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Symposium F: Materials Science and Technology for Nonvolatile Memories

Symposium F: Materials Science and Technology for Nonvolatile Memories Image

SYMPOSIUM F

Materials Science and Technology for Nonvolatile Memories
March 24 - 27, 2008
Chairs
Orlando Auciello     Argonne National Laboratory
Dirk Wouters     IMEC
Steven Soss     Intel Corporation
Seungbum Hong     Argonne National Laboratory

Symposium Support
Applied Materials Inc
Intel Corp
Seagate Technology
Symetrix Corp, Colorado Springs



* Invited paper

TUTORIAL
Materials Science and Technology for Nonvolatile Memories
Monday, March 24, 2008
8:30 AM - 5:15 PM
Room 2006 (Moscone West)


SESSION F1: Ferroelectric/Ferromagnetic/Multi-Ferroic
Chairs: Orlando Auciello and Ramamoorthy Ramesh
Tuesday Morning, March 25, 2008
Room 2006 (Moscone West)

8:30 AM *F1.1
High Density Thin Film Ferroelectric Nonvolatile Memories. Ramamoorthy Ramesh, Department of Materials Science & Engineering and Department of Physics, University of California-Berkeley, Berkeley, California.

9:00 AM F1.2
Magnetic Multilayer Ring Devices for Non-volatile Data Storage. Caroline Ross, Fernando Castaño, Bryan Ng, Wonjoon Jung and Irenee Colin; Dept. Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts.

9:15 AM F1.3
In-situ Studies of Surface Structural and Chemical Phenomena in Ultra-Thin Ferroelectric Films. Junsoo Shin, Peter Maksymovych, Von Braun Nascimento, Albina Borisevich, E. Ward Plummer, Vincent Meunier, Sergei V. Kalinin and Arthur P. Baddorf; Oak Ridge National Laboratory, Oak Ridge, Tennessee.

9:30 AM F1.4
Theoretical Study of A Localized Quantum Spin Reversal by The Spin Injection in A Spin Quantum Dot: A Data Writing Method for A Single-Atom Memory. Satoshi Kokado1, Kazumasa Ueda1, Kikuo Harigaya2 and Akimasa Sakuma3; 1Faculty of Engineering, Shizuoka University, Hamamatsu, Japan; 2Nanotechnology Research Institute, AIST, Tsukuba, Japan; 3Graduate School of Engineering, Tohoku University, Sendai, Japan.

9:45 AM F1.5
Local Piezoelectric Response and Domain Structure of PbTiO3 Nanotubes. Yunseok Kim1, Changduck Bae2, Kyu-Hyung Lee1, Jeong Yong Lee1, Kwangsoo No1 and Hyunjung Shin2; 1Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon, South Korea; 2School of Advanced Materials Engineering and Center for Materials and Processes of Self-Assembly, Kookmin University, Seoul, South Korea.

10:00 AM BREAK

10:30 AM *F1.6
MgO-barrier-based Magnetic Tunnel Junctions for Spin Transfer Torque Random Access Memory. Jun Hayakawa1,2, Shoji Ikeda2, Katsuya Miura1,2, Michihiko Yamanouchi1, Young Min Lee2, Ryutaro Sasaki2, Toshiyasu Meguro2, Masahiko Ichimura1, Kenchi Ito1, Takayuki Kawahara3, Riichiro Takemura3, Fumihiro Matsukura2, Hiromasa Takahashi1,3, Hideyuki Matsuoka1 and Hideo Ohno2; 1Hitachi Advanced research Laboratory, Tokyo, Japan; 2Tohoku University, Laboratory for Nanoelectronics and Spintronics, RIEC, Sendai, Japan; 3Hitachi Central Research Laboratory, Tokyo, Japan.

11:00 AM F1.7
High-Density Ferroelectric Nanocapacitors Based on Nanowire/CNT Bottom Electrodes and Ferrelectric Nanotubes. Hongjin Fan1, Susumu Kawasaki1, James F Scott1, Paul R Evans2 and John M Gregg2; 1Centre of Ferroics, University of Cambridge, Cambridge, United Kingdom; 2Centre for Nanostructured Media, Queens University Belfast, Belfast, Northern Ireland, United Kingdom.

11:15 AM F1.8
Chemistry, Electronic, Structural, and Transport Studies of CoFeB / MgO / CoFeB Magnetic Tunnel Junctions. John Read1, Judy J. Cha1, Pinshane Y. Huang2, William F. Egelhoff3, David A. Muller1 and Robert A. Buhrman1; 1Cornell University, Ithaca, New York; 2Carleton College, Northfield, Minnesota; 3National Institute of Standards & Technology, Gaithersburg, Maryland.

11:30 AM F1.9
A Room Temperature Ferroelectric Directly on Silicon. Maitri P. Warusawithana1, Y. Li1, L. -Q Chen1, D. G Schlom1, C. Cen2, C. Sleasman2, J. Levy2, J. C Woicik3, L. F Kourkoutis4, D. A Muller4, J. Klug5, M. Bedzyk5, H. Li6 and L. -P Wang7; 1Department of Materials Science and Engineering, Penn State University, University Park, Pennsylvania; 2Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, Pennsylvania; 3National Institute of Standards and Technology, Gaithersburg, Maryland; 4School of Applied and Engineering Physics, Cornell University, Ithaca, New York; 5Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois; 6Physical Sciences Research Laboratories, Motorola Laboratories, Tempe, Arizona; 7Intel Corporation, Santa Clara, California.

11:45 AM F1.10
Spin and Symmetry Filtering Effects in Single Crystal Magnetic Tunnel Junctions. Coriolan Tiusan1, Fanny Greullet1, Michel Hehn1, Francois Montaigne1, David Halley2, Olivier Bengone2, Martin Bowen2 and Wolfgang Weber2; 1Laboratoire de Physique des Materiaux LPM-UMR7556, CNRS - University of Nancy, Vandoeuvre les Nancy, France; 2IPCMS UMR7504, CNRS - University of Strasbourg, Vandoeuvre les Nancy, France.

