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A: High-k Dielectrics on Semiconductors with High Carrier Mobility

A: High-k Dielectrics on Semiconductors with High Carrier Mobility Image
November 30 - December 2, 2009
Chairs
Minghwei Hong     National Tsing Hua University
Wilman Tsai     Intel Corporation
Athanasios Dimoulas     National Center for Scientific Research "Demokritos"
Peide (Peter) D. Ye     Purdue University
 
Symposium Support
Riber, France


* Invited paper

SESSION A1: High-k Dielectrics
Chairs: Raj Jammy and Raynien Kwo
Monday Morning, November 30, 2009
Republic A (Sheraton)

8:30 AM *A1.1
Structural Characteristics of High-k Dielectrics / Semiconductors Heteroepitaxial Systems. Chia-Hung Hsu1,2 and J. Kwo3; 1Scientific Research Division, National Synchrotron Radiation Research Center, Hsinchu, Taiwan; 2Department of Photonics, National Chiao Tung University, Hsinchu, Taiwan; 3Department of Physics, National Tsing Hua University, Hsinchu, Taiwan.

9:00 AM A1.2
Tetragonal Phase in Ge Doped HfO2 Films on Si Investigated by X-ray Absorption Spectroscopy. Leonardo Miotti, Karen Paz Bastos and Gerald Lucovsky; Department of Physics, North Carolina State University, Raleigh, North Carolina.

9:15 AM A1.3
Effect of La and Al Doping on the Band Alignment at the SiO2 /HfO2 Interface. Xuhui Luo and Alex Demkov; Department of Physics, University of Texas at Austin, Austin, Texas.

9:30 AM A1.4
Rare-earth Oxide Thin Films for High-k Dielectric by Atomic Layer Deposition. Jun-Jieh Wang, Venkateswara Pallem and Christian Dussarrat; American Air Liquide, Inc., Newark, Delaware.

9:45 AM A1.5
Photoelectron Spectroscopy Study of Rare-Earth Oxide Films Deposited by Atomic Layer Deposition. Conan R. Weiland, Nicholas Lorenz and Robert Opila; Materials Science and Engineering, University of Delaware, Newark, Delaware.

10:00 AM BREAK

SESSION A2: Simulation
Chair: Tso-Ping Ma
Monday Morning, November 30, 2009
Republic A (Sheraton)

10:30 AM *A2.1
Performance Comparison of Si and III-V MOSFETs beyond the 15nm Node. Mark S. Lundstrom, Yang Liu, Himadri Pal and Mathieu Luisier; ECE, Purdue, West Lafayette, Indiana.

11:00 AM A2.2
Quantum Simulation of C-V and I-V Characteristics in Ge and III-V Materials/High-κ MOS Devices. Mathieu Moreau1, Daniela Munteanu1, Jean-Luc Autran1,2, Florence Bellenger3, Jerome Mitard3 and Michel Houssa4; 1IM2NP-CNRS, Marseille, France; 2IUF, Paris, France; 3IMEC, Leuven, Belgium; 4K. U. Leuven, Leuven, Belgium.

11:15 AM A2.3
Physics of Polymorphic Silicide Interfaces; First-principles Study of Stability, Doping, and Schottky Barrier. Takashi Nakayama and Shinichi Sotome; Physics Department, Chiba University, Chiba, Japan.

11:30 AM A2.4
Simulations of Short-channel Effects and Interface Traps in In0.75Ga0.25As MOSFET with ALD Al2O3 as Gate Dielectric. Ozhan Koybasi, Yanqing Wu, Min Xu and Peide D. Ye; Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana.

11:45 AM A2.5
Large-Scale Modeling of GeO2/Ge and SiO2/Si Interface Structures. Tomoya Onda, Hideaki Yamamoto, Ryo Tosaka and Takanobu Watanabe; Waseda university, Japan, Tokyo, Japan.

SESSION A3: GaN
Chairs: Jean Fompeyrine and Andrew Kummel
Monday Afternoon, November 30, 2009
Republic A (Sheraton)

1:30 PM *A3.1
Enhancement-mode Inversion-channel and Depletion-mode GaN MOSFETs using Atomic-layer-deposited Al2O3 and HfO2 as Gate Dielectrics. Yao-Chung Chang1, Wen-Hsin Chang1, Yu-Hsing Chang1, Raynien Kwo2, James M. Hong3, Jacky C. C. Tsai3 and Minghwei Hong1; 1Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan; 2Department of Physics, National Tsing Hua University, Hsinchu, Taiwan; 3HUGA Optotech Inc., Taichung, Taiwan.

