Program - Symposium A: Amorphous and Polycrystalline Thin-Film Silicon Science and Technology

s07_logo

Amorphous and Polycrystalline Thin-Film
Silicon Science and Technology

April 9 - 13, 2007

Chairs
 

Virginia Chu

   

INESC MN

Seiichi Miyazaki

   

Hiroshima University

Arokia Nathan

   

University College London

Jeffrey Yang

   

United Solar Ovonic LLC

Hsiao Wen Zan

   

National Chiao Tung University

Symposium Support
AKT/Applied Materials, Inc.
Asahi Glass Co., Ltd.
AU Optronics
Eastman Kodak Company
Fuji Electric Advanced Technology Co., Ltd.
National Renewable Energy Laboratory
ULVAC Technologies, Inc.
United Solar Ovonic, LLC




* Invited paper

 

TUTORIAL  


Thin-Film Silicon Materials and Devices for Large-Area and Flexible Electronics
Monday April 9, 2007
9:00 AM - 5:00 PM
Room 2000 (Moscone West)


Hydrogenated amorphous silicon (a-Si:H), nano- and/or microcrystalline silicon (nc-Si/µc-Si:H) and polycrystalline silicon (poly-Si) are the thin-film semiconductors used for large-area electronics. Important applications are in backplanes for active-matrix liquid-crystal displays (AM-LCDs), and in the fast-growing market of thin-film silicon solar cells. The materials are also used in optical scanners, radiation-imaging arrays, and various other sensor devices. Applications in organic light-emitting diode (OLED) displays are also being investigated.

The tutorial describes silicon film growth and properties, device physics, and applications. State-of-the-art, low-temperature processing will be presented. In addition to applications on rigid substrates such as glass and metal, recent work with flexible substrates of organic polymers and metal foils will be presented. Attention will be given to the connection between material properties and device performance. Existing and emerging applications will be described and discussed.

Instructors:

Friedhelm Finger
Forschungszentrum Juelich, Germany

Michio Kondo
National Institute of Advanced Industrial Science and Technology, Japan



 

SESSION A1: Film Growth I
Chair: Uwe Kortshagen
Tuesday Morning, April 10, 2007
Room 3001 (Moscone West)


8:30 AM *A1.1
Experimental and Numerical Studies on a Large Area Amorphous Silicon Film Deposition Using Capacitively Coupled Very High-frequency Plasma. Koji Satake1, Keisuke Kawamura2, Hideo Yamakoshi1 and Yoshiaki Takeuchi2; 1Advanced Technology Research Center, Mitsubishi Heavy Industries, Ltd., Yokohama, Japan; 2Nagasaki Research and Development Center, Mitsubishi Heavy Industries, Ltd., Nagasaki, Japan.

9:00 AM A1.2
Atomistic Analysis of the Role of Surface Coordination Defects in the Growth of Amorphous Silicon Thin Films Mayur Srinivasa Valipa, Tejinder Singh and Dimitrios Maroudas; Chemical Engineering, University of Massachusetts, Amherst, Amherst, Massachusetts.

9:15 AM A1.3
Laser Enhanced Deposition of Isotopically Enriched Silicon. Regis Bisson, Tung T Dang, Marco Sacchi, Rainer D Beck and Thomas R Rizzo; EPFL LCPM, Lausanne, Switzerland.

9:30 AM *A1.4
Meter-Scale Deposition of Silicon Thin Films by Slot-Excited Large Microwave Plasma. Hideo Sugai1, Y. Nojiri1, Y. Hotta1, T. Ishijima1, H. Toyoda1, A. Masuda2 and M. Kondo2; 1Department of Electrical Engineering and Computer Science, Nagoya University, Nagoya, Aichi Prefecture, Japan; 2Research Center for Photovoltaics, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki, Japan.

10:00 AM BREAK

 

SESSION A2: Defects and Metastability
Chair: Reinhard Carius
Tuesday Morning, April 10, 2007
Room 3001 (Moscone West)


10:30 AM A2.1
Mapping Electron Transport and Recombination in Silicon Thin Films by Scanning Tunneling Microscopy. Manuel J Romero1, Woong Choi2, Alp T Findikoglu2 and Mowafak M Al-Jassim1; 1National Renewable Energy Laboratory, Golden, Colorado; 2Los Alamos National Laboratory, Los Alamos, New Mexico.

10:45 AM A2.2
Detection of Coherent Spin Oscillations in the Photocurrent of Microcrystalline pin Solar Cells. Jan Behrends1, Christoph Boehme1,2, Stefan Haas3, Bernd Rech1,3 and Klaus Lips1; 1Abt. Silizium-Photovoltaik, Hahn-Meitner-Institut Berlin, Berlin, Germany; 2Department of Physics, University of Utah, Salt Lake City, Utah; 3Institute of Photovoltaics, Forschungszentrum Jülich, Jülich, Germany.

11:00 AM A2.3
ESR and Transport in Thin Film Hydrogenated Silicon over a Wide Range of Structural Compositions and Defect Densities. Oleksandr Astakhov1,2, Friedhelm Finger1, Reinhard Carius1, Yuri Petrusenko2, Valery Borysenko2 and Dmitro Barankov2; 1Institute of Photovoltaics, Forschungszentrum Jülich, Jülich, Germany; 2Institute of Solid-State Physics, Materials Sciense and Technologies, National Science Center Kharkov Institute of Physics and Technology, Kharkov, Ukraine.

11:15 AM A2.4
Defects in Tritiated Amorphous Silicon. Tong Ju1, Janica Whitaker2, Stefan Zukotynski3, Nazir P Kherani3, P.Craig Taylor4 and Paul Stradins5; 1Physics, University of Utah, Salt Lake City, Utah; 2ATK Thiokol Hazard Analysis, Brigham City, Utah; 3Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario, Canada; 4Department of Physics, Colorado School of Mines, Golden, Colorado; 5National Renewable Energy Laboratory, Golden, Colorado.

11:30 AM A2.5
Light Soaking and Thermal Annealing Effect on Micro-electrical Properties of Amorphous and Nanocrystalline Mixed-phase Silicon Solar Cells. Chunsheng Jiang1, Baojie Yan2, Helio Moutinho1, Mowafak Al-Jassim1, Jeff Yang2 and S. Guha2; 1National Renewable Energy Laboratory, Golden, Colorado; 2United Solar Ovonic LLC, Troy, Michigan.

11:45 AM A2.6
Creation Kinetics of the Different Light Induced Gap States in Diluted protocrystallinea-Si:H Thin Films and Corresponding Solar Cells. Christopher R. Wronski1, X. Niu2 and Benjamin Ross3; 1EE, Penn State University, University Park, Pennsylvania; 2GE Global Research Center, Niskayuna, New York; 3Penn State University, University Park, Pennsylvania.

 

SESSION A3: Solar Cells I
Chair: Baojie Yan
Tuesday Afternoon, April 10, 2007
Room 3001 (Moscone West)


1:30 PM *A3.1
Electrical and Optical Modelling of Thin-Film Silicon Solar Cells. Miro Zeman1 and Janez Krc2; 1Delft University of Technology, Delft, Netherlands; 2University of Ljubljana, Ljubljana, Slovenia.

2:00 PM A3.2
Enhancing Light-trapping and Efficiency of Solar Cells with Photonic Crystals. Rana Biswas1,2,3 and Dayu Zhou4,2; 1Physics & Astronomy; Electrical & Computer Engineering, Iowa State University, Ames, Iowa; 2Microelectronics Research Center, Iowa State University, Ames, Iowa; 3Ames Laboratory, Iowa State University, Ames, Iowa; 4Electrical and Computer Engineering, Iowa State University, Ames, Iowa.

2:15 PM A3.3
Optical Properties of Ag/ZnO Interfaces and Associated Losses in Back-Reflectors for Thin Film Si Photovoltaics. Deepak Sainju1, Anuja Parikh1, Nikolas Podraza1, Peter van den Oever2, Maarij Syed3, Xunming Deng1 and Robert Collins1; 1Department of Physics and Astronomy, University of Toledo, Toledo, Ohio; 2Department of Applied Physics, Eindhoven University of Technology, Eindhoven, Netherlands; 3Department of Physics and Optical Engineering, Rose-Hulman Institute of Technology, Terre Haute, Indiana.

