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  • 2012 MRS Spring Meeting & Exhibit
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      • Symposium A: Amorphous and Polycrystalline Thin-Film Silicon Science and Technology
      • Symposium B: Heterogeneous Integration Challenges of MEMS, Sensor and CMOS LSI
      • Symposium C: Interconnect Challenges for CMOS Technology -- Materials, Processes, and Reliability for Downscaling, Packaging, and 3D Stacking
      • Symposium D: Nanocontacts -- Emerging Materials and Processing for Ohmicity and Rectification
      • Symposium E: Materials and Physics of Emerging Non-Volatile Memories
      • Symposium F: Phase-Change Materials for Memory and Reconfigurable Electronics Applications
      • Symposium G: Reliability and Materials Issues of III-V and II-VI Semiconductor Optical and Electron Devices and Materials II
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Symposium F: Phase-Change Materials for Memory and Reconfigurable Electronics Applications

• 2012 MRS Spring Meeting & Exhibit

• April 9 - April 13, 2012
• Moscone West Convention Center | Marriott Marquis - San Francisco, California-
• Meeting Chairs: Lara A. Estroff, Jun Liu, Kornelius Nielsch, Kazumi Wada

Phase-Change Materials for Memory and Reconfigurable Electronics Applications

Phase-change materials such as GeTe and Ge₂Sb₂Te₅ undergo dramatic changes of conductivity through a rapid phase-change between polycrystalline and amorphous states.  In most cases, these phase-change materials are chalcogenides; but other alloys, such as GaSb, also show fast switching and distinct electrical and optical property difference between the amorphous and crystalline phases.  This phenomenon has already been exploited in rewriteable DVDs, and optical disk technologies with terabyte densities are on the horizon.  With the commercial mass production of phase-change electrical memory being announced, the emphasis is quickly moving to electronic nonvolatile memory.  Recent literature results suggest that the long-held dream of an energy-efficient nonvolatile memory that switches at DRAM-like speeds is rapidly becoming a reality.  These materials are also candidates for a variety of reconfigurable applications in RF circuitry, antennae, analog circuits, and even as reconfigurable wiring harnesses.  While they have been exploited technologically, there are still many fundamental questions to be answered. 

This symposium, initiated at the 2006 MRS Spring Meeting, brings together the technological and scientific communities to identify outstanding, fundamental problems, to present technological trends and to share current scientific results and breakthroughs.  The audience includes physicists, chemists, materials scientists, device physicists, and process engineers.  The inextricable linkage between outstanding technological problems and gaps in our understanding of the underlying physics of phase-change materials make a symposium dedicated to phase-change materials a synergistic event.

Session topics will include (but will not be limited to):

• Theory of phase-change materials
• Physics and materials science of phase-change materials
• Phase-change materials for reconfigurable logic applications
• Application of phase-change materials to solid-state memory technology (PCRAM) and to optical storage
• Device integration and performance
• Processing issues in device fabrication
• Scaling issues in phase-change material applications
• Multibit (multilevel) storage
• 3D memory structures
• Integration of phase-change materials into hybrid nanostructures

A joint session with Symposium E: Materials and Physics of Emerging Nonvolatile Memories  is being considered.

A tutorial complementing this symposium is tentatively planned. Further information will be included in the MRS Program that will be available online in January.

Invited speakers include:

Ritesh Agarwal (Univ. of Pennsylvania), Marco Bernasconi (Univ. of Milano-Bicocca, Italy), Stephen Elliott (Univ. of Cambridge, United Kingdom), Muneaki Hase (Tsukuba Univ., Japan), Robert Jones (Inst. für Festkörperforschung, Germany), Young-Chang Joo (Seoul National Univ., Korea), Youn-Seon Kang (Samsung, Korea), Alexander Kolobov (National Inst. for Advanced Industrial Science and Technology, Japan), Andrea Lacaita (Univ. of Milano, Italy), Hsiang-Lan Lung (Macronix, Taiwan), Eric Pop (Univ. of Illinois, Urbana-Champaign), Simone Raoux (IBM T. J. Watson Research Ctr.), Luping Shi (Data Storage Inst., Singapore), David Wright (Univ. of Exeter, United Kingdom).

Symposium Organizers

Paul Fons
National Institute for Advanced Industrial Science and Technology
Nanodevice Innovation Center
Higashi 1-1-1
Tsukuba Central 4
Tsukuba 305-8562, Japan
Tel 81-298-61-5636, Fax 81-298-61-2939
paul-fons@aist.go.jp 

Bart J. Kooi
University of Groningen
Zernike Institute for Advanced Materials and Materials Innovation Institute M2i
Nijenborgh 4
NL-9747 AG Groningen, The Netherlands
Tel 31-50-363-4202/4896
b.j.kooi@rug.nl 

Bong-Sub Lee
Invensas Corporation
3025 Orchard Pkwy.
San Jose, CA 95134
Tel 408-321-6797
bongsub@gmail.com 

Martin Salinga
I. Physikalisches Institut IA
RWTH Aachen
Sommerfeldstr. 14
52074 Aachen, Germany
Tel 49-241-80-27178
martin.salinga@physik.rwth-aachen.de 

Rong Zhao
Data Storage Institute A*STAR
DSI Bldg.
5 Engineering Dr. 1
Singapore 117608, Singapore
Tel 65-6874-8412
zhao_rong@dsi.a-star.edu.sg