Symposium E: Materials and Physics of Emerging Nonvolatile Memories

Materials and Physics of Emerging Nonvolatile Memories

JSAP logo This symposium is co-sponsored by the Japan Society of Applied Physics 

This symposium will cover the scientific and technological exploration of materials and physics of devices with nonvolatile memory properties. A broad range of topics will be covered from fundamental material properties and materials integration, to technology demonstration and industrial devices.  Contributions are expected to explore the use of either inorganic or organic materials to realize deep nanoscale memory nodes.  To this end, focus areas include:  semiconducting and metallic nanocrystal memories, SONOS, MRAM and FeRAM, chalcogenide materials, RRAM concepts, nanoelectro-mechanical systems, as well as polymer materials and more recent advances in molecular memories.  The importance of this technological field is now increasing since incumbent semiconductor nonvolatile devices such as flash memory are now facing serious future scaling problems. Recently, significant research effort has been focused worldwide on the realization of a unified memory with the characteristics of very fast random-access memories and long data-retention times.  Moreover, the blossoming of flexible electronics has put great demands on memory devices.  These trends have been confirmed by the increasing number of submitted abstracts in the field compared to previous symposia.  

Topics to be addressed include (but will not be limited to):

  • Advances in techniques for the formation of semiconducting or metallic nanocrystals in an insulator matrix
  • Advances in charge-trapping memories
  • Advances in multibit storage devices
  • Realization of CMOS-compatible memory cells using new materials
  • Ferroelectric materials and memory devices
  • Magnetoresistive memory devices
  • Multiferroic materials and devices
  • Nanoelectromechanical memory device concepts
  • Process and reliability issues related to phase-change memory devices
  • Fuse-antifuse-type systems
  • Electrically controlled resistive switching concepts
  • Cation-based memory materials and devices
  • Anion/vacancy migration-induced resistive switching concepts
  • Polymer materials and molecular systems exhibiting memory properties
  • Unified memory concepts
  • Molecular systems exhibiting memory properties
  • Reliability issues for nonvolatile memories

A joint session with Symposium F: Phase-Change Materials for Memory and Reconfigurable Electronics Applications is being considered.

A tutorial complementing this symposium is tentatively planned. Further information will be included in the MRS Program that will be available online in January.

Invited speakers include (partial list):

Katsuhisa Aratani (Sony, Japan): Electrolyte Memory; Caroline Bonafos (CNRS, France): Nanofloating Gate; Stanley Williams (Hewlett-Packard): Memristive Devices; Sorin Cristoleveanu (IMEP-MINATEC, France): Unified Memories; Narbeh Derhacobian (Adestro Technologies): CBRAM; Paul Fons (NIMS, Japan): Phase-Change Memory; Hyunsang Hwang (GIST, Korea): Oxide-based ReRAM; Yukihiro Kaneko (Panasonic, Japan): FeRAM; Kinam Kim (Samsung, Korea): Phase-Change Memory; Wei Lu (Univ. of Michigan): Amorphous Films; Richard McCreery (Univ. of Alberta, Canada): Polymetric Resistive; Syunri Oda (Tokyo Inst. of Technology, Japan): Nanocrystal Memory; Tohitsugu Sakamoto (NEC, Japan): Nanobridge Devices; Masaru Shimizu (Univ. of Hyogo, Japan): FeRAM; James Tour (Rice Univ.): SiOx-based Memory; Ilia Valov (J?lich Research Ctr., Germany): Cation-based Materials; Wei Zhiqiang (Panasonic, Japan): ReRAM.

Symposium Organizers

Yoshihisa Fujisaki
Hitachi Ltd., Central Research Laboratory
1-280 Higashikoigakubo, Kokubunji
Tokyo 185-8601, Japan
Tel 81-42-327-7851, Fax 81-42-327-7773  

Panagiotis Dimitrakis
NCSR “Demokritos,” Institute of Microelectronics,
P. O. Box 60228
153 10 Aghia Paraskevi, Greece
Tel 30-210-6503412, Fax 30-210-6511723  

Eisuke Tokumitsu
Tokyo Institute of Technology
Precision and Intelligence Laboratory
4259-R2-19 Nagatsuta, Yokohama 226-8503, Japan
Tel 81-45-924-5084, Fax 81-45-924-5977 

Michael N. Kozicki
Arizona State University
School of Electrical, Computer, and Energy Engineering
Tempe, AZ 85287-5706
Tel 480-965-2572, Fax 480-965-8118 


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