Symposium G: Complex Oxide Materials for Emerging Energy Technologies
Symposium Support
CrysTec GmbH
Oak Ridge National Laboratory
Rocky Mountain Vacuum Tech Inc
Complex Oxide Materials for Emerging Energy Technologies
April 26 - 29, 2011
Chairs
Ho Nyung Lee
|
|
Oak Ridge National Laboratory
|
Akira Ohtomo
|
|
Tokyo Institute of Technology
|
Gervasi Herranz
|
|
Institut de Ciencia de Materials de Barcelona ICMAB-CSIC
|
John Perkins
|
|
National Renewable Energy Laboratory
|
* Invited paper
SESSION G1: Transparent Conducting Oxides I
Chair: John Perkins
Tuesday Morning, April 26, 2011
Room 2006 (Moscone West)
8:30 AM *G1.1
Fundamental Properties and Applications of TiO2-based Transparent Conducting Thin Films. Tetsuya Hasegawa, Department of Chemistry, University of Tokyo, Tokyo, Japan; Kanagawa Academy of Science and Technology, Kasawaki, Kanagawa, Japan.
9:00 AM G1.2
Anisotropy of Electrochemical Properties of TiO2 (Anatase) in Orientations (101) and (001). Ladislav Kavan, J. Heyrovsky Institute of Physical Chemistry, Prague 8, Czech Republic.
9:15 AM G1.3
Anomalous X-ray Diffraction Studies of Novel Transparent Conducting Spinel Oxides. Joanna Bettinger1, Yezhou Shi1,2, Nicola Perry3, Arpun Nagaraja3, Thomas O. Mason3, John Perkins4, David Ginley4, Tula Paudel4, Alex Zunger4 and Michael Toney1; 11Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, Menlo Park, California; 2Materials Science and Engineering, Stanford University, Stanford, California; 3Materials Science and Engineering, Northwestern University, Evanston, Illinois; 4National Center for Photovoltaics, National Renewable Energy Laboratory, Golden, Colorado.
9:30 AM *G1.4
Closing the Loop between Experiment, Defect Models, and Theory for Transparent Conductive Oxides. Stephan Lany, National Renewable Energy Laboratory, Golden, Colorado.
10:00 AM BREAK
10:30 AM *G1.5
Development of New Transparent Conducting Oxides: Materials Design, Electronic Structure, Carrier Transport and Device Applications. Toshio Kamiya and Hideo Hosono; Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama, Kanagawa, Japan.
11:00 AM G1.6
Rational Synthesis of Indium Gallium Zinc Oxide Nanowires. Michael C. Moore1,2, Sean C. Andrews1,2, Melissa A. Fardy1,2, Shaul Aloni2, Velimir Radmilovic2,3 and Peidong Yang1,2; 1Department of Chemistry, University of California, Berkeley, California; 2Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California; 3National Center for Electron Microscopy, Lawrence Berkeley National Laboratory, Berkeley, California.
11:15 AM G1.7
Structural and Electrical Properties of Layer-by-Layer Grown Al-doped ZnO Films by Atomic Layer Deposition. Do-Joong Lee1, Hyun-Mi Kim1, Jang-Yeon Kwon1, Hyoji Choi1, Soo-Hyun Kim2 and Ki-Bum Kim1; 1Department of Materials Science and Engineering, Seoul National University, Seoul, Seoul, Korea, Republic of; 2School of Materials Science and Engineering, Yeungnam University, Gyeongsan-si, Gyeongsangbuk-do, Korea, Republic of.
11:30 AM *G1.8
Nanomaterial -based Transparent Conductive Coatings. Ilia N. Ivanov1, Matthew P. Garrett1, Rosario A. Gerhardt1,2, Alex A. Puretzky1 and Dave B. Geohegan1; 1Center for Nanophase Material Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee; 2School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA, Georgia.
SESSION G2: Oxides for Energy Conversion and Photochemical Processing
Chairs: Tetsuya Hasegawa and Andrew Rappe
Tuesday Afternoon, April 26, 2011
Room 2006 (Moscone West)
1:30 PM *G2.1
Advances in High Mobility Amorphous Oxide Semiconductors. Elvira M. Fortunato, Materials Science, FCT-UNL, Caparica, Portugal.
2:00 PM G2.2
High-dielectric Constant (K) Al2O3 / TiO2 Atomic Scale Multilayers for Supercapacitors for Energy Storage. Orlando Auciello1 and Wei Li2; 1Materials Science & Center for Nanoscale Materials, Argonne National Laboratory, Lemont, Illinois; 2Marerials Science Division, Argonne National Laboratory, Lemont, Illinois.
2:15 PM G2.3
Thermoelectricity in the Ultra-thin Limit. Jayakanth Ravichandran1,2, Pim B. Rossen3, Vincent B. Wu3, Arun Majumdar4 and R. B. Ramesh2,3,5; 1Applied Science and Technology, University of California, Berkeley, Berkeley, California; 2Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California; 3Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, California; 4ARPA-E, Department of Energy, Washington, District of Columbia; 5Department of Physics, University of California, Berkeley, Berkeley, California.
2:30 PM G2.4
Abstract Withdrawn
2:45 PM BREAK
3:15 PM G2.5
Doped SrTiO3 Anodes for Photoelectrochemical Water Splitting. Kavaipatti Balasubramaniam1, Shuzhi Wang1, Esther Llado1, Tyler Matthews2, Luca Corbellini2, Jayakanth Ravichandran1, Lin-Wang Wang1, Ramamoorthy Ramesh1,2,3 and Joel Ager1; 1Materials Sciences Division, Lawrence Berkeley Laboratory, Berkeley, California; 2Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, California; 3Department of Physics, University of California, Berkeley, Berkeley, California.
