Program - Symposium V: Epitaxial Growth-Principles and Applications

 

April 5 - 8, 1999



Chairs

 

  • Albert-Laszlo Barabasi Univ of Notre Dame
  • Mohan Krishnamurthy Michigan Technological Univ
  • Feng Liu Univ of Wisconsin-Madison
  • George Maracas Motorola Phoenix Corp Research Labs
  • Tom Pearsall Univ of Washington

Symposium Support

  • AIXTRON AG
  • Bede Scientific Instruments, Ltd.
  • Burleigh Instruments, Inc.
  • Centre Europeen de Recherche de Fontainebleau
  • EMCORE Corporation
  • Epichem Inc.
  • EPIGRESS AB
  • k-Space Associates, Inc.
  • SiGe Microsystems Inc.
  • SVT Associates, Inc.
  • VG Semicon

SESSION V1: SUBMONOLAYER AND MULTILAYER GROWTH

 Chair: Fereydoon Family
Monday Morning, April 5, 1999
Golden Gate B3 (M) 8:30 AM *V1.1
FLUCTUATION MECHANISMS DURING SUBMONOLAYER EPITAXY. Mark F. Gyure and Christian Ratsch, HRL Laboratories, Malibu, CA; Russel E. Caflisch, Barry Merriman, Susan Chen, Myungjoo Kang and Stanley J. Osher, Department of Mathematics, UCLA, CA; Dimitri D. Vvedensky, The Blackett Laboratory, Imperial College, London, UNITED KINGDOM.

9:00 AM V1.2
SELF-CONSISTENT RATE-EQUATION APPROACH TO NUCLEATION AND GROWTH IN POINT/EXTENDED ISLAND MODELS OF 1-D HOMOEPITAXY. Mihail N. Popescu , Emory Univ., Dept. of Physics, Atlanta, GA; Jacques G. Amar, Univ. of Toledo, Dept. of Physics and Astronomy, Toledo, OH; Fereydoon Family, Emory Univ., Dept. of Physics, Atlanta, GA.

9:15 AM V1.3
MOLECULAR DYNAMICS STUDIES OF INTERLAYER MASS TRANSPORT AND DENDRITIC-TO-COMPACT MORPHOLOGICAL TRANSITIONS DURING SUBMONOLAYER GROWTH ON PT(111) SURFACES. Valeriu Chirita , Peter Munger, Lars Hultman, Thin Films Physics Division, Linkoping University, Linkoping, SWEDEN; Joseph E. Greene, Materials Science Department, University of Illinois, Urbana, IL.

9:30 AM V1.4
INTERMEDIATE SCALING REGIME FOR MULTILAYER EPITAXIAL GROWTH. Richard S. Ross and Mark F. Gyure, HRL Laboratories, Malibu, CA.

9:45 AM V1.5
DIMER SHEARING AND DIFFUSION IN METAL(100) EPITAXIAL GROWTH. K. Wang , F. Family, Department of Physics, Emory University, Atlanta, GA; J. Amar, Department of Physics & Astronomy, University of Toledo, Toledo, OH.

10:00 AM BREAK

10:30 AM *V1.6
MECHANISMS OF MOUND COARSENING IN UNSTABLE EPITAXIAL GROWTH. Jacques G. Amar , Department of Physics and Astronomy, University of Toledo, Toledo, OH.

11:00 AM *V1.7
SELF-ORGANIZATION OF SURFACE PATTERNS DURING CLUSTERING. Martin Zinke-Allmang , Univ of Western Ontario, Dept of Physics and Astronomy, London, Ontario, CANADA; Sywert Brongersma, IMEC, Leuven, BELGIUM; Graham Carlow, JDS Fitel, Nepean, Ontario, CANADA.

11:30 AM V1.8
THE ROLE OF THE LATTICE STEP IN EPITAXIAL GROWTH. Tsu-Yi Fu , Tien T. Tsong, Institute of Physics, Academia Sinica, Taipei, TAIWAN, ROC.

11:45 AM V1.9
RATCHET EFFECT IN SURFACE ELECTROMIGRATION: SMOOTHING SURFACES BY AN AC FIELD. Choongseop Lee , Albert-László Barabási, University of Notre Dame, Department of Physics, Notre Dame, IN; Imre Derényi, Department of Atomic Physics, Eötvös University, Budapest, Puskin, HUNGARY.
 

SESSION V2: CHARACTERIZATION

 Chair: Mark F. Gyure
Monday Afternoon, April 5, 1999
Golden Gate B3 (M) 1:30 PM *V2.1
IN-SITU STUDIES OF THE FORMATION OF GA AND AL WIRES ON SI(112) FACET SURFACES. S.M. Prokes and O.J. Glembocki, Naval Research Laboratory, Washington, DC.

