Resource Center
Send Us Your FeedbackSymposium FF: GaN, AlN, InN, and Related Materials
SYMPOSIUM FF
November 28 - December 2, 2005
Chairs
| Martin Kuball | University of Bristol | |
| Thomas H. Myers | West Virginia University | |
| Joan M. Redwing | The Pennsylvania State University | |
| Takashi Mukai | Nichia Corporation |
Symposium Support
AIXTRON, Inc.
Cree, Inc.
Nichia Semiconductor Research Laboratory
Renishaw plc
Sony Corporation
SVT Associates, Inc.
Toshiba Corporation
Veeco Compound Semiconductor Inc.
(see ONLINE PUBLICATIONS at www.mrs.org)
as volume 892
of the Materials Research Society
Symposium Proceedings Series.
* Invited paper
Chair: Russ Dupuis
Monday Morning, November 28, 2005
Grand Ballroom (Sheraton)
8:00 AM *FF1.1
Deep Ultraviolet Light Emitting Diodes with Emission below 300 nm. M. Asif Khan, Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina.
8:30 AM FF1.2
AlGaN Deep Ultraviolet Light-Emitting Diodes with Vertical Structure Koji Kawasaki1, Choshiro Koike1, Misaichi Takeuchi2,1, Yoshinobu Aoyagi1,2; 1Tokyo Institute of Technology, Yokohama, Japan. 2RIKEN, Wako, Japan.
8:45 AM FF1.3
AlGaN Based Sub-250 nm Light-Emitting Diodes Jianping Zhang1, Xuhong Hu1, Jianyu Deng1, Y. Belinko1, A. Lunev1, T M Katona1, Remis Gaska1 and Asif M Khan2; 1Sensor Electronic Technology, Columbia, South Carolina; 2University of South Carolina, Columbia, South Carolina.
9:00 AM FF1.4
270 nm Deep UV LEDs with a Micro-Pixel Design Shuai Wu, Ajay Sattu, Li Yan, Yadav Praveen, Hasan Faruq, Wenhong Sun, Maxim Shatlov, Vinod Adivarahan and Asif Khan; Electrical Engineering, University of South Carolina, Columbia, South Carolina.
9:15 AM FF1.5
Low frequency noise of GaN¨Cbased UV LEDs Shayla Sawyer1, S. L. Rumyantsev1,3, N. Pala1,2, M. S. Shur1, Y. U. Bilenko2, J. P. Zhang2, X. Hu2, A. Lunev2, J. Deng2 and R. Gaska2; 1Electrical Computer and Systems Engineering, Rensselaer Polytechnic Institute Center for Broadband Data Transport Science and Technology, Troy, New York; 2Sensor Electronic Technology, Inc., Columbia, South Carolina; 3On leave from the Ioffe Institute of Russian Academy of Sciences, St-Petersburg, Russia, Russian Federation.
9:30 AM BREAK
9:45 AM FF1.6
Deep UV AlGaN based light emitting diodes grown by gas source molecular beam epitaxy Sergey Nikishin, Boris Borisov, Vladimir Kuryatkov, Mark Holtz and Henryk Temkin; Texas Tech University, Lubbock, Texas.
10:00 AM FF1.7
A Growth Method to Reduce Dislocation Density and Control Stress in AlN Films Grown on Sapphire. Andrew A. Allerman, Mary H. Crawford, Stephen R. Lee, David M. Follstaedt, Paula P. Provencio and Arthur J. Fischer; Sandia National Laboratories, Albuquerque, New Mexico.
10:15 AM FF1.8
A Novel Solid State General Illumination Source David Nicol1, Ian Ferguson1,2 and Ali Asghar1; 1Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia; 2Materials Science Engineering, Georgia Institute of Technology, Atlanta, Georgia.
10:30 AM FF1.9
Improved Efficiency of Polychromatic Generation with CdSe Nano-Crystals Coated on an InGaN/GaN Quantum-Well Light-Emitting Diode. Dong-Ming Yeh1, Chih-Feng Lu1, Chi-Feng Huang1, Tsung-Yi Tang1, Horng-Shyang Chen1, Jian-Jang Huang1, Chih-Chung Yang1, Chih-Min Chuang2 and Wei-Fang Su2; 1Institute of Electro-Optical Eng., National Taiwan University, Taipei, Taiwan; 2Dept. Material Science and Eng., National Taiwan University, Taipei, Taiwan.
Chair: Jung Han
Monday Morning, November 28, 2005
Grand Ballroom (Sheraton)
10:45 AM FF2.1
Compressive Strain Relaxation in AlGaN on AlN by Inclined Threading Dislocations David M. Follstaedt, Stephen R. Lee, Jerrold A. Floro, Paula P. Provencio, Andrew A. Allerman and Mary H. Crawford; Physical, Chemical and Nano Sciences Center, Sandia National Laboratories, Albuquerque, New Mexico.
11:00 AM FF2.2
Correlation Between Stress Evolution and Threading Dislocation Density Evolution during MOCVD Growth of GaN on (111) Si. Srinivasan Raghavan1, Xiaojun Weng1,2, Elizabeth Dickey1 and Joan M. Redwing1; 1Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania; 2The Electro-optics Centre, The Pennsylvania State University, University Park, Pennsylvania.
11:15 AM FF2.3
Strain Relaxation Mechanisms in thin AlN Heterostructures on GaN. S. R. Lee, D. D. Koleske, J. A. Floro and K. C. Cross; Sandia National Laboratories, Albuquerque, New Mexico.
11:30 AM FF2.4
Reduction of Dislocation Density in GaN Layers Grown By Multi Step Technique Maxim Odnoblyudov1, Teemu Lang2 and Vladislav Bougrov1; 1A.F.Ioffe Physico-Technical Institute, St.Petersburg, Russian Federation; 2Optoelectronics Laboratory, Helsinki University of Technology, Espoo, Finland.
Chair: Takao Miyajima
Monday Afternoon, November 28, 2005
Grand Ballroom (Sheraton)
1:30 PM FF3.1
H Enhancement of N Vacancy Migration in GaN. Ryan R. Wixom and Alan F. Wright; Sandia National Laboratories, Albuquerque, New Mexico.
1:45 PM FF3.2
Remarkable Increase of Deep UV Emission from Quaternary InAlGaN by Reducing Oxygen and Carbon Impurities Tomoaki Ohashi1,2, Hideki Hirayama1, Koji Ishibashi1 and Norihiko Kamata2; 1Advanced Devices Laboratory, RIKEN, Saitama, Japan; 2Saitama Univ., Saitama, Shimo-Okubo, Sakura-ku, Japan.
2:00 PM FF3.3
Spatially Resolved Synchrotron Radiation Investigations of Dopants in GaN Michael Siebert1, Thomas Schmidt1, Jan-Ingo Flege1, Stefan Figge1, Sven Einfeldt1, Angelika Pretorius1, Subhashis Gangopadhyay1, Joerg Zegenhagen2, Tien-Lin Lee2, Lucca Gregoratti3, Alexei Barinov3, Detlev Hommel1 and Jens Falta1; 1Institute of Solid State Physics, University of Bremen, Bremen, Germany; 2European Synchrotron Radiation Facility, Grenoble, France; 3ELETTRA Synchrotron Light Source, Basovizza, Italy.
2:15 PM FF3.4
Growth and p-type Doping in Al-rich AlGaN Alloys. Mim Lal Nakarmi, Neeraj Nepal, Cristofer Ugolini, Jingyu Lin and Hongxing Jiang; Kansas State University, Manhattan, Kansas.
2:30 PM BREAK
Chair: Steve Durbin
Monday Afternoon, November 28, 2005
Grand Ballroom (Sheraton)
3:30 PM FF4.1
The Use of Cathodoluminescence in Gallium Nitride During Growth to Determine Substrate Temperature. Kyoungnae Lee, Eric Schires and Thomas H. Myers; Physics, West Virginia University, Morgantown, West Virginia.
3:45 PM FF4.2
Reduction of Tilt and Twist in AlGaN Films Grown on (0001) Sapphire. Hock M. Ng and Theo Siegrist; Bell Labs, Lucent Technologies, Murray Hill, New Jersey.
4:00 PM FF4.3
Structural, Magnetic and STM Studies of CrGaN Grown by rf N-Plasma Molecular Beam Epitaxy. Muhammad B. Haider1, Rong Yang1, Hamad Al-Brithen3, Costel Constantin1, David C. Ingram1, Arthur R. Smith1, Gabriel Caruntu2 and Charles J. O'Connor2; 1Physics and Astronomy, Ohio University, Athens, Ohio; 2Advanced Materials Research Institute, University of New Orleans, New Orleans, Louisiana; 3Department of Physics, King Saud University, Riyadh, Saudi Arabia.
4:15 PM FF4.4
Development of UV-LEDS Based on III-Nitride MQWS Grown Along Non-Polar [11-20] Direction. Ramya Chandrasekaran1, Anirban Battacharyya1, Adrian Williams1, Jasper Cabalu1, Christos Thomidis1, Theodore D. Moustakas1, Lin Zhou2 and David J. Smith2; 1Electrical Engineering, Boston University, Boston, Massachusetts; 2Department of Physics and Astronomy and Center for Solid State Science, Arizona State University, Tempe, Arizona.
4:30 PM FF4.5
In Situ Control of Ga-Adsorbate Mediated GaN Growth Mode. Jay Steven Brown1, Gregor Koblmueller1,3, Feng Wu1,2, Robert Averbeck3, Henning Riechert3, Pierre Petroff1 and James Speck1,2; 1Materials, University of California, Santa Barbara, California; 2JST/ERATO, UCSB Group, University of California, Santa Barbara, California; 3Corporate Research Photonics, Infineon Technologies AG, Munich, Bavaria, Germany.
4:45 PM FF4.6
In-Situ Investigation of Surface Stoichiometry During InGaN and GaN Growth by Plasma-assisted Molecular Beam Epitaxy using RHEED-TRAXS. Randy Preston Tompkins, Brenda L. VanMil, Kyoungnae Lee, David Lederman and Thomas H. Myers; Physics, West Virginia University, Morgantown, West Virginia.
Chair: Asif Khan
Tuesday Morning, November 29, 2005
Grand Ballroom (Sheraton)
8:00 AM *FF5.1
GaN HEMTs: An Enabling Technology for Next Generation Solid State Phased Array Applications. Thomas Kazior, Raytheon RF Components, Andover, Massachusetts.
8:30 AM FF5.2
High Power AlGaN/GaN Schottky Barrier Diode with 1000 V Operation. Seikoh Yoshida, Nariaki Ikeda, Jiang Li, Hiroshi Kambayasi, Takahiro Wada and Hironari Takehara; Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd., Yokohama, Kanagawa, Japan.
8:45 AM FF5.3
Effects of the high-refraction index SiNx passivation on AlGaN/GaN HFETs with a very low gate-leakage current Hiroshi Kambayashi, Takahiro Wada, Nariaki Ikeda and Seikoh Yoshida; Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd., Yokohama, Kanagawa, Japan.
9:00 AM FF5.4
Piezo-electric stress and self-heating effects in the AlGaN/GaN HFET probed by micro-Raman spectroscopy. Andrei Sarua1, Hangfeng Ji1, Martin Kuball1, Michael J. Uren2, Trevor Martin2, K. P. Hilton2 and R. S. Balmer2; 1Physics, University of Bristol, Bristol, United Kingdom; 2QinetiQ Ltd., Malvern, Worcs, United Kingdom.
Chair: Joan Redwing
Tuesday Morning, November 29, 2005
Grand Ballroom (Sheraton)
9:15 AM *FF6.1
Growth Studies and Nanoscale Strain Profiles of InN Quantum Dots. Olivier Briot, Sandra Ruffenach and Bernard Gil; GES, CNRS, Montpellier, France.
9:45 AM FF6.2
Properties of InN grown by High-Pressure CVD Vincent Woods1, Mustafa Alevli1, Ute Haboeck3, Hun Kang2, Jayantha Senawiratne1, Martin Strassburg1,2, Ian T. Ferguson2, Axel Hoffmann3 and Nikolaus Dietz1; 1Physics & Astronomy, Georgia State University, Atlanta, Georgia; 2Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia; 3Institut fuer Festkoerperphysik, Technische Universitaet Berlin, Berlin, Germany.
10:00 AM BREAK
10:15 AM FF6.3
Comparison Between N- and In- Polarity InN/InGaN MQWs Structures Grown by RF-MBE. Songbek Che1,2,3, Tomoyasu Mizuno1, Takurou Shinada1, Yoshihiro Ishitani1,2,3 and Akihiko Yoshikawa1,2,3; 1Department of E&M Engineering, Chiba University, Chiba, Japan; 2Center for Frontier Electronics and Photonics, Chiba University, Chiba, Japan; 3InN-Project as a CREST-program of JST, Chiba University, Chiba, Japan.
