Tutorial Sessions

2012 MRS Spring Meeting logo

The 2012 MRS Spring Meeting will feature 16 tutorials covering a variety of topics to complement the scientific sessions. The tutorials will be free of charge to all meeting attendees. Tutorial notes will be available for a small fee during preregistration and at the Publications Desk during the meeting.

2012 Spring Meeting Tutorials

  • Tutorial A: Thin-Film Silicon and Related Materials for Solar Cells and Displays
  • Tutorial E: Fundamentals of Emerging Nonvolatile Memories
  • Tutorial F: Overview of Phase-Change Materials, Their Physics and Applications
  • Tutorial G:  Materials Issues and Reliability of GaN-Related Optical and Electron Devices and Materials
  • Tutorial I: Coated Conductors―20-Year History, Status, and Prospects
  • Tutorial L: Silicon Photonics and Sensing Technology
  • Tutorial N: Fundamentals and Applications of Piezotronic Effect for Energy Conversion and Semiconductor Device Development
  • Tutorial O: Li-ion Batteries to Supercapacitors to Metal-Air Batteries―Energy Storage Systems to Satisfy High-Energy and High-Power Applications
  • Tutorial W: Design and Processing of Organic, Polymer, and Dye Solar Cells―From Nanostructure Control of the Cell Architecture to Large-Area Module Upscaling
  • Tutorial EE: Physics and Devices of Nanocarbon Materials
  • Tutorial HH: Oxide Heterostructures and Nanostructures:
    Fabrication, Properties, Magnetic Coupling, and Applications
  • Tutorial II: Introduction to Nanoscale Materials Modification by Photon, Ion, and Electron Beams
  • Tutorial MM: Topological Insulators―Theory and Experiment
  • Tutorial QQ: Interactive Tutorial on Techniques in Mechanobiology
  • Tutorial SS: A Laboratory X-Ray Characterization Primer on Techniques to Characterize Biological Materials and the Micron-, Nanometer- and Angstrom-Length Scales―From Tomography to Diffraction Mapping
  • Tutorial WW: Plasmas for Life Sciences―Foundations and Applications
     

 Tutorial A: Thin-Film Silicon and Related Materials for Solar Cells and Display 

Monday, April 9, 2012
9:00 am-5:00 pm
Moscone West, Level 2, Room 2003

Instructors:
Eric A. Schiff
Syracuse University

Qi Wang
National Renewable Energy Laboratory

Silicon and related thin films are applied widely in solar cells and backplane electronics of liquid-crystal displays. The tutorial introduces the preparation methods, materials properties, and device engineering. While the emphasis will be on silicon-related thin films, the fundamentals apply to other thin-film materials as well. Several important chemical vapor deposition (CVD) techniques, including RF and VHF plasma-enhanced (PE), and hot-wire (HW) or Cat CVD, will surveyed. The techniques produce useful films ranging in structure from amorphous to nanocrystalline, to polycrystalline, with highly variable chemical compositions including germanium alloys, carbides, nitrides, and oxides. The instructors will survey the optical, electronic, and dielectric properties of the films, and the applications of these properties in devices, including thin-film transistors for display, thin-film solar cells, and heterojunction solar cells based on conventional crystalline silicon. Multijunction and light-trapping architectures for solar cells will be introduced, including speculative architectures based on nanostructures and plasmonics.   

 Tutorial E: Fundamentals of Emerging Nonvolatile Memories  

Monday, April 9
9:00 am-5:00 pm
Moscone West, Level 2, Room 2005

Instructors
Daniele Ielmini
Politecnico di Milano, Italy

Sung-Jin Whang
Hynix Semiconductor Inc., Korea

Dominique Vuillaume
Institute of Electronics, Microelectronics and Nanotechnology (IEMN), France

Due to the technological limitation of flash memory, a significant number of new nonvolatile memories are now being proposed. This tutorial will cover the fundamental physics behind these emerging nonvolatile memories. Among the various candidates of the post-flash memories, several important technologies will be explored. The technological details of RRAM and CBRAM, molecular memories, and advanced flash and 3D memories will be introduced. Because the tutorial covers various types of devices with a variety of materials, leading researchers in each technological field will present their talks, starting from the fundamental background of each device and summarizing by prospecting each technology. Each segment will include the principles and the physics behind the technologies. 

