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L: Large-Area Electronics from Carbon Nanotubes, Graphene, and Related Noncarbon Nanostructures

Chairs

Manish Chhowalla		Rutgers University
John A. Rogers		University of Illinois, Urbana-Champaign
Carey M. Tanner		SRI International
Pagona Papakonstantinou		University of Ulster
Andrea C. Ferrari		University of Cambridge

---

* Invited paper

TUTORIAL


Properties and Applications of Carbon Nanotubes and Graphene

Sunday, November 29, 8:30 am-5:00 pm
Room 208, Hynes Convention Center

Carbon nanostructures have been the focus of research in recent years. The combination of remarkable mechanical properties and unique electronic properties of CNTs offers significant potential for revolutionary applications, not only in electronics devices, computing, and data storage technology, but also in chemical and biosensors, detectors, biomedical applications, nanoelectromechanical systems (NEMS), as tips in scanning probe microscopy (SPM) for imaging, and in a number of other areas. Thus the CNT synthesis, characterization, and applications touch upon all disciplines of science and engineering. The first part of this tutorial will provide an overview of the following topics: CNT properties, growth techniques with particular emphasis on CVD and plasma CVD, patterned growth, vertical alignment, challenges in controlling the diameter and chirality, separation methods that afford enrichment according to type (metallic vs. semiconducting), diameter, and chirality and handedness, along with spectroscopic and electronic characterization, scale-up issues, and challenges facing commercialization.

Graphene, a two-dimensional allotrope of carbon, has, for many different reasons, quickly emerged as one of the hottest topics in condensed matter research. The tutorial will review the basic properties of this new material and its potential impact on modern technology. Graphene is one atom thick, yet it can be seen under an ordinary optical microscope. It is an amazing conductor of electricity and heat, although its electronic properties do not fit the standard theory of metals - its electrons propagate as massless Dirac particles. Consequently, graphene conducts electricity with less energy loss than silicon, the platform of all modern electronics. Mechanically, despite its exceedingly large Young’s modulus and elastic stiffness - the only other material comparable in strength is diamond - it is also one of the softest (the only example of a metallic membrane). It can be used as an ultrasensitive nanomechanical resonator, in addition to being highly impermeable. Because of these amazing properties, many different companies are interested in developing graphene-based devices for a plethora of applications, from high-frequency transistors and photovoltaic devices to reversible hydrogen storage.

Instructors:
Fotios Papadimitrakopoulos, University of Connecticut
Antonio H. Castro Neto, Boston University
Kuei-Hsien Chen, National Taiwan University andAcademia Sinica, Taiwan
Chun Ning Lau, University of California, Riverside

SESSION L1: Chemically Derived Graphenes I
Monday Morning, November 30, 2009
Chair: Manish Chhowalla
Room 310 (Hynes)
8:30 AM *L1.1
Graphene-based Materials. R. S. Ruoff, Mechanical Engineering, University of Texas, Austin, Texas.

9:00 AM L1.2
Probing the De-oxidation and Electronic Structure of Graphene Oxide by in situ High Resolution X-ray Photoelectron Spectroscopy. Surbhi Sharma, Jeremy W. Hamilton and Pagona Papakonstantinou; School of Engineering, Nanotechnology and Integrated BioEngineering Centre, NIBEC, University of Ulster, Newtownabbey, United Kingdom.

9:15 AM L1.3
Evolution of Electrical, Chemical and Structural Properties of Graphene Oxide Upon Annealing. Cecilia Mattevi¹, Goki Eda¹, Stefano Agnoli², Steve Miller¹, Andre Mkhoyan³, Ozgurd Celik⁴, Daniel Mastrogiovanni⁴, Gaetano Granozzi², Eric Garfunkel⁴ and Manish Chhowalla¹; ¹Materials Science and Engineering, Rutgers University, Piscataway, New Jersey; ²Department of Chemical Science, University of Padova, Padova, Italy; ³Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota; ⁴Department of Chemistry and Chemical Biology, Rutgers University, Piscataway, New Jersey.

9:30 AM L1.4
Photothermal Deoxygenation of Graphene Oxide for Patterning and Distributed Ignition Applications. Scott Gilje¹, Sergey Dubin², Alireza Badakhshan³, Jabari Farrar¹, Stephen A. Danczyk³ and Richard B. Kaner²; ¹Aerospace Research Laboratories, Northrop Grumman Aerospace Systems, Redondo Beach, California; ²Department of Chemistry and Biochemistry and California NanoSystems Institute, University of California Los Angeles, Los Angeles, California; ³AeroPhysics Branch, Combustion Devices Group, Air Force Reserach Laboratory, Edwards Air Force Base, California.

9:45 AM L1.5
Infrared Absorption Study of the Thermal Reduction of Graphene Oxide. Muge Acik¹, Cecilia Mattevi², Geunsik Lee¹, SeongYong Park¹, Carlo Floresca¹, Adam Pirkle¹, Robert M. Wallace¹, Moon Kim¹, Kyeongjae Cho¹, Manish Chhowalla² and Yves Chabal¹; ¹Materials Science and Engineering, The University of Texas at Dallas, Dallas, Texas; ²Materials Science and Engineering, Rutgers - the State University of New Jersey, Piscataway, New Jersey.

10:00 AM BREAK

10:30 AM *L1.6
Electronic Transport in Chemically Derived Graphene. Klaus Kern, Nanoscale Science Department, Max Planck Institute for Solid State Research, Stuttgart, Germany; Ecole Polytechnique Federale de Lausanne, Lausanne, Switzerland.

11:00 AM L1.7
Ultra-Large Graphene Membranes as Flexible and Transparent Electronic Material. Hisato Yamaguchi, Goki Eda, Cecilia Mattevi, HoKwon Kim and Manish Chhowalla; Materials Science and Engineering, Rutgers University, Piscataway, New Jersey.

11:15 AM L1.8
Graphene as a Transparent Electrode. Ki-Bum Kim, Chang-Mook Lee and Jaewu Choi; Information Display, Kyung Hee University, Seoul, Korea, South.

11:30 AM L1.9
Fabrication of Large Area Graphene Sheets by Chemical Exfoliation for Transparent Conductive Films. Takeshi Fujii, Ryosuke Shimizu, Yoshiyuki Yonezawa and Yukimi Ichikawa; Electron Device Technology Center, Fuji Electric Advenced Technology, Hino-city, Japan.

11:45 AM L1.10
High Performance of Graphene-based Flexible Transparent Conducting Film by Chemical Doping. Ki Kang Kim¹, Alfonso Reina¹, Hyesung Park¹, Yumeng Shi² and Jing Kong¹; ¹Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts; ²School of Materials Science and Engineering, Nanyang Technological UniVersity, Nanyang, Singapore.

