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  • 2012 MRS Spring Meeting & Exhibit
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      • Symposium A: Amorphous and Polycrystalline Thin-Film Silicon Science and Technology
      • Symposium B: Heterogeneous Integration Challenges of MEMS, Sensor and CMOS LSI
      • Symposium C: Interconnect Challenges for CMOS Technology -- Materials, Processes, and Reliability for Downscaling, Packaging, and 3D Stacking
      • Symposium D: Nanocontacts -- Emerging Materials and Processing for Ohmicity and Rectification
      • Symposium E: Materials and Physics of Emerging Non-Volatile Memories
      • Symposium F: Phase-Change Materials for Memory and Reconfigurable Electronics Applications
      • Symposium G: Reliability and Materials Issues of III-V and II-VI Semiconductor Optical and Electron Devices and Materials II
      • Symposium H: Silicon Carbide -- Materials, Processing, and Devices
      • Symposium I: Recent Advances in Superconductors, Novel Compounds, and High-Tc Materials
      • Symposium J: Organic and Hybrid Organic Electronics
      • Symposium K: Advanced Materials and Processes for “Systems-on-Plastic”
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      • Symposium Y: Actinides–Basic Science, Applications, and Technology
      • Symposium Z: Conjugated Organic Materials for Energy Conversion, Energy Storage, and Charge Transport
      • Symposium AA: Inorganic Nanowires and Nanotubes–Synthesis, Properties, and Device Applications
      • Symposium BB: Solution Synthesis of Inorganic Films and Nanostructured Materials
      • Symposium CC: Hierarchically Self-assembled Materials–From Molecule to Nano and Beyond
      • Symposium DD: De Novo Carbon Nanomaterials
      • Symposium EE: New Functional Nanocarbon Devices
      • Symposium FF: Nanodiamond Particles and Related Materials–From Basic Science to Applications
      • Symposium GG: Functional Inorganic Nanoparticle-Polymer Composites with Engineered Structures and Coupled Properties
      • Symposium HH: Nanocomposites, Nanostructures, and Heterostructures of Correlated Oxide Systems
      • Symposium II: Nanoscale Materials Modification by Photon, Ion, and Electron Beams
      • Symposium JJ: Nanoscale Thermoelectrics–Materials and Transport Phenomena
      • Symposium KK: Plasmonic Materials and Metamaterials
      • Symposium LL: New Trends and Developments in Nanomagnetism
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      • Symposium NN: DNA Nanotechnology
      • Symposium OO: Structure-Function Design Strategies for Bio-enabled Materials Systems
      • Symposium PP: Manipulating Cellular Microenvironments
      • Symposium QQ: Mechanobiology of Cells and Materials
      • Symposium RR: Molecules to Materials–Multiscale Interfacial Phenomena in Biological and Bio-inspired Materials
      • Symposium SS: Structure/Property Relationships in Biological and Biomimetic Materials at the Micro-, Nano-, and Atomic-Length Scales
      • Symposium TT: Interfaces in Materials, Biology, and Physiology
      • Symposium UU: Integration of Natural and Synthetic Biomaterials with Organic Electronics
      • Symposium VV: Nanomedicine for Molecular Imaging and Therapy
      • Symposium WW: Plasma Processing and Diagnostics for Life Sciences
      • Symposium XX: Computational Materials Design in Heterogeneous Systems
      • Symposium YY: Rare-Earth-based Materials
      • Symposium ZZ: Transforming Education in Materials Science and Engineering
      • Symposium AAA: Synthesis, Fabrication, and Assembly of Functional Particles and Capsules
      • Symposium BBB: Functional Materials and Ionic Liquids
      • Symposium CCC: Local Probing Techniques and In-Situ Measurements in Materials Science
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Symposium EE: New Functional Nanocarbon Devices

• 2012 MRS Spring Meeting & Exhibit

• April 9 - April 13, 2012
• Moscone West Convention Center | Marriott Marquis - San Francisco, California-
• Meeting Chairs: Lara A. Estroff, Jun Liu, Kornelius Nielsch, Kazumi Wada

New Functional Nanocarbon Devices

This symposium is co-sponsored by the Japan Society of Applied Physics  

Nanocarbon materials, especially graphene and carbon nanotubes, are attractive materials for future nano-electronic and nano-optic applications, because they allow achieving a new degree of functionality while at the same time delivering ultrahigh performance specs—a combination unachievable by con-ventional semiconductor materials.  In the past few years, dramatic and rapid progress has been made in the nanocarbon field.  Examples include: 1) ultrahigh-performance transistors with high-transconductance and/or high-frequency characteristics, 2) THz emission devices for radiation sources, 3) sensor applications for biomolecules and gases with single-molecule detection levels, 4) field-emission devices for x-ray sources and FED applications, 5) indium-free transparent electrodes, 6) printable electronics applications for e-paper, 7) via and wiring technology for future ICs, and 8) Nanomechanical application—to just name a few.  With our current understanding grow-ing, a new era of nanocarbon devices is now within reach.  This symposium will focus on novel nanocarbon devices and applications that harvest their intrinsic potential to the largest degree.  It will also cover science and technology aspects that support the rapid progress of novel nanocarbon devices and applications.

Session topics will include:

• Novel transistors
• High-frequency devices
• THz-emission devices
• Field-emission devices for x-ray source, FED, etc.
• Sensor devices for biomolecules and gases
• Printable electronics applications
• Quantum devices and spin devices
• New quantum-Hall-effect devices
• New functional devices
• Indium-free transparent electrode applications
• Via and wiring application
• Large-scale production
• Nanomechanical device application

A joint session with Symposium DD: De Novo Carbon Nanomaterials is being considered.

A tutorial complementing this symposium is tentatively planned. Further information will be included in the MRS Program that will be available online in January.

Invited speakers include:

Phaedon Avouris (IBM T. J. Watson Research Ctr.): Graphene-based Fast Electronics and Optoelectronics; Zhihong Chen (IBM T. J. Watson Research Ctr./Purdue Univ.): Carbon-based High-Performance Nanodevices; Andrea Ferrari (Univ. of Cambridge, United Kingdom): Graphene Photonic Devices; Pertti Hakonen (Aalto Univ. Finland): Superconductivity in Nanocarbons; Byung Hee Hong (Sungkyunkwan Univ., Korea): Synthesis and Applications of Graphene for Flexible Electronics; Philip Kim (Colombia Univ.): Electron Transport in Graphene and Boron-Nitride Heterojunction Devices; Young-Hee Lee (SKKU Univ., Korea): CNTs vs Graphene in Electronics; Yu-Min Lin (IBM T. J. Watson Research Ctr.): High-frequency Graphene Devices and Integrated Circuits for RF Applications; Takashi Mizutani (Nagoya Univ., Japan): Fabrication of Thin-Film Transistors Using ECVD-Grown Carbon Nano-tubes and Their Application to Integrated Circuits; Albert Nasibulin (Aalto Univ. Finland): Multifunctional Free-standing SWCNT Films; Taiichi Otsuji (Tohoku Univ., Japan): Terahertz Light Amplification by Stimulated Emission of Radiation in Optically Pumped Graphene; John Rogers (Univ. of Illinois, Urbana-Champaign): Aligned Arrays of Semiconducting Single-Walled Carbon Nanotubes for RF Electronics; Shintaro Sato (Fujitsu Labs, Japan): CVD Synthesis of Graphene with Controlled Grain Sizes and Its Application to Transistors; Taishi Takenobu (Waseda Univ., Japan): Ink-jet Printed Carbon-Nanotube Transistors; Chongwu Zhou (Univ. of Southern California): Controlled Synthesis and Macroscale Assembly of Carbon Nanotubes for Nano-electronics and Macroelectronics.

Symposium Organizers

Kazuhiko Matsumoto
Osaka University
Institute of Scientific and Industrial Research
8-1 Mihogaoka
Ibaraki, Osaka 567-0047, Japan
Tel 81-6-6879-8410, Fax 81-6-6879-8414
k-matsumoto@sanken.osaka-u.ac.jp  

Yoshikazu Homma
Tokyo University of Science
Dept. of Physics
1-3 Kagurazaka, Shinjuku
Tokyo 162-8601, Japan
Tel 81-3-5228-8244, Fax 81-3-5261-1023
homma@rs.kagu.tus.ac.jp  

Joerg Appenzeller
Purdue University
College of Engineering
W. Lafayette, IN 47907
Tel 765-494-1076, Fax 765-496-8383
appenzeller@purdue.edu  

Esko I. Kauppinen
Aalto University
Dept. of Applied Physics
P. O. Box 15100, Puumiehenkuja 2
FIN-00076 Espoo, Finland
Tel 358-40-5098064
nanoesko@cc.hut.fi