Tutorial F: Overview of Phase-Change Materials, Their Physics and Applications  

Monday, April 9
9:00 am-5:00 pm
Moscone West, Level 2, Room 2004

Instructors
Martin Salinga
RWTH Aachen, Germany

Jaakko Akola
Tampere University of Technology, Finland

Sergey A. Kostylev
Onyx International Consulting, LLC

 

Matthew BrightSky
IBM

Phase-change materials, with their unique material properties, are important for many applications including phase-change memory, recently on the product stage, which is rapidly developing. This four-part tutorial will cover various timely and interesting topics related to such developments. It is geared for both beginners and advanced scientists from the academic and industrial communities. The tutorial develops the interplay among material properties, modeling/physics, and devices, maintaining the balance between scientific and technological concerns.  The first segment will provide an introductory review of phase-change materials, including the history, unique material properties, atomic bonding and structures, crystallization kinetics, etc. Experimental studies on phase-change materials will be described to enhance the understanding of the participants. The second segment gives an overview of the extensive quantum mechanical calculations that have been carried out on phase-change materials, and will offer insight into important theoretical concepts crucial for understanding the properties of phase-change materials. The third segment will introduce current and future applications of phase-change materials, with a primary focus on phase-change memory, including device physics, operation principles, and underlying physical mechanisms. Special emphasis will be placed on the relation between material properties and device performance. The tutorial concludes with a state-of-the-art technology review on memory devices, including design, fabrication, performances, and applications.
 

Tutorial G:Materials Issues and Reliability of GaN-Related Optical and Electron Devices and Materials  

Monday, April 9
9:00 am-5:00 pm
Moscone West, Level 2, Room 2007

Instructors
Atsushi A. Yamaguchi
Kanazawa Institute of Technology (KIT), Japan

Shigetaka Tomiya
Sony Corporation, Japan 

Nariaki Ikeda
Advanced Power Device Research Association, Japan

Tomás Palacios
Massachusetts Institute of Technology

The first segment of the tutorial describes material issues of III-nitride optical devices from the viewpoint of optical characterizations. III-nitride materials have been intensively studied for the last two or three decades, and high-brightness blue and white LEDs and blue-violet laser diodes are now in practical use. However, high-performance optical devices have been realized within limited wavelength region compared with their potential bandgap coverage. Enhancement of emission efficiency and/or optical gain in active InGaN (or AlGaN) quantum well (QW) layers is critical for extending the wavelength region, and the understanding of carrier recombination processes and optical polarization properties is a key issue for this challenge. In addition, realization of high-quality (perfectly unstrained) GaN substrates will also be important. The tutorial focuses on the current status of research for the following three issues: carrier recombination processes in InGaN QWs; optical polarization properties in InGaN and AlGaN QWs; and residual strain in GaN substrates. The possibilities to control these properties are also touched.  

The second segment discusses material issues of III-nitride optical devices from the viewpoint of structural defects and their characterizations, and also covers degradation issues of III-nitride laser diodes (LDs). Considerable efforts have been expended on the development of III-nitride LDs for a couple of decades. As a result, blue-violet LDs have already been realized and are now mass-market products. Unlike conventional zinc-blende-based III-V materials, a variety of structural defects occur in wurtzite-based III-nitride materials. To develop high-performance and highly reliable devices, it is important to understand the nature of the structural defects. The tutorial first focuses on structural defects which appear in the LD epitaxial layers, then reviews the current status of degradation mechanisms of III-nitride LDs.    

The third segment provides materials issues of III-nitride power devices from the viewpoint of high-power characteristics. The GaN-based field-effect transistor (FET) can be operated under high-power, high-frequency, and high-temperature conditions, resulting in realizing the lower-loss and higher-power switching characteristics. Using an AlGaN/GaN HFET structure, a two-dimensional electron gas (2DEG) with a high mobility and a high density of carriers is generated at the hetero-interface. Conventional HFET devices usually operate normally on mode. However, a normally off-operation transistor is necessary in the case of application for a switching device, due to the fail-safe mode issue. In recent years, several researchers, as well as our group, have demonstrated a novel “hybrid MOS-HFET” with several advantages over the conventional GaN-based RESURF-MOSFET structure. In the tutorial, high-power characteristics for GaN-HFET devices, as well as GaN-hybrid MOS-HFET devices, will be described in detail. Moreover, the latest development for GaN power devices for switching application will be introduced.  

