deposition A8.11
  Authors: Christine E. Richardson, Maribeth S. Mason, Harry A. Atwater


• Identification of Possible Bonding Sites for Post Deposition Oxygen Absorption in Microcrystalline Silicon A9.2
  Authors: L. M. Gedvilas, A. H. Mahan


• Optical and Electronic Characterization of a-SiGe:H Thin Films Prepared by a Novel Hollow Cathode Deposition Technique A9.4
  Authors: R. J. Soukup, N. J. Ianno, Scott A. Darveau, Christopher L. Exstrom


• Extension of the Constant Photocurrent Method to Determine Densities of Occupied and Unoccupied Localised States A9.5
  Authors: Charlie Main, Steve Reynolds, Ivica Zrinšcak, Amar Merazga


• Electric-Field Dependence of Photocarrier Properties in the Steady-State Photocarrier Grating Experiment A9.7
  Authors: R. Brüggemann, R. I. Badran


• Transient and Modulated Photoconductivity in Microcrystalline Silicon A9.8
  Authors: R. Brüggemann, C. Longeaud, J.P. Kleider


• Metastability in Undoped Microcrystalline Silicon Thin Films Deposited by HWCVD A9.10
  Authors: S. K. Persheyev, K. A. O’Neill, S. Anthony, M. J. Rose, V. Smirnov, S. Reynolds


• The Influence of Light-Soaking and Atmospheric Adsorption on Microcrystalline Silicon Films studied by Coplanar Transient Photoconductivity A9.11
  Authors: V. Smirnov, S. Reynolds, F. Finger, C. Main, R. Carius


• Surface Potential and Surface Photovoltage of Oxide and Nitride coated multicrystalline Silicon Solar Cells using a Scanning Kelvin Probe A9.12
  Authors: Iain D. Baikie


• External rf substrate biasing during a-Si:H film growth using the expanding thermal plasma technique A9.21
  Authors: A. H. M. Smets, W. M. M. Kessels, M. C. M. van-de-Sanden


• High-quality hydrogen diluted SiN_x films deposited by hot-wire chemical vapor deposition A9.23
  Authors: Fengzhen Liu, Lynn Gedvilas, Brian Keyes, Errol Sanchez, Shulin Wang, Qi Wang


• New ultrahigh vacuum setup and advanced diagnostic techniques for studying a-Si:H film growth by radical beams A9.24
  Authors: J. P. M. Hoefnagels, E. Langereis, M. C. M. van-de-Sanden, W. M. M. Kessels


• Structural and Electronic Properties of SiCl₄-based Microcrystalline Silicon Films A9.26
  Authors: Wolfhard Beyer, Reinhard Carius, Michael Lejeune, Uwe Zastrow


• Growth and Characterization of Poly-SiGe prepared by Reactive Thermal CVD A9.28
  Authors: Jianjun Zhang, Kousaku Shimizu, Jun-ichi Hanna


• Effects of Facet Growth and Nucleation on Microcrystalline Silicon by Numerical Model A9.29
  Authors: Yasuyuki Kobayashi, Koji Satake


• Growth of Hydrogenated Microcrystalline Silicon (µc-Si:H) Films by HWCVD Using a Graphite Catalyzer A9.30
  Authors: D. M. Bhusari, P. Kumar, M. Kupich, B. Schroeder


• Formation of periodic grain boundary in an Si thin film crystallized by a linearly polarized Nd:YAG pulse laser w