SESSION L2: Chemically Derived Graphenes II
Monday Afternoon, November 30, 2009
Chair: Rod Ruoff
Room 310 (Hynes)
1:30 PM *L2.1
Large-Area Graphene Films for Sensor, MEMs and RF Applications. Eric Snow, Naval Research Laboratory, Washington, District of Columbia.

2:00 PM L2.2
Development of Conductometric Sensors and Supercapacitors from Aqueous Suspensions of Functionalized Graphene. Xiaohong An¹, Trevor Simmons², Rakesh Shah³, Morris Washington¹, Saroj Nayak¹, Saikat Talapatra³ and Swastik Kar¹; ¹Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Troy, New York; ²Department of Chemistry and Chemical Biology, Rensselaer Polytechnic Institute, Troy, New York; ³Department of Physics, Southern Illinois University Carbondale, Carbondale, Illinois.

2:15 PM L2.3
Gas Sensors Based on Thermally Reduced Graphene Oxide. Ganhua Lu¹, Junhong Chen¹ and Leonidas Ocola²; ¹Department of Mechanical Engineering, University of Wisconsin-Milwaukee, Milwaukee, Wisconsin; ²Center for Nanoscale Materials, Argonne National Laboratory, Argonne, Illinois.

2:30 PM *L2.4
Exfoliation of Graphene in Common Solvents and Other Systems: The Route to Useful Nano-structured Materials? Jonathan N. Coleman, Paul King, Arlene O'Neill, Mustafa Lotya, Valeria Nicolosi, Zhenyu Sun, Shane Bergin, Fiona Blighe, Sukanta De, Umar Khan and Yenny Hernandez; Physics, Trinity College Dublin, Dublin, Ireland.

3:00 PM BREAK

3:30 PM *L2.5
Transparent Conducting Nanomaterials from Chemically Converted Graphene: Synthesis, Deposition and Selective Patterning. Yang Yang¹, Richard Kaner², Vincent Tung¹, Matthew Allen², Steven Jonas¹, Kitty Cha¹ and Jonathan Wassei²; ¹Materials Science and Engineering, University of California, Los Angeles, Los Angeles, California; ²Chemistry and Biochemistry, University of California, Los Angeles, Los Angeles, California.

4:00 PM L2.6
Electrical and Materials Characterization of Large Area, Transparent, Conductive Graphene Film Networks and Their Potential for Gas Sensing. Jason L. Johnson, Ashkan Behnam and Ant Ural; Electrical and Computer Engineering, University of Florida, Gainesville, Florida.

4:15 PM L2.7
Highly Sensitive Gas Sensors Using Graphene Thin Films as Sensing Materials. Jinwoo Lee, Byeonghyeon Kang, Kyongsoo Lee, Cheoljin Lee and Byeongkwon Ju; Electrical Engineering, Korea University, Seoul, Korea, South.

4:30 PM L2.8
New Insights into the Structure and Reduction of Graphite Oxide. Wei Gao, Lawrence B. Alemany, Lijie Ci and Pulickel M. Ajayan; Rice University, Houston, Texas.

4:45 PM L2.9
Oligo (Polyethylene Glycol) Functionalized Reduced Graphene Oxide and Its Water Solubility. Shifeng Hou¹, Robert D. Cuellari¹, Najeeb Hoshang H. Hakimi¹, Krutika Patel¹, Pratik Shah¹, Matthew Gorring² and Stefanie Brachfeld²; ¹Chemistry & Biochemistry, Montclair State University, Montclair, New Jersey; ²Department of Earth & Environmental Studies, Montclair State University, Montclair, New Jersey.

SESSION L3: Poster Session: Chemically Derived Graphenes III
Monday Evening, November 30, 2009
8:00 PM
Chair: Pagona Papakonstantinou
Exhibit Hall D (Hynes)

L3.1
Efficient Reduction of Graphite Oxide by Sodium Borohydride and its Effect on Electrical Conductance. Hyeon-Jin Shin^1,2, Ki Kang Kim², Anass Benayad¹, Seon-Mi Yoon¹, Hyeon Ki Park², In-Sun Jung¹, Mei Hua Jin², Hae-Kyung Jeong², Jong Min Kim¹, Jae-Young Choi¹ and Young Hee Lee²; ¹Samsung Advanced Institute of Technology, Samsung Electronics Co., LTD., Youngin-si, Korea, South; ²Sungkyunkwan Advanced Institute of Nanotechnology, Sungkyunkwan University, Suwon-si, Korea, South.

L3.2
Lateral Uniformity of Few Layers Graphene Grown on 4H-SiC by Nanoscale Current Measurements. Filippo Giannazzo¹, Sushant Sonde^2,1, Vito Raineri¹, Jean-Roch Huntzinger³, Antoine Tiberj³, Jean Camassel³, Mikael Syvaejaervi⁴ and Rositza Yakimova⁴; ¹CNR-IMM, Catania, 95121, Italy; ²Scuola Superiore di Catania, Catania, 95123, Italy; ³GES, CNRS and Université Montpellier 2, Montpellier, 34095 cedex 5, France; ⁴IFM, Linkoping University, Linkoping, Sweden.

L3.3
Dielectrophoretic Assembly of Graphene Oxide and Few-Layer Graphene. Brian R. Burg, Julian Schneider, Simon Maurer, Niklas C. Schirmer, Timo Schwamb and Dimos Poulikakos; Department of Mechanical and Process Engineering, ETH Zurich, Zurich, Switzerland.

L3.4
Strategies for Graphene Layers Achievement by SiC Sublimation Under Various Atmospheres. Loic Becerra¹, Aziz Zenasni¹, Pierre Mur¹, Denis Rouchon², Denis Mariolle², Nicolas Chevalier², Dominique Lafond², Gerard Lapertot³ and Thierry Poiroux⁴; ¹D2NT / L2MA, CEA-LETI, Grenoble, France; ²DPTS / SCPIO, CEA-LETI, Grenoble, France; ³INAC / SPSMS, CEA, Grenoble, France; ⁴D2NT / LDI, CEA-LETI, Grenoble, France.

L3.5
Focused Ion Beam Etching of Suspended Graphene Devices. Britt Baugher and Pablo Jarillo-Herrero; Physics, MIT, Cambridge, Massachusetts.

L3.6
Transport Measurements in Dual-gated Bilayer Graphene. Thiti Taychatanapat¹ and Pablo Jarillo-Herrero²; ¹Physics, Harvard University, Cambridge, Massachusetts; ²Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts.

L3.7
Large Area Single Crystal Substrates for Growing Graphene. Meifang Li¹, Jae Wook Shin² and Eric Chason¹; ¹Division of Engineering, Brown University, Providence, Rhode Island; ²Metallurgy Division, B-160/224, Mail Stop 8551, National Institute of Standards and Technology, Gaithersburg, 20899, Maryland.

L3.8
Inelastic Electron Scattering from Graphene on SiC(0001), Ni(111), and Polycrystalline Nickel. Roland J. Koch^1,2, Katharina Kloeckner¹, Thomas Haensel¹, S. Imad-Uddin Ahmed¹, Vladimir M. Polyakov³, Jing Kong², Thomas Seyller⁴ and Juergen A. Schaefer^1,5; ¹Institut für Physik and Institut für Mikro- und Nanotechnologien, TU-Ilmenau, Ilmenau, Germany; ²Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts; ³Fraunhofer Institute for Applied Solid State Physics, Freiburg, Germany; ⁴Institut für Physik der Kondensierten Materie, Universität Erlangen-Nürnberg, Erlangen-Nürnberg, Germany; ⁵Department of Physics, Montana State University, Bozeman, Montana.

L3.9
Abstract Withdrawn

L3.10
Graphene Growth Based on Dissolution and Segregation of C in Ni. Ageeth A. Bol, TJ Watson Research Center, IBM, Yorktown Heigths, New York.

L3.11
A Magneto-Catalytic Technique for Writing Complex Patterns in Graphene. Lutfiye Bulut and Robert H. Hurt; Brown University, Providence, Rhode Island.

L3.12
Electrochemical Synthesis of CdSe Quantum Dot Array on Graphene Basal Plane using Mesoporous Silica Thin Film Templates. Yong Tae Kim¹, Jung Hee Han², Byung Hee Hong^1,2 and Young-Uk Kwon^1,2; ¹Chemistry, BK-21 School of Chemical Materials Science, Sungkyunkwan University, Suwon, Korea, South; ²Chemistry, SKKU Advanced Institute of Nanotechnology, Sungkyunkwan University, Suwon, Korea, South.

L3.13
Formation of Graphene Nanostructures on Vicinal SiC(000-1) Surfaces. Chenda Srey¹, Seigi Mizuno² and Satoru Tanaka¹; ¹Applied Quantum Physics, Kyushu Univ., Fukuoka, Japan; ²Molecular and Material Sciences, Kyushu Univ., Fukuoka, Japan.

L3.14
Morphology of Graphene Surfaces on Hydrophobic/Hydrophilic Domain Nanopatterns. Takahiro Tsukamoto and Toshio Ogino; Yokohama National University, Yokohama, Japan.

L3.15
Electric Transport in Epitaxial Graphene on Vicinal SiC Substrate with Periodic Atomic-scale Facets. Shunsuke Odaka^1,2,3, Hisao Miyazaki^1,3, Akinobu Kanda^3,4, Kouhei Morita⁵, Satoru Tanaka⁵, Yasumitsu Miyata⁶, Hiromichi Kataura⁶, Kazuhito Tsukagoshi^1,3,6 and Yoshinobu Aoyagi^3,7; ¹MANA, NIMS, Tsukuba, Japan; ²Tokyo Institute of Technology, Yokohama, Japan; ³JST-CREST, Kawaguchi, Japan; ⁴Institute of Physics and TIMS, University of Tsukuba, Tsukuba, Japan; ⁵Kyushu University, Fukuoka, Japan; ⁶AIST, Tsukuba, Japan; ⁷Ritsumeikan University, Kusatsu, Japan.

L3.16
Graphene-on-insulator Substrates by In-place Bonding of Graphene Grown on Si/SiO₂/Metal Templates. Katherine L. Saenger, James C. Tsang, Jack O. Chu, Ageeth A. Bol, Conal E. Murray and Alfred Grill; IBM T.J. Watson Research Center, Yorktown Heights, New York.

L3.17
Graphene Nanoelectronic Devices in Superconducting Regime. Michele Zaffalon¹, Joel I. Wang^1,2 and Pablo Jarillo-Herrero¹; ¹Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts; ²School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts.

L3.18
Photoluminescence in Graphene Oxide Suspensions. Cecilia Mattevi, Goki Eda, Hisato Yamaguchi and Manish Chhowalla; Materials Science and Engineering, Rutgers University, Piscataway, New Jersey.

L3.19
Abstract Withdrawn

L3.20
On the Formation Graphane from Graphene: A Molecular Dynamics Study. Sergio B. Legoas², Pedro Autreto¹, Marcelo Flores¹ and Douglas S. Galvao¹; ¹Applied Physics, State University of Campinas, Campinas, Sao Paulo, Brazil; ²Centro de Ciencias e Tecnologia, Federal University of Roraima, Boa Vista, Roraima, Brazil.

L3.21
Local Manipulation of Graphene Using Atomic Force Microscopy: Effects on Electronic Properties. Romaneh Jalilian^1,2, Luis A. Jauregui^2,4, Caleb Roecker³, John Coy², Mehdi M. Yazdanpanah^5,6, Robert W. Cohn⁶, Igor Jovanovic³ and Yong P. Chen^1,2,4; ¹Department of Physics, Purdue University, West Lafayette, Indiana; ²Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana; ³School of Nuclear Engineering, Purdue University, West Lafayette, Indiana; ⁴School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana; ⁵NaugaNeedles LLC, Louisville, Kentucky; ⁶Department of Electrical engineering, University of Louisville, Louisville, Kentucky.

L3.22
Measurement of Carrier Recombination Dynamics in Epitaxially-Grown and CVD-Grown Graphene. Jared Strait¹, Paul George¹, Haining Wang¹, Shriram Shivaraman¹, Virgil Shields¹, Mvs Chandrashekhar¹, Carlos Ruiz-Vargas², Farhan Rana¹, Michael Spencer¹ and Jiwoong Park²; ¹Electrical and Computer Engineering, Cornell University, Ithaca, New York; ²Chemistry and Chemical Biology, Cornell University, Ithaca, New York.

L3.23
Ultrafast Hot Phonon Dynamics in CVD-Grown and Epitaxially-Grown Graphene. Haining Wang, Jared H. Strait, Paul A. George, Shriram Shivaraman, Virgil B. Shields, Mvs Chandrashekhar, Carlos S. Ruiz-Vargas, Farhan Rana, Michael G. Spencer and Jiwoong Park; Cornell University, Ithaca, New York.