2:00 PM A3.2
Electrical and Interfacial Studies of HfO2 Thin Films as high k Metal Gate Dielectric Layer on SiC Devices. Shiva Hullavarad and Nilima Hullavarad; Office of Electronic Miniaturization, University of Alaska Fairbanks, Fairbanks, Alaska.

2:15 PM A3.3
Physical and Electrical Interface Structure of Crystalline Oxides on GaN. Fred Walker, A. B. Posadas, C. A. F. Vaz, V. E. Henrich and C. H. Ahn; Center for Research on Interface Structure and Phenomena, Yale University, New Haven, Connecticut.

2:30 PM A3.4
The Importance of Chemical Bonding and Crystal Symmetry at the Heteroepitaxial Interface Between Oxides Epilayers and Gallium Nitride Surfaces. Mark D. Losego1, Lena Fitting Kourkoutis2, Ramon Collazo1, Seiji Mita1, David Muller2, Zlatko Sitar1 and Jon-Paul Maria1; 1Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina; 2Materials Science and Engineering, Cornell University, Ithaca, New York.

2:45 PM A3.5
Interface Structure of Epitaxially Deposited La2O3 and Sc2O3 Dielectrics on Gallium Nitride for MOS Applications. Mark Johnson, Virginia D. Wheeler, Dan Lichtenwalner, Matt Veety and Doug W. Barlage; North Carolina State University, Raleigh, North Carolina.

3:00 PM BREAK

SESSION A4: Substrates and Devices
Chairs: Alfredo Pasquarello and Wei-E Wang
Monday Afternoon, November 30, 2009
Republic A (Sheraton)

3:30 PM *A4.1
High Performance Scaled Alternative Channel MOSFETs with High Carrier Injection Velocities Raj Jammy, Jungwoo Oh, Niti Goel, Injo Ok, Jeff Huang, Prashant Majhi and Paul Kirsch; SEMATECH, Austin, Texas.

4:00 PM A4.2
Stress Liner Proximity Technique to Enhance Carrier Mobility in High-K Metal Gate MOSFETs. Dechao Guo1, Kathryn Schonenberg2, Jie Chen3, Daniel Jaeger2, Pranita Kulkarni1, Unoh Kwon2, Yue Liang2, Joyce Liu2, Liyang Song2, Franck Arnaud4, Huiming Bu1, Michael Chudzik2, William Henson2, Philip Oldiges2, Melanie Sherony2, An Steegan2, Voon-Yew Thean2 and Mukesh Khare1; 1IBM T.J. Watson Research Center, Yorktown Heights, New York; 2IBM Semiconductor Research and Develeopment Center, Hopewell Junction, New York; 3Chartered Semiconductor Manufacturing, Hopewell Junction, New York; 4STMicroelectronics, Hopewell Junction, New York.

4:15 PM A4.3
Channel Strain Analysis in Damascene-gate pMOSFETs on Si (100) and (110) Substrates by Plane and Cross-sectional Raman Measurements. Munehisa Takei1, Daisuke Kosemura1, Kohki Nagata1, Hiroaki Akamatsu1, Satoru Mayuzumi2,1, Shinya Yamakawa2, Hitoshi Wakabayashi2 and Atsushi Ogura1; 1School of Science and Technology, Meiji University, Kawasaki, Japan; 2Atsugi Tec, Sony Corporation, Atsugi, Japan.

4:30 PM A4.4
SiGe Channels for Higher Mobility CMOS Devices. Andreas Naumann1,2, Torben Kelwing1,2, Martin Trentzsch2, Thorsten Kammler2, Stephan Kronholz2, Peter Kuecher1 and Johann W. Bartha3; 1Fraunhofer-Center Nanoelectronische Technologien, Dresden, Germany; 2GLOBALFOUNDRIES Dresden Module One LLC & Co. KG, Dresden, Germany; 3Institut für Halbleiter- und Mikrosystemtechnik, Technische Universistät Dresden, Dresden, Germany.