2:30 PM A3.4
High Open-circuit Voltage in Silicon Heterojunction Solar Cells. Qi Wang1, Matt R. Page1, Eugene Iwaniczko1, Yueqin Xu1, Lorenzo Roybal1, Russell Bauer1, Dean Levi1, Yanfa Yan1, Tihu Wang2 and Howard M. Branz1; 1NREL, Golden, Colorado; 2Suntech Power, Wuxi, Jiangsu, China.

2:45 PM A3.5
Breaking the 600 mV Barrier of Thin Film Microcrystalline Silicon Solar Cells. Menno van den Donker1, Stefan Klein1, Friedhelm Finger1, Bernd Rech1, Erwin Kessels2 and Richard van de Sanden2; 1IPV, Forschungszentrum Juelich GmbH, Juelich, Nordrhein-Westfalen, Germany; 2Applied Physics, TU Eindhoven, Eindhoven, Netherlands.

3:00 PM BREAK

 

SESSION A4: Alloys
Chair: Seiichi Miyazaki
Tuesday Afternoon, April 10, 2007
Room 3001 (Moscone West)


3:30 PM *A4.1
μc-SiC:H Grown with HWCVD for Photovoltaic Applications: Structure and Electronic Properties. Reinhard Carius1, Stefan Klein2, Friedhelm Finger1, Arup Dasgupta1, Yuelong Huang1, Lothar Houben3 and Martina Luysberg3; 1Institute of Photovoltaics, Research Center Juelich, Juelich, Germany; 2Applied Materials GmbH & Co. KG, Alzenau, Germany; 3Institute of Solid State Research, Forschungszentrum Juelich, Juelich, Germany.

4:00 PM A4.2
Effects of Nitrogen Addition on the Properties of a-SiCN:H Films Using Hexamethyldisilazane. Amornrat Limmanee1, Michio Otsubo1, Tsutomu Sugiura1, Takehiko Sato2,1, Shinsuke Miyajima1, Akira Yamada3 and Makoto Konagai1; 1Physical Electronics, Tokyo Institute of Technology, Tokyo, Japan; 2Material & Processing Technology Department, Mitsubishi Electric Corporation, Kanagawa, Japan; 3Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, Tokyo, Japan.

4:15 PM A4.3
Dependence of the Electronic Properties of Hot-Wire CVD Amorphous Silicon-Germanium Alloys on Oxygen Impurity Levels Shouvik Datta1, J. David Cohen1, Yueqin Xu2, A. H. Mahan2 and Howard M. Branz2; 1Physics, University of Oregon, Eugene, Oregon; 2National Renewable Energy Laboratory, Golden, Colorado.

4:30 PM A4.4
High Quality a-Ge:H Films and Devices Through Enhanced Plasma Chemistry. Erik V Johnson and Pere Roca i Cabarrocas; LPICM, Ecole Polytechnique, Palaiseau Cedex, France.

4:45 PM A4.5
Dielectric Properties of Ultra Dense (3 g/cm3) Silicon Nitride Deposited by Hot Wire CVD at Industrially Relevant High Deposition Rates Zomer Silvester Houweling, Vasco Verlaan, Karine van der Werf, Hanno D. Goldbach and Ruud E.I. Schropp; Faculty of Science, Department of Physics and Astronomy, SID, Physics of Devices, Utrecht University, Utrecht, Utrecht, Netherlands.

 

SESSION A5: Poster Session: Alloys
Chairs: Virginia Chu and Hsiao Wen Zan
Tuesday Evening, April 10, 2007
8:00 PM
Salon Level (Marriott)


A5.1
Low Temperature Deposition of nc-3C-SiC:H films by VHF-PECVD Under High Pressure and High Power Conditions. Shinsuke Miyajima1, Makoto Sawamura1, Akira Yamada2 and Makoto Konagai1; 1Physical Electronics, Tokyo Institute of Technology, Tokyo, Japan; 2Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, Tokyo, Japan.

A5.2
Crystalline Silicon Surface Passivation by PECVD Deposited Amorphous Silicon Oxide Films. Thomas Mueller, Reinhart Job, Wolfgang Duengen, Maximilian Scherff and Wolfgang R. Fahrner; Mathematics and Computer Science, University of Hagen, Hagen, Germany.

A5.3
Amorphous Silicon Germanium n-i-p Devices Deposited by HWCVD Using a Tantalum Filament Operated at 1800°C. Harv Mahan1, Yueqin Xu1, Howard Branz1, Jeff Yang2 and Baojie Yan2; 1NREL, Golden, Colorado; 2United Solar Ovonics Corporation, Troy, Michigan.

A5.4
Effect of Boron Doping on Microcrystalline Germanium Carbon Thin Films Yasutoshi Yashiki1, Seiichi Kouketsu1, Shinsuke Miyajima1, Akira Yamada2 and Makoto Konagai1; 1Department of Physical Electronics, Tokyo Institute of Technology, Tokyo, Japan; 2Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, Tokyo, Japan.

A5.5
Characterization of Silicon Carbide Thin Films Obtained Via Sublimation of a Solid Polymer Source Using Polymer-Source CVD Process El Hassane Oulachgar1, Cetin Aktik1, Starr Dostie2, Subhash Gujrathi3 and Mihai Scarlete2; 1Nanofabrication and Nanocharacterization Research Center (CRN2), Electrical & Computer Engineering Department, Sherbrooke University, Sherbrooke, Quebec, Canada; 2Chemistry Department, Bishop's University, Lennoxville, Quebec, Canada; 3Thin Film Physics and Technology Research Center (GCM), Physics Department, Montreal University, Montreal, Quebec, Canada.

A5.6
SiCOI Structure Fabricated by Hot-mesh Chemical Vapor Deposition Kanji Yasui, Hitoshi Miura, Yuichirou Kuroki, Masasuke Takata and Tadashi Akahane; Electrical, Electronic and Information, Nagaoka University of Technology, Nagaoka, Japan.

A5.7
A Study of a-SiC:H Films Deposited by Remote PECVD System using HMDS Precursor with C2H2 Dilution Gas. Sung Hyuk Cho1, Doo Jin Choi1 and Tae Song Kim2; 1Department of Ceramic Engineering, Yonsei University, Seoul, Seoul, South Korea; 2Korea Institute of Science and Technology, Seoul, Seoul, South Korea.

A5.8
Low Temperature High Quality Growth of Silicon-Dioxide Using Oxygenation of Hydrogenation-Assisted Nano-Structured Silicon Thin Films Nima Rouhi1, Behzad Esfandyarpour1, Shams Mohajerzadeh1, Bahman Hekmatshoar2 and Michael Robertson3; 1School of ECE, University of Tehran, Thin Film Lab., Nanoelectronics center of excellence, Tehran, Iran; 2Electrical engineering, Princeton University, Boston, Massachusetts; 3Physics, Acadia University, Wolfville, Nova Scotia, Canada.

A5.9
Influence of Prepartion Conditions on the Stressing Behavior of Plasma Deposited Silicon Dioxide Films. Vikram L Dalal and Vishwas Jaju; Elec. and Computer Engr., Iowa State University, Ames, Iowa.

 

SESSION A6: Poster Session: Crystallization Techniques and Epitaxy
Chairs: Virginia Chu and Hsiao Wen Zan
Tuesday Evening, April 10, 2007
8:00 PM
Salon Level (Marriott)


A6.1
A Novel Bonding Technique Using Metal-Induced Crystallization of Amorphous Silicon. Markus Daniel Ong and Reinhold H. Dauskardt; Materials Science and Engineering, Stanford University, Stanford, California.

A6.2
The Electrical Properties of Unidirectional Metal-Induced Lateral Crystallization Poly-Si TFTs. Nam-Kyu Song, Young-Su Kim, Min-Sun Kim, Shin-Hee Han and Seung-Ki Joo; School of Materials Science and Engineering, Seoul National University, Seoul, South Korea.

