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• Materials Challenges for CMOS Junctions C1.1
  Authors: William J. Taylor, Michael J. Rendon, Eric Verret, Jack Jiang, Cristiano Capasso, Dave Sing, Jen-Yee Nguyen, James Smith, Eric Luckowski, Arturo Martinez, Jamie Schaeffer, Phil Tobin


• Device Characterization of Ultra-Shallow Junctions Formed by fRTP Annealing C1.3
  Authors: A. Satta, L. Lindsay, S. Severi, K. Henson, K. Maex, S. McCoy, J. Gelpey, K. Elliott


• Solid Phase Epitaxy process integration on 50-nm PMOS devices: Effects of defects on chemical and electrical characteristics of ultra shallow junctions C1.4
  Authors: R. El-Farhane, C. Laviron, F. Cristiano, N. Cherkashin, P. Morin, M. Juhel, P. Stolk, F. Arnaud, A. Pouydebasque, F. Wacquant, D. Lenoble, A. Halimaoui


• Applications of Ni-based Silicides to 45 nm CMOS and Beyond C2.1
  Authors: Jorge A. Kittl, Anne Lauwers, Oxana Chamirian, Malgorzata A. Pawlak, Mark Van-Dal, Amal Akheyar, Muriel De-Potter, Anil Kottantharayil, Geoffrey Pourtois, Richard Lindsay, Karen Maex


• Ni-silicided Deep Source / Drain Junctions formed by Solid Phase Epitaxial Regrowth C2.2
  Authors: Anne Lauwers, Richard Lindsay, Kirklen Henson, Simone Severi, Amal Akheyar, Bartek J. Pawlak, Muriel de-Potter, Karen Maex


• Recessed and Epitaxially Regrown SiGe(B) Source/Drain Junctions with Ni salicide contacts C2.3
  Authors: Christian Isheden, Per-Erik Hellström, Henry H. Radamson, Mikael Östling


• Formation and Morphology Evolution of Nickel Germanides on Ge (100) under Rapid Thermal Annealing C2.4
  Authors: K. Y. Lee, S. L. Liew, S. J. Chua, D. Z. Chi, H. P. Sun, X. Q. Pan


• Erbium-Silicided Source/Drain Junction Formation by Rapid Thermal Annealing Technique for Decananometer-Scale Schottky Barrier Metal-Oxide-Semiconductor Field-Effect Transistors C2.5
  Authors: Moongyu Jang, Yarkyeon Kim, Jaeheon Shin, Kyoungwan Park, Seongjae Lee


• Process Modeling for Advanced Devices C3.1
  Authors: Mark E. Law, Kevin S. Jones, Ljubo Radic, Robert Crosby, Mark Clark, Kevin Gable, Carrie Ross


• Simultaneous Phosphorus and Si Self-Diffusion in Extrinsic, Isotopically Controlled Silicon Heterostructures C3.3
  Authors: Hughes H. Silvestri, Hartmut A. Bracht, Ian D. Sharp, John Hansen, Arne Nylandsted-Larsen, Eugene E. Haller


• Boron Diffusion and Silicon Self-Interstitial Recycling between SiGeC layers C3.5
  Authors: M. S. Carroll1, J. C. Sturm


• Current Understanding and Modeling of B Diffusion and Activation Anomalies in Preamorphized Ultra-Shallow Junctions C3.6
  Authors: B. Colombeau, A. J. Smith, N. E. B. Cowern, B. J. Pawlak, F. Cristiano, R. Duffy, A. Claverie, C. J. Ortiz, P. Pichler, E. Lampin, C. Zechner


• On the ″Life″ of {113} Defects C3.7
  Authors: N. Cherkashin, P. Calvo, F. Cristiano, B. de-Mauduit, A. Claverie


• Doping and Mobility Profiles in Defect-Engineered Ultrashallow Junctions: Bulk and SOI C3.8
  Authors: A. J. Smith, B. Colombeau, R. Gwilliam, E. Collart, N. E. B. Cowern, B. J. Sealy


