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Symposium DD: Solid-State Lighting Materials and Devices

Chairs | Symposium Support | Tutorial  | Original Call for Papers

Tuesday Sessions | Wednesday Sessions

TUTORIAL DD

Light-Emitting Diodes and Solid-State Lighting

Monday, April 17, 2006
1:30 – 5:00 p.m.
Room 2007, (Moscone West)

This tutorial will present the operating principles, fabrication, and applications of light-emitting diodes and solid-state lighting technology. The objective is to provide an overview of device fundamentals, device physics, design, and fabrication techniques. Topics include radiative and nonradiative recombination mechanisms, spontaneous lifetime, basic electrical and optical properties, designs for high internal and external efficiency, high-power devices, visible-spectrum and white light-emitting diodes, packaging fundamentals, and resonant-cavity devices. The tutorial will also cover areas related to general lighting such as human vision, eye sensitivity, luminous efficiency, and the color-rendering capability of white-light sources.

Instructor:
E. Fred Schubert, Rensselaer Polytechnic Institute

* Invited paper

NOTE EARLY START

8:00 AM *DD1.1
Organic Phosphine Oxides and Sulfides as Wide Bandgap Electron Transporting Materials. Paul Burrows, L.S. Sapochak, A. Padmaperuma, P. Vecchi and A. Q. Hong; Pacific Northwest National Lab, Richland, Washington.

8:30 AM *DD1.2
Chain Morphologies in Blue-Emitting Polyfluorenes: Impact on Light-Emitting Diodes. Suchi Guha, Physics, University of Missouri, Columbia, Missouri.

9:00 AM *DD1.3
Dye-Dispersed Polymer Electrophosphorescent Devices for Solid State Lighting Franky So¹ and Mathew Mathai²; ¹Department of Materials Science and Engineering, University of Florida, Gainesville, Florida; ²Plextronics, Inc., Pittsburgh, Pennsylvania.

9:30 AM *DD1.4
Challenges and Progress in Developing OLEDs for Lighting Anil Duggal, GE Corporate Research Center, Niskayuna, New York.

10:00 AM BREAK

10:30 AM DD1.5
Investigation of a Novel Light-blue-emitting Fluorescent Guest/Host System with Excellent Lifetime. Philipp van Gemmern¹, Stefan P. Grabowski², Herbert Boerner², Volker van Elsbergen², Hans-Peter Loebl², Edward Young², Holger Heil³, Rocco Fortte³, Heinrich Becker³, Holger Kalisch¹, Michael Heuken^1,4 and Rolf H. Jansen¹; ¹Institut fuer Theoretische Elektrotechnik, RWTH Aachen, Aachen, Germany; ²Philips Research Laboratories, Aachen, Germany; ³Merck OLED Materials GmbH, Frankfurt/Main, Germany; ⁴AIXTRON AG, Aachen, Germany.

10:45 AM DD1.6
Electroluminescent Devices from Ionic Transition Metal Complexes for Lighting Applications. Jason Slinker¹, Jonathan Rivnay¹, John DeFranco¹, Samuel Flores-Torres², Michael Lowry³, Leonard Soltzberg⁴, Ji-Seon Kim⁵, Stefan Bernhard³, Richard Friend⁵, Hector Abruna² and George Malliaras¹; ¹Materials Science and Engineering, Cornell University, Ithaca, New York; ²Chemistry and Chemical Biology, Cornell University, Ithaca, New York; ³Department of Chemistry, Princeton University, Princeton, New Jersey; ⁴Department of Chemistry, Simmons College, Boston, Massachusetts; ⁵Cavendish Laboratory, University of Cambridge, Cambridge, United Kingdom.

11:00 AM DD1.7
Fabrication and Development of Low-voltage Thin Films Quantum-dot Light-emitting Devices. Cristina Bertoni, Diego E Gallardo and Steve C Dunn; Advanced Materials, Cranfield University, Cranfield, BEDFORDSHIRE, United Kingdom.

11:15 AM DD1.8
Spatial Confinement of Optical Phonon in ZnO Quantum Dots. Wen-Feng Hsieh¹, Kuo-Feng Lin¹, Hsin-Ming Cheng² and Hsu-Cheng Hsu¹; ¹National Chiao Tung Univ., Department of Phoonics, Hsinchu, Taiwan; ²Material Research Laboratories, Industrial Technology Research Institute, Hsinchu, Taiwan.

11:30 AM DD1.9
Light Emission Properties of ZnO Quantum Dots and Nanocrystals Khan A Alim¹, Vladimir A Fonoberov¹, Alexander A. Balandin^1,2, Alex Rozhin², Andrea Fasoli² and Andrea C Ferrari²; ¹Nano-Device Laboratory, Department of Electrical Engineering, University of California - Riverside, Riverside, California; ²Department of Engineering, University of Cambridge, Cambridