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Symposium T: Ferroelectric Thin Films XIII

Symposium T: Ferroelectric Thin Films XIII Image

November 27 - December 1, 2005
 
Chairs
Ramamoorthy Ramesh     University of California-Berkeley
Jean-Paul Maria     North Carolina State University
Marin Alexe     Max-Planck-Institute of Microstructure Physics
Vikram Joshi     IC Intelligence Corporation


Proceedings to be published online
(see PUBLICATIONS at www.mrs.org)
as volume 902E
of the Materials Research Society
Symposium Proceedings Series.
This volume may be published in print format after the meeting.
* Invited paper

TUTORIAL


FTT/U/W: Smart Materials -- Fundamentals and Applications
Sunday, November 27, 2005
9:00 AM - 4:00 PM
Room 200 (Hynes)

This tutorial will focus on the broad range of inorganic and organic functional materials that are being studied for applications as ``Smart Materials," including piezoelectrics, multiferroics, and electroactive polymeric materials. The tutorial aims to give the attendee a broad perspective of the various materials and their fundamental science, and then finish up with a summary discussion of their applications. Each segment will include background information, a description of the method, the current state of the art, new trends, and unique advantages and limitations (e.g., for fabrication of particular materials or devices, scalability, unusual geometries, and integration in multistep hybrid device fabrication schemes). The intention of the tutorial is to give the attendees a fundamental background on each method, the strengths of each technique, the ease/difficulty/cost of setting up, and future directions.

Fundamentals of Piezoelectric Materials -- Trolier-McKinstry
Multiferroics -- Viehland
Electroactive Polymers -- Cheng
Applications and Examples -- Madden

Instructors:
Z. Y. Cheng
Auburn University

John Madden
University of British Columbia

Susan Trolier-McKinstry
The Pennsylvania State University

Dwight Viehland
Virginia Tech


SESSION T1: Piezoelectrics
Monday Morning, November 28, 2005
Back Bay D (Sheraton)


8:00 AM *T1.1
Abstract Not Available. L. E. Cross


8:45 AM *T1.2
Giant Piezoelectricity on Silicon for Integrated Sensors and Actuators Chang-Beom Eom, Materialas Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin.

9:15 AM T1.3
Non-Linear Dielectric and Piezoelectric Response in {111} and {100} Oriented 0.5Pb(Yb1/2Nb1/2)O3-0.5PbTiO3 Thin Films Nazanin Bassiri Gharb1, Dragan Damjanovic2 and Susan Trolier-Mckinstry1; 1Materials Science and Engineering Department and Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania; 2Ceramics Laboratory, Ecole Polytechnique Federale de Lausanne, Lausanne, CH-1015, Switzerland.

9:30 AM T1.4
Surface Micromachining Approach to Ferroelectric MEMS Devices Jennifer Lynn Ruglovsky1, Matthew Dicken1, Kenneth Diest1, Mohamed El-Naggar2, Rongjing Zhang2, Guruswami Ravichandran2, David Goodwin2 and Harry A Atwater1; 1Applied Physics, California Institute of Technology, Pasadena, California; 2Mechanical Engineering, California Institute of Technology, Pasadena, California.

9:45 AM BREAK

10:15 AM *T1.5
Engineering Elastic Domain Structures in Epitaxial Films Alexander Roytburd, Materials Science and Eng.Dept, University of Maryland, College Park, Maryland.

10:45 AM T1.6
A real-space non-local phase-field model of ferroelectric domain patterns in complex geometries. Kaushik Dayal and Kaushik Bhattacharya; Engineering, California Institute ofTechnology, Pasadena, California.

11:00 AM *T1.7
High Permittivity Barium Titanate Films and Their Patterning by Micro-contact Printing. Hajime Nagata1, Susan Trolier-McKinstry1, Clive Randall1, Pascal Pinceloup2, James Beeson2, Daniel Skamser2, Michael Randall2 and Azizuddin Tajuddin2; 1The Pennsylvania State University, University Park, Pennsylvania; 2KEMET Electronics, Greenville, South Carolina.

11:30 AM *T1.8
Lead-Free Ferroelectrics and Piezoelectrics. T. Zhao, Department of Physics and Department of Materials Science and Engineering, University of California, Berkeley, California.

SESSION T2: Ferroelectric Thin Film Processing Science
Chair: M. Alexe
Monday Afternoon, November 28, 2005
Back Bay D (Sheraton)

1:30 PM *T2.1
Nano-ferroelectrics. James F. Scott, Cambridge University, Cambridge, United Kingdom.

2:15 PM T2.2
A superlattice approach to the synthesis of ferroelectric SBT thin films using liquid-injection-MOCVD Richard J. Potter1, Ahmed Awad1, Paul R. Chalker1, Peng Wang1, Anthony C. Jones2,3, Timothy C. Q. Noakes4 and Paul Bailey4; 1Engineering, The University of Liverpool, Liverpool, Merseyside, United Kingdom; 2Department of Chemistry, University of Liverpool, Liverpool, Merseyside, United Kingdom; 3Epichem Ltd, Bromborough, Merseyside, United Kingdom; 4CCLRC Daresbury Laboratory, Warrington, Cheshire, United Kingdom.

2:30 PM BREAK

3:30 PM *T2.3
Synthesis and Properties of Barium Titanate Thin Films Deposited on Copper Foil Substrates Jon Ihlefeld1, Seigi Suh2, William Borland2 and Jon-Paul Maria1; 1Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina; 2DuPont Electronic Technologies, Research Triangle Park, North Carolina.

4:00 PM *T2.4
Multiferroic Characteristics and Giant polarizarion of BiFeO3 Thin Films. Masanori Okuyama, Kwi-Young Yun and Dan Ricinschi; Dept. of Systems Innovation, Grad. School of Eng. Sci., Osaka University, Toyonaka, Osaka, Japan.

4:30 PM T2.5
PZT and PLZT thin films on Cu substrates for dielectric and piezoelectric applications: Effect of processing atmosphere and film strain Angus Ian Kingon, Sudarsan Srinivasan and Taeyun Kim; Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina.

4:45 PM T2.6
Dielectric property control using crystal structure anisotropy in bismuth layer-structured dielectric. Muneyasu Suzuki1, Kenji Takahashi1, Takayuki Watanabe1, Tadashi Takenaka3 and Hiroshi Funakubo1,2; 1Department of Innovative and Engineered Materials, Tokyo Institute of Technology, Yokohama, Japan; 2PRESTO, Japan Science and Technology Agency, Saitama, Japan; 3Electrical Engineering, Tokyo University of Tokyo, Noda, Japan.

SESSION T3: Poster Session I
Chairs: M. Alexe, V. Joshi, J.-P. Maria and R. Ramesh
Monday Evening, November 28, 2005
8:00 PM
Exhibition Hall D (Hynes)


T3.1
Transverse piezoelectric coefficients of {100}-textured PZT films with PbTiO3 and PbO seed layers Jian Zhong1,3, Hui Han2, Xiuyu Song1, Periaswamy Padmini1, Sushma Kotru1 and Raghvendra Kumar Pandey1; 1Department of Electrical and Computer Engineering, The University of Alabama, Tuscaloosa, Alabama; 2Department of Physics and Astronomy, the University of Alabama, Tuscaloosa, Alabama; 3Material Science Program, the University of Alabama, Tuscaloosa, Alabama.

T3.2
Crack-Free Thick PZT Film by Microstructural Control. Chee-Sung Park, Gun-Tae Park, Jae-Wung Lee and Hyoun-Ee Kim; Materials Science and Engineering, Seoul National University, Seoul, South Korea.

T3.3
Enhanced Ferroelectric Properties of PZT Film by Inducing Permanent Residual Stress. Jae-Wung Lee, Gun-Tae Park, Chee-Sung Park and Hyoun-Ee Kim; Materials Science and Engineering, Seoul National University, Seoul, South Korea.

T3.4
Preparation of piezoelectric BaTi$_2$O$_5$ nanowires by a simple two-step hydrothermal method. Jian Yu and Mitsuru Itoh; Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama, Japan.

T3.5
Piezoelectric Properties of Lead Zirconate Titanate Films Prepared by Arc Discharged Reactive Ion-Plating Method. Masahiro Akamatsu1, Yoshiaki Yasuda1, Masanao Tani1 and Takashi Iijima2; 1Research & Development Center, Stanley Electric Co., Ltd., Yokohama, Kanagawa, Japan; 2Structural Health Monitoring Group, Research Institute of Instrumentation Frontier, AIST, Tsukuba, Ibaraki, Japan.

T3.6
Determination of the d31 piezoelectric coefficient of PZT thin film using dedicated microelectromechanical systems Cedric Ayela1, Eric Cattan4, Caroline Soyer4, Christian Bergaud3, Martine Pugniere2 and Liviu Nicu1; 1Laboratoire d'analyse et d'architecture des systemes, CNRS, Toulouse, France; 2Centre de Pharmacologie et Biotechnologies pour la sante, INSERM, Montpellier, France; 3Laboratory for integrated micro-mechatronic systems, CNRS / University of Tokyo, Tokyo, Japan; 4Institut d'electronique de microelectronique er de nanotechnologie, CNRS, Lille, France.

T3.7
Modelling of Electromechanical Ferroelectric Fatigue. Santiago A. Serebrinsky1, Irene Arias2 and Michael Ortiz1; 1Graduate Aeronautical Laboratories, California Institute of Technology, Pasadena, California; 2Departamento de Matematica Aplicada III, Universitat Politecnica de Catalunya, Barcelona, Spain.

T3.8
Deposition and Characterization of Graded Ferroelectric Pb(Zr,Ti)O3 Films for Micromechanical Application. Panya Khaenamkaew1,2, Supasarote Muensit2 and Andrei L. Kholkin1; 1Dept. of Ceramics and Glass Engineering / CICECO, University of Aveiro, Aveiro, Portugal; 2Dept. of Physics, Faculty of Science, Prince of Songkla University, Hat yai, Thailand.