A6.3
Effects of Deposition and Layer Parameters on Aluminum- Induced Crystallization of PECVD Amorphous Silicon. Kendrick S Hsu1, Jermey Ou-Yang1, Grant Z. Pan1 and Liping Ren2; 1Electrical Engineering, University of California at Los Angeles, Los Angeles, California; 2Nanoelectronics and Nanophotonics Laboratory, Global Nanosystems, Inc., Los Angeles, California.

A6.4
Aluminum Induced Crystallization of Amorphous Silicon on Different Substrates Blow and Above Eutectic Temperature. Meijun Lu1,2, Ujjwal Das1, Steven Hegedus1, Brian McCandless1 and Robert Birkmire1,2; 1Institute of Energy Conversion, University of Delaware, Newark, Delaware; 2Department of Physics and Astronomy, University of Delaware, Newark, Delaware.

A6.5
Small-Grained Si Films Obtained via Single-Laser-Pulse-Induced Nucleation-Initiated Solidification of Amorphous Si Films: a New Crystallization Method. Yikang Deng, Sharona Hazair, Alexander B. Limanov, Ui-Jin Chung, Paul C. Van der Wilt, Adrian M. Chitu and James S. Im; Applied Physics and Applied Mathematics, Columbia University, New York, New York.

A6.6
Analysis of Intra-Subgrain Defects Observed in Directionally-Solidified Si Films Obtained via Line-Scan SLS Ui-Jin Chung, Paul C. van der Wilt, Adrian M. Chitu, Alex B. Limanov and James S. Im; Applied Physics & Applied Mathematics, Columbia University, New York, New York.

A6.7
Microstructure and Orientation Analysis of Low-Defect-Density Crystal Domains Created via Dot-SLS of Amorphous Si Films. P. C. Van der Wilt1, B. A. Turk2, A. M. Chitu1, U. J. Chung1, A. B. Limanov1 and James S. Im1; 1Program in Materials Science and Engineering, Department of Applied Physics and Applied Mathematics, Columbia University, New York, New York; 2Coherent, Inc., Santa Clara, California.

A6.8
A Simple Explanation on The Phase Transformation Kinetics of CW Laser Crystallization of Amorphous Silicon Thin Film on Glass. Seong Jin Park, Yu Mi Ku, Ki Hyung Kim, Jae Hwan Oh and Jin Jang; Advanced Display Research Center, Kyung Hee University, Seoul, South Korea.

A6.9
Structural and Electronic Characterization of P-Doped Laser Crystallized Polycrystalline Silicon Films Rosari Saleh1, Norbert H Nickel2 and Karsten v Maydell2; 1Department of Physics, Universitas Indonesia, Depok, Indonesia; 2Hahn-Meitner Institute, Berlin, Indonesia.

A6.10
High Aspect Ratio Nanostructures by Excimer Laser Crystallisation of Thin PECVD Silicon Films. Saydulla Persheyev, Mohammed Zubair Shaikh, Kevin ONeill, Yongchang Fan, Charlie Main and Mervyn Rose; Electronics Engineering and Physics, University of Dundee, Dundee, United Kingdom.

A6.11
Co-deposition of Silicon Nanoparticles into Amorphous Silicon Films for Seed-nucleated Recrystallization C. Anderson1, C. Blackwell2, J. Kakalios2 and U. Kortshagen1; 1Department of Mechanical Engineering, University of Minnesota, Minneapolis, Minnesota; 2School of Physics and Astronomy, University of Minnesota, Minneapolis, Minnesota.

A6.12
Epitaxy at 100 nm/min by Hot-Wire Chemical Vapor Deposition onto Silicon Wafers at 500 to 700°C. Charles W Teplin, Qi Wang, Howard M. Branz, Kim M. Jones and Paul Stradins; NREL, Golden, Colorado.

A6.13
ESR Study of Crystallization of Hydrogenated Amorphous Silicon Thin Films. Tining Su1, P. Craig Taylor1, Pauls Stradins2, Yueqin Xu2, Falah Hasoon2 and Qi Wang2; 1Colorado School of Mines, Golden, Colorado; 2National Renewable Energy Laboratory, Golden, Colorado.

A6.14
Growth of Epitaxial Si Layers on a Poly-Si Seed Film by Hot Wire CVD for Low Temperature Poly-Si TFTs. Seung Ryul Lee, Kyung Min Ahn, Kye Ung Lee and Byung Tae Ahn; Materials Science & Engineering, Korea Advanced Institute of Science & Technology, Daejeon, South Korea.

A6.15
Novel Crystallization Method on the Highly Ordered Porous Anodic Alumina for High Uniformity Top Gate Polycrystalline Si Thin Film Transistors. Jong-Yeon Kim, Jin-Woo Han, Young-Hwan Kim, Byung-Yong Kim, Dong-Hun Kang and Dae-Shik Seo; electrical and electronic engineering, Yonsei university, Seoul, South Korea.

A6.16
Epitaxial Thickening of Large-Grain Poly-Crystalline Silicon Seed Layers on Glass by Hot-Wire Chemical Vapor Deposition Charles W Teplin1, Kim M. Jones1, Manuel J. Romero1, Paul Stradins1, Howard M. Branz1 and Stefan Gall2; 1NREL, Golden, Colorado; 2Hah-Meitner-Institue, Berlin, Germany.

A6.17
Grain Size Control by Means of Solid Phase Crystallization of Amorphous Silicon. Jordi Farjas1, Pere Roura1 and Pere Roca i Cabarrocas2; 1Physics, University of Girona, Girona, Girona, Spain; 2LPICM (UMR 7647 CNRS), Ecole Polytechnique, Palaiseau, France.

A6.18
Solid Phase Epitaxial Regrowth of Amorphous Silicon Layers through Microwave Heating. D. C. Thompson1, J. Decker1, T. L. Alford1, J. W. Mayer1 and N. David Theodore2; 1School of Materials, Arizona State University, Tempe, Arizona; 2Wireless & Packaging Systems Lab., Freescale Semiconductor Inc., Tempe, Arizona.

A6.19
Electrical Characterization of Low Temperature Epitaxial Silicon Thin Films. Mahdi Farrokh Baroughi, Hassan G. El-Gohary and Siva Sivoththaman; ECE, University of Waterloo, Waterloo, Ontario, Canada.

 

SESSION A7: Poster Session: Micro- and Nanocrystalline Silicon
Chairs: Virginia Chu and Hsiao Wen Zan
Tuesday Evening, April 10, 2007
8:00 PM
Salon Level (Marriott)


A7.1
Relation between Electronic Properties and Density of Crystalline Agglomerates in Microcrystalline Silicon. Paula Catharina Petronella Bronsveld1, Tomas Mates2, Antonin Fejfar2, Jatin K. Rath1 and Ruud E.I. Schropp1; 1Faculty of Science, Utrecht University, Utrecht, Netherlands; 2Institute of Physics, Academy of Sciences of the Czech Republic, Prague, Czech Republic.

A7.2
Optimisation of Microcrystaline Silicon Deposited by Expanding Thermal Plasma Chemical Vapor Deposition for Solar-Cell Application. Raul Jimenez Zambrano1, Rene A. C. M. M. van Swaaij1 and Richard M. C. M van de Sanden2; 1DIMES-ECTM, Delft University of Technology, Delft, Netherlands; 2Department of Applied Physics, Eindhoven University of Technology, Eindhoven, Netherlands.

A7.3
Optimization Strategy for the Integration of Microcrystalline Silicon Films Deposited at Very High Deposition Rates in to pin Solar Cells using the MHC-VHF Technique. Arno Hendrikus Marie Smets, Takuya Matsui and Michio Kondo; Research Center for Photovoltaics, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki, Japan.

A7.4
Abstract Withdrawn
A7.5
Synthesis and Characterization of Nanocrystalline Diamond Thin Films by Electron Cyclotron Resonance Chemical Vapor Deposition. Jae Seok Lee, Tae Kon Kim, Arul Chakkaravarthi Arjunan and Rajiv Kumar Singh; Materials Science of Engineering, University of Florida, Gainesville, Florida.

A7.6
A Kinetic Model of Stress Evolution During Coalescence and Growth of Polycrystalline Thin-films. Juan S Tello, Brown University, Providence, Rhode Island.