3:30 PM G2.6
Performance-limiting Factors in Spray-deposited Thin Film BiVO4 Photoanodes. Fatwa F. Abdi, Hans van 't Spijker and Roel Van de Krol; Chemical Engineering / Materials for Energy Conversion and Storage, Delft University of Technology, Delft, Netherlands.
3:45 PM G2.7
Mechanism of Visible-light Photocatalysis in Nitrogen-doped TiO2. Joel B. Varley1, Anderson Janotti2 and Chris G. Van de Walle2; 1Physics, University of California, Santa Barbara, Santa Barbara, California; 2Material, University of California, Santa Barbara, Santa Barbara, California.
4:00 PM G2.8
Ultrafast Anodic Growth of TiO2-nanotubes with Semi-metallic Properties. Robert Hahn, Himendra Jha, Doohum Kim and Patrik Schmuki; Material Science and Engineering, University Erlangen, Erlangen, Germany.
4:15 PM G2.9
Photochemical Reduction of CO2 Using CuGaO2 and CuGa1-xFexO2 (x=0.05, 0.01, 0.15, 0.2) Delafossite Oxides. Jonathan W. Lekse1, Kylee Underwood2, Christopher Matranga1 and James P. Lewis2; 1National Energy Technology Laboratory, Pittsburgh, Pennsylvania; 2Physics, West Virginia University, Morgantown, West Virginia.
SESSION G3: Poster Session: Complex Oxide Materials for Emerging Energy Technologies
Tuesday Evening, April 26, 2011
5:00 PM
Exhibition Hall (Moscone West)
G3.1
Improvement of Atmospheric Pressure Chemical Vapor Deposition Deposited TCO Films: The Surface Science Approach. Gilbere Mannie1,2, Joop van Deelen3, Hans Niemantsverdriet2 and Peter Thuene2; 1Material Innovation Institute (M2i), Delft, Netherlands; 2Eindhoven University of Technology, Eindhoven, Netherlands; 3TNO Science & Industry, Eindhoven, Netherlands.
G3.2
Reproducible Manipulation of High Electrical Conductivity on Hydrogenated a-InGaZnO by HIP Process. Won-Kyung Kim1, Seunghun Lee1, Yong Chan Cho2 and Se-Young Jeong1; 1Cogno-Mechatronics Engineering, Pusan National University, Miryang, Korea, Republic of; 2Nano Fusion Technology, Pusan National University, Miryang, Korea, Republic of.
G3.3
Transparent Conducting Amorphous In0.5Zn0.5Ox by Angled Sputtering. John D. Perkins, Thomas Gennett, Jennifer E. Leisch, Philip A. Parilla and David S. Ginley; National Renewable Energy Lab., Golden, Colorado.
G3.4
Characteristics of Zinc Based Ternary Oxide Thin Films for Transparent Electronics. Ji-Won Choi1, Keun Jung1,3, Won-Kook Choi2, Seok-Jin Yoon1, Hyun Jae Kim3 and Wan-Keun Bang4; 1Electronic Materials Center, Korea Institute of Science and Technology, Seoul, Korea, Republic of; 2Opto-electronic Materials Center, Korea Institute of Science and Technology, Seoul, Korea, Republic of; 3School of Electrical and Electronics Engineering, Yonsei University, Seoul, Korea, Republic of; 4Samwon Vacuum Co., Ltd., Gyeonggi-do, Korea, Republic of.
G3.5
Abstract Withdrawn
G3.6
Sn-doped In2O3 Films for Organic Electronic Devices. Mengwei Chen1, Harshan V. Nampoori1, Sushma Kotru1, Rachel M. Frazier2 and Dan Daly2; 1Department of Electrical and Computer Engineering, University of Alabama, Tuscaloosa, Alabama; 2AIME, University of Alabama, Tuscalooa, Alabama.
G3.7
Low-emissivity Coating of Amorphous Oxide/Ag/ Amorphous Oxide for Energy Saving Windows. Deuk-Hee Lee1,2, Dong-Hoon Park1, Sangsig Kim2 and Sang Yeol Lee1; 1Electronic Materials Center, Korea Institute of Science and Technology, Seoul, Korea, Republic of; 2Electrical Engineering and Institute for Nanoscience, Korea University, Seoul, Korea, Republic of.
G3.8
ZnO-based Single and Multilayer Transparent Conducting Oxides for Organic Photovoltaic Cells. Deuk-Hee Lee1,3, Dong-Hoon Park1, Sangsig Kim3, Sang Yeol Lee1, Ha-Na Choi2,4, Sung-Hyun Kim4 and Kyungkon Kim2; 1Electronic Materials Center, Korea Institute of Science and Technology, Seoul, Korea, Republic of; 2Solar Cells Center, Korea Institute of Science and Technology, Seoul, Korea, Republic of; 3Electrical Engineering and Institute for Nanoscience, Korea University, Seoul, Korea, Republic of; 4College of Engineering, Korea University, Seoul, Korea, Republic of.
G3.9
Nanoengineered Al:ZnO Films by Pulsed Laser Deposition. Carlo S. Casari1,2, Paolo Gondoni1, Matteo Ghidelli1, Fabio Di Fonzo2, Valeria Russo1, Carlo E. Bottani1,2 and Andrea Li Bassi1,2; 1Dept. of Energy, Politecnico di Milano, Milan, Italy; 2Center for NanoScience and Technology CNST of IIT@PoliMI, IIT Italian Institute of Technology, Milan, Italy.
G3.10
Transparent Conductive Al-doped ZnO (AZO) Thin Film Were Deposited at 100 Degree Centigrade by Laser Induced High Current Pulsed Arc (LIHCPA) from a Al-Zn Alloy Target. Jin-Bao Wu1, Chao-Ying Chen1, Shan Haw Chiou1, Hong-Yih Tseng2, Tien-Jung Huang1, Ming-Sheng Leu1 and Ying-Cherng Lu2; 1Industrial Technology Research Institute, Chutung. Hsinchu, Taiwan; 2BeyondPV, Taina, Taiwan.
G3.11
Pt-based Schottky Contacts to Amorphous Gallium Indium Zinc Oxides. Seongjun Kim1, Kyoung-Kook Kim2 and Hyunsoo Kim1; 1Chonbuk National University, Jeonju, Korea, Republic of; 2Korea Polytechnique University, Jeonju, Korea, Republic of.
G3.12
Unusual Enhancement of Thermoelectric Power Factor in the InGaO3(ZnO)m Layered Structure Using Plasma Treatment. Hyung Koun Cho and Dong Kyu Seo; School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do, Korea, Republic of.
G3.13
Complex Metal Oxides : Search for High Dielectric Constant and Photocatalytic Materials. Debashree Das, Masood A. Nath and Ashok K. Ganguli; Chemistry, IIT Delhi, New Delhi, India.
G3.14
In-Situ Monitoring of the Oxidation of Sputtered TaNx Thin Films by Optical Spectroscopy for Photo-electrochemical Water Splitting. Ali Dabirian and Roel van de Krol; Chemical Engineering / Materials for Energy Conversion and Storage, Delft University of Technology, Delft, Netherlands.
G3.15
RF-sputtered ZnO Thin Films: The Tailoring of Structural, Electrical and Optical Properties. Cristina Besleaga1, George E. Stan2, Lucian Ion1 and Stefan Antohe1; 1MDEO, Faculty of Physics, University of Bucharest, Magurele, Ilfov, Romania; 2Nanoscale Condensed Matter Physics Laboratory, National Institute of Materials Physics, Magurele, Ilfov, Romania.
G3.16
Abstract Withdrawn
G3.17
Abstract Withdrawn
G3.18
Abstract Withdrawn
G3.19
Electrical Transport Through Spinel CoNi2O4 Nanocolumns Embedded in Epitaxial Perovskite BaTiO3. Ilan Stern, Xiaolan Zhou, Ludi Miao, Punam Silwal and Dae H. Kim; Physics and Engineering Physics, Tulane University, New Orleans, Louisiana.
G3.20
Steady-state and Transient Electron Transport in Zinc Oxide: Recent Progress. Walid A. Hadi2, Mchael S. Shur3, Lester F. Eastman4 and Stephen K. O'Leary1; 1School of Engineering, The University of British Columbia, Kelowna, British Columbia, Canada; 2Department of Electrical and Computer Engineering, University of Windsor, Windsor, Ontario, Canada; 3Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, New York; 4School of Electrical Engineering, Cornell University, Ithaca, New York.
G3.21
Effect of RTA Process on Zn1-xCdxO Films Grown by Radio-frequency Magnetron Co-sputtering. Jihyun Yu1, Junghyun Kim1, Hyunjin Yang1, Taesoo Jeong1, Changju Youn1 and Kwangjoon Hong2; 1Chonbuk national University, Jeonju, Korea, Republic of; 2Chonsun University, Gwangju, Korea, Republic of.
G3.22
Study of ALD ZnO/MOCVD ZnO/ALD ZnO Sandwiched Active Layer of Transparent ZnO TFT. Yi-Ming Lai1, Wen-Chih Chang1, Sun-Zen Chen2, Tai-Bor Wu1 and Su-Jien Lin1; 1Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan; 2Center for Nanotechnology, Materials Science, and Microsystems, National Tsing Hua University, Hsinchu, Taiwan.
G3.23
Nanostructured Multiferroic Materials for Future Optoelectronics and Energy-related Nanodevices. Riad Nechache1,2, Enrico Traversa3,2, Federico Rosei2 and Silvia Licoccia1; 1Universit¨¤ degli Studi di Roma Tor Vergata, Rome, Italy; 2Energy, Materials & Telecommunications, INRS-EMT, Varennes, Quebec, Canada; 3International Research Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), Tsukuba, Ibaraki, Japan.
G3.24
Growth of AZO on Flexible Substrate Using ALD System as a Transparent Conducting Oxide for Solar Cells. Tara Dhakal, Abhishek Nandur, Rachel Christian, Daniel Vanhart, Parag Vasekar, Seshu Desu and Charles Westgate; Center for Autonomous Solar Power (CASP), SUNY-Binghamton, Binghamton, New York.
G3.25
Theoretical Studies of Pb-free Perovskite Solid Solutions. Joseph W. Bennett1, Ilya Grinberg2, Peter K. Davies3 and Andrew M. Rappe2,3; 1Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey; 2Chemistry, University of Pennsylvania, Philadelphia, Pennsylvania; 3Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania.
G3.26
Characterization of Space-divided Atomic Layer Deposition by Depositing Aluminum Oxide Thin Films and Simulation. Sungin Suh, Seok-Jun Won, Yu Jin Choi and Hyeong Joon Kim; Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul, Korea, Republic of.
G3.27
Rapid Thermal Annealed Al-doped ZnO Film for a UV Detector. Joondong Kim1, Ju-Hyung Yun2, Sang-Won Jee3, Wayne Anderson2, Jung-Ho Lee3, Chang Su Woo1 and Hak-Joo Lee1; 1Nano-Mechanical Systems Research Center, Korea Institute of Machinery and Materials, Daejeon, Korea, Republic of; 2Electrical Engineering, University at Buffalo, State University of New York, Buffalo, New York; 3Materials and Chemical Engineering, Hanyang University, Ansan, Korea, Republic of.
