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  • 2012 MRS Spring Meeting & Exhibit
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      • Symposium A: Amorphous and Polycrystalline Thin-Film Silicon Science and Technology
      • Symposium B: Heterogeneous Integration Challenges of MEMS, Sensor and CMOS LSI
      • Symposium C: Interconnect Challenges for CMOS Technology -- Materials, Processes, and Reliability for Downscaling, Packaging, and 3D Stacking
      • Symposium D: Nanocontacts -- Emerging Materials and Processing for Ohmicity and Rectification
      • Symposium E: Materials and Physics of Emerging Non-Volatile Memories
      • Symposium F: Phase-Change Materials for Memory and Reconfigurable Electronics Applications
      • Symposium G: Reliability and Materials Issues of III-V and II-VI Semiconductor Optical and Electron Devices and Materials II
      • Symposium H: Silicon Carbide -- Materials, Processing, and Devices
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Symposium H: Silicon Carbide -- Materials, Processing, and Devices

• 2012 MRS Spring Meeting & Exhibit

• April 9 - April 13, 2012
• Moscone West Convention Center | Marriott Marquis - San Francisco, California-
• Meeting Chairs: Lara A. Estroff, Jun Liu, Kornelius Nielsch, Kazumi Wada

Silicon Carbide—Materials, Processing, and Devices

Advances in silicon-carbide materials, processing, and device design have recently resulted in implementation of SiC-based electronic systems and offer great promise in high-voltage, high-temperature, and high-frequency applications.  This symposium will focus on new developments in basic science of SiC materials as well as rapidly maturing device technologies.  The challenges in this field include understanding and decreasing defect densities in bulk SiC crystals, controlling morphology and residual impurities in epilayers, optimization of implant activation and oxide-SiC interfaces, and developing novel-device structures.

The symposium will bring together the crystal growers, materials engineers, modelers, physicists, and device experts needed to continue the rapid pace of silicon-carbide-based technology.

Topics of particular interest will include (but will not be limited to):

• Bulk SiC growth (including large-diameter crystals), modeling, and characterization
• Homo- and heteroepitaxial growth (doping control, morphology development, carrier lifetimes, etc.)
• Advances in ion implantation
• Improved ohmic and rectifying contacts
• Oxidation and alternative dielectric materials
• Devices (including high-voltage, high-temperature, high-frequency, sensors and system-level benefits)
• Surfaces and interfaces
• Advances in porous SiC technology
• SiC material, device, and interface characterization and theory
• Graphene growth and devices

Invited speakers include:

D. Alquier (Univ. of Tours, France), M. Dudley (SUNY, Stony Brook), C. F. Huang (National TsingHua Univ., Taiwan), B. Kallinger (Fraunhofer IISB, Germany), T. Kimoto  (Kyoto Univ., Japan), Andrea Severino (IMM-CNR, Italy), I. Sharp (Walter Schottky Inst., Germany), T. Umeda (Univ. of Tsukuba, Japan), G. Wagner (IKZ Berlin, Germany), C. Zorman (Case Western Reserve Univ.).

Symposium Organizers

Stephen E. Saddow
University of South Florida
Dept. of Electrical Engineering
4202 E. Fowler Ave.
Tampa, FL 33620
Tel 813-974-4773, Fax 813-974-5250
saddow@ieee.org 

Edward Sanchez
Dow Corning Compound Semiconductor
MS AUB 1007
(2200 W. Salzburg Rd.)
P. O. Box 994
Midland, MI 48686
Tel 989-496-6076, Fax 989-496-6360
edward.sanchez@dowcorning.com 

Feng Zhao
Washington State University 
Dept. of Electrical Engineering 
Vancouver, WA 98686 
Tel 360-546-9187, Fax 360-546-9438 
feng.zhao@wsu.edu

Hidekazu Tsuchida
Central Research Institute of Electric Power Industry (CRIEPI)
2-6-1 Nagasaka, Yokosuka
Kanagawa 240-0196, Japan
Tel 81-468-56-2121, Fax 81-468-56-5571
tsuchida@criepi.denken.or.jp 

Roland Rupp
Infineon Technologies AG
Dep. IMM TI P SIC
Am Campeon 1-12
85579 Neubiberg, Germany
Tel 49-89-234-59009, Fax 49-89-234-9555607
roland.rupp@infineon.com