4:45 PM A4.5
Formation of High Quality Colossal Ge-on-Insulator by Liquid-Phase Epitaxy from Si Substrate. Takanori Tanaka1, Yasuharu Ohta1, Kaoru Toko1, Masaru Itakura2, Taizoh Sadoh1 and Masanobu Miyao1; 1Dept. Electronics, Kyushu University, Fukuoka, Japan; 2Dept. ASEM, Kyushu University, Fukuoka, Japan.

SESSION A5: Poster Session
Chairs: Minghwei Hong, Wilman Tsai and Peide (Peter) Ye
Monday Evening, November 30, 2009
8:00 PM
Exhibit Hall D (Hynes)


A5.1
Fabrication of Single-Crystal Local Germanium-on-Insulator Structures by Lateral Liquid-Phase Epitaxy. Tatsuya Hashimoto, Chiaki Yoshimoto, Takuji Hosoi, Takayoshi Shimura and Heiji Watanabe; Material & Life Science, Graduate School of Engineering, Osaka University, Suita, Osaka, Japan.

A5.2
Structural and Dielectric Characterization of Interlanthanide LaGdO3 Ceramic and Thin Films for High-k Application. Shojan P. Pavunny1, R. Thomas1, N. K. Karan1, J. Schubert2 and R. S. Katiyar1; 1Department of Physics and Institute for Functional Nanomaterials, University of Puerto Rico, San Juan, Puerto Rico; 2Institute of Bio-and Nano-Systems (IBN1-IT) and JARA-Fundamentals of Future Information Technology, Research Centre, Jülich, Germany.

A5.3
Identification of Impurity Contained in LaAlO3 by Photoluminescence. Eiji Hirata and Yoshimichi Ohki; Electrical Engineering and Bioscience, Waseda University, Shinjuku, Tokyo, Japan.

A5.4
Abstract Withdrawn

A5.5
Electrostatic Passivation of Peripheral Interface Trap Charges and Electrostatic Doping in Accumulated Body Transistors. Mustafa B. Akbulut, Faruk Dirisaglik and Ali Gokirmak; Electrical Engineering, University of Connecticut, Storrs, Connecticut.

A5.6
Effective Work Functions of TiCxN1-x in Contact with HfO2 Through ab initio Simulations. Hong Zhu and Rampi Ramprasad; Department of Chemical, Materials & Biomolecular Engineering, Institute of Materials Science, University of Connecticut, Storrs, Connecticut.

A5.7
Interaction of an Oxygen Molecule with GaAs (001)-β2(2×4) Surface: First Principles Study. Dae-Hyun Kim1, Dae-Hee Kim1, Hwa-Il Seo2 and Yeong-Cheol Kim1; 1Department of Materials Engineering, Korea University of Technology & Education, Chonan, Korea, South; 2School of Information Technology, Korea University of Technology & Education, Chonan, Korea, South.

A5.8
Composition Dependence of the Dielectric Properties of Ta-Ge-O Thin Films. Taro A. Naoi, Sara Barron and R. Bruce van Dover; Materials Science and Engineering, Cornell University, Ithaca, New York.

A5.9
Atomic-layer-deposited Al2O3 and HfO2 on InGaAs - Electrical and Interfacial Micro-structural and Chemical Characteristics. Yi Jiun Lee1, Mao Lin Huang3, Yao Chung Chang1, Yu Hsing Chang1, Han Chin Chiu1, Pen Chang1, J. Raynien Kwo2 and Minghwei Hong1; 1Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan; 2Physics, National Tsing Hua University, Hsinchu, Taiwan; 3National Synchrotron Radiation Research Center, Hsinchu, Taiwan.

A5.10
Novel Zirconium Formamidinate Precursor for ZrO2 ALD Application. Huazhi Li and Deo V. Shenai; Dow Electronic Materials, The Dow Chemical Company, North Andover, Massachusetts.

A5.11
Improved Dielectric Phase and Interfacial Dipole Control of Gd2O3-doped HfO2 Gate Dielectrics by Co-sputtering Technique. Pai-Chi Chou1, Jer-Chyi Wang1, Woei-Cherng Wu2 and Chao-Sung Lai1; 1Chang Gung University, Tao-Yuan, Taiwan; 2department of electrophysics, National Chiao Tung University, Hsinchu, Taiwan.

A5.12
High Performance SnO2 Nanowire FETs with a high-k Al Doped TiO2 high-k Gate Insulator. Hyun Hee Park, Pil Soo Kang, Jeong Sook Ha and Gyu Tae Kim; Department of Chemical and Biological Engineering, Korea University, Seoul, South Korea.