2:00 PM V2.2
ELECTRICAL CHARACTERIZATION OF LOW TEMPERATURE MBE GROWN GaAs. Michael J. Cich , Robert C. Lutz, Rian Zhao, Petra Specht, Eicke R. Weber, University of California-Berkeley, Department of Materials Science and Mineral Engineering, Berkeley, CA.

2:15 PM V2.3
IN-SITU DOPING IN CVD EPITAXIAL Si1-xGex: HEAVY-DOPING AND ELECTRICAL CHARACTERISTICS. Junichi Murota , Atsushi Moriya, Toshifumi Kikuchi, Takaaki Noda, Chunyang Deng, Masao Sakuraba, Takashi Matsuura, Tohoku Univ, RIEC, Sendai, JAPAN.

2:30 PM V2.4
THE USE OF ELECTRON CHANNELING PATTERNS FOR PROCESS OPTIMIZATION OF LOW TEMPERATURE EPITAXIAL SILICON USING HOT WIRE CHEMICAL VAPOR DEPOSITION. R. Matson , R. Crandall, H. Mahan, E. Iwanikczo, National Renewable Energy Labaoratory, Golden, CO; J. Thiesen, U. of Colorado, Dept of E.E., Boulder, CO.

2:45 PM V2.5
STABILIZATION OF ROCKSALT AlN IN EPITAXIAL AlN/TiN SUPERLATTICES AND ITS MECHANICAL PROPERTIES. Ilwon Kim , Murat U. Guruz, Vinayak Dravid, Anita Madan and Scott A. Barnett, Northwestern University, Department of Materials Science and Engineering, Evanston, IL; Harriet Kung and Michael A. Nastasi Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, NM.

3:00 PM BREAK

3:15 PM *V2.6
CONNECTION BETWEEN STRUCTURE AND ELECTRONIC PROPERTIES IN EPITAXIAL MAGNETIC LAYERS. F.J. Himpsel , K.N. Altmann, J.A. Con Foo, J.F. Kelly, M. G. Lagally, J. McKay, W.L. O'Brien, D.Y. Petrovykh, University of Wisconsin, Madison, WI; J.E. Ortega, Univ. del Pais Vasco, San Sebastian, SPAIN.

3:45 PM V2.7
TEMPERATURE-DEPENDENT PHOTOLUMINESCENCE STUDY OF HIGH SILICON DOPED AlGaAs AND THE CORRELATION BETWEEN THE PHOTOLUMINESCENCE SPECTRA AND DOPING LEVEL. G. Koley , Dept of Electrical Engineering, University of Massachusetts, Lowell, MA; M. Lin, W. Liu, E. Markgren and D. Biswas, Alpha Industries, Inc., Woburn, MA.

4:00 PM V2.8
COMPLETE DETERMINATION OF BURIED DISLOCATION STRUCTURES BY SCANNING TUNNELING MICROSCOPY. J. de la Figuera, A.K. Schmid , K. Pohl, N.C. Bartelt and R.Q. Hwang, Sandia National Laboratories, Livermore, CA.

4:15 PM V2.9
MULTIFUNCTIONAL OPTICAL IN SITU MONITORING OF SEMICONDUCTOR FILM GROWTH. K.A. Bertness , S.P. Hays, R.K. Hickernell, National Institute of Standards and Technology, Optoelectronics Div, Boulder, CO.

4:30 PM V2.10
SENSITIVITY OF RHEED AND PE SENSOR SIGNATURES TO MBE CONTROL VARIABLES. J.H.G. Owen and J.J. Zinck.

4:45 PM V2.11
DOPING CONTROL IN MULTIWAFER PLANETARY REACTORS. M. Deufel, D. Schmitz, M. Heuken, H. Juergensen , AIXTRON AG, Aachen, GERMANY.
 

SESSION V3: STRAINED SYSTEMS I

 Chair: Jacek K. Furdyna
Tuesday Morning, April 6, 1999
Golden Gate B3 (M) 8:30 AM *V3.1
MORPHOLOGICAL EVOLUTION OF STRAINED-ALLOY THIN FILMS. J.J. Eggleston, P.W. Voorhees , Dept of Materials Science and Engineering, Northwestern University, Evanston, IL and B.J. Spencer, Dept of Mathematics, State University of New York at Buffalo, NY.

9:00 AM *V3.2
Si(001) SURFACE MORPHOLOGY DURING SIGE ALLOY GROWTH. R.M. Tromp , IBM T.J. Watson Research Center, D. Cahill, K. Kyuno, University of Illinois at Urbana-Champaign.