10:30 AM FF6.4
Influence of Nitrogen Species on InN Grown by PAMBE. P. A. Anderson1,3, D. Carder2,3, R. J. Reeves2,3 and S. M. Durbin1,3; 1Electrical & Computer Engineering, University of Canterbury, Christchurch, New Zealand; 2Physics, University of Canterbury, Christchurch, New Zealand; 3MacDiarmid Institute for Advanced Materials and Nanotechnology, Christchurch, New Zealand.
10:45 AM *FF6.5
Carrier Recombination, Relaxation, and Transport Dynamics in InN. Fei Chen1, Alexander N Cartwright1, Hai Lu2 and William J Schaff2; 1Department of Electrical Engineering, University at Buffalo, State University of New York, Amherst, New York; 2Department of Electrical and Computer Engineering, Cornell University, Ithaca, New York.
11:15 AM FF6.6
Electron Transport Properties of InN. Rebecca E. Jones1,2, Sonny X. Li1,2, Leon Hsu3, Kin Man Yu2, Wladek Walukiewicz2, Joel W. Ager2, Eugene E. Haller1,2, Hai Lu4 and William Schaff4; 1Materials Science and Engineering, University of California, Berkeley, Berkeley, California; 2Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California; 3General College, University of Minnesota, Minneapolis, Minnesota; 4Electrical and Computer Engineering, Cornell University, Ithaca, New York.
11:30 AM FF6.7
Evidence of p-Type Conductivity in Mg-Doped InN. Kin Man Yu1, Rebecca E. Jones1,2, Sonny X. Li1,2, Wladek Walukiewicz1, Joel W. Ager1, Eugene E. Haller1,2, Hai Lu3 and William J. Schaff3; 1Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California; 2Materials Science and Engineering, University of California, Berkeley, Berkeley, California; 3Electrical and Computer Engineering, Cornell University, Ithaca, New York.
Chair: Christian Wetzel
Tuesday Afternoon, November 29, 2005
Grand Ballroom (Sheraton)
1:30 PM *FF7.1/EE5.1
III-N Epitaxial Growth for Nitride Devices. Russell Dupuis, Theodore Chung, Wonseok Lee, Peng Li, Jae Limb, Jae-Hyun Ryou and Dongwon Yoo; Center for Compound Semiconductors, School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia.
2:00 PM FF7.2/EE5.2
MOVPE growth of AlInN based devices Armin Dadgar1, Juergen Blaesing1, Christoph Hums1, Martin Neuburger2, Ingo Daumiller3, Mike Kunze3, Hartmut Witte1, Andre Krtschil1, Annette Diez1, Erhard Kohn2 and Alois Krost1; 1Fakultaet fuer Naturwissenschaften, Institut fuer Experimentelle Physik, Otto-von-Guericke-Universitaet Magdeburg, Magdeburg, Germany; 2Department of Electron Devices and Circuits, University of Ulm, Ulm, Germany; 3MicroGaN GmbH, Ulm, Germany.
2:15 PM FF7.3/EE5.3
Spontaneous Compositional Superlattice and Band Gap Reduction in Si-doped AlxGa1-xN Epilayers Min Gao1, Yong Lin1, Shawn Bradley1, Jeonghyun Hwang2, William Schaff2, Steven Ringel1 and Leonard Brillson1; 1the Ohio State University, Columbus, Ohio; 2Cornell University, Ithaca, New York.
2:30 PM BREAK
3:30 PM FF7.4/EE5.4
Structural, Optical, and Magnetic Behavior of in-situ Doped, MOCVD-Grown Ga(1-x)Mn(x)N Epilayers and Heterostructures. Martin Strassburg1,2, William E. Fenwick1, Matthew Kane1,3, Ali Asghar1, Shalini Gupta1, Hun Kang1, Christopher Summers3, Nikolaus Dietz2, Wolfgang Gehlhoff4, Axel Hoffmann4 and Ian T. Ferguson1; 1Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia; 2Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia; 3School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia; 4Institute of Solid State Physics, Technical University of Berlin, Berlin, Germany.
3:45 PM FF7.5/EE5.5
Fe-Centers in GaN as Candidates for Spintronics Applications. Enno Malguth1, Axel Hoffmann2, Matthew Phillips1 and Wolfgang Gehlhoff2; 1Microstructural Analysis Unit, University of Technology, Sydney, New South Wales, Australia; 2Institute of Solid-State-Physics, Univerity of Technology, Berlin, Germany.
4:00 PM FF7.6/EE5.6
Highly Insulating Non-polar a-GaN/AlGaN Films and Heterojunctions over r-Sapphire. Z. Chen, Jinwei X. Yang and M. Asif Khan; Electrical Engineering, University of South Carolina, Columbia, South Carolina.
4:15 PM FF7.7/EE5.7
Realization of high-crystallinity a-plane GaN grown on r-plane sapphire substrate for high-performance light-emitting device Yoshizane Okadome, Youshuke Tsuchiya, Hiroko Furukawa, Kentarou Nagamatsu, Akira Honshio, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano and Isamu Akasaki; Meijo University, Nagoya, Aichi-prefecture, Japan.
4:30 PM FF7.8/EE5.8
Characterization of a-plane AlGaN/GaN heterostructure grown on r-plane sapphire substrate Motoaki Iwaya, Yoshizane Okadome, Yousuke Tsuchiya, Hiroko Furukawa, Akira Honshio, Yasuto Miyake, Satoshi Kamiyama, Hiroshi Amano and Isamu Akasaki; Faculty of Science and Technology, 21st Century COE Program "Nano-Factory", Meijo University, Nagoya, Japan.
4:45 PM FF7.9/EE5.9
Optimization of (10-1-1) Semipolar InGaN/GaN Multiple Quantum Wells for the Growth of Semipolar Light Emitting Diodes. Arpan Chakraborty, Troy Baker, Feng Wu, Jason Winders, Stacia Keller, Steven P. DenBaars, James S. Speck, Shuji Nakamura and Umesh K. Mishra; UCSB, Santa Barbara, California.
Chairs: Juergen Christen and Tsvetanka Jeleva
Tuesday Evening, November 29, 2005
8:00 PM
Exhibition Hall D (Hynes)
FF8.1
Growth of InGaN Alloys with High Indium Concentration by Plasma-assisted MBE Josh Abell1, Papo Chen1, Theodore Moustakas1, Lin Zhou2 and David Smith2; 1Boston University, Boston, Massachusetts; 2Arizona State University, Tempe, Arizona.
FF8.2
InN Nano Rodes and Epitaxial Layers Grown by HVPE Alexander Syrkin1, Alexander Usikov1, Oleg Kovalenkov1, Vladimir Ivantsov1, Vitali Soukhoveev1, Vladimir Dmitriev1, Charles Collins2 and Eric Readinger3; 1Technologies and Devices International, Inc., Silver Spring, Maryland; 2U.S. Army Research Laboratory, Adelphi, Maryland; 3Electrical And Computer Engineering, University of Maryland, College Park, Maryland.
FF8.3
The Relationship between InN Properties and Hydrogen and Nitrogen Maria Losurdo1,2, Giovanni Bruno1, Tong-Ho Kim2, Pae Wu2, Soojeong Choi2, Mike Morse2, April Brown2, Francesco Masia3, Antonio Polimeni3 and Maria M Giangregorio1; 1Chemistry, IMIP-CNR, Bari, Italy; 2electrical and Computer Engineering, Duke University, Durham, North Carolina; 3Physics, Universita La Sapienza, Rome, Italy.
FF8.4
Epitaxial growth of InN on nearly lattice matched (Mn,Zn)Fe2O4 by pulsed laser deposition Kazuya Mitamura1, Jitsuo Ohta2,3, Hiroshi Fujioka2,3 and Masaharu Oshima1; 1Department of Applied Chemistry, The University of Tokyo, Tokyo, Japan; 2Institute of Industrial Science, The University of Tokyo, Tokyo, Japan; 3Kanagawa Academy of Science and Technology, Kanagawa, Japan.
FF8.5
Structure of InN films grown on single crystalline ZnO substrates prepared by molecular beam epitaxy Takeshi Ohgaki1, Tsuyoshi Ohnishi2, Naoki Ohashi3, Isao Sakaguchi3, Mikk Lippmaa2, Hajime Haneda3 and Atsuo Yasumori1; 1Department of Materials Science and Technology, Tokyo University of Science, Chiba, Japan; 2Institute for Solid State Physics, The University of Tokyo, Chiba, Japan; 3Advanced Materials Laboratory, National Institute for Materials Science, Ibaraki, Japan.
FF8.6
Temperature Dependence of Mobility and Carrier Density in InN Films. J. Thakur1, Vaman M. Naik2, R. Naik3, D. Haddad3, G. Auner1, H. Lu4 and W. Schaff4; 1Department of Electrical and Computer Engineering, Wayne State University, Detroit, Michigan; 2Department of Natural Sciences, U Michigan-Dearborn, Dearborn, Michigan; 3Department of Physics and Astronomy, Wayne State University, Detroit, Michigan; 4Department of Electrical and Computer Engineering, Cornell University, Ithaca, New York.
FF8.7
Abstract Withdrawn
FF8.8
Abstract Withdrawn
FF8.9
Abstract Withdrawn
FF8.10
InN Growth by MOVPE at Low V-III Ratio in Chlorinating Environment Sang Won Kang1, Hwasoup Oh1, Kyu Han Lee1, Keunman Song1, Dong-Yul Lee1, Sunwoon Kim1, Sangsu Hong1, Jae Won Kim1, Hyun Jong Park2, Olga Kryliouk2 and Tim Anderson2; 1Samsung Electro-Mechanics Co., LTD., Suwon, South Korea; 2Chemical Engineering, University of Florida, Gainesville, Florida.
Chairs: Juergen Christen and Tsvetanka Jeleva
Tuesday Evening, November 29, 2005
8:00 PM
Exhibition Hall D (Hynes)
FF9.1
Reliability and degradation modes of 280 nm deep UV LEDs on sapphire Zheng Gong, Sameer Chhajed, Mikhail Erikovich Gaevski, Wenhong Sun, Vinod Advivarahan, Maxim Shatalov and Asif Khan; Electrical Engineering, University of South Carolina, Columbia, South Carolina.
FF9.2
Effect of Carrier-blocking Layers on the Emission Characteristics of AlGaN-based Ultraviolet Light Emitting Diodes and the Origins of their Parasitic Emissions Ji-Soo Park1, Daryl W Fothergill2, Xiyao Zhang2, Seann M Bishop1, John F Muth2 and Robert F Davis1; 1Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina; 2Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina.
FF9.3
Efficient 350 nm-Band Quaternary InAlGaN UV-LEDs Fabricated on High-Quality AlN Buffer Layers. Hideki Hirayama1, Takayoshi Takano2 and Yukihiro Kondo1,2; 1Advanced Devices Laboratory, Riken, Saitama, Japan; 2Matsushita Electric Works, Osaka, Japan.
FF9.4
Abstract Withdrawn
FF9.5
Optical Degradation of AlGaN and InGaN Light-emitting Diodes at Elevated Temperatures. Xian-An Cao, S. F. LeBoeuf and T. E. Stecher; GE Global Research, Niskayuna, New York.
FF9.6
Growth and Process of Two-color Blue/Green Light-emitting Diodes with an n-i-p-i-n Configuration of Two Different Quantum-well Structures Chi-Feng Huang, Tsung-Yi Tang, Dong-Ming Yeh, Chih-Feng Lu, Jian-Jang Huang and Chih-Chung Yang; Institute of Electro-Optical Eng., National Taiwan University, Taipei, Taiwan.
FF9.7
Analysis of high-power packages for white-light-emitting diode lamps with remote phosphor Hong Luo1, Jong Kyu Kim2, Yangang Xi1, E. Fred Schubert1,2, Jaehee Cho3, Cheolsoo Sone3 and Yongjo Park3; 1Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Troy, New York; 2Electrical, Computer, and Systems Engineering Department, Rensselaer Polytechnic Institute, Troy, New York; 3Photonics Program Team, Samsung Advanced Institute of Technology, Suwon, South Korea.
Chairs: Juergen Christen and Tsvetanka Jeleva
Tuesday Evening, November 29, 2005
8:00 PM
Exhibition Hall D (Hynes)
FF10.1
Al mole fraction dependence of deep levels in AlGaN/GaN-HEMT structures estimated by CV profiling. Junjiroh Kikawa1, Katsuhiro Imada1, Tomoyuki Yamada1, Tadayoshi Tsuchiya1, Yuichi Hiroyama1, Masayuki Iwami1, Tsutomu Araki2, Akira Suzuki3,1 and Yasushi Nanishi2; 1Advanced HF Devices R&D Center, R&A Association for Future Electron Devices, Kusatsu, Shiga, Japan; 2Department of Photonics, Ritsumeikan Univercity, Kusatsu, Shiga, Japan; 3Research Organization of Science and Engineering, Ritsumeikan Univercity, Kusatsu, Shiga, Japan.