T3.9
Effect of Diameter on Longitudinal Displacement in Disk Shape 10-ìm-thick Lead Zirconate Titanate Films. Takashi Iijima1, Satoko Osone1, Yoshiro Shimojo1, Hirotake Okino2 and Takashi Yamamoto2; 1Research Institute of Instrumentation Frontier, National Institute of Advanced Industrial Science and Technology, Tsukuba, Japan; 2Dept. of Comunications Engineering, National Defense Academy, Yokosuka, Japan.

T3.10
Stress and Piezoelectric Activity of ZnO Thin Films. Raegan L. Johnson1, Robert J. Weber1 and Max A. Noack2; 1Electrical Engineering, Iowa State University, Ames, Iowa; 2Microelectronics Research Center, Iowa State University, Ames, Iowa.

T3.11
Structural and Electrical Characterization of PZT on Gold for Micromachined Piezoelectric Membranes. Michelle C. Robinson, Phillip D. Hayenga, Jeong Cho, Dylan Morris, C. D. Richards, R. F. Richards and D. F. Bahr; Washington State University, Pullman, Washington.

T3.12
The Influence of Substrate Miscut on Phase Purity and Piezoelectric Response of Epitaxial Pb(Mg1/3Nb2/3)O 3-PbTiO3 Thick Films on Silicon Dong Min Kim1, Rasmi R. Das1, Chang Beom Eom1, V. Vaithyanathan2, N. B. Gharb2, S. Trolier-McKinstry2, D. G. Schlom2, Y. B. Chen3, H. P. Sun3, X. Q. Pan3, J. Ouyang4 and R. Ramesh4; 1Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin; 2Department of Materials Science and Engineering, Korea Institute of Science and Technology, University Park, Pennsylvania; 3Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan; 4Department of Materials Science and Engineering, University of California-Berkeley, Berkeley, California.

T3.13
Highly-Oriented Ferroelectric PbxBa1-xTiO3 Thin Films on MgO and Si-based Substrates for High Strain Applications: Synthesis, Characterization, and Domain Structure. Mohamed Y. El-Naggar, David A. Boyd and David G. Goodwin; Engineering and Applied Science, California Institute of Technology, Pasadena, California.

T3.14
Theory for Effective Piezoelectric Coupling Factors for Barium Titanate and Lead Titanate Polycrystalline Films. Jennifer Lynn Ruglovsky1, Kaushik Bhattacharya2, Jiangyu Li3 and Harry A. Atwater1; 1Applied Physics, California Institute of Technology, Pasadena, California; 2Mechanical Engineering, California Institute of Technology, Pasadena, California; 3Engineering Mechanics, University of Nebraska, Lincoln, Nebraska.

T3.15
High Aspect Ratio Ferroelectric Structures for High Frequency Ultrasound Transducers. Ioanna Gavriel Mina1, Bharadwaja S. N. Srowthi1, Sungkyu K. Park2, Hyunsoo Kim2, Kyunsoo Choi3, Richard L. Tutwiler4, Insoo Kim3 and Susan Trolier-McKinstry1; 1Materials Science and Engineering and Materials Research Institute, Penn State University, University Park, Pennsylvania; 2Electrical Engineering Department, Penn State University, University Park, Pennsylvania; 3Computer Science and Engineering, Penn State University, University Park, Pennsylvania; 4Applied Research Laboratory, Penn State University, University Park, Pennsylvania.

T3.16
Microstructure of Epitaxial 0.67Pb(Mg1/3Nb2/3)O3-0.33PbTiO3 Films Grown on Miscut (001) Si and SrTiO3 Substrates X. Q. Pan1, Y. B. Chen1, H. P. Sun1, D. M. Kim2 and C. B. Eom2; 1Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan; 2Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin.

T3.17
Thin film dielectric Research for embedded, wireless, mulitfuntional, and Si-compatible applications. Jon-Paul Maria, Mark Losego, Jon Ihlefeld, Dipankar Ghosh, Spalding Craft, Brian Laughlin and Seymen Aygun; Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina.

T3.18
In Situ X-ray Studies of Zr Incorporation during MOCVD PZT Growth Ruey-Ven Wang1,2, S. K Streiffer1,2, G. B. Stephenson1,2, D. D. Fong1,2, F. Jiang1, P. H. Fuoss1, J. A. Eastman1, K. Latifi3 and C. Thompson3; 1Materials Science Division, Argonne National Laboratory, Argonne, Illinois; 2The Center for Nanoscale Materials, Argonne National Laboratory, Argonne, Illinois; 3Department of Physics, Northern Illinois University, DeKalb, Illinois.

T3.19
Growth and Characterization of Epitaxial PZT Thin Films on Ag Buffered Si(001) using RF Sputtering. Chun Wang1, David E. Laughlin2 and Mark H. Kryder1; 1Department of Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania; 2Materials Science and Engineering Department, Carnegie Mellon University, Pittsburgh, Pennsylvania.

T3.20
Chemical Solution Deposition of Ferroelectric Thin Films and Nanotubes Konstantin Anatolievich Vorotilov1, Alexander Sergeevich Sigov1, Olga Michailovna Zhigalina2, Elena Dmitrievna Mishina1 and Vladimir Alexandrovich Vasiljev1; 1Electronics, MIREA, Moscow, Russian Federation; 2Institute of Crystallography, Russian Academy of Sciences, Moscow, Russian Federation.

T3.21
BiFeO3 Doped PZT Thin Films for Embedded FeRAM Devices. Seung-Hyun Kim1, Chang Young Koo1, Jung-Hoon Yeom1, Jong-Hyeon Cheon1, Hyun-Jung Woo1, Jowoong Ha1, Suk-Kyoung Hong2 and Hyunjung Shin3; 1R&D Center, INOSTEK Inc., Ansan, Gyeonggi, South Korea; 2R&D Division, Hynix Semiconductor, Gyeonggi, South Korea; 3School of Advanced Materials Sci. and Eng., Kookmin University, Seoul, South Korea.

T3.22
Growth characteristics of metal-organic chemical vapor deposited Pb(Zr,Ti)O3 films on SrRuO3 electrodes. Sim Joon Seop, Jin Shi Zhao, Hyun Ju Lee, Woo Young Park and Cheol Seong Hwang; Seoul National University, Seoul, South Korea.

T3.23
Deposition of Highly (100) Oriented PZT Film using Lanthanum Nitrate/Nickel Acetate Buffer Layer Jong-Jin Choi1,2, Byung-Dong Hahn1, Joo-Hee Jang3, Woon-Ha Yoon1, Dong-Soo Park1 and Hyoun-Ee Kim2; 1Department of Future Technology, Korea Institute of Machinery and Materials, Chang-Won, Gyeong-Nam, South Korea; 2School of Materials Science and Engineering, Seoul National University, Seoul, South Korea; 3Division of Materials Science and Engineering, Pukyong National University, Busan, South Korea.

T3.24
Characterization of PbxPty alloy formation during deposition of Pb(Zr,Ti)O3 thin films by liquid delivery metal-organic chemical vapor deposition. HyunJu Lee, Jin Shi Zhao, JoonSeop Sim, DongYeon Park and CheolSeong Hwang; Seoul National University, Seoul, South Korea.

T3.25
Enhancement of Dielectric Constant of BaTiO3 Thin Film by Hydrothermal Treatment. Won-Hoon Song, Sung-Taek Lim, Soo-Hyun Lyoo, Hyun-Ju Jin, Hyung-Dong Kang and Yul-Kyo Chung; Samsung Electro-Mechanics, Suwon, South Korea.

T3.26
Effect of Post-Annealing on Electrical Properties of PZT Thick Films Formed by Aerosol Deposition Process Byung-Dong Hahn1, Jong-Jin Choi1,2, Kwan-Ho Ko3, Woon-Ha Yoon1, Dong-Soo Park1 and Doh-Yeon Kim2; 1Department of Future Technology, Korea Institute of Machinery & Materials, Changwon-shi, KyungNam, South Korea; 2School of Materials Science and Engineering, Seoul National University, Seoul, South Korea; 3Division of Materials Science and Engineering, Pukyong National University, Pusan, South Korea.

T3.27
Abstract Withdrawn

T3.28
Epitaxial Growth of CaxBa1-xNb2O6 thin film on (001) MgO by pulsed laser deposition Paul F. Ndione, Mounir Gaidi, Roberto Morandotti and Mohamed Chaker; INRS ENERGIE MATERIAUX ET TELECOMMUNICATIONS, UNIVERSITE DU QUEBEC, Varennes, Quebec, Canada.

T3.29
Characteristic Comparison Between Epitaxial PZT and PMN-PT Thick Films Grown by MOCVD. Shintaro Yokoyama1, Satoshi Okamoto1, Keisuke Saito2, Takashi Iijima3, Hirotake Okino4, Takashi Yamamoto4 and Hiroshi Funakubo1; 1Department of Innovative and Engineered Materials, Tokyo Institute of Technology, Yokohama, Japan; 2Application Laboratory, Bruker AXS, Yokohama, Japan; 3Research Institute of Instrumentation Frontier, National Institute of Advanced Industrial Science and Technology, Tsukuba, Japan; 4Department of Communications Engineering, National Defense Academy, Yokosuka, Japan.

T3.30
Preparation of Ir and IrO2 Electrodes by MOCVD Using a New Ir Precursor Hironori Fujisawa1, Naoya Iwamoto1, Masaru Shimizu1, Hirohiko Niu1, Taishi Furukawa2,3, Kazuhisa Kawano2,3 and Noriaki Oshima2,3; 1University of Hyogo, Himeji, Hyogo, Japan; 2Tosoh Corp., Ayase, Kanagawa, Japan; 3Sagami Chemical Research Center, Ayase, Kanagawa, Japan.

