Materials Gateway
Resource Center
Login button
 Open/CloseSend Us Your Feedback

Symposium D: Electronic Materials

Symposium D: Electronic Materials Image

SYMPOSIUM D

D: Electronic Materials
June 9 - 12, 2008
Chairs
Shriram Ramanathan     Harvard University
Evgeni Gusev     QUALCOMM
Zhanguo Wang     Chinese Academy of Sciences
Shengchun Qu     Chinese Academy of Sciences
Kohei M. Itoh     Keio University


* Invited paper

SESSION D1
Monday Morning, June 9, 2008
Auditorium
Session Chairs:  Kohei Itoh and Yotung Wu

10:45 AM *D1.1
Gate Stack Technology for Nano-scale CMOS Devices. Byoung Hun Lee, C. S. Park, P. Kirsch, J. Huang, P. Sivasubramani, C. Burham, D. Gilmer, C. Y. Yang, P. Lysaght, G. Bersuker, P. Majhi, R. Harris, H. Tseng and R. Jammy; Sematech, Austin, Texas.

11:15 AM D1.2
Germanium Surface Passivation for High Mobility Devices. S. J. Wang, Institute of Materials Research & Engineering, Singapore, Singapore.

11:30 AM *D1.3
Structure and Composition of high-κ films on Novel Channel Materials. Lyudmila Goncharova1, Mateus Dalponte1, Tian Feng1, Eric Garfunkel2 and Torgny Gustafsson1; 1Physics and Astronomy, Rutgers University, Piscataway, New Jersey; 2Chemistry, Rutgers University, Piscataway, New Jersey.



SESSION D2
Monday Afternoon, June 9, 2008
Auditorium
Session Chairs:  Torgny Gustafsson and Byoung Hun Lee

1:30 PM D2.1
Preparation And Electrical Properties Of Sputtered Alumina On Silicon Substrate For High-K Dielectric Material. Yutaka Nishioka, Natsuki Fukuda, Shin Kikuchi, Isao Kimura, Takehito Jimbo and Koukou Suu; Sectin2-1Institute For Semiconductor Technologies, ULVAC, Inc., Shizuoka, Japan.

1:45 PM D2.2
Phonon-Energy-Coupling Enhancement-A New Physics Effect: Leakage Current Reduction of Gate Dielectrics. Zhi Chen, Electrical & Computer Engineering, University of Kentucky, Lexington, Kentucky.

2:00 PM D2.3
Sulfur Passivation of Germanium for High-K/Metal Gate CMOS. Eric Garfunkel and ChienLan Hsieh; Departments of Chemistry and Physics, Rutgers University, Piscataway, New Jersey.

2:15 PM D2.4
Growth and Characterization of Ultra-low-dislocation Ge Epilayer on Si Substrate by Ultra-high Vacuum Chemical Vapor Deposition. Cheng Li, Zhiwen Zhou, Zhimeng Cai, Hongkai Lai and Songyan Chen; Department of Physics, Xiamen University, Xiamen, Fujian, China.

2:30 PM D2.5
Accurate Determination of the Intrinsic Diffusivities of B, P and As in Si: The Influence of SiO2 Films. Yoko Kawamura1, Miki Naganawa1, Yasuo Shimizu1, Masashi Uematsu1, Kohei M. Itoh1, Hiroyuki Ito2, Hideaki Ishikawa2, Mitsutoshi Nakamura2 and Yuzuru Ohji2; 1Keio University, Yokohama, Japan; 2Selete, Tsukuba, Japan.

2:45 PM D2.6
Growth of Two-dimensionally Ordered GeSi Islands on Patterned Si(001) Substrates. Peixuan Chen1, Jianhui Lin1, Yongliang Fan1, Zuimin Jiang1, Guenther Bauer2 and Zhenyang Zhong1; 1Surface Physics Laboratory, Fudan University, Shanghai, China; 2Institute for Semiconductor Physics, University Linz, Linz, Austria.

3:00 PM D2.7
Phosphorus Atomic Arraies Along Step Edge On Vicinal Si(111) Surfaces. Shing-Chiang Huang, Yohei Shiren and Kohei M. Itoh; Keio University, Yokohama, Japan.

3:15 PM BREAK

3:45 PM D2.8
Abstract Withdrawn

4:00 PM D2.9
Metal-Organic Chemistry for Advanced Interconnects. Val M Dubin, eMAT Technology LLC, Moses Lake, Washington.

4:15 PM D2.10
Model of Electromigration and Correlation with Experiments. Florian Cacho, Vincent Fiori, Lise Doyen, Cedrick Chappaz, Clement Tavernier and Herve Jaouen; STMicroelectronics, Crolles, France.

4:30 PM D2.11
Impact of the Solvent and the Material Surface Properties on the Determination of the Pore Sealing Effect. Diane Rebiscoul1, Lucile Broussous2, Wilfried Puyrenier2, Vincent Rouessac3 and Andre Ayral3; 1CEA-LETI, MINATEC, Grenoble, France; 2STMicroelectronics, Grenoble, France; 3IEM, Montpellier, France.

4:45 PM *D2.12
The low-k Dielectric Properties of Nanostructured Diamond Films. Changzhi Gu and Zongli Wang; Institute of Physics, Beijing, China.

5:15 PM D2.13
Reliability and Integration Issus in Chemical Mechanical Planarization for Interconnect Applications. Ashok Kumar and Qiang Huang; Mechanical Engineering, University of South Florida, Tampa, Florida.

SESSION D3: Poster Session I
Monday Evening, June 9, 2008
8:00 PM
Exhibition Hall
 

D3.1
Deep Level Parameters From Frequency Resolved Capacitance Spectroscopy (FRCS) Under Pressure. Ashok Kumar Saxena, E & CE, I.I.T, Roorkee, Uttrakhand, India.

D3.2
DNA Wire Device Fabricated on Au Patterned Si/SiO2 Surface by the Usage of DNA Intercalator Molecules and Orthogonal Self-assembly. Katsuaki Kobayashi1, Jiro Hikida1, Sho Fujii1, Hisakazu Nozoye3, Hideyuki Koseki1, Ken Tsutsui2, Yasuo Wada2 and Masa-aki Haga1; 1Department of Applied Chemistry, Faculty of Science and Engineering, Chuo University, Bunkyo, Tokyo, Japan; 2Graduate School of Interdisciplinary New Science, Toyo University, Kawagoe, Saitama, Japan; 3ULVAC-PHI Inc., Chigasaki, Kanagawa, Japan.

D3.3
Epitaxy Growth and Electronic Properties of La2Hf2O7 Thin Films by Pulsed Laser Deposition. Feng Wei, Hailing Tu, Yi Wang, Shoujing Yue and Jun Du; Advanced Electronic Materials Institute, General Research Institute for Nonferrous Metals, Beijing, Beijing, China.

D3.4
Low Temperature Chemical Reaction at Gold/yttria Interface Characterized by Dielectric Relaxation Measurement. Masashi Ishii1, Aiko Nakao2 and Kenji Sakurai1; 1Quantum Beam Center, National Institute for Materials Science (NIMS), Tsukuba, Ibaraki, Japan; 2RIKEN, Wako, Saitama, Japan.

D3.5
Gd2O3 High-K Gate Dielectrics Deposited by Magnetron Sputtering. Shoujing Yue, Feng Wei, Yi Wang, Zhimin Yang and Jun Du; Advanced Electronic Materials Institute, General Research Institute for Nonferrous Metals, Beijing, China.

D3.6
Preparation and Characterization of Gd2O3-doped HfO2 high-k Gate Dielectric Thin Films by RF Sputtering. Mei Ji, Lei Wang and Jun Du; Advanced Electronic Materials Institute, Beijing General Research Institute for Nonferrous Metals, Beijing, Beijing, China.

D3.7
Abstract Withdrawn

D3.8
Effects of Si Surface Pre-treatment with Remote Hydrous Plasma on the Structure and Electrical Characteristics of metal/high-k oxide/Si (MOS) Structure. Cheng Hao Hou and Tai-Bor Wu; material science, National Tsing Hua University, Hsinchu, Taiwan.

D3.9
Preparation of Nanometer Silica Sol and Application on CMP slurry for ULSI Silicon Dioxide Dielectric. Baimei Tan, Xinhuan Niu, Huiling Shi, Yuling Liu and Chunxiang Cui; microelectronics, Tianjin, China.

D3.10
Low Leakage Current of Bi1.5Zn1.0Nb1.5O7 for high-K Gate Dielectric Applications. Minghui Zhang, Hong Wang, Xiaoguang Li and Xi Yao; Electronic Materials Research Laboratory,Xi'an Jiaotong University, Xi'an, China.

D3.11
Deep Levels, Transport and THz Emission Properties of SiGe/Si Quantum-well Structures. Miron S Kagan1, Irina V Antonova2, Svetlana A Smagulova3 and Efim P Neustroev3; 1Semiconductor Dept., Institute of Radio Engineering and Electronics of Russian Ac. Sci., Moscow, Russian Federation; 2Institute of Semiconductor physics, Novosibirsk, Russian Federation; 3Physics Dept, Yakutsk State University, Novosibirsk, Russian Federation.

D3.12
Effects of Termal Treatments on the Contact of Au/p-CdZnTe at Different Temperatures. Xiaoyan Liang, Wenbin Sang, Jiahua Min, Changjun Wang and Chenying Zhou; Electronic Information Materials, Shanghai university, Shanghai, China.

D3.13
Decreasing in Dielectric Loss of Ba0.6Sr0.4TiO3 Thin Films using HfSixOy Buffer Layers by Pulsed Laser Deposition. Yan Geng, Jinrong Cheng, Shengwen Yu, Wenbiao Wu and Zhongyan Meng; Shanghai University, Shanghai, China.

D3.14
Quantitative Analysis of Carbon Nitride Films by RF Magnetron Sputter with DC Bias. Sungpil Lee1, Jigong Lee3, Shaestagir Chowdhury2 and Sanghoon Lee1; 1Electronic Engineering, Kyungnam University, Masan, Kyungnam, South Korea; 2Intel corporation, Hilsboro, Oregon; 3Case Western Reserve University, Cleveland, Ohio.

D3.15
Experiment and Modeling of Chemical-Mechanical Planarization for Interconnect Technology. Qiang Huang1, Xi Zhang1, Hui Wang1, Ashok Kumar2 and Jingmei Zhai3; 1Industrial and Management Systems Engineering, University of South Florida, Tampa, Florida; 2Mechanical Engineering, University of South Florida, Tampa, Florida; 3School of Mechanical Engineering, South China University of Technology, Guangzhou, China.

D3.16
Investigation about Nanometer Slurry of Chemical Mechanical Planarization in ULSI Fabrication. Wei-wei Li, electron science and technology, school of information engineering, Tianjin, China.

D3.17
Morphology and Microstructure Control of Sputter-deposited Copper Films by the Addition of Chromium. Xinjian Wang1 and Xiaofeng Xu2; 1Shanghai jiaotong university, Shanghai, China; 2Applied Physics Department, Dong Hua University, Shanghai, Shanghai, China.

D3.18
Evaluation of WN film as Barrier Layer for ULSI-Cu Metallization. Xiuhua Chen, Weiqiang Zhang, Jinzhong Xiang and Lihong Wang; Faculty of physical science and technology,Department of materials science and engineering, Yunnan University, Kunming, Yunnan province, China.

D3.19
Growth and Fundamental Properties of SiGe Single Crystal. Xinhuan Niu, Xiaohong Zhao, Simiao Zong, Baimei Tan and Yuling Liu; Microelectronics, Tianjin, China.

D3.20
Simulation of SiC Epitaxial Growth in a Hot Wall CVD Reactor. Wei Jia1,2, Yuming Zhang1,2 and Yimen Zhang1,2; 1School of Microelectronics, Xidian University, Xi'an, shaanxi, China; 2Key Lab of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices;, Xi'an, shaanxi, China.

D3.21
A Study of Metal Nitride Gate Electrodes with Tunable Work Function. Jung-Hsiang Lee, Cheng-Yeh Tsai, Li-Shu Tu and Chang-Llao Kuei-Shu; Chin-Yun University, Jung-Li, Taiwan.

D3.22
Effect of Cr Sticking Layer on Residual Stress and Electrical Resistivity of Cu Films Adherent on Polymer Substrates. HaoLiang Sun, Zhong Xiao Song, Ping Huang, Yan Huai Li and Ke Wei Xu; Xi'an JIaoTong University, Xi' an, China.

D3.23
Multifunctional Spintronic Materials Fex-C1-x/Si and Cox-C1-x/Si. Xiaozhong Zhang1,2, Lihua Wu1,2, Xin Zhang1,2, Xing Liao1,2 and Caihua Wan1,2; 1Advanced Materials Laboratory, Department of Materials Science and Engineering, Tsinghua University, Bejing, China; 2Beijing National Center for Electron Microscopy, Bejing, China.

D3.24
Detached Solidification of InSb: Te and InSb: Tl Bulk Single Crystal Grown by Vertical Directional Solidification Technique. Dattatray Bhairu Gadkari1 and Brijmohan Arora2; 1Department of Physics, Mithibai College, Mumbai-400056, Maharashtra, India; 2CMP & Ms, Tata Institute of Fudamental Research, Mumbai-400005, Maharashtra, India.

D3.25
Epitaxial Growth AlN of and ZnO Semiconductor Films on SrTiO3 (100) Substrate. Jun Zhu, Dan Zhao, Xianhua Wei and Yanrong Li; State Key Laboratory of Electronic Thin Films and Integrated Devices, Chengdu, China.

D3.26
Comparison of InAs/GaSb Superlattice on GaSb and GaAs Substrates. Jie Guo1,2, Ruiting Hao3, Huijuan Chen2, Zhengyu Peng2, Weiguo Sun2 and Yingqiang Xu3; 1Material School, Northwest Polytechnical University, Xian, China; 2Luoyang Optoelectro Technology Development Center Optoelectronics Detector Institute, Luoyang, China; 3State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China.