SESSION G4: Polar Oxides for Energy Applications
Chairs: Stephen Pennycook and Gyu-Chul Yi
Wednesday Morning, April 27, 2011
Room 2006 (Moscone West)
8:30 AM *G4.1
Surface Defects and Conduction in Polar Oxide Heterostructures. Peter B. Littlewood, Nick C. Bristowe and Emilio Artacho; Physics, Cambridge University, Cambridge, United Kingdom.
9:00 AM G4.2
Metal-insulator Transition at the Interface of LaAlO3/SrTiO3 Induced by H2O Adsorption. Yun Li1,2, Rokyeon Kim1, Jiyeon Kim1 and Jaejun Yu1,3; 1Department of Physics and Astronomy, Seoul National University, Seoul, Korea, Republic of; 2School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon, Korea, Republic of; 3National Renewable Energy Laboratory, Golden, Colorado.
9:15 AM G4.3
Dimensional Transition of Quantum Transport in Delta-doped SrTiO_{3} Superlattices for Transparent Conducting Oxides. Suyoun Lee1,2, Sung Seok Ambrose Seo1, J. H. You3 and Ho Nyung Lee1; 1Material Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee; 2Electronic Materials Center, Korea Institute of Science and Technology, Seoul, Korea, Republic of; 3Department of Mechanical Engineering, Southern Methodist University, Dallas, Texas.
9:30 AM G4.4
Controlling Band Alignments by Engineering Interface Dipoles at Oxide Hheterointerfaces. Takeaki Yajima1, Yasuyuki Hikita1, Makoto Minohara1,2, Hiroki Sato1, Christopher Bell1, Hiroshi Kumigashira3, Masaharu Oshima3 and Harold Y. Hwang1,2,4; 1Department of Advanced Materials Science, University of Tokyo, Kashiwa, Chiba, Japan; 2Japan Science and Technology Agency, Kawaguchi, Saitama, Japan; 3Department of Applied Chemistry, University of Tokyo, Bunkyo-ku, Tokyo, Japan; 4Department of Applied Physics, Stanford University, Stanford, California.
9:45 AM BREAK
10:15 AM *G4.5
Predicting Accurate Band Gaps Using Post-DFT Methods-Theoretical Studies of Highly Polar Semiconducting Oxides for Energy Applications. Andrew M. Rappe1, Gaoyang Gou1, Joseph W. Bennett1,2 and Hiroyuki Takenaka1; 1Chemistry, University of Pennsylvania, Philadelphia, Pennsylvania; 2Physics and Astronomy, Rutgers University, Piscataway, New Jersey.
10:45 AM G4.6
Band Gap Engineering in LaCoO3 Substituted Bi4Ti3O12 Thin Films for PV Application. Woo Seok Choi, Taekjib Choi, Matthew F. Chisholm, Gerald E. Jellison and Ho Nyung Lee; Materials Science & Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee.
11:00 AM G4.7
Thermal Energy Harvesting with Epitaxial Ferroelectric Thin Films. Karthik Jambunathan and Lane W. Martin; Materials Science and Engineering, University of Illinois, Urbana-Champaign, Urbana, Illinois.
11:15 AM G4.8
High Rectification in Oxide p-i-n Nanojunctions. Taekjib Choi1, Lu Jiang1,2, Suyuon Lee1,3 and Ho Nyung Lee1; 1Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee; 2Department of physics and astronomy, University of Tennessee, Knoxville, Tennessee; 3Korea institute of science and technology, Seoul, Korea, Republic of.
11:30 AM *G4.9
Topological Size Effects in Electron Transport through Ferroelectric Surfaces. Peter Maksymovych, Oak Ridge National Laboratory, Oak Ridge, Tennessee.
SESSION G5: Energy Harvesting and Storage I
Chairs: Toshio Kamiya and Peter Littlewood
Wednesday Afternoon, April 27, 2011
Room 2006 (Moscone West)
1:30 PM *G5.1
ZnO Nanostructures on Graphene Layers. Gyu-Chul Yi, Physics, Seoul National University, Seoul, Korea, Republic of.
2:00 PM G5.2
Studying Charge Transport in ZnO Nanowire Thin Films Using Single Nanowire/Nanowire Junction Measurements. Sujay A. Phadke1,3, Saniya LeBlanc2, Young Min Park3, Takashi Kodama2, Jung Yong Lee4, Peter Peumans4, Kenneth Goodson2 and Alberto Salleo3; 1Mechanical Engineering, Stanford University, Stanford, California; 2Mechanical Engineering, Stanford University, Stanford, California; 3Materials Science and Engineering, Stanford University, Stanford, California; 4Electrical Engineering, Stanford University, Stanford, California.
2:15 PM G5.3
Plasmon Assisted Energy Transfer in ZnO/ZnCdO Quantum Wells and Metal Quantum Dots Hetero-structures. Hitoshi Tabata, Hitoaki Matsui and Wasanthamala Badalawa; The University of Tokyo, Tokyo, Japan.
2:30 PM G5.4
Piezoelectric-nanowire-enabled Power Source for Driving Wireless Microelectronics. Sheng Xu, Benjamin J. Hansen and Zhong Lin Wang; School of Materials Science & Engineering, Georgia Institute of Technology, Atlanta, Georgia.
2:45 PM G5.5
Optimizing the Power Output of a ZnO Photocell by Piezopotential. Youfan Hu1, Yan Zhang1,2, Yanling Chang1, Robert L. Snyder1 and Zhong L. Wang1; 1School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia; 2Institute of Theoretical Physics, Lanzhou University, Lanzhou, China.
3:00 PM BREAK
3:30 PM G5.6
Hydrogen in ZnO: Anionic Hydrogen, Hidden Hydrogen, and Persistent Photoconductivity. Mao-Hua Du, Materials Science and Technology Division and Center for Radiation Detection Materials and Systems, Oak Ridge National Laboratory, Oak Ridge, Tennessee.