FF10.2
Trapping behavior of deep defects in GaN layers and GaN based heterostructures investigated by Photo-Conductivity and Photo-Hall effect measurements Hartmut Witte, Andre Krtschil, Armin Dadgar, Alois Krost and Juergen Christen; Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg, Magdeburg, Germany.
FF10.3
Withdrawn
FF10.4
Deep level transient spectroscopy of InGaN/GaN multiple quantum well light emitting diodes Jae Wook Kim1, G. Hugh Song1 and Jhang W. Lee2; 1Dept. Info. & Comm., Gwangju Institiute of Science and Technology, Gwangju, South Korea; 2Kowon Technology, Yongin, South Korea.
Chairs: Juergen Christen and Tsvetanka Jeleva
Tuesday Evening, November 29, 2005
8:00 PM
Exhibition Hall D (Hynes)
FF11.1
Epitaxal growth of InGaN quantum dots grown by MOVPE and RF-MBE and the structural and optical properties Tomohiro Yamaguchi, Stephan Figge, Kathrin Sebald, Angelika Pretorius, Andreas Rosenauer, Juergen Gutowski and Detlef Hommel; Institute of Solid State Physics, University of Bremen, Bremen, Bremen, Germany.
FF11.2
Determination of mean inner potential of gallium nitride nanowires using off-axis electron holography Andrew See Weng Wong1, Ghim Wei Ho2, Rafal B Dunin-Borkowski1, Rachel A Oliver1 and Colin J Humphreys1; 1Materials Science and Metallurgy, University of Cambridge, Cambridge, Cambridge, United Kingdom; 2Department of Electrical Engineering, Nanoscience Centre, University of Cambridge, Cambridge, Cambridge, United Kingdom.
FF11.3
Raman scattering of self-assembled gallium nitride nanorods synthesized by plasma-assisted molecular beam epitaxy Dake Wang1, Chin-Che Tin1, John Williams1, Minseo Park1, Y. S. Park2, C. M. Park2, T. W. Kang2 and W.-C. Yang2; 1Department of Physics, Auburn University, Auburn, Alabama; 2Quantum Functional Semiconductor Research Center and Department of Physics, Dongguk University, Seoul, South Korea.
FF11.4
Seeded Catalytic Growth of GaN Nanowires on Platinum Nanoparticles Obtained by Annealing Thin Pt Films. Jinyong Kim, Douglas Tham and John E. Fischer; Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania.
FF11.5
Fast High-Density Low-Pressure Plasma Synthesis of GaN Nanocrystals. Uwe R. Kortshagen1, Elijah Thimsen1, Feng Liao1, Joe Johnson2 and Stephen A. Campbell2; 1Mechanical Engineering, University of Minnesota, Minneapolis, Minnesota; 2Electrical and Computer Engineering, University of Minnesota, Minneapolis, Minnesota.
FF11.6
Synthesis, Structure and Properties of Novel III-V Semiconductor Single-Crystalline Nanotubes Longwei Yin and Yoshio Bando; Advanced Materials Laboratory, National Institute for Mateials Science, Tsukuba, Ibaraki, Japan.
FF11.7
InAlN Nanostructures: Strain Morphology, and Optical Properties. Yuriy Volodymyr Danylyuk1, Daniel G. Georgiev1, Gregory W. Auner1, Ratna Naik2 and Vaman M. Naik3; 1ECE SSIM, Wayne State University, Detroit, Michigan; 2Physics, Wayne State University, Detroit, Michigan; 3Department of Natural Sciences, University of Michigan-Dearborn, Dearborn, Michigan.
FF11.8
Opto-electronic Simulation of GaN Nanowire Lasers. Liang Chen and Elias Towe; Department of Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania.
FF11.9
Morphological Study of InN Nanorods Grown by H-MOVPE Hyun Jong Park1, Olga Kryliouk1, YongSun Won1, Dmitry Khokhlov2, Timur Burbaev3 and Tim Anderson1; 1Chemical Engineering, University of Florida, Gainesville, Florida; 2Physics Department, Moscow State University, Moscow, Russian Federation; 3Lebedev Physical Institute, Moscow, Russian Federation.
Chairs: Juergen Christen and Tsvetanka Jeleva
Tuesday Evening, November 29, 2005
8:00 PM
Exhibition Hall D (Hynes)
FF12.1
Polarization-enhanced ohmic contacts to GaInN-based blue light-emitting diodes Thomas Gessmann1,3, Yangang Xi2,3, Hong Luo2,3, Jong-Kyu Kim1,3, Jinqun Xi2,3, Kaixuan Chen2,3 and E. Fred Schubert1,2,3; 1Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, New York; 2Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York; 3Future Chips Constellation, Rensselaer Polytechnic Institute, Troy, New York.
FF12.2
Analysis of Quantum Efficiency of GaInN/GaN Light Emitting Diodes in the Range of 420 - 540 nm. Wei Zhao1,2, Yufeng Li1,2, Yong Xia1,2, Ya Ou1,2, Mingwei Zhu1,2, Ibrahim Yilmaz1,2, Theeradetch Detchprohm1,2, E. Fred Schubert1,3 and Christian Wetzel1,2; 1Future Chips Constellation, Rensselaer Polytechnic Institute, Troy, New York; 2Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York; 3Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, New York.
FF12.3
Blue-Green InGaN/GaN LEDs with Quantum Dot and Quantum Well Structures Grown by Plasma-assisted Molecular Beam Epitaxy Tao Xu1, Jasper S Cabulu1, Adrian Williams1, Ryan France1, Alvin G Stern1, Theodore D Moustakas1, Lin Zhou2 and David J Smith2; 1Department of Electrical and Computer Engineering, Boston University, Boston, Massachusetts; 2Center for Solid State Science and Department of Physics and Astronomy, Arizona State University, Tempe, Arizona.
FF12.4
Light Emitting Diodes Based on InGaN/GaN Quantum Wells Produced by Combining Hydride Vapor Phase Epitaxy and Plasma Assisted Molecular Beam Epitaxy Jasper Cabalu, Tao Xu, Adrian Williams, Alvin Stern, Ryan France and Theodore Moustakas; Electrical and Computer Engineering, Boston University, Boston, Massachusetts.
FF12.5
Characterization of Photonic Bandgap Crystals using Angular Scatterometry Tom Ryan, Christopher Raymond and Steve Hummel; Accent Optical Technologies, Bend, Oregon.
FF12.6
Abstract Withdrawn
FF12.7
The Optical Power of GaN-based Diodes Enhanced by Bias-Assisted Photoelectrochemical Etching Process. Kwang-Woo Kwon1,4, Young-Ho Kim1, Sun-Hong Park2, Soo-young Seo2, Seon-Hyo Kim2, Kyoung-Bo Kim4 and Sang-Wook Han3; 1Material Sci. & Eng., Hanyang University, Seoul, South Korea; 2Material Sci. & Eng, Postech, Pohang, South Korea; 3Education of Science, Chonbuk National University, Jeon-ju, South Korea; 4Ninex, Pyoung-taek, South Korea.
FF12.8
Electrical Characterization of Blue Light Emitting Diodes as a Function of Temperature Madhu Murthy1, Michael A. Awaah1, Kumar K Das1, Derek Wang2, M Park2 and F. J. Walker3; 1Electrical Engineering, Tuskegee University, Tuskegee, Alabama; 2Department of Physics, Auburn University, Auburn, Alabama; 3ORNL/University of Tennessee, ORNL/University of Tennessee, Oak Ridge, Tennessee.
FF12.9
Study of GaN Light-Emitting Diodes Obtained by Laser-Assisted Debonding. C. P. Chan1, T. M. Yue2, C. Surya1, A. B. Djurisic3, C. K. Liu4 and M. Li4; 1Department of Electronic and Information Engineering and Photonics Research Centre, The Hong Kong Polytechnic University, Hong Kong, Hong Kong; 2Department of Industrial and Systems Engineering and Advanced Manufacturing Technology Research Center, The Hong Kong Polytechnic University, Hong Kong, Hong Kong; 3Department of Physics, The University of Hong Kong, Hong Kong, Hong Kong; 4ASM Pacific Technology Limited, Hong Kong, Hong Kong.
FF12.10
Optimization of Ridge Wave Guide GaN-based Homo-Epitaxial Laser Diodes Jens Dennemarck, Stephan Figge and Detlef Hommel; Institute of Solid State Physics, Bremen, Germany.
FF12.11
Role of deep levels in DC current aging of GaN/InGaN Light-Emitting Diodes studied by Capacitance and Photocurrent Spectroscopy. Anna Cavallini1, Antonio Castaldini1, Lorenzo Rigutti1, Gaudenzio Meneghesso2, Matteo Meneghini2, Simone Levada2, Enrico Zanoni2, Ulrich Zehnder3, Thomas Zahner3 and Volker Haerle3; 1Physics, University of Bologna, Bologna, Italy; 2Information Engineering, University of Padova, Padova, Italy; 3OSRAM Opto Semiconductors, Regensburg, Germany.
FF12.12
3D Simulations on Realistic GaN-Based Light-Emitting Diodes. Z. Q. Leo Li, Oleksiy Shmatov and Simon Li; Crosslight Software Inc., Burnaby, British Columbia, Canada.
Chairs: Juergen Christen and Tsvetanka Jeleva
Tuesday Evening, November 29, 2005
8:00 PM
Exhibition Hall D (Hynes)
FF13.1
Application of Aluminum Nitride Thin Film for Micromachined Ultrasonic Transducers Qianghua Wang, Jianzeng Xu, Changhe Huang and Gregory Auner; Department of Electrical and Comouter engineering, Wayne State University, Detroit, Michigan.
FF13.2
Fabrication of Schottky-Type UV Photodetectors based on Bulk GaN. Yi Zhou1, Dake Wang1, Chin-Che Tin1, John Williams1, Minseo Park1, N. Mark Williams2 and Andrew Hanser2; 1Department of Physics, Auburn University, Auburn, Alabama; 2Kyma Technologies, Inc., Raleigh, North Carolina.
FF13.3
Schottky Diodes for Hydrogen Sensing on Free-standing GaN. Lars Voss1, Hung-ta Wang2, S. J. Pearton1, F. Ren2 and B. P. Gila1; 1Materials Science and Engineering, University of Florida, Gainesville, Florida; 2Chemical Engineering, University of Florida, Gainesville, Florida.
FF13.4
Mechanism of Current Leakage in Ni Schottky Diodes on Cubic GaN and AlxGa1-xN Epilayers. Donat J. As1, Stefan Potthast1, Jara Fernandez1, Klaus Lischka1, Hiroyuki Nagasawa2 and Masayuki Abe2; 1Department of Physics, University of Paderborn, Paderborn, Germany; 2HOYA Advanced Semiconductor Technologies Co., Ltd., Kanagawa, Japan.
FF13.5
Simulation of Self-Heating and Ambient Temperature Effects in GaN-based Field-Effect Transistors. Valentin O. Turin and Alexander A. Balandin; Nano Device Laboratory, Department of Electrical Engineering, University of California Riverside, Riverside, California.
FF13.6
Double-Ion-Implanted GaN MESFETs with Extremely Low Source/Drain Resistance Kazuki Nomoto1, Nobuyuki Ito1, Taku Tajima1, Takeshi Kasai2, Tomoyoshi Mishima3, Taroh Inada1, Masataka Satoh1 and Tohru Nakamura1; 1Department of EECE and Research Center of Ion Beam Technology, HOSEI University, Koganei, Tokyo, Japan; 2Chemitronics, Musashimurayama, Tokyo, Japan; 3Hitachi Cable, Tuchiura, Ibaraki, Japan.
FF13.7
Electrical domains and sub-millimeter signal generation in AlGaN/GaN superlattices. Irina Gordion1, Alexander Manasson2 and Vladimir Litvinov1; 1WaveBand Corporation, Irvine, California; 2Physics Department, University of Michigan, Ann Arbor, Michigan.
FF13.8
Growth, processing and characterization of GaN/AlGaN/SiC vertical n-p diodes. Steven Boeykens1,2, Maarten Leys1, Marianne Germain1, Jef Poortmans1, Ronnie Belmans2 and Gustaaf Borghs1; 1IMEC, Leuven, Belgium; 2Dept. of Electrical Engineering, Katholieke Universiteit Leuven, Leuven, Belgium.