• Simulation and Electron Energy-Loss Spectroscopy of Electron Beam Induced Point Defect Agglomerations in Silicon C3.9
  Authors: Nathan G. Stoddard, Gerd Duscher, Wolfgang Windl, George A. Rozgonyi


• Investigation of Fluorine effect on the Boron diffusion by mean of Boron redistribution in shallow delta-doped layers C3.10
  Authors: A. Halimaoui, J. M. Hartmann, C. Laviron, R. El-Farhane, F. Laugier


• Suppression of Ni Silicide Formation by Se Passivation of Si(001) C4.1
  Authors: Janadass Shanmugam, Michael Coviello, Darshak Udeshi, Wiley P. Kirk, Meng Tao


• Study of Ni(Pt) germanosilicides Formation on Fully-strained Si_0.9Ge_0.1 and Si_0.899Ge_0.1C_0.001 by Raman spectroscopy C4.2
  Authors: J. Y. Y. Chaw, K. L. Pey, P. S. Lee, D. Z. Chi, J. P. Liu


• Study of Ge Out-diffusion During Nickel (Platinum ~ 0, 5, 10 at.%) Germanosilicide Formation C4.3
  Authors: L. J. Jin, D. A. Antoniadis, A. J. Pitera, K. L. Pey, W. K. Choi, M. L. Lee, D. Z. Chi, E. A. Fitzgerald


• Ni Silicide Morphology on Small Features C4.4
  Authors: Oxana Chamirian, Anne Lauwers, Jorge A. Kittl, Mark Van-Dal, Muriel De-Potter, Christa Vrancken, Richard Lindsay, Karen Maex


• Effects of Alloying on Properties of NiSi for CMOS Applications C4.5
  Authors: Mark van-Dal, Amal Akheyar, Jorge A. Kittl, Oxana Chamirian, Muriel De-Potter, Caroline Demeurisse, Anne Lauwers, Karen Maex


• Influence of Atomic Hydrogen on Nickel Silicide Formation C4.6
  Authors: A. Vengurlekar, Satheesh Balasubramanian, S. Ashok, N. D. Theodore, D. Z. Chi


• Effect of Ge-rich Si_1-zGe_z segregation on the morphological stability of NiSi_1-uGe_u films formed on strained (001) Si_0.8Ge_0.2 epilayer C4.7
  Authors: H. B. Yao, D. Z. Chi, S. Tripathy, S. Y. Chow, W. D. Wang, S. J. Chua, H. P. Sun, X. Q. Pan


• Growth of Epitaxial CoSi₂ from Cobalt Carbonyl on Si(100) Substrate C4.9
  Authors: R. Singanamalla, D. W. Greve, K. Barmak


• The Use of SiGe Barriers During the Formation of p⁺ Shallow Junctions by Ion Implantation C4.11
  Authors: Phillip E. Thompson, Joe Bennett, Susan Felch


• Strain Relaxation of Ion-implanted Strained Silicon on Relaxed SiGe C4.12
  Authors: R. T. Crosby, K. S. Jones, M. E. Law, A. F. Saavedra, J. L. Hansen, A. N. Larsen, J. Liu


• Fabrication of p+/n Ultra Shallow Junctions (USJ) in silicon by excimer laser doping from spin-on glass sources C4.13
  Authors: S. Coutanson, E. Fogarassy, J. Venturini


• Advanced Thermal Processing of Semiconducting Materials Using Flash Lamp Annealing C4.16
  Authors: W. Skorupa, D. Panknin, M. Voelskow, W. Anwand, The-European-FLASiC Consortium, T. Gebel, R. A. Yankov, Silke Paul, Wilfried Lerch


• The Effect of Oxide Trenches on Defect Formation and Evolution in Ion-Implanted Silicon C4.19
  Authors: Nina Burbure, Kevin S. Jones


• Millisecond Microwave Annealing: Reaching the 32 nm Node C5.3
  Authors: Keith Thompson, John H. Booske, R. L. Ives, John Lohr, Yurii A. Gorelov, Ken Kajiwara


• Activation, Diffusion and Defect Analysis of a Spike Anneal Thermal Cycle C5.4
  Authors: Silke Paul, Wilfried Lerch, Xavier Hebras, Nikolay Cherkashin, Fuccio Cristiano