3:45 PM G5.7
Properties of Nitrogen Atoms in ZnO. Norbert H. Nickel, Felice Friedrich and Marc A. Gluba; Helmholtz-Zentrum Berlin f¨¹r Materialien und Energie, Berlin, Germany.
4:00 PM *G5.8
Nanostructured Materials for Energy Applications. Igor Kosacki1 and Christopher M. Rouleau2; 1Shell Global Solutions, Westhollow Technology Center, Houston, Texas; 2Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee.
4:30 PM G5.9
Atomistic Simulations of Oxygen Vacancy Migration in Strained CeO2. Roger De Souza, Institute of Physical Chemistry, RWTH Aachen University, Aachen, Germany.
4:45 PM G5.10
Surface Properties, Crystal Morphology, and Reactivity of La2Zr2O7-Based Cathode Infiltrate in Solid Oxide Fuel Cells: A Theoretical Study. Yves A. Mantz, DOE National Energy Technology Laboratory, Morgantown, West Virginia.
SESSION G6: Energy Harvesting and Storage II
Chairs: Joe Berry and Thomas Mason
Thursday Morning, April 28, 2011
Room 2006 (Moscone West)
8:00 AM *G6.1
Aberration-corrected STEM and First-principles Theory: Insights into Energy Materials. Stephen Pennycook1,2, Maria Varela1, Timothy Pennycook2,1, Wu Zhou1,2, Juan Carlos Idrobo1,2, Jaekwang Lee1,2, Hye Jung Chang1, Donovan Leonard1, Mark Oxley1,2, Albina Borisevich1 and Sokrates Pantelides2,1; 1Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee; 2Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee.
8:30 AM G6.2
Photovoltaic Energy Conversion Based on Strongly Correlated Oxides. Gesine Saucke1, Benedikt Ifland1, Dong Su2, Yimei Zhu2, Constanze Thees1, Joerg Hoffmann1 and Christian Jooss1; 1Institute of Materials Physics, University of Goettingen, Goettingen, Germany; 2Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York.
8:45 AM *G6.3
Novel Functionalities of Complex Oxide Iinterfaces. Jacobo Santamaria, U. Complutense, Madrid, Spain.
9:15 AM G6.4
Origin of Colossal Ionic Conductivity in YSZ/STO Multilayers. Timothy J. Pennycook1,2, Matthew J. Beck1, Mark P. Oxley1,2, Javier Garcia-Barriocanal3, Flavio Bruno3, Carlos Leon3, Jacobo Santamaria3, Maria Varela2,3, Stephen J. Pennycook2,1 and Sokrates T. Pantelides1,2; 1Physics and Astronomy, Vanderbilt University, Nashville, Tennessee; 2Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee; 3GFMC, U. Complutense, Madrid, Spain.
9:30 AM BREAK
10:00 AM *G6.5
Non-compensated n-p Codoping of Wide Band Gap Oxide Semiconductors for Enhanced Solar Energy Conversion and Storage. Zhenyu Zhang, Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee; Department of Physics and Astronomy, University of Tennessee, Knoxville, Tennessee; ICQD, University of Science and Technology of China, Hefei, Anhui, China.
10:30 AM G6.6
Band Gap Engineering in Oxides: Highly Mismatched II-O-VI Alloys. Marie Mayer1,2, Derrick Speaks1,2, Kin Man Yu1, Samuel S. Mao1, Eugene Haller1,2 and Wladek Walukiewicz1; 1Lawrence Berkeley National Laboratory, Berkeley, California; 2Materials Science and Engineering, University of California, Berkeley, Berkeley, California.
10:45 AM G6.7
Abstract Withdrawn
11:00 AM G6.8
Controlling Electronic Structure of Cu2O Nanocrystals for Photovoltaic and Photocatalytic Applications. Sungki Lee and Lane W. Martin; Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois.
11:15 AM G6.9
Nanostructured All-oxide (Cu2O-ZnO) Photovoltaics: Recent Enhancements in Charge Collection and Fundamental Limitations. Kevin P. Musselman1,2, Andreas Wisnet3, Diana C. Iza2, Holger C. Hesse4, Christina Scheu3, Lukas Schmidt-Mende4 and Judith L. MacManus-Driscoll2; 1Physics, University of Cambridge, Cambridge, United Kingdom; 2Materials Science, University of Cambridge, Cambridge, United Kingdom; 3Chemistry, Ludwig-Maximilians University, Munich, Germany; 4Physics, Ludwig-Maximilians University, Munich, Germany.
11:30 AM G6.10
Electrical and Optical Properties of CdTe-ZnO Nanocomposite Thin Films as Tunable Optoelectronic Materials for Photovoltaic Energy Conversion. Barrett Potter, Russell Beal, Grace Shih, Carolyn Swanborg and Cary Allen; University of Arizona, Tucson, Arizona.
11:45 AM G6.11
Abstract Withdrawn
SESSION G7: Transparent Conducting Oxides II: Photovoltaics
Chairs: Jacobo Santamaria and Zhenyu Zhang
Thursday Afternoon, April 28, 2011
Room 2006 (Moscone West)
1:30 PM *G7.1
Functional Oxide Materials for Photovoltaic Applications. Ajaya K. Sigdel1, Edwin Widjonarko1, Yi Ke1, Xerxes Steirer1, Paul F. Ndione1, Andriy Zakutayev1, Jens Meyer2, Erin Ratcliff3, Dana C. Olson1, Matthew L. Lloyd1, Neal Armstrong3, Thomas Gennett1, Antoine Kahn2, David S. Ginley1 and Joseph Berry1; 1NCPV, NREL, Golden, Colorado; 2Dept. of Electrical Engineering, Princeton University, Princeton, New Jersey; 3Dept. of Chemistry, College of Optical Sciences, University of Arizona, Tuscon, Arizona.
2:00 PM G7.2
MoO3/Ag/MoO3 Transparent Electrodes for Coherent Light Trapping in Thin Film Organic Solar Cells. Nicholas P. Sergeant1, Barry P. Rand2, Paul Heremans2,3 and Peter Peumans1; 1Electrical Engineering, Stanford University, Stanford, California; 2Imec vzw, Leuven, Belgium; 3Electrical Engineering, K.U.Leuven, Leuven, Belgium.
2:15 PM G7.3
P-type Spinel Oxides as Hole Transport Layers for Organic Photovoltaic Devices. Paul F. Ndione1, Andres Garcia1, Nicodemus E. Widjonarko1,2, Ajaya K. Sigdel1,3, Andriy Zakutayev1, John D. Perkins1, Philip A. Parilla1, Dana C. Olson1, David S. Ginley1 and Joseph J. Berry1; 1National Renewable Energy Laboratory, Golden, Colorado; 2Department of Physics, University of Colorado, Boulder, Colorado; 3Department of Physics and Astronomy, University of Denver, Denver, Colorado.
2:30 PM G7.4
Graded-crystallinity Transition-metal Oxide Blocking Layers for Dye-sensitized and Polymer Solar Cells. Robert Gunning, Pablo Docampo, Michael L. Lee and Henry J. Snaith; Condensed Matter Physics, University of Oxford, Oxford, Oxon, United Kingdom.
2:45 PM BREAK
3:15 PM *G7.5
Highly Efficient Dye-sensitized Solar Cells. Liyuan Han, Advanced Photovoltaic Center, National Institute for Materials Science, Tsukuba-city, Ibaraki, Japan.
3:45 PM G7.6
High Performance Transparent Photosensor Array Utilizing Triple Oxide Semiconductor Thin Film Transistor. Seung-Eon Ahn, Sanghun Jeon and Ihun Song; Samsung Advanced Institute of Technology, Suwon, Korea, Republic of.
4:00 PM G7.7
Instabilities of Amorphous-InGaZnO TFTs Characterized by Photo-excited Charge-collection Spectroscopy: Channel Thickness Effects. Youn-Gyoung Chang1,2, Dae-Hwan Kim2, Gunwoo Ko1, Jae Hoon Kim1 and Seongil Im1; 1Institute of Physics and Applied Physics, Yonsei University, Seoul, Korea, Republic of; 2R&D Center, LG Display, Paju-si, Korea, Republic of.
4:15 PM *G7.8
New (Old?) Methodologies for Analyzing High-performance Oxide Semiconductors for Energy Conversion Applications. Qimin Zhu1, E. Mitchell Hopper1, Brian J. Ingram2 and Thomas O. Mason1; 1Materials Science & Engineering, Northwestern University, Evanston, Illinois; 2Chemical Sciences and Engineering Division, Argonne National Laboratory, Argonne, Illinois.
SESSION G8: Poster Session: Complex Oxide Materials for Emerging Energy Technologies
Thursday Evening, April 28, 2011
8:00 PM
Salon Level (Marriott)
G8.1
Electron Beam Generated Oxide Nanostructures Arrays on Insulating Single Crystal Substrates for Flexoelectric Applications. Josh J. Malowney1,2, Gustau Catalan4, Albert Calleja1, Jordi Arbiol1,3, Roger Guzman1, Francesc Belarre1, Jordi Llobert2, Narcis Mestres1, Teresa Puig1, Xavier Borrise2, Joan Bausells2 and Xavier Obradors1; 1Superconductors, Institute of Materials Science of Barcelona (ICMAB-CSIC), Barcelona, Spain; 2National Center of Microelectonics (CNM-CSIC), Barcelona, Spain; 3Catalan Institution for Research and Advanced Studies (ICREA), Barcelona, Spain; 4Center of Investigation in Nanoscience and Nanotechnology (CIN2-CSIC)), Barcelona, Spain.
G8.2
Structural and Magnetic Properties of La0.7Sr0.3Mn1-xNixO3 (x=0.5, 0.1, 0.2, 0.3, 0.4). Thomas F. Creel1, Oran A. Pringle1, William J. James2, William B. Yelon2, Satish K. Malik3, Sylvio Quezado3, Jinbo Yang4, Jagat Lamsal5 and Mehmet Kahveci5; 1Physics, Missouri University of Science and Technology, Rolla, Missouri; 2Chemistry, Missouri University of Science and Technology, Rolla, Missouri; 3International Institue of Phusics(IIP), UFRN, Natal, Brazil; 4State Key Laboratory for Artificial Microstructure and Mesoscopic Physics and School of Physics, Beijing, China; 5Department of Physics and Astronomy, Columbia, Missouri.
G8.3
Abstract Withdrawn
G8.4
Ab initio Study of the Hydrogen Molecule on ZnO Surfaces. Po-Liang Liu, Yen-Ting Wu and Yu-Jin Siao; Graduate Institute of Precision Engineering, National Chung Hsing University, Taichung, Taiwan.
G8.5
Ab initio Based Multiscale Modeling of the Effect of Kinetic Demixing on Sr Segregation in La1-xSrxMnO3. Brian Puchala, Yueh-Lin Lee and Dane Morgan; Materials Science and Engineering, University of Wisconsin - Madison, Madison, Wisconsin.
G8.6
Separation of Ionic and Electronic Contributions to Charge Transport in Complex-oxide Thin Films Using c-AFM and Near-field Scanning Microwave Microscopy. Alexander Tselev, Amit Kumar, Mike Biegalski and Sergei V. Kalinin; Oak Ridge National Laboratory, Oak Ridge, Tennessee.