The concluding segment of the tutorial focuses on the opportunities of GaN-based transistors for power amplifiers at mm and sub-mm wave frequencies. The union of high mobility and charge density in the two-dimensional electron gas of AlGaN/GaN heterostructures, in combination with the very high electric field of this semiconductor family, makes GaN-based devices the best option for power amplification at almost any frequency. The technology necessary for the fabrication of 300 GHz transistors will be described, as well as the roadmap to approach the performance of these devices to THz frequencies. In conclusion, the new opportunities enabled by the seamless heterogeneous integration of GaN and Si devices will also be discussed. 

Tutorial I: Coated Conductors―20-Year History, Status, and Prospects  

Monday, April 9
9:00 am-5:00 pm
Moscone West, Level 2, Room 2009

Instructors
Takanobu Kiss
Kyushu University, Japan

RE-123 coated conductors, so-called second-generation HTS wires, have dramatically developed in the past two decades. Now, 2G wires have already been applied to wide-spread prototypes as rotating machines, high-field magnets, power cables, fault current limiters, etc. They have the advantage of excellent flux-pinning properties, robust mechanical strength, and the possibility for low AC loss, high-normal resistivity, and also quite low manufacturing cost. The advantages are derived from the peculiar structure of tape-shaped conductors as sharply textured, single-crystal-like Y-123 films grown on flexible metal substrate, in order to avoid quite severe intergranular weak links for Y-123. In 1991, this kind of structure was pioneered by using in-plane textured template films grown by ion-beam-assisted deposition (IBAD), on nontextured Ni-Cr alloy tapes. Though many kinds of alternative techniques have since been proposed, IBAD-processed coated conductors still have the high-performance record of Ic x L over 450kAm. The tutorial will interpret the two decades of coated conductor history and bring together the latest information for high-performance, uniform, and cost-effective mass production of coated conductors using IBAD technique.      

Tutorial L: Silicon Photonics and Sensing Technology 

Monday, April 9
1:30 pm – 5:00 pm
Moscone West, Level 2, Room 2012

Instructors:Philippe M. Fauchet
University of Rochester 

B. Gunnar Malm
KTH Royal Institute of Technology, Sweden
The recent development of silicon photonics is expected to provide a strong connection between the real world and the digital world. The tutorial begins with a general overview of silicon photonics, which aims for photonics to be a part of CMOS technology, thereby enabling the realization of powerful tools for sensing and imaging. Nanometer-size Si objects can be engineered for a wide variety of applications, including optoelectronics, photovoltaics, electronics, and photonics. The use of various types of nanoscale Si objects, including crystallized Si-SiO2 superlattices and porous silicon for the above-mentioned applications will be examined. The tutorial also includes applications for biomedical and chemical sensors that can be used by consumers worldwide. The next segment gives a different view of the same topics; its main focus is on the signal-to-noise ratio in sensing and imaging. A discussion about the difference between the requirements for IR and THz will be useful for the audience, especially for those who are interested in the development of the real products. Examples will include integration of low-noise and low-dark-current SiGe-based IR and THz detectors in the CMOS flow, possibly using micromechanics. The interaction between detector and the silicon CMOS readout circuit in, e.g., a pixel array, will be discussed. In conclusion, the influence of process technology, sensor materials, and fundamental limitations will be reviewed.

Schedule:
1:30 – 2:30 pm Fauchet
2:30 – 3:00 pm Coffee Break
3:00 – 4:00 pm Fauchet
4:00 – 5:00 pm Malm
 

Tutorial N: Fundamentals and Applications of Piezotronic Effect for Energy Conversion and Semiconductor Device Development  

Monday, April 9
1:30-5:00 pm
Moscone West, Level 2, Room 2010

Instructors
Xudong Wang
University of Wisconsin-Madison

Sang-Woo Kim
Sungkyunkwan University, South Korea

Piezotronic effect describes a coupling between piezoelectric potential and semiconductor properties and functionalities. It offers a new strategy of applying strain, force, or pressure to regulate semiconductor-related properties, including charge transport, electronic band structure, photonic excitation, and charge recombination. For example, ZnO nanogenerator directly outputs DC signal by integrating a semiconductor-metal Schottky junction with piezoelectric nanowires. Electroluminescence can be enhanced by the piezopotential-induced interface band structure change. The piezopotential can also be integrated with photovoltaic or photoelectrochemical systems to improve the power output or energy conversion efficiency. The tutorial will view the fundamentals of the interactions between piezopotential and semiconductor band structure and transport properties. Operation principles and advanced applications of the piezotronic effect will be introduced in detail, covering mechanical and/or solar energy harvesting devices, transistors, diodes, and optoelectronic devices. Discussion will also be provided on potential challenges and future research opportunities.
 