L3.24
Synthesis of Multilayer Graphene and its Electrical Properties. Daiyu Kondo^1,2,3, Katsunori Yagi¹, Motonobu Sato^1,2,3, Mizuhisa Nihei^1,2,3 and Shintaro Sato^1,2,3; ¹Fujitsu Laboratories Ltd., Atsugi, Japan; ²Fujitsu Limited, Atsugi, Japan; ³CREST-JST, Atsugi, Japan.

L3.25
The Direct Fabrication of Mechanically Stable Reduced Graphene Oxide/Multi-walled Carbon Nanotube Double Layer Thin Films as a Transparent Electrode. Young-Kwan Kim and Dal-Hee Min; chemistry, KAIST, Deajeon, Korea, South.

 

SESSION L4: Electronics from Solution Exfoliated Graphite I
Tuesday Morning, December 1, 2009
Chair: Mark Hersam
Room 310 (Hynes)
8:30 AM *L4.1
Graphene and Its Chemical Derivatives. Kostya Novoselov, School of Physics and Astronomy, University of Manchester, Manchester, United Kingdom.

9:00 AM L4.2
Large-scale Exfoliation of Graphite into Stable Aqueous Solutions of Graphene Using a Non-covalent Functionalization. Xiaohong An¹, Trevor Simmons², Morris Washington¹, Saroj K. Nayak¹, Saikat Talapatra³ and Swastik Kar¹; ¹Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Troy, New York; ²Department of Chemistry and Chemical Biology, Rensselaer Polytechnic Institute, Troy, New York; ³Department of Physics, Southern Illinois University Carbondale, Carbondale, Carbondale, Illinois.

9:15 AM L4.3
Synthesis of Large Graphene Nanostructures Through Solution Chemistry. Liang-shi Li and Xin Yan; Chemistry Department, Indiana University, Bloomington, Indiana.

9:30 AM L4.4
Low Temperature Highly-yielded Preparation of Fully Exfoliated Graphite. Vladimir Novikov and Sergei Kirik; SSPA “Scientific-Practical Material Research Centre of NAS of Belarus, Minsk, Belarus.

9:45 AM L4.5
Large Area Deposition of Graphene Thin Films by Langmuir-Blodgett Assembly. HoKwon Kim, Cecilia Mattevi, Goki Eda, Hisato Yamaguchi and Manish Chhowalla; Materials Science and Engineering, Rutgers, The State University of New Jersey, Piscataway, New Jersey.

10:00 AM BREAK

10:30 AM *L4.6
Solutions of Negatively Charged Graphene Sheets. Alain Penicaud¹, Cristina Valles^5,1, Amelie Catheline¹, Carlos Drummond¹, Hassan Saadaoui¹, Cecile Zakri¹, Maryse Maugey¹, Clascidia Furtado^2,1, Luca Ortolani^4,3 and Marc Monthioux³; ¹CNRS-CRPP, University of Bordeaux, Pessac, France; ²Centro de desenvolvimento da tecnologia nuclear, CDTN-CNEN, Belo Horizonte, Brazil; ³CEMES, CNRS, Toulouse, France; ⁴CNR-IMM Bologna, University of Bologna, Bologna, Italy; ⁵Instituto de Carboquimica, CSIC, Zaragoza, Spain.

11:00 AM L4.7
Highly Ordered Monolayer Films of Graphene Nanosheet by Self-assembly at the Liquid-liquid Interface. Sanjib Biswas and Lawrence T. Drzal; Chemical Engineering and Materials Science, Michigan State University, East Lansing, Michigan.

11:15 AM L4.8
Exfoliation and Sorting of Graphene in Aqueous Solutions via Density Gradient Ultracentrifugation. Felice Torrisi¹, Francesco Bonaccorso¹, Calogero Sciascia², Giulia Privitera¹, Tawfique Hasan¹ and Andrea C. Ferrari¹; ¹Department of Engineering, University of Cambridge, Cambridge, United Kingdom; ²Department of Physics, Politecnico di Milano, Milano, MI, Italy.

11:30 AM L4.9
Graphene Dispersion at High Concentrations and Formation of Liquid Crystals. Natnael Behabtu^1,3, Jay R. Lomeda^2,3, Micah J. Green^1,3, Amanda Higginbotham^2,3, Nicholas G. Parra-Vasquez^1,3, Dmitri Kosynkin^2,3, Ellina Kesselman⁴, Judith Schmidt⁴, Yeshayahu Talmon⁴, James M. Tour^2,3 and Matteo Pasquali^1,2,3; ¹Chemical Engineering, Rice University, Houston, Texas; ²Chemistry, Rice University, Houston, Texas; ³Smalley Institute for nanoscale science and technology, Rice University, Houston, Texas; ⁴Chemical Engineering, Technion-Israel Institute of Technology, Haifa, Israel.

11:45 AM L4.10
Dispersions of Exfoliated Hexagonal Boron Nitride Nanosheets. Yi Lin¹ and John W. Connell²; ¹National Institute of Aerospace, Hampton, Virginia; ²Advanced Materials and Processing Branch, NASA Langley Research Center, Hampton, Virginia.

SESSION L5: Electronics from Solution Exfoliated Graphite II
Tuesday Afternoon, December 1, 2009
Chair: Andrea Ferrari
Room 310 (Hynes)

1:30 PM *L5.1
Chemically Tailored Carbon-Based Nanoelectronic Materials and Devices. Mark C. Hersam, Materials Science and Engineering, Northwestern University, Evanston, Illinois.

2:00 PM L5.2
A Breakthrough Toward Wafer-size Graphene Transfer. Akihiro Hashimoto¹, Hiromitsu Tearsaki¹, Kouhei Morita², Satoru Tanaka² and Hiroki Hibino³; ¹Graduate School of Electrical & Electronics Engineering, University of Fukui, Fukui, Japan; ²Applied Quantum Physics & Nuclear Engineering, Kyushu University, Fukuoka, Japan; ³NTT Basic Research Laboratories, NTT Corporation, Atsugi, Japan.

2:15 PM L5.3
Natural Dye Sensitized Solar Cells based on Graphene as Counter Electrode. Francesco Bonaccorso¹, Giuseppe Calogero², Pietro G. Gucciardi², Giulia Privitera¹, Gaetano Di Marco² and Andrea C. Ferrari¹; ¹Engineering, Cambridge University, Cambridge, Cambridgeshire, United Kingdom; ²Istituto per i Processi Chimico-Fisici, Messina, Italy.