T3.31
Microstructure and ferroelectric properties of ultrathin PbTiO3 films by MOCVD Hironori Fujisawa1, Masaru Shimizu1, Hirohiko Niu1, Yasutoshi Kotaka2 and Koichiro Honda2; 1University of Hyogo, Himeji, Japan; 2Fujitsu Lab. Ltd., Atsugi, Kanagawa, Japan.

T3.32
(S)TEM studies of Epitaxial PbTiO3/SrTiO3 Ferroelectric Thin Films. A. T. J. van Helvoort1, Oystein Dahl2, Bjorn G. Soleim1, Randi Holmestad1 and Thomas Tybell2,3; 1Dept. of Physics, Norwegian University of Science and Technology (NTNU), Trondheim, Norway; 2Dept. of Electronics & Telecommunications, Norwegian University of Science and Technology (NTNU), Trondheim, Norway; 3NTNU Nanolab, Norwegian University of Science and Technology (NTNU), Trondheim, Norway.

T3.33
Iridium Electrodes for Ferroelectric Capacitors Deposited by Liquid-Delivery MOCVD. Marco Lisker, Yves Ritterhaus and Edmund P. Burte; University of Magdeburg, IMOS, Magdeburg, Germany.

T3.34
Growth of Ferroelectric PbZrxTi1-xO3 (PZT) Thin Films by Liqiud-Delivery Metalorganic Chemical Vapor Deposition. Serhiy Matichyn, Marco Lisker and Edmund Burte; Institute of Micro and Sensor Systems, Otto von Guericke University Magdeburg, Magdeburg, Germany.

T3.35
The Properties of ferroelectric domain of PLT thin films Prepared by RF Magnetron Sputtering Hong Liu, Dingquan Xiao, Jiagang Wu, Zhaohui Pu, Jiliang Zhu and Jianguo Zhu; Materials Science, Sichuan University, Chengdu, Sichuan, China.

T3.36
Electroacoustic properties of piezoelectric ZnO and PZT films for FPW devices Sang Hoon Yoon, Jung Hyun Park and Dong-Joo Kim; Materials Engineering, Auburn University, Auburn, Alabama.

T3.37
Influence of the lead-source on PZT 30/70 thin film orientation. Mira Mandeljc, Barbara Malic and Marija Kosec; Electronic Ceramics Department, Jozef Stefan Institute, Ljubljana, Slovenia.

T3.38
A Novel Iridium Precursor for MOCVD Kazuhisa Kawano1,2, Taishi Furukawa1,2, Mayumi Takamori1,2, Ken-ichi Tada1, Tetsu Yamakawa1, Noriaki Oshima2,1, Hironori Fujisawa3 and Masaru Shimizu3; 1Sagami Chemical Research Center, Ayase, Kanagawa, Japan; 2Tosoh Corporation, Ayase, Kanagawa, Japan; 3University of Hyogo, Himeji, Hyogo, Japan.

T3.39
Growth Mechanism of c-Axis-Oriented Epitaxial Bismuth Layer-Structured Dielectric films Kenji Takahashi1, Muneyasu Suzuki1, Mamoru Yoshimoto2 and Hiroshi Funakubo1,3; 1Department of Innovative and Engineered Materials, Tokyo Institute of Technology, Yokohama, Japan; 2Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama, Japan; 3Japan Science and Technology Agency, Saitama, Japan.

T3.40
Abstract Withdrawn

T3.41
Morphotropic Phase Boundaries in Pb-Free Systems Daniel Scott Tinberg and Susan Trolier-McKinstry; Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania.

T3.42
Abstract Withdrawn


T3.43
Ferroelectric and Piezoelectric Properties of the Lanthanum-Substituted Epitaxial BiFeO3 Films on Si Substrate. Ying-Hao Chu1, Tong Zhao1, Qian Zhan1, Florin Zavaliche1, Maria P. Cruz1, Seung-Yeul Yang1, I-Nan Lin2 and R. Ramesh1; 1Department of Materials Science & Engineering, UC Berkeley, Berkeley, California; 2Department of Physics, Tamkang University, Tamsui, Taiwan.

T3.44
Raman Study of Phase Evolution in High Zr Content PZT Films. Chi Yat Yau and Relva C. Buchanan; Chemical and Materials Engineering, University of Cincinnati, Cincinnati, Ohio.

T3.45
Electrical Properties of Au/Bi4-xLaxTi3O12 Thin Film/Si Structures and Reduction of Interface States Atsushi Kohno and Hiroyuki Tomari; Department of Applied Physics, Fukuoka University, Fukuoka, Japan.

T3.46
Epitaxial Growth of Strontium Bismuth Tantalate/Niobate on Buffered Magnesium Oxide Substrates George H. Thomas2,1, David B. Beach1 and Ziling B. Xue2; 1Chemistry, Oak Ridge National Lab, Oak Ridge, Tennessee; 2Chemistry, University of Tennessee, Knoxville, Tennessee.

T3.47
Effects of Thickness and La Substitution on Microstructure of BiFeO3 Thin Films. Qian Zhan1, R. Yu2, T. Zhao1, Y. H. Chu1, U. Dahmen3 and R. Ramesh1; 1Department of Materials Science and Engineering and Department of Physics, University of California, Berkeley, Berkeley, California; 2Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California; 3National Center for Electron Microscopy, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California.

T3.48
Enchaned Pyroelectric Property of PZT Films Deposited on Oxide/Pt Hybrid by Chemical Solution Deposition. Hui Han1, Xiuyu Song3, Jian Zhong2,3, Sushma Kotru3, Padmini Periaswamy3 and R. K. Pandey3; 1Department of Physics and Astronomy, University of Alabama, Tuscaloosa, Alabama; 2Materials Program, University of Alabama, Tuscaloosa, Alabama; 3Department of Electrical and Computer Engineering, University of Alabama, Tuscaloosa, Alabama.

T3.49
Electric-Field-Induced Displacements in Pt/PZT/Pt/SiO2/Si System Investigated by Finite Element Method. Hirotake Okino1, Masahiro Hayashi1, Takashi Yamamoto1, Takashi Iijima2, Shintaro Yokoyama3, Hiroshi Funakubo3 and Nava Setter4; 1Dept. of Communications Eng., National Defense Academy, Kanagawa, Japan; 2Research Institute of Instrumentation Frontier, National Institute of Advanced Industrial Science and Technology, Tsukuba, Japan; 3Dept. of Innovative and Engineered Materials, Tokyo Institute of Technology, Kanagawa, Japan; 4Ceramic Laboratory, Materials Institute, College of Engineering, Swiss Federal Institute of Technology-EPFL, Lausanne, Switzerland.

T3.50
Optical and Structural Properties of Patterned Regions of Thin Single-Crystal Films of LiNbO3 Fabricated by Localized He+ Ion-Implantation. Djordje Djukic1, Ryan M. Roth1, Richard M. Osgood1, Kenneth Evans-Lutterodt2, Hassaram Bakhru3 and Sasha Bakhru3; 1Microelectronics Sciences Laboratories, Columbia University, New York, New York; 2National Synchrotron Light Source, Brookhaven National Laboratory, Upton, New York; 3Department of Physics, SUNY at Albany, Albany, New York.

T3.51
In Situ Measurements of Macroscopic Stress in Thin Film PbxBa1-xTiO3. David A. Boyd, Mohamed Y. El-Naggar and David G. Goodwin; Division of Engineering and Applied Science, California Institute of Technology, Pasadena, California.

T3.52
Enhanced Electrical properties in Mn-doped Bi3.25La0.75Ti3O12 thin films Sushil Kumar Singh, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Yokohama, Japan.

T3.53
PZN-PT Thin Films Derived from MOD Process for MEMS Application. A. L. Ding and X. Y. He; The State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, China.

T3.54
Effect of Composition and Structure on Ferroelectric Response of Bi4-xSmxTi3O12 Maharaj S. Tomar, Ricardo Melgarejo, Sandra Dussan and Ram S. Katiyar; Physics, University of Puerto Rico, Mayaguez, Puerto Rico.

T3.55
Metalorganic chemical vapor deposition of lead-free ferroelectric BiFeO3 films Seung-Yeul Yang1,2, F. Zavaliche2, Y. J. Lee2, Y. H. Chu2, M. P. Cruz2, Q. Zhan2, L. Mohaddes-Ardabili1,2, T. Zhao2, V. Vaithyanathan3, D. G. Schlom3 and R. Ramesh2; 1Materials Science and Engineering, University of Maryland, College Park, Maryland; 2Materials Science and Engineering, University of California, Berkeley, Berkeley, California; 3Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania.

T3.56
Characterization of La, Ti and La/Ti -Codoped Bismuth Ferrite Thin Films by Chemical Solution Deposition Method Chia-Ching Lee and Jenn-Ming Wu; National Tsing Hwa Unervisty, Taiwan, R.O.C., Hsinchu, Taiwan.

T3.57
Switching Spectroscopy Mapping Piezoresponse Force Microscopy (SS-PFM) of Ferroelectric Materials and Nanostructure. Stephen Jesse and Sergei V. Kalinin, Condensed Matter Sciences Division, Oak Ridge National Laboratory, Oak Ridge, TN.

SESSION T4: Ferroelectrics Processing
Tuesday Morning, November 29, 2005
Back Bay D (Sheraton)

8:00 AM *T4.1
Structural, Piezoelectric and Ferroelectric Properties of Self-Assembled PbTiO3 Nanoislands Fabricated by MOCVD Masaru Shimizu1, Masaki Nagata1, Hironori Fujisawa1, Hirohiko Niu1, Koichiro Honda2, Yasutoshi Kotaka2 and Minoru Osada3; 1Dept. of Elect. Eng. & Comp. Sci., University of Hyogo, Himeji, Hyogo, Japan; 2Fujitsu Lab. Ltd., Atsugi, Kanagawa, Japan; 3National Institute for Material Science, Tsukuba, Ibaraki, Japan.

8:30 AM T4.2
The Effect of Nucleation and Growth on Strain and Symmetry in the Ferroelectric PbZrxTi(1-x)O3. Arjen Janssens1, Guus Rijnders1, Dave H. A. Blank1 and Beatriz Noheda2; 1Faculty of Science and Technology and MESA+ Institute for Nanotechnology, University of Twente, Enschede, Netherlands; 2Faculty of Mathematics and Natural Sciences and Materials Science Center, University of Groningen, Groningen, Netherlands.

8:45 AM T4.3
Pb(Zr,Ti)O3/Electrode Interface Layer Engineering of Ferroelectric Random Access Memory Capacitors Ye (Mike) Chen and Paul C. McIntyre; Materials Science and Engineering, Stanford University, Stanford, California.

9:00 AM T4.4
Control Factor of Squareness in P-E Hsyteresis of MOCVD-PZT Films. Hiroshi Funakubo, Akihiro Sumi, Shoji Okamoto, Yoshihisa Honda and Shintaro Yokoyama; Tokyo Institute of Technology, Yokohama, Japan.

9:15 AM T4.5
Processing and Properties of Vertically Aligned High Aspect Ratio Ferroelectric Pb(Zr0.52,Ti0.48)O3 Tubular Structures. Bharadwaja S. N. Srowthi1, Xin Li2, Hui Fang1, Venkat Gopalan1, Theresa Mayer2, Fred Roozeboom3 and Susan Trolier-McKinstry1; 1Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania; 2Electrical Engineering Department, The Pennsylvania State University, University Park, Pennsylvania; 3Philips Research Labs, Eindhoven, Netherlands.

9:30 AM BREAK

10:00 AM T4.6
Ba Substituted Pb(ZrxTi1-x)O3 Thin Films Grown by MOCVD. Susanne Hoffmann-Eifert, Jochen Puchalla and Rainer Waser; IFF/ IEM, Research Centre Juelich, Juelich, Germany.

10:15 AM T4.7
Atomic Layer Deposition of Multi Component Oxide Thin Films Using Liquid Delivery Source Injection. Takayuki Watanabe1, Susanne Hoffmann-Eifert1, Cheol Seong Hwang2 and Rainer Waser1; 1Institute of Solid State Research and CNI - Center of Nanoelectronic Systems for Information Technology-, Research Center Juelich, Juelich, Germany; 2School of Materials Science and Engineering, Seoul National University, Seoul, South Korea.

10:30 AM T4.8
Influence of Crystal Phase and Orientation on Electro-Optic Effect of PLZT Epitaxial Films. Keisuke Sato1,2,3, Masatoshi Ishii1,2,3, Masao Kondo1 and Kazuaki Kurihara1; 1Fujitsu Laboratories Ltd., Atsugi, Kanagawa, Japan; 2Fujitsu Ltd., Kawasaki, Kanagawa, Japan; 3OITDA, Bunkyo-ku, Tokyo, Japan.

10:45 AM T4.9
Ferroelectric phase transformation and dielectric losses of SrTiO3 thin films on Pt electrodes Steffen Schmidt, Jiwei Lu, Sean Keane and Susanne Stemmer; Materials, University of California, Santa Barbara, Santa Barbara, California.

11:00 AM T4.10
Ion Modification for Improvement of Electrical Properties of Perovskite-based Ferroelectric Thin Films Fabricated by Chemical Solution Deposition Method Hiroshi Uchida1, Hiroshi Nakaki1,2, Shintaro Yasui1, Seiichiro Koda1, Risako Ueno2, Hiroshi Funakubo2, Ken Nishida3, Takashi Katoda3 and Minoru Osada4; 1Sophia University, Tokyo, Japan; 2Tokyo Institute of Technology, Yokohama, Japan; 3Kochi University of Technology, Kochi, Japan; 4National Institute of Materials Science, Tsukuba, Japan.

11:15 AM T4.11
Fabrication of Aggressively Dimensioned Tunable BST Capacitors and the Understanding of Cu/BST Adhesion Issues Brian James Laughlin, Dipankar Ghosh and Jon-Paul Maria; Materials Science, North Carolina State Univ., Raleigh, North Carolina.

11:30 AM *T4.12
MOCVD and Process Integration of SBT Based FeRAMs. Solayappan Narayan1, Honyung Lee2, 1Symetrix Corporation, Colorado Springs, Colorado; 2ORNL.

SESSION T5: Field Effects and Gate Dielectrics
Chair: D. Schlom
Tuesday Afternoon, November 29, 2005
Back Bay D (Sheraton)

1:30 PM *T5.1
Ferroic Tunnel Junctions Hermann Kohlstedt1, Nicholas Pertsev2,1, Adrian Petraru1, Alexander Kaiser1 and Rainer Waser3,1; 1IFF-IEM and CNI, FZ Juelich, Juelich, Germany; 2Ioffe Physico-Technical Institute, St. Petersburg, Russian Federation; 3Institut fuer Werkstoffe der Elektrotechnik, RWTH Aachen University of Technology, Aachen, Germany.

2:00 PM T5.2
First principles calculations on the interface properties of epitaxial LaAlO3 and silicon Clemens Foerst1,2,3, Dmitri O. Klenov4, Susanne Stemmer4, Ju Li5, Sidney Yip1, Karlheinz Schwarz3 and Peter Bloechl2; 1Department of Nuclear Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts; 2Institute for Theoretical Physics, Clausthal University of Technology, Clausthal, Germany; 3Institute for Materials Chemistry, Vienna University of Technology, Vienna, Austria; 4Materials Department, University of California, Santa Barbara, California; 5Department of Materials Science and Engineering, Ohio State University, Columbus, Ohio.

2:15 PM T5.3
Electrical Characteristics of Ferroelectric Field Effect Transistors (FeFETs) Incorporating Langmuir-Blodgett Films of a Vinylidene Fluoride Ferroelectric Copolymer. A. Gerber1, M. Fitsilis1, H. Kohlstedt1, R. Waser1, Timothy J. Reece2, Stephen Ducharme2 and E. Rije3; 1Institute of Solid State Research (IFF), and CNI - Center of Nanoelectronic Systems for Information Technology, Research Center Juelich, Juelich, Germany; 2Department of Physics and Astronomy, Center for Materials Research and Analysis, University of Nebraska, Lincoln, Nebraska; 3Institute for Thin Films and Interfaces (ISG 1), and CNI - Center of Nanoelectronic Systems for Information Technology, Research Center Juelich, Juelich, Germany.

2:30 PM BREAK

3:30 PM *T5.4
Electric/Magnetic Field Control of the Interface Band Diagram in Rectifying Oxide Heterojunctions. Harold Y. Hwang1,2, Naoyuki Nakagawa1 and Tomofumi Susaki1; 1Dept. of Advanced Materials Science and Dept. of Applied Physics, University of Tokyo, Chiba, Japan; 2PRESTO, Japan Science and Technology Corporation (JST), Saitama, Japan.

4:00 PM T5.5
Ferroelectric Gates for Modulation of 2D-gas at GaN/AlGaN Interfaces and Ferroelectric Nanolithography Igor Stolichnov, Lisa Malin, Paul Muralt and Nava Setter; IMX-LC, EPFL, Lausanne, Switzerland.

4:15 PM T5.6
Combined PLD and MBE growth of perovskites oxides on Si(001). Andrea Cattoni1, Matteo Cantoni1, Mauro Riva1, Luca Signorini1, Riccardo Bertacco1, Franco Ciccacci1 and Gerd J. Norga1,2; 1L-NESS Center, Politecnico di Milano, Como, Italy; 2Formerly with Science and Technology Department, IBM Research GmbH, Rueschlikon, Switzerland.

4:30 PM T5.7
Resistive switching and I-V hysteresis of metal-ferroelectric-semiconductor-metal structures Rene Meyer1,2, Y. Chen1, Paul C. McIntyre1, Rob Oligschlaeger2 and Rainer Waser2; 1Materials Science and Engineering, Stanford University, Stanford, California; 2CNI, Center of Nanoelectronic Systems for Information Technology, FZ Juelich, Juelich, Germany.

4:45 PM T5.8
Electrical Properties of Ferroelectric/ZnO Heterostructures Emine Cagin, Jeffrey J. Siddiqui, Dingyuan Chen, Song Chua, Vinay Alexander and Jamie D. Phillips; Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan.

SESSION T6: Characterization I
Chair: J.M. Triscone
Wednesday Morning, November 30, 2005
Back Bay D (Sheraton)


8:00 AM *T6.1
Atomic and Electronic Imaging of Heterostructures. David A. Muller1, N. Nakagawa2 and Harold Y. Hwang2; 1Applied Physics, Cornell University, Ithaca, New York; 2Department of Advanced Materials, University of Tokyo, Kashiwa, Chiba, Japan.

8:30 AM T6.2
Terahertz radiation from multiferroic BiFeO3 thin films as a new approach for ferroelectric memory readout and ferroelectric domain imaging microscopy Kouhei Takahashi1, Noriaki Kida2 and Masayoshi Tonouchi1; 1Institute of Laser Engineering, Osaka University, Suita, Osaka, Japan; 2ERATO-SSS, Tsukuba, Ibaraki, Japan.

8:45 AM T6.3
Nonlinear Optical Probing of Polarization Dynamics in Strained Ferroelectric SrTiO3 Aravind Vasudeva Rao, Alok Sharan, Michael Biegalski, Yulan Li, Long-Qing Chen, Darrell Schlom and Venkatraman Gopalan; Materials Research Institute and Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania.

9:00 AM T6.4
Three-dimensional observation of nano-scale ferroelectric domain using scanning nonlinear dielectric microscopy Yasuo Cho and Tomoyuki Sugihara; R.I.E.C. Tohoku Univ., Sendai, Japan.

9:15 AM T6.5
New method of ferroelectric thin film characterization using a polarization instability invoked by a voltage cycling. Yuki Yamada, Susumu Shuto and Iwao Kunishima; SoC Research & Development Center, Toshiba Corp. Semiconductor Company, Yokohama, Japan.