SESSION F2: Flash/Nanocrystals
Chairs: Edwin Kan and Steven Soss
Tuesday Afternoon, March 25, 2008
Room 2006 (Moscone West)


1:30 PM *F2.1
Flash Memory Scaling: From Material Selection to Performance Improvement. Tuo-Hung Hou, Jaegoo Lee, Jonathan T. Shaw and Edwin C. Kan; School of Electrical and Computer Engineering, Cornell University, Ithaca, New York.

2:00 PM F2.2
Realization of Hybrid Silicon core/silicon Nitride Shell Nanodots by LPCVD for NVM Application. Jean Philippe Colonna1, Gabriel Molas1, Marc Walter Gely1, Bocquet Marc1, Helen Grampeix1, Pierre Brianceau1, Eric Jalaguier1, Barbara De Salvo1, Karim Yckache1, Anne Marie Papon1, Geoffroy Auvert1, Corrado Bongiorno2 and Salvatore Lombardo2; 1CEA-Leti, Grenoble cedex 9, France; 2IMM CNR, Catania, Italy.

2:15 PM F2.3
Gadolinium Oxide (Gd2O3) Blocking Layer for Fast Program and Erase Speed in SONOS-Type Flash Memory Devices. Jing Pu1, Sun Jung Kim2, Young Sun Kim2 and Byung Jin Cho1,3; 1Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore; 2Advanced Process Development Team, Memory Division, Samsung Electronics, Seoul, South Korea; 3Dept of Electrical Engineering, KAIST, DaeJeon, South Korea.

2:30 PM F2.4
Long Term Retention Characteristics of MOS Memory Devices with Self-Assembled Tungsten Nano-Dot Dispersed in Silicon Nitride. Yanli Pei, Takafumi Fukushima, Tetsu Tanaka and Mitsumasa Koyanagi; Tohoku Univeristy, Japan, Sendai, Miyagi, Japan.

2:45 PM F2.5
Impact of the High-Temperature Process Steps on the HfAlO Interpoly Dielectrics Stacks for Nonvolatile Memory Applications. Daniel Ruiz Aguado1,2, Bogdan Govoreanu1, Paola Favia1, Kristin De Meyer1,2 and Jan van Houdt1; 1IMEC, Leuven, Belgium; 2Katholieke Universiteit Leuven, Leuven, Belgium.

3:00 PM BREAK

3:15 PM *F2.6
High-k Materials for Flash Scaling into the sub-40nm Era. Jan Van Houdt, IMEC, Leuven, Belgium.

3:45 PM F2.7
Si Nanocrystal Based Memories: A Unique Tool to Demonstrate the Effect of the Nanocrystals Size and Density. Margit Zacharias1, Tiezheng Lu2, Daniel Hiller1, Marin Alexe2 and Roland Scholz2; 1IMTEK, University of Feiburg, Freiburg, Germany; 2MPI of Microstructure Physics, Halle, Germany.

4:00 PM F2.8
Effect of Top Dielectric Morphology and Gate Material on the Performance of Nitride-based FLASH Memory Cells. Antonio Cacciato, Laurent Breuil, Geert Van den bosch, Arnaud Furnemont, Aude Rothschild and Jan Van Houdt; IMEC, Leuven, Belgium.

4:15 PM F2.9
Relaxation Behavior and Breakdown Mechanisms of Nanocrystals Embedded Zr-doped HfO2 High-k Thin Films for Nonvolatile Memories. Chia-Han Yang2, Yue Kuo1, Rui Wan2, Chen-Han Lin1 and Way Kuo3; 1Thin Film Nano & Microelectronics Research Laboratory, Texas A&M University, College Station, Texas; 2Department of Industrial and Information Engineering, University of Tennessee, Knoxville, Tennessee; 3College of Engineering, University of Tennessee, Knoxville, Tennessee.

4:30 PM F2.10
Tunable Memory Characteristics of Nonvolatile Charge Trap Memory Devices Based on the Self-assembled Ordered Arrays of Metal Nanocrystals as a Charge Trapping Element. Yong-Mu Kim1, Byeong-Hyeok Sohn2 and Jang-Sik Lee1; 1School of Advanced Material Engineering, Kookmin University, Seoul, South Korea; 2Department of Chemistry & NANO Systems Institute, Seoul National University, Seoul, South Korea.

4:45 PM F2.11
Simulation of Capacitance-Voltage Characteristics of Ultra-tin Metal-Oxide-Semiconductor Structures with Embedded Nanocrystals.  Thottam S. Kalkur; University of Colorado at Colorado Springs, Colorado Springs, Colorado.

SESSION F3: Poster Session: Flash/Ferroics/Nanocrystals
Tuesday Evening, March 25, 2008
8:00 PM
Salon Level (Marriott)

F3.1
Switching Kinetics and Retention in Ferroelectric Hybrid Organic-Silicon Transistors. Roman Gysel1, Sebastian Riester1, Igor Stolichnov1, Alexander K. Tagantsev1, Nava Setter1, Giovanni Salvatore2, Didier Bouvet2 and Adrian M. Ionescu2; 1Ceramics Laboratory, EPFL Swiss Federal Institute of Technology, Lausanne, Switzerland; 2Laboratory of Micro/Nanoelectronic Devices, EPFL Swiss Federal Institute of Technology, Lausanne, Switzerland.

F3.2
Dielectric Functions and Critical Points of PbTiO3, PbZrO3, and PbZr0.57Ti 0.43O3 Grown on SrTiO3 Substrate: Anti-crossing Behavior. Kwang Nam Choi1, Tae Dong Kang1, Hosun Lee1, G. Xing2, V. Avrutin2, B. Xiao2 and H. Morkoc2; 1Dept. of Physics, Kyung Hee University, Yong-In, Kyonggi, South Korea; 2Dept. of Electrical Engineering, Virginia Commonwealth University, Richmond, Virginia.

F3.3
Cure of a Stress Assisted IrO2 Reduction in Additional Top Electrode ( Ir/IrO2 ) of 180nm, 0.48 um2 Cell, 1T1C, 64Mb FRAM. Doyeon Choi, Song Yi Kim, Hwi San Kim, Seung Kuk Kang, Woo Song Ahn, Joo Young Jung, Han Kyoung Ko, Young Ki Hong, Jai Hyun Kim, Won Woong Chung, Eun Sun Lee, Jin Young Kang, Young Min Kang, Dong Jin Jung, Hyun Ho Kim, Sung Yung Lee and Hong Sik Jeong; Advanced Technology Development Team, Memory Division, Samsung Electronics, Yongin, South Korea.