A7.7
Boron Doping Effects in Microcrystalline Silicon Wolfhard Beyer, Lars Niessen and Frank Pennartz; Institute of Photovoltaics, IEF, Forschungszentrum Jülich GmbH, Jülich, Germany.

A7.8
Abstract Withdrawn
A7.9
Study of Optical Emission Spectroscopy During Preparing Nano-crystalline Silicon Intrinsic Layers with VHF-PECVD Feng Zhu1, Prabhat Kumar1, Josh Gallon2, Jian Hu2 and Arun Madan1,2; 1Metallurgical and Materials Engineering, colorado school of mines, Golden, Colorado; 2mvsysteminc, Golden, Colorado.

A7.10
The Role of Hydrogen in Photoluminescence of Si/SiO2 Multilayers. Zhengyue Xia, Peigao Han, Deyuan Chen, Jiaxin Mei, Jun Xu, Wei Li, Zhongyuan Ma, Ling Xu, Xinfan Huang and Kunji Chen; Physics, Nanjing University, Nanjing, Jiangsu, China.

 

SESSION A8: Poster Session: Thin Film Growth
Chairs: Virginia Chu and Hsiao Wen Zan
Tuesday Evening, April 10, 2007
8:00 PM
Salon Level (Marriott)


A8.1
Phase Control and Stability of Thin Silicon Films Deposited from Silane Diluted with Hydrogen. Gijs van Elzakker1, P. Šutta2, F. D. Tichelaar3 and M. Zeman1; 1ECTM/DIMES, Delft University of Technology, Delft, Netherlands; 2New Technologies - Research Centre, University of West Bohemia, Plzen, Czech Republic; 3National Centre for HREM, Delft University of Technology, Delft, Netherlands.

A8.2
Abstract Withdrawn
A8.3
First-Principles Theoretical Analysis of Surface Hydride Dissociation on Plasma-Deposited Amorphous Silicon Thin Films. Tejinder Singh, Mayur Srinivasa Valipa and Dimitrios Maroudas; Chemical Engineering, University of Massachusetts, Amherst, Amherst, Massachusetts.

A8.4
The Effect of Near Mono-energetic Ion Bombardment on Remote Plasma Deposited a-Si:H Ina Martin, Michiel A. Blauw, W. M. M. Kessels, Richard A. H. Engeln and M. C. M. van de Sanden; Applied Physics, Technical University of Eindhoven, Eindhoven, Netherlands.

A8.5
Reliability of Silicon Nitride Gate Dielectric in Vertical Thin-Film Transistors. Maryam Moradi1, Denis Striakhilev1, Isaac Chan1, Saeed Fathololoumi1 and Arokia Nathan2; 1ECE, university of waterloo, Waterloo, Ontario, Canada; 2London Centre for Nanotechnology, University College London, London, United Kingdom.

A8.6
Cyclohexasilane (Si6H12) for Silicon-Based Materials Xuliang Dai, Douglas L. Schulz and Philip R. Boudjouk; North Dakoda State University, Fargo, North Dakota.

A8.7
Effects of Ion Bombardment on the Properties of Hydrogenated Amorphous Germanium Kristin Pollock, Tobin Kaufman-Osborn, Jonas Hiltrop, Kyle Braam, Steven Fazzio and James Doyle; Department of Physics, Macalester College, St. Paul, Minnesota.

A8.8
Deposition Uniformity Control in a Commercial Scale HTO-CVD Reactor
Shigeru Sakai1, Masaaki Ogino1, Ryosuke Shimizu2 and Yukihiro Shimogaki3; 1Fuji Electric Advanced Technology Co.Ltd., 4-18-1,Tsukama, Matsumoto, Japan; 2Fuji Electric Advanced Technology Co,Ltd,, 1,Fuji-machi,, Hino, Japan; 3The University of Tokyo, 7-3-1,Hongo, Tokyo, Japan.

SESSION A9: Electronics on Flexible Substrates
Chair: Min-Koo Han
Wednesday Morning, April 11, 2007
Room 3001 (Moscone West)


8:30 AM *A9.1
Fabrication of Flexible Thin Film Transistors Using Self-Aligned Imprint Lithography and Roll-to-Roll Processes. Craig Perlov1, Marcia Almanza-Workman1, Steve Braymen2, Alison Chaiken1, Frank Jeffrey2, Robert Garcia1, Jason Hauschildt2, Warren Jackson1, Albert Jeans1, Han-Jun Kim1, Hao Luo1, Ohseung Kwon1, Ping Mei1 and Carl Taussig1; 1Hewlett Packard Laboratories, Palo Alto, California; 2Powerfilm, Inc, Boone, Iowa.

9:00 AM A9.2
Channel Length Scaling of High Performance Transistors on Flexible Substrates Fabricated Using Imprint Lithography Warren Jackson1, D. Veksler2, A. Koudymov2, M. Shur2, M. Almanza-Workman1, S. Braymen3, A. Chaiken1, R. Garcia1, J. Hauschildt3, A. Jeans1, F. Jeffrey3, H. -J. Kim1, O. Kwon1, H. Luo1, P. Mei1, C. Perlov1 and C. Taussig1; 1HP Labs, Palo Alto, California; 2Rensselaer Polytechnic Institute, Troy, New York; 3Power Film, Inc, Boone, Iowa.

9:15 AM A9.3
Flexible a-Si:H-based Image Sensors Fabricated by Digital Lithography. William S. Wong, TseNga Ng, Michael L. Chabinyc, Rene A. Lujan, Raj B. Apte, Scott Limb and Robert A. Street; Electronic Materials and Devices Laboratory, Palo Alto Research Center, Palo Alto, California.

9:30 AM A9.4
Instability of Amorphous Thin Film Transistors under Prolonged High Compressive Strain. Jian Z Chen1, I-Chun Cheng1, Sigurd Wagner1, Craig M Perlov2, Warren B Jackson2 and Carl P Taussig2; 1Electrical Engineering, Princeton University, Princeton, New Jersey; 2Hewlett Packard Laboratories, Palo Alto, California.

9:45 AM A9.5
Single Grain Si TFTs Fabricated at 100°C for Microelectronics on a Plastic Substrate. Ming He, Ryoichi Ishihara, Tao Chen, Wim J.W Metselaar and Kees C.I.M. Beenakker; Dimes_Tudelft, Delft, Netherlands.

10:00 AM BREAK

 

SESSION A10: Novel Applications
Chair: Apostolos Voutsas
Wednesday Morning, April 11, 2007
Room 3001 (Moscone West)


10:30 AM *A10.1
Deformable Thin-film Electronics for Biomedical Prosthetics and Diagnostic Tools. Stephanie P Lacour1, Barclay Morrison2, Sigurd Wagner3, Mark Blamire1 and James Fawcett4; 1Materials Science, University of Cambridge, Cambridge, United Kingdom; 2Biomedical Engineering, Columbia University, New York, New York; 3Electrical Engineering, Princeton University, Princeton, New Jersey; 4Centre for Brain Repair, University of Cambridge, Cambridge, United Kingdom.

11:00 AM A10.2
Performance of Thin Film Silicon MEMS on Flexible Plastic Substrates. Samadhan Bhaulal Patil1, Virginia Chu1 and João Pedro Conde1,2; 1INESC Microsistemas e Nanotecnologias, Lisbon, Portugal; 2Dept. of Chemical and Biological Engineering, Instituto Superior Tecnico, Lisbon, Portugal.

11:15 AM A10.3
Amorphous Silicon Based TFT and MIS Nonvolatile Memories. Yue Kuo and Helinda Nominanda; Thin Film Nano & Microelectronics Research Lab, Texas A&M University, College Station, Texas.

11:30 AM A10.4
Monolithic Integrated a-Si:H Based Pin-diodes with Orthogonally Liquid Light Guidance Structures for Lab-on-microchip Applications. Heiko Schaefer, Konstantin Seibel, Lars Schöler, Marcus Walder and Markus Böhm; FB 12 IMT/HE, Institute for Microsystem Technologies, Siegen, Germany.

11:45 AM A10.5
μ-Watt Enhanced Electroluminescent Power of Silicon Nanocrystal Light-Emitting Diodes Made on Nano-Scale Silicon-Tip-Array Substrate. Chun-Jung Lin2 and Gong-Ru Lin1; 1Graduate Institute of Electro-Optical Engineering and Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan; 2Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University, HsinChu, Taiwan.