D3.27
Phase Formation and Interface Structures of Ni/6H-SiC Ohmic Contacts. Wei Huang, Boyuan Chen, Zhizhan Chen and Erwei Shi; Shanghai Institute of Ceramics Chinese Academy of Science, Shanghai, China.

D3.28
Thick Crystalline GaN Grown on a Nanoporous GaN Template by Hydride Vapor Phase Epitaxy. Xinzhong Wang1,2, Guanghui Yu1, Chaotong Lin1,2, Mingxia Cao1,2, Hang Gong1, Ming Qi1 and Aizhen Li1; 1State Key laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences, Shanghai, Shanghai, China; 2Graduate School of the Chinese Academy of Sciences, Beijing, Beijing, China.

D3.29
Fabrication and Contact Properties of Ni/ZnO Transparent Electrode Thin Film on p-GaN. Liang Fang1,2, Jianxin Dong1, Liping Peng1 and Chunyang Kong3; 1Applied Physics, ChongQing University, ChongQing, ChongQing, China; 2.Key Laboratory of Optoelectronic Technology and Systems of Education Ministry of China, ChongQing University, ChongQing, Chongqing, China; 3College of Physics and Information Technology, ChongQing Normal University, ChongQing, Chongqing, China.

D3.30
Epitaxial Growth of BaTiO3 Thin Film on SrTiO3 Buffered GaAs Substrates. Weng Huang1,2, Zhenping Wu1 and Jianhua Hao1; 1Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China; 2China and State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China, Chengdu, Sichuan, China.

D3.31
Impact of Graphitization Degree of Crucible on SiC PVT Growth. Xi Liu, Erwei Shi, Lixin Song, Zhizhan Chen and Boyuan Chen; Shanghai Institute of Ceramics Chinese Academy of Science,, Shanghai, China.

D3.32
Morphological and Structural Analysis of GaN Nanowires. Gerard nouet1, Chaotong Lin2,3, Guanghui Yu2, Mingxia Cao2,3, Xingzhong Wang2,3, Benliang Lei2,3, Shen Meng2, Ming Qi2, Aizhen Li2 and Jun Chen4,1; 1ENSICAEN/CIMAP, University of Caen, Caen, France; 2State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Shangai, China; 3Graduate School of the Chinese Academy of Sciences, Beijing, China; 4Laboratoire de Recherche sur les Propriétés des Matériaux Nouveaux, Université de Caen, IUT d’Alençon, Damigny, France.

D3.33
Growth of InGaN-based Laser Diode Structure on Silicon (111) Substrate. Ahmad Shuhaimi Bin Abu Bakar1,2, Hiroyuki Kawato1,2, Youhua Zhu1,2 and Takashi Egawa1,2; 1Research Center for Nano-Device and System, Nagoya Institute of Technology, Nagoya, Aichi, Japan; 2Department of Engineering Physics, Electronics and Mechanics, Graduate School of Engineering, Nagoya Institute of Technology, Nagoya, Aichi, Japan.

D3.34
Microstructure and Crystallographic Features of Silicon Carbide Nanowires Investigated by HREM. Yuefei Zhang1, Xiaodong Han1, Kun Zheng1, Ze Zhang1, Yajuan Hao2 and Xiangyun Guo2; 1Institute of Microstructure and Property of Advanced Materials, Beijng University of Techology, Beijing, China; 2State Key Laboratory of Coal Conversion, Institute of Coal Chemistry, Chinese Academy of Sciences, Beijing, China.

D3.35
The Piezoresistor Effects in Semiconductor Nano-film of Superlattice. Zhang Binzhen2,1, Xue Chenyang2, Zhang Wendong1, Liu Jun1 and Xiong Jijun1; 1School of Electronic and Computer Science and Technology, North University of China, Taiyuan, Shanxi, China; 2National Key Laboratory For Electronic Measurement Technology, Taiyuan, Shanxi, China.

D3.36
First-principles Study of P-terminated GaP(001)(1×2) Surface Adsorbed with Half Monolayer of Sulfur. Dengfeng Li, Institute of Applied Physics, Chongqing University of Posts and Telecommunications,, Chongqing, China; Department of Applied Physics,University of Electronic Science and Technology of China, Chengdu, China.

D3.37
Effects of Growth Temperature on Surface Morphology of Indium Nitride. Shou-Yi Kuo1, Wei-Chun Chen2 and Chien-Nan Hsiao2; 1Department of Electronic Engineering, Chang Gung University, Tao-Yuan, Taiwan; 2Instrument Technology Research Center, National Applied Research Laboratories, Hsinchu, Taiwan.

D3.38
First-principles Study of In-covered GaAs (001) Surface. Dengfeng Li1,2 and Hui-ning Dong1; 1Institute of Applied Physics,Chongqing University of Posts and Telecommunications, Chongqing, China; 2Department of Applied Physics, University of Electronic Science and Technology of China,, Chengdu, China.

D3.39
AlGaN/GaN Heterostructures for Hot Electron and Quantum Effects. Svetlana A. Vitusevich1, Victor A. Sydoruk1, Andriy M. Kurakin1, Norbert Klein1, Michail V. Petrychuk2, Andriy V. Naumov3 and Alexander E. Belyaev3; 1Institut für Bio- und Nanosysteme and CNI - Center of Nanoelectronic Systems for Information Technology, Forschungszentrum Juelich, Juelich D-52425, Germany; 2Taras Shevchenko National University, Kiev 01033, Ukraine; 3Institute of Semiconductor Physics, NASU, Kiev 03028, Ukraine.

D3.40
Abstract Withdrawn

D3.41
Photoluminescence and Preparation of SiO2-CdTe Multilayer Film by Layer-by-layer Self-assembly. Ping Yang and Norio Murase; Photonics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 1-8-31, Midorigaoka, Ikeda city, Osaka 563-8577, Japan.

D3.42
Preparation and Characterization of CdSe Semiconductor Films for New Generation Solar. Hilda E. Esparza-Ponce1,2, Jorge Hernandez-Borja1, Yurii V. Vorobiov1, Rafael Ramirez-Bon1 and Jesus Gonzalez-Hernandez2; 1Unidad Queretaro, CINVESTAV-IPN, Queretaro, QRO, Mexico; 2CIMAV, Chihuahua, Chihuahua, Mexico.

D3.43
Solution-processed Ultraviolet Photodetectors Based on Colloidal ZnO Nanoparticles. Yizheng Jin1, Neil Greenham2, Jianpu Wang2, Baoquan Sun2 and James Blakesley2; 1State Key Laboratory of Silicon Materials, Hangzhou, China; 2Cavendish Laboratory, Cambridge, United Kingdom.

D3.44
Preparation and Properties of a Novel Near Infrared Photovoltaic Detectors Single-crystal Material. Linghang Wang, Wanqi Jie and Yang Yang; School of Materials Science and Engineering, State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi'an, Shaanxi, China.

D3.45
MOCVD Prepared ZnO Transparent and Conducting Contacts for GaN LEDs and Photovoltaics. Gary S. Tompa1, S. Sun1, L. G. Provost1 and C. Huang2; 1Structured Materials Industries, Inc., Piscataway, New Jersey; 2General Semiconductor Tools, Shanghai, China.

D3.46
Defect Study in Zinc Oxide Related Structures - Electrical and Optical Characterization. Qilin Gu1, Chi-Chung Ling1, Chor-Keung Cheung1, Xuemin Dai1, Shijie Xu1, Kai-Hang Tam1, Aleksandra Djurisic1, Ranshi Wang2, Hock-Chun Ong2, Gerhard Brauer3, Wolfgang Anwand3 and Wolfgang Skorupa3; 1Department of Physics, The University of Hong Kong, Hong Kong, China; 2Department of Physics, The Chinese University of Hong Kong, Hong Kong, China; 3Semiconductor Materials Division, Forschungszentrum Dresden-Rossendorf, Dresden, Germany.

D3.47
Morphology Modulation of ZnO Nanostructure Deposited on Transparent Conductive Substrate. Ming Chang, School of Materials Science and Enigneering, Wuhan University of Technology, Wuhan, hubei, China.

D3.48
Study of the Bioactivity and Stability of ZnO Nanostructures in Biofluids. Cheng Chun1, Xin Renlong2, Yang Leng2, Kwok Kwong Fung1 and Ning Wang1; 1Department of Physics and the Institute of Nano Science and Technology, the Hong Kong University of Science and Technology, HongKong, China; 2Department of Mechanical Engineering, the Hong Kong University of Science and Technology, HongKong, China.

D3.49
Electronic Structure and Optical Properties of Novel Fe1-xOsxSi2 Semiconducting Alloys. Yun Gao1, Quan Rong Deng1, Ru Shan Chen1, Yi Xue Xia1 and Guo Sheng Shao2; 1Faculty of physics and electronic technology, Hubei University, Wuhan, Hubei Province, China; 2Centre for Materials Research and Innovation, University of Bolton, Bolton, United Kingdom.

D3.50
Effects of Preparation Conditions on Optical Properties of Ga-doped ZnO Thin Films Deposited by RF Magnetron Sputtering. Fang Wu1, Liang Fang1, YingJun Pan2, GaoBin Liu1, QiuLiu Huang1 and LiPing Peng1; 1Applied Physics, ChongQing University, ChongQing, ChongQing, China; 2College of OptoElectronic Engineering, ChongQing University, ChongQing, ChongQing, China.

D3.51
Optical Properties of Nano Imprinted ZnO Thin Film and n-ZnO/ZnO/P-GaN LED Structure. MyoungWon Oh, Il-Soo Kim and Byung-Teak Lee; Department of Science and Engineering, Chonnam Nationnal University, Gawngju, South Korea.

D3.52
Highly Enhanced Light Output GaN-Based Light-Emitting Diodes Using Micro-hole Array and Photoelectrochemical Etching. Fang-I Lai1, Cheng-En Hsieh2 and Shou-Yi Kuo3; 1Department of Electrical Engineering, Yuan Ze University, Chung-Li, Taiwan; 2Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu, Taiwan; 3Department and Graduate Institute of Electronic Engineering, Chang Gung University, Tao-Yuan, Taiwan.

D3.53
Abstract Withdrawn

D3.54
Sb-doped p-type ZnO Epitaxial Films for Light Emitting Diodes. Jianlin Liu, S. Chu, L. Mandalapu, Jae-Hong Lim, Z. Yang and L. Li; Department of Electrical Engineering, University of California, Riverside, California.

D3.55
Study of GaAsSbN and GaSbN Dilute Nitride Materials Grown by MBE. Shanthi Iyer1, Kalyan Nunna1, Sudhakar Bharatan1, Jia Li1, Liangjin Wu1, Kevin Matney2, Xing Wei3, Tugrul Senger4 and Krishan Bajaj5; 1Electrical and Computer Engineering, North Carolina A&T State university, Greensboro, North Carolina; 2Bede Scientific Inc., Englewood, Colorado; 3NHMFL, Florida State University, Tallahassee, Florida; 4Department of Physics, Bilkent University, Ankara, Turkey; 5Department of Physics, Emory University, Atlanta, Georgia.

D3.56
Transferred to D11.7

D3.57
Doping Dependent Device Applications of SnO2 Nanowires. Qing Wan, Micro-Nano Technologies Research Center, Hunan University, Changsha, Hunan, China.

D3.58
Electronic Conductivity of Nanoparticles Stabilized by Metal-Carbon Covalent Bonds. Shaowei Chen and Debraj Ghosh; Department of Chemistry and Biochemistry, University of California, Santa Cruz, California.

D3.59
Large-sacel Synthesis of Micrometer-scale Single-crystal Gold Nanosheets by Polyol Process. Jinting Jiu1, Katsuaki Suganuma1, Keunsoo Kim1, Takashi Nemoto2, Tetsuya Ogawa2 and Seiji Isoda2; 1Institute of Scientific and Industrial Research,, Osaka University, Osaka, 567-0047, Japan; 2Institute for Chemical Research,, Kyoto University, Uji, Kyoto 611-0011, Japan.

D3.60
Dispersion Rheology of Carbon Nanotubes in a Polymer Matrix. Yan Yan Huang, Samit Ahir and Eugene Terentjev; Physics, University of Cambridge, Cambridge, United Kingdom.

D3.61
Metal-semiconductor Transition of B-doped Carbon Nanotubes. Sen-Hong Syue, Hsin-Fu Kuo, Ching-Tung Hsu, Hung-Jen Chen, Uei-Shin Chen, Wen-Kuang Hsu and Han-Chang Shih; Department of Materials Science and Engineering, National Tsing Hua University, HsinChu, Taiwan, HsinChu, Taiwan.

D3.62
Self-assembled SnO2 Film with Low Density. Hongjun Ji, Xiaoheng Liu and Xin Wang; Key Laboratory for Soft Chemistry and Functional Materials of Ministry of Education, Nanjing University of Science and Technology, Nanjing, Jiangsu, China.

D3.63
Synthesis and Characterization of Fluorine-doped Tin Oxide Nanopowders. Huaming Yang and Chengli Huo; Department of Inorganic Materials, Central South University, Changsha, China.

D3.64
Si Etching Catalyzed Patterned Metal Nanoparticles. Yong Wang, Martin Steinhart and Ulrich Goesele; Max Planck Institute of Microstructure Physics, Halle, Germany.

D3.65
Synthesis and Characterization of In2O3 Nanocube Via a Solvothermal-Annealing Route. Weibing Hu, Hubei Institute for Nationalities, Enshi, China; Huazhong University of Science and Technology, Wuhan, China.

D3.66
Synthesis and Electrical Properties of Polymer-based Composite Nanofibers. Yunze Long, College of Physics Science, Qingdao University, Qingdao, Shandong, China.