Tutorial O: Li-ion Batteries to Supercapacitors to Metal-Air Batteries―Energy Storage Systems to Satisfy High-Energy and High-Power Applications  

Monday, April 9
8:30 am-12:00 noon
Moscone West, Level 2, Room 2024

Instructor
Deyang Qu
University of Massachusetts Boston

Electrochemical and Material Chemistry for Energy Storage
This segment will cover the fundamental electrochemistry regarding the electrode-electrolyte interface and the aspects of electrode materials, as well as the current status and challenges of the energy storage systems, including the latest development of Li-ion batteries. In addition, the history of battery evolution (including fuel-cell and solar-cell) and battery applications will be introduced.

Battery with Air Electrode―The High-Energy Solution
In light of the previous session, the concept of air-diffusion-electrode will be introduced, together with the selection of catalysts. The materials aspects for Zn-air, Mg-air, Al-air, Li-air, and fuel cells (PEM and alkaline) will be discussed.

Supercapacitor―The High-Power Solution
The concepts of supercapacitor will be discussed, focusing on the materials science and cell engineering. Double-layer, metal-oxide, H- and Li-asymmetric supercapacitors will be introduced.
 

Tutorial W: Design and Processing of Organic, Polymer, and Dye Solar Cells―From Nanostructure Control of the Cell Architecture to Large-Area Module Upscaling  

Monday, April 9
9:00 am-4:15 pm
Moscone West, Level 2, Room 2002

Instructors
Thomas M. Brown
University of Rome, Tor Vergata, Italy

Barry P. Rand
IMEC, Belgium

Harald Hoppe
Ilmenau University of Technology, Germany

The tutorial, divided into three parts covering polymer, dye-sensitized, and small molecule organic devices, examines organic and hybrid photovoltaic technologies aiming for low-cost solar power conversion that are currently being developed worldwide. In these devices, the nanostructure of the active layers plays a crucial role in controlling device performance. The tutorial will begin with the background, operating principles, current state of the art, characterization, structure-property relations, and how material formulation and processing parameters influence the morphology of the active layers on the nanoscale and, ultimately, the power-conversion efficiencies and stability of the photovoltaic cells.

Since these technologies are primed for migration from laboratory scale to large-area devices, the challenges for upscaling are manifold. The tutorial will put these forward and examine the various different architectures available for module fabrication, considering modeling avenues for efficient large-area design. The tutorial concludes with large-area deposition (e.g., coating) and processing (e.g., via laser) techniques, both for glass-based rigid devices and roll-to-roll flexible manufacturing.

The intention of the tutorial is to give the attendee a fundamental background on each technology, from the control of the materials nanostructure to the large-area design and fabrication, outlining the advantages, challenges, and future trends. 

Tutorial EE: Physics and Devices of Nanocarbon Materials  

Monday, April 9
Time 9:00 am-12:00 noon
Moscone West, Level 2, Room 2006

Instructors
Yutaka Ohno
Nagoya University, Japan

Joerg Appenzeller
Purdue University 

The tutorial will cover the fundamentals and device applications of nanocarbon materials, i.e., graphene and carbon nanotube.  

Graphene
In order to understand the potential of graphene devices for electronics applications, it is mandatory to gain a detailed understanding of the unique properties of graphene as compared to other classes of materials. In particular, it is critical to study how performance-limiting aspects such as mobility, the number of modes in the system and the contacts―to name just a few―impact the overall device performance. Where do the material properties of graphene provide us with an edge? Where do we have to deal with disadvantages? Linking materials properties as the density of states (DOS) with the performance specs of devices is key in this context. The tutorial will explain, in detail, our current understanding of this above-mentioned link with a particular focus on the unique properties of graphene. Simple functional dependences will be used to elucidate the important aspects of transport in graphene in this context.  