SESSION A6: Ge and III-V: Device Structures
Chairs: Amy Liu and Tetsuji Yasuda
Tuesday Morning, December 1, 2009
Republic A (Sheraton)

8:30 AM *A6.1
Research Advances on III-V and Ge MOSFETs Beyond Si CMOS. J. Raynien Kwo1 and Minghwei Hong2; 1Physics, National Tsing Hua University, Hsinchu, Taiwan; 2Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan.

9:00 AM *A6.2
Scattering Mechanisms in Buried InGaAs/High-k Channels S. Oktyabrsky1, Padmaja Nagaiah1, Rama Kambhampati1, Vadim Tokranov1, Michael Yakimov1, Sergei Koveshnikov2, Niti Goel2 and Wilman Tsai2; 1University at Albany, Albany, New York; 2Intel Corporation, Santa Clara, California.

9:30 AM A6.3
Charge Pumping Characterization of Interface Traps in Atomic-layer Deposited Al2O3/In1-xGaxAs Metal-oxide-semiconductor Field-effect Transistors. Weike Wang1, James C. Hwang1, Yi Xuan2,3 and Peide D. Ye2,3; 1Electrical and Computer Engineering, Lehigh University, Bethlehem, Pennsylvania; 2Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana; 3Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana.

9:45 AM A6.4
Structural and Thermal Stability Study of Al2O3/GGO/In0.2Ga0.8As/GaAs Upon High Temperature Annealing. Yi Jiun Lee1, Pen Chang1, Tsung Hung Chiang1, Cho Ying Chuang2, Chih hsun Lee1, Shao Yun Wu1, Te Yang Lai1, J. Raynien Kwo2, Chia Hung Hsu3 and Minghwei Hong1; 1Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan; 2Physics, National Tsing Hua University, Hsinchu, Taiwan; 3National Synchrotron Radiation Research Center, Hsinchu, Taiwan.

10:00 AM BREAK

10:30 AM *A6.5
CMOS Technologies with High-electron Mobility III-V Channels and High-k Gate Stacks. Tso-Ping Ma and Abigail Lubow; Electrical Engineering, Yale University, New Haven, Connecticut.

11:00 AM *A6.6
III-V Metal-Oxide-Semiconductor Structures with Silicon Passivation Interlayer: Facts and Future. Chiara Marchiori, Christian Gerl, Mirja Richter, Daniele Caimi, Dave J. Webb, Christophe Rossel, Maryline Sousa, Heinz Siegwart, Caroline Andersson and Jean Fompeyrine; Zurich Research Laboratory, IBM Research GmbH, Rueschlikon, Switzerland.

11:30 AM A6.7
High-performance III-V MOSFETS with ALD High-κ LaLuO3. Yiqun Liu1, Yanqing Wu2, Min Xu2, Jun-Jieh Wang1, Peide D. Ye2 and Roy G. Gordon1; 1Department of Chemistry and Chemical Biology, Harvard, Cambridge, Massachusetts; 2School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana.

11:45 AM A6.8
ALD-Al2O3 as an Interlayer for Ge MOS Devices with Higher-k Dielectrics. Shankar Swaminathan1, Yasuhiro Oshima2,1, Michael Shandalov1 and Paul C. McIntyre1; 1Stanford University, CA, Stanford, California; 2Tokyo Electron U.S. Holdings, Incorporated, Santa Clara, California.

SESSION A7: Ge and III-V: Gate Dielectrics
Chairs: Athanasios Dimoulas and Chia-Hung Hsu
Tuesday Afternoon, December 1, 2009
Republic A (Sheraton)

1:30 PM *A7.1
High Mobility Channel Materials and Novel Devices for Scaling of Nanoelectronics beyond the Si Roadmap. Marc Heyns1,2, Florence Bellenger1, Guy Brammertz1, Matty Caymax1, Stefan De Gendt1, Brice De Jaeger1, Annelies Delabie1, Geert Eneman1, Guido Groeseneken1, Michel Houssa3, Daniele Leonelli1, Dennis Lin1, Koen Martens1, Clement Merckling1, Marc Meuris1, Jerome Mitard1, Julien Penaud4, Geoffrey Pourtois1, Marco Scarrozza1, Eddy Simoen1, Sven Van Elshocht1, William Vandenberghe1, Anne Vandooren1, Anne Verhulst1 and Wei-E Wang5; 1IMEC, Leuven, Belgium; 2Metallurgy and Materials Engineering, K.U.Leuven, Leuven, Belgium; 3Physics, K.U.Leuven, Leuven, Belgium; 4Riber assignee at IMEC, Leuven, Belgium; 5INTEL assignee at IMEC, Leuven, Belgium.