9:30 AM T6.6
Withdrawn

9:45 AM BREAK

10:15 AM *T6.7
Role of Interface on Structure and Properties of Epitaxial Ferroelectric Thin Films. Xiaoqing Pan1, Haiping Sun1, Yanbin Chen1, Jeffrey Haeni2, Darrell G. Schlom2, D. M. Kim3 and Chang-Beom Eom3; 1University of Michigan, Ann Arbor, Michigan; 2Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania; 3Department of Materials Science and Engineering, University of Wisconsin, Madison, Wisconsin.

10:45 AM T6.8
Domain Imaging in Ferroelectrics by Near-field Optical Microsocopy. Stefan Grafstrom, Tobias Otto, Susanne Schneider and Lukas M. Eng; Institute of Applied Photophysics, Dresden University of Technology, D-01062 Dresden, Germany.

11:00 AM T6.9
Visualizing polarization switching in ferroelectrics with time-resolved x-ray microdiffraction Alexei Grigoriev1, Dal-Hyun Do1, Paul G. Evans1, Dong Min Kim1, Chang-Beom Eom1, Bernhard Adams2 and Eric Dufresne2; 1Materials Science and Engineering, University of Wisconsin Madison, Madison, Wisconsin; 2Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois.

11:15 AM T6.10
Domain Dynamics and Coercive Field in BaTiO3 Ultrathin Capacitors. Jiyoung Jo1, D. J. Kim1, Y. S. Kim1, T. K. Song2, J.-G. Yoon3 and T. W. Noh1; 1Physics, Seoul National University, Seoul, South Korea; 2Ceramic Science and Engineering, Changwon National University, Changwon, South Korea; 3Physics, University of Suwon, Suwon, South Korea.

11:30 AM *T6.11
Nanoscopic Studies of Ferroelectric Domain Walls in Epitaxial Perovskite Thin Films. Patrycja Paruch, T. Giamarchi and J.-M. Triscone; DPMC, Physics, University of Geneva, Geneva, Switzerland.

SESSION T7: Characterization II
Chair: D. Muller
Wednesday Afternoon, November 30, 2005
Back Bay D (Sheraton)

1:30 PM *T7.1
In Situ Synchrotron X-ray Studies of Phase Transitions in PbTiO3 Thin Films S. K. Streiffer1,2, G. B. Stephenson1,2, R.-V. Wang1,2, D. D. Fong1,2, F. Jiang1, P. H. Fuoss1, J. A. Eastman1, K. Latifi3 and Carol Thompson3; 1Materials Science Division, Argonne National Laboratory, Argonne, Illinois; 2Center for Nanoscale Materials, Argonne National Laboratory, Argonne, Illinois; 3Department of Physics, Northern Illinois University, DeKalb, Illinois.

2:00 PM T7.2
Extrinsic Contributions to Piezoresponse Force Microscopy. Frank Peter1, Bernd Reichenberg2, Andreas Ruediger1, Rainer Waser1 and Krzysztof Szot1,3; 1cni-Center of Nanoelectronic Systems for Information Technology, Research Centre Juelich, Juelich, Germany; 2aixACCT Systems GmbH, Aachen, Germany; 3Institute of Physics, University of Silesia, Katowice, Poland.

2:15 PM T7.3
Resolution and Image Reconstruction in Piezoresponse Force Microscopy. Sergei V. Kalinin, Stephen Jesse, Junsoo Shin, Arthur P. Baddorf, Albina Y. Borisevich and Ho Nyung Lee; Condensed Matter Sciences Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee.

2:30 PM BREAK

3:30 PM *T7.4
Switching Behavior of FRAM Capacitors Studied by Piezoresponse Force Microscopy. Alexei Gruverman1, Brian J. Rodriguez1, Carsten Dehoff1, John D. Waldrep1, Dong Wu1 and Jeff S. Cross2; 1North Carolina State University, Raleigh, North Carolina; 2Fujitsu Laboratories Ltd, Atsugi, Japan.

4:00 PM *T7.5
Surface Photovoltage Spectroscopy for the Investigation of Perovskite Oxide Interfaces. Elke Beyreuther1, Stefan Grafstrom1, Christian Thiele2, Kathrin Dorr2 and Lukas Eng1; 1Institute of Applied Photophysics, Dresden University of Technology, 01062 Dresden, Germany; 2Institute of Metallic Materials, IFW Desden, 01171 Dresden, Germany.

4:30 PM *T7.6
Study of Oxide Film Growth and Interface Processes Using Integrated Physical Vapor Deposition and In Situ Ion, Electron, and Photon-Based Spectroscopy Techniques. Orlando Auciello, Materials Science Division, Argonne National Laboratory, Argonne, Illinois.

SESSION T8: Size Effects and Nanoscale Phenomena
Chair: S. Streiffer
Thursday Morning, December 1, 2005
Back Bay D (Sheraton)

8:00 AM *T8.1
First-principles calculations on size effects in epitaxial ferroelectric heterostructures Javier Junquera1,3, Philippe Ghosez2 and Karin M. Rabe3; 1CITIMAC, Universidad de Cantabria, Santander, Spain; 2Departement de Physique, Universite de Liege, Sart-Tilman, Belgium; 3Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey.

8:30 AM *T8.2
Ultra-thin epitaxial ferroelectric heterostructures. Nagarajan Valanoor1,3, Javier Junquera2,4, Chun Lin Jia3, Kilho Lee5, Yong Kwan Kim5, Jiaqing He3, Hermann Kohlstedt3, Burc Misirlioglu6, Philippe Ghosez7, Pamir Alpay6, Karin Rabe2, Rainer Waser3 and Sunggi Baik5; 1School of Materials Science and Engineering, University of New South Wales, Sydney, New South Wales, Australia; 2Department of Physics and Astronomy, Rutgers, New Brunswick, New Jersey; 3Centre of Nanoelectronic Systems for Information Technology and IFF, Forschungszentrum Juelich, Juelich, Germany; 4CITIMAC, Universidad de Cantabria, Santander, Spain; 5Ferroelectric Nano Materials Lab, Pohang University of Science and Technology, Pohang, South Korea; 6Institute for Materials Science, University of Connecticut, Storrs, Connecticut; 7Institut de Physique, Universite de Liege, Liege, Belgium.

9:00 AM *T8.3
Studying Ferroelectric Nano Structures with Synchrotron Radiation. Sunggi Baik, Hee Han and Kilho Lee; Materials Science & Engineering, POSTECH, Pohang, Kyungbuk, South Korea.

9:30 AM T8.4
Energy levels of Pb and O vacancies in PbTiO3, and fatigue John Robertson and Ka Xiong; Engineering, University of Cambridge, Cambridge, United Kingdom.

9:45 AM BREAK

10:00 AM *T8.5
Recent Developments in Thermodynamic Theory of Ferroelectric Thin Films. Nikolay A. Pertsev, A. F. Ioffe Physico-Technical Institute, St. Petersburg, Russian Federation; Institut fuer Festkoerperforschung, Forschungszentrum Juelich, Juelich, Germany.

10:30 AM *T8.6
Epitaxial strain effects from first principles Claude Ederer and Nicola A. Spaldin; Materials Research Laboratory, University of California, Santa Barbara, California.

11:00 AM T8.7
Answering Fundamental Questions of Ferroelectric Behaviour at Nanoscale Dimensions through Focused Ion Beam Milling of Single Crystal Materials Alina Schilling1, T. Adams1, R. M. Bowman1, J. M. Gregg1, F. D. Morrison2 and J. F. Scott2; 1Department of Physics and Astronomy, Queen's University, Belfast, United Kingdom; 2Earth Sciences Department, University of Cambridge, Cambridge, United Kingdom.

11:15 AM T8.8
Preparation and characterization of mesostructured thin films of perovskites and ternary oxides by using novel block copolymer templates Bernd Smarsly1, David Grosso2, Heinz Amenitsch3, Clement Sanchez2 and Cedric Boissiere2; 1Colloid Chemistry, Max Planck Institute of Colloids and Interfaces, Potsdam, Germany; 2Chimie de la Matiere Condensee, UMR UPMC-CNRS, Paris, France; 3Austrian Academy of Sciences, Graz, Austria.

11:30 AM *T8.9
Growth of Ferroelectric BaTiO3/SrTiO3 Superlattices by MBE. Darrell G. Schlom1, A. Soukiassian1, W. Tian1, Y. L. Li1, L. Q. Chen1, N. D. Lanzillotti Kimura2, A. Bruchhausen2, A. Fainstein2, D. A. Tenne3, X. X. Xi3, H. P. Sun4, X. Q. Pan4, K. J. Choi, C. B. Eom5, K. Johnston6, K. M. Rabe6, A. Cross7, A. Cantarero7 and R. S. Katiyar8; 1Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania; 2Centro Atomico Bariloche & Instituto Balseiro, C.N.E.A., S. C. de Bariloche, Argentina; 3Department of Physics, Pennsylvania State University, University Park, Pennsylvania; 4Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan; 5Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin; 6Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey; 7Materials Science Institute, University of Valencia, Valencia, Spain; 8Physics Department, University of Puerto Rico, San Juan, Puerto Rico.

SESSION T9: Size Effects II
Chair: V. Nagarajan
Thursday Afternoon, December 1, 2005
Back Bay D (Sheraton)

1:30 PM *T9.1
Ferroelectricity in Ultrathin Perovskite Films. C. Lichtensteiger1, L. Despont2, P. Abei2, E. Bousquet3, P. Ghosez3 and Jean-Marc Triscone1; 1DPMC, University of Geneva, Geneva, Switzerland; 2Institut de Physique, Universite de Neuchatel, Neuchatel, Switzerland; 3Departement de Physique, Universite de Liege, Sart-Tilman, Belgium.