F3.4
Abstract Withdrawn

F3.5
Fabrication and Characterization of Ferroelectric Polymer/insulator/n-type ZnO Structures for Nonvolatile Memory Application. Koji Aizawa and Yusuke Ohtani; OEDS R&D Center, Kanazawa Institute of Technology, Ishikawa, Japan.

F3.6
Polarization of Strained SrTiO3 Films Grown on Si (001) and the Ferroelectric FET. Fred Walker1, Yaron Segal1, Jim Reiner1, Zhan Zhang2 and Charles Ahn1; 1Applied Physics and Center for Research on Interface Structures and Phenomena, Yale University, New Haven, Connecticut; 2Advanced Photon Source, Argonne National Laboratory, Argonne,, Illinois.

F3.7
Non-volatile Ferroelectric Polymer Memory transistor Based on Spin Cast Beta Poly(vinylidene fluoride) Thin Films via Rapid Thermal Annealing. Seok Ju Kang1, Youn Jung Park1, Beong Ok Cho2 and Cheolmin Park1; 1Yonsei Univ., Seoul, South Korea; 2Samsung Electronics, Yongin, South Korea.

F3.8
Fabrication and Electrical Studies of P(VDF/TrFE)(72/28) Copolymer based Non-Volatile Memory Devices as a Function of Varying Device Structures. Chang Woo Choi, Arun Anand Prabu, Sun Yoon and Kap Jin Kim; Advanced Polymer & Fiber Materials, Kyung Hee University, College of Environment & Applied Chemistry, Yongin-si, Gyeonggi-do, South Korea.

F3.9
Ferroelectric and Electrical Properties of BaZrO3 Doped Sr0.8Bi2.2Ta2O9 Thin Films. Mehmet Sait Bozgeyik1,4, Jeffery S. Cross1,2, Hiroshi Ishiwara3 and Kazuo Shinozaki1; 1Metallurgy and Ceramics Science, Tokyo Institute of Technology, Tokyo, Tokyo, Japan; 2Fujitsu Laboratories, Ltd., Atsugi, Kanagawa, Japan; 3Interdisciplinary Graduate School of Sci. and Engineering, Tokyo Institute of Technology, Yokohama, Kanagawa, Japan; 4Dept. of Physics, Faculty of Science and Literature, Kahramanmaras Sutcuimam Univ., Kahramanmaras, Kahramanmaras, Turkey.

F3.10
Organic Field Effective Transistor using BaTiO3-Mn Doped and PVDF-TrFe for Non Volatile Memory Application. Sambit Pattnaik, Ashish Garg and Monika Katiyar; Materials and Metallurgical Engineering, Indian Institute of Technology Kanpur, Kanpur, Uttar pradesh, India.

F3.11
Structural Study On The Ferroelectric Transition In Magnetoelectric YMnO3. Jin-young Kim1, Nam-soo Shin2 and Yang-mo Koo1; 1Pohang University of Science and Technology, Pohang, South Korea; 2Pohang Accelerator Laboratory, Pohang, South Korea.

F3.12
Synthesis and Multiferroic Properties of BixLa1-xFe1-yCryO3 (BLFCO) Ceramics. Ricardo Martinez, Physics, University of Puerto Rico, San Juan PR, Puerto Rico.

F3.13
Engineering of Single Crystal Fe/MgO/Fe(001) Magnetic Tunnel Junctions with Large Output Voltage and Extremely Low Noise. Fanny Greullet1, Coriolan Tiusan1, Michel Hehn1, Farkhad Aliev2, Ruben Guerrero2, D. Herranz2 and Francois Montaigne1; 1Laboratoire de Physique des Materiaux LPM UMR7556, CNRS- University of Nancy, Vandoeuvre les Nancy, France; 2Departamento de Fisica de la Materia Condensado, University of Madrid, Madrid, Spain.

F3.14
Stability of Larger Ferromagnetic Chain-of-sphere Nanostructure Comprising Magnetic Vortices. Prabeer Barpanda, Department of Materials Science and Engineering, Rutgers University, Piscataway, New Jersey.

F3.15
Cu/Co Magnetic Nanowires Grown in a Integrated Self-Assembled Anodic Aluminum Template for Non Volatile Magnetic Memory Applications. Vladimir Makarov, Liwen Tan, Xiaobo Huang, Patrick McGary and Bethanie J.H. Stadler; Electrical and Computer Engineering, University of Minnesota, Minneapolis, Minnesota.

F3.16
Synthesis of Nickel Disilicide Nanocrystal Monolayers for Nonvolatile Memory Applications. Jong-Hwan Yoon1 and Robert G Elliman2; 1Department of Physics, Kangwon National University, Chuncheon, Gangwon-do, South Korea; 2Department of Electronic Materials Engineering, Australian National University, Canberra, Australian Capital Territory, Australia.

F3.17
Obervation of Charging Effects in InAs Nanocrystals Based MOS Capacitors for Non Volatile Memories. Moira Hocevar1,2, Armel Descamps1, David Albertini1, Michel Gendry2 and Abdelkader Souifi1; 1INL-INSA de Lyon, Villeurbanne, France; 2INL-Ecole Centrale de Lyon, Ecully, France.

F3.18
Ge-nanodot-based Nonvolatile Memories by Using ZrO2 Films as Insulating Dielectrics. Seung Hui Hong1, Pil Seong Jeong1, Sung Won Hwang1, Min Choul Kim1, Hye Ryong Kim1, Suk-Ho Choi1 and Kyung Joong Kim2; 1College of Electronics and Information, Kyung Hee University, Yongin, Kyungkido, South Korea; 2Division of Advanced Technology, Korea Research Institute of Standards and Science, Daejeon, South Korea.

F3.19
FePt Nanoparticles Synthesised Inside Ordered Mesoporous Materials. Stefan Kaskel and Emanuel Kockrick; Technical Unicersity Dresden, Dresden, Germany.

F3.20
MOSFET Memories with Ge/Si Hetero-nanocrystals as Floating Gate. Bei Li and Jianlin Liu; Quantum Structures Laboratory, Department of Electrical Engineering, University of California Riverside, Riverside, California.