2:00 PM A7.2
Impact of Plasma Nitridation on Physical and Electrical Properties of Ultrathin Thermal Oxides on Ge(100). Katsuhiro Kutsuki, Gaku Okamoto, Takuji Hosoi, Takayoshi Shimura and Heiji Watanabe; Graduate School of Engineering, Osaka University, Suita, Osaka, Japan.

2:15 PM A7.3
Structural, Chemical and Electrical Characterisation of La-doped ZrO2 and Er-doped HfO2 Films Deposited on Ge Substrates. Simon D. Elliott1, Pierre-Eugene Coulon2, Sylvie Schamm2, Claudia Wiemer3, Luca Lamagna3, Silvia Baldovino3 and Marco Fanciulli3,4; 1Tyndall National Institute, Cork, Ireland; 2CEMES-CNRS, Toulouse, France; 3Laboratorio Nazionale MDM, CNR-INFM, Agrate Brianza (MB), Italy; 4Dipartimento di Scienza dei Materiali, Università di Milano Bicocca, Milano, Italy.

2:30 PM A7.4
Effects of Post-Deposition Annealing on the Characteristics of LaLuO3/Ge(100) Structures. Claudio Radtke1, Gabriel G. Marmitt1, Cristiano Krug2, Gabriel V. Soares3, Israel J. R. Baumvol2,3, Joao M. J. Lopes4,5, E. Durgun-Ozben4,5, J. Schubert4,5 and S. Mantl4,5; 1IQ-UFRGS, Porto Alegre, RS, Brazil; 2IF-UFRGS, Porto Alegre, RS, Brazil; 3CCET, UCS, Caxias do Sul, RS, Brazil; 4Institute for Bio- and Nanosystems (IBN1-IT), Research Center Juelich, Juelich, Germany; 5JARA-Fundamentls of Future Information Technologies, Juelich, Germany.

2:45 PM A7.5
In-situ X-ray Photoelectron Spectroscopy Study of As Decapping and Half Cycle Reactions During ALD of Al2O3 on In0.53Ga0.47As(001). Byungha Shin, Michael A. Kelly and Paul C. McIntyre; Materials Science and Engineering, Stanford University, Stanford, California.

3:00 PM BREAK

3:15 PM *A7.6
Catalytic Forming Gas Anneal on III-V/Ge MOS Systems. Wei-E Wang1, Han-Chung Lin2, Guy Brammertz2, Eddy Simoen2, Annelies Delabie2, Sonja Sioncke2, Matty Caymax2, Marc Meuris2 and Marc Heyns2; 1Intel c/o IMEC, Leuven, Belgium; 2IMEC, Leuven, Belgium.

3:45 PM A7.7
Study on Electronic and Crystal Structures in an Atomic-layer-deposited HfO2 Film on a GaAs (100) Substrate as a Function of Post-annealing Temperature. Chung Yi Kim1, Sun Young Lee1, Mann-Ho Cho1, Kwun-Bum Chung2, Dae Hong Ko3, Hyugsub Kim4 and Hoojung Lee4; 1Physics, Yonsei University, Seoul, Korea, South; 2Physics, North Carolina State University, Raleigh, North Carolina; 3Material Science and Engineering, Yonsei University, Seoul, Korea, South; 4School of Materials Science and Engineering, Sungkyunkwan University, Seoul, Korea, South.

4:00 PM A7.8
Energy-band Parameters of Atomic-layer-deposited Al2O3 and HfO2 on InGaAs. Mao-Lin Huang1,3, Yao-Chung Chang1, Yu-Hsing Chang1, Tsung-Da Lin1, Pen Chang1, Minghwei Hong1 and J. Raynien Kwo2; 1Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan; 2Physics, National Tsing Hua University, Hsinchu, Taiwan; 3Research Division, National Synchrotron Radiation Research Center, Hsinchu, Taiwan.

