Symposium G: Reliability and Materials Issues of III-V and II-VI Semiconductor Optical and Electron Devices and Materials II

2012 MRS Spring Meeting logo

Reliability and Materials Issues of III-V and II-VI Semiconductor Optical and Electron Devices and Materials II

JSAP logo This symposium is co-sponsored by the Japan Society of Applied Physics  

Achieving high reliability is a key issue for semiconductor optical and electron devices and is as important as device performance for commercial application.  Degradation of both optical and electron devices is strongly related to the materials issues including defect issues.  A variety of material issues can occur during the device fabrication processes, i.e., crystal growth, impurity diffusion, ion implantation, wet/dry etching, metallization, bonding, packaging, etc.  This symposium will review the current status of reliability and degradation of III-V (including III-V nitrides) and II-VI semiconductor optical and electron devices, as well as their materials issues in thin film growth, wafer processing, and device fabrication processes.  A forum for discussion on development of future research approaches is planned.

Session topics will include:

  • Materials issues and defect generation in semiconductor thin-film growth: III-V and II-VI compound semiconductors, and III-V nitrides
  • Materials issues and defect generation in wafer processing and device fabrication processes
  • Recombination-enhanced defect reaction and related phenomena
  • Recombination-enhanced impurity (dopant) diffusion etc.
  • Reliability and degradation of LDs and LEDs: III-V’s, II-VI’s, and III-V nitrides
  • Reliability and degradation of VCSELs: AlGaAs/GaAs, InGaAs/GaAs, GaInNAs/GaAs, etc.
  • Reliability of nanostructured devices: quantum-dot lasers, quantum-cascade lasers, etc.
  • Reliability of GaAs-, InP-, and GaN-related transistors and circuits
  • Reliability of metal-semiconductor contacts
  • Strain contribution on the device degradation
  • Failure analyses: optical (PL/CL, OBIC, SNOM, etc.), electrical (EBIC, SPM, etc.), and structural (HREM, HAADF/STEM, 3D atom probe, etc.)

A joint session with Symposium II: Nanoscale Materials Modification by Photon, Ion, and Electron Beams  is being considered.

A tutorial is tentatively planned on materials issues and reliability of GaN-related materials and optical and electron devices. Further information will be included in the MRS Program that will be available online in January.
 

Invited speakers include:

Koshi Ando (Tottori Univ., Japan), Jesus del Alamo (Massachusetts Inst. of Technology), Leonard Brillson (Ohio State Univ.), Robert Herrick (JDSU), Nobuyuki Ikoma (Sumitomo Electric, Japan), Shinichi Kamiya (Furukawa Electric, Japan), Thomas Kuech (Univ. of Wisconsin-Madison), Mark Law and Toshikazu Nishida (Univ. of Florida), Toshihiro Ohki (Fujitsu Labs Ltd.), Aliz Simon (International Atomic Energy Agency, Austria), Tetsuya Suemitsu (Tohoku Univ., Japan), Shigetaka Tomiya (Sony, Japan), Mitsuaki Yano (Osaka Inst. of Technology, Japan), Enrico Zanoni (Univ. degli Studi di Padova, Italy).

Symposium Organizers

Osamu Ueda
Kanazawa Institute of Technology
Graduate School of Engineering
1-3-4 Atago Minato-ku
Tokyo 105-0002, Japan
Tel 81-3-5777-2227, Fax 81-3-5777-2226
oueda@neptune.kanazawa-it.ac.jp 

Mitsuo Fukuda
Toyohashi University of Technology
Dept. of Electrical and Electronic Engineering
1-1, Hibarigaoka, Tempakucho
Toyohashi, Aichi 441-8580, Japan
Tel 81-0532-44-6729, Fax 81-532-44-6729
fukuda_mitsuo@eee.tut.ac.jp 

Kenji Shiojima
University of Fukui
Graduate School of Electrical and Electronics Engineering
3-9-1 Bunkyo
Fukui 910-8507, Japan
Tel 81-776-27-8560, Fax 81-776-27-8749
shiojima@u-fukui.ac.jp 

Edwin Piner
Texas State University, San Marcos
Dept. of Physics
601 University Dr.
San Marcos, TX 78666
Tel 512-245-7049, Fax 512-245-8233
epiner@txstate.edu 

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