9:30 AM V3.3
ENERGETIC VERSUS KINETIC PATHWAYS IN HETEROEPITAXIAL GROWTH: GROWTH AND DISSOLUTION EXPERIMENTS NEAR THERMAL EQUILIBRIUM. Silke H. Christiansen , Martin Albrecht, Horst P. Strunk, Universitaet Erlangen-Nernberg, Institut fur Werkstoffwissenschaften, Mikrocharakterisierung, Erlangen, GERMANY; Herbert Wawra, Gunther Wagner, Institut fur Kristallzechtung Berlin, Berlin, GERMANY.

9:45 AM V3.4
MORPHOLOGICAL TRANSITION OF GE ISLANDS ON SI(001) GROWN BY LPCVD. Michael Goryll , Lili Vescan, Hans Lueth, Research Centre Juelich, Institute of Thin Film and Ion Technology, Juelich, GERMANY.

10:00 AM BREAK

10:30 AM V3.5
GROWTH OF GE ON SI(001) STUDIED BY IN SITU HIGH TEMPERATURE STM. Bert Voigtlander , Institut für Grenzflachenforschung und Vakuumphysik, Forschungszentrum Juelich, Juelich, GERMANY.

10:45 AM V3.6
SHAPE, STRAIN AND ORDERING OF TRIANGULAR PYRAMIDAL GERMANIUM ISLANDS GROWN ON BORON-TERMINATED SI(111). Rogerio Paniago , Departamento de Fisica, Universade Federal de Minas Gerais, Belo Horizonte, BRAZIL; Zoltan Kovats, Markus Rauscher, Hartmut Metzger, Johann Peisl, Sektion Physik, Universität München, GERMANY; Jörg Schulze, Ignaz Eisele, Institut für Physik, Universität der Bundeswehr, Neubiberg, GERMANY.

11:00 AM V3.7
KINETIC ANALYSIS OF STRAIN RELAXATION IN THE HETEROEPITAXIAL GROWTH OF SEMICONDUCTOR FILMS ON COMPLIANT SUBSTRATES. L.A. Zepeda-Ruiz , B.Z. Nosho, R.I. Pelzel, W.H. Weinberg and D. Maroudas, Department of Chemical Engineering, University of California, Santa Barbara, CA.

11:15 AM V3.8
INITIAL STRAIN RELAXATION IN Si0.92Ge0.08/Si SUPERLATTICE STRUCTURES VIA MISFIT-DISLOCATIONS. J. Leininger , G.D. U'Ren, M.S. Goorsky, University of California, Dept of Materials Science and Engineering, Los Angeles, CA.

11:30 AM V3.9 SELF-ASSEMBLING OF EPITAXIAL NISI2 IN SI(001). S. Teichert , M. Falke, G. Beddies, H.J. Hinneberg, Institute of Physics, Chemnitz University of Technology, Chemnitz, GERMANY.
 

SESSION V4: STRAINED SYSTEMS II

 Chair: Peter W. Voorhees
Tuesday Afternoon, April 6, 1999
Golden Gate B3 (M) 1:30 PM *V4.1
APPLICATIONS OF COLUMN IV EPITAXY TO INTEGRATED-CIRCUIT DEVICES. Ted Kamins , Quantum Structures Research Initiative, Hewlett-Packard Laboratories, Palo Alto, CA.

2:00 PM *V4.2
COMPLIANT SUBSTATE PROCESSES. April S. Brown and W.A. Doolittle, School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA.

2:30 PM *V4.3
DISLOCATION-INDUCED SURFACE STRAIN ON (001) SILICON-ON-INSULATOR. P. Sutter , Colorado School of Mines, Golden, CO; M.G. Lagally, University of Wisconsin, Madison, WI.

3:00 PM BREAK

3:30 PM V4.4
SELF-LIMITING GROWTH OF COPPER ISLANDS ON RUTILE (110). D.A. Chen , M.C. Bartelt, R.Q. Hwang, K.F. McCarty, Sandia National Laboratories, Livermore, CA.

3:45 PM V4.5
X-RAY STRUCTURE INVESTIGATION OF LATERAL SURFACE NANOSTRUCTURES. Tilo Baumbach , Daniel Lubbert, Fraunhofer Institute for Non-Destructive Testing, Saarbrucken and Dresden, GERMANY; Petr Mikulik, Vaclav Holy, Masaryk University, Brno, CZECH REPUBLIK; Marc Gailhanou, LURE, Universite Paris-Sud, FRANCE; Jacques Schneck, Laurent Leprince, France Telecom, CNET/DTD, Bagneux, FRANCE; M. Jergel, Slovak Academy of Sciences, Bratislava, SLOVAKIA.