D3.67
Simulation of Interlayer Mass Transport in Pd/Cu(100) Heteroepitaxy by Pulse Laser Deposition. Fengmin Wu1 and Juanmei Hu2; 1Institute of Condensed Matter Physics, Jinhua, China; 2Department of Physics, Institute of Condensed Matter Physics, Jinhua, China.

D3.68
The Kinetics and Mechanistic Understanding of Silicon Nanowire Growth. Dunwei Wang, Huaizhou Zhao and Sa Zhou; Chemistry, Bostno College, Chestnut Hill, Massachusetts.

D3.69
Silicon Nanowires Coated with Nickel Film. Yangwen Chen, Suhua Jiang, Libei Liu, Bingxian Shao, Wei Wang, Ruifen Rong, Zhiguang Gu and Rongchang Wang; Materials Science, Fudan University, Shanghai, Shanghai City, China.

D3.70
Synthesis of Platinum Nanoparticle-carbon Nanotube Composites and their Electrocatalytic Properties for Hydrogen Peroxide Detection. Jing Zhang1, Lian Gao1, Jing Sun1 and Hisashi Kajiura2; 1State Key Lab of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, China; 2Materials Laboratories, Sony Corporation, Kanagawa, Japan.

D3.71
Preparation and Characterization of silica Nano-rods. Guang Zhu and Xiao ping Zou; Beijing Information Technology Institute, Beijing, Beijing, China.

D3.72
Polyaniline Nanotubers Oxidized by Ammonium Peroxydisulfate Without using Either Template or Dopant. Wan Meixiang, Institute of Chemistry, Chinese Academy of Sciences, Beijing, China.

D3.73
Piezoelectric Polymer Nanowires by Wetting of Porous Template. Xunda Feng, Zhaoxia Jin, Qichao Zhao and Xia Long; Department of Chemistry, Renmin University of China, Beijing, China.

D3.74
Self- Catalyzed Growth of Silica Nanowires. Guang Zhu and Xiao ping Zou; Beijing Information Technology Institute, Beijing, Beijing, China.

D3.75
Study of Conduction Properties of Diamond Surface Doped with (B+H) Complexes. Cuixia Yan1,2, Ying Dai1, Baibiao Huang1, Ruiqin Zhang3 and Wenjun Zhang3; 1School of Physics and Microelectronics, State Key Laboratory of Crystal Materials, shandong university, Jinan, shandong, China; 2Department of Physics, Jining University, Qufu, shandong, China; 3Center of Super-Diamond & Advanced Films (COSDAF) and Department of Physics & Materials Science, City University of Hong Kong, Hong Kong, China.

D3.76
Kinetic Monte Carlo Simulation of the Affection Induced by the Dislocation to the Quantum Dot Growth. Chang Zhao and Man Zhao; Beijing institute of Petrochemical and Technology, Beijing, China.

D3.77
New Approach to Vary the Density and the Size Distribution of Nanocrystalites Embedded in a Dielectric Matrix. Irina V. Antonova1, Vladimir A. Skuratov2, Mitrofan Gulyaev1, Jedrzej Jedrzejewski3 and Isaac Balberg3; 1Siberian Division of the Russian Academy of Sciences, Institute of Semiconductor Physics, Novosibirsk, Russian Federation; 2Joint Institute for Nuclear Research, Dubna, Russian Federation; 3The Hebrew University, The Racah Institute of Physics, Jerusalem, Israel.

D3.78
One Step Synthesis Route of GaN 1_D Nanomaterials and α-Si3N4 Nanowires. Mashkoor Ahmad, Jiong Zhao, Fan Zhang, Caofeng Pan and Jing Zhu; Material science & Engineering, Tsinghua University, Beijing, China.

D3.79
Greener Chemical Routes to Monodisperse Selenides Quantum Dots. Chun Wang1, Yang Jiang1, Guohua Li1 and Zhongping Zhang2; 1School of Materials Science and Engineering, Hefei University of Technology, Hefei, China; 2Department of Chemistry, Chaohu Insititute, Chaohu, Anhui, China.

D3.80
Rapid Electrodeposition of Vertically Aligned ZnO Nanowires Array without ZnO Seed Layer via a Simple Aqueous Solution Route. Xu Feng, Lu Yinong, Xie Yan and Liu Yunfei; State Key Laboratory of Materials-Oriented Chemical Engineering, College of Materials Science and Engineering, Nanjing University of Technology, Nanjing, Jiangsu, China.

D3.81
In-Plane Growth of VO2 Nanowires and Direct Observation of the Metal-Insulator Phase Transition by HRTEM. Yao Cheng1,2, Tailun Wong1 and Ning Wang1,2; 1Physics, Hongkong University of Science & Technology, HongKong, China; 2Institute of Nano Science and Technology, Hong Kong University of Science & Technology, HongKong, China.

D3.82
Structure and Optical Properties of Periodically Ordered ZnO Nanowire Arrays. Jingbiao Cui, University of Arkansas at little Rock, Little Rock, Arkansas.

D3.83
A Nanotransistor with an Influence of the Electron-phonon Interaction. Karel Kral, Institute of Physics, ASCR, v.v.i., Prague 8, Czech Republic.

D3.84
Formation of Self-assembly FeSi2 Nanowires on Si (100) by Ion Beam Synthesis. Yun Gao1,3, Ru Shan Chen1,3, Guo Sheng Shao2 and Quan Li3; 1Faculty of physics and electronic technology, Hubei University, Wuhan, Hubei Province, China; 2Physics Department, The Chinese University of Hong Kong, Hong Kong, China; 3Centre for Materials Research and Innovation, University of Bolton, Bolton, United Kingdom.

D3.85
Low-temperature Synthesis of Carbon Nanofibers: a Catalyst Derived from Cupric Carbonate Basic During Acetylene Decomposition. Liyan Yu, Lina Sui and Zuolin Cui; College of Materials Science and Engineering, Qingdao University of Science & Technology, Qingdao, China.

D3.86
Single Crystalline Ferromagnetic Fe1-xCoxSi Nanowires. Juneho In1, Kumar S. K. Varadwaj1, Kwanyong Seo1, Sunghun Lee1, Yoon Hana1, Younghun Jo2, Myung-Hwa Jung2, Jinhee Kim3 and Bongsoo Kim1; 1Chemistry, KAIST, Daejeon, South Korea; 2Quantum Material Research Team, KBSI, Daejeon, South Korea; 3Leading-Edge Technology Group, KRISS, Daejeon, South Korea.

D3.87
Effect of the Non-ideal Clamp Condition on the Measurement of Young’s Modulus of Nanowires. Zeng Dujuan and Zheng Quanshui; Department of engineering mechanics, Tsinghua University, Beijing, China.

D3.88
Simple Synthesis of Ordered Mesoporous SnO2 and Application in Gas Sensors. Jiaqiang Xu, Ding Wang, Xiaowen Dong and Qingyi Pan; Department of Chemistry, Shanghai University, Shanghai, Shanghai, China.

D3.89
Influence of ZnO Coating on the Photoluminescence Properties of SnO2 Nanobelts. Chongmu Lee, Hohyeong Kim and Chanseok Hong; Materials Science and Engineering, Inha university, Incheon, South Korea.

D3.90
Enhance the Turn-On Properties of Carbon Nanotubes Thin Film Transistors by the Ar Plasma Treatment. Tsung-Hsun Yang and Jeng-Hua Wei; Ching Yun University, Jung-Li, Taiwan.

D3.91
Diamond Film Ultraviolet Detectors with Different Diamond Grain Size. Ke Tang, Linjun Wang, Jian Huang, Run Xu, Jianming Lai, Yulan Guan, Weimin Shi and Yiben Xia; School of Materials Science and Engineering, Shanghai University, Shanghai 200072, China.

D3.92
The Influence of the Monodisperse Distance and Sizes of Nanocrystallites during Depositing Diamond Films in HFCVD. Xiao Long You and Zhi Ming Yu; School of Materials Science and Engineering, Central South University, Changsha, Hunan, China.

D3.93
Deposition of ZnO Thin Film on Freestanding Diamond Structure with a ZnO Homo-buffer Layer. Ke Tang, Linjun Wang, Jian Huang, Run Xu, Jianming Lai, Yulan Guan, Weimin Shi and Yiben Xia; School of Materials Science and Engineering, Shanghai University, Shanghai 200072, China.

D3.94
Growth Mechanism of Y-shaped Carbon Nanofibers Obtained from Ethanol Flames. Jin Cheng1,2 and Xiaoping Zou1; 1Research Center for Sensor Technology, Beijing Information Technology Institute, Beijing, China; 2School of Electronic Engineering, Beijing University of Posts and Telecommunications, Beijing, China.

D3.95
Non-stoichiometric Branch-like ZnOx Nanostructures. Jianping Sun1 and Chun Hui2; 1Institute of electronics, North china electric power university, Beijing, China; 2Institute of Micro and Nano science and technology, Shanghai Jiaotong University, Beijing, China.

D3.96
Germanium Nanoparticles and Nanowires shearhed with Silica. Zhang Mingang1,2, Meng Guowen1 and Zhang Lide1; 1Key Laboratory of Materials Physics, Institute of Solid State Physics, HeFei, Anhui, China; 2College of Mater Sci & Eng, Taiyuan Univ of Sci & Tech, Taiyuan, Shanxi, China.

D3.97
The Influence of Annealing on Mechanical Properties of Hydrogenated Nanocrystalline Silicon Thin Films. Hongyong Peng, Jinliang Wang, Li Wang and Bo Zhou; Department of Physics,School of Science, Beihang University, Beijing, China.

D3.98
Nano-layered Shell for “nano-electronics” Radiation Shielding. Liviu Popa-Simil, LAVM LLC, Los Alamos, New Mexico.

D3.99
Nanocrystalline TiO2 Films Deposited via Rapid Expansion Supercritical Solution for Dye-sensitized Solar Cells. Huang Wen Yao, Hsieh Dung Li, Lee Chun Che and Fang Chia Tsung; Institute of Electro-Optical Engineering, National Sun Yat-sen University (NSYSU), Kaohsiung, Taiwan.

D3.100
Application of Ordered Nano-TiO2 Thin Films to Dye-sensitized Solar Cells by Anodization Method. Huang Wen Yao, Lee Chun Che, Hsieh Dung Li and Fang Chia Tsung; Institute of Electro-Optical Engineering, National Sun Yat-sen University (NSYSU), Kaohsiung, Taiwan.

D3.101
The Nanostructural, Optical, and Electrical Features of nc-Si Thin films Prepared by Al-Induced Crystallization. Jae-Hyun Shim and Nam-Hee Cho; Materials Sci. and Eng., Inha Univ., Inchon, South Korea.

D3.102
Charge Injection at Carbon Nanotube-Dielectric Interface. Hock Guan Ong, Lain Jong Li and Junling Wang; Materials Science and Engineering, Nanyang Technological University, Singapore, Singapore.

D3.103
Abstract Withdrawn

D3.104
Characterization from Rutile-structured SnO2 NWs Synthesized by Thermal Evaporation System. Sang-Hun Nam, SeongHun Jeong, Myoung Hwa Kim, Soon-Bo Lee and Jin-Hyo Boo; Chemistry, Sungkyunkwan University, Suwon, South Korea.

D3.105
Abstract Withdrawn

D3.106
Abstract Withdrawn

D3.107
Growth of High-aspect-ratio Epitaxial NiSi2 Nanowires with Low Resistivities. Sheng-Yu Chen, Wen-Wei Wu, Bing-Hong Yeh and Lih-Juann Chen; Department of Materials Science and Engineering, National Tsing Hua University, HsinChu, Taiwan.

D3.108
The Role of Geometrical Constraint in the Electronic Properties of Low-dimensional Carbons. Vincent Crespi1, Dragan Stojkovic1, Paul Lammert1, Cristiano Nisoli1 and Roxana Margine2; 1Penn State, University Park, Pennsylvania; 2University Claude Bernard, Lyon, France.

D3.109
P-type CuO Nanowire Array for Highly Sensitive Gas Sensor. Jiajun Chen, Kai Wang and Weilie Zhou; Advanced Materials Research Institute, Univ. of New Orleans, New Orleans, Louisiana.

D3.110
ZnO Nanowires Grown on Cone-shaped Zinc Nanostructures by Thermal Oxidation. Liang-Chiun Chao, Chung-Chi Liau and Jun-Wei Lee; Electronic Engineering, National Taiwan University of Science and Technology, Taipei, Taiwan.

D3.111
Fabrication and Electric Characterization of the n-ZnO/ p-Nanocrystalline Diamond Film Heterojunction. Jian Huang, Linjun Wang, Run Xu, Ke Tang, Jianmin Lai and Yiben Xia; School of Materials Science and Engineering, shanghai university, Shanghai 200072, China.

D3.112
Low Temperature Synthesis of SiCN Nanostructures. Wenjuan Cheng and Xueming Ma; State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai, China.

D3.113
Recognition of Chiral Vector Angle of Single Walled Nanotubes by Image Processing Techniques. Maofa Wang, Research Center for Sensor Technology, Beijing Information Technology, Beijing, China.

D3.114
Silicon Nanowires for High Performance Rechargeable Lithium-ion Battery Negative Electrodes. Kuiqing Peng1 and ShuitTong Lee2; 1Department of Materials Science and Engineering, The Institute of Low Energy Nuclear Physics, Beijing Radiation Center, Beijing Academy of Science and Technology, Beijing Normal University, Beijing, China; 2Department of Physics and Materials Science, Center of Super-Diamond and Advanced Films (COSDAF), City University of HongKong, HongKong, China.

D3.115
Growth and Properties of ZnO/ZnS Core/shell Nanorods. Yinshu Wang1, Qihua Guo1, Sanjing Lin1 and Dong Zheng2; 1Department of Physics, Beijing Normal University, Beijing, China; 2Analytical and Testing Center, Beijing Normal University, Beijing, China.

D3.116
The Behavior of Ionized Gas Adsorbs and Desorbs on SWNTs. Ching-Tung Hsu, Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan.

D3.117
Rapidly Hydrophilic Carbon Nanotube through EUV Irradiation. Yi Fan Li, Department of Materials Science and Engineerin, National Tsing Hua University, Hsinchu,, Taiwan.

D3.118
Effect of Citric Acid to Carbon Nanotube Growth. Jiang Qi, Zou Yongliang, Song Lijun, Du Bing, Zhao Xiaofeng and Zhao Yong; Key Laboratory of Advanced Technologies of Materials (Ministry of Education of China) and Superconductivity R&D Center,Southwest Jiaotong University, Chengdu, China.

D3.119
Synthesis of Straight Y-shaped SiO2 Nanorods. Guang Zhu and Xiao ping Zou; Beijing Information Technology Institute, Beijing, Beijing, China.

D3.120
Assembly of Magnetic Cobalt Nanowires Modulated by Palladium Nanoparticles on DNA Molecules. Qun Gu, Pacific Nanotechnology, Santa Clara, California.

D3.121
In situ TEM Investigation of Electron Irradiation Induced Crystallization Process of a New Phase-change Material SixSb100-x. Xiaofang Huang1, Yan Cheng1, Xiaodong Han1, Ze Zhang1, Ting Zhang2, Zhitang Song2, Bo Liu2 and Songlin Feng2; 1Institute of Microstructure and Property of Advanced Materials, Beijng University of Techology, Beijing, China; 2Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai, China.

D3.122
Abstract Withdrawn

D3.123
Abstract Withdrawn

D3.124
Field-induced Stiffening of Carbon Nanotube Bundles. Uei-Shin Chen1, Sen-Hong Syue1, Hung-Jen Chen1, Wen-Kuang Hsu1, Shih-Chin Chang1 and Han C. Shih2,1; 1Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan; 2Institute of Materials Science and Nanotechnology, Chinese Culture University, Taipei, Taiwan.

SESSION D4
Tuesday Morning, June 10, 2008
Auditorium
Session Chairs: Yutong Wu

8:00 AM D4.1
Nonvolatile Resistive Mmemory Switching in Cu Doped ZrO2. Weihua Guan, Shibing Long, Qi Liu, Qin Wang, Yuan Hu and Ming Liu; Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China.

8:15 AM D4.2
Abstract Withdrawn

8:30 AM D4.3
Mask-free Nanoscale Characterizations of Chalcogenide Stacked Layers for Potential Phase-change Memory Applications. Feiming Bai1, Surendra Gupta2 and Santosh Kurinec1; 1Microelectronic Engineering, Rochester Institute of Technology, Rochester, New York; 2Mechanical Engineering, Rochester Institute of Technology, Rochester, New York.

8:45 AM D4.4
Resistive Switching: Materials, Mechanisms and Memory Devices. Zhiguo Liu, National Laboratory of Solid State Microstructures, Nanjing University, Nanjing, China; Dept. of Materials Science and Engineering, Nanjing University, Nanjing, China.

9:15 AM D4.5
Asymmetric Tunneling Oxide for Nanocrystal Memory Application. Ke_Chih Liu, Yun-Shan Lo, Chun-Yi Wu, Cheng-Hao Hou and Tai_Bor Wu; Materials Science Engineering, National Tsing Hua University, Taiwan (R.O.C), Hsin_Chu, Taiwan.

9:30 AM D4.6
Synthesis and Characterization of Phase Transition Memory Devices with Extra-thin Ge2Sb2Te5 Layer. Ke Wang1, Cheng Xu2, Xiaodong Han1, Bo Liu2 and Ze Zhang1; 1Institute of Microstructure and Property of Advanced Materials, Beijing University of Technology, beijing, China; 2Institute of Microstructure and Property of Advanced Materials, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, shanghai, China.

9:45 AM D4.7
Investigation of Heat Induced Phase Change in Si2Sb2Te5 Material. Yan Cheng1, Xiaodong Han1, Ze Zhang1, Ting Zhang2, Zhitang Song2, Bo Liu2 and Songlin Feng2; 1Institute of Microstructure and Property of Advanced Materials, Beijing University of Technology, beijing, China; 2Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai, China.

10:00 AM D4.8
Memory Properties of a Ge Quantum Dots MOS Device Fabricated by Pulsed Laser Deposition. Xiying Ma, Institute of Optoelectronic Materials, Shaoxing University, Shaoxing, Zhejiang, China.

10:15 AM BREAK

10:45 AM *D4.9
Liquid Structure of Phase-change Materials for Rewritable Data Storage. Zhimei Sun1, Jian Zhou1, Andreas Blomqvist2 and Rajeev Ahuja2; 1Department of Materials Science and Engineering, Xiamen University, Xiamen, China; 2Department of Physics and Materials Science, Uppsala University, Uppsala, Sweden.

11:15 AM D4.10
Inducing Effect of Pb(Zr0.4Ti0.6)O3 Thin Films Derived by Different Processes in BiFeO3/Pb(Zr0.4Ti0.6)O3 Multilayer Capacitors. Dan Xie1, Yongyuan Zang1, Tianling Ren1, Litian Liu1 and Zhimin Dang2; 1Institute of Microelectronics, Tsinghua University, Beijing, China; 2Key Laboratory of Beijing City for Preparation and Processing of Novel Polymer Materials & Ministry of Education Key Laboratory for Nanomaterials,Beijing University of Chemical Technology, Beijing, China.

11:30 AM D4.11
Abstract Withdrawn

11:45 AM D4.12
Improvement in Ferroelectric Properties of BiFeO3/Bi3.15Nd0.85Ti3O12 Multilayer Capacitor with YBa2Cu3O7 as a Conductive Buffer Layer for the Application in FeRAM. Yongyuan Zang1, Dan Xie1, Tianling Ren1, Litian Liu1 and Zhimin Dang2; 1Tsinghua National Laboratory for Information Science and Technology (TNList), Institute of Microelectronics, Tsinghua Univeristy, Beijing, China; 2Key Laboratory of Beijing City for Preparation and Processing of Novel Polymer Materials & Ministry of Education Key Laboratory for Nanomaterials, Beijing University of Chemical Technology, Beijing, China.

SESSION D5
Tuesday Afternoon, June 10, 2008
Auditorium
Session Chairs: Yasufumi Fujiwara and G. Ramanath

1:30 PM D5.1
ZnO as High-k Dielectric for Organic Thin Film Transistor-Based Non Volatile Memory. Noviana Tjitra Salim1, Kean C Aw2, Wei Gao1 and Zheng Wei Li1; 1Chemical and Materialsl Engineering, The University of Auckland, Auckland, New Zealand; 2Mechanical Engineering, The University of Auckland, Auckland, New Zealand.

1:45 PM D5.2
CuPc Thin Film Transistor Memory Using Gold Nanocrystals Embedded in Polyimide Gate Dielectric. Lijuan Zhen, Weihua Guan, Liwei Shang, Ming Liu and Ge Liu; Laboratory of Nano-fabrication and Novel Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China.

2:00 PM D5.3
Abstract Withdrawn

2:15 PM D5.4
Spin- and Time-Resolved Two Photon Photoemission Study of Spin Injection from Inorganic to Organic Semiconductor. Yongli Gao1, Huanjun Ding1, Mirko Cinchetti2, Oleksie Andreyev2 and Martin Aeschlimann2; 1University of Rochester, Rochester, New York; 2University of Kaiserslautern, Kaiserslautern, Germany.

2:30 PM D5.5
Abstract Withdrawn

2:45 PM D5.6
Synthesis and Photoluminescence of Well-aligned ZnO Nanotube Arrays by a Simple Chemical Solution Route. Yuewen Wang and Zuolin Cui; Qingdao University of Science and Technology, Qingdao, Shandong, China.

3:00 PM D5.7
Nanofabrication of Self-Assembled Monolayers Terminated with Desired Functionalities for Metal Deposition. Jing-jiang Yu, Nanotechnology Measurements Division, Agilent Technologies, Inc., Chandler, Arizona.

3:15 PM BREAK

3:45 PM *D5.8
Evolution of Wetting Layer in InAs/GaAs Quantum-dot System. Yonghai Chen, Key Lab of Semiconductor Materials Science, Institute of Semiconductors, CAS, Beijing, China.

4:15 PM *D5.9
Abstract Withdrawn

4:45 PM D5.10
Synthesis of Cu2O Nanowires via Hydrothermal Reduction Process in Reverse Microemulsions. Xiaojuan Zhang and Zuolin Cui; Qingdao University of Science and Technology, Qingdao, Shandong, China.

5:00 PM D5.11
HRTEM and EELS Characterisation of Au-Cu2O Core-shell Nanocube Heterostructures. Yiqian Wang2,1, David W. McComb1 and Kirill Nikitin2; 1Materials, Imperial College London, London, United Kingdom; 2School of Chemistry and Chemical Biology, University College Dublin, Dublin, Ireland.

5:15 PM D5.12
Formation of ZnO Hollow Microspheres Consisting of ZnO Nanorods by Self-Assembled Block Copolymer. Junchao Tao, Xin Chen and Ning Dai; National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China.

SESSION D6
Wednesday Morning, June 11, 2008
Auditorium
Session Chairs:  Seiji Samukawa and Armando Rastelli

8:00 AM D6.1
Passivation of Defects at the SiC-SiO2 Interface for High-Temperature and High-Power Microelectronics: the Effects of Nitrogen and Hydrogen. Sanwu Wang1, A. Ahyi2, H. Dang1, S. Dhar3, S. Dixit3, L. Feldman4, A. Franceschetti5, S. Pantelides3, F. Roberts1, J. Rozen3, S. Wang2 and J. Williams2; 1Department of Physics and Engineering Physics, The University of Tulsa, Tulsa, Oklahoma; 2Department of Physics, Auburn University, Auburn, Alabama; 3Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee; 4Rutgers University, Piscataway, New Jersey; 5National Renewable Energy Laboratory, Golden, Colorado.

8:15 AM D6.2
A New Three-terminal Hot-electron Spectroscopy for Band Gap Measurement of III-V Semiconductor Compounds. Wei Yi1, Venkatesh Narayanamurti1, Hong Lu2, Mike Scarpulla2, Arthur C. Gossard2, Yong Huang3, Jae-Hyun Ryou3 and Russell D. Dupuis3; 1School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts; 2Materials Department, University of California, Santa Barbara, California; 3School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia.

8:30 AM D6.3
One Dimensional Disordered Structure of SiC Nanowires. Kun Zheng1, Xiaodong Han1, Yuefei Zhang1, Ze Zhang1, Yajuan Hao2 and Xiangyun Guo2; 1Institute of Microstructure and Property of Advanced Materials, Beijing University of Technology, Beijing, China; 2State Key Laboratory of Coal Conversion, Institute of Coal Chemistry, Chinese Academy of Sciences, Taiyuan, China.

8:45 AM D6.4
Monothically Integrated GaAs and Si based Long-Wavelength Tunable Photodetector. Huang Hui1, Qu Bo2, Ren Xiaomin1 and Huang Yongqing1; 1Beijing University of Post and Telecommunications, Beijing, China; 2Bede Scientific Instrument Ltd., Durham, United Kingdom.

9:00 AM *D6.5
Abstract Withdrawn

9:30 AM D6.6
GaAs epitaxy on CMPed Ge/Si by Selective Aspect Ratio Trapping. Jizhong Li1, Jie Bai1, Jennifer Hydrick1, Ji-Soo Park1, Mark Carroll1, Anthony Lochtefeld,1 and Zane Shellenbarger2; 1Research Department, Amberwave Systems Corp., Salem, New Hampshire; 2Sarnoff Corporation, Princeton, New Jersey.

10:00 AM D6.7
Self-catalyzed Growth of Defect-free Indium Phosphide Nanowires on Silicon. Robyn L Woo1, Yoji Kobayashi2, Li Gao1, Tom Mallouk2 and Robert F Hicks1; 1Chemical Engineering, UCLA, Los Angeles, California; 2Chemistry, Penn State University, University Park, Pennsylvania.

10:15 AM BREAK

10:45 AM D6.8
Transferred to D8.136

11:00 AM D6.9
Development of Piezoresistive GaAs/AlAs Micro-accelerometer. Lijun Tang1, Guowen Liu1,2 and Jie Hu1,2; 1National Key Laboratory for Electronic Measurement Technology, North University of China, Taiyuan, Shanxi, China; 2Key Lab on Instrumentation Science & Dynamic Measurement of the Ministry Education, North University of China, Taiyuan, Shanxi, China.

11:15 AM D6.10
MBE Growth and Characterization of Uniformly Abrupt GaP/Si Interfaces and High Quality GaP Layers on Si. Steven Ringel, Mark Brenner, Jeongho Park and Tyler Grassman; Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio.

11:30 AM D6.11
Theoretical Study of Composition Fluctuation in InGaN Films on Various Substrates. Kiichiro Mukose and Masatoshi Sano; Faculty of Engr, Tokyo University of Science, Tokyo, Japan.

11:45 AM D6.12
Photoswitching Effects from Bulky Materials to a Single Molecule. Xuefeng Guo1 and Colin Nuckolls2; 1College of Chemistry, Peking University, Beijing, China; 2Department of Chemistry, Columbia University, New York, New York.

SESSION D7
Wednesday Afternoon, June 11, 2008
Auditorium
Session Chair: Kohei Itoh

1:30 PM *D7.1
Silicon Nanoelectronics. Toshiro Hiramoto, Institute of Industrial Science, University of Tokyo, Tokyo, Japan.

2:00 PM *D7.2
Molecular Beam Epitaxial Growth of type-II GaSb/GaAs Quantum Dot and Quantum Rod. Chao Jiang, National Center for Nanoscience and Technology, Beijing, China.

2:30 PM *D7.3
High-power Operation of Strain-compensated InGaAs/InAlAs Quantum-cascade Lasers at Room Temperature. Feng-Qi Liu and Zhanguo Wang; Insritute of Semiconductors, CAS, Beijing, China.

3:00 PM *D7.4
Quantum Properties Revealed by Precise Control of Atomic Configuration in Rare-earth Doped Semiconductors. Yasufumi Fujiwara, Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, Suita, Osaka, Japan.

3:30 PM BREAK

3:45 PM *D7.5
Chemistry-Directed Synthesis And Assembly Of Functional Nanostructures For Novel Device Properties And Applications. G. Ramanath, Materials Science and Engineering, Rennsselaer Polytechnic Institute, Troy, New York.

4:15 PM *D7.6
Scalable Quantum Dot Systems: Current Challenges. Armando Rastelli, Institute for Integrative Nanosciences, IFW Dresden, Dresden, Germany.

4:45 PM D7.7
Dispersion of Elementary Excitations in Carbon Nanotubes, Graphene Sheets and Graphite Crystals. Viktor Olexandrovych Gubanov, Larysa Komarova, Mykola Biliy, Sergiy Kovrygin, Ludmyla Matzui and Yevgen Mel’nychuk; Physics, Kyiv National Taras Shevchenko University, Kyiv, Ukraine.

5:00 PM D7.8
Broadband Quantum Dot Superluminescent LED Formed by Focus Ion Beam Post-modification. Ziyang Zhang, Qi Jiang, Luxmoore Issac, Huiyun Liu and Richard Hogg; University of Sheffield, Sheffield, United Kingdom.

5:15 PM D7.9
A New Method to Controllably Fabricate Nanogap Electrodes. Dacheng Wei, Yunqi Liu, Lingchao Cao, Yu Wang and Gui Yu; Institute of Chemistry, Chinese Academy of Sciences, Beijing, China.

SESSION D8: Poster Session II
Wednesday Evening, June 11, 2008
8:00 PM
Exhibition Hall


D8.1
Microwave Absorbing Properties of Polyaniline-Barium Ferrite Nanocomposite. Yuanxun Li, Huaiwu Zhang, Yingli Liu, Jie Zha and Weiwei Ling; State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan, China.

D8.2
Dielectric Properties of Ba6-3xLa8+2x(Ti1-zZrz)18O54(x=0.5) Microwave Dielectric Ceramics. Wang Meina1 and Qiu Tai2; 1Nanjing University of Technology, Nanjing, Jiang Su, China; 2Nanjing University of Technology, Nanjing, Jiang Su, China.

D8.3
Reactively Sputtered Ti-Si-N films for Application to Heating Layer in Low-current Phase-change Memory. You Yin1, Naoya Higano2, Tomoyuki Noguchi3, Kazuhiro Ota1, Hayato Sone1 and Sumio Hosaka1; 1Department of Production Science and Technology, Gunma University, Kiryu, Gunma, Japan; 2Department of Nano-Material Systems, Gunma University, Kiryu, Gunma, Japan; 3Department of Electronic Engineering, Gunma University, Kiryu, Gunma, Japan.

D8.4
Research on GaSbBi Phase-Change Disc Recording Media. Degui Zhu and Shuangquan Guo; Key Laboratory of Advanced Technologies of Materials, Ministry of Education, Southwest Jiaotong University, Chengdu, Sichuan, China.

D8.5
Preparing VO2 Thin Film by Inorganic Sol-Gel Method. Ge Zhenhua, Zhao Kunyu, Li Zhidong and Duan Yunbiao; Department of Materials Science and Engineering, Kunming University of Science and Technology, Kunming, Yunnan, China.

D8.6
TEM Study of Cation Ordering in Ca[(Mg1/3Ta2/3)1-xTix]O3 Microwave Dielectric Ceramics. Fu Maosen and Chen Xiangming; Laboratory of Dielectric Materials, Department of Material Science and Engineering,, Zhejiang University, Hangzhou, Zhejiang, China.

D8.7
Relaxor Ferroelectric Behaviors and Their Compositional Dependence of (BaxSr1-x)4Nd2Ti4Nb6O30 Ceramics. Xiaoli Zhu and Xiangming Chen; material science and engineering, laboratory of dielectric materials, Hangzhou, Zhejiang, China.

D8.8
Microstructure and Dielectric Properties of Sol-gel Derived BaTiO3/Ba0.8Sr0.2TiO3 Multilayered Thin Films. Jun Wang1,2, Junhuai Xiang1 and Tianjin Zhang2; 1Jiangxi Key laboratory of Surface Engineering, Jiangxi Science and Technology Normal University, Nanchang, China; 2Department of Material Science and Engineering, Hubei University, Wuhan, China.

D8.9
Effects of PbO and SrO Contents on Crystallization and Dielectric Properties of PbO-SrO-Na2O-Nb2O5-SiO2 Glass-ceramics System. Liu Wei, Mao Changhui, Dong Guixia and Du Jun; advanced electronic materials research institute, general research institute for nonferrous metals, Beijing, China.

D8.10
Single-layered Organic Cross-Point Bistable Devices: the Formation and the Effect of the Interfacial SnOx Nanoparticles. Yun Li1, Yi Shi1, Yedan Sun1, Danfeng Qiu1, Jianmin Zhu1, Lijia Pan1, Lin Pu1 and Henning Sirringhaus2; 1National Laboratory of Solid State Microstructure and Department of Physics, Nanjing University, Nanjing, Jiangsu, China; 2Cavendish Laboratory, Univeristy of Cambridge, Cambridge, United Kingdom.

D8.11
Self-assembly Growth and Size Control of Copper Nanocrystals for Nonvolatile Memory Applications. Li Wang, Hongfang Sun, Huihua Zhou and Jing Zhu; Beijing National Center for Electron Microscopy, Beijing, China.

D8.12
Synthesis and Electrical Characterization of a MOS Memory Containing Si Nanoparticles Embedded in High-k HfO2 Thin Film. Lei Wang, Mei Ji, Shiwei Zhu, Hailing Tu and Jun Du; Advanced Electronic Materials Institute, General Research Institute for Nonferrous Metals, Beijing, China.

D8.13
Nitrogen Role of N doped GeTe Thin Film on the Structural Phase Transition. Min-Cherl Jung1, Hyun Joon Shin1, Kihong Kim2, Jin Ce Park2 and Se Ahn Song2; 1Beamline Division, Pohang Accelerator Lab., Pohang, South Korea; 2AE Center, Samsung Advanced Institute of Technology, Yongin, South Korea.

D8.14
Homoepitaxial Contacts to High Resistivity ZnO. Boyuan Chen1,2, ZhiZhan Chen1, Wei Huang1,2 and Xi Liu1,2; 1ShangHai Institute of Science and Technology, ShangHai, China; 2Graduated University, Chinese Academic of Sciences, BeiJing, China.

D8.15
MOCVD of Chalcogenide Films for Phase Change Memory Applications. Gary S. Tompa1, E. Coleman1, L. G. Provost1, D. Wang2 and P. Eng2; 1Structured Materials Industries, Inc., Piscataway, New Jersey; 2Start Sciences, Beijing, China.

D8.16
Influence of Etching on Electric Properties of BST Thin Films. Baishun Zhang and Tianjin Zhang; Faculty of Materils Science & Engeering, Hubei University, Wuhan, Hubei, China.

D8.17
Resistive Switching and Diode-like Characteristics of ZnO Thin Films for Nonvolatile Memory Applications. Wen-Yuan Chang, Yen-Chao Lai, Hung-Jen Chen and Tai-Bor Wu; Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan.

D8.18
Bipolar Resistance Switching Characteristics in ZnO Thin Films for Nonvolatile Memory Applications. Jui-Ming Tsai, Wen-Yuan Chang, Kai-Jung Cheng and Tai-Bor Wu; Material Science and Engineering, National Tsing Hua University, Taiwan(R.O.C), Hsinchu, Taiwan.

D8.19
Study on the TiO2-Pt Nanocomposite Thin Films for Resistance Random Access Memory Applications. Kai-Jung Cheng, Wen-Yuan Chang, Jui-Ming Tsai and Tai-Bor Wu; Department of Materials Science and Engineering, National Tsing Hua University, Taiwan (R.O.C.), Hsinchu, Taiwan.

D8.20
Novel Preferred Orientation in SrBi2Ta2O9 Thin Films Synthesized by a Sol-gel Method. Ke Hua, Harbin Institute of Technology, Harbin, China.

D8.21
In-situ TEM Investigations for Microstructural Correlations during Resistive Switching in Pt/TiO2/Pt Thin Film Stack - A Candidate for a Future ReRAM. Herbert Schroeder and Jun Miao; IFF-IEM and CNI, Forschungszentrum Juelich, Juelich, Germany.

D8.22
Structrual and Multiferroic properties of (1-x) (Bi0.8La0.2)FeO3 - xPbTiO3 Ceramics. Jianguo Chen, Jinrong Cheng, Yufa Qi, ShengWen Yu and Zhongyan Meng; Shanghai University, Shanghai, China.

D8.23
Piezoelectric and Ferroelectric Properties of (1-x)(Bi0.94La0.06)(Ga0.05Fe0.95)O3-xPbTiO3 Ceramics for High Temperature Applications. Yufa Qi, Jinrong Cheng, Jianguo Chen, Shengwen Yu and Zhongyan Meng; Shanghai University, Shanghai, China.

D8.24
Abstract Withdrawn

D8.25
Growth and Properties of Self-Assembled Monolayers on Metals. Yan-Xin Zhuang2,1 and Ole Hansen1; 1CINF, MIC-department of Micro and Nanotechnology, Technical University of Denmark, Kgs. Lyngby, Denmark; 2Key Laboratory of National Education Ministry for Electromagnetic Processing of Materials, Northeastern University, Shenyang, LiaoNing, China.

D8.26
Cross Conductance of Pyrene Molecular Bridge Cross Conductance of Pyrene Molecular Bridge and Quantum Current Distribution Inside It. Wang Li-guang, Science, Jiangnan University, Wuxi, Jiangsu, China.

D8.27
Abstract Withdrawn

D8.28
Control of Charge Injection, Trapping and Blocking Behaviors in Polymeric Light-emitting Diodes and Transistors using Metal Oxide Films and Self-assemble Materials. H. H. Fong, Chung-han Wu and George Malliaras; Materials Science and Engineering, Cornell University, Ithaca, New York.

D8.29
Preparation and Characterization of Pentacene Field Effect Transistors on SiO2 and High-K Gate Insulator. Qi Qiong1,2, Yu Ai Fang1 and Jiang Chao1; 1National Center for Nanoscience and Technology, China, Beijing, China; 2Graduate School of Chinese Academic of Sciences, Beijing, China.

D8.30
Modification of the Electronic Structure of Organic Semiconductor by Alkali Metal. Yongli Gao, Huanjun Ding and Kiwan Park; University of Rochester, Rochester, New York.

D8.31
Organic Semiconductors: Molecular Design and Solid State Structures. Phuong-T. T. Pham2, Faleh Al Tal3, Mariam Ali Al-Madeed3 and Mamoun M Bader1; 1Chemistry, Pennsylvania State University, Hazleton, Pennsylvania; 2Chemistry, Pennsylvania State University, Dunmore, Pennsylvania; 3Physics, Qatar University, Doha, Qatar.

D8.32
Transport Properties of Atomic and Molecular Wires: Ab Initio Calculations. Hiroshi Mizuseki1, Rodion Belosludov1, Sang Uck Lee1, Jian-Tao Wang2, Hao Chen3 and Yoshiyuki Kawazoe1; 1Institute for Materials Research, Tohoku University, Sendai, Japan; 2Institute of Physics, Chinese Academy of Sciences, Beijing, China; 3Physics Department, Fudan University, Shanghai, China.

D8.33
Abstract Withdrawn

D8.34
Study on Crystal Structure and Fluorescence of N-quinaldoylhydrazidatopalladium Complex. Miao Ding and Wen-Shi Wu; College of Materials Science and Engineering, Huaqiao University, Quanzhou, Fujian, China.

D8.35
Electrochemical Piezoelectric Phenomenon of Inherently Conducting Polymers And Its Applications. Yanzhe Wu1,3, Gursel Alici1, John D. Madden2, Geoffrey M. Spinks1, Gordon G. Wallace1 and Dermot Diamond3; 1ARC Centre of Excellence for Electromaterials Science, Wollongong, New South Wales, Australia; 2Advanced Materials Process and Engineering Lab, University of British Columbia, Vancouver, British Columbia, Canada; 3Adaptive Information Cluster, Dublin City University, Dublin, Ireland.

D8.36
Preparation of Pt Ohmic Contacts to p-InGaAs by Electroless Plating. Hungsu Im1, Bon heun Koo1, Chan gyu Lee1, Suzanne Mohney2 and Eric Lysczek2; 1Materials Engineering, Changwon National Univ., Changwon, South Korea; 2Department of materials science and engineering, Pennsylvania state university, State college, Pennsylvania.

D8.37
Investigation of the Defects in CdZnTe Crystals by PL Spectra. Jiahua Min, Wenbin Sang, Changjun Wang, Ling-en Dai, Yongbiao Qian, Jianyong Teng, Gang Li, Yue Lu, Jianrong Fan and Xiaoyan Liang; Electronic Information Materials, Shanghai university, Shanghai, China.

D8.38
Abstract Withdrawn

D8.39
Adsorption of NH3 on the Si (001) 2×1 Surface. Xuxu Bai1,2, François Rochet2, Wanqi Jie1, Jean-Jaqcues Gallet2, Fabrice Bournel2, Claire Matieu2, Gangqiang Zha1 and Li Fu1; 1School of Materials Science and Engineering, State Key Laboratory of Solidification Processing, Northwewstern Polytechnical University, Xi'an, Shaanxi, China; 2Laboratoire de Chimie Physique Matière et Rayonnement, Laboratoire de Chimie Physique Matière et Rayonnement, université Pierre et Marie Curie, Paris, France.

D8.40
Heavy Ion Irradiation Induced Optical Changes in a-SeTe Thin Film. Anup Thakur4, Vineet Sharma1, Virendera Singh2 and Vivek Kumar3; 1Physics, Jaypee University of Information Technology, Solan, Himachal Pradesh, India; 2School of Chemical and Biomolecular Engineering, Georgia Instituteof Technology, Atlanta, Alabama; 3Department of Particle Physics, Weizmann Institute of Sciences, Rehovot, Rehovot, Israel; 4Physics, UCoE, Punjabi University, Patiala, Punjab, India.

D8.41
Influence of the Gas Flow of Argon and the Distance Between Substrate and Plasma on Properties of Al-doped Zinc Oxide Films. Yuanjian Jiang, Dexian Zhang, Ke Tao, Hongkun Cai, Ying Xue, Jingfang Zhao, Linshen Wang and Jin Wang; Nankai University, Tianjin, China.

D8.42
Abstract Withdrawn

D8.43
Effect of Bi2O3 Addition on the Piezoelectric Properties of Lead-Free (Na0.5Bi0.5)TiO3-Ba(Sn0.08Ti0.92)O3 Ceramics. Chun Huy Wang, Department of Electronic Engineering,, Nan-Jeon Institute of Technology, Tainan, Taiwan 737, R.O.C., Tainan, Taiwan, Taiwan.

D8.44
Effect of Nb2O5 Addition on the Piezoelectric Properties of Lead-Free Ba(Zr0.04Ti0.96)O3-(Na0.5K0.5)NbO3 Ceramics. Chun Huy Wang and Jun-Jie Wang; Department of Electronic Engineering,, Nan-Jeon Institute of Technology, Tainan, Taiwan 737, R.O.C., Tainan, Taiwan, Taiwan.

D8.45
Electroactive Coordination Networks Based on Thioether-metal Interactions. Zhengtao Xu, Guo Huang, Xiao-Ping Zhou, Yan-Qiong Sun and Jun He; City Univ of Hong kong, Hong Kong, China.

D8.46
Printed Circuit Embedded Micro-battery Based on Nano-hetero Structure Direct Energy Conversion. Liviu Popa-Simil, LAVM LLC, Los Alamos, New Mexico.

D8.47
Infrared Property Improvement of Diamond-like Carbon on Ge Substrate. Hee-Suk Chung1, Heon woong Choi1, Kwang-Ryeol Lee2 and Kyu Hwan Oh1; 1Material Science and Engineering, Seoul National University, Seoul, South Korea; 2Future Convergence Technology Laboratory, Korea Institute of Science and Technology, Seoul, South Korea.

D8.48
Effects of Ta2O5 Addition on Properties of Ba0.6Sr0.4TiO3-Mg0.9Zn0.1O Ceramics for Phase Shifter Application. Ma Shuwang, Dong Guixia, Cui Jiandong and Du Jun; Advanced electronic materials institute, beijing, China.

D8.49
Abstract Withdrawn

D8.50
The Growth Mechanism of ZnSe Single Crystals in Chemical Vapor Transport System. Li Huanyong and Jie Wanqi; School of Material Science and Engineering, Northwestern Polytechnical University, Xi'an, ShaanXi, China.

D8.51
Fabrication and Characterization of p-type Transparent Conducting CuAlO2 Thin Films. Seok-Man Han and Nam-Hee Cho; Department of Materials Science and Engineering, Inha University, Incheon, South Korea.

D8.52
Preparation of Ca2Ti2O6 Pyrochore Films by MOCVD. Yuanwei Zhang1, Jie Yu1, Rong Tu2 and Takashi Goto2; 1Faculty of Physics and Electronics Technology, Hubei University, Wuhan, Hubei, China; 2Institute for Materials Research, Tohoku University, Sendai, Japan.

D8.53
Abstract Withdrawn

D8.54
The Epitaxial Growth of Er2O3 on Si and the Study on its Structural and Electric Properties. Zhu Yanyan, Shanghai University of Electric Power and Fudan University, Shanghai, China.

D8.55
Abstract Withdrawn

D8.56
Preparation and Characterization of Transparent CuAlO2/Al:ZnO Transparent Diodes. Jong-Ick Son and Nam-Hee Cho; Materials Sci. and Eng., Inha Univ., Inchon, South Korea.

D8.57
The Study of the Relationships between Te Partial Pressure, In Dopant Concentration and Electrical Properties of the CZT Crystal. Jiahua Min, Wenbin Sang, Ling-en Dai, Changjun Wang, Yongbiao Qian, Gang Li, Yue Lu, Xiaoyan Liang and Jianrong Fan; Electronic Information Materials, Shanghai university, Shanghai, China.

D8.58
DFT Description of Electronic and Magnetic Properties in Nonmagnetic N Atom Doped ZrO2. Lin Yu, Donghong Liu and Ying Dai; State Key Laboratory of Crystal Materials, Jinan, Shandong, China.

D8.59
The Composition Dependence of xBiFeO3-(1-x)PbTiO3 Films by Sol-gel Technique. Bingrong Yuan, Shengwen Yu, Jinrong Cheng and Zhongyan Meng; Department of Electronic Information Material, Shanghai University, Shanghai, China.

D8.60
High K SrTiO3 / Polyimide Composite Thick Films for High Frequency Application. Kecheng Li, Hong Wang, Feng Xiang and Xi Yao; Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education,Xi'an Jiaotong University, Xi'an, Shaanxi, China.

D8.61
Study on the Relationship between Electric Field Distribution in CdZnTe and Te Inclusions. Zhubin Shi, Wenbin Sang, Jiahua Min, Dongni Hu and Jianyong Teng; Electronic Information Materials, Shanghai university, Shanghai, China.

D8.62
Study on CdZnTe Crystal Growth Parameters Optimization. Wenbin Sang, Jiahua Min, Ling-en Dai, Zhaoli Xu and Changjun Wang; Electronic Information Materials, Shanghai university, Shanghai, China.

D8.63
Peculiarities of Heat Distribution in Semiconductor Structures Under a Pulse Laser Irradiation. Mykola Isaev, Andrey Kuzmich and Roman Burbelo; Physical Faculty, Taras Shevchenko Kyiv National University, Kyiv, Ukraine.

D8.64
Electronic Structure and Surface States in ZnO Wurtzite Structure using Tight-binding Model. Kuo-Feng Lin and Wen-Feng Hsieh; Department of Photonics and Institute of Electro-Optical Engineering, Hsinchu, Taiwan.

D8.65
Morphology of the Crystals of Bi2O3-SiO2 System by Solid State Reaction. Qing-Quan Tian, Xiu-Feng Wang, Cheng-Long Yu, Hong-Tao Jiang, Yan Wang and Zheng-Guang Zhang; School of Materials Science and Engineering, Shaanxi University of Science & Technology, Xi'an, Shaanxi Province, China.

D8.66
Magneto-optical Properties of Nanometer Crystal Giant Magneto-optical BiAlDyIG Thin Film Materials Post-treated by Rapid Recurrent Thermal Annealing (RRTA) Method. Qinghui Yang, Huaiwu Zhang, Yingli Liu and Qiye Wen; University of Electronic Science and Technology of China, Chengdu, Sichuan, China.

D8.67
Preparation and Gas-sensing Properties of Ce-doped SnO2 Materials. Li Chao1,2, Fang Shaoming1, Bi Lei1, Wang Huanxin1, Gui Yanghai1 and Chen Rongfeng2; 1Henan Province Key Laboratory of Surface and Interface Science,Zhengzhou University of Light Industry,Zhengzhou 450002,China;, Zhengzhou, Henan, China; 2Henan Academy of Science, Zhengzhou 450002, People's Republic of China, Zhengzhou, Henan, China.

D8.68
Effects of Quench Rates on the Atomistic Structure of Amorphous Silicon Carbide: A Molecular-Dynamics Study. Kun Xue, Li-Sha Niu and Hui-Ji Shi; Department of Engineering Mechanics, Tsinghua University, Beijing, China.

D8.69
Hydride Vapor Phase Epitaxy Growth of Thick GaN Layer on In Situ Etched MOCVD-GaN Template. Chaotong Lin1,2, Guanghui Yu1, Xingzhong Wang1,2, Mingxia Cao1,2, Ming Qi1 and Aizhen Li1; 1State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China; 2Graduate School of the Chinese Academy of Sciences, Peking, China.

D8.70
20 nm x 20 nm Pitch Fine Dot Arrays Formed by 30 keV EB Lithography and Ion-milling. Sumio Hosaka, Masumi Shirai, Zulfakri Mohamad, Hayato Sone and You Yin; Gunma University, Kiryu, Japan.

D8.71
Sb Induced Crystallisation of Amorphous Silicon on Quartz Substrates. Yi Wang1 and Omer Van Der Biest2; 1Beijing Institute of Petrochemical Techno;ogy, Beijing, China; 2K.U. Leuven, Leuven, Belgium.

D8.72
Fluorescence Properties of Novel Amphiphilic Europium Complex Langmuir-Blodgett (LB) Films. Li Tiesheng, Shang Wei, Zhang Fuli, Du Chenxia, Mao Luyuan and Wu Yangjie; Department of Chemistry, Zhengzhou University, Zhengzhou, China.

D8.73
Influences of Deposition Parameters on Microstructure and Pyroelectric Properties of BST Thin Films by R.F. Magnetron Sputtering. Chao Xiang, Tianjin Zhang, Zhijun Ma, Ruikun Pan, Jingyang Wang, Fen Zhan and Ren Chen; Faculty of Material Science and Engineering, Hubei University, Wuhan, Hubei, China.

D8.74
Enhancement in Photoluminescence of Porous Silicon by Sputter-deposition of an Ultrathin Silver Film. Chongmu Lee, Chanseok Hong and Hohyeong Kim; Materials Science and Engineering, Inha university, Incheon, South Korea.

D8.75
Carbon Nanotubes Synthesized by Simple Thermal Chemical Vapor Deposition and Their Electrical Properties. Xiaoping Zou, Research Center for Sensor Technology, Beijing Information Technology Institute, Beijing, China.

D8.76
Preparation and Characteristics of Two-dimensional Oxide Hollow Half-shell Arrays. Ai-Dong Li1,2, Yuan Gao1, Hai-Rong Guo1, Qian-Jin Wang1,2, Zheng-Bin Gu1,2 and Di Wu1,2; 1Materials Science and Engineering Department, Nanjing University, Nanjing, Jiangsu, China; 2National Lab of Solid State Microstructures, Nanjing University, Nanjing, Jiangsu, China.

D8.77
Numerical Study And Experiment Validation On Metamaterials In Metallic Magnetic Composites. Linli Zhang and Zhuo Xu; Electronic Materials Research Laboratory, Xi'an Jiaotong University, Xi'an, China.

D8.78
Abstract Withdrawn

D8.79
Abstract Withdrawn

D8.80
Electrodeposition Route to Synthesize SnO2 Microparticles as an Anode Material for Lithium Batteries. Li Chao1,2, Wei Wei1, Fang Shaoming1, Wu Shide1, Wang Huanxin1 and Chen Rongfeng2; 1Henan Province Key Laboratory of Surface and Interface Science,Zhengzhou University of Light Industry,Zhengzhou 450002,China;, Zhengzhou, Henan, China; 2Henan Academy of Science, Zhengzhou 450002, People's Republic of China, Zhengzhou, Henan, China.

D8.81
Synthesis of SrBi2Ta2O9 (SBT) Nanorods. Wen Wang and Ming Feng; Institute for advanced ceramics, Harbin Institute of Technology, Harbin, China.

D8.82
Optical and Electrical Properties of ZnO Nanocrystalline Textured Films Prepared by DC Reactive Magnetron Sputtering. Cheng Wenxiu, Ding Aili, Zheng Xin sen, Qiu Ping sun and He Xi yun; The State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Shanghai, China.

D8.83
Hydrothermal Synthesis of ZnWO4 Nanorods and Photocatalytic Properties in the Degradation of RhB. Qun Xiang1, Jiaqiang Xu1, Liyi Shi2, Pengcheng Xu1 and Qingyi Pan1; 1Shanghai University, Shanghai, China; 2material, Shanghai University, Shanghai, China.

D8.84
Preparation of Mesoporous Indium Oxide Nanorods. Zhixuan Cheng, E. Li, Jiaqiang Xu, Qingyi Pan and Xiaowen Dong; Shanghai University, Shanghai, China.

D8.85
Size Effect of Gold Nanoparticles Functioned as Heterogeneous Nucleation Agents on the As-prepared Polyacrylate-gold Composite Foams Prepared from Photopolymerization. Jui-Ming Yeh, Wei-I Hung, Yen-Hao Lin and Pei-Ju Chung; Chemistry, Chung Yuan Christian University, Chung Li, China.

D8.86
Synthesis and Seebeck Effect of Single-crystalline PbTe Nanorods via Composite-Hydroxide-Mediated Approach. Buyong Wan, Chenguo Hu, Hong Liu, Yufeng Xiong, Feiyun Li and Yi Xi; Applied Physics, Chongqing University, Chongqing, China.

D8.87
SnO2 Nanowires Grown on the MEMS Structure and their NO2Gas Sensing Characteristics. Dong Gun Lim1, Soon Il Kwon1, Tae Hwan Jung1, Seok Jin Lee1, Seung Beum Park1, Woo Chang Song2 and Jae Hwan Park1; 1Dept. of Electronic Engineering, Chungju National University, Chungju, Chungbuk, South Korea; 2Research Institute of BINT New Technology, Chungju National University, Chungju, Chungbuk, South Korea.

D8.88
Gas-sensing Characteristics of Nanocrystalline WO3-based NO2 Sensors Deposited by Facing Targets d.c Reactive Magnetron Sputtering. Donghai Li, Ming Hu and Cholyun Yong; School of electronic information engineering,tianjin university, Tianjin, China.

D8.89
A Pt/Bi3.15Nd0.85Ti3O12/SrTiO3/Si Gate Structure using in Ferroelectric DRAM (FeDRAM). Yongyuan Zang1, Dan Xie1, Tianling Ren1, Litian Liu1 and Zhimin Dang2; 1Tsinghua National Laboratory for Information Science and Technology(TNList), Institute of Microelectronics, Tsinghua Univeristy, Beijing, China; 2Key Laboratory of Beijing City for Preparation and Processing of Novel Polymer Materials & Ministry of Education Key Laboratory for Nanomaterials, Beijing University of Chemical Technology, Beijing, China.

D8.90
Abstract Withdrawn

D8.91
Abstract Withdrawn

D8.92
Atom Probe Tomography of the Fe73.5Si13.5B9Nb3Cu1 Soft Magnetic Material. Rongkun Zheng1, Nicolas Zalachas1, Zhi Wei Lin2, Yoshihito Yoshizawa3, Xuefeng Wang1, Ting-Yu Wang1, Wenrong Yang1, Zongwen Liu1, Jian Guo Zhu2, You Guang Guo2 and Simon P Ringer1; 1Australian Key Centre for Microscopy and Microanalysis, The University of Sydney, Sydney, New South Wales, Australia; 2Faculty of Engineering, University of Technology, Sydney, Sydney, New South Wales, Australia; 3Advanced Electronics Research Laboratory,, Hitachi Metals, Ltd., Kumagaya, Saitama 360-0843, Japan.

D8.93
Abstract Withdrawn

D8.94
Thermal Stability in Spin-valve Structure. Zhou Guanghong1,2, Wang Yin-gang1 and Qi Xian-jin1; 1School of Material s Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing, Jiangsu, China; 2Department of Mechanical Engineering, Huaiyin Institute of Technology, Huaian, Jiangsu, China.

D8.95
Ferromagnetism in Sputtered Co Doped CeO2 Thin Film on Single Crystal Al2O3 Substrate. YuanQiang Song1, HuaiWu Zhang1, QiYe Wen1, Hao Zhu2 and John. Q. Xiao2; 1State Key Laboratory of Electronic Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, People’s Republic of China, Chengdu, China; 2Department of Physics and Astronomy, University of Delaware, Newark, DE, USA, Newark, Delaware.

D8.96
Dilute Magnetic Semiconductors without Magnetic Elements. Yuan Ping Feng1, Rongqin Wu1, Hui Pan1, Lei Shen1, Jiabao Yi2 and Jun Ding2; 1Department of Physics, National University of Singapore, Singapore, Singapore; 2Department of Materials Science and Engineering, National University of Singapore, Singapore, Singapore.

D8.97
Ferromagnetism Observed in Transition Metal Doped High K Dielectric Ceramic. Qi-Ye Wen, Huai-Wu Zhang, Yuan-Qiang Song and Qing-Hui Yang; University of Electronic Science and Technology of China, Chengdu, China.

D8.98
Dielectric Relaxations and Weak Ferromagnetism in YFeO3 Ceramics. Ma Yan, Department of Materials Science and Engineering, Institute of Materials Physics and Microstructures, Hangzhou, China.

D8.99
First Principle Study on Magnetic Properties of Li-doped Diamond. Zhenkui Zhang1, Ying Dai1,2, Meng Guo1 and Baibiao Huang2; 1School of Physics and Microelectronics, Shandong University, Jinan, China; 2State Key Laboratory of Crystal Material, Shandong University, Jinan, China.

D8.100
Structural and Magnetic Properties of Ni-implanted SiC. Javier Garcia Lopez1, Yolanda Morilla1, Gabor Battistig2, Zsolt Zolnai2, Jean-Louis Cantin3 and Carlos Prieto4; 1Centro Nacional de Aceleradores, University of Seville, Sevilla, Spain; 2Research Institute for Technical Physics and Materials Science, Budapest, Hungary; 3Institut des Nanosciences, Paris, France; 4Instituto de Ciencia de Materiales de Madrid, CSIC, Madrid, Spain.

D8.101
Structural, Optical and Magnetic Properties of Fe-doped ZnO. Wenjuan Cheng1, Hengxiang Gong2 and Xueming Ma1; 1State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai, China; 2Department of Physics, Shaoxing University, Shaoxing, China.

D8.102
Thickness Dependence of La0.7Ca0.3 MnO3 Epitaxial Films Grown by Pulsed Laser Deposition. Young Joo Kim, Bon Heun Koo, Hung Su Im and Chan Gyu Lee; Changwon National University, Changwon, South Korea.

D8.103
Fabrication and Characterization of Self Assembled Nanotubes from Aromatic Fmoc-dipeptides. Haixia Xu1,2, Apurba K Das1,2 and Rein V Ulijn1,2; 1School of Materials, The University of Manchester, Manchester, England, United Kingdom; 2Manchester Interdisciplinary Biocentre (MIB), The University of Manchester, Manchester, United Kingdom.

D8.104
Microstructure of Rapidly Solidified CuFe10 Alloys. Zhou Zhiming1, Yang Mingbo1, Wang Yaping2 and Hu Hongjun1; 1Materials Science and Engineering, Chongqing Institute of Technology, Chongqing, China; 2Schcool of Science, Xi'an Jiaotong University, Xi'an, China.

D8.105
Abstract Withdrawn

D8.106
Zinc Selenide Diffusion Layers with Dominant Edge Radiation. Victor P Makhniy1, Mikhail M Sletov1, Ivan M Tkachenko1, Valentina V Gorley1, Paul Horley2, Yurii V. Vorobiov3 and Jesus Gonzalez-Hernandez4; 1Unidad Queretaro, CINVESTAV-IPN, Queretaro, QRO, Mexico; 2Yuri Fedkovych Chernivtsi National University, Chernivtsi, Ukraine; 3Centro de Física das Interacções Fundamentais, Lisboa, Portugal; 4CIMAV, Chihuahua, Mexico.

D8.107
Current Transport Mechanisms in n-CdIn2Te4/n-SnS2 Heterostructures. Yurii V. Vorobiov1, Petro Gorley2, Zinaida Grushka2, Olena Grushka2, Ilya Zabolotskyy2, Paul Horley3 and Jesus Gonzalez-Hernandez4; 1Unidad Queretaro, CINVESTAV-IPN, Queretaro, QRO, Mexico; 2Yuri Fedkovych Chernivtsi National University, Chernivtsi, Ukraine; 3Centro de Física das Interacções Fundamentais, Lisboa, Portugal; 4CIMAV, Chihuahua, Mexico.

D8.108
Metal Silicide Nanostructures Directly Transferred and Formed from Metal Patterns. Qiang Luo, Yun-long Li, Ai-zi Jin, Hai-fang Yang, Jun-jie Li and Chang-zhi Gu; Institute of Physics, CAS, Beijing, China.

D8.109
Chemical Synthesis and Characterization of FeCo Alloy NanoParticles Obtained by a Modified Polyol Method. Uk Rae Cho, Young Min Lee, Bon Heun Koo and Chan Gyu Lee; Changwon national univ., Changwon, South Korea.

D8.110
Effect of Ti Cap Layer Thickness on Structural and Magnetic Properties of Ti /Ni/Ti Perpendicular Magnetic Recording Films. Yunzhi Hu1, Jingsheng Yu2, Shunzhen Feng2, Hanwei Zhang1, Lihu Liu1, Yan Peng1 and Huiyuan Sun1; 1Hebei nomal university, Shijiazhuang, China; 2Shijiazhuang College, Shijiazhuang, China.

D8.111
Physical and Electrical features of Nano-grained BaTiO3 Ceramics Prepared Two-step Sintering. SunMin Moon and NamHee Cho; Materials science and engineering, Inha University, Incheon, South Korea.

D8.112
Enhanced Ferroelectric Properties of Multiferroic Bi0.85La0.15FeO3 Ceramics Fabricated by a Two-step Rapid Sintering Technique. Meiya Li1,2, Benfang Yu1,2, Zhongqiang Hu1, Ling Pei1, Dongyun Guo1 and Xingzhong Zhao1,2; 1Department of Physics, WUhan University, Wuhan, China; 2Key Laboratory of Acoustic and Photonic Material and Device of the Ministry of Education, Wuhan University, Wuhan, China.

D8.113
Study of Grain Boundary Reoxidation of Heavily La-doped of Barium Titanate Ceramics. Pu Yongping, Yang Wenhu, Wang Jinfei and Yang Gongan; School of Materials Science and Engineering,, Shaanxi University of Science and Technology, Xi'an, China.

D8.114
Structural and Properties of BiFeO3/Bi3.15Nd0.85Ti3O12 Double-layered Thin Films Derived by Sol-gel Method. Meiya Li1,2, Ling Pei1, Jun Liu1, Benfang Yu1, Dongyun Guo1 and Xingzhong Zhao1,2; 1Department of Physics, WUhan University, Wuhan, China; 2Key Laboratory of Acoustic and Photonic Material and Device of the Ministry of Education, Wuhan University, Wuhan, China.

D8.115
Synthesis and Characterization of Magnetic Nanocomposites with Fe3O4 Core. Jian Chen, Yin-gang Wang and Zi-quan Li; College of Material Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing, China.

D8.116
Effect of Annealing Temperature on Structure and Properties of BiFeO3 Thin Films Prepared on FTO Bottom Electrode by Chemical Solution Deposition. Meiya Li1,2, Jun Liu1, Ling Pei1, Benfang Yu1, Dongyun Guo1 and Xingzhong Zhao1,2; 1Department of Physics, WUhan University, Wuhan, China; 2Key Laboratory of Acoustic and Photonic Material and Device of the Ministry of Education, Wuhan University, Wuhan, Hubei, China.

D8.117
Preparation and Electro-optical Property of Functional Novel Poly(arylene ether)s. Chun-Che Lee, Kuan- Lung Huang, Yu-Hung Chueh and Wen-Yao Huang; National Sun Yat-Sen University, Institute of Electro-Optical Engineering, Kaohsiung, Taiwan.

D8.118
Memory Effect on Rod-Shaped Ru Complex Monolayer Film on an ITO Electrode. Keiichi Terada, Katsuaki Kobayashi and Masa-aki Haga; applied chemistry, Chuo university, Tokyo, Japan.

D8.119
Abstract Withdrawn

D8.120
Thermal Stability of Low Dose Ga+ Ion Irradiated Spin Valve. Qi Xianjin, Wang Yingang, Zhou Guanghong and Li Ziquan; Nanjing University of Aeronautics and Astronautics, Nanjing, China.

D8.121
Electronic Structures of Spintronic Materials CoLa2O4. Liu Jun1,2 and Liu Yu1; 1Institute for Applied Physics, Chongqing, China; 2College of Mathmatics and Physics, Chongqing, China.

D8.122
Structural Study of B2-Ni1-xTxSi/Si (001) (T = Co, Pd, Pt) using Density Functional Theory. Dae-Hee Kim1, Hwa-Il Seo2 and Yeong-Cheol Kim1; 1Materials Engineering, Korea University of Technology and Education, Chonan, South Korea; 2Information Technology, Korea University of Technology and Education, Chonan, South Korea.

D8.123
Abstract Withdrawn

D8.124
The Reversible Change of Specific Heat and Electric Pulse Induced Resistance Switching Properties at High Magnetic Field of La0.7Ca0.3MnO3 Polycrystalline. Zihua Wu1,2, Lidong Chen1, Qun Wang1, Weidong Yu1 and Xiaomin Li1; 1State Key Laboratory of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, P.R.China, Shanghai, China; 2Graduate School of the Chinese Academy of Sciences, P.R.China, Beijing, China.

D8.125
Giant Magnetic-field-induced Strain in NiMnGaSi Magnetic Shape Memory Alloy Prepared by Oxidation-reduction. ShuangXi Xue, ShangShen Feng, PeiYang Cai, Ying Zhou and WeiPing Chen; Faculty of Physics and Electronic Engineering, Taizhou University, Taizhou, China.

D8.126
In situ Observation of Ultrafine Grained Cu-Y Ribbon by HVEM during Deformation. Du Zhi Wei, Sun Ze Ming, Shao Bei Ling and Liu An Sheng; General Research Institute for Nonferrous Metals, Beijing, China.

D8.127
Patterning of Co/Pt Multilayers by Ga+ Ion Irradiation Using a Focused Ion Beam. Yin-gang Wang1 and Yizhong Huang2; 1College of Material Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing, China; 2Department of Materials, University of Oxford, Oxford, United Kingdom.

D8.128
In-situ TEM Characterization with AFM-STM Systems. Oleg Lourie, Nanofactory Instruments Inc., Richardson, Texas.

D8.129
Defect Cluster-induced X-ray Diffuse Scattering in GaN and InN Films. ZhiFang Ma1, Li Li Wang1, Yu Tian Wang1, De Sheng Jiang1, De Gang Zhao1, Shu Ming Zhang1, Jian Jun Zhu1, Zong Shun Liu1, Hui Yang1, Jun Wu Liang1 and Bo Qu2; 1Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China; 2Bede Scientific Instrument Ltd., Durham, DH1 1TW, United Kingdom.

D8.130
Corelation Between Lattice Strain and Band-gap Bowing of AlxGa1-xN Grown on Sapphire. Zhao Lan1, Lu Zhengxiong1, Cheng Caijing1, Zhao Degang2, Zhu Jianjun2, Qu Bo3, Zhang Xiangfeng1 and Sun Weiguo1; 1Luoyang Optoelectro Institute, Luoyang, China; 2Institute of Semiconductors,Chinese Academy of Sciences, Bejing, China; 3Bede Scientific Instrument Ltd.,, Belmont, United Kingdom.

D8.131
X-ray nanofocus Computed Tomography of Electronic Materials: Visualising of internal 3D-Structures with Submicrometer Resolution. Wei Chen, Zhenhui He and Thomas Paul; phoenix|x-ray Systems + Services, Wunstorf, Germany.

D8.132
Compositional Nano-scale Characterisation of Thin Film-based Materials for Nano-electronics Applications. Simon Burgess1, Huisheng Jiao2, Richard Curry3, Sarah Sharp1, David Cox3, Chris Hodson4 and Howard Kent1; 1Oxford Instruments NanoAnalysis, High Wycombe, Oxfordshire, United Kingdom; 2Oxford Instruments China, Shanghai, China; 3Advanced Technology Institute, University of Surrey, Guildford, United Kingdom; 4Oxford Instruments Plasma Technology, Bristol, United Kingdom.

D8.133
Focused Ion Beam Enabled Characterization of Nanostructured Materials for Electronic and Photonic Applications. Steven E. Kooi, ISN, MIT, Cambridge, Massachusetts.

D8.134
Electron Emission Property of Barium Strontium Titanate Ferroelectric Cathodes. Jie Cui, Yujun Feng, Xuan Huang and Zhaoxuan Sheng; Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, Xi’an Jiaotong University, Xi'an, China.

D8.135
The Role of Front Electrode in Electron Emission from Ferroelectric Cathode. Xuan Huang, Yujun Feng, Jie Cui and Zhaoxuan Sheng; Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, Xi'an Jiaotong University, Xi'an, China.

D8.136
Characterizations of Bismuth Telluride/gallium Nitride Heterojunction Photovoltaic Detector for MWIR Detection Under Room Temperature. Man Yee Pang1, Hsian Fei Lui2, Wai Sang Li2, Kin Hung Wong1 and Charles Surya2; 1Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China; 2Department of Electronic and Information Engineering, The Hong Kong Polytechnic University, Hong Kong, China.

SESSION D9: Emerging Materials and Magnetics
Thursday Morning, June 12, 2008
Auditorium
Session Chairs: G. Ramanath and Shengchun Qu

8:30 AM *D9.1
Novel Organic Semiconductors for High Performance Field-effect Transistors. Yunqi Liu, Institute of Chemistry, Chinese Academy of Sciences, Beijing, China.

9:00 AM *D9.2
Novel Polymer-based Nanocomposite Dielectric Materials. Zhi-Min Dang, MSE, Beijing University of Chemica Technology, Beijing, China.

9:30 AM D9.3
Electrically Configurable Devices Based on Ionic-doped Conductive Polymers: Nonvolatile Organic Memory and Organic/Si Nanowire Hybrid Field-Configurable Transistor. Qianxi (Maggie) Lai1, Zuhua Zhu1, Zhiyong Li2, Xuema Li2, William F. Stickle3, Theodore I. Kamins2, R. Stanley Williams2 and Yong Chen1; 1Department of Mechanical & Aerospace Engineering, University of California-Los Angeles, Los Angeles, California; 2Quantum Science Research, Hewlett-Packard Laboratories, Palo Alto, California; 3Advanced Materials Process Lab and Advanced Diagnostic Lab, Hewlett-Packard Company, Corvallis, Oregon.

9:45 AM D9.4
Ab initio Investigations on the Geometric and Electronic Structures of Diblock Molecular Diode under the Influence of Electric Field. Yanwei Li, Department of Material and Chemical Engineering, Guilin University of Technology, Guilin, Guangxi, China; Applied chemistry, Harbin Institute of Technology, Harbin, Heilongjiang, China.

10:00 AM D9.5
Abstract Withdrawn

10:15 AM BREAK

10:45 AM D9.6
Spatial Distribution of Manganese and Room Temperature Ferromagnetism in Manganese-doped ZnO Nanorods. Jinbin Wang, Faculty of Materials, optoelectronics and Physics, Xiangtan University, Xiangtan, China.

11:00 AM D9.7
Abstract Withdrawn

11:15 AM D9.8
Carrier Mobility and Hysteresis in Thin Graphite Field Effect Transistors with Ferroelectric Gate Oxides. Xia Hong1, Ke Zou1, Jun Zhu1, A. Posadas2, J. Reiner2 and Charles H. Ahn2; 1Physics, Penn State University, University Park, Pennsylvania; 2Applied Physics, Yale University, New Haven, Connecticut.

11:30 AM D9.9
The Research on the CdZnTe(111) Surfaces with Synchrotron Radiation Photoemission Spectroscopy. Gangqiang Zha1, Wanqi Jie1, Li Fu1 and Wenhua Zhang2; 1School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'An, Shan'Xi, China; 2National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui province, China.

11:45 AM D9.10
Study on Properties of Conductive PET Fabrics Prepared by Electroless Copper and Nickel Plating. Xueping Gan1, Kechao Zhou1 and Wenbin Hu2; 1State Key Laboratory of Powder Metallurgy, Central South University, Changsha, Hunan, China; 2State Key Laboratory of Metal Matrix Composites,Shanghai Jiaotong University, Shanghai, Shanghai, China.

SESSION D10: Nanomaterials
Thursday Morning, June 12, 2008
Room 202
Session Chairs: Rachel Goldman and Zhanguo Wang

8:00 AM D10.1
Formation of TiO2 Nanostructures in High-temperature Hydrothermal Reaction. Yuan Cai, Shengyao Yu, Kaifeng Yu and Ning Wang; Department of Physics and the Institute of Nano Science and Technology, the Hong Kong University of Science and Technology, Hong Kong, China.

8:15 AM D10.2
Highly Ordered Nanopore Arrays on Si Substrate Synthesized by Focused Ion Beam. Ming Zhe Hu1,2, Adam P. Robinson1, Hao Shuang Gu3 and Judith L. MacManus Driscoll1; 1Department of Materials Science and Metallurgy, University of Cambridge, Cambridge, Cambridge, United Kingdom; 2Electronic Department, Hubei University, Wuhan, Hubei Province, China; 3Key Laboratory of Ferroelectric and Piezoelectric Materials of Hubei Province, Hubei University, Wuhan, Hubei Province, China.

8:30 AM *D10.3
Ultimate Top-down Etching Processes for Future Nanoscale Devices. Seiji Samukawa, Institute of Fluid Science, Tohoku university, Sendai, Japan.

9:00 AM D10.4
Low Temperature Doping of ZnO Nanostructures. Jingbiao Cui, Allan Thomas, Hom Kandel, Yuchoong Soo and Tar-pin Chen; University of Arkansas at little Rock, Little Rock, Arkansas.

9:15 AM D10.5
Conduction and Hysteresis in ZnO Nanoparticle Films under Different Environmental Conditions. Jianpu Wang and Neil C. Greenham; Physics, University of Cambridge, Cambridge, United Kingdom.

9:30 AM D10.6
Polysilicon Nanowires as Embedded Electromechanical Sensors. Chee Chung Wong1,2, Ajay Agarwal1, Kin Liao2, Julien Reboud1, Pavel Neuzil1 and N. Balasubramanian1; 1Institute of Microelectronics, Singapore, Singapore; 2Schoool of Chemical and Biomedical Engineering, Nanyang Technological University, Singapore, Singapore.

9:45 AM D10.7
Si/a-Si Core/Shell Nanowires as Nonvolatile Crossbar Memories. Yajie Dong1, Guihua Yu1, Wei Lu2, Michael C McAlpine1 and Charles M Lieber1,3; 1Department of Chemistry and Chemical Biology, Harvard University, Cambridge, Massachusetts; 2Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan; 3School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts.

10:00 AM BREAK

10:30 AM D10.8
Fabrication and Applications of Large-area Silicon Nanowire Arrays. Hui Fang1,2 and Jing Zhu1,2; 1Beijing National Center for Electron Microscopy, Tsinghua University, Beijing, Beijing, China; 2Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing, Beijing, China.

10:45 AM D10.9
Self-assembled Diffusion-controlled Growth of Epitaxial Copper Silicide Nanotriangles, Nanosquares, and Nanowires. Tom Wu, Zhou Zhang and Hongyu Chen; Nanyang Technological University, Singapore, Singapore.

11:00 AM D10.10
Flextronics Based on Single-Crystal Silicon Nanomembranes. Zhenqiang Ma1, Hao-Chih Yuan1, Guogong Wang1, Huiqing Pang1, Guoxuan Qin1 and George K Celler2; 1ECE, University of Wisconsin-Madison, Madison, Wisconsin; 2Soitec, Peabody, Maryland.

11:15 AM D10.11
Simple Fabrication of Si Nanowire and its Biological Application as Nanoscale Heat Source. Yitung Cheng, Younghak Cho, Nobuyuki Takama and Beomjoon Kim; Institute of Industrial Science, The Univesity of Tokyo, Tokyo, Japan.

11:30 AM D10.12
Microstructure Characterization of Various Forms of ZnO Nanowires by Using Focused Ion Beam and Transmission Electron Microscopy. Haiping Sun, University of Michigan, Ann Arbor, Michigan.

SESSION D11: Nanomaterials
Thursday Afternoon, June 12, 2008
Auditorium
Session Chairs: Shengchun Qu and Zhanguo Wang

1:30 PM D11.1
Abstract Withdrawn

1:45 PM D11.2
Controlled Growth of Single-walled Carbon Nanotubes in Diameter Distribution and Metallicity. Yu Wang1, Yunqi Liu1, Hisashi Kajiura2 and Yongming Li2; 1Institute of Chemistry, Chinese Academy of Sciences, Beijing, China; 2Materials Laboratories, Sony Corporation, Okata, Atsugi city, Kanagawa 243-0021, Japan.

2:00 PM D11.3
Tunable Electrical Properties of Carbon Nanotube Fibers. Qingwen Li1,2, Dean E Peterson2 and Quanxi Jia2; 1Suzhou institute of Nanotech and Nanobionics, Suzhou, Jiangsu province, China; 2Los Alamos national Lab, Los Alamos, New Mexico.

2:15 PM D11.4
Defect Interactions and Their Effects on the Long-term Behavior of Single-walled Carbon Nanotubes. Abul Huq, Zongrong Zhou, Kheng Goh and Kin Liao; School of Chemical & Biomedical Engineering, Nanyang Technological University, Singapore, Singapore.

2:30 PM D11.5
Metallic and Semiconducting Single-Walled Carbon Nanotubes: Separation, Chemistry, and Potential Applications. Ya-Ping Sun, Chemistry, Clemson University, Clemson, South Carolina.

2:45 PM D11.6
Single-walled Boron Carbonitride Nanotube and its Semiconducting Nature. Xuedong Bai, Institute of Physics, Chinese Academy of Sciences, Beijing, China.

3:00 PM D11.7
Synthesis and Fundamental Understanding of Silver Nanoplates for Ionic Sensing Applications. Xuchuan Jiang1,2, Aibing Yu1 and Qinghua Zeng1; 1School of Materials Science & Engineering, University of New South Wales, Sydney, New South Wales, Australia; 2School of Materials and Metallurgy, Northeast University, Shengyang, Liaoning, China.

3:15 PM BREAK

3:45 PM D11.8
Ferroelectric-gated Carbon Nanotube Field Effect Transistor. Jun Wei Cheah, Lain Jong Li and Junling Wang; Materials Science and Engineering, Nanyang Technological University, Singapore, Singapore.

4:00 PM D11.9
Self-assembled Organic Nanostructures as Novel Electronic Materials. Yi Liu, The Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, California.

4:15 PM D11.10
Preparation and Dielectric Behavior of MWNT/BaTiO3/ Polyvinylidene Fluoride Three-phase Composites. Sheng-Hong Yao and Zhi-Min Dang; MSE, Beijing University of Chemica Technology, Beijing, China.

4:30 PM D11.12
Energy Structure of Self-assembled Quantum Dots Probed by Capacitance-voltage Spectroscopy and 1-dimensional Numerical Simulation. Wen Lei1,2, Matthias Offer2, Cedrik Meier2, Axel Lorke2, Chennupati Jagadish1, Dirk Reuter3 and Andreas Wieck3; 1Department of Electronic Material Engineering, Research School of Physical Science and Engineering, The Australian National University, Canberra, Australian Capital Territory, Australia; 2Department of Physics, Universität Duisburg-Essen, Duisburg, Germany; 3Solid State Physics, Ruhr-Universität Bochum, Bochum, Germany.

4:45 PM D11.13
Energy Spectrum of an Electron Confined in the Hexagon-shaped Quantum Well. Yurii V. Vorobiov1, Vitor R Vieira2, Paul P Horley2, Petro M Gorley3 and Jesus Gonzalez-Hernandez4; 1Unidad Queretaro, CINVESTAV-IPN, Queretaro, QRO, Mexico; 2Centro de Física das Interacções Fundamentais, Lisboa, Portugal; 3Yuri Fedkovych Chernivtsi National University, Chernivtsi, Ukraine; 4CIMAV, Chihuahua, Mexico.

5:00 PM D11.14
A Novel Focused Ion Beam Method for Fabricating Nanowire Core Shell Structures. Li He1, Jonas Johansson2,1, Mitsuhiro Murayama1 and Robert Hull1; 1Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia; 2Solid State Physics and the Nanometer Structure Consortium, Lund University, Lund, Sweden.

5:15 PM D11.15
Electrical Properties of CdTe Nanowires Prepared by a Template Method. Lucian Ion1, Ionut Enculescu2, Rosemary Bazavan1, Elena Matei2, Reinhard Neumann3 and Stefan Antohe1; 1Faculty of Physics, University of Bucharest, Magurele-Ilfov, Romania; 2National Institute for Materials Physics, Magurele-Ilfov, Romania; 3Material Forschung, GSI, Darmstadt, Germany.



MMR Ad

CIMTEC_2010

Asylum Research