4:15 PM A7.9
Native Point Defects in Al2O3 and Their Impact on Devices. Justin R. Weber1 and Chris G. Van de Walle2; 1Department of Physics, University of California, Santa Barbara, Santa Barbara, California; 2Materials Department, University of California, Santa Barbara, Santa Barbara, California.

4:30 PM A7.10
The Role of La Surface Chemistry in the Passivation of Ge. Dimitra Tsoutsou, Georgia Mavrou, Yerasimos Panagiotatos, Sotiria F. Galata, Andreas Sotiropoulos and Athanasios Dimoulas; Institute of Materials Science, NCSR Demokritos, Aghia Paraskevi Attikis, Greece.

4:45 PM A7.11
Rare-earth Scandate High-k Films for Future Ge CMOS Technologies. Joao Marcelo Lopes1,2, Eylem Durgun Oezben1,2, Alexander Nichau1,2, Martin Roeckerath1,2, Gregor Mussler1,2, Uwe Breuer3, Astrid Besmehn3, Juergen Schubert1,2 and Siegfried Mantl1,2; 1Institute for Bio- and Nanosystems (IBN1), Research Center Juelich, Juelich, Germany; 2JARA-Fundamentals of Future Information Technologies, JARA-FIT, Juelich, Germany; 3Central Division of Analytical Chemistry, Research Center Juelich, Juelich, Germany.

SESSION A8: Ge and III-V: Interfaces
Chair: Minghwei Hong
Wednesday Morning, December 2, 2009
Republic A (Sheraton)

8:00 AM *A8.1
Substrate Atoms Rearrangement during Gate Oxide Deposition on Compound Semiconductors. Andrew C. Kummel, Jonathan B. Clemens, Jian Shen, Wilhelm Wilhelm Melitz, Darby L. Feldwinn, Evgueni Chagarov and Sarah Bishop; Dept. Chemistry and Biochemistry, University of California-San Diego, San Diego, California.

8:30 AM *A8.2
A First Principles Investigation of Electronic and Structural Properties at Ge/GeO2 Interfaces. Alfredo Pasquarello, Ecole Polytechnique Federale de Lausanne (EPFL), Lausanne, Switzerland.

9:00 AM A8.3
Observation by Ultraviolet Photoelectron Spectroscopy of Defect-induced Strong Inversion of the Ge Surface. Athanasios Dimoulas, Yerasimos Panagiotatos, Dimitra Tsoutsou and Georgia Mavrou; Institute of Materials Science, NCSR Demokritos, Aghia Paraskevi Attikis, Greece.

9:15 AM A8.4
Influence of the Oxidizing Agent on the Ge Dangling Bonds at the Ge/GeO2 Interface. Marco Fanciulli1,2, Silvia Baldovino1,2 and Alessandro Molle2; 1Dipartimento di Scienza dei Materiali, Università di Milano Bicocca, Milano, Italy; 2MDM National Laboratory, CNR-INFM, Agrate Brianza, Italy.

9:30 AM A8.5
Formation and Stability of Defects at Ge-GeO2 Interfaces. Leonidas Tsetseris1,2 and Sokrates T. Pantelides2,3; 1Physics, Aristotle University of Thessaloniki, Thessaloniki, Greece; 2Physics and Astronomy, Vanderbilt University, Nashville, Tennessee; 3Oak Ridge National Laboratory, Oak Ridge, Tennessee.

9:45 AM A8.6
Self-terminating Oxidation at Interface between Ge Substrate and high-k Films. Simon D. Elliott and James C. Greer; Tyndall National Institute, Cork, Ireland.

10:00 AM BREAK

10:30 AM *A8.7
Relationship between Interface Structures and Electrical Properties in the High-k/III-V System. Tetsuji Yasuda1, Noriyuki Miyata1, Yuji Urabe1, Hiroyuki Ishii1, Taro Itatani1, Hisashi Yamada2, Noboru Fukuhara2, Masahiko Hata2, Akihiro Ohtake3, Masafumi Yokoyama4, Takuya Hoshii4, Mitsuru Takenaka4 and Shinichi Takagi4; 1AIST, Tsukuba, Ibaraki, Japan; 2Sumitomo Chemical, Tsukuba, Japan; 3National Institute for Materials Science (NIMS), Tsukuba, Japan; 4The University of Tokyo, Tokyo, Japan.