G8.7
Combinatorial Conductivity Analysis of Solid Oxide Fuel Cell Electrolyte Candidates. Natalie A. Becerra, Material Science and Engineering, Cornell University, Ithaca, New York.
G8.8
Engineering LixAlySizO Thin Films as a Solid Electrolyte for 3D Microbatteries. Ya-Chuan Perng1, Jea Cho1, Daniel Membreno2, Bruce S. Dunn2, Michael F. Toney3 and Jane P. Chang1; 1Chemical and Biomolecular Engineering, University of California, Los Angeles, Los Angeles, California; 2Materials Science and Engineering, University of California, Los Angeles, Los Angeles, California; 3Stanford Synchrotron Radiation Lightsource, Menlo Park, California.
G8.9
Direct Observation of Point Defects and Impurities in LiFePO4. Wu Zhou1,2, Jaekwang Lee1,2, Juan-Carlos Idrobo1,2, Sokrates T. Pantelides1,2 and Stephen J. Pennycook2,1; 1Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee; 2Materials Science & Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee.
G8.10
Continuous Supercritical Hydrothermal Synthesis of Lithium Iron Phosphate (LiFePO4) Nanoparticles and Their Electrochemical Properties. Jaehoon Kim, Korea Institute of Science and Technology, Seoul, Korea, Republic of.
G8.11
TiO2 Nanotube Arrays Sensitized with Bi2MoO6 for Hydrogen Energy. Ulugbeck A. Shaislamov and BeeLyong Yang; Dept of Information Nano Materials, Kumoh National Institute of Technology, Gumi, Geongbuk, Korea, Republic of.
G8.12
Abstract Withdrawn
G8.13
Heterojunction Diodes for Solar Cell Applications Using Atomic Layer Deposition (ALD) of p-V2O5 and n-ZnO. Parag Banerjee1,2, Xinyi Chen1,2, Keith Gregorczyk1,2, Laurent H. Lecordier4 and Gary W. Rubloff1,2,3; 1Materials Science and Engineering, University of Maryland, College Park, Maryland; 2Institute for Systems Research, University of Maryland, College Park, Maryland; 3Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, Maryland; 4Cambridge Nano Tech Inc., Boston, Massachusetts.
G8.14
Band Structure Engineering of ZnO Nanowire Arrays by Hydrothermal Synthesis Technique. Paresh R. Shimpi, Kuo-ting Liao, Joshua Leibowitz and Pu-Xian Gao; Institute of Material science, IMS., University of connecticut, Storrs, Connecticut.
G8.15
The Effect of Codoping on the Structural and Optical Properties of TiO2 Films Prepared by Pulsed Laser Deposition. Murari Regmi and Gyula Eres; Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee.
G8.16
Ab Initio Calculations of Defects in Gallium Oxide. Tobias Zacherle1, Peter C. Schmidt2 and Manfred Martin1; 1Institute of Physical Chemistry, RWTH Aachen University, Aachen, Germany; 2Institute of Physical Chemistry, Technical University of Darmstadt, Darmstadt, Germany.
G8.17
Multi-generation Hierarchical ZnO Nanowire Growth for High Efficiency DSSC Fabrication. Hyun Wook Kang1, Seung Hwan Ko1, Daeho Lee2, Koohyun Nam1, Hyung Jin Sung1 and Cstas P. Grigoropoulos2; 1Applied Nano Tech & Science Lab, KAIST, Daejeon, Korea, Republic of; 2Laser Thermal Lab, University of California, Berkeley, California.
G8.18
3D-transparent Conductive Oxides with SnO2 Nanorod Arrays. Hui Huang, Chiew Keat Lim, Man Siu Tse and Ooi Kiang Tan; School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, Singapore.
G8.19
Solvothermal Synthesis of Cd2SnO4 For Dye Sensitized Solar Cells. Reshma K. Bhosale and Sarika Phadke; Physical and Materials Chemistry Division, National Chemical Laboratory, Pune, Maharashtra, India.
G8.20
Inorganic Light Absorbing Semiconductor for Solid State Self-sensitized Solar Cells. Chiew Keat Lim, Ooi Kiang Tan and Man Siu Tse; Nanyang Technological University, Singapore, Singapore.
G8.21
Metal-doped Cobalt Oxide Nanostructures for Solution-processed Solid-state Dye-sensitized Solar Cells. Chun-Te Ho1 and Tri-Rung Yew2; 1Materials Science and Engineering, National Tsing Hua University, Hsinchu City, Taiwan; 2Materials Science and Engineering, National Tsing Hua University, Hsinchu City, Taiwan.
G8.22
Abstract Withdrawn
G8.23
Transferred to G3.27
G8.24
An Amorphous Indium Gallium Zinc Oxide Solar-blind Thin Film Phototransistor. Chiu-Jung Chiu, Wen-Yin Weng, Sheng-Po Chang and Shoou-Jinn Chang; Nation Cheng Kung University, Tainan, Taiwan.
G8.25
Abstract Withdrawn
SESSION G9/S8: Joint Session: Plasma-based Synthesis of TCOs and Oxides for Emerging Technologies I
Chairs: John Perkins and Yuzo Shigesato
Friday Morning, April 29, 2011
Room 2006 (Moscone West)
8:00 AM G9.1/S8.1
Study of Magnetic Field Shielded Sputtering Effect as a Room Temperature High Quality ITO Thin Film Deposition Process for Plastic Microelectronic Device. You Jong Lee, YunSung Jang, JunYoung Lee and MunPyo Hong; Dept. of Display and Semiconductor Physics, Korea University, Chungnam, Korea, Republic of.