 

SESSION A11: Thin Film Transistors I
Chair: Arokia Nathan
Wednesday Afternoon, April 11, 2007
Room 3001 (Moscone West)


1:30 PM *A11.1
High Mobility Nanocrystalline Silicon TFTs for Display Application Min-Koo Han and Sang-Myeon Han; Seoul National University, Seoul, South Korea.

2:00 PM A11.2
Self-Aligned Nanocrystalline Silicon Thin-Film Transistor with Directly Deposited n+ Layer. I-Chun Cheng and Sigurd Wagner; Electrical Engineering, Princeton University, Princeton, New Jersey.

2:15 PM A11.3
Contact Effects in High Mobility Microcrystalline Silicon Thin-Film Transistors Kah Yoong Chan1,2, Eerke Bunte2, Helmut Stiebig2 and Dietmar Knipp1; 1School of Engineering and Science, International University Bremen, Bremen, Bremen, Germany; 2Institute of Photovoltaic, Research Center Jülich, Jülich, Germany.

2:30 PM A11.4
Analysis and Modeling of Photo Leakage Current in Poly-Si TFTs under RGB Backlight. Hsiao Wen Zan, Shih-Chin Kao, Chuan-Shen Wei and Ming Chun Su; Department of Photonics, Display Institute, HsinChu, Taiwan.

2:45 PM A11.5
Oxygen as an accidental dopant in high mobility microcrystalline Si Thin Film Transistors John Robertson1 and Arokia Nathan2,1; 1Engineering, Cambridge University, Cambridge, United Kingdom; 2London Centre for Nanotechnology, University College London, London, United Kingdom.

3:00 PM BREAK

 

SESSION A12: Imagers and Sensors
Chair: Hsiao Wen Zan
Wednesday Afternoon, April 11, 2007
Room 3001 (Moscone West)


3:30 PM A12.1
PECVD Grown p-i-n Si and Si,Ge Thin Film Photodetectors for Integrated Oxygen Sensors. Debju Ghosh1, Ruth Shinar2, Vikram L. Dalal1,2, Zhaoqun Zhou3 and Joseph Shinar1,3; 1Electrical and Computer Engineering, Iowa State University, Ames, Iowa; 2Microelectyronics Research Center, Iowa State University, Ames, Iowa; 3Physics and Astronomy, Iowa State University, Ames, Iowa.

3:45 PM A12.2
Segmented Amorphous Silicon n-i-p Photodiodes on Stainless-Steel Foils for Flexible Imaging Arrays. Yuriy Vygranenko1, D. Striakhilev1, R. Kerr3, J. H. Chang1, K. H. Kim1, A. Nathan2, G. Heiler3 and T. Tredwell3; 1Dept. of Electrical and Computer Engineering, University of Waterloo, Waterloo, Ontario, Canada; 2London Centre for Nanotechnology, University College, London, United Kingdom; 3Eastman Kodak Company, Rochester, New York.

4:00 PM A12.3
Transient Current Behavior of Vertically Integrated Amorphous Silicon Diodes. Gregory Choong1, Nicolas Wyrsch1, Christophe Ballif1, Rolf Kaufmann2 and Felix Lustenberger2; 1Institut de Microtechnique, University of Neuchatel, Neuchatel, Switzerland; 2CSEM SA, Zurich, Switzerland.

4:15 PM A12.4
Optical Readout in Pinpi’n and Pini’p Imagers: A Comparison. Paula Louro1, Alessandro Fantoni1, Miguel Fernandes1, Manuela Carvalho Vieira1, Joao Martins1, Guilherme Lavareda2,3 and Carlos Nunes Carvalho2,3; 1DEETC, ISEL, Lisbon, Portugal; 2DCM, FCT-UNL, Lisbon, Portugal; 3C1, IST, Lisbon, Portugal.

4:30 PM A12.5
Germanium-silicon Separate Absorption and Multiplication Avalanche Photodetectors Fabricated with low Temperature High Density Plasma Chemical Vapor Deposited Germanium. Malcolm Carroll, Kent Childs and Darwin Serkland; Sandia National Laboratories, Albuquerque, New Mexico.

4:45 PM A12.6
Modeling and Characterization of the Hydrogenated Amorphous Silicon Metal Insulator Semiconductor Photosensors for Digital Radiography. Nader Safavian1, Arokia Nathan2, Gregory Heiler3 and Timothy Tredwell3; 1ECE, university of waterloo, Waterloo, Ontario, Canada; 2ECE, London Centre for Nanotechnology, London, United Kingdom; 3Eastman Kodak Company, Rochester, New York.

 

SESSION A13: Crystallization Techniques I
Chair: Jin Jang
Thursday Morning, April 12, 2007
Room 3001 (Moscone West)


8:30 AM *A13.1Disk-shaped Grain Growth of Amorphous Silicon. Jin Jang, Department of Information Display, Kyung Hee University, Seoul, South Korea.

9:00 AM A13.2
Attainment of Intragrain-Defect-Free and {100}-Surface-Oriented Single-Crystal Si Islands for Ultra-High-Performance TFTs. P. C. Van der Wilt1, B. A. Turk2, A. M. Chitu1, U. J. Chung1, A. B. Limanov1 and James S. Im1; 1Program in Materials Science and Engineering, Department of Applied Physics and Applied Mathematics, Columbia University, New York, New York; 2Coherent, Inc., Santa Clara, California.

9:15 AM A13.3
An Approach to Obtain Single Layer of Nanostructured Si by Laser Irradiation on Ultrathin Amorphous Si Films. Jun Xu, Zhanhong Cen, Wei Li, Xinfan Huang and Kunji Chen; Department of Physics and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing210093, China.

9:30 AM A13.4
Rapid Crystallization of Amorphous Silicon Utilizing the Plasma Annealing at Atmospheric Pressure. Hajime Shirai1, Yusuke Sakurai1, Mina Yeo1 and Tomohiro Kobayashi2; 1The Graduate School of Science and Engineering, Saitama University, Saitama, Japan; 2The Institute of Physics and Chemical Research, 2-1 Hiriosawa, Wako, Japan.

9:45 AM A13.5
High Efficiency Activation of Phosphorus Atoms Induced by Thermal Plasma Jet Crystallization of Doped Amorphous Si Films. Hirotaka Kaku, Seiichiro Higashi, Tatsuya Okada, Takuya Yorimoto, Hideki Murakami and Seiichi Miyazaki; Grad. School of Advanced Sciences of Matter, Hiroshima Univ., Higashi-Hiroshima, Japan.

10:00 AM BREAK

 

SESSION A14: Thin Film Transistors II
Chair: Stephanie Lacour
Thursday Morning, April 12, 2007
Room 3001 (Moscone West)


10:30 AM *A14.1
Thin Film Structure Manipulation and Material Engineering for High Performance Poly-Si TFTs. Tolis Voutsas, LCD Process Technology Lab, Sharp Labs of America, Camas, Washington.

11:00 AM A14.2
Nanocrystalline Si Film Fabricated by Inductively Coupled Plasma Chemical Vapor Deposition at Room-temperature for Thin Film Transistor. Jung Ji-Sim, Park Kyung Bae, Lee Sang Yoon and Kwon Jang Yeon; Display Device & Material Lab, Samsung Advanced Institute of Technology, Suwon, South Korea.

11:15 AM A14.3
Drain bias dependent pulsed stress in a-Si:H TFT for AMOLED display Jae-Hoon Lee, Sang-Geun Park, Sang-Myeon Han, Sun-Jae Kim and Min-Koo Han; Electrical Engineering and Computer science, Seoul National University, Seoul, South Korea.

11:30 AM A14.4
Effect of SiNx Gate Dielectric Deposition Power on the Electrical Stability of a-Si:H TFTs. Alex Z Kattamis, I-Chun Cheng, Ke Long and Wagner Sigurd; Electrical Engineering and Princeton Institute for the Science and Technology of Materials, Princeton University, Princeton, New Jersey.