FF13.9
Fabrication and device characteristics of bulk GaN-based Schottky diodes Yi Zhou1, Mingyu Li1, Dake Wang1, Claude Ahyi1, Chin-Che Tin1, John Williams1, Minseo Park1, N. Mark Williams2 and Andrew Hanser2; 1Department of Physics, Auburn University, Auburn, Alabama; 2Kyma Technologies, Inc., Raleigh, North Carolina.
FF13.10
Reduction of Base Access Resistance in AlGaN/GaN Heterojunction Bipolar Transistors using GaInN Base Cap Layer and Selective Epitaxial Growth. Jay M. Shah1, J. K. Kim1, Y. Xi2, Th. Gessmann1 and E. F. Schubert1,2; 1Department of Electrical, Computer, & Systems Engineering, Rensselaer Polytechnic Institute, Troy, New York; 2Department of Physics, Applied Physics, & Astronomy, Rensselaer Polytechnic Institute, Troy, New York.
FF13.11
Quaternary Thermodynamic Stability of Oxide Dielectrics to III-N Semiconductors. Mark Johnson and Yoga N. Saripalli; Materials Science and Engineering, NC State University, Raleigh, North Carolina.
FF13.12
Design and Development of MBE Grown AlGaN/ GaN HEMT Devices on SiC Substrates for RF Applications. Ashok K. Sood1, Rajwinder Singh1, Yash R. Puri1, Frederick W. Clarke2, Amir Dabiran3, Peter Chow3, Jie Deng4 and James C. M. Hwang4; 1Magnolia Optical Technologies, Inc., Woburn, Massachusetts; 2U. S. Army Space and Missile Defense Command, Huntsville, Alabama; 3SVT Associates, Inc., Eden Prairie, Minnesota; 4Electrical Engineering, Lehigh University, Bethlehem, Pennsylvania.
FF13.13
Relations between passivation layer deposition conditions and AlGaN/GaN HFET performance Pankaj B. Shah, Benjamin Huebschman, Ali Darwish, Nelson Y. Mark, Mike Derenge and Ken A. Jones; Sensors and Electron Devices Directorate, US Army Research Laboratory, Adelphi, Maryland.
Chairs: Juergen Christen and Tsvetanka Jeleva
Tuesday Evening, November 29, 2005
8:00 PM
Exhibition Hall D (Hynes)
FF14.1
Forming device quality oxide interfaces on GaN using remote plasma techniques J. P. Long1, Cristiano Krug1, Marc Ulrich2,1 and Gerald Lucovsky1; 1Physics, North Carolina State University, Raleigh, North Carolina; 2Physics, Army Research Office, Research Triangle Park, North Carolina.
FF14.2
Comparative Study of the Interfacial Reaction of Thin Ti/Al/Mo/Au Ohmic Contacts to AlGaN/GaN Heterostructure and to n-GaN. Liang Wang1,3, Fitih M. Mohammed1,3 and Ilesanmi Adesida2,3; 1Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois; 2Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois; 3Micro and Nanotechnology Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois.
FF14.3
Fabrication and electrical characteristics of Ti/Al ohmic contact to Si+ implanted GaN Nobuyuki Ito1, Akira Suzuki1, Mitsunori Kawamura1, Kazuki Nomoto1, Takeshi Kasai2, Tomoyoshi Mishima3, Taroh Inada1, Tohru Nakamura1 and Masataka Satoh1; 1Department of EECE and Research Center of Ion Beam Technology, Hosei University, Koganei, Tokyo, Japan; 2Chemitronics, Musashimurayama, Tokyo, Japan; 3Hitachi Cable, Tsuchiura, Ibaraki, Japan.
FF14.4
TiB2, CrB2 and W2B based High Thermal Stability Ohmic Contacts to n-GaN Rohit Khanna1, S. J. Pearton1, C. J. Kao2, I. Kravchenko3, F. Ren3, G. C. Chi2, A. Dabiran4 and A. Osinsky4; 1Department of Materials Science and Engineering, University of Florida, Gainesville, 32611, Florida; 2Department of Electrical Engineering, National Central University, Chung-Li, 32054, Taiwan; 3Department of Chemical Engineering, University of Florida, Gainesville, 32611, Florida; 4SVT Associates, Eden Prairie, 55344, Minnesota.
FF14.5
Anti-diffusion barriers for gold-based metallization to GaN Anna Piotrowska1, Eliana Kaminska1, Pawel Jagodzinski1, Marek Guziewicz1, Artur Szczesny1,2, Adam Barcz1,3, Rafal Jakiela1,5, Elzbieta Dynowska3, Anna Stonert4, Andrzej Turos4,5, Stephan Figge6, Roland Kroeger6 and Detlef Hommel6; 1Institute of Electron Technology, Warsaw, Poland; 2Warsaw University of Technology, Warsaw, Poland; 3Institute of Physics PAS, Warsaw, Poland; 4Institute of Nuclear Problems, Warsaw, Poland; 5Institute of Electronic Materials Technology, Warsaw, Poland; 6University of Bremen, Bremen, Germany.
FF14.6
Damage Recovery of Mg+-implanted GaN During Rapid Thermal Annealing. Igor O Usov, Terry G Holesinger and Paul N Arendt; MST-STC, Los Alamos National Laboratory, Los Alamos, New Mexico.
FF14.7
Investigation of Plasma Etching Damage Effect on p-GaN with a New Ridge Type Test Structure Taehoon Jang, Y.J. Sung, O.H. Nam and Y. Park; Photonics Program Team, Samsung Advanced Institute of Technology, Gyeonggi-Do, South Korea.
FF14.8
Abstract Withdrawn
FF14.9
Substrate influence on the high-temperature annealing behavior of GaN: Si vs. sapphire David Pastor1, Ramon Cusco1, Luis Artus1, Enrique Iborra2, Juan Jimenez3, Francisca Peiro4, German Gonzalez5 and Enrique Calleja6; 1Inst. Jaume Almera, C.S.I.C., Barcelona, Spain; 2Tecnologia Electronica, ETSIT, Univ.Politecnica Madrid, Madrid, Spain; 3Fisica Materia Condensada, Univ. Valladolid, Valladolid, Spain; 4Electronica, Univ. Barcelona, Barcelona, Spain; 5Fisica Aplicada III, Univ. Complutense, Madrid, Spain; 6ISOM and Ingenieria Electronica, ETSIT,Univ.Politecnica Madrid, Madrid, Spain.
FF14.10
Maskless Surface-Charge Lithography for GaN Micro- and Nanostructuring. Ion Tiginyanu1,2, Veaceslav Popa2 and Olesea Volciuc2; 1Institute of Applied Physics, Academy of Sciences of Moldova, Chisinau, Moldova; 2National Center for Materials Study and Testing, Technical University of Moldova, Chisinau, Moldova.
FF14.11
Etch-back technique for the planarization of the various crystal orientations of GaN. Adrian Williams and Theodore Moustakas; Electrical and Computer Engineering, Boston University, Boston, Massachusetts.
FF14.12
3-Nitride Light Emitting Diodes with Transparent Nanoparticle-Embedded p-Ohmic Electrodes. June-O Song1, Hun Kang2, David Nicol3, Ian T. Ferguson4, Hyun-Gi Hong5 and Tae-Yeon Seong6; 1Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia; 2Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia; 3Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia; 4Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia; 5Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju, South Korea; 6Materials Science and Engineering, Korea University, Seoul, South Korea.
Chair: Thomas E. Kazior
Wednesday Morning, November 30, 2005
Grand Ballroom (Sheraton)
8:00 AM FF15.1
III-Nitride Epitaxial Material on Large-Diameter Semi-Insulating SiC Substrates for High Power RF Transistors. Adam W. Saxler1, Ed Hutchins1, Austin Blew2, Yifeng Wu3, R. Peter Smith1, Scott Sheppard1, Sten Heikman3, Primit Parikh3 and Scott Allen1; 1Cree, Inc., Durham, North Carolina; 2Lehighton Electronics, Inc., Lehighton, Pennsylvania; 3Cree Santa Barbara Technology Center, Goleta, California.
8:15 AM FF15.2
Digital Dielectric Deposition for Metal-Oxide-Semiconductor AlGaN/GaN HFETs. Shiva Rai, Naveen Tipirneni, Rongming Chu, Alexei Nickolaevich Koudymov, Vinod Adivarahan, Grigory Simin, Yang Jinwei and Asif Khan; Electrial Engineering, University of South Carolina, Columbia, South Carolina.
8:30 AM FF15.3
Normally Off-Mode AlGaN/GaN HFET with p-Type Gate Contact. Norio Tsuyukuchi, K. Nagamatsu, Y. Hirose, M. Iwaya, S. Kamiyama, H. Amano and I. Akasaki; Materials Science and Engineering, Faculty of Science and Technology, 21st COE Program Nano-factory, Meijo University, Nagoya, Japan.
8:45 AM FF15.4
Flip Chip Mounting for Improved Thermal Management of AlGaN/GaN HFETs Hangfeng Ji1, Andrei Sarua1, Martin Kuball1, Jo Das2, Wouter Ruythooren2, Marianne Germain2 and Gustaaf Borghs2; 1Physics Department, University of Bristol, Bristol, United Kingdom; 2IMEC, Leuven, Belgium.
9:00 AM FF15.5
III-Nitride Metal-Oxide-Semiconductor-Heterostructure Voltage Controlled Capacitor Zijiang Yang, Alexei Koudymov, Vinod Adivarahan, Grigory Simin, Jinwei Yang and M. Asif Khan; Electrical Engineering, University of South Carolina, Columbia, South Carolina.
9:15 AM FF15.6
Effect of Fe Doping in i-Layer and Passivation Scheme on Performance Characteristics of GaN p-i-n Rectifiers. Jae Limb, Dongwon Yoo, Jae-Hyun Ryou and Russell Dupuis; School of Electrical and Computer Engineering, Geogia Institute of Technology, Atlanta, Georgia.
Chair: Thomas E. Kazior
Wednesday Morning, November 30, 2005
Grand Ballroom (Sheraton)
9:30 AM FF16.1
Low Temperature Selected Area Re-Growth of Ohmic Contacts for III-N FETs. Yoganand Nrusimha Saripalli1, Chang Zeng2, Joseph P. Long3, Judith Grenko1, Mark Johnson1 and Doug Barlage2; 1Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina; 2Dept of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina; 3Dept of Physics, North Carolina State University, Raleigh, North Carolina.
9:45 AM FF16.2
Evidence for Non-Interfacial-Nitride Formation Ohmic Contact Mechanism in Silicon Containing Ti/Al/Mo/Au Metallization for AlGaN/GaN HEMTs. Fitih M. Mohammed1,2, Liang Wang1,2 and Ilesanmi Adesida1,3; 1Micro and Nanotechnology Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois; 2Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois; 3Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois.
10:00 AM BREAK
Chair: Tom Myers
Wednesday Morning, November 30, 2005
Grand Ballroom (Sheraton)
10:15 AM FF17.1
Nanoscale capacitance-voltage measurements on AlGaN/GaN heterostructures Goutam Koley1, L. Lakshmanan1, N. Tipirneni1, M. Gaevski1, A. Khan1, Ho-Young Cha2 and M. G. Spencer2; 1Electrical Engineering, University of South Carolina, Columbia, South Carolina; 2Electrical Engineering, Cornell University, Ithaca, New York.
10:30 AM FF17.2
Weak Antilocalization in Polarization-Doped AlGaN/GaN Heterostructures. N. Thillosen, V. A. Guzenko, Th. Schaepers, N. Kaluza and H. Hardtdegen; Institute of Thin Films and Interfaces ISG1, Research Center Juelich, Juelich, NRW, Germany.
10:45 AM FF17.3
Improvement in p-type AlGaN activation process with a Ni catalytic layer. Takayuki Naono1, Hiroshi Fujioka2,3, Jun Okabayashi1, Masaharu Oshima1 and Hisayuki Miki4; 1Department of Applied Chemistry, The University of Tokyo, Tokyo, Japan; 2Institute of Industrial Science, The University of Tokyo, Tokyo, Japan; 3Kanagawa Academy of Science and Technology, Kanagawa, Japan; 4Showa Denko K.K., Chiba, Japan.
11:00 AM FF17.4
Polarization Induced 3-Dimensional Electron Slabs in Graded AlGaN Layers John Simon1, Siddharth Rajan2, Kejia Wang1, Huili Xing1 and Debdeep Jena1; 1Electrical Engineering, University of Notre Dame, Notre Dame, Indiana; 2ECE, University of California, Santa Barbara, California.
11:15 AM FF17.5
Electron scattering due to VGa-ON threading edge dislocations in n-type epitaxial wurtzite GaN. Jeong Ho You, Jun-Qiang Lu and H. T. Johnson; Department of Mechanical & Industrial Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois.