8:15 AM G9.2/S8.2
Low Temperature Transparent ITO Contacts on n-GaSb and n-InAs for Mid-IR Applications. Andreas Karsaklian dal Bosco2, Jonathan Sadok2, Samuel Margueron1, Sidi Ould Saad Hamady1, Mouad Bouirig2, Jean-Claude Petit1, Joel Jacquet1,2 and Frederic Genty1,2; 1LMOPS, Metz, France; 2SUPELEC, Metz, France.
8:30 AM *G9.3/S8.3
Reactive Magnetron Sputtering of TCO Thin Films: Role of Energetic Particle (Ion) Bombardment. Klaus Ellmer and Thomas Welzel; Solar Fuels, Helmholtz-Zentrum Berlin, Berlin, Germany.
9:00 AM G9.4/S8.4
Modelling the Sputter Deposition of Thin Film Photovoltaics Using Long Time Scale Dynamics Techniques. Sabrina Blackwell1, S. D. Kenny1, R. Smith1 and J. M. Walls2; 1Department of Mathematical Sciences, Loughborough University, Loughborough, United Kingdom; 2Department of Electronic and Electrical Engineering, Loughborough University, Loughborough, United Kingdom.
9:15 AM G9.5/S8.5
RF-superimposed DC Magnetron Sputtering to Improve Amorphous Indium Zinc Oxide Transparent Conductors. Thomas Gennett, Marie C. Galante, Phillip A. Parilla, John D. Perkins and David S. Ginley; National Renewable Energy Laboratory, Golden, Colorado.
9:30 AM G9.6/S8.6
Incorporation of Al in ZnO by Pulsed Reactive Magnetron Sputtering: Electrical Properties, Film Structure and Dopant Activation. Steffen Cornelius, Mykola Vinnichenko, Andreas Kolitsch and Wolfhard Moeller; Research Center Dresden-Rossendorf, Dresden, Germany.
9:45 AM G9.7/S8.7
N-type Doping in ZnMgO: A Path Towards Conductivity-bandgap-tTunable TCO System. Yi Ke1,2, David Ginley1, Ryan O'Hayre2, Joseph Berry1 and Andriy Zakutayev1; 1National Renewable Energy Laboratory, Golden, Colorado; 2Metallurgy and Material Science Engineering Department, Colorado School of Mines, Golden, Colorado.
10:00 AM BREAK
10:30 AM G9.8/S8.8
Effects of Oxygen Plasma Treatment before, during, and after Growth of ZnO:Al by DC Cathodic Arc Deposition. Rueben J. Mendelsberg, Sunnie H. Lim, Yuankun Zhu, Delia J. Milliron and Andre Anders; Lawrence Berkeley National Laboratory, Berkeley, California.
10:45 AM G9.9/S8.9
Change in Surface Composition, Work Function and Wettability of Modified ZnO and Ultra-smooth ITO Depending on the Anchoring Group and Dipole Moment of the Small Molecule Modifier. Mariola R. Macech1, Erin Ratcliff1, Sergio Paniagua2, Seth R. Marder2, Bernard Kippelen3 and Neal R. Armstrong1; 1Chemistry and Biochemistry, University of Arizona, Tucson, Arizona; 2School of Chemistry and Biochemistry, Georgia Institut of Technology, Atlanta, Georgia; 3School of Electrical Engineering, Georgia Institut of Technology, Atlanta, Georgia.
11:00 AM G9.10/S8.10
High Haze and Low Resistive MgO/AZO Bi-layer Transparent Conducting Oxide for Thin Film Solar Cells. Dong-Won Kang1, Jong-Seok Woo1, Seung-yoon Lee2, Hyun-Ja Shim2, Heon-Min Lee2 and Min-Koo Han1; 1Seoul National University, Seoul, Korea, Republic of; 2LG Electronics, Seoul, Korea, Republic of.
11:15 AM G9.11/S8.11
Al-doped ZnO Films Grown by Reactive Magnetron Sputtering: Properties Evolution and Secondary Phase Formation. Mykola Vinnichenko1, Steffen Cornelius1, Matthias Krause1, Raul Gago2, Frans Munnik1, Andreas Kolitsch1 and Wolfhard Moeller1; 1Institute of Ion Beam Physics and Materials Research, Helmholz-Zentrum Dresden-Rossendorf, Dresden, Germany; 2Instituto de Ciencia de Materiales de Madrid (CSIC), Madrid, Spain.
11:30 AM G9.12/S8.12
Physical Properties of Sb-doped BaSnO3 : A New Transparent Conducting Oxide. Hyung Joon Kim, Jiyeon Kim, Woo Seok Choi, Da Woon Jeong, Jaejun Yu, Tae Won Noh and Kee Hoon Kim; Department of Physics and Astronomy, Seoul National University, Seoul, Korea, Republic of.
11:45 AM G9.13/S8.13
Investigation of Transparent Conducting Oxide Thin Films Deposited on Insulating Ceramic Materials. Ramesh M. Krishna1, Timothy C. Hayes1, Adrian Mendez Torres2, Kyle S. Brinkman2 and Krishna C. Mandal1; 1Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina; 2Savannah River National Laboratory, Aiken, South Carolina.
SESSION G10/S9: Joint Session: Plasma-based Synthesis of TCOs and Oxides for Emerging Technologies II
Chairs: Andre Anders and Jose Endrino
Friday Afternoon, April 29, 2011
Room 2006 (Moscone West)
1:30 PM *G10.1/S9.1
Deposition of Transparent Conductive Oxide Films using HiPIMS. Jeff Brown and Michael McFarland; Acree Technologies Inc., Concord, California.
2:00 PM *G10.2/S9.2
P-type Transparent Conductive Oxides in the Family Ternary Co3O4-based Spinels. Andriy Zakutayev, John Perkins, Philip Parilla, David Ginley, Tula Paudel, Stephan Lany and Alex Zunger; National Renewable Energy Laboratory, Golden, Colorado.
Back To Top