4:00 PM V4.6
OBSERVATION AND APPLICATION OF SURFACTANT PROPERTIES OF THALLIUM IN THE EPITAXIAL GROWTH OF INDIUM ARSENIDE ON GALLIUM ARSENIDE. D.F. Storm , M.D. Lange, Physics Branch, Naval Air Warfare Center, China Lake, CA.

4:15 PM V4.7
LOW-TEMPERATURE Si (111) HOMOEPITAXY AND DOPING MEDIATED BY A MONOLAYER OF Pb. Oscar D. Dubon , Paul G. Evans, John F. Chervinsky, Frans Spaepen, Michael J. Aziz, Jene A. Golovchenko, Harvard University, Division of Engineering and Applied Sciences, Cambridge, MA.

4:30 PM V4.8
IN SITU OBSERVATION OF SCALING BEHAVIOR DURING SOLUTION-PHASE GROWTH OF SURFACTANT MONOLAYERS. Daniel K. Schwartz , Ivo Doudevski, Tulane Univ, Dept of Chemistry, New Orleans, LA.

4:45 PM V4.9
COMPUTER SIMULATIONS OF TWO-DIMENSIONAL Sn-Cu ALLOYS FORMATION ON LOW-INDEX Cu SUBSTRATES. Jose F. Aguilar , Ramon Ravelo, Dept. of Physics and Materials Research Institute, Univ. of Texas at El Paso, TX; M. Baskes, Sandia National Labs., Livermore, CA.

SESSION V5: GROWTH MECHANISMS

 Chair: Jacques G. Amar
Wednesday Morning, April 7, 1999
Golden Gate B3 (M) 8:30 AM *V5.1
NUCLEATION AND GROWTH OF SUPPORTED METAL CLUSTERS AT DEFECT SITES ON MGO AND ALKALI HALIDE (001) SURFACES: THE CASES OF PD AND AG. J.A. Venables , Dept of Physics and Astronomy, Arizona State University, Tempe, AZ; G. Haas, IPE-EPFL, Lausanne, SWITZERLAND; J.H. Harding, UCL, London, UNITED KINGDOM.

9:00 AM *V5.2
SURFACE DIFFUSION BELOW THE ROUGHENING TRANSITION DURING ANNEALING AND EPITAXY. M.V. Ramana Murty and B.H. Cooper, Department of Physics and Cornell Center for Materials Research, Ithaca, NY.

9:30 AM V5.3
NUCLEATION AND GROWTH OF GaAs ISLANDS ON THE GaAs(001)-($2\times 4$) SURFACE: AN MBE-STM STUDY. H. Yang , V.P. LaBella, D.W. Bullock and P.M. Thibado, Physics Department, University of Arkansas, Fayetteville, AR.

9:45 AM V5.4
OBSERVATION OF SPUTTER EROSION ON Au(111) AND Cu(111) BY X-RAY DIFFRACTION & SCANNING TUNNELING MICROSCOPY (STM). A. Judy , E. Butler, M.V. Ramana Murty, J. Pomeroy, B.H. Cooper, Dept. of Physics and Cornell Center for Materials Research (CCMR), R.L. Headrick, Cornell High Energy Synchrotron Source, Wilson Labs, Cornell University, A.R. Woll, J.D. Brock, School of Applied and Engineering Physics and CCMR, Cornell University.

10:00 AM BREAK

10:30 AM V5.5
IN-SITU GROWTH OF COBALT SILICIDE ISLANDS STUDIED WITH LOW ENERGY ELECTRON MICROSCOPY. Peter A. Bennett and D.G. Waters, Dept of Physics and Astronomy, Arizona State University, AZ; R.M. Tromp and M.C. Reuter, IBM Watson Research Center.

10:45 AM V5.6
IN SITU DETERMINATION OF OXYGEN SEGREGATION DYNAMICS AND SURFACE RECONSTRUCTIONS ON EPITAXIAL UHV MAGNETRON SPUTTERED Mo THIN FILMS ON MgO(001) SUBSTRATES. E.B. Svedberg , T. Jemander, N. Lin, R. Erlandsson, G. Hansson, J. Birch and J.E. Sundgren, Linköping University, Department of Physics, Linköping, SWEDEN.

11:00 AM V5.7
GROWTH OF HETEROEPITAXIAL Cu(Ga,In)XSeY LAYERS AND CHARACTERIZATION OF SUBSTRATE-LAYER INTERFACES. A.N. Tiwari , M. Krejci, F.J. Haug and H. Zogg, Thin Film Physics Group, Institute of Quantum Electronics, Swiss Federal Institute of Technology, Zurich, SWITZERLAND.