Carbon Nanotube
The marvelous potential of carbon nanotubes for semiconductor applications has been understood since the first demonstration of carbon nanotube FETs more than 10 years ago. We have to gain technologies to precisely control the device properties, enhance operation speed, and integrate devices in large scale for practical use in nanoscale electronics. In the tutorial, the current status and understandings of these issues are overviewed. The interfaces of the contacts and the gate insulator that are key parts to controlling the device property are discussed intensively. Another promising application of carbon nanotubes is microscale thin-film transistors for flexible electronics and printable electronics on plastic film. The techniques to enhance the mobility, improve the uniformity for integration, realize a low-voltage operation in printed devices, and enhance the fabrication throughput are discussed. The advantages of carbon nanotubes in performance and fabrication cost are clarified, among the other competitors such as organic and oxide materials. 

Tutorial HH: Oxide Heterostructures and Nanostructures―Fabrication, Properties, Magnetic Coupling, and Applications  

Monday, April 9
8:30 am-5:00 pm
Moscone West, Level 2, Room 2011

Instructors
Hidekazu Tanaka
Osaka University, Japan

Hanns-Ulrich Habermeier
Max-Planck-Institute for Solid State Research, Germany

Manfred Fiebig
ETH Zurich, Switzerland

Guus Rijnders
University of Twente, The Netherlands

The tutorial will comprehensively cover current oxide-nanostructure topics from the fabrication techniques (atomically controlled layer-by-layer growth of the heterostructures and the low-dimensional nanostructures, such as nanowires and nanodots) to the novel physics emerging from such nanostructures and its application to the electronics. The strong correlated nature of electron in oxides and its ionic character of the crystal show a variety of interesting properties different from metals and semiconductors, particularly at the interfaces of heterostructures. Furthermore, oxide nanowires and nanodots will control the phase segregation and its percolation effect with the order of nanometer scale drastically.

Fabrication of Multidimensional Oxide Nanostructures and its Physical Properties
Hidekazu Tanaka focuses on the novel fabrication techniques of the low-dimensional oxide nanostructures and properties.  

Complex Oxide Interfaces–A Path to Design New Materials
Hanns-Ulrich Habermeier explores the emerging new physics at the heterostructures.   

Magnetoelectric Correlations in Structured Oxides
Manfred Fiebig reviews different approaches for enhancing the magnetoelectric performance of oxides by the introduction of interfaces.  

Atomic-Scale Engineering of Epitaxial Oxide Heterostructures
Guus Rijnders discusses state-of-the-art techniques for the atomic (or unit cell) layer-by-layer growth of complex oxides.

Tutorial II: Introduction to Nanoscale Materials Modification by Photon, Ion, and Electron Beams  

Monday, April 9
1:30-5:00 pm
Moscone West, Level 2, Room 2022

Instructors
Katsumi Tanimura
Osaka University, Japan

Alexander Shluger
University College London, United Kingdom

The tutorial will cover the main aspects of materials modification using various quantum-beam excitations. It will start with a brief research history, typical phenomena, and fundamental mechanisms, and end with future prospects.    

Alexander Shluger will give an introduction into the mechanisms of materials modification by electronic excitation, and will describe theoretical methods and models used for studying the manipulation of atoms and molecules inside solids, at surfaces, and in nanodevices, using different excitation sources.  

Katsumi Tanimura will begin with an overview of several processes of excitation-induced structural modification in solids and at their surfaces, and then will describe specific features of typical well-documented phenomena. He will also review recent progress in experimental methodology to obtain direct information on ultrafast electronic and structural processes. 

Tutorial MM: Topological Insulators―Theory and Experiment  

Monday, April 9
1:30-5:00 pm
Moscone West, Level 2, Room 2000

Instructors
Shoucheng Zhang
Stanford University

Jürg Osterwalder
Universität Zürich, Switzerland

Hartmut Buhmann
University Würzburg, Germany  

Topological insulators is a very new, rapidly increasing field in solid-state physics, offering a lot of new concepts which inspire both theoretical and experimental research. The tutorial introduces fundamental concepts in this field, discusses experimental realizations, and gives an overview of current developments. The first segment reviews the theoretical concepts of topological insulators (TI) and discusses actual and prospective developments. The instructor, Shoucheng Zhang, winner of the Europhysics Award 2010, was one of the first scientists to introduce the concept of topological insulators. An overview of the currently most successful experiment techniques for characterizing topological insulators and important results will be given. This segment will be presented by Jürg Osterwalder and Hartmut Buhmann. Osterwalder is an expert on spin-resolved photoelectron spectroscopy, one of the most successful tools in identifying TI materials, and was involved in many key experiments. Buhmann, also a Europhysics Award 2010 winner, and his group were the first to demonstrate the existence of TI using transport measurement techniques. Transport experiments are, so far, the only techniques giving direct access to the unique properties of TI states.