2:00 PM T9.2
Ultraviolet Raman Spectroscopy of Ferroelectric BaTiO3/SrTiO3 Superlattices. Dmitri A. Tenne1, Xiaoxing Xi1,2,3, Arsen Soukiassian2,3, Venugopalan Vaithyanathan3, Wei Tian3, Darrell G. Schlom2,3, Axel Bruchhausen4, Alejandro Fainstein4, Yulan Li2, Long-Qing Chen2, Xiaoqing Pan5, Andres Cantarero6 and Ram S. Katiyar7; 1Physics, The Pennsylvania State University, University Park, Pennsylvania; 2Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania; 3Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania; 4Centro Atomico Bariloche & Instituto Balseiro, San Carlos de Bariloche, Argentina; 5Materials Science and Engineering, The University of Michigan, Ann Arbor, Michigan; 6Materials Science Institute, The University of Valencia, Valencia, Spain; 7Department of Physics, The University of Puerto Rico, San Juan, Puerto Rico.

2:15 PM T9.3
Strain, symmetry, and polarization in artificial ferroelectric superlattices. Ho Nyung Lee, Hans M. Christen, Matthew F. Chisholm, Christopher M. Rouleau and Douglas H. Lowndes; Condensed Matter Sciences Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee.

2:30 PM T9.4
First-principles modeling of ferroelectric nanowires Philippe Ghosez1, Gregory Geneste1, Eric Bousquet1 and Javier Junquera2; 1Physique, Universite de Liege, Liege, Belgium; 2CITIMAC, Univesidad de Cantabria, Santander, Spain.

2:45 PM BREAK

3:15 PM T9.5
Growth-structure-property Relations in Epitaxial Ferroelectric Pb(Zr20Ti80)O3/SrRuO3/SrTiO3(001) Heterostructures: The Role of Threading Dislocations. Ionela Vrejoiu, Gwenael Le Rhun, Lucian Pintilie, Nikolai D. Zakharov, Dietrich Hesse and Marin Alexe; Max-Planck-Institute of Microstructure Physics, Halle, Germany.

3:30 PM T9.6
Real-time X-ray Diffraction Studies of Pulsed Laser Deposition: Collision Dynamics and Relaxation Kinetics. Aaron Fleet1,4, Darren Dale2,4, Yuri Suzuki3,4 and Joel D. Brock1,4; 1Applied & Engineering Physics, Cornell University, Ithaca, New York; 2Materials Science & Engineering, Cornell University, Ithaca, New York; 3Materials Science, UC Berkeley, Berkeley, California; 4Cornell Center for Materials Science, Cornell University, Ithaca, New York.

3:45 PM T9.7
Ion-beam probing of He+ and H+ ion-sliced LiNbO3 and SrTiO3 Ryan M. Roth1, Djordje Djukic1, Richard M. Osgood1, Sasha Bakhru2 and Hassaram Bakhru3; 1Department of Electrical Engineering, Columbia University, New York, New York; 2Department of Material Sciences and Engineering, Johns Hopkins University, Baltimore, Maryland; 3College of Nanoscale Science and Engineering, SUNY, Albany, New York.

4:00 PM T9.8
Ferroelectric domain switching and piezoelectric response in BaTiO3 nanowire. Zhaoyu Wang and Min-Feng Yu; Department of Mechanical and Industrial Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois.

4:15 PM T9.9
Polarization Quenching in Ultrathin Ferroelectric Films. Chun-gang Duan1,2, Renat F. Sabirianov2, Sitaram S. Jaswal2, Wai-Ning Mei1 and Evgeny Y. Tsymbal2; 1Department of Physics, University of Nebraska-Omaha, Omaha, Nebraska; 2Department of Physics and Astronomy, University of Nebraska-Lincoln, Lincoln, Nebraska.

4:30 PM *T9.10
A fundamental thickness limitation of ultrathin ferroelectric SrRuO3/BaTiO3/SrRuO3 capacitors Dong Jik Kim1, Ji Young Jo1, Yong Su Kim1, Tae Kwon Song2, Jong-gul Yoon3 and Tae Won Noh1; 1Seoul National University, Seoul, South Korea; 2Changwon National University, Changwon, South Korea; 3University of Suwon, Suwon, South Korea.

SESSION T10: Poster Session II
Chairs: M. Alexe, V. Joshi, J.-P. Maria and R. Ramesh
Thursday Evening, December 1, 2005
8:00 PM
Exhibition Hall D (Hynes)


T10.1
Fabrication of Ba0.48Sr0.52TiO3 /LaNiO3 Artificial Superlattice Structure by rf Sputtering. Hsin-Yi Lee1, Heng-Jui Liu1, Kun-Fu Wu2 and Chih-Hao Lee2; 1Research Division, National Synchrotron Radiation Research Center, Hsinchu, Taiwan; 2Department of Engineering and System Science, National Tsing Hua University, Hsinchu, Taiwan.

T10.2
Strain Relaxation and Dislocation Confinement in Epitaxial SrTiO3 by Two-Step Growth Technique and the Resulting Dielectric Response. Tomoaki Yamada, Vladimir O. Sherman, Alexander K. Tagantsev, Dong Su, Paul Muralt and Nava Setter; Laboratoire de Ceramique, Ecole Polytechnique Federale de Lausanne, Lausanne, Switzerland.

T10.3
Embedded High Dielectric Thin Film Capacitors for New Generation Printed Wiring Boards. Seung-Hyun Kim, Chang Young Koo, Jung-Hoon Yeom, Jong-Hyeon Cheon, Hyun-Jung Woo and Jowoong Ha; R&D Center, INOSTEK Inc., Ansan, Gyeonggi, South Korea.

T10.4
Abstract Withdrawn

T10.5
Development of interfacial layers in barium titanate films on Ni coated silicon. Tanawadee Dechakupt, Hajime Nagata and Susan Trolier-McKinstry; Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania.

T10.6
Low-Voltage Ferroelectric Phase Shifters Operated at the Microwave Regime. Zhiyong Zhao1, Xiaoyan Wang1, Dave McStay1, J. Stevenson Kenney2 and Andrew T. Hunt1; 1nGimat Co., Atlanta, Georgia; 2School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia.

T10.7
The effects of PBB on the dielectric properties of BST film Jin Cheol Kim and Jun Rok Oh; PCB, ACI division, Suwon, South Korea.

T10.8
Application of net-shape processing for ferroelectric capacitor preparation. Vladimir Petrovsky and Harlan U. Anderson; EMARC, University Missouri-Rolla, Rolla, Missouri.

T10.9
MOCVD of CaCu3Ti4O12 Thin Films: Synthesis, Characterization and Dielectric Properties. Raffaella Lo Nigro1, Graziella Malandrino2, Roberta G. Toro2 and Ignazio L. Fragala'2; 1IMM-CNR, Catania, Italy; 2Dipartimento di Scienze Chimiche, Universita' di Catania, Catania, Italy.

T10.10
Defect and Contact Properties — Their Influence on Shape and Magnitude of I(V)-Leakage Current Curves in High-Permittivity Thin Film Capacitors. Herbert Schroeder, IEM am IFF and cni, Forschungszentrum Juelich GmbH, Juelich, Germany.

T10.11
Structural and Electrical Properties of BaxSr1-xTiO3 Bi-layer Thin Films by Pulsed Laser Deposition. Kumaravinothan Sarma, Peter K. Petrov, Bin Zou, Hsin-I Chien, Rayon A. Walters and Neil McN. Alford; Physical Electronics and Materials Centre, London South Bank University, London, United Kingdom.

T10.12
Dielectric and optical properties of highly oriented pulsed laser deposited BaTiO3 thin films. Jussi Antero Hiltunen1,2, Dilan Seneviratne1, Yong Woo Choi1, Michael Stolfi1, Jyrki Lappalainen3, Vilho Lantto3 and Harry L. Tuller1; 1MIT, Cambridge, Massachusetts; 2VTT Electronics, Technical Research Centre of Finland, Oulu, Finland; 3Electrical Engineering, University of Oulu, Oulu, Finland.

T10.13
Pb0.6Ba0.4ZrO3 Thin Films for Tunable Microwave Applications. Lin-Jung Wu and Jenn-Ming Wu; National Tsing Hua University, Hsinchu, Taiwan.

T10.14
Electrical Properties of (Ba,Sr)TiO3 Thin Films Revisited: The Case of MOCVD Grown Films on Pt Electrodes. Peter Ehrhart and Reji Thomas; IFF, FZ-Juelich, Juelich, Germany.

T10.15
Polarization switching in epitaxial BiFeO3 films Florin Zavaliche1,2, M. P. Cruz3, T. Zhao1,2, P. Shafer2, S. Y. Yang2, R. R. Das4, D. M. Kim4, C. B. Eom4 and R. Ramesh1,2; 1Department of Materials Science and Engineering, University of California, Berkeley, California; 2Department of Physics, University of California, Berkeley, California; 3Centro de Ciencias de la Materia Condensada (CCMC) - UNAM, Ensenada, B.C., Mexico; 4Department of Materials Science and Engineering, University of Wisconsin, Madison, Wisconsin.

T10.16
W doping effects on Ba0.5Sr0.5TiO3 thin films for radio-frequency applications JeaHo Oh, Christophe Durand, Sebastien Delprat and Mohamed Chaker; INRS-EMT, Varennes, Quebec, Canada.

T10.17
Dielectric properties of SrTiO3 thin films under external electrical fields in THz frequency range Kenta Kotani, Mukul Misra, Iwao Kawayama, Hironaru Murakami and Masayoshi Tonouchi; Institute of Laser Engineering, Osaka University, Suita, Osaka, Japan.

T10.18
Stress-influence on the Properties of Mg doped SrTiO3 Thin Films Paula Maria Vilarinho, Olena Okhay and Aiying Wu; Department of Ceramics and Glass Engineering, University of Aveiro, Aveiro, Portugal.

T10.19
Dielectric and Ferroelectric Properties KNN-LT-LS Thin Films William Kurt Simon, Kian Kerman, E. K. Akdogan and A. Safari; Ceramic and Materials Engineering, Rutgers University, Piscataway, New Jersey.