11:45 AM A14.5
Noise Performance of High Fill Factor Pixel Architectures for Robust Large-Area Image Sensors using Amorphous Silicon Technology. Jackson Lai1, Yuri Vygranenko1, Gregory Heiler2, Nader Safavian1, Denis Striakhilev1, Arokia Nathan3 and Timothy Tredwell2; 1Department of Electrical and Computer Engineering, University of Waterloo, Waterloo, Ontario, Canada; 2Eastman Kodak Company, Rochester, New York; 3London Centre for Nanotechnology, University College London, London, United Kingdom.

 

SESSION A15: Solar Cells II
Chair: Johannes Meier
Thursday Afternoon, April 12, 2007
Room 3001 (Moscone West)


1:30 PM *A15.1
Status of nc-Si:H Solar Cells at United Solar and Roadmap for Manufacturing a-Si:H and nc-Si:H Based Solar Panels. Baojie Yan, Guozhen Yue and Subhendu Guha; United Solar Ovonic LLC, Troy, Michigan.

2:00 PM A15.2
Advanced Deposition Phase Diagrams for Guiding Si:H-Based Multijunction Solar Cells. Jason Stoke, Nikolas Podraza, Xinmin Cao, Xunming Deng and Robert Collins; Department of Physics and Astronomy, University of Toledo, Toledo, Ohio.

2:15 PM A15.3
Triple Junction n-i-p Solar Cells with Hot-Wire Deposited Protocrystalline and Microcrystalline Silicon Ruud E.I. Schropp, Hongbo Li, Ronald H.J. Franken, Jatindra K. Rath, Karine C.H.M. van der Werf, Jan Willem A. Schüttauf and Robert L. Stolk; Faculty of Science, SID - Physics of Devices, Utrecht University, Utrecht, Netherlands.

2:30 PM A15.4
High Rate Deposition of Amorphous Silicon Based Solar Cells Using Modified Very High Frequency Glow Discharge. Guozhen Yue, Baojie Yan, Laura Sivec, Jeffrey Yang and Subhendu Guha; United Solar Ovonic LLC, Troy, Michigan.

2:45 PM A15.5
Fabrication and Optimization of a-Si:H n-i-p Single-junction Solar Cells with 8 Å/s Intrinsic Layers of Protocrystalline Si:H Materials. Xinmin Cao, Wenhui Du, Yasuaki Ishikawa, Xianbo Liao, Robert W. Collins and Xunming Deng; Department of Physics and Astronomy, University of Toledo, Toledo, Ohio.

3:00 PM BREAK

 

SESSION A16: Crystallization Techniques II
Chair: Toshiyuki Sameshima
Thursday Afternoon, April 12, 2007
Room 3001 (Moscone West)


3:30 PM *A16.1
Laser Crystallization of Silicon for Large Area Electronics Toshiyuki Sameshima, Tokyo University of Agriculture & Technology, Koganei, Tokyo, Japan.

4:00 PM A16.2
Electrical Characteristics of Ni-metal induced lateral crystallization TFTs formed by Cu Induced Unidirectional Crystallization Young-Su Kim, Nam-Kyu Song, Bong-Kwan Shin, Min-Sun Kim, Sang-Ju Lee and Seung-Ki Joo; Material Science and Engineering, Seoul National University, Seoul, South Korea.

4:15 PM A16.3
Intra-grain Defect Characterization of Polycrystalline Silicon Layers Obtained by Aluminium induced Crystallization and Epitaxy. Dries Van Gestel, Ivan Gordon, Lode Carnel, Guy Beaucarne and Jef Poortmans; IMEC, Leuven, Belgium.

4:30 PM A16.4
Comparative Study of Solid-Phase Crystallization of Amorphous Silicon Deposited by Hot-wire CVD, Plasma-Enhanced CVD, and Electron Beam Evaporation Paul Stradins1, Oliver Kunz2, David L. Young1, Yanfa Yan1, Yueqin Xu1, Robert Reedy1, Howard M. Branz1, Armin G. Aberle2 and Qi Wang1; 1National Renewable Energy Laboratory, Golden, Colorado; 2The University of New South Wales, Sydney, New South Wales, Australia.

4:45 PM A16.5
Crystallization of Amorphous Si Nanowires Through Self-heating Ali Gokirmak1, Nathan Henry2 and Helena Silva1; 1Electrical and Computer Engineering, University of Connecticut, Storrs, Connecticut; 2Electrical Engineering, Michigan Technological University, Houghton, Michigan.

 

SESSION A17: Poster Session: Thin Film Transistors
Chairs: Arokia Nathan and Jeffrey Yang
Thursday Evening, April 12, 2007
8:00 PM
Salon Level (Marriott)


A17.1
Dependence of Stability of a-Si TFT's Fabricated on Clear Plastic at 285°C on Gate Stress Voltage. Bahman Hekmatshoar, Kunigunde Cherenack, Alexis Kattamis, Sigurd Wagner and James Sturm; Princeton Institute for the Science and Technology of Materials (PRISM), Department of Electrical Engineering, Princeton University, Princeton, New Jersey.

A17.2
Microcrystalline Silicon Thin Film Transistors with High Deposition Rate Using Plasma Enhanced Chemical Vapor Deposition. Kyung Bae Park, Ji Sim Jung, Jong Man Kim, Sang Yoon Lee and Jang Yeon Kwon; Display Lab, Samsung Advanced Institute of technology, Yongin-Si, Kyeong Gi-Do, South Korea.

A17.3
Back Channel Passivated Amorphous Silicon TFTs Fabricated at 3000C on a Clear Plastic Substrate. Kunigunde Cherenack, I-Chun Cheng, Alex Kattamis, Bahman Hekmatshoa, James Sturm and Sigurd Wagner; Dept. of Electrical Engineering and Princeton Institute for the Science and Technology of Materials (PRISM), Princeton University, Princeton, New Jersey.

A17.4
Abstract Withdrawn
A17.5
Effect of Channel Length and Drain Bias on Threshold Voltage of Field Enhanced Solid Phase Crystallization Polycrystalline Thin Film Transistor on the Glass Substrate Won-Kyu Lee1,2, Sang-Myeon Han1, Sang-Geun Park1, Young-Jin Chang2, Kee-Chan Park2, Chi-Woo Kim2 and Min-Koo Han1; 1School of Electricl Engineering, Seoul National University, Seoul, South Korea; 2LCD Business, Samsung Electronics Co. Ltd., Youngin-City, Kyunggi-Do, South Korea.

A17.6
Abstract Withdrawn
A17.7
Abstract Withdrawn
A17.8
Abstract Withdrawn
A17.9
Poly-si thin film transistor Fabricated by Nanoimprint Method. Byung-Yong Kim, Jin-Woo Han, Young-Hwan Kim, Jong-Yeon Kim, Dong-Hun Kang and Dea-Shik Seo; electrical and electronic engineering, Yonsei university, Seoul, South Korea.

 

SESSION A18: Poster Session: Solar Cells
Chairs: Arokia Nathan and Jeffrey Yang
Thursday Evening, April 12, 2007
8:00 PM
Salon Level (Marriott)


A18.1
Transferred to A15.5
A18.2
Novel Nanocrystalline Solar Cell Vikram L Dalal, Elec. and Computer Engr., Iowa State University, Ames, Iowa.

A18.3
Development of Thin Film Microcrystalline Silicon Solar Cells with Hot-Wire CVD Intrinsic Layer Hongbo Li, Ronald H.J. Franken, Robert L. Stolk, C. H.M. van der Werf, Jatin K. Rath and Ruud E.I. Schropp; Surfaces, Interfaces and Devices, Faculty of Science, Utrecht University, Utrecht, Netherlands.

A18.4
Resistive Losses at c-Si/a-Si:H/ZnO Contacts for Heterojunction Solar Cells. Florian Einsele, Phillip J. Rostan and Uwe Rau; Inst. Phys. Electron., University Stuttgart, Stuttgart, Germany.

A18.5
Abstract Withdrawn
A18.6
Hydrofluoric Acid Treatment of Amorphous Silicon Films for Photovoltaic Processing. Michael Burrows1,2, Ujjwal Das1, Meijun Lu1, Stuart Bowden1, Robert Opila2 and Robert Birkmire1,2; 1Institute of Energy Conversion, University of Delaware, Newark, Delaware; 2Materials Science and Engineering, University of Delaware, Newark, Delaware.