2:30 PM L5.4
Transferring and Multi-stage Cutting Graphene Patterns. Li Song¹, Lijie Ci¹, Deep Jariwala², Wei Gao¹, Ana-Laura Elias¹, Mauricio Mauricio Terrones³ and Pulickel M. Ajayan¹; ¹Department of Mechanical Engineering and Materials Science, Rice University, Houston, Texas; ²Department of Metallurgical Engineering, IT-BHU, Varanasi, India; ³Advanced Materials Department, IPICYT, San Luis Potosí, Mexico.

2:45 PM L5.5
Electronic Devices Based on Graphene Ribbons Produced by Unzipping of Carbon Nanotubes. Alexander Sinitskii, Ayrat Dimiev, Dmitry V. Kosynkin and James M. Tour; Chemistry, Rice University, Houston, Texas.

3:00 PM BREAK

3:30 PM *L5.6
Effect of Functionalized Single Wall Carbon Nanotube and Graphene Oxide Electrodes on the Performance of Polymer Photovoltaic Devices. Yun-Yue Lin¹, Kun-Hua Tu¹, Chun-Wei Chen¹ and Manish Chhowalla²; ¹Materials Science and Engineering, National Taiwan University, Taipei, Taiwan; ²Materials Science and Engineering, Rutgers University, Piscataway, New Jersey.

4:00 PM L5.7
Using Large Area Graphene as an Electrode for Photovoltaic Application. Ping k. Loh, Yu Wang, Xiaohong Chen and Shuai Wang; chemistry, national university of singapore, Singapore, Singapore.

4:15 PM L5.8
Chemical Vapor Deposition of Single- and Few-layer Graphene Film and its Application in Solar Cells. Lewis Gomez De Arco¹, Yi Zhang¹, Cody Schlenker², Koungmin Ryu¹, Mark Thompson² and Chongwu Zhou¹; ¹Electrical Engineering, University of Southern California, Los Angeles, California; ²Chemistry, University of Southern California, Los Angeles, California.

4:30 PM L5.9
Large-Scale Directed Assembly and Rapid Characterization of Carbon Nanotube and Graphene Devices. Aravind Vijayaraghavan¹, Frank Hennrich¹, Christoph W. Marquardt¹, Ninette Stuerzl¹, Calogero Sciascia^2,3, Simone Dehm¹, Sharali Malik¹, Andrea C. Ferrari² and Ralph Krupke^1,4; ¹Institut für Nanotechnologie, Forschungszentrum Karlsruhe, Karlsruhe, Germany; ²Engineering Department, University of Cambridge, Cambridge, United Kingdom; ³INFM-CNR Physics Department, Politecnico di Milano,, Milano, Italy; ⁴DFG Center for Functional Nanostructures (CFN), Karlsruhe, Germany.

4:45 PM L5.10
Large Area Single- and Bi-layer Graphene on Single Crystalline Nickel by Chemical Vapor Deposition. Yi Zhang, Lewis Gomez De Arco and Chongwu Zhou; University of Southern California, Los Angeles, California.

 

SESSION L6: Poster Session: Graphene
Tuesday Evening, December 1, 2009
8:00 PM
Chair: Chun-Wei Chen
Exhibit Hall D (Hynes)
L6.1
Graphene as Saturable Absorber for Ultrafast Lasers. Daniel Popa, Felice Torrisi, Zhipei Sun, Tawfique Hasan, Fengqiu Wang, Francesco Bonaccorso and Andrea Ferrari; Department of Engineering, University of Cambridge, Cambridge, Cambridge, United Kingdom.

L6.2
All Graphene Electromechanical Switch Fabricated by Chemical Vapor Deposition. Kaveh M. Milaninia¹, Alfonso Reina¹, Jing Kong² and Marc A. Baldo²; ¹Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts; ²Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, California.

L6.3
Tuning the Electronic Structure of Graphene Nanoribbons by Chemisorption. Felipe Cervantes Sodi, Gabor Csanyi, Stefano Piscanec and Andrea C. Ferrari; Engineering Department, University of Cambridge, Cambridge, Cambridgeshire, United Kingdom.

L6.4
Conductance Modulation Upon Layer Stacking in Graphene Nanoribbons. Kirti Kant Paulla and Amir A. Farajian; Mechanical and Materials Engineering, Wight State University, Dayton, Ohio.

L6.5
Gating Effects and Three-terminal Quantum Transport in Multi-layer Graphene Nanoribbons. Amir A. Farajian, Mechanical and Materials Engineering, Wright State University, Dayton, Ohio.

L6.6
Fabrication of Graphene Devices with a Helium Ion Beam. Max Lemme², David C. Bell¹, Lewis Stern³, Britt Baugher⁴, Pablo Jarillo-Herrero⁴, Jimmy Williams² and Charels M. Marcus²; ¹School of Enginnering and Applied Sciences, Harvard University, Cambridge, Massachusetts; ²Department of Physics, Harvard University, Cambridge, Massachusetts; ³ALIS Business Unit, Carl Zeiss SMT, Peabody, Massachusetts; ⁴Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts.

L6.7
Quantum States in Graphene-Based Josephson Junctions. Steve Carabello, Joseph Lambert, Zechariah Thrailkill and Roberto Ramos; Physics, Drexel University, Philadelphia, Pennsylvania.

L6.8
Few Layer Graphene Based CO and NO2 Gas Sensors. Rakesh K. Joshi, Gomez Humberto, Kumar Ashok, Farah Alvi and Denis Kitenge; Mechanical Engineering, University of South Florida, Tampa, Florida.

SESSION L7: Graphene by Chemical Vapor Deposition
Wednesday Morning, December 2, 2009
Chair: Carey Tanner
Room 310 (Hynes)

8:30 AM *L7.1
Graphene Synthesis and Its Device Application for Future Carbon Based Electronics. Jae-Young Choi¹, Seon-Mi Yoon¹, Hyeon-Jin Shin¹, Byung H. Hong², Ji-Beom Yoo², Young Hee Lee², Sang Yoon Lee¹ and Jong Min Kim¹; ¹Samsung Advanced Institute of Technology, Yongin-si, Gyeonggi-do, Korea, South; ²Sungkyunkwan University, Suwon, Gyeonggi-do, Korea, South.

9:00 AM L7.2
Patterned Growth of Graphene on Epitaxial Catalyst. Hiroki Ago^1,2,3, Izumi Tanaka¹, Masaharu Tsuji^1,2 and Ken-ichi Ikeda²; ¹Inst. Mater. Chem. Eng., Kyushu University, Fukuoka, Japan; ²Grad. Schl. Eng. Sci., Kyushu University, Fukuoka, Japan; ³PRESTO-JST, Kawasaki, Japan.