11:15 AM V5.8
UHV INVESTIGATION ON MOCVD-GROWN INP(100)-SURFACES. Thomas Hannappel , Sven Visbeck, Frank Willig, Hahn-Meitner-Institut, CD, Glienickerstrasse, Berlin, Patrick Vogt, Norbert Esser, Technische Universitaet Berlin, PN, Hardenbergstrasse, Berlin, GERMANY.

11:30 AM V5.9
EPITAXIAL GROWTH OF ATOMICALLY FLAT SPIN DEPENDENT TUNNELING JUNCTIONS. Y. Li , S.X. Wang, F.B. Mancoff and B.M. Clemens, Department of Material Science and Engineering, Stanford University, Stanford, CA.

11:45 AM V5.10
X-RAY MICROBEAM INVESTIGATION OF EPITAXIAL OXIDE FILMS ON TEXTURED METAL SUBSTRATES. J.D. Budai , N. Tamura, J.S. Chung, D.P. Norton, G.E. Ice, B.C. Larson, J.Z. Tischler, C. Park, D. Lee, Oak Ridge National Laboratory*, Oak Ridge, TN; E.L. Williams, W.P. Lowe, Howard University, Washington, DC.
 

SESSION V6/BB5: JOINT SESSION: EPITAXIAL MULTICOMPONENT OXIDE FILM GROWTH

 Chair: John A. Venables
Wednesday Afternoon, April 7, 1999
Salon 7 (M) 1:30 PM V6.1/BB5.1
ION BEAM ASSISTED TEXTURE CONTROL DURING OXIDE FILM GROWTH. Liang Dong , David J. Srolovitz, University of Michigan, Department of Materials Science & Eng., Ann Arbor, MI.

1:45 PM *V6.2/BB5.2
BIAXIAL TEXTURING AT THE NUCLATION STAGE IN MGO. P.C. Wang, K.B. Do, M.R. Beasley, T.H. Geballe, R.H. Hammond , Stanford University, Stanford, CA.

2:15 PM *V6.3/BB5.3
FERROELECTRICITY INDUCED BY LATTICE MISFIT STRAIN IN HETEROEPITAXIAL (BaxSr1-x)TiO3 FILMS. Kazuhide Abe , Naoko Yanase, Kenya Sano, Takashi Kawakubo, Toshiba Corp., Materials and Devices Research Laboratories, Kawasaki, JAPAN.

2:45 PM V6.4/BB5.4
LUMINESCENT CHARACTRISTICS OF PULSED LASER DEPOSITED EPITAXIAL Eu-DOPED Y2O3 THIN FILMS. D. Kumar , K.G. Cho, Zhan Chen, V. Craciun, P.H. Holloway and Rajiv K. Singh, Department of Materials Science and Engineering, University of Florida, Gainesville, FL; J. Perriere, GPS, Universite Paris VII et VI, FRANCE.

3:00 PM BREAK

3:30 PM V6.5/BB5.5
SURFACE MORPHOLOGY OF EPITAXIAL YBCO AND LSCO/YBCO BILAYER FILMS GROWN ON MISCUT (001) SrTiO3 SUBSTRATES STUDIED BY SCANNING TUNNELING MICROSCOPY. R.A. Rao and C.B. Eom, Department of Mechanical Engineering & Materials Science, Duke University, Durham, NC.

3:45 PM V6.6/BB5.6
LIQUID COMPOUNDS FOR CVD OF ALKALINE EARTH METALS. Roy G. Gordon , Sean T. Barry, Randy N. R. Broomhall-Dillard, Nicholas DiCeglie, Jr., Xinye Liu and Daniel J. Teff, Harvard University Chemical Laboratories, Cambridge, MA.

4:00 PM V6.7/BB5.7
INVESTIGATION OF GROWTH EVOLUTION IN c-AXIS SrBi2Nb2O9 EPITAXIAL THIN FILMS. J. Lettieri , Y. Jia, D.G. Schlom, Penn State University, Dept of Materials Science and Engineering, University Park, PA; G.W. Brown, M.E. Hawley, Los Alamos National Laboratory, Los Alamos, NM.

4:15 PM V6.8/BB5.8
CONTROL OF MBE-GROWN DyBa2Cu3O7 THIN FILMS USING RHEED INTENSITY OSCILLATIONS. P.A. Kraus , K.R. Nikolaev, W.K. Cooley and A.M. Goldman, Univ. of Minnesota, School of Physics and Astronomy, Minneapolis, MN.