F3.21
Ge Nanocrystals Fabricated by One-Step Thermal Oxidation and Rapid Thermal Annealing on Polycrystalline-SiGe Chyuan-Haur Kao1, Chao-Sung Lai1, M. C. Tsai1, C. R. Chen2, S. H. Lee1, C. S. Chuang1, K. S. Chen1 and H. C. Huang1; 1Electronics Engineering, Chang Gung University, Tao Yuan, Taiwan; 2Material Analysis, Material Science Service Corporation, Hsin Chu, Taiwan.

SESSION F4: Emerging (Probe/Cross-point/Organic) I
Chairs: Seungbum Hong and Armin Knoll
Wednesday Morning, March 26, 2008
Room 2006 (Moscone West)

8:30 AM *F4.1
Probe-based Ultrahigh Density Data Storage Utilizing Thermo-Mechanical Nanoindentation in Polymers. Armin Knoll, IBM Research GmbH, Ruschlikon, Switzerland.

9:00 AM F4.2
Impedance Switching and Negative Differential Resistance in Block Copolymer or Metal-polymer Composite Memory Devices. Marja Vilkman1,3, Ari Laiho3, Jayanta Baral2, Tomi Hassinen1, Himadri Majumdar2, Robin Ras3, Ronald Österbacka2, Olli Ikkala3 and Henrik G O Sandberg1; 1Printable Electronics and Optics, VTT Technical Research Center of Finland, Espoo, Finland; 2Department of Physics, Åbo Akademi University, Turku, Finland; 3Molecular Materials Group, Helsinki University of Technology, Espoo, Finland.

9:15 AM F4.3
Nano Dot Manipulation with memory density of above 1 Tbit/inch2 in Ferroelectric Data Storage System. Tanaka Kenkou and Cho Yasuo; Research Institute of Electrical Communication, Tohoku University, Sendai, Japan.

9:30 AM F4.4
Imaging And Elemental Analysis Of Polymer/Fullerene Composite Memory Devices : Influence Of Morphology. Ari Laiho1, Jayanta K. Baral2, Himadri S. Majumdar2, Daniel Tobjork2, Antti Soininen1, Hua Jiang3,4, Esko I. Kauppinen3,4, Robin H. A. Ras1, Janne Ruokolainen1, Ronald Osterbacka2 and Olli Ikkala1; 1Department of Engineering Physics and Mathematics and Center for New Materials, Helsinki University of Technology, Espoo, Finland; 2Department of Physics and Center for Functional Materials, Åbo Akademi University, Turku, Finland; 3NanoMaterials group, Laboratory of Physics and Center for New Materials, Helsinki University of Technology, Espoo, Finland; 4VTT Biotechnology, Espoo, Finland.

9:45 AM F4.5
Surface Roughness Control of Polymeric Thin Films for Probe Storage Applications. David Pires1, Armin Knoll1, Urs Dürig1, Bernd Gotsmann1 and Fabrizio Porro2; 1IBM Zurich Research Laboratory, Rueschlikon, Switzerland; 2STMicroelectronics, Portici, Italy.

10:00 AM BREAK

10:30 AM *F4.6
Development of Resistive Probe Storage Device with Potential Areal Density above 1 Tb/in2. Hyoungsoo Ko1, Seungbum Hong2, Hongsik Park3, Chulmin Park1, Yongkwan Kim1, Juhwan Jung1, Dong-ki Min1, Hyunjung Shin4 and Kyunghee Ryu4; 1Semiconductor Device Lab, Samsung Advanced Institute of Technology, Kyunggi-do, South Korea; 2Materials Science Division, Argonne National Laboratory, Argonne, Illinois; 3Division of Engineering, Brown University, Providence, Rhode Island; 4Advanced Materials Engineering, Kookmin University, Seoul, South Korea.

11:00 AM F4.7
Realization of Self-assembled Arrays of Nanoscale Resistive Switching Blocks in Thin Films of Nb-doped SrTiO3. Ruth Christine Muenstermann, Regina Dittmann, Krzysztof Szot, Paul Meuffels, Shaobo Mi, Chun-Lin Jia and Rainer Waser; Institute for Solid State Research, Research Centre Juelich, Juelich, Germany.

11:15 AM F4.8
PFM2: Probing the Role of Single Defects on Polarization Switching in Ferroelectric and Multiferroic Materials. Sergei V. Kalinin1, Stephen Jesse1, Arthur Baddorf1, Brian J. Rodriguez1, Eugene A. Eliseev2, Anna N. Morozovska2, Samrat Choudhury3 and Long Qing Chen3; 1Oak Ridge National Laboratory, Oak Ridge, Tennessee; 2National Academy of Sciences of Ukraine, Kiev, Ukraine; 3Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania.

11:30 AM F4.9
PDMS-Printed Patterned Monolayer Films of Magnetic L10 FePt Nanocrystals. Reken Niranjan Patel1, Andrew T. Heitsch1, Changbae Hyun1, Alex De Lozanne1, Yueh-Lin Loo2 and Brian A. Korgel1; 1Chemical Engineering, University of Texas at Austin, Austin, Texas; 2Chemical Engineering, Princeton University, Princeton, New Jersey.

11:45 AM F4.10
Reproducible Resistive Switching in Non-volatile Organic Memories. Frank Verbakel1,2, Stefan C.J. Meskers1,2, Rene A.J. Janssen1,2, Henrique L. Gomes4, Michael Coelle3, Michael Buechel3 and Dago M. de Leeuw3; 1SMO-M2N, Eindhoven University of Technology, Eindhoven, Netherlands; 2Dutch Polymer Institute (DPI), Eindhoven, Netherlands; 3Philips Research Labs, Eindhoven, Netherlands; 4CEOT, Universidade do Algarve, Faro, Portugal.

SESSION F5: Poster Session: Emerging (RRAM/Crosspoint/Organic/Probe) II
Wednesday Afternoon, March 26, 2008
12:00 PM - 2:00 PM
Exhibit Hall (Moscone West)


F5.1
Molecular Conformation-dependent Memory Effects in Non-conjugated Polymers with Pendant Carbazole Moieties. Siew Lay Lim1,2, Qidan Ling2, Eric Yeow Hwee Teo3, Chun Xiang Zhu3, Daniel Siu Hung Chan3, En-Tang Kang2 and Koon Gee Neoh2; 1NUS Graduate School of Integrative Sciences and Engineering (NGS), National University of Singapore, Singapore, Singapore; 2Department of Chemical and Biomolecular Engineering, National University of Singapore, Singapore, Singapore; 3SNDL, Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore.