11:00 AM *A8.8
Atomic Scale Control of High-k/InGaAs Interfaces and Correlation with Interface Trap Densities. Susanne Stemmer1, Yoontae Hwang1, Roman Engel-Herbert1, Joel Cagnon1 and Niti Goel2,3; 1Materials Department, University of California, Santa Barbara, Santa Barbara, California; 2Sematech, Austin, Texas; 3Intel Corporation, Santa Clara, California.

11:30 AM A8.9
Reduction of Native Oxides on GaAs During Atomic Layer Growth of Al2O3. Tian Feng1,2, Hang Dong Lee1,2, Lei Yu1,2, Daniel Mastrogiovanni1,2, Alan Wan1,2, Torgny Gustafsson1,2 and Eric Garfunkel1,2; 1Physics and Chemistry, Rutgers University, Piscataway, New Jersey; 2Laboratory for Surface Modification, Rutgers University, Piscataway, New Jersey.

11:45 AM A8.10
Ge-based Interface Passivation for Atomic Layer Deposited La-doped ZrO2 on III-V Compound (GaAs, In0.15Ga0.85As) Substrates. Alessandro Molle1, Luca Lamagna1, Sabina Spiga1, Marco Fanciulli1,2, Guy Brammertz3 and Marc Meuris3; 1Laboratorio Nazionale MDM, CNR-INFM, Agrate Brianza (MB), Italy; 2Dipartimento di Scienza dei Materiali, Università degli Studi di Milano Bicocca, Milano, Italy; 3IMEC vzw, Leuven, Belgium.

SESSION A9: High Mobility Substrates
Chairs: Yao-Chung Chang and S. Oktyabrsky
Wednesday Afternoon, December 2, 2009
Republic A (Sheraton)

1:30 PM *A9.1
Molecular Beam Epitaxy Growth of High Mobility Compound Semiconductor Devices for Integration with Si CMOS. Amy W. Liu1, D. Lubyshev1, J. M. Fastenau1, Y. Wu1, M. T. Bulsara2, E. A. Fitzgerald2, M. Urteaga3, W. Ha3, J. Bergman3, M. J. Choe3, B. Brar3, W. E. Hoke4, J. R. LaRoche4, T. E. Kazior4, D. Smith5, D. Clark5, R. F. Thompson5, C. Drazek6, N. Daval6, L. Benaissa7 and E. Augendre7; 1IQE Inc., Bethlehem, Pennsylvania; 2Massachusetts Institute of Technology, Cambridge, Massachusetts; 3Teledyne Scientific Company, Thousand Oaks, California; 4Raytheon RF Components, Andover, Massachusetts; 5Raytheon Systems Ltd., Glenrothes, Fife, Scotland, United Kingdom; 6SOITEC Parc Technologique des Fontaines, Bernin, France; 7CEA-LETI MINATEC, Grenoble, France.

2:00 PM A9.2
Epitaxial Growth of Highly Crystallized InSb films on Si Substrate by MBE and Their Devices Properties. Yoshihisa Kunimi, Ayano Sakurai, Shinichiro Akiyama, Hiromi Fujita, Masatoshi Miyahara and Yoshihiko Shibata; Magnetic Sensors Process Technology & Development Dept., Asahi Kasei Microdevices Corporation, Fuji, Shizuoka, Japan.

2:15 PM A9.3
Electrical Characteristics and Thermal Stability Study of TaN/Al2O3/GeO2/Ge (111) MOS Capacitors. Mustafa Jamil, Domingo Ferrer, Shagandeep Kaur, Emanuel Tutuc and Sanjay Banerjee; Microelectronic Research Center, The University of Texas at Austin, Austin, Texas.

2:30 PM A9.4
High Mobility of Single-Crystalline Ge Stripes on Insulator by SiGe Mixing Triggered Liquid-Phase Epitaxy. Kaoru Toko, Takashi Sakane, Takanori Tanaka, Taizoh Sadoh and Masanobu Miyao; Dept. Electronics, Kyushu University, Fukuoka, Japan.

2:45 PM A9.5
Fast I-V Characterization of Inversion-mode In0.75Ga0.25MOSFETs with ALD Al2O3 as Gate Dielectric. Chen Wang1,2, Liangchun Yu1, Kin P. Cheung1, Yi Xuan2 and Peide D. Ye2; 1NIST, Gaithersburg, Maryland; 2Purdue University, West Lafayette, Indiana.



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