• Technology Computer Aided Design of Ultra-shallow Junctions in Si Devices Formed by Laser Annealing Processes C5.5
  Authors: Antonino La-Magna, Paola Alippi, Vittorio Privitera, Guglielmo Fortunato, Marco Camalleri, Bengt Svensson


• Ultra-Shallow Junction Formation Technology from the 130 to the 45 nm Node C5.6
  Authors: Amitabh Jain


• Electrical profiles of ultra-low energy antimony implants in silicon C5.7
  Authors: T. Alzanki, R. Gwilliam, N. Emerson, J. Sealy, E. Collart


• Optimization of Fluorine Co-implantation for PMOS Source and Drain Extension Formation for 65nm Technology Node C5.8
  Authors: H. Graoui, M. Hilkene, B. McComb, M. Castle, S. Felch, N. E. B. Cowern, A. Al-Bayati, A. Tjandra, M. A. Foad


• Suppression of Boron Diffusion by Fluorine Implantation in Preamorphized Silicon C5.9
  Authors: Giuliana Impellizzeri, José H. R. dos-Santos, Salvatore Mirabella, Francesco Priolo, Enrico Napolitani, Alberto Carnera


• Post-Anneal Stress Reduction of 200 mm Silicon Wafers in Single Wafer Rapid Annealing C5.10
  Authors: Tsuyoshi Setokubo, Eiichi Nakano, Kazuo Aizawa, Hidekazu Miyoshi, Jiro Yamamoto, Takashi Fukada, Woo Sik Yoo


• Modeling Atomistic Ion-Implantation and Diffusion for Simulating Intrinsic Fluctuation in MOSFETs arising from Line-Edge Roughness C6.1
  Authors: Masami Hane, Takeo Ikezaway, Tatsuya Ezaki


• Indium in silicon: interactions with native defects and with C impurities C6.3
  Authors: P. Alippi, A. La-Magna, S. Scalese, V. Privitera


• Accurate Monte Carlo Simulation of Ion Implantation into Arbitrary 1D/2D/3D Structures for Silicon Technology C6.5
  Authors: Shiyang Tian, Victor Moroz, Norbert Strecker


• Boron-Interstitial Cluster Kinetics: Extraction of Binding Energies from Dedicated Experiments C7.1
  Authors: Christophe J. Ortiz, Peter Pichler, Volker Häublein, Giovanni Mannino, Silvia Scalese, Vittorio Privitera, Sandro Solmi, Wilfried Lerch


• Lattice Strain and Composition of Boron-Interstitial Clusters in Crystalline Silicon C7.2
  Authors: D. De-Salvador, G. Bisognin, E. Napolitani, L. Aldegheri, A. V. Drigo, A. Carnera, S. Mirabella, E. Bruno, G. Impellizzeri, F. Priolo


• Atomistic Analysis Of The Role Of Silicon Interstitials In Boron Cluster Dissolution C7.3
  Authors: Maria Aboy, Lourdes Pelaz, Luis A. Marqués, Pedro López, Juan Barbolla


• BIC Formation and Boron Diffusion in Relaxed Si_0.8Ge_0.2 C7.4
  Authors: R. T. Crosby, L. Radic, K. S. Jones, M. E. Law, P. E. Thompson, J. Liu, M. Klimov, V. Craciun


• The Effect of Photoresist Outgassing on Boron Clustering and Diffusion in Low Energy BF₂⁺ Ion Implantation C7.5
  Authors: Peter Kopalidis, Serguei Kondratenko


• Enhancement of Boron Activation in Shallow Junctions by Hydrogen C7.6
  Authors: A. Vengurlekar, S. Ashok, C. E. Kalnas, N. D. Theodore


• Interactions of Indium, Arsenic and Carbon in silicon using the pseudopotential technique C8.4
  Authors: M. Shishkin, A. Yan, M. M. De-Souza


• Behavior of Si Interstitials and Boron-Interstitial Pairs at the Si/SiO₂ Interface C8.5
  Authors: Taras A. Kirichenko, Decai Yu, Sanjay K. Banerjee, Gyeong S. Hwang