11:30 AM FF17.6
Highly p-Type a-GaN Grown on r-Plane Sapphire Substrate. Yosuke Tsuchiya, Y. Okadome, H. Furukawa, A. Honshio, M. Iwaya, S. Kamiyama, H. Amano and I. Akasaki; Materials Science and Engineering, Faculty of Science and Technology, 21st-Century COE Program "Nano-Factory", Meijo University, Nagoya, Japan.
Wednesday Afternoon, November 30, 2005
Grand Ballroom (Sheraton)
1:30 PM *FF18.1/EE9.1
ZnCdO/ZnMgO and ZnO/AlGaN Heterostructures for UV and Visible Light Emitters. Andrei V Osinsky1, J. W. Dong1, J. Q. Xie1, B. Hertog1, A. M. Dabiran1, P. P. Chow1, S. J. Pearton2, D. C. Look4, W. Schoenfeld3, O. Lopatiuk3, L. Chernyak3 and M. Gerhold5; 1SVT Associates, Eden Prairie, Minnesota; 2University of Florida, Gainesville, Florida; 3University of Central Florida, Orlando, Florida; 4Wright State University, Dayton, Ohio; 5U.S. Army Research Office, Durham, North Carolina.
2:00 PM FF18.2/EE9.2
New Wide Band Gap Alloy BeZnO Growth Yungryel Ryu1, Jorge A. Lubguban2, A. B. Corman2, Henry W. White2, J. H. Leem3, M. S. Han3, Y. J. Youn4 and W. J. Kim5; 1MOXtronics, Inc, Columbia, Missouri; 2Physics Department, University of Missouri, Columbia, Missouri; 3Moxtronix, Gwangju, South Korea; 4Semiconductor Physics Research Center, Jeonbuk National University, Jeonju, South Korea; 5Department of Physics, Changwon National University, Changwon, South Korea.
2:15 PM FF18.3/EE9.3
Optically Tunable MgZnO Nanocrystallites and their Structural Properties. John L. Morrison1, Xiang-Bai Chen1, Jesse Huso1, Heather Hoeck1, James Mitchell1, Dario A. Machleidt1, Leah Bergman1 and Tsvetanka Zheleva2; 1Physics Department, University of Idaho, Moscow, Idaho; 2Army Research Lab, Adelphi, Maryland.
2:30 PM BREAK
3:30 PM FF18.4/EE9.4
Piezoelectric characterization and stimulated emissions of ZnO pillars within hexagonal arrays Robert Hauschild1, Hongjin Fan2, Woo Lee2, Marin Alexe2, Armin Dadgar3, Alois Krost3, Kornelius Nielsch2, Margit Zacharias2 and Heinz Kalt1; 1Institut of Applied Physics, University of Karlsruhe, Karlsruhe, Germany; 2Max Planck Institute of Microstructure Physics, Halle, Germany; 3Institute of Experimental Physics, Otto-von-Guericke University, Magdeburg, Germany.
3:45 PM FF18.5/EE9.5
UV Lasing in Three-Dimensional, Optically Active ZnO Photonic Crystals Fabricated by Atomic Layer Deposition. Michael Georg Scharrer1, Alexey Yamilov2, Xiaohua Wu2, Larry Aagesen1, Hui Cao2 and Robert P. H. Chang1; 1Materials Science & Engineering, Northwestern University, Evanston, Illinois; 2Physics and Astronomy, Northwestern University, Evanston, Illinois.
4:00 PM FF18.6/EE9.6
Low-Temperature Plasma-Assisted MOCVD Growth of ZnO Maria Losurdo1, Pio Capezzuto2, Giovanni Bruno1, Graziella Malandrino3, Manuela Blandino3 and Ignazio Fragala3; 1Chemistry, IMIP-CNR, Bari, Italy; 2Chemistry, University of Bari, Bari, Italy; 3Chemistry, University of Catania, Catania, Italy.
4:15 PM FF18.7/EE9.7
Metal Organic Chemical Vapor Deposition of Zinc Oxide. William E. Fenwick1, Ming Pan2,1, June-O Song1, Nola Li1, Shalini Gupta1, Hun Kang1, Ali Asghar1, Martin Strassburg1,3, Nikolaus Dietz3 and Ian T. Ferguson1,4; 1Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia; 2Cermet Inc., Atlanta, Georgia; 3Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia; 4School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia.
4:30 PM FF18.8/EE9.8
Abstract Withdrawn
4:45 PM FF18.9/EE9.9
High-quality p-type ZnO films with solid-source phosphorus-doping by molecular beam epitaxy. Faxian Xiu1, Zheng Yang1, Leelaprasanna J. Mandalapu1, Dengtao Zhao1, Jianlin Liu1 and Ward P. Beyermann2; 1Department of Electrical Engineering, University of California, Riverside, Riverside, California; 2Department of Physics, University of California, Riverside, Riverside, California.
Chair: Martin Kuball
Thursday Morning, December 1, 2005
Grand Ballroom (Sheraton)
8:00 AM *FF19.1
Advances in epitaxial growth and packaging for high-power InGaN-based light-emitting diodes. Andrew Y Kim, Farid Ahmed, Jerome Bhat, Eugene Chen, Lou Cook, Wendy Fan, Werner Goetz, Sebnem Karakoc, Reena Khare, Steve Maranowski, Tal Margalith, Paul Martin, Mira Misra, Yu-Chen Shen, Dan Steigerwald, Frank Steranka, Steve Stockman, Sudhir Subramanya and John Uebbing; Lumileds Lighting, US, LLC, San Jose, California.
8:30 AM FF19.2
A semipolar (10-1-3) InGaN/GaN green light emitting diode. Rajat Sharma1, P. Morgan Pattison1, Troy J. Baker1,3, Benjamin A. Haskell1,3, Robert M. Farrell2, Hisashi Masui1, Feng Wu1,3, Steven P. DenBaars1,2,3, James S. Speck1,3 and Shuji Nakamura1,2,3; 1Materials, University of California, Santa Barbara, Santa Barbara, California; 2Electrical and Computer Engineering, University of California, Santa Barbara, Santa Barbara, California; 3NICP/ERATO JST, UCSB Group, University of California, Santa Barbara, Santa Barbara, California.
8:45 AM FF19.3
Charge Profiling of near-UV, Blue, Green GaInN/GaN Light Emitting Diode Structures. Yong Xia1,2, Ya Ou1,2, Ibrahim Yilmaz1,2, Mingwei Zhu1,2, Yufeng Li1,2, Wei Zhao1,2, Theeradetch Detchprohm1,2, E. Fred Shubert1,3 and Christian Wetzel1,2; 1Future Chips Constellation, Rensselaer Polytechnic Institute, Troy, New York; 2Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Troy, New York; 3Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, New York.
9:00 AM FF19.4
Direct Wafer Bonding of GaN and ZnO for Optoelectronic Application Akihiko Murai, Daniel B. Thompson, Christina Ye Chen, Steven P. DenBaars, Shuji Nakamura and Umesh K. Mishra; UCSB, Santa Barbara, California.
9:15 AM FF19.5
Enhancement of Light Extraction in Gainn Light-Emitting Diodes by Omni-Directional Reflectors with ITO Nanorod Low-Index Layer. Jong Kyu Kim1, J. -Q. Xi2, Hong Luo2, Jay M. Shah1, Yangang Xi2, Thomas Gessmann1, Jaehee Cho3, Cheolsoo Sone3, Yongjo Park3 and E. Fred Schubert1,2; 1ECSE, Rensselaer Polytechnic Institute, Troy, New York; 2Physics, Rensselaer Polytechnic Institute, Troy, New York; 3Photonics Program Team, Samsung Advanced Institute of Technology, Suwon, South Korea.
9:30 AM FF19.6
High Efficiency Nitride Light Emitting Diodes using Patterned Structures Cheolsoo Sone1, Jaehee Cho1, Jin Seo Im1, Sukho Yoon1, Jeong Wook Lee1, Hyunsoo Kim1, Joosung Kim1, Kwang Hyeon Baik1, Hyung Kun Kim1, Yusik Kim1, Yongjo Park1 and Heonsu Jeon2; 1Photonics Program Team, Samsung Advanced Institute of Technology, Suwon, Kyungki-do, South Korea; 2School of Physics and Inter-university Semiconductor Research Center, Seoul National University, Seoul, Seoul, South Korea.
9:45 AM FF19.7
Homoepitaxial GaN based laser diodes at 390 nm emission wave length. Stephan Figge, Jens Dennemarck and Detlef Hommel; Institute of Solid State Physics, University of Bremen, Bremen, Bremen, Germany.
10:00 AM BREAK
Chair: Alex Cartwright
Thursday Morning, December 1, 2005
Grand Ballroom (Sheraton)
10:15 AM FF20.1
Time-resolved Spectroscopy of Excitons Bound at Shallow Neutral Donors in HVPE GaN. Bo Monemar1, Plamen P. Paskov1, Peder Bergman1, Tadas Malinauskas2, Kestutis Jarasiunas2, Alexey A. Toropov3, Pierre Gibart4, Bernard Beaumont4 and Akira Usui5; 1IFM, Linkoping University, Linkoping, Sweden; 2Institute of Materials Science and Applied Research, Vilnius University, LT-2040 Vilnius, Lithuania; 3RAN, A F Ioffe Physico-Technical Institute, St Petersburg, Russian Federation; 4Lumilog SA, F-06220 Vallauris, France; 5R&D Division, Furukawa Co, Ltd, Tsukuba, Japan.
10:30 AM FF20.2
Extremely High Internal Quantum Efficiency of InAlGaN Quantum Well with Emission at 336 nm. Hideki Hirayama1, Yoshiki Yano3, Misato Shimizu2, Nakao Akutsu3, Kou Matsumoto3 and Hajime Okumura2; 1Advanced Devices Laboratory, RIKEN, Saitama, Japan; 2AIST, Tsukuba, Japan; 3Taiyo Nippon Sanso Co. Ltd., Tsukuba, Japan.
10:45 AM FF20.3
Thermalization and Recombination Kinetics of Excitons in thick AlN Epilayers. Till Riemann1, J. Christen1, T. Schulze2, A. Hoffmann2, K. Balakrishnan3, N. Fujimoto3, T. Kitano3, M. Iwaya3, S. Kamiyama3, I. Akasaki3 and H. Amano3; 1Institute of Experimental Physics, Otto-von-Guericke University Magdeburg, Magdeburg, Germany; 2Institute of Solid State Physics, Technical University Berlin, Berlin, Germany; 321st Century COE "Nano-Factory", Meijo University, Nagoya, Japan.
11:00 AM FF20.4
Strong light-matter coupling at room temperature in GaN microcavities with epitaxial (Al,Ga)N Bragg mirrors grown on silicon. Ian Robert Sellers1, Fabrice Semond1, Mathieu Leroux1, Jean Massies1, Joel Leymarie2, Pierre Disseix2, Amie Vasson2 and Anne Line Henneghien2; 1CRHEA-CNRS, Valbonne, France; 2LASMEA, Clermont Ferrand, France.
11:15 AM FF20.5
Optical and Structural Properties of Al0.12Ga0.88N/Al0.5Ga0.5N Microcavities Containing GaN Quantum Wells. Oleg Mitrofanov1, Stefan Schmult1, Michael J. Manfra1 and Richard J. Molnar2; 1Bell Labs, Lucent Technologies, Murray Hill, New Jersey; 2Lincoln Lab, MIT, Boston, Massachusetts.
11:30 AM FF20.6
Optical properties of GaN Photonic Crystal Membrane Nanocavities at Blue Wavelengths Yong-Seok Choi1, Cedrik Meier2, Rajat Sharma2, Kevin Hennessy3, Elaine Haberer2, Shuji Nakamura2 and Evelyn L Hu1,2,3; 1California NanoSystems Institute, University of California, Santa Barbara, California; 2Materials Department, University of California, Santa Barbara, California; 3Department of Electrical and Computer Engineerings, University of California, Santa Barbara, California.
Chair: Dan Koleske
Thursday Afternoon, December 1, 2005
Grand Ballroom (Sheraton)
1:30 PM FF21.1
Growth of Large AlN Single Crystals along the [0001] Direction. Ziad Georges Herro, Dejin Zhuang, Raoul Schlesser and Zlatko Sitar; Materials Science And Engineering, North Carolina State University, RALEIGH, North Carolina.
1:45 PM FF21.2
Oxidation of Aluminum Nitride for Defect Characterization. Kyle Taggart1, James H. Edgar1, Zheng Gu1, Jharna Chaudhuri2, L. Nyakiti2, R. G. Lee2 and J. Wen3; 1Chemical Engineering, Kansas State University, Manhattan, Kansas; 2Mechanical Engineering, Texas Tech University, Lubbock, Texas; 3Center for Microanalysis of Materials, University of Illinois, Urbana, Illinois.