9:15 AM L7.3
Large-Area Patterning of Arrays of Graphene Nanostructures for Electronics and Optoelectronics Applications. Nathaniel Safron and Michael S. Arnold; Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin.

9:30 AM L7.4
Complete One-pot Conversion of Graphite Crystals to High Quality Graphene via Supercritical Fluid Exfoliation. Dinesh Rangappa¹, Koji Sone¹, Mingsheng Wang², Ujjal Gautam², Dmitri Golberg² and Itaru Honma¹; ¹Energy Technology Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki, Japan; ²MANA, National Institute for Materials Science (NIMS), Tsukuba, Ibaraki, Japan.

9:45 AM L7.5
Mechanisms of Large-Scale Graphene Growth on Ruthenium. Eli Sutter, Peter Albrecht and Peter Sutter; Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York.

10:00 AM BREAK

10:30 AM *L7.6
Engineering Silicon and Graphene Nanosystems via Nanowire Lithography. Alan Colli, Nokia Research Centre, Cambridge, United Kingdom.

11:00 AM L7.7
Wafer Scale Epitaxial Graphene Growth on SiC for High Frequency FETs. Christos Dimitrakopoulos, Alfred Grill, Yu-ming Lin, Marcus Freitag, Zhihong Chen, Yanning Sun, Keith A. Jenkins, Damon Farmer, John A. Ott, Robert Wisnieff and Phaedon Avouris; IBM Research, T. J. Watson Research Center, Yorktown Heights, New York.

11:15 AM L7.8
A New Mechanism for Growth of Graphene on SiC. Weijie Lu¹, John Boeckl², Kurt Eying², Larry Grazulis², Roland Barsosa¹, Tiffany R. Crenshaw¹ and William C. Mitchel²; ¹Department of Chemistry, Fisk University, Nashville, Tennessee; ²Materials and Manufacturing Directorate, Air Force Research Laboratory, NashvilleWright Patterson AFB, Ohio.

11:30 AM L7.9
Optimizing Graphene Quality on Metals by Directly Observing Growth. Kevin F. McCarty¹, Elena Loginova¹, Peter J. Feibelman², Shu Nie¹, Konrad Thurmer¹ and Norm C. Bartelt¹; ¹Sandia National Laboratories, Livermore, California; ²Sandia National Laboratories, Albuquerque, New Mexico.

11:45 AM L7.10
Electronic Interaction of Graphene with Transition Metals. Peter Sutter, Mark S. Hybertsen, Jurek T. Sadowski and Eli Sutter; Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York.

SESSION L8: Single-Walled Nanotube Networks I
Wednesday Afternoon, December 2, 2009
Chair: Husnu Emrah Unalan
Room 310 (Hynes)
1:30 PM *L8.1
Solution Deposited Self-sorted, Aligned Carbon Nanotube Networks for Electronic Devices. Zhenan Bao, Stanford University, Stanford, California.

2:00 PM L8.2
Inkjet Printing of Carbon Nanotubes for Large Area Transparent Conducting Films. Tianming Wang, Michael Roberts, Ian A. Kinloch and Brian Derby; Materials Science, University of manchester, Manchester, United Kingdom.

2:15 PM L8.3
Highly Conductive and Transparent Nanotube-Filled Composite Thin Films. Yong Tae Park¹, Aaron Ham¹ and Jaime Grunlan^1,2,3; ¹Mechanical Engineering, Texas A&M University, College Station, Texas; ²Materials Science and Engineering, Texas A&M University, College Station, Texas; ³Chemical Engineering, Texas A&M University, College Station, Texas.

2:30 PM L8.4
Single Walled Carbon Nanotube Schottky Diode via Selective Electrochemical Metal Deposition. Hyunseob Lim and Hee Cheul Choi; POSTECH, Pohang, Korea, South.

2:45 PM L8.5
Flexible, Spin-coated Carbon Nanotube Electrodes for High-performance n- and p-type Organic Transistors. Sondra Hellstrom¹ and Zhenan Bao²; ¹Applied Physics, Stanford University, Stanford, California; ²Chemical Engineering, Stanford University, Stanford, California.

3:00 PM BREAK

3:30 PM *L8.6
Ink-jet Printing of Carbon Nanotubes Towards Applications -From Laboratory Experiments to a Pilot Scale. Tero Mustonen^1,2, Krisztian Kordas², Geza Toth² and Heli Jantunen²; ¹Emerging Competencies / Printing Technologies, Ciba Finland Oy, part of BASF, Raisio, Finland; ²Microelectronics and Materials Physics Laboratories, Department of Electrical and Information Engineering, and EMPART Research Group of Infotech Oulu, University of Oulu, Oulu, Finland.

4:00 PM L8.7
Inkjet Printing of Stripe-Featured Single-Walled Carbon Nanotube Thin Film Transistors. Jiantong Li¹, Minni Qu², Zhiying Liu^1,3, Ana Lopez Cabezas^1,3, Botao Shao^1,3, Tomas Unander⁴, Zhijun Qiu², Zhi-Bin Zhang¹, Jia Zhou², Yiping Huang², Li-Rong Zheng^1,3, Hans-Erik Nilsson⁴ and Shi-Li Zhang^1,2,3; ¹Department of Microelectronics and Applied Physics, Royal Institute of Technology, Kista, Stockholm, Sweden; ²State Key Lab of ASIC & System, Fudan University, Shanghai, China; ³iPack Vinn Excellent Center, Royal Institute of Technology, Kista, Stockholm, Sweden; ⁴Department of Information Technology and Media, Mid-Sweden University, Sundsvall, Sweden.

4:15 PM L8.8
CNT-based Infrared Photovoltaic Detectors with a Near Infrared Specific Detectivity of >10¹¹ cm-Hz^½/W. Jeramy D. Zimmerman¹, Christine M. Austin¹ and Stephen R. Forrest^1,2; ¹Department of Physics, University of Michigan, Ann Arbor, Michigan; ²Departments of Materials Science, and Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan.

4:30 PM L8.9
Individually Deposited Carbon Nanotubes Films. Jinwoo Sung and Cheolmin Park; Materials Science and Engineering, Yonsei university, Seoul, Korea, South.

4:45 PM L8.10
Highly Flexible and Transparent Polymer Light Emitting Devices with Single-walled Carbon Nanotube Electrodes. Zhibin Yu, Zhitian Liu and Qibing Pei; Materials Science and Engineering, UCLA, Los Angeles, California.