F5.2
Direct Metal Transfer (DMT) at Nanoscale for the Ubiquitous Organic Devices Era. Gun Young Jung and Kyeongmi Lee; Materials Science and Engineering, GIST, Gwangju, South Korea.

F5.3
AC Characterization of Cross-linkable Polymer Memory Devices. Bao Lei, Wei Lek Kwan and Yang Yang; Materials Science and Engineering, UCLA, Los Angeles, California.

F5.4
Resistance Switching of Organic Devices Based on P3HT-PCBM Bulk Heterojunction. Hey Jin Myoung, Sung-Soo Bae, Hu Young Jeong and Sung-Yool Choi; ETRI, Daejeon, South Korea.

F5.5
Stackable Polymer Memory Devices. Wei Lek Kwan, Ricky J. Tseng, Wei Wu, Qibing Pei and Yang Yang; Materials Science and Engineering, University of California, Los Angeles, Los Angeles, California.

F5.6
Au Nanoparticles Blended poly(N-vinylcarbazole) Films for Nonvolatile Memory Applications. Pei-Ying Lai and Jen-Sue Chen; Materials Science and Engineering, National Cheng Kung University, Tainan, Taiwan.

F5.7
Metal Nanoparticles Free Transparent Organic Bistable Memory Devices. Sung Hyun Kim1, Kyoung Soo Yook2, Jyongsik Jang1, Oh Young Kim2 and Jun Yeob Lee2; 1Seoul National University, Seoul, South Korea; 2Dankook University, YoungIn, South Korea.

F5.8
Transferred to F7.3

F5.9
Effect of Ferroelectric Polarization on Tunneling Current. Evgeny Kiriranov1, Andrei Sokolov3,4 and Jody Redepenning2,4; 1Lincoln South-West High School, Lincoln, Nebraska; 2Chemistry, University of Nebraska-Lincoln, Lincoln, Nebraska; 3Physics and Astronomy, University of Nebraska-Lincoln, Lincoln, Nebraska; 4Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, Nebraska.

F5.10
Electronic and Optical Data Read Out from Single Layer Organic Memory Device. Basudev Pradhan and Ghassan E. Jabbour; School of Materials, Arizona State University, Tempe, Arizona.

F5.11
Dependence of Organic Thickness on Electrical characteristic Behavior in Low Molecular Organic Nonvolatile Memory. Yool Guk Kim1, Sung Ho Seo1, Gon Sub Lee1, Jae Gun Park1 and Yoon Joong Kim2; 1Department of Electrical & Computer Engineering, Hanyang University, Seoul, South Korea; 2Electron Microscopy Team, Korea Basic Science Institute, Deajeon, South Korea.

F5.12
Low Molecular Organic Nonvolatile Memory Fabricated with Ni Nanocrystals Embedded in Alq3. Oh YoungHwan1, Nam Woo Sik1, Lee Gon Sub1, Park Jea Gun1 and Lee Yong Bok2; 1hanyang university, Seoul, South Korea; 2Korea Basic Science Institute, Daejeon, South Korea.

F5.13
Current Conduction Mechanism for Low-molecular Organic Nonvolatile Memory. Sungho Seo, Woo Sik Nam, Gon Sub Lee and Jea Gun Park; Hanyang University, Seoul, South Korea.

F5.14
Effect of Au Nanocrystals Embedded in Conductive Polymer on Non-volatile Memory Window. Hyun Min Seung, Jong Dae Lee, Byeong Il Han, Gon Sub Lee and Jae Gun Park; Hanyang Univ., Seoul, South Korea.

F5.15
Resistive Switching Devices Based on Solid State Electrolytes. Jiang Yin, Hongxuan Guo, Liang Chen and Zhiguo Liu; Dept. of Phys./National Laboratory of Solid State Microstructures, Nanjing University, Nanjing, Jiangsu, China.

F5.16
Optical Properties of NiO Thin Films Grown by DC and RF Sputtering Deposition Studied with Spectroscopic Ellipsometry. Seoung Ho Baek, Hosun Lee, Kwang Nam Choi, Kwan Soo Chung and Jun Woo Park; Dept. of Physics, Kyung Hee University, Yong-In, Kyonggi, South Korea.

F5.17
Abstract Withdrawn

F5.18
Oxide Diode Fabricated at Room Temperature as a Switch Element. Kwan Soo Chung1, Kwang Nam Choi1, Jun Woo Park2 and Hosun Lee2; 1Electronic Engineering, KyungHee University, Yongin-si, Gyenggi-do, South Korea; 2Physics, Kyunghee University, Yongin-si, Gyenggi-do, South Korea.

F5.19
Substantial Reduction of Reset Current in CoO RRAM with Ta Bottom Electrode. Hisashi Shima1, Fumiyoshi Takano1, Yukio Tamai2, Hidenobu Muramatsu1, Hiro Akinaga1, Isao Inoue3 and Hidenori Takagi3,4; 1Nanotechnology Research Institute, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki, Japan; 2Advanced Technology Research Laboratories, Sharp Corporation, 1 Asahi, Daimon-cho, Fukuyama, Hiroshima, Japan; 3Correlated Electron Research Center, National Institute of Advanced Industrial Science and Technology, Tsukuba Central 4, 1-1-1 Higashi, Tsukuba, Ibaraki, Japan; 4Department of Advanced Materials, University of Tokyo, Kashiwa, Chiba, Japan.

F5.20
The Interfacial States between Metal/Oxide and the RRAM - Part II. Wei Pan and David Russell Evans; Materials and Device Applications Lab, Sharp Labs of America, Camas, Washington.

F5.21
Process Optimization of Ni Nanocrystals Formation Using O2 Plasma Oxidation to Fabricate Low-molecular Organic Nonvolatile Memory. Woo Sik Nam, Gon Sub Lee, Sung Ho Seo and Jea Gun Park; Tera-bit Nonvolatile Memory Development Center, Hanyang University, Seoul, South Korea.