2:00 PM FF21.3
Ammonothermal growth of GaN in an autoclave with ¦Õ 40 mm capacity Tadao Hashimoto1,2, Makoto Saito2,3, Kenji Fujito3, Feng Wu1,2, Paul T Fini1,2, James S Speck1,2 and Shuji Nakamura1,2; 1Materials, University of California, Santa Barbara, Santa Barbara, California; 2ERATO/JST, UCSB group, Santa Barbara, California; 3Mitsubishi Chemical Corporation, Minatoku, Tokyo, Japan.
2:15 PM FF21.4
High quality GaN layers grown on slightly miscut sapphire wafers. Peter Brueckner1, Martin Feneberg2, Klaus Thonke2, Frank Habel3 and Ferdinand Scholz1; 1Optoelectronics Department, University of Ulm, Ulm, Germany; 2Semiconductor Physics Department, University of Ulm, Ulm, Germany; 3Freiberger Compound Materials GmbH, Freiberg, Germany.
2:30 PM FF21.5
High-Quality AlN Layers Grown Using an Inverted HVPE Reactor. Rakesh B. Jain1,2, Jiawei Li1, Arulchakkaravarthi Arjunan1, Mikhail Gaevski1, Edmundas Kuokstis1, Jinwei Yang1 and M. Asif Khan1; 1Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina; 2Sensor Electronic Technology, Inc., Columbia, South Carolina.
2:45 PM BREAK
Chair: Michael Dudley
Thursday Afternoon, December 1, 2005
Grand Ballroom (Sheraton)
3:15 PM *FF22.1
Structure analysis of ELO-GaN grown on sapphire using the x-ray micro-beam of 8-GeV storage ring Takao Miyajima1, Shu Goto2, Yoshihiro Kudo3, Shigetaka Tomiya3, Shingo Takeda4, Hideaki Kurihara4, Kyoko Watanabe4, Madomi Kato4, Nobuhide Hara4, Yoshiyuki Tsusaka4, Junji Matsui4, Masao Ikeda2 and Hironobu Narui1; 1Materials Laboratories, Sony Corp., Atsugi, Kanagawa, Japan; 2Shiroishi Laser Ctr., MSNC, Sony Corp., Shiroishi, Miyagi, Japan; 3Materials Analysis Ctr., Sony EMCS Corp., Atsugi, Kanagawa, Japan; 4Graduate School of Science, Himeji Institute of Technology, Kamigori-cho, Hyogo, Japan.
3:45 PM FF22.2
Intersecting basal plane and prismatic stacking fault structures and their formation mechanisms in GaN Jie Bai and Michael Dudley; SUNY, Stony Brook, Stony Brook, New York.
4:00 PM FF22.3
Dislocation Reduction and Structural Properties of GaN layers Grown on N+-implanted AlN/Si (111) Substrates. Muhammad Jamil, James R. Grandusky, Vibhu Jindal, Eric Irrisou and Fatemeh Shahedipour-Sandvik; Optoelectronics, College of Nanoscale Science and Engineering, University at Albany-State University of New York, Albany, New York.
4:15 PM FF22.4
Electronic properties of non-stoichiometric dislocation cores in GaN Liverios Lymperakis and Joerg Neugebauer; Computational Materials Design Department, Max-Planck-Institut fuer Eisenforschung GmbH, Duesseldorf, Germany.
4:30 PM FF22.5
A New Mechanism for the Formation of Nanopipes in Gallium Nitride. Michael E. Hawkridge and David Cherns; Physics, University of Bristol, Bristol, United Kingdom.
4:45 PM FF22.6
Interfaces and Defects in Nitride based Distributed Bragg Reflectors for Vertical Cavity Surface Emitting Lasers using an AlN/GaN Superlattice Roland Kroeger, Carsten Kruse, Henning Lohmeyer, Juergen Gutowski, Detlef Hommel and Andreas Rosenauer; Institute of Solid State Physics, University of Bremen, Bremen, Germany.
Chairs: Leah Bergman and Nicolas Grandjean
Thursday Evening, December 1, 2005
8:00 PM
Exhibition Hall D (Hynes)
FF23.1
Abstract Withdrawn
FF23.2
Cathodoluminescence micro-analysis of AlN MOVPE-grown on sapphire substrate Juergen Christen, Till Riemann, Armin Dadgar, Juergen Blaesing, Thomas Hempel and Alois Krost; Institute of Experimental Physics, Magdeburg University, Magdeburg, Germany.
FF23.3
Polarized Photoluminescence Study on AlGaN Of AlGaN/GaN Heterostructure. Sachio Kitagawa1, Kenichi Kosaka1, Tadayoshi Tsuchiya3, Akira Suzuki2,3, Tsutomu Araki1 and Yasushi Nanishi1; 1Dept. of Photonics, Ritsumeikan Univ., Kusatsu, Shiga, Japan; 2Res.Org.of Sci & Eng., Ritsumeikan Univ., Kusatsu, Shiga, Japan; 3Advanced HF Device R&D Center, R&D Association for Future Electron Devices, Kusatsu, Shiga, Japan.
FF23.4
Structural and optical properties of MOCVD InAlN epilayers S. Hernandez1,2, D. Amabile1, K. Wang1, E. Nogales1, D. Pastor2, R. Cusco2, L. Artus2, R. W. Martin1, K. P. O'Donnell1, I. M. Watson3 and Consortium the RENiBEl1; 1Department of Physics, University of Strathclyde, Glasgow, Scotland, United Kingdom; 2Institut Jaume Almera, CSIC, Barcelona, Barcelona, Spain; 3Institute of Photonics, University of Strathclyde, Glasgow, Scotland, United Kingdom.
FF23.5
Optical waveguides of wurtzite Al1-xInxN/AlN/Sapphire structures prepared by plasma source molecular beam epitaxy technique Yuriy Volodymyr Danylyuk, Ildar Salakhutdinov, Ivan Avrutsky and Gregory Auner; ECE SSIM, Wayne State University, Detroit, Michigan.
FF23.6
Surface Recombination and Vacuum/GaN/AlGaN Surface Quantum Wells. Xiyao Zhang1, John Muth1, John Roberts2, Pradeep Rajagopal2, Jim Cook2, Eddie Piner2 and Kevin Linthicum2; 1ECE Dept, North Carolina State University, Raleigh, North Carolina; 2Nitronex Corporation, Raleigh, North Carolina.
FF23.7
Temperature Response of the Photoluminescence and Optical-Phonons in GaN and MgZnO Wide-Bandgap Films and Nanocrystallites. Jesse Huso1, Xiang-Bai Chen1, John L. Morrison1, Heather Hoeck1, Dario A. Machleidt1, Frank Lamelas1, Leah Bergman1, Matthew D. McCluskey2 and Andrew P. Purdy3; 1Physics Department, University of Idaho, Moscow, Idaho; 2Department of Physics, Washington State University, Pullman, Washington; 3Chemistry Division, US Naval Research Laboratory, Washington DC, District of Columbia.
FF23.8
Cu induced optical transitions in MOCVD grown Cu doped GaN. Jayantha Senawiratne1, Martin Strassburg2,1, Nikolaus Dietz1, Ali Asghar2, Adam Payne2, William E. Fenwick2, Nola Li2 and Ian T. Ferguson2,3; 1Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia; 2Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia; 3School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia.
FF23.9
Effect of passivation on photoluminescence of GaN. Serguei Chevtchenko1, Kaigui Zhu1, Yong-Tae Moon1, Mikhail A Reshchikov2 and Hadis Morkoc1; 1Electrical Engineering Department, VCU, Richmond, Virginia; 2Department of Physics, VCU, Richmond, Virginia.
FF23.10
Refractive Indices of A-plane GaN Thin Films on R-plane Sapphire. Ailing Cai1, John Muth1, Andrei Osinsky2, J. Q. Xie2, Amir Dabiran2, C. Mueller3 and S. Alterovitz4; 1ECE Dept, North Carolina State University, Raleigh, North Carolina; 2SVT Associates, Eden Prairie, Minnesota; 3Analex Corporation, Cleveland, Ohio; 4NASA Glenn Research Center, Cleveland, Ohio.
FF23.11
High quantum efficiency of photoluminescence in GaN and ZnO. Michael A. Reshchikov1, Xing Gu2, Jeff Nause3 and Hadis Morkoc2,1; 1Dept. of Physics, VCU, Richmond, Virginia; 2Dept. of EE, VCU, Richmond, Virginia; 3Cermet, Inc., Atlanta, Georgia.
FF23.12
Photoluminescence in carbon-doped wurtzite GaN. Michael A. Reshchikov, Dept. of Physics, Virginia Commonwealth University, Richmond, Virginia.
FF23.13
Characterisation of the optical properties of Tm doped and ion implanted GaN Iman S Roqan1, Emilo Nogales1, Carol Trager-Cowan1, Kevin P O'Donnell1, Robert W Martin1, Katharina Lorenz2, Eduardo Alves2, Olivier Briot3 and Georgios Halambalakis3; 1Physics Department, University of Strathclyde, Glasgow, United Kingdom; 2ITN, Sacavem, Portugal; 3Groupe dEtudes des Semiconducteurs, University of Monpellier II, Montpellier, France.
FF23.14
Correlation Between Resistivity and Yellow Luminescence Intensity of MOCVD-Grown GaN Layers. Akihiro Hinoki1, Yuichi Hiroyama3, Tadayoshi Tsuchiya3, Tomoyuki Yamada3, Masayuki Iwami3, Katsuhiro Imada3, Junjiroh Kikawa3, Tsutomu Araki1, Akira Suzuki2,3 and Yasushi Nanishi1; 1Dept. of Photonics, Ritsumeikan Univ., Kusatsu, Shiga, Japan; 2Res. Org. of Sci & Eng., Ritsumeikan University, Kusatsu, Shiga, Japan; 3Advanced HF Device R&D Center, R&D Association for Future Electron Devices, Kusatsu, Shiga, Japan.
FF23.15
Influence of the annealing ambient on structural and optical properties of Er implanted GaN Katharina Lorenz1,2, E. Nogales3, R. Nedelec4, J. Penner4, R. Vianden4, E. Alves1,2, R. W. Martin3 and K. P. O`Donnell3; 1Departamento de Fisica, Instituto Tecnologico e Nuclear, Sacavem, Portugal; 2CFNUL, Lisbon, Portugal; 3Department of Physics, University of Strathclyde, Glasgow, United Kingdom; 4HISKP, University of Bonn, Bonn, Germany.
FF23.16
Electrical Conductivity Measurements of Sputter-Deposited Scandium Nitride Thin Films. Mark E Little1, Matt E. Koepke2 and Andrew Moore1; 1Physics and Engineering, Hope College, Holland, Michigan; 2Physics, West Virginia University, Morgantown, West Virginia.
Chairs: Leah Bergman and Nicolas Grandjean
Thursday Evening, December 1, 2005
8:00 PM
Exhibition Hall D (Hynes)
FF24.1
Donor-like Deep Level Defects in GaN Characterized by Double-correlation Deep Level Transient Spectroscopy Mo Ahoujja1, M. Hogsed2, Y. K. Yeo2 and R. L. Hengehold2; 1Physics, University of Dayton, Dayton, Ohio; 2Engineering Physics, Air Force Institute of Technology, Wright-Patterson AFB, Ohio.
FF24.2
Abstract Withdrawn
FF24.3
Thin Capping Layers For Protection During High Temperature Annealing Of Rare Earth Implanted GaN Emilio Nogales1, Katharina Lorenz2, Robert W. Martin1, Iman S. Roqan1, Kevin P. O'Donnell1, Eduardo Alves2, Sandra Ruffenach3 and Olivier Briot3; 1Department of Physics, University of Strathclyde, Glasgow G4 0NG, United Kingdom; 2ITN, Estrada Nacional 10, 2686-953 Sacavem, Portugal; 3GES, Universite de Montpellier II, 34095 Montpellier, France.
FF24.4
Characterization of Electron Traps in n-Type GaN Layers Grown by MOCVD on Bulk GaN Substrates. Yutaka Tokuda1, Wakana Nakamura1, Youichi Matsuoka1, Hiroyuki Ueda2, Osamu Fujishima2 and Tetsu Kachi2; 1Department of Electrical and Electronics Engineering, Aichi Institute of Technology, Toyota, Japan; 2Toyota Central Research and Development Laboratories, Inc., Nagakute, Japan.
FF24.5
Migration and Interactions of N Interstitials in p-Type GaN. Ryan R. Wixom and Alan F. Wright; Sandia National Laboratories, Albuquerque, New Mexico.