Tutorial QQ: Interactive Tutorial on Techniques in Mechanobiology  

Monday, April 9
9:00 am-5:00 pm
Moscone West, Level 2, Room 2020

Instructors:
Nicholas Geisse
Asylum Research

Kristopher Kubow
University of Virginia

Xavier Banquy
University of California at Santa Barbara  

The tutorial will focus on the main tools used in mechanobiology research in academic and industrial laboratories. Each instructor, an expert in his field, will present a one-hour tutorial that begins with a general introduction to the technique used. The talk will be followed by in-depth and interactive discussions. Each session will include background information, detailed experimental and modeling aspects of the method, the current state-of-the-art, and applications of the method in real-world problems. Future directions for the methods will be discussed, in particular how to overcome the natural difficulties encountered when characterizing living material. The intention of the tutorial is to give the attendees a fundamental background on each method, the strengths and limitations of each technique, and how these techniques might be applied to their own areas of research in mechanobiology.

Tutorial SS: A Laboratory X-Ray Characterization Primer on Techniques to Characterize Biological Materials and the Micron-, Nanometer-, and Angstrom-Length Scales―From Tomography to Diffraction Mapping  

Monday, April 9
1:30-5:00 pm
Moscone West, Level 2, Room 2018

Instructors 

Philip L. Salmon
SkyScan 

Peter Laggner
Bruker AXS Inc.

X-ray imaging by tomography, diffraction, and related techniques is well established in materials science, but the use and application for studying biological and bio-inspired materials remains a huge challenge. Artifacts, sample stabilization, and resolution limitations strongly degrade measurement results, and an understanding of the analysis and interpretation limits is essential. Much of the cutting-edge work done with these and related techniques is carried out in high-brilliance synchrotron x-ray facilities; however, the industry has done much to provide matching laboratory-based instruments that have significant advantages of availability and versatility.

The tutorial aims to provide a primer for researchers who are not familiar with the detailed principles, pitfalls, and applications of lab-based x-ray imaging by absorption or diffraction interactions. The hope is that scientists that are often acquainted with other imaging techniques for their samples will learn and understand the principles and exciting potential application of bulk imaging of micro- and nanostructures of biological and bio-inspired samples.

The tutorial topics include basic principles, example applications, common problems, tips, tricks, and solutions. The tutorial will have a strong practical aspect of "how good measurements can be performed with my samples."

Our speakers are top scientists from well-known international laboratory equipment manufacturers (Skyscan and Bruker). Thus, the tutorial will also cover recent developments and future trends of available instrumentation and analysis techniques. During the tutorial, participants will receive detailed explanations of the fundamentals of each method while highlighting application potential. The tutorial will give attendees a true learning experience focused on the methods, which will perfectly augment the scientific talks and interdisciplinary forum of Symposium SS.

Tutorial WW: Plasmas for Life Sciences―Foundations and Applications  

Monday, April 9
1:30-5:00 pm
Moscone West, Level 2, Room 2016

Instructors
Alexander Fridman
Drexel University  

Pietro Favia
University of Bari, Italy  

Hajime Sakakita
National Institute of Advanced Industrial Science and Technology (AIST), Japan 

The tutorial will characterize plasma life sciences that have emerged from the plasma science and technology field. In this field, plasma can interact with organisms to produce various functions and new phenomena with potential applications for the inactivation of bacteria, wound disinfection and healing, fighting some types of cancers, and activation of cell functions and proliferation. Additionally, plasmas at low and atmospheric pressure enable surface modification and fabrication of organic and inorganic materials to create advanced biomaterials, drug-delivery systems, scaffolds and nanoparticles for tissue engineering, biomedical devices, etc. The tutorial will begin with a general overview of plasma source, plasma processing, and diagnostics for plasma medicine, biomedical material and devices, agriculture, etc. The tutorial will present attendees with a fundamental background in plasma life sciences, the strengths of principles in surprising phenomena induced by plasma, the approach to fundamental research, and information on transferring those results to industry, medical applications, and future directions.

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