SESSION F6: Resistance Change RAM
Chairs: In Gyu Baek and Dirk Wouters
Wednesday Afternoon, March 26, 2008
Room 2006 (Moscone West)

2:00 PM *F6.1
Oxide Based Resistive Memories: from Fundamentals to Devices. In Gyu Baek1 and Myoungjae Lee2, 1Memory Devision Process Development Team, Samsung Electronics Co. Ltd., Yongin, Gyeonggi-Do, South Korea; 2Semiconductor Device Lab, Samsung Advanced Institute of Technology, South Korea.

2:30 PM F6.2
Abstract Withdrawn

2:45 PM F6.3
Abstract Withdrawn

3:00 PM BREAK

3:30 PM *F6.4
Resistive Electrical Switching of Cu+ and Ag+ based Metal-Organic Charge Transfer Complexes. Robert Mueller1, Joris Billen1,3, Aaron Katzenmeyer1, Ludovic Goux2, Dirk J Wouters2, Jan Genoe1 and Paul Heremans1,3; 1PT\SOLO\PME, IMEC v.z.w., Leuven, Vlaams Brabant, Belgium; 2PT\CMOSRD\MEMORY, IMEC v.z.w., Leuven, Vlaams Brabant, Belgium; 3ESAT, Katholieke Universiteit Leuven, Leuven, Vlaams Brabant, Belgium.

4:00 PM F6.5
Improvement of ReRAM Retention Properties in Pt/FeOx/Pt Heterostructures by Combining Unipolar and Bipolar Switching Modes. Zhiqiang Wei, Takumi Mikawa, Yoshihiko Kanzawa, Yoshikazu Katoh, Shunsaku Muraoka, Akaihiro Odakawa and Takeshi Takaki; Advanced Devices Development Center, Matsushita Electric Ind. Co., Ltd., Moriguchi, Osaka, Japan.

4:15 PM F6.6
A Pt/TiO2/Pt Capacitor Stack as Nonvolatile ReRAM: Switching Characteristics and Microstructural Characterization. Herbert Schroeder, Doo Seok Jeong and Jun Miao; IEM/IFF and CNI, Forschungszentrum Juelich GmbH, Juelich, Germany.

4:30 PM F6.7
Electronic Transport Through a Thin Resistive Switching Titanium Oxide Layer. Julien Borghetti, Jianhua Yang, Matthew Pickett, Dmitri Strukov, Doug Ohlberg, Duncan Stewart and Stanley Williams; Hewlett-Packard Laboratories, Palo Alto, California.

4:45 PM F6.8
Switching Speed Improvement in Bipolar Resistance Switching Device with Ti/Pr0.7Ca0.3MnO3/Pt Structure. Hiroyasu Kawano1, Keiji Shono1, Yasutoshi Sakakibara2, Takeshi Yokota2 and Manabu Gomi2; 1Fujitsu Laboratories Ltd., Akashi, Hyogo, Japan; 2Nagoya Institute of Technology, Nagoya, Aichi, Japan.

SESSION F7: Emerging (Probe/Cross-point/Organic) III
Chairs: Hyoungsoo Ko and Yang Yang
Thursday Morning, March 27, 2008
Room 2006 (Moscone West)

8:30 AM *F7.1
Recent Progress on Organic/polymer Memory Devices and Their Stacking Structure. Yang Yang1,2, Wei Lek Kwan1, Bao Lei1 and Ricky Tseng1; 1Materials Sci. & Eng., UCLA, Los Angeles, California; 2California Nanosystem Institute, UCLA, Los Angeles, California.

9:00 AM F7.2
Understanding the Bi-polar Nonvolatile Switching in Oxide Based Resistive Junctions. J. Joshua Yang, F. Miao, D. Ohlberg, J. Borghetti, M. Pickett, Z. Li, W. Tong, D. Stewart and R. S Williams; Hewlett-Packard Laboratories, Palo Alto, California.

9:15 AM F7.3
Polymeric Schottky Diodes for Non-volatile Memories. Kamal Asadi1, Dago M. de Leeuw1,2, Bert de Boer1 and Paul W. M. Blom1; 1Zernike Institute for Advanced Materials, University of Groningen, Groningen, Netherlands; 2High Tech Campus, Philips Research Laboratoires, Eindhoven, Netherlands.

9:30 AM F7.4
Amorphous Silicon Based Nonvolatile Resistive Switching Crossbar Memory. Sung Hyun Jo and Wei Lu; University of Michigan, Ann Arbor, Michigan.

9:45 AM F7.5
High Performance MIM and Cross-Point Non-volatile Organic Memory Devices using Novel Polyfluorene-Derivative Single Layer Film. Tae Wook Kim, Seung-Hwan Oh, Hyejung Choi, Gunuk Wang, Dong-Yu Kim, Hyunsang Hwang and Takhee Lee; Material science and engineering, Gwangju Institute of Science and Technology& techenlogy, Gwangju, South Korea.

10:00 AM BREAK

10:30 AM F7.6
Resistance Switching in Ionic Nanowires. David Schoen, Stephen Conner and Yi Cui; Materials Science and Engineering, Stanford University, Stanford, California.

10:45 AM F7.7
Dual-frequency resonance-tracking Piezoresponse Force Microscopy: High Sensitivity Imaging, Spectroscopy, and Energy Dissipation. Anil Ganepalli1, Stephen Jesse2, Katyayani Seal2, Keith Jones1, Brian Rodriguez2, Clint Callahan1, Sergei Kalinin2 and Roger Proksch1; 1Asylum Research, Santa Barbara, California; 2The Center for Nanophase Materials Sciences and Materials Sciences and Technology Division, Oak Ridge national Laboratory, Oak Ridge, Tennessee.

11:00 AM F7.8
Nonvolatile Resistive Switching Characteristics of HfO2 with Cu Doping. Weihua Guan1, Shibing Long1, Ming Liu1 and Wei Wang2; 1Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China; 2Indiana University - Purdue University Indianapolis, Indianapolis, Indiana.