4:30 PM *V6.9/BB5.9
ENGINEERING OXIDE MULTILAYERS USING ATOMIC LAYER BY LAYER MOLECULAR BEAM EPITAXY. J.N. Eckstein , J. O'Donnell, S. Oh, A. Andrus, University of Illinois, Department of Physics, Urbana, IL; I. Bozovic, Oxxel GMBH, Bremen, GERMANY.
 

SESSION V7: POSTER SESSION: EPITAXIAL GROWTH

 Chairs: Albert-Laszlo Barabasi and Tom P. Pearsall
Wednesday Evening, April 7, 1999
8:00 P.M.
Salon 7 (M) V7.1
FILM GROWTH BY CLUSTER DEPOSITION MOLECULAR DYNAMICS SIMULATIONS AND MESOSCOPIC MODELLING. A.M. Mazzone , CNR, Bologna, ITALY.

V7.2
STRAIN RELAXATION AND 3-D CLUSTERING OF HETEROEPITAXIAL SiGe FILMS GROWN ON Si(001) VIA STRESS-DRIVEN SURFACE EVOLUTION. Cengiz S. Ozkan , Applied Micro Circuits Corporation, San Diego, CA.

V7.3
LATERAL INxGA1-xP HETEROSTRUCTURE OBTAINED BY SINGLE STEP GROWTH ON PRE-PATTERNED SUBSTRATE BY CHEMICAL BEAM EPITAXY. Maria P.P. de Castro , Jefferson Bettini, Carlos A. Ribeiro, Mauro M. de Carvalho, Newton C. Frateschi, UNICAMP, IFGW, DFA-LPD, Campinas, BRAZIL.

V7.4
A KINETIC MONTE CARLO MODEL FOR Ga DESORPTION FROM CHEMISORBED AND PHYSISORBED STATES DURING HIGH TEMPERATURE GaAs MBE. K. Mahalingam , D.L. Dorsey, W.T. Taferner and K.G. Eyink, Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright-Patterson Air Force Base, OH.

V7.5
SPIN-RESOLVED PHOTOEMISSION STUDY OF Gd(0001) THIN FILMS. O. Zeybek , N.P. Tucker, Surface Science Research Centre, University of Liverpool, Liverpool, UNITED KINGDOM; S.D. Barrett, Department of Physics, University of Liverpool, Liverpool, UNITED KINGDOM and E. Seddon, CLRC Daresbury Laboratory, Daresbury, Warrington, UNITED KINGDOM.

V7.6
InxGa1-xAs HETEROEPITAXIAL LAYERS ON POROUS GaAs. Yu Buzynin , N. Vostokov, V. Daniltsev, Yu Drozdov, O. Khrykin, A. Murel, V. Shashkin, Institute for Physics of Microstructures, Russian Academy of Science (IPM RAS), Nizhny Novgorod, RUSSIA.

V7.7
HETEROEPITAXIAL GROWTH OF ZINC OXIDE SINGLE CRYSTAL THIN FILMS ON (111) PLANE YSZ BY PULSED LASER DEPOSITION. Hiromichi Ohta , Hiroaki Tanji, Masahiro Orita, HOYA Corporation, Tokyo, JAPAN; Hideo Hosono, Hiroshi Kawazoe, Tokyo Institute of Technology, Yokohama, JAPAN.

V7.8
ELECTRICAL,STRUCTURE,AND OPTICAL CHARACTERIZATION OF $\Delta$ - DOPING EFFICIENCY OF InGaAs/AlGaAs PSEUDOMORPHIC HEMT STRUCTURES GROWN BY MOLECULAR BEAM EPITAXY. M. Lin , W. Liu, D. Biswas, Alpha Industries, Inc., Woburn, MA; G. Koley, Dept of Electrical Engineering, University of Massachusetts, MA.

V7.9
DEFECT STRUCTURE IN LATERAL EPITAXIAL OVERGROWTH GAN. K.A. Dunn and S.E. Babcock, Materials Science Dept., University of Wisconsin, Madison, WI; L. Zhang and T.F. Kuech, Chemical Engineering Dept., University of the Wisconsin, Madison, WI.

V7.10
MBE GROWN PLANAR DOPED BARRIER DIODES. Vo Van Tuyen , Hungarian Academy of Sciences, Research Institute for Technical Physics and Materials Science, Budapest, HUNGARY.

V7.11
HOMOEPITAXIAL GROWTH OF SILICON AT LOW TEMPERATURE. J. Platen , Hahn-Meitner-Institut, Abt. Photovoltaik, Berlin, GERMANY; U. Zeimer, Ferdinand-Braun-Institut, Berlin, GERMANY; B. Selle, K. Kliefoth, S. Brehme, W. Fuhs, Hahn-Meitner-Institut, Abt. Photovoltaik, Berlin, GERMANY.