T10.20
Characteristics of thin ion-sliced bonded SrTiO3 thin films Yoo Seung Lee1, Djordje Djukic1, Ryan M. Roth2, Richard M. Osgood1,2, Sasha Bakhru3 and Hassaram Bakhru3; 1Electrical Engineering, Columbia University, New York, New York; 2Applied Physics and Applied Mathematics, Columbia University, New York, New York; 3Ion Beam Laboratory, SUNY, Albany, New York.

T10.21
Comparative Study of Effects of Annealing on Barium Strontium Titanate Thin Films with Different Deposition Methods. Venkataramanan Gurumurthy1,3, Sathyaharish Jeedigunta1,3, Ashok Kumar2,3 and John W. Bumgarner4; 1Electrical Engineering, University of South Florida, Tampa, Florida; 2Department of Mechanical Engineering, University of South Florida, Tampa, Florida; 3Nanomaterials and Nanomanufacturing Research Center, University of South Florida, Tampa, Florida; 4Center for Ocean Technology, University of South Florida, Tampa, Florida.

T10.22
Effects of Chemical Mechanical Polishing on Barium Strontium Titanate Thin Films for Tunable Microwave Applications. Venkataramanan Gurumurthy1,3, Subrahmanya Mudhivarthi2,3 and Ashok Kumar2,3; 1Electrical Engineering, University of South Florida, Tampa, Florida; 2Department of Mechanical Engineering, University of South Florida, Tampa, Florida; 3Nanomaterials and Nanomanufacturing Research Center, University of South Florida, Tampa, Florida.

T10.23
Integrating Barium Titanate Based Optical Devices with Silicon and Amorphous Substrates. Matthew J. Dicken, Young-Bae Park, Jennifer L. Ruglovsky and Harry A. Atwater; Applied Physics, California Institute of Technology, Pasadena, California.

T10.24
Thermionic Emission Current in Metal-SrTiO3 Contacts – An Approach Based on Ab-initio Band Structure Calculations Herbert Schroeder and Phivos Mavropoulos; IEM am IFF and cni, Forschungszentrum Juelich GmbH, Juelich, Germany.

T10.25
Epitaxial Growth by Pulsed Laser Deposition of Dielectric Ba0.5Sr0.5TiO3 Thin Film on MgO, Intended for a Microwave Phase Shifter. Y. Y. Tse1, P. M. Suherman2, T. J. Jackson2 and I. P. Jones1; 1Metallurgy and Materials, The University of Birmingham, Birmingham, United Kingdom; 2Electronic, Electrical and Computer Engineering, The University of Birmingham, Birmingham, United Kingdom.

T10.26
Strontium Oxide Template Monolayers by Surface Reactions of Metal-Organic Precursors with Si(100). Amalia Cuadra and Brian G. Willis; Chemical Engineering, University of Delaware, Newark, Delaware.

T10.27
Transient-Current Measurement of the Trap Charge Density at Interfaces of a Thin-Film Metal/Ferroelectric/Metal Structure. Lyuba A. Delimova1, Igor V. Grekhov1, Dmitri V. Mashovets1, Sangmin Shin2, June-Mo Koo3, Suk-Pil Kim3 and Youngsoo Park3; 1Solid State Electronics Division, Ioffe Physicotechnical Institute Russian Academy of Sciences, St.Petersburg, Russian Federation; 2Materials and Devices Laboratory, Samsung Advanced Institute of Technology, Suwon, South Korea; 3Process Engineering Laboratory, Samsung Advanced Institute of Technology, Suwon, South Korea.

T10.28
Giant Electroresistance Effect in Ferroelectric Tunnel Junctions. Mikhail Ye Zhuravlev1, Renat F. Sabirianov2, Sitaram S. Jaswal1 and Evgeny Y. Tsymbal1; 1Department of Physics and Astronomy, University of Nebraska-Lincoln, Lincoln, Nebraska; 2Department of Physics, University of Nebraska-Omaha, Omaha, Nebraska.

T10.29
Device Parameter Dependence of Electrical Properties of Ferroelectric-Gate BLT/ ITO TFTs. Yue Shen, Masaru Senoo and Eisuke Tokumitsu; Precision and Intelligence Laboratory, Tokyo Institute of Technology, Yokohama, Japan.

T10.30
SBT/SSBT (Sm-Substituted SBT) Stacked Capacitor by Sol-Gel Technique for Ferroelectric-Gate Transistors. Hirokazu Saiki, Syahhibul Azwar and Eisuke Tokumitsu; Precision and Intelligence Laboratory, Tokyo Institute of Technology, Yokohama, Kanagawa, Japan.

T10.31
Electrical Properities of (Pb1-xBax)ZrO3 Ferroelectric Films with Metal/Ferroelectric/Metal (MFM) and Metal/Ferroelectric/Insulator/Semiconductor (MFIS) Structures. Hung-Yao Chen and Jenn-Ming Wu; Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan.

T10.32
Ferroelectric Monolayer Newly Developed by Vacuum Evaporation Shuichiro Kuwajima1, Kenji Ishida2, Toshihisa Horiuchi2, Hirofumi Yamada2 and Kazumi Matsushige2; 1Nanotechnology Support Project, Kyoto University, Kyoto, Japan; 2Department of Electronic Science and Engineering, Kyoto University, Kyoto, Japan.

T10.33
Modulating the depletion layer of Si semiconductor by organic ferroelectric dipole Kenji Ishida1, Hiroshi Uemura1, Shuichiro Kuwajima2, Toshihisa Horiuchi1, Hirofumi Yamada1 and Kazumi Matsushige1; 1Electronic Science and Engineering, Kyoto University, Kyoto, Japan; 2Nanotech Support Program, Kyoto university, Kyoto, Japan.

T10.34
Nonlinear Electrical Dipolar Switching at Single Molecular Scale. Jaewu Choi, G. S. Khara and Youngsik Song; Electrical and Computer Engineering, Wayne State University, Detroit, Michigan.

T10.35
Phase-Field Simulation of Ferroelectric Domain Switching in Polycrystalline Bulk and Thin Films. Samrat Choudhury, Yulan Li and Long Qing Chen; Materials Science and Enginnering, The Pennsylvania State University, University Park, Pennsylvania.

T10.36
Field induced morphology transition of 90° domain structure of PbZr0.2Ti0.8O3 film on Si substrate Zhengkun Ma1, J. Slutsker3, J. Ouyang1, F. Zavaliche2, T. Zhao2, R. Ramesh2, J. Melngailis1 and A. Roytburd1; 1Materials Research Science and Engineering Center, Department of Materials Science and Engineering, University of Maryland at College Park, College Park, Maryland; 2Department of Materials Science and Engineering, University of California at Berkeley, Berkeley, California; 3Materials Science and Engineering Laboratory, Metallurgy Division,, National Institute of Standardsand Technology, Gaithersburg, Maryland.

T10.37
Probing the piezoelectric effect in PZT thin films using time-resolved synchrotron x-ray microdiffraction. Dal-Hyun Do1, Alexei Grigoriev1, Dong Min Kim1, Chang-Beom Eom1, Paul G. Evans1 and Eric Dufresne2; 1Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin; 2Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois.

T10.38
Structural and Ferroelectric Properties of Pr doped SrTiO3 thin films Prepared by Pulsed Laser Deposition. M. P. Cruz1,2, Y. H. Chu2, A. C. Duran1 and J. M. Siqueiros1; 1Centro de Ciencias de la Materia Condensada (CCMC)-UNAM, Ensenada, B.C., Mexico; 2Department of Materials Science and Department of Physics, University of California, Berkely, California.

T10.39
Ferroelectric Domain Structure in Epitaxial BiFeO3. M. P. Cruz1,2, F. Zavaliche1, P. Shafer1, Y. H. Chu1, T. Zhao1, S. Y. Yang1, R. R. Das3, D. M. Kim3, C. B. Eom3 and R. Ramesh1; 1Department of Materials Science and Department of Physics, University of California, Berkely, California; 2Centro de Ciencias de la Materia Condensada (CCMC)-UNAM, Ensenada, B.C., Mexico; 3Department of Materials Science and Engineering, University of Wisconsin, Madison, Wisconsin.

T10.40
Abstract Withdrawn


T10.41
Real Information Recording in Ferroelectric Data Storage Medium with Memory Density of 1 Tbit/inch2 Tanaka Kenkou, Hiranaga Yoshiomi and Cho Yasuo; Research Institute of Electrical Communication, Tohoku University, Sendai, Japan.

T10.42
10Tbit/inch2 Ferroelectric Data Storage with Offset Voltage Application Method. Sunao Hashimoto and Yasuo Cho; Research Institute of Electrical Communication, Tohoku University, Sendai, Japan.

T10.43
Analysis of imprint mechanism in ferroelectric memory using molecular-dynamics simulation Hiromu Miyazawa1, Yasuaki Hamada1, Takamitsu Higuchi1, Takeshi Kijima1, Eiji Natori1, Tatsuya Shimoda1, Masato Yoshiya2 and Tamio Oguchi3; 1TPRC, EPSON, Fujimi-machi, Nagano-ken, Japan; 2JFCC, Nagoya, Aichi-ken, Japan; 3ADSM, Hiroshima University, Higashi Hiroshima, Hiroshima-ken, Japan.

T10.44
Dynamics of polycrystalline macro-domains in ferroelectric films. Yahin Ivry1, Vera Lyahovitsky1, Ilya Zon1, Ellen Wachtel2, Igor Lubomirsky1 and Alexander Roytburd3; 1Materials & Interfaces, Weizmann Institute, Rehovot, Israel; 2Chemical Research Support, Weizmann Institute, Rehovot, Israel; 3Materials Science and Engineering, University of Maryland, College Park, Maryland.