FF24.6
SiH4 exposure of GaN surfaces: A useful tool for highlighting dislocations Rachel A. Oliver, Menno J. Kappers, Joy Sumner, Ranjan Datta and Colin J. Humphreys; Department of Materials Science and Metallurgy, University of Cambridge, Cambridge, United Kingdom.
Chairs: Leah Bergman and Nicolas Grandjean
Thursday Evening, December 1, 2005
8:00 PM
Exhibition Hall D (Hynes)
FF25.1
Strain Relaxation in Indium-rich InGaN/GaN Quantum Well Structures. Pedro M. F. J. Costa, Ranjan Datta, Menno Kappers and Colin Humphreys; Materials Science, University of Cambridge, Cambridge, United Kingdom.
FF25.2
Comparative investigation of quantum-dot-like localization centers in InGaN quantum well and quantum dot structures. K. Sebald, R. Kroeger, H. Lohmeyer, J. Gutowski, T. Yamaguchi and D. Hommel; Institute of Solid State Physics, University of Bremen, Bremen, Germany.
FF25.3
Withdrawn
FF25.4
An Integrating View on the Structural and Optical Properties of InGaN Semiconductor Alloys Sergio Pereira1,2, Rosario Correia1, Eduardo Alves2, Kevin O'Donnell3 and Ian Watson4; 1University of Aveiro, Aveiro, Portugal; 2ITN, Lisbon, Portugal; 3Physics, University of Strathclyde, Glasgow, United Kingdom; 4Institute of Photonics, Glasgow, United Kingdom.
Chairs: Leah Bergman and Nicolas Grandjean
Thursday Evening, December 1, 2005
8:00 PM
Exhibition Hall D (Hynes)
FF26.1
Stresses experienced by AlN films grown on sapphire Jie Bai and Michael Dudley; SUNY, Stony Brook, Stony Brook, New York.
FF26.2
Abstract Withdrawn
FF26.3
Abstract Withdrawn
FF26.4
Lattice defects of heavily doped Mg doped GaN Naoki Matsumura1,2, Toshiyuki Obata1,2, Kiyoshi Ogiwara1, Hideki Hirayama1, Yoshinobu Aoyagi2,1 and Koji Ishibashi1; 1Institute for Physical and Chemical Research(RIKEN), Wako, Japan; 2Department of Electronics and Applied Physics, Tokyo Inst. Tech., Yokohama, Japan.
FF26.5
Characterization of lattice mosaic of a-plane GaN grown on r-plane sapphire by metalorganic vapor-phase epitaxy. Kazuhide Kusakabe1 and Kazuhiro Ohkawa1,2; 1Applied Physics, Tokyo University of Science, Tokyo, Japan; 2JST-ERATO, Tokyo, Japan.
FF26.6
Abstract Withdrawn
FF26.7
Pseudomorphic Stabilization of the Rocksalt Phase of GaN. Vijay Rawat1,2 and Timothy Sands1,2; 1Materials Engineering, Purdue University, West Lafayette, Indiana; 2Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana.
FF26.8
Study of ELOG GaN for Application in the Fabrication of Micro-channels for Optoelectronic Devices Nathan John Berry Ann, Dimitris Korakakis, Kalyan Kasarla, Lee E. Rodak and Nanying Yang; CSEE, WVU, Morgantown, West Virginia.
FF26.9
Characterization and Properties of Extended Defects in GaN Stripes Via 3D Polychromatic Microdiffraction. Rozaliya I. Barabash1, G. E. Ice1, C. Roder2, S. Figge2, S. Einfeldt2, D. Hommel2, T. M. Kantona3, J. S. Speck4, S. P. DenBaars4 and R. F. Davis5; 1Metals and Ceramics Div., Oak Ridge National Laboratory, Oak Ridge, Tennessee; 2Institute of Solid State Physics, University of Bremen, Bremen, Germany; 3Electrical and Computer Engineering Department, College of Engineering, University of California at Santa Barbara, Santa Barbara, California; 4Materials Department, College of Engineering, University of California at Santa Barbara, Santa Barbara, California; 5Materials Science and Engineering Department, North Carolina State University, Raleigh, North Carolina.
FF26.10
What does an (a+c) dislocation core looks like in wurtzite GaN ? Gerard Nouet1, Imad Belabbas1,2, Mohamed Akli Belkhir2, Antoine Bere1,4, Jun Chen3, Sebastien Petit1 and Pierre Ruterana1; 1SIFCOM, ENSICAEN, Caen, France; 2Laboratoire de Physique Theorique, University A.MIRA, Bejaia, Algeria; 3LRPMN, IUT, Alencon, France; 4LPCE, University, Ouagadougou, Burkina Faso.
FF26.11
Electron backscatter diffraction and forescatter imaging of tilt, atomic steps and dislocations in nitride thin films. Carol Trager-Cowan1, Francis Sweeney1, Pat Trimby2, Austin Day2, Ali Gholinia2, Niels-Henrik Schmidt2, Peter J Parbrook3, Angus J Wilkinson4 and Ian M Watson5; 1Physics, Strathclyde University, Glasgow, United Kingdom; 2HKL Technology, Hobro, Denmark; 3EPSRC National Centre for III-V Technologies, Sheffield University, Sheffield, United Kingdom; 4Materials, Oxford University, Oxford, United Kingdom; 5Institute of Photonics, Strathclyde University, Glasgow, United Kingdom.
Chairs: Leah Bergman and Nicolas Grandjean
Thursday Evening, December 1, 2005
8:00 PM
Exhibition Hall D (Hynes)
FF27.1
Growth of GaN layers on Si(001) by MOVPE Fabian Schulze, Juergen Blaesing, Armin Dadgar, Thomas Hempel, Till Riemann, Anette Diez, Juergen Christen and Alois Krost; Insitute of Experimental Physics, Otto-v.-Guericke University Magdeburg, Magdeburg, Germany.
FF27.2
A Comparison between HVTE and MOCVD Growth of AlN - Influence of the Growth Conditions Vladimir Tassev1, David Bliss2, David Weyburne2, Sheng Qi Wang1, Ronnie Synakowski2, Jeffrey Anthis3 and Nam Nguyen3; 1Solid State Scientific Corporation, Hollis, New Hampshire; 2Air Force Research Laboratory, Hanscom AFB, Massachusetts; 3Epichem, Inc., Haverhill, Massachusetts.
FF27.3
Abstract Withdrawn
FF27.4
Two-step Annealing of GaN Buffer Layers for High-quality AlxGa1-xN (x ¡Ö 0.35) by Low-pressure MOCVD Misaichi Takeuchi1,2, Shigenori Hayakawa2, Ryo Kajitani2, Toru Kinoshita3,2, Koji Kawasaki2, Kazuya Takada3 and Yoshinobu Aoyagi2,3; 1RIKEN, Wako, Japan; 2Tokyo Institute of Technology, Yokohama, Japan; 3TOKUYAMA, Tokyo, Japan.
FF27.5
Domain Matching Epitaxy of Cubic and Hexagonal Gallium Nitride Films on Saphhire Substrates Jagdish Narayan1, Punam Pant1, Amit Chugh1, Hong Choi2 and John C. C. Fan2; 1Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina; 2Kopin Corporation, Taunton, Massachusetts.
FF27.6
The Polarity Control of LP-MOVPE GaN by N2 Carrier Process. Seiji Mita, Ramon Collazo, Raoul Schlesser and Zlatko Sitar; Dept. of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina.
FF27.7
Effects of GaN template annealing on the optical and morphological quality of the homoepitaxial overgrown GaN layer James Grandusky, Vibhu Jindal, Muhammad Jamil, Eric Irissou and Fatemeh Shahedipour-Sandvik; Optoelectronics, College of Nanoscale Science and Engineering, University at Albany, Albany, New York.
FF27.8
Predicting ELO GaN Growth Morphologies: Tools for Design. Danxu Du1, David J. Srolovitz1, Michael E. Coltrin2 and Christine C. Mitchell2; 1Dept. of MAE, Princeton University, Princeton, New Jersey; 2PO Box 5800, Sandia National Laboratories, Albuquerque, New Mexico.
FF27.9
Investigation of GaN Layer Morphology Development During The Epitaxial Growth of GaN Layers by MOCVD using the Ga Treatment Step Method. Andrzej Pawel Grzegorczyk1, Corina E. C. Dam1, Paul R. Hageman1, Jan L. Weyher1,2 and Poul K. Larsen1; 1Exp. Solid State Physics III, Institute for Molecules and Materials, Radboud University, Nijmegen, Netherlands; 2Institute of High Pressure Physics, Polish Academy of Sciences, Warsaw, Poland.
FF27.10
Layer Transfer of GaN Layer Growth on Porous GaN Sublayers onto a Desirable Substrate Tien-Hsi Lee1,2, Bao-Jen Pong3, Van-Ga Liao1 and Tsu-Wu Chiang1; 1Mechanical Engineering, National Central University, Chung-Li City, Taiwan; 2Institute of Materials Science and Engineering, National Central University, Chung-Li City, Taiwan; 3Optical Sciences Center, National Central University, Chung-Li City, Taiwan.
FF27.11
MOVPE Growth of AlGaN/AlN on Native AlN Substrates for Device Applications Wayne Liu1, Sandra Schujman1, James Grandusky2, Fatemeh Shahedipour-Sandvik2, Kai Liu3, Michael Shur3, Thomas Gessmann3, Yangang Xi3, E. Fred Schubert3 and Leo Schowalter1; 1Crystal IS, Inc., Green Island, New York; 2State University of New York at Albany-SUNY, Albany, New York; 3Rensselaer Polytechnic Institute, Troy, New York.
FF27.12
Crack Reduction in AlGaN/GaN using an AlN Interlayer. Peter D Cherns, Clifford McAleese, Jon Barnard, Menno J Kappers and Colin J Humphreys; Department of Materials Science and Metallurgy, University of Cambridge, Cambridge, United Kingdom.
Chairs: Leah Bergman and Nicolas Grandjean
Thursday Evening, December 1, 2005
8:00 PM
Exhibition Hall D (Hynes)
FF28.1
Intrinsic Surface Structures of c-GaN(001) Studied by Scanning Tunneling Microscopy Arthur R. Smith1, Hamad Al-Brithen1, Rong Yang1, Muhammad Haider1, Costel Constantin1, Erdong Lu1, Nancy Sandler1 and Pablo Ordejon2; 1Physics & Astronomy, Ohio University, Athens, Ohio; 2ICMAB - CSIC, Campus de la U.A.B., Barcelona, Spain.
FF28.2
Real-time synchrotron x-ray studies of high and low temperature nitridation of c-plane sapphire Yiyi Wang1, Ahmet S. Ozcan1, Gozde Ozaydin1, Karl F. Ludwig1, Hua Zhou2, Randy Headrick2, Anirban Bhattacharyya3, Theodore D Moustakas3 and David Peter Siddons4; 1Physics, Boston University, Boston, Massachusetts; 2Physics, University of Vermont, Burlington, Vermont; 3Electrical and Computer Engineering, Boston University, Boston, Massachusetts; 4National Synchrotron Light Source, Brookhaven National Laboratory, upton, New York.
FF28.3
Growth of Nonpolar AlN and AlGaN on 4H-SiC (1-100) by Molecular Beam Epitaxy Rob Armitage1, Jun Suda1,2 and Tsunenobu Kimoto1; 1Department of Electronics Science and Engineering, Kyoto University, Kyoto, Japan; 2PRESTO, Japan Science and Technology Agency, Kawaguchi, Japan.
FF28.4
Epitaxial c-GaAs/h-GaN heterostructures Vladimir Chaldyshev1, Nikolay Bert1, Yurii Musikhin1, Bent Nielsen2, Emilio Mendez2, Zhixun Ma3 and Todd Holden3; 1Ioffe Institute, St. Petersburg, Russian Federation; 2State University of New York at Stony Brook, Stony Brook, New York; 3Brooklyn College of the City University of New York, Brooklyn, New York.
FF28.5
Engineered Substrates for GaN Applications: Recent Progess for SopSiC Substrates. Bruce Faure1, Alice Boussagol1, Hacene Larheche2, Severine Bressot1, Philippe Bove2 and Fabrice Letertre1; 1Soitec, Bernin, France; 2Picogiga International, Courtaboeuf, France.
FF28.6
Growth of c-GaN Films on the Nitridated ¦Â-Ga2O3 Substrates Using RF-MBE Tsutomu Araki1, Chiharu Morioka1, Junichi Wada1, Keisuke Fujiwara1, Hiroshi Minami1, Shigeo Ohira2, Norihito Suzuki2 and Toetsu Shishido3; 1Dept. of Photonics, Ritsumeikan Univ., Kusatsu, Shiga, Japan; 2Nippon Light Metal Co, Kambara, Shizuoka, Japan; 3Institute for Materials Research, Tohoku University, Sendai, Miyagi, Japan.