• Role of C and Ge in the electrical activation of In implanted in silicon C8.7
  Authors: S. Scalese, V. Privitera, M. Italia, A. La-Magna, P. Alippi, L. Renna


• Study of BF₂ Ion Implantation Into Crystalline Silicon : Influence of Fluorine on Boron Diffusion C8.9
  Authors: Lilya Ihaddadene-Lecoq, Jerome Marcon, Kaouther Ketata


• Concentration Dependence of Boron-Interstitial Cluster (BIC) Formation in Silicon-on-Insulator (SOI) C8.11
  Authors: A. F. Saavedra, K. S. Jones, L. Radic, M. E. Law, K. K. Chan


• Diffusion of Fluorine at High Concentration in Silicon: Experiments and Models C8.13
  Authors: Robert R. Robison, Antonio F. Saavedra, Mark E. Law


• Modeling B clustering in Si and SiGe C8.14
  Authors: Ljubo Radic, Aaron D. Lilak, Mark E. Law


• The Effect of Fluorine Implantation on Boron Diffusion in Metastable Si_0.86 Ge_0.14 C8.15
  Authors: Huda A. W. A. El-Mubarek, Yun Wang, Janet M. Bonar, Peter Hemment, Peter Ashburn


• Vibrational Spectra of Nitrogen-Oxygen Defects in Nitrogen Doped Silicon using Density Functional Theory C8.18
  Authors: F. Sahtout Karoui, A. Karoui, N. Inoue, G. A. Rozgonyi


• Atomistic Modeling and Simulation of Impurity Atmosphere in Silicon and Edge Dislocation Locking Effects C8.19
  Authors: A. Karoui


• Atomistic Modeling of Ion Beam Induced Defects in Si: From Point Defects to Continuous Amorphous Layers C10.1
  Authors: Lourdes Pelaz, Luis A. Marqués, Pedro López, Iván Santos, María Aboy, Juan Barbolla


• Dopant diffusion in amorphous silicon C10.2
  Authors: R. Duffy, V. C. Venezia, A. Heringa, M. J. P. Hopstaken, G. C. J. Maas, T. Dao, Y. Tamminga, F. Roozeboom


• Enhanced Boron Diffusion in Amorphous Silicon C10.3
  Authors: J. M. Jacques, N. Burbure, K. S. Jones, M. E. Law, L. S. Robertson, D. F. Downey, L. M. Rubin, J. Bennett, M. Beebe, M. Klimov


• The role of stress on the shape of the amorphous-crystalline interface and mask-edge defect formation in ion-implanted silicon C10.4
  Authors: Carrie E. Ross, Kevin S. Jones


• Channel engineering and junction overlap issues for ultra-shallow junctions formed by SPER in the 45 nm CMOS technology node C10.5
  Authors: Simone Severi, Kirklen Henson, Richard Lindsay, Anne Lauwers, Bartek J. Pawlak, Radu Surdeanu, K. De Meyer


• Measurements of Ultra-shallow Junction (USJ) Sheet Resistance with a Non-Penetrating Four Point Probe C11.6
  Authors: Robert J. Hillard, Robert G. Mazur, William J. Alexander, C. Win Ye, Mark C. Benjamin, John O. Borland


• A photothermal method of simultaneous determination of ultra-shallow junction depth and abruptness C11.7
  Authors: Alex Salnick, Lena Nicolaides, Jon Opsal, Amitabh Jain, Duncan Rogers, Lance Robertson


• Non-Contact Electrical Measurements of Sheet Resistance and Leakage Current Density for Ultra-Shallow (and Other) Junctions C11.9
  Authors: Vladimir N. Faifer, Michael I. Current, Wojtek Walecki, Vitali Souchkov, Georgy Mikhaylov, PhucVan, Tim Wong, Tan Nguyen, Jiansong Lu, S. H. Lau, Ann Koo


• XAFS as a Direct Local Structural Probe in Revealing the Effects of C Presence in B Diffusion in SiGe Layers C11.10
  Authors: M. Alper Sahiner, Parviz Ansari, Malcolm S. Carroll, Charles W. Magee, Steven W. Novak, Joseph C. Woicik