A18.7
SnO2/ZnO bi-layer Textured Transparent Conductive Oxide: A Substrate for nc-Si:H Solar Cells. Feng Zhu1,2, Ying Zhao2, Changchun Wei2 and Xinhua Geng2; 1colorado school of mines, Golden, Colorado; 2Institute of Photo-electronic thin film devices and technology, Nankai University,, tianjin, tianjin, China.

A18.8
High-performance, Tandem-type Amorphous Silicon Solar Cell. Porponth Sichanugrist, Nirut Pingate and Channarong Piromjit; ISET, NSTDA, Pathumthani, Thailand.

A18.9
Modeling of Amorphous/Crystalline Silicon Heterojunction Solar Cells on the Base of Spectral Characteristics Andrzej Kolodziej and Pawel Krewniak; Department of Electronics, AGH University of Science and Technology, Kraków, Poland.

A18.10
A Comparison of Heat Transfer Characteristic of Mediums in a-Si Photovoltaic/Thermal Solar Collectors. Thipjak Nualboonrueng and Porponth Sichanugrist; ISET, National Science and Technology Development Agency, Pathumthani, Thailand.

A18.11
Hydrogen Passivation of Thin-film Polysilicon Solar Cells. Lode Carnel, Ivan Gordon, Dries Van Gestel, Guy Beaucarne and Jef Poortmans; imec, Leuven, Belgium.

A18.12
Photocurrent Profile in a-SiC:H Monolithic Tandem Pinpin and Pinip Photodiodes. Alessandro Fantoni1, Joao Martins1, Miguel Fernandes1, Paula Louro1, Yuri Vygranenko1,2 and Manuela Carvalho Vieira1; 1Electronics Telecommunication and Computer, ISEL, Lisbon, Portugal; 2Electrical and Computer Engineering, University of Waterloo, Waterloo, Ontario, Canada.

 

SESSION A19: Poster Session: Imagers, Sensors and Novel Applications
Chairs: Arokia Nathan and Jeffrey Yang
Thursday Evening, April 12, 2007
8:00 PM
Salon Level (Marriott)


A19.1
Study of a Fabrication Process and Characterization of One Dimensional Array of Un-cooled Micro-bolometers Based on Germanium films deposited by Plasma Mario Moreno, Andrey Kosarev and Alfonso Torres; Electronics, INAOE, Puebla, Puebla, Mexico.

A19.2
Preliminary Results on Large Area X-ray a-SiC:H Multilayer Detectors with Optically Addressed Readout. Manuela Carvalho Vieira1, Yury Vygranenko1,2, Miguel Fernandes1, Pedro Sanguino1, Alessandro Fantoni1, Paula Louro1 and Reinhard Schwarz3,1; 1Electronics Telecommunication and Computer, ISEL, Lisbon, Portugal; 2Electrical and Computer Engineering, University of Waterloo, Waterloo, Ontario, Canada; 3Physics, IST, Lisbon, Portugal.

A19.3
Non linear Photocurrent Dependence on the Light Flux: A Requirement in the Laser Scanned Photodiode Technique. Miguel Fernandes1, Manuela Vieira1 and Rodrigo Martins2; 1Electronics Telecommunications and Computer, ISEL, Lisbon, Portugal; 2DCM, FCT/UNL, Lisboa, Portugal.

A19.4
Temperature Dependence of Leakage Current in Segmented a-Si:H n-i-p Photodiodes. Jeff Hsin Chang1, Tsu Chiang Chuang1, Yuri Vygranenko1, Kyung Ho Kim1, Denis Striakhilev1, Arokia Nathan2, Gregory Heiler3 and Timothy Treadwell3; 1Electrical and Computer Engineering, University of Waterloo, Waterloo, Ontario, Canada; 2London Centre for Nanotechnology, London, United Kingdom; 3Eastman Kodak Research Laboratories, Rochester, New York.

A19.5
High Performance Hydrogenated Amorphous Silicon n-i-p Photo-diodes on Glass and Plastic Substrates by Low-temperature Fabrication Process. Kyung Ho Kim1, Yuriy Vygranenko1, Jeff Hsin Chang1, Tsu Chiang Chuang1, Denis Striakhilev1, Arokia Nathan2, Gregory Heiler3, Mark Bedzyk3 and Timothy Tredwell3; 1Department of Electrical and Computer Engineering, University of Waterloo, Waterloo, Ontario, Canada; 2London Centre for Nanotechnology, University College London, London, United Kingdom; 3Eastman Kodak Research Laboratories, Rochester, New York.

A19.6
Investigation of the Performance of HgI2-Coated Direct Detection Flat Panel Imagers for Fluoroscopy and Radiography Hong Du, Larry E. Antonuk, Youcef El-Mohri, Qihua Zhao, Yi Wang and Mahdokht Behravan; Radiation Oncology, University of Michigan, Ann Arbor, Michigan.

A19.7
Nanoscale Thermal Analysis of Multilayer Thin Films for Packaging using the New Mode of Heated Tip-AFM. Nico Gotzen3,1, Kevin Kjoller1, Guy Van Assche3,1, William King2,1 and Roshan Shetty1; 1Anasys Instruments, Santa Barbara, California; 2Woodruff School of Mechanical Engg, Georgia Tech, Atlanta, Georgia; 3Dept of Polymer Chemistry, Vrije Universitaet, Brussels, Belgium.

 

SESSION A20: Poster Session: Electronics and Flexible Substrates
Chairs: Arokia Nathan and Jeffrey Yang
Thursday Evening, April 12, 2007
8:00 PM
Salon Level (Marriott)


A20.1
Mechnical Strains in Flexible a-Si:H TFT Electronics. Helena Gleskova1, Sigurd Wagner1 and Zhigang Suo2; 1Department of Electrical Engineering and Princeton Institute for the Science and Technology of Materials, Princeton University, Princeton, New Jersey; 2Division of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts.

A20.2
Multilayer Permeation Barrier for Flexible Displays Grown by Plasma-enhanced Chemical Vapor Deposition in a Single Chamber. Prashant Mandlik1, I-Chun Cheng1, Sigurd Wagner1, Teddy Zhou2 and Michael Hack2; 1Electrical Engineering and PRISM, Princeton University, Princeton, New Jersey; 2Universal Display Corp., Ewing, New Jersey.

A20.3
Direct Deposition of Polycrystalline Silicon Films on Plastic substrates at a Room Temperature Range using Catalytic CVD Technique. Wan-Shick Hong1, Chul-Lae Cho2,3, Dae-Hyun Lee2, Tae-Hwan Kim1, Kyung-Bae Park3, Jisim Jung3, Sang-Yoon Lee3 and Jang-Yeon Kwon3; 1Dept. of Nano Science and Technology, University of Seoul, Seoul, South Korea; 2Dept. of Electronics Engineering, Sejong University, Seoul, South Korea; 3Samsung Advanced Institute of Technology, Kyunggi-do, South Korea.

A20.4
Hot-wire Deposited Nanocrystalline silicon TFTs on Plastic Substrates. Farhad Taghibakhsh, Michael M. Adachi and Karim S. Karim; Engineering Science, Simon Fraser University, Burnaby, British Columbia, Canada.

 

SESSION A21: Poster Session: Electronic Properties and Metastability
Chairs: Arokia Nathan and Jeffrey Yang
Thursday Evening, April 12, 2007
8:00 PM
Salon Level (Marriott)


A21.1
Abstract Withdrawn
A21.2
Abstract Withdrawn

A21.3
Computer Modelling of Atmospheric Effects on the Conductivity of Silicon Thin Films. Vladimir Smirnov1, Steve Reynolds1,2, Charlie Main1, Friedhelm Finger2 and Reinhard Carius2; 1Division of Electronic Engineering and Physics, University of Dundee, Dundee, United Kingdom; 2IPV, Forschungszentrum Juelich, Juelich, Germany.