SESSION L9: Poster Session: Single-Walled Nanotube Networks II
Wednesday Evening, December 2, 2009
8:00 PM
Chair: Alan Colli
Exhibit Hall D (Hynes)

L9.1
Photocurrent of CdSe Nanocrystals on Single-walled Carbon Nanotube-field Effect Transistor. Seung Yol Jeong^1,2 and Young Hee Lee²; ¹Nanocarbon Materials Research Group, Korea Electrotechnology Research Institute, Changwon, Korea, South; ²Physics, Sungkyunkwan University, Suwon, Korea, South.

L9.2
Work Function Engineering of Transparent Conductive Films based on Graphene and Carbon Nanotube. Seong Jun Kang¹, Yoojin Song¹, Yeonjin Yi^1,2, Won Mook Choi³, Seon-Mi Yoon³ and Jae-Young Choi³; ¹Center for Materials Measurement, Korea Research Institute of Standards and Science, Daejeon, Korea, South; ²Nano Surface Science, Korea University of Science and Technology, Daejeon, Korea, South; ³Display Laboratory, Samsung Advanced Insitute of Technology, Suwon, Korea, South.

L9.3
Template-free Solution Growth of Highly Regular, Crystal Orientation Ordered C60 Nanorod Bundles. Louzhen Fan and Yang Zhang; Department of Chemistry, Beijing Normal University, Beijing, China.

L9.4
1/f Noise Behaviors with the Hysteresis of Ambi-polar CNT Field Effect Transistors. Min Kyu Joo¹, Un Jeong Kim³, Doyoung Jang^1,2, Yonha Kim¹ and Gyu Tae Kim¹; ¹School of Electrical Engineering, Korea University, Seoul, Korea, South; ²School of Electrical Engineerging, IMEP - LAHC INP Grenoble - Minatec, Grenoble, France; ³Frontier Research Laboratory, Samsung Advanced Institute of Technology, Yongin, Korea, South.

L9.5
Bioinspired Assembly of Carbon Nanostructures for Large Scale Applications. Zhiping Xu and Markus J. Buehler; Civil and Environmental Engineering, MIT, Cambridge, Massachusetts.

L9.6
Ultra High Density Aligned Carbon Nanotube based Field Effect Transistors and Air Stable N-type Metal Contact for Integrated Circuit Applications. Chuan Wang, Koungmin Ryu, Alexander Badmaev, Jialu Zhang and Chongwu Zhou; Electrical Engineering, University of Southern California, Los Angeles, California.

L9.7
Highly Aligned ``All-Metallic” Single-wall Carbon Nanotube Architectures for Nanoscale Interconnect. Young-Lae Kim¹, Swastik Kar² and Yung Joon Jung³; ¹Department of Electrical and Computer Engineering, Northeastern University, Boston, Massachusetts; ²Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Troy, New York; ³Department of Mechanical and Industrial Engineering, Northeastern University, Boston, Massachusetts.

L9.8
Simulation of the One-dimensional Random Percolation Networks. Pil Soo Kang, Siegmar Roth and Gyu Tae Kim; School of Electrical Engineering, Korea University, Seoul, Korea, South.

L9.9
A Scanning Probe Microscopy Study on the Actuation Mechanisms of Nanotube Switches. Peter Ryan, Mechanical Engineering, Northeastern University, Boston, Massachusetts.

L9.10
Conformable Patch Antenna Array for Energy Harvesting. Akshat C. Patel², Miral P. Vaghela², Hassan Bajwa² and Prabir K. Patra¹; ¹Mechanical Engineering, University of Bridgeport, Bridgeport, Connecticut; ²Electrical Engineering, University of Bridgeport, Bridgeport, Connecticut.

L9.11
Abstract Withdrawn

L9.12
Integration of Carbon Nanotube Arrays in Lab-on-a-chip System for Blood Analyses Separation and Detection.  Ashish Mathur, Susanta Sinha Roy and Jim McLaughlin; NIBEC, University of Ulster, Newtownabbey, United Kingdom.

SESSION L10: Single-Walled Nanotube Networks III
Thursday Morning, December 3, 2009
Chair: Jonathan Coleman
Room 310 (Hynes)
8:00 AM *L10.1
Electrical Transport in Carbon Nanotube Network FETs and Transparent Conductors - from Sparse Networks to Dense Films. Michael D. McGehee¹, Michael W. Rowell¹, Mark A. Topinka¹, Sondra L. Hellstrom³, Zhenan Bao³, David Goldhaber-Gordon², David S. Hecht⁴ and George Gruner⁴; ¹Materials Science and Engineering, Stanford University, Stanford, California; ²Physics, Stanford University, Stanford, California; ³Chemical Engineering, Stanford University, Stanford, California; ⁴Physics and Astronomy, Stanford University, Los Angeles, California.

8:30 AM L10.2
Local Bottom Gating for High Performance Carbon Nanotube Array Transistors. Aaron D. Franklin, George S. Tulevski, James B. Hannon and Zhihong Chen; T. J. Watson Research Center, IBM Research, Yorktown Heights, New York.

8:45 AM L10.3
Pushing the Performance Limits of Transparent, Conducting Carbon Nanotube Films: Role of Nanotube Length and Tube-tube Bundling. Bhupesh Chandra, George Tulevski, Ali Afzali-Ardakani and Teresita O. Graham; IBM T.J. Watson Research Center, Yorktown Heights, New York.

9:00 AM *L10.4
Advanced Fiber Lasers by Carbon Nanotube Saturable Absorbers. Aleksey G. Rozhin, Zhipei Sun, Fengqiu Wang and Andrea C. Ferrari; Department of Engineering, University of Cambridge, Cambridge, United Kingdom.

9:30 AM L10.5
Conductive Transparent Single-Walled Carbon Nanotube Films: Integration with Organic Photovoltaic and CdTe Devices. Brian A. Larsen, Jeremy D. Bergeson, Lynn M. Gedvilas, Robert C. Tenent, Teresa M. Barnes and Jeffrey L. Blackburn; National Renewable Energy Laboratory, Golden, Colorado.

9:45 AM BREAK

10:15 AM *L10.6
Alignment Controlled Growth of Single Walled Carbon Nanotubes on Quartz Substrates. Jianliang Xiao¹, Simon Dunham³, Ping Liu⁴, Yongwei Zhang^5,4, Coskun Kocabas⁷, Yonggang Huang^1,2 and John Rogers^3,6; ¹Mechanical Engineering, Northwestern University, Evanston, Illinois; ²Civil & Environmental Engineering, Northwestern University, Evanston, Illinois; ³Materials Science and Engineering, University of Illinois, Urbana, Illinois; ⁴Institute of High Performance Computing, Singapore, Singapore; ⁵Materials Science and Engineering, National University of Singapore, Singapore, Singapore; ⁶Beckman Institute and Seitz Materials Research Laboratory, University of Illinois, Urbana, Illinois; ⁷Chemistry and Chemical Biology, Harvard University, Cambridge, Massachusetts.