T10.45
Subtle morphological change of step-flow grown SrRuO3 thin films. Ho Nyung Lee1, Mina Yoon1, Zhenyu Zhang1, Wei Hong2, Zhigang Suo2, Matthew F. Chisholm1, Sergei Kalinin1, Hans M. Christen1 and Douglas H. Lowndes1; 1Condensed Matter Sciences Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee; 2Division of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts.

T10.46
First-Principles Studies of Phase Stability and the Neutral Atomic Vacancies in LiNbO3, NaNbO3 and KNbO3. Akio Shigemi and Takahiro Wada; Materials Chemistry, Ryukoku University, Otsu, Japan.

T10.47
Piezoelectric Boron Nitride Nanotube. Jie Hu, Zhaoyu Wang and Min-Feng Yu; Department of Mechanical and Industrial Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois.

T10.48
Characterization of Lead Zirconate Titanate Nanocrystal Powders Prepared by a Hydrothermal Method. Lingjuan Che, Jinrong Cheng, Chao Chen and Zhongyan Meng; Shanghai University, Sahnghai, China.

T10.49
Synthesis and Controlling Shapes of BST Nanoparticles via Polymer Template Method. Shinji Shibamoto1,2, Tooru Kinoshita2 and Kikuo Okuyama3; 1Japan Chemical Innovation Institute, Higashi-Hiroshima, Hiroshima, Japan; 2New Technology Research Lab., Sumitomo Osaka Cement Co., Ltd., Funabashi, Chiba, Japan; 3Graduate School of Engineering, Hiroshima University, Higashi-Hiroshima, Hiroshima, Japan.

T10.50
Surface Potential Investigation on Nano Domain Formation in Lithium Tantalate Single Crystal. Mirai Katoh and Yasuo Cho; Research Institute of Electrical Communication, Tohoku University, Sendai, Miyagi, Japan.

T10.51
Phase Transition Temperature of Ferroelectric Thin Film Evaluated by Four-State Potts Model. Wing Yee Winnie Chung and Veng Cheong Lo; Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China.

T10.52
Effect of PLT Buffer Layers on the PZT Thin Films in Study of Scaling-Down Ferroelectric Materials. Li Dong Hua, Lee Eun Sun, Chung Hyun Woo, Ahn Byung Du and Sang Yeol Lee; Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea.

T10.53
Electronic properties of SrTiO3 / wide-gap insulator oxide heterointerfaces Keisuke Shibuya1, Tsuyoshi Ohnishi1, Takayuki Uozumi1, Taisuke Sato1, Hideomi Koinuma2 and Mikk Lippmaa1; 1University of Tokyo, Kashiwa, Chiba, Japan; 2National Institute for Materials Science, Tsukuba, Ibaraki, Japan.

T10.54
Transparent Ferroelectric-Gate Thin Film Transistors with Nonvolatile Memory Operation using BLT/ITO Structures. Eisuke Tokumitsu, Masaru Senoo and Etsu Shin; Precision and Intelligence Lab., Tokyo Institute of Technology, Yokohama, Japan.

T10.55
Out-of-phase Boundary (OPB) Nucleation in Epitaxial Complex Oxides Mark A. Zurbuchen1,2,3, James Lettieri3, Yunfa Jia3, Juergen Schubert4,3, David J. Comstock3, Wei Tian3,5, Goh Asayama3, Stacy B. Knapp3, Marilyn E. Hawley6, Altaf H. Carim7,3, Xiaoqing Pan5, Stephen K. Streiffer2,8 and Darrell G. Schlom3; 1Ceramics Division, National Institute of Standards and Technology, Gaithersburg, Maryland; 2Materials Science Division, Argonne National Laboratory, Argonne, Illinois; 3Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Maryland; 4Institut fuer Schichten und Grenzflaechen, Forschungszentrum Juelich, Juelich, Germany; 5Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan; 6Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, New Mexico; 7Scientific User Facilities Division, U.S. Department of Energy, Washington, District of Columbia; 8Center for Nanoscale Materials, Argonne National Laboratory, Argonne, Illinois.

T10.56
Characterization of Domain Walls in Ferroelectrics using Atomic Force (AFM) and Piezo Response Force Microscopy (PFM) Christian Franck, Guruswami Ravichandran and Kaushik Bhattacharya; Division of Engineering and Applied Science, California Institute of Technology, Pasadena, California.

T10.57
Local ferroelectric switching properties in BiFeO3 films and structures Catalin Harnagea, Cristian Cojocaru and Alain Pignolet; University of Quebec, INRS-EMT, Varennes, Quebec, Canada.

T10.58
Compositional Symmetry Breaking in Ferroelectric Bilayers. Shan Zhong1, Pamir Alpay1 and Joseph Mantese2; 1Materials Science and Engineering, University of Connecticut, Storrs, Connecticut; 2Materials, Components and Packaging, Delphi Research Laboratories, Shelby Township, Michigan.

T10.59
Nano-Tubes-Patterned Ferroelectric Thin Films of Barium-Strontium Titanate (BST) Hydrothermally-Synthesized at 200 C. Nitin P. Padture1, Xuezheng Wei2, Rosalia Poyato2 and Bryan Huey2; 1Department of Materials Science and Engineering, Ohio State University, Columbus, Ohio; 2Department of Materials Science and Engineering, University of Connecticut, Storrs, Connecticut.

T10.60
Tailoring Nanoscale Domain Size in Epitaxial Ferroelectric Multilayers Ting Zhu1,2 and Zhigang Suo1; 1Division of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts; 2George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia.

T10.61
Asymmetric Properties of Strained SrTiO3 Films on DyScO3 Substrates Michael D. Biegalski1, D. D. Fong2, J. H. Haeni1, Y. L. Li1, A. Sharan1, W. Tien1, V. Gopalan1, L. Q. Chen1, P. H. Fuoss2, J. A. Eastman2, X. Q. Pan3, M. E. Hawley4, W. Chang5, S. W. Kirchoefer5, A. K. Tagantsev6, R. Uecker7, P. Reiche7, Stephen K. Streiffer2, Darrell G. Schlom1 and Susan Trolier-McKinstry1; 1Material Science and Engineering, Pennsylvania State University, University Park, Pennsylvania; 2Materials Science Division, Argonne National Laboratory, Argonne, Illinois; 3Department of Materials Science and Engineering, The University of Michigan, Ann Arbor, Michigan; 4Materials Science & Technology Division, Los Alamos National Laboratory, Los Alamos, New Mexico; 5Naval Research Laboratory, Washington, District of Columbia; 6Laboratoire de Ceramique, Ecole Polytechnique Federale de Lausanne, Lausanne, Switzerland; 7Institute for Crystal Growth, Berlin, Germany.

T10.62
The Microwave Frequency Dielectric Response of (Ba,Sr)TiO3 Thin Films With Anisotropic Epitaxy. William Kurt Simon1, E. K. Akdogan1, Jeffery Bellotti2 and A. Safari1; 1Ceramic and Materials Engineering, Rutgers University, Piscataway, New Jersey; 2Electronic Sciences and Technology Devision, Naval Research Laboratory, Washington D.C., District of Columbia.

T10.63
(00l) Epitaxial Silver Tantalate Niobate, Ag(TaxNb1-x)O3, Thin Films on (001)SrRuO3 /(001)LaAlO3 Substrates by Chemical Solution Deposition. Mustafa Burak Telli, Srowthi S. N. Bharadwaja, Michael Biegalski, Jian-Gong Cheng and Susan Trolier-McKinstry; Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania.

T10.64
High Tunability of Ba0.6Sr0.4TiO3 Film in an In-Plane Interdigital Capacitor Geometry. Jong Hoon Cho, Jung Ho Kim, Tesu Kim and Kookrin Char; Center for Strongly Correlated Materials Research, School of Physics, Seoul National University, Seoul, South Korea.

T10.65
Molecular Volume and Polarizabilities for Zr-Sn-Ti Oxide Dielectrics. S. C. Barron and R. B. van Dover; Materials Science and Engineering, Cornell University, Ithaca, New York.

T10.66
Ferroelectric Characterization of Vanadium Doped Strontium Bismuth Niobates for Memory Devices. Kanhaiya Lal Yadav and Anjan Sil; Physics, Indian Institute of Technology, Roorkee, Roorkee, Uttaranchal, India.

T10.67
Correlation between domain structures and dynamics in highly (001)-oriented epitaxial PZT thin films Yong Kwan Kim, Hitoshi Morioka and Hiroshi Funakubo; Department of Innovative and Engineered Materials, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Yokohama, Japan.

T10.68
Influence of Spatially Varying Local Strain on Piezoelectric Hysteresis Characterized Experimentally and Theoretically. Ramesh Nath1, Edwin R. Garcia2, John E. Blendell2 and Bryan D. Huey1; 1Materials Science and Engineering, University of Connecticut, Storrs, Connecticut; 2Materials Engineering, Purdue University, West Lafayette, Indiana.

T10.69
Effective Electromechanical Response of Porous Piezoelectric Materials Ronit Kar-Gupta and T. A. Venkatesh; Mechanical Engineering, Tulane University, New Orleans, Louisiana.

T10.70
Abstract Withdrawn

T10.71
A real 3D PZT capacitor for high density ferroelectric random access memory and its electrical properties Sangmin Shin1, June-Mo Koo1, Suk-Pil Kim1, Bum-Seok Seo2, Jung-Hyun Lee2, Hionsuck Baik3, Jang-Ho Lee3, Mino Yang3, Hee Han4,5, Sunggi Baik4,5, Jae-Young Choi5, Yong Jun Park5 and Youngsoo Park1; 1Devices Lab., Samsung Advanced Institute of Technology, Suwon, South Korea; 2Nano Fabrication Center, Samsung Advanced Institute of Technology, Suwon, South Korea; 3AE Center, Samsung Advanced Institute of Technology, Suwon, South Korea; 4Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, South Korea; 5Beamline Division, Pohang Accelerator Laboratory, Pohang, South Korea.



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