V7.12
GROWTH MECHANISMS OF EPITAXIAL METALLIC OXIDE SrRuO3 THIN FILMS STUDIED BY SCANNING TUNNELING MICROSCOPY. C.B. Eom , R.A. Rao, Q. Gan, Duke University, Department of Mechanical Engineering and Materials Science, NC.

V7.13
SELF-LIMITED GaAs WIRE GROWTH BY MOVPE AND APPLICATION TO InAs QUANTUM DOT ARRAY. Yuuki Aritsuka , Tetsuhito Umeda, Junichi Motohisa, Takashi Fukui, Research Center for Interface Quantum Electronics, Hokkaido University, Sapporo, JAPAN.

V7.14
TRANSMISSION ELECTRON MICROSCOPY STUDY OF InGaAs/GaAs STRUCTURAL EVOLUTION NEAR THE STRANSKI-KRASTANOW TRANSFORMATION. J. Wellman , T. George, R. Leon, Jet Propulsion Laboratory, California Institute of Technology, S. Fafard, Institute for Microstructural Sciences, National Research Council, Ottawa, CANADA.

V7.15
GROWTH MECHANISMS OF EPITAXIAL ATOMIC-SMOOTH SrRuO3 THIN FILMS ON SrTiO3. C.L. Chen , Y. Liou, S. Chen, G.P. Luo, C.W. Chu, Texas Center for Superconductivity, University of Houston, Houston, TX.

V7.16
EPITAXIAL LATERAL OVERGROWTH OF GALLIUM ARSENIDE STUDIED BY SYNCHROTRON TOPOGRAPHY. R. Rantamaki, T. Tuomi , Helsinki University of Technology, FINLAND; Z.R. Zytkiewicz, D. Dobosz, Polish Academy of Sciences, POLAND; P.J. McNally, Dublin City University, IRELAND; A.N. Danilewsky, Freiburg, GERMANY.

V7.17
INTERFACE CORRELATION EFFECT IN 2D GaAs/AlAs HETEROSTRUCTURES. M.V. Belousov , A.Yu. Chernyshov, I.E. Kozin, Inst of Physics, St. Petersburg State Univ, St. Petersburg, RUSSIA; C. Ell, H.M. Gibbs, G. Khitrova, Optical Sciences Center, Univ of Arizona, Tucson, AR.

V7.18
EPITAXIAL GROWTH OF IRON ON ZnSe(001):AN IN SITU GRAZING INCIDENCE X-RAY DIFFRACTION STUDY. Victor H. Etgens , Laureen Carbonell, Mahmoud Eddrief, Lab. de Mineralogie et Cristallographie, Paris, FRANCE; Serge Tatarenko and Cristophe Bougognon, Lab. de Spectrometrie Physique, Grenoble, FRANCE.
 

SESSION V8: NOVEL EPITAXY

 Chair: Tom P. Pearsall
Thursday Morning, April 8, 1999
Golden Gate B3 (M) 8:30 AM *V8.1
THE FIRST GROWTH OF DEVICE QUALITY EPITAXIAL SILICON AT EXTREMELY LOW TEMPERATURES USING HOT WIRE CHEMICAL VAPOR DEPOSITION. Thiesen, J. , E.E. Dept., Univeristy of Colorado, Boulder, CO; Iwaniczo, E., Jones, K., Matson, R., Reedy, R., Mahan, H., Crandall, R., National Renewable Energy Laboratory, Golden, CO.

9:00 AM V8.2
GROWTH OF COHERENT CARBON NITRIDE FILMS ON Si (111) BY REACTIVE LASER ABLATION. Paolo Mengucci , Gianni Barucca, Giuseppe Majni, Univ of Ancona, Dept of Materials Science, Ancona, ITALY; Gilberto Leggieri, Armando Luches, Maurizio Martino, Univ of Lecce, Dept of Physics, Lecce, ITALY.

9:15 AM V8.3
MASK INDUCED STRAIN IN GaAs LAYERS GROWN BY LIQUID PHASE EPITAXIAL LATERAL OVERGROWTH. Zbigniew R. Zytkiewicz , Jaroslaw Domagala, Danuta Dobosz, Inst of Physics, Polish Academy of Sciences, Warsaw, POLAND.

9:30 AM V8.4
CLUSTER 'CONTACT EPITAXY'- DIRECT EVIDENCE FOR NOVEL PARTICLE: SUBSTRATE INTERACTIONS. Mark Yeadon , Claus Zimmermann, Judith C. Yang, Robert S. Averback and J. Murray Gibson, University of Illinois, Materials Research Laboratory, Urbana, IL.