10:45 AM L10.7
Silicon on Insulator Structures used to Guide the Surface Bound Growth of Carbon Nanotubes for Transistor Devices. Arthur M. Blackburn¹, Simone Pisana², David A. Williams¹ and Stephan Hofmann³; ¹Hitachi Cambridge Laboratory, Hitachi Europe Ltd., Cambridge, United Kingdom; ²San Jose Research Center, Hitachi Global Storage Technologies, San Jose, California; ³Department of Engineering, University of Cambridge, Cambridge, United Kingdom.

11:00 AM L10.8
Single-Walled Carbon Nanotube Chemical Sensors Integrated on to CMOS Circuitry for Environmental Monitoring. Chia-Ling Chen¹, Niksa Valim¹, Chih-Feng Yang¹, Vinay Agarwal², Sameer Sonkusale², Ahmed Busnaina³, Michelle Chen⁴ and Mehmet R. Dokmeci¹; ¹Electrical and Computer Engineering, Northeastern University, Boston, Massachusetts; ²Electrical and Computer Engineering, Tufts University, Boston, Massachusetts; ³Mechanical and Industrial Engineering, Northeastern University, Boston, Massachusetts; ⁴Physics, Simmons College, Boston, Massachusetts.

11:15 AM L10.9
Sorting Achiral SWCNTs Out Using Graphene Membranes Nanosieves. Luca Ortolani¹, Marc Monthioux² and Vittorio Morandi¹; ¹CNR IMM-Bologna, Bologna, Italy; ²CNRS CEMES, Toulouse, France.


SESSION L11: Single-Walled Nanotube Networks IV
Thursday Afternoon, December 3, 2009
Chair: Tero Mustonen
Room 310 (Hynes)
1:30 PM *L11.1
Metal Nanowire Mesh Transparent Electrodes. Peter Peumans, Electrical Engineering, Stanford University, Stanford, California.

2:00 PM L11.2
Zinc Oxide Nanowire Networks for Macroelectronic Devices. Husnu E. Unalan¹, Yan Zhang², Pritesh Hiralal², Sharvari Dalal², Daping Chu², Goki Eda³, Ken Teo², Manish Chhowalla³, William Milne² and Gehan Amaratunga²; ¹Metallurgical and Materials Engineering, Middle East Technical University, Ankara, Turkey; ²Electrical Engineering, University of Cambridge, Cambridge, United Kingdom; ³Materials Science and Engineering, Rutgers University, Piscataway, New Jersey.

2:15 PM L11.3
Generic Approaches towards Large Scale Nanowire Assembly. Zhiyong Fan^1,2, Johnny C. Ho^1,2, Toshitake Takahashi^1,2, Zachery A. Jacobson^1,2, Roie Yerushalmi^1,2, Kuniharu Takei^1,2 and Ali Javey^1,2; ¹Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, California; ²Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California.

2:30 PM L11.4
A VLSI Technology for Vertical Nanotubes. Shanmugamurthy Lakshmanan¹, Alokik Kanwal¹, Anitha Patlolla², Zafar Iqbal² and Reginald C. Farrow¹; ¹Department of Physics, NJIT, Newark, New Jersey; ²Department of Chemistry and Environmental Science, NJIT, Newark, New Jersey.

2:45 PM L11.5
Anisotropic Etching and Crystallographic Nanoribbon Formation in Single-Layer Graphene by Channeling Nickel Nanoparticles. Javier D. Sanchez-Yamagishi¹, Leonardo C. Campos^1,3, Vitor R. Manfrinato^2,4, Pablo Jarillo-Herrero¹ and Jing Kong²; ¹Physics, MIT, Cambridge, Massachusetts; ²Department of Electrical Engineering and Computer Science, MIT, Cambridge, Massachusetts; ³Departamento de Fisica, UniVersidade Federal de Minas Gerais, Belo Horizonte, MG, Brazil; ⁴Departamento de Engenharia de Sistemas Eletronicos, Universidade de Sao Paulo, Sao Paulo, SP, Brazil.

3:00 PM BREAK

3:30 PM *L11.6
Synthesis, Properties and Assembly of Shape- and Composition-controlled Colloidal Nanocrystals. Liberato Manna, Fondazione Istituto Italiano di Tecnologia, Genova, Italy.

4:00 PM L11.7
Stable, High Current Density Field Emission from Zinc Oxide Nanowires Grown on a Carbon Nanotube Array. Mark Mann¹, Chi Li², Yan Zhang¹, Pritesh Hiralal¹, Husnu E. Unalan³, Wei Lei², Baoping Wang², William I. Milne¹ and Gehan Amaratunga¹; ¹Department of Engineering, University of Cambridge, Cambridge, Cambridgeshire, United Kingdom; ²Display R&D Center, School of Electronic Science and Engineering, Southeast University, Nanjing, China; ³Department of Metallurgical and Materials Engineering, Middle East Technical University, Ankara, Turkey.

4:15 PM L11.8
Large Yield Preparation of High Electronic Quality Graphene by a Langmuir-Schaefer Approach. Regis Y. Gengler¹, Alina Veligura¹, Dmitrios Gournis^2,1, Bart J. van Wees¹ and Petra Rudolf¹; ¹Zernike Institute for Advanced Materials, University of Groningen, Groningen, Netherlands; ²Departement of Materials Science and Engineering, University of Ioannina, Ioannina, Greece.

4:30 PM L11.9
Photochemical Metal to Semiconductor Conversion of Carbon Nanotubes. Lewis Gomez De Arco, Akshay Kumar, Yi Zhang, Koungmin Ryu, Alexander Badmaev and Chongwu Zhou; University of Southern California, Los Angeles, California.

4:45 PM L11.10
Role of Surfactant Molecular Structures on Nanotube Separation by Density Gradient Ultracentrifugation. Giulia Privitera¹, Francesco Bonaccorso¹, Tawfique Hasan¹, PingHeng Tan^1,3, Pietro G. Gucciardi² and Andrea C. Ferrari¹; ¹Department of Engineering, University of Cambridge, Cambridge, United Kingdom; ²CNR- Istituto per i Processi Chimico-Fisici (Messina), Messina, Italy; ³Institute of Semiconductors, Chinese Academy of Science, Beijing, China.