11:15 AM F7.9
Lattice Strain and Properties of Self Assembled BiFeO3-CoFe2O4 Nanocomposite Thin Films. Murali Rajaram1, Nico Dix1, Céline Lichtensteiger4, Jill Guyonnet4, Vassil Skumryev2, Manuel Varela3, Florencio Sanchez1, Jean-Marc Triscone4 and Josep Fontcuberta1; 1ICMAB-CSIC, Barcelona, Spain; 2ICREA, Barcelona, Spain; 3Departament de Fisica Aplicada i Optica, Universitat de Barcelona, Barcelona, Spain; 4DPMC, Université de Genève, Genève, Switzerland.

11:30 AM F7.10
Diblock-copolymer Mediated Nanopatterning of Solution-Derived Electronic Oxides. Geoff Brennecka1, John G Ekerdt2, Jill S Wheeler1 and Bruce A Tuttle1; 1Electronic and Nanostructured Materials, Sandia National Laboratories, Albuquerque, New Mexico; 2Deparment of Chemical Engineering, University of Texas at Austin, Austin, Texas.

11:45 AM F7.11
Evolution of the Resistive Switching Characteristics During Electroforming of Epitaxial Iron-doped SrTiO3 Thin Films. Tobias Menke1,2, Regina Dittmann1,2, Krzysztof Szot1,2, Paul Meuffels1,2 and Rainer Waser1,2; 1Institute of Solid State Research, Research Center Jülich, Jülich, Germany; 2Center of Nanoelectronic Systems for Information Technology, Research Center Jülich, Jülich, Germany.

SESSION F8: Future Nonvolatile Memories I
Chairs: Orlando Auciello and Seungbum Hong
Thursday Afternoon, March 27, 2008
Room 2006 (Moscone West)

1:30 PM *F8.1
Optimization of Advanced FeRAM Materials and Processes. Carlos A. Paz de Araujo, Symetrix Corp., Colorado Springs, Colorado; Electrical Engineering, University of Colorado, Colorado Springs, Colorado.

2:00 PM F8.2
Aluminum Oxide Thin Films Using Sputtering Technique as Blocking Oxide for Flash Memory Applications. Pawan Singh1,2, Kaushal Singh1, Ralf Hofmann1, Karl Armstrong1, Souvik Mahapatra2 and Nety Krishna1; 1Applied Materials, Santa Clara, California; 2Electrical Engineering, Indian Institite of Technology Bombay, Mumbai, India.

2:15 PM F8.3
Materials Aspects of Si-rich Silicon Nitrides for Use in Antifuse Nonvolatile Memories with Low Programming Voltages. Scott Habermehl, Roger T Apodaca, Robert Kaplar, Liz Roherty-Osmum and David J Stein; Microelectronics Development Lab, Sandia National Laboratories, Albuquerque, New Mexico.

2:30 PM F8.4
Molecular Memory Devices using Ruthenium-terpyridine, MLCT, Complexes. Hyoyoung Lee, Junghyun Lee, Kyoungja Seo, Gyeong Sook Bang, Hojong Chang and Sangkwan Kim; NCRI, Center of Smart Molecular Memory, ETRI, Daejeon, South Korea.

2:45 PM F8.5
Direct Time Resolved Observation of Magnetization Switching induced by Spin-Transfer in Magnetic Tunnel Junctions for MRAM. Thibaut Devolder1, Jun Hayakawa2,3, Kenchi Ito2, Hiromasa Takahashi2, Shoji Ikeda3, Paul Crozat1, Joo-von Kim1, Claude Chappert1 and Hideo Ohno3; 1IEF-UMR CNRS 8622, University Paris Sud, Orsay, France; 2Advanced Research Laboratory, Hitachi, Ltd, Tokyo, Japan; 3Laboratory for Nanoelectronics and Spintronics, RIEC-Tohoku University, Sendai, Japan.

3:00 PM BREAK

3:30 PM F8.6
Electron Energy-loss Spectroscopy of CoFeB/MgO/CoFeB Magnetic Tunnel Junctions. Judy Jeeyoung Cha1, J. C. Read2, William F. Egelhoff3, R. A. Buhrman1 and David A. Muller1; 1School of Applied and Engineering Physics, Cornell University, Ithaca, New York; 2Department of Physics, Cornell University, Ithaca, New York; 3Metallurgy Division, Materials Science and Engineering Laboratory, National Institute of Standards & Technology, Gaithersburg, Maryland.

3:45 PM F8.7
Highly Robust Thermal Stability of Metal-Rich Gd Nanocrystal Memory for High Density Flash Application. Chao-Sung Lai1, Jian-Yi Wong1, Jer-Chyi Wang3, Chin Ting Lin1, Hsing-Kan Peng1, Yu-Ching Fang2, Li Hsu2 and Hui-Chun Wang2; 1Electronic Engineering, Chang Gung University, Tao-Yuan, Taiwan; 2Science & Technology, Materials & Electro-Optics Research Division, Chung-Shan, Tao-Yuan, Taiwan; 3Nanya, Tao-Yuan, Taiwan.

4:00 PM F8.8
Temperature Dependence of Electrical Properties of NiO Thin Films for Resistive Random Access Memory. Ryota Suzuki1, Jun Suda1 and Tsunenobu Kimoto1,2; 1Department of Electronic Science and Engineering, Kyoto University, Kyoto, Japan; 2Photonics and Electronics Science and Engineering Center (PESEC), Kyoto University, Kyoto, Japan.

4:15 PM F8.9
Simulation of Resistance Switching Behavior in Oxide Thin Film Heterostructures. Sukwon Choi1, Joanna Meador1, Kevin Jiang1, Rozana Hussin2, Mohammad N Noman2, Paul A. Salvador1, Marek Skowronski1 and James A. Bain2; 1Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania; 2Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania.

4:30 PM F8.10
Abstract Withdrawn

4:45 PM F8.11
Nanostructured, Non-volatile Charge Trap Flash Memory Devices Based on Layer-by-layer Assembled Functional Nanoparticle/polyelectrolyte Multilayers. Inpyo Kim1, Jinhan Cho1, Jang-sik Lee1, Jeongju Park1, Chiyoung Lee1, Yong-mu Kim1, Hyunjung Shin1, Jaegab Lee1 and Frank Caruso2; 1School of Advanced Material Engineering, Kookmin University, Seoul, South Korea; 2Centre for Nanoscience and Nanotechnology, Department of Chemical and Biomolecular Engineering, The University of Melbourne, Melbourne, Victoria, Australia.