9:45 AM V8.5
EFFECT OF HYDROGEN IN ALAS GROWTH BY ATOMIC HYDROGEN-ASSISTED MOLECULAR BEAM EPITAXY. Kee-Youn Jang , Yoshitaka Okada, Mitsuo Kawabe, University of Tsukuba, Institute of Materials Science, Tsukuba, JAPAN.

10:00 AM BREAK

10:30 AM V8.6
LOCALIZED DOPING ENHANCEMENT BY PHOTON-ASSISTED CHEMICAL BEAM EPITAXY. Bin Q. Shi , Charles W. Tu, University of California, San Diego, Dept of Electrical and Computer Engineering, La Jolla, CA.

10:45 AM V8.7
EPITAXIAL GROWTH OF CUBIC AIN ON Si (001) BY PLASMA SOURCE MOLECULAR BEAM EPITAXY. Margarita P. Thompson , Dept. of Chemical Engineering and Materials Science, Gregory Auner, Dept. of Electrical and Computer Engineering, Wayne State University, Detroit, MI.

11:00 AM V8.8
EPITAXIAL GROWTH OF FE/TB AND TB/FE BILAYERS ON NB(110)/SAPPHIRE(11$\bar{2}$0). T. Ruckert, W. Keune , G. Mercator Univ., Lab. of Applied Physics, Duisburg, GERMANY; F. Richomme, J. Teillet, Univ. de Rouen, Lab. de Magnetism et Application, Mont-Saint-Aignant Cedex, FRANCE.

11:15 AM V8.9
HOMOEPITAXIAL GROWTH OF GAN USING SEEDED SUPERSONIC MOLECULAR BEAMS. A. Michel , E. Chen, H.H. Lamb, Dept of Chemical Engineering, North Carolina State University, Raleigh, NC; D. Thomson, R.F. Davis, Dept of Materials Science and Engineering, North Carolina State University, Raleigh, NC.
 

SESSION V9/W11: JOINT SESSION: STRUCTURAL CHARACTERIZATION AND GROWTH II

 Chair: Albert-Laszlo Barabasi
Thursday Afternoon, April 8, 1999
Golden Gate C2 (M) 1:30 PM *V9.1/W11.1
FORMATION AND STABILITY OF SELF-ASSEMBLED CdSe QUANTUM DOTS ON ZnSe. J.K. Furdyna , Department of Physics, University of Notre Dame, Notre Dame, IN.

2:00 PM *V9.2/W11.2
SELF-ORGANIZED FORMATION OF QUANTUM DOTS OF ALMOST ANY MATERIAL ON ANY SUBSTRATE. Zhenyu Zhang , Oak Ridge National Laboratory, Solid State Division, Oak Ridge, TN.

2:30 PM V9.3/W11.3
COHERENT Sn-RICH SnxSi1-x QUANTUM DOT FORMATION VIA PHASE SEPARATION FROM HOMOGENEOUS ULTRATHIN SnxSi1-x/Si EPITAXIAL ALLOY FILMS. Kyu Sung Min , Nicholas J. Choly and Harry A. Atwater, Watson Laboratory of Applied Physics, California Institute of Technology, Pasadena, CA.

2:45 PM V9.4/W11.4
THE SELF-ASSEMBLY OF UNIFORM HETEROEPITAXIAL ISLANDS. Cheng-hsin Chiu , Institute of Materials Research and Engineering, National University of Singapore, SINGAPORE.

3:00 PM BREAK

3:30 PM *V9.5/W11.5
NANOSCOPIC SPECTROSCOPY OF SELF-ASSEMBLED QUANTUM DOTS: INTER-DOT POPULATION SHUFFLING AND ITS EFFECTS ON MANY-BODY STATES. C.K. Shih , Department of Physics, University of Texas, Austin, TX.

4:00 PM *V9.6/W11.6
PEPARATION AND OPTICAL PROPERTIES OF PURE GE AND C-INDUCED GE ISLANDS ON SI. Karl Eberl and Oliver G. Schmidt, Max-Planck-Institut for Solid State Research, Stuttgart, GERMANY; Oliver Kienzle and Frank Ernst, Max-Planck-Institut for Metal Research, Stuttgart, GERMANY.

4:30 PM *V9.7/W11.7
UNIFORM QUANTUM WIRE AND QUANTUM DOT ARRAYS BY NATURAL SELF-FACETING ON PATTERNED SUBSTRATES. Richard Notzel , Paul-Drude-Institute for Solid State Electronics, Berlin, GERMANY.

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