FF28.7
Microstructural, Optical and Elastic Properties of ScGaN Thin Films. Michelle A. Moram1, Timothy B. Joyce2, Paul R. Chalker2, Zoe H. Barber1 and Colin J. Humphreys1; 1Dept. Materials Science and Metallurgy, University of Cambridge, Cambridge, United Kingdom; 2Dept. Materials Science and Engineering, University of Liverpool, Liverpool, United Kingdom.
FF28.8
In-situ x-ray studies of InxGa1-xN growth by MOCVD. Fan Jiang1, A. Munkholm2, S. K. Streiffer1, R.-V. Wang1, Carol Thompson1 and G. B. Stephenson1; 1Materials Science Division & Center for Nanoscale Materials, Argonne National Lab, Argonne, Illinois; 2Lumileds Lighting, San Jose, California.
FF28.9
Real-Time X-Ray Studies of Ga Adsorption and Desorption on Sapphire and GaN Surfaces. Ahmet S. Ozcan1, Yiyi Wang1, Gozde Ozaydin2, Karl F. Ludwig1, Anirban Bhattacharyya3, T. D. Moustakas3 and D. Peter Siddons4; 1Physics, Boston University, Boston, Massachusetts; 2Aerospace and Mechanical Engineering, Boston University, Boston, Massachusetts; 3Electrical and Computer Engineering, Boston University, Boston, Massachusetts; 4National Synchrotron Light Source, Upton, New York.
FF28.10
Room Temperature Layer-by-layer Epitaxial Growth of GaN on ZrB2. Yuuji Kawaguchi1, Atsushi Kobayashi1, Jitsuo Ohta1,2 and Hiroshi Fujioka1,2; 1Institute of Industrial Science, The University of Tokyo, Tokyo, Japan; 2Kanagawa Academy of Science and Technology, Kawasaki, Japan.
FF28.11
Epitaxial growth of group-III nitrides on single crystal Fe substrates. Koichiro Okamoto1, Shigeru Inoue1, Nobuyuki Matsuki2, Taewon Kim2, Masaharu Oshima3 and Hiroshi Fujioka1,2; 1Institute of Industrial Science, The University of Tokyo, Tokyo, Japan; 2Kanagawa Academy of Science and Technology (KAST), Kawasaki, Japan; 3Department of Applied Chemistry, The University of Tokyo, Tokyo, Japan.
FF28.12
p-Type Doping of InGaN Films Grown by Molecular Beam Epitaxy. Wei Li1, Theodore D. Moustakas1, Lin Zhou2 and David J. Smith2; 1ECE, Boston University, Boston, Massachusetts; 2Arizona State University, Tempe, Arizona.
FF28.13
Investigation of Compensation in Be-doped Gallium Nitride Grown by Molecular Beam Epitaxy. Kyoungnae Lee1, Brenda VanMil1, Thomas H. Myers1, Andrew Armstrong2, S. A. Ringel2, M. Rummukainen3 and K. Saarinen3; 1Physics, West Virginia University, Morgantown, West Virginia; 2Department of Electrical Engineering, Ohio State University, Columbus, Ohio; 3Laboratory of Physics, Helsinki University of Technology, HUT, Finland.
FF28.14
Characteristics of GaN Epitaxial Films Grown at Room Temperature on Various Lattice Matched Substrates. Hiroshi Fujioka1,2, Jitsuo Ohta1,2, Atsushi Kobayashi1 and Shigeru Inoue1; 1Institute of Industrial Science, The University of Tokyo, Meguro-ku, Tokyo, Japan; 2Kanagawa Academy of Science and Technology, Takatsu-ku, Kawasaki, Japan.
Chairs: Leah Bergman and Nicolas Grandjean
Thursday Evening, December 1, 2005
8:00 PM
Exhibition Hall D (Hynes)
FF29.1
What Makes a Good Substrate for HVPE Growth of GaN? C.E.C. Dam, A. P. Grzegorczyk, P. R. Hageman and P. K. Larsen; Exp. Solid State Physics III, Institute for Molecules and Materials, Radboud Univeristy Nijmegen, Nijmegen, Netherlands.
FF29.2
Depletion Effect and Crystalline Perfection of the Thin GaN and AlN Epitaxial Layers Nikolai N. Faleev1, Mark Holtz1 and Henryk Temkin1; 1ECE, University of Delaware, Newark, Delaware; 2Physics, Texas Tech University, Lubbock, Texas; 3ECE, Texas Tech University, Lubbock, Texas.
FF29.3
Thick AlN and AlGaN Layers Grown by HVPE. Alexander S. Usikov, Vitali A. Soukhoveev, Oleg V. Kovalenkov, Vladimir A. Ivantsov, Alexander L. Syrkin and Vladimir A. Dmitriev; TDI, Inc., Silver Spring, Maryland.
FF29.4
Strain Mapping of Thick HVPE AlN Films using Low Vacuum Cathodoluminescence. Mikhail E. Gaevski, Rakesh B. Jain, Jiawei Li, Arulchakkaravarth Arjunan, Jinwei Yang and M. Asif Khan; Electrical Engineering, University of South Carolina, Columbia, South Carolina.
FF29.5
Temperature and Dislocation Density Effects on the Thermal Conductivity of Iron Doped Semi-insulating Gallium Nitride. Christian Mion1, John Muth1, Drew Hanser2, Edward Preble2 and Mary Ellen Zvanut3; 1ECE Dept, North Carolina State University, Raleigh, North Carolina; 2Kyma Technologies, Raleigh, North Carolina; 3Physics Dept., University of University of Alabama at Birmingham, Birmingham, Alabama.
Chairs: Leah Bergman and Nicolas Grandjean
Thursday Evening, December 1, 2005
8:00 PM
Exhibition Hall D (Hynes)
FF30.1
Single Crystal GaN Growth from Different Powder Sources. Huaqiang Wu1, Phanikumar Konkapaka1, Yuri Makarov2 and Michael G. Spencer1; 1School of Electrical and Computer Engineering, Cornell University, Ithaca, New York; 2Semiconductor Technology Research, Inc., Richmond, Virginia.
FF30.2
Effect of the ambient gas during sublimation growth of AlN crystals. Ziad Georges Herro, Dejin Zhuang, Raoul Schlesser and Zlatko Sitar; Materials Science And Engineering, North Carolina State University, RALEIGH, North Carolina.
FF30.3
Defect Content Evaluation in Single-Crystal AlN Wafers. Robert T Bondokov1, Kenneth E Morgan1, Raj Shetty1, Wayne Liu1, Glen A Slack1, Mark Goorsky2 and Leo J Schowalter1; 1Crystal IS, Inc., Green Island, New York; 2Materials Science and Engineering, UCLA, Los Angeles, California.
FF30.4
Single Crystal Growth of AlN by Sublimation Method. M. Miyanaga, N. Mizuhara, S. Fujiwara, M. Shimazu and H. Nakahata; Sumitomo Electric Ind., Ltd., hyogo, Japan.
FF30.5
Atomic Force Microscope Study on Native Aluminum Nitride Surfaces. Sandra B. Schujman, Wayne Liu, Nicholas Meyer and Leo J. Schowalter; Crystal IS, Inc., Green Island, New York.
FF30.6
Crystal Growth and Defect Characterization of AlN Single Crystals. Shaoping Wang1, Micheal Dudley2 and Andy Timmerman1; 1Fairfield Crystal Technology, LLC, New Milford, Connecticut; 2Materials Science and Engineering Department, SUNY at Stony Brook, Stony Brook, New York.
FF30.7
Structural characterization of GaN single crystal layers grown by vapor transport from a gallium oxide (Ga2O3) powder source Balaji Raghothamachar1, Phanikumar Konkapaka2, Michael Dudley1 and Michael Spencer2; 1Materials Science & Engineering, Stony Brook University, Stony Brook, New York; 2Electrical and Computer Engineering, Cornell University, Ithaca, New York.
FF30.8
Synthesis of Bulk Aluminum and Indium Nitride by Ammonothermal Techniques Bunmi Adekore1, Kelly Rakes2, Buguo Wang3, Michael Callahan2 and Zlatko Sitar1; 1Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina; 2Sensor Directorate, Air-force Reseach Laboratory, Hanscom, Massachusetts; 3Solid-State Scientific Corporation, Hollis, New Hampshire.
Chair: Oliver Briot
Friday Morning, December 2, 2005
Grand Ballroom (Sheraton)
8:00 AM *FF31.1
MOCVD Growth and Characterization of AlGaInN Nanowires and Nanostructures Jung Han1, Arto V Nurmikko2, S. F. Chichibu3 and C. Broadbridge4; 1Electrical Engineering, Yale University, New Haven, Connecticut; 2Division of Engineering, Brown University, Providence, Rhode Island; 3Physics, University of Tsukuba, Tsukuba, Japan; 4Physics, SCSU, New Haven, Connecticut.
8:30 AM FF31.2
Process for Epitaxial Growth of GaN Nanorod Arrays of Varying Diameters on the Same Substrate. Parijat Pramil Deb1, Vijay Rawat1, Mark Oliver1, Eric A. Stach1 and Timothy D. Sands1,2; 1Materials Engineering, Purdue University, West Lafayette, Indiana; 2Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana.
8:45 AM FF31.3
High degree of crystalline perfection in spontaneously grown GaN nanowires. Kris A. Bertness1, A. Roshko1, A. V. Davydov2, I. Levin2, M. D. Vaudin2, J. M. Barker1, J. B. Schlager1, N. A. Sanford1 and L. H. Robins2; 1Electronics and Electrical Engineering Lab, NIST, Boulder, Colorado; 2Materials Science and Engineering Lab, NIST, Gaithersburg, Maryland.
9:00 AM FF31.4
Microphotoluminescence studies on single GaN nanocolumns. Kathrin Sebald1, J. Gutowski1, N. Thillosen2, S. Montanari2, R. Meijers2, R. Calarco2, N. Kaluza2, H. Hardtdegen2 and H. Lueth2; 1Institute of Solid State Physics, University of Bremen, Bremen, Germany; 2Institute of Thin Films and Interfaces and Center of Nanoelectronic Systems for Information Technology, Reseach Center Juelich GmbH, Juelich, Germany.
Chair: Andrew Kim
Friday Morning, December 2, 2005
Grand Ballroom (Sheraton)
9:15 AM *FF32.1
Withdrawn
9:45 AM FF32.2
Luminescence efficiency of InGaN/GaN quantum wells on bulk GaN substrate Axel Hoffmann1, M. Dworzak1, T. Stempel Pereira1, G. Fransen2, S. Grzanka2, T. Suski2, R. Czernecki2, M. Leszczynski2 and I. Grzegory2; 1Institute of Solid State Physics, Technical University Berlin, Berlin, Germany; 2Institute of High Pressures - Unipress, Polish Academy of Sciences, Warsaw, Poland.
10:00 AM BREAK
10:30 AM FF32.3
Quantum Well Network Structures: Investigating Long-Range Thickness Fluctuations in Single InGaN Quantum Wells. Nicole K. van der Laak, Rachel A. Oliver, Menno J. Kappers and Colin J. Humphreys; Materials Science and Metallurgy, University of Cambridge, Cambridge, United Kingdom.
10:45 AM FF32.4
Impact of Stress on Indium Incorporation in InGaN Multi-Quantum Wells and Thick InGaN Films Daniel D. Koleske, Stephen R. Lee, Arthur J. Fischer, Mary H. Crawford, Michael E. Coltrin, Karen C. Cross and Michael J. Russell; Sandia National Laboratories, Albuquerque, NM, New Mexico.
11:00 AM FF32.5
MOVPE Grown InGaN Nano-Islands Studied by STM. Subhashis Gangopadhyay, Thomas Schmidt, Sven Einfeldt, Tomohiro Yamaguchi, Detlef Hommel and Jens Falta; Institute of Solid State Physics, University of Bremen, Bremen, Germany.
11:15 AM FF32.6
Near-field photoluminescence spectroscopy of single InGaN quantum dots. Alexander Mintairov1,2, J. Merz1, A. Vlasov2,1, D. Sizov2, V. Sizov2, V. Lundin2, E. Zavarin2, A. Tsatsul'nikov2 and N. Ledentsov2; 1EE, University of Notre Dame, Notre Dame, Indiana; 2Ioffe Physico-Technical Institute, St Petersburg, Russian Federation.
---
© 1995-2009, Materials Research Society 506 Keystone Drive, Warrendale, PA, 15086-7573, USA
Phone: 724 779.3003, Fax: 724 779.8313, Email: Customer Service, Member Service, Feedback