A21.4
Hole Mobility and Transport in Microcrystalline Silicon pin Junctions. Steve Reynolds1,2, Reinhard Carius2, Friedhelm Finger2 and Rudi Brüggemann3; 1Division of Electronic Engineering and Physics, University of Dundee, Dundee, Angus, United Kingdom; 2Institute of Photovoltaics, Forschungszentrum Jülich, Jülich, NRW, Germany; 3Fachbereich Physik, Carl von Ossietzky Universität Oldenburg, Oldenburg, Niedersachsen, Germany.

A21.5
Abstract Withdrawn
A21.6
Electronic Proeprties of Nanocrystalline Si Films and Devices. Vikram L Dalal and Kamal Muthukrishnan; Elec. and Computer Engr., Iowa State University, Ames, Iowa.

A21.7
Evolution of Structural and Electronic Properties in Boron-doped Nanocrystalline Silicon Thin Films. Hyun Jung Lee1, Andrei Sazonov1 and Arokia Nathan2; 1Electrical and Computer Engineering, University of Waterloo, Waterloo, Ontario, Canada; 2London Centre for Nanotechnology, University College London, London, United Kingdom.

 

SESSION A22: Poster Session: Structural Properties
Chairs: Arokia Nathan and Jeffrey Yang
Thursday Evening, April 12, 2007
8:00 PM
Salon Level (Marriott)


A22.1
Elastic Properties of Several Silicon Nitride Films. Xiao Liu1, Thomas H Metcalf1, Qi Wang2 and Douglas M Photiadis1; 1Naval Research Laboratory, Washington, District of Columbia; 2National Renewable Energy Laboratory, Golden, Colorado.

A22.2
New Fundamental Insights in the Infrared Spectroscopy on the Bulk Hydride Dipole Vibrations in Hydrogenated Silicon. Arno Hendrikus Marie Smets1 and Richard M.C.M. van de Sanden2; 1Research Center for Photovoltaics, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki, Japan; 2Department of Applied Physics, Eindhoven University of Technology, Eindhoven, Netherlands.

A22.3
Structural Analysis of Nanocrystalline Silicon Prepared by Hot-wire Chemical Vapor Deposition on Polymer Substrates Michael M Adachi1, Farhad Taghibakhsh1, Karen L. Kavanagh2 and Karim S. Karim1; 1School of Engineering Science, Simon Fraser University, Burnaby, British Columbia, Canada; 2Department of Physics, Simon Fraser University, Burnaby, British Columbia, Canada.

A22.4
Manupilating the Hydrogen-Bonding Configuration in ETP-CVD a-Si:H. M. A. Wank1, R. A. C. M. M. van Swaaij1 and M. C. M. van de Sanden2; 1DIMES-ECTM, Delft University of Technology, Delft, Netherlands; 2Department of Applied Physics, Eindhoven University of Technology, Eindhoven, Netherlands.

A22.5
Galvanic Corrosion of Polysilcon Thin Films Collin Becker, David C Miller and Conrad Stoldt; Mechanical Engineering, University of Colorado at Boulder, Boulder, Colorado.

 

SESSION A23: Poster Session: Nanocrystals, Nanoclusters and Nanowires
Chairs: Arokia Nathan and Jeffrey Yang
Thursday Evening, April 12, 2007
8:00 PM
Salon Level (Marriott)


A23.1
Tailored Deposition by LPCVD of Non-stoichiometric Si Oxides and their Application in the Formation of Si Nanocrystals Embedded in SiO2 by Thermal Annealing. Bruno Morana1, Juan Carlos González de Sande2, Andres Rodriguez1, Jesús Sangrador1, Tomás Rodríguez1, Manuel Avella3, Antonio Carmelo Prieto3 and Juan Jiménez3; 1Tecnología Electrónica, ETSI de Telecomunicación, Universidad Politécnica de Madrid, Madrid, Madrid, Spain; 2Ingeniería de Circuitos y Sistemas, EUIT de Telecomunicación, Universidad Politécnica de Madrid, Madrid, Madrid, Spain; 3Física de la Materia Condensada, ETSI Industriales, Universidad de Valladolid, Valladolid, Valladolid, Spain.

A23.2
Optical Properties of Porous Silicon Nanoclusters Encapsulated in Silica Gel Microfilms. Y. Posada1 and L. F. Fonseca2; 1Derpartment of Physical Sciences, University of Puerto Rico, San Juan, Puerto Rico; 2Department of Physics, University of Puerto Rico, San Juan, Puerto Rico.

A23.3
Silicon Nanowires Growth Studies Using Pulsed PECVD. John C.L. Cornish and David Parlevliet; Physics and Energy Studies, Murdoch University, Murdoch, Western Australia, Australia.

 

SESSION A24: Solar Cells III
Chair: Miroslav Zeman
Friday Morning, April 13, 2007
Room 3001 (Moscone West)


8:30 AM *A24.1
Recent Progress in Up-scaling of Amorphous and Micromorph Thin Film Silicon Solar Cells to 1.4 m2 Modules. Johannes Meier, Ulrich Kroll, Stephano Benagli and Joel Spitznagel et al.; Oerlikon Solar-Lab SA, Neuchâtel, Switzerland.

9:00 AM A24.2
Temperature Dependence of Silicon-based Thin Film Solar Cells on Their Intrinsic Absorber. Kobsak Sriprapha1, Kun Ho Ahn1,3, Seung Yeop Myong1, Akira Yamada1,2 and Makoto Konagai1; 1Physical electronics, Tokyo Institute of Technology, Tokyo, Japan; 2Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, Tokyo, Japan; 3Devices & Materials Lab., LG Electronics Institute of Technology, Seoul, South Korea.

9:15 AM A24.3
Efficient Thin-Film Polycrystalline-Silicon Solar Cells Based on Aluminium-Induced Crystallization. Ivan Gordon, Lode Carnel, Dries Van Gestel, Guy Beaucarne and Jef Poortmans; MCP/SSC, IMEC, Leuven, Belgium.

9:30 AM A24.4
Materials Optimization for Silicon Heterojunction Solar Cells Using Spectroscopic Ellipsometry. Dean Levi, Eugene Iwaniczko, Qi Wang and Howard M Branz; National Renewable Energy Laboratory, Golden, Colorado.

9:45 AM A24.5
Interdigitated Back Contact Silicon Heterojunction (IBC-SHJ) Solar Cell. Meijun Lu1,2, Stuart Bowden1, Ujjwal Das1, Michael Burrows1 and Robert Birkmire1,2; 1Institute of Energy Conversion, University of Delaware, Newark, Delaware; 2Department of Physics and Astronomy, University of Delaware, Newark, Delaware.

10:00 AM BREAK

 

SESSION A25: Film Growth II
Chair: Jeffrey Yang
Friday Morning, April 13, 2007
Room 3001 (Moscone West)


10:30 AM *A25.1
Plasma Synthesis of Silicon and Germanium Nanocrystals and Their Application to Thin Semiconductor Films. Uwe R. Kortshagen, Mechanical Engineering, University of Minnesota, Minneapolis, Minnesota.

11:00 AM A25.2
Time-resolved Cavity Ringdown Spectroscopy as a Monitoring Technique of Nanoparticles in Pulsed VHF Plasmas. Takehiko Nagai, Arno H. M. Smets and Michio Kondo; Research Center for Photovoltaics, National Institute of Advanced Industrial Science and Technology (AIST), Ibaraki, Tsukuba, Japan.

11:15 AM A25.3
In-situ X-ray Scattering Through the Boundary Layer in Mesoplasma Chemical Vapor Deposition of Epitaxial Silicon Films. Jose Mario Abante Diaz, Makoto Kambara and Toyonobu Yoshida; Department of Materials Engineering, The University of Tokyo, Tokyo, Japan.

11:30 AM A25.4
A Real-time Multi-spectroscopic Study of the a-Si/c-Si Interface Formation and Epitaxial Growth on H-terminated c-Si. Peter van den Oever, Joost Gielis, Bram Hoex, Richard van de Sanden and Erwin Kessels; Department of Applied Physics, Eindhoven University of Technology, Eindhoven, Netherlands.

11:45 AM A25.5
Influence of Ion Impact on Surface Passivation Properties of a-Si:H Films on c-Si Surfaces. Stefaan De Wolf and Michio Kondo; AIST, Tsukuba, Ibaraki, Japan.

 

Back To Top

Corporate Partners

AdAdAdAd