SESSION F9: Poster Session: Future Nonvolatile Memories II
Thursday Evening, March 27, 2008
8:00 PM
Salon Level (Marriott)


F9.1
Molecular Conductance Switch-on of Single Ruthenium Complex Molecules. Kyoungja Seo, Alexander V Konchenko, Junghyun Lee, Gyeong Sook Bang and Hyoyoung Lee; National Creative Research Initiative, Center for Smart Molecular Memory, Electronics and Telecommunications Research Institute (ETRI), Daejeon, South Korea.

F9.2
Grafted Assembly of Colloidal Ge Nanoparticles for Memory Device Applications. Mei Yin Chan1,2, Szu Min Tan1, Pooi See Lee1 and Vincent Ho2; 1Nanyang Technological Universty, Nanyang Avenue, Singapore; 2Chartered Semiconductor Manufacturing Ltd, 60 Woodlands Ind. Park D, Singapore.

F9.3
Effects on the Cu Film Deposited on Mercaptopropyltrimethoxysilane by Metal-organic Chemical Vapor Deposition of Iodine as a Catalyst in a Low Temperature. Heejung Park, Chiyoung Lee, Kwanwoo Lee and Jaegab Lee; Kookmin university, Seoul, South Korea.

F9.4
Memory Characteristics of ZnO Nanowire - CdTe Nanoparticle Nano Floating Gate Memory Device. Changjoon Yoon, Donghyuk Yeom, Jeongmin Kang, Dong-Young Jeong and Sangsig Kim; Department of Electrical Engineering, Korea University, Seoul, South Korea.

F9.5
Growth of Platinum Nanoparticles by Atomic Layer Deposition for Nonvolatile Memory Applications. Steven R Novak, Bongmook Lee and Veena Misra; Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina.

F9.6
Nonvolatile Memory Properties of Si-nanocluster Floating Gate Transistor-cell. Jeongho Kim, Eunkyeom Kim, Kyongmin Kim, Sung Hwan Won, Wan-Shick Hong and Kyoungwan Park; Dept. of Nano Science and Technology, University of Seoul, Seoul, South Korea.

F9.7
Nanostructural Pulse Laser Deposited Ag(Tl)SbS Semiconductor Thin Films for Optical Information Storage: Growth Dynamics, Structural and Electrical Properties. Halyna M. Khlyap1, Lyudmila N. Panchenko2 and Viktor Laptev3; 1Physics, University, Kaiserslautern, Germany; 2Physics, Sumy State University, Sumy, Ukraine; 3Institute of Physical Electronics, University of Stuttgart, Stuttgart, Germany.

F9.8
TEM Study on the Crystallization and Phase Transition Behavior of Annealed Ge-Bi-Te , Ge-Sn-Te Chalcogenide Thin Films for Phase Change Memory Material. Changwoo Sun1, Jeongyong Lee1 and Yongtae Kim2; 1Department of Material Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon, South Korea; 2Semiconductor Materials and Devices Laboratory, Korea Institute of Science and Technology, Seoul, South Korea.

F9.9
Reversible Electrical Resistance Switching in GeSbTe Thin Films: An Electrolytic Approach Without Amorphous-Crystalline Phase-Change. Ramanathaswamy Pandian, Bart J Kooi, George Palasantzas and Jeff Th. M. De Hosson; Applied Physics, University of Groningen, Groningen, Groningen, Netherlands.

F9.10
CVD of Amorphous GeTe Thin Films using Ge(II) Amidinate Precursors. Philip Chen, William Hunks, Matthias Stender, Tianniu Chen, Gregory Stuaf, Chongying Xu and Jeffrey Roeder; ATMI, Danbury, Connecticut.

F9.11
Germanium ALD/CVD Precursors for Deposition of Ge/GeTe Films William Hunks, Philip S. Chen, Tianniu Chen, Matthias Stender, Gregory T. Stauf, Leah Maylott, Chongying Xu and Jeffrey F. Roeder; ATMI, Danbury, Connecticut.

F9.12
Reproducible Electro-resistance Memory Effect in Ag/La0.67Sr0.33MnO3 Thin Films. Lina Huang, Bingjun Qu and Litian Liu; Institute of Microelectronics, Tsinghua University, Beijing, China.

F9.13
Investigation Of Interlayer Materials For Atomic Switching Device By Using Transition Metal Oxides. Masamitsu Haemori, Takahiro Nagata and Toyohiro Chikyow; Advanced Electronic Materials Center, National Institute for Materials Science, Tsukuba, Japan.

F9.14
Various Resistive Switching Types in NiO Thin Films. J. s. Choi1, I. r. Hwang1, S. h. Kim1, S. h. Jeon1, S. h. Hong1, J. h. Lee1, S. -o. Kang1, B. h. Park1, D. c. Kim2, M. j. Lee2, S. Seo2 and I. k. Yoo2; 1physics, Konkuk Univ., Seoul, South Korea; 2Samsung Advanced Institute of Technology, Seoul, South Korea.

F9.15
Effect of Pt/Al Top Electrode on Resistive Switching Properties of Atomic Layer Deposited TiO2 Thin Films. Seunghee Go and Jaegab Lee; School of Advanced Materials Engineering, kookmin university, Seoul, South Korea.

F9.16
Resistive Switching Properties of Metal-doped CoOx Layer. June Sik Kwak1, Young Ho Do1, Jin Pyo Hong1, Bae Ho Park2 and Hyun Sik Im3; 1Physics, Hanyang University, Seoul, South Korea; 2Physics, Konkuk University, Seoul, South Korea; 3Semiconductor Science, Dongguk University, Seoul, South Korea.

F9.17
Ferroelectric Media For Probe Storage Applications. Simon Buehlmann, Y. K. Kim, S. Hong and S. Oh; Samsung Advanced Institute of Technology, Giheung, South Korea.

F9.18
Current Conduction Mechanism for Non-volatile Memory Fabricated with Conductive Polymer Embedded Au Nano-crystals. Jong Dae Lee, Hyun Min Seung, Byeong-il Han, Gon Sub Lee and Jea-gun Park.  Nano SOI Process Laboratory, Hanyang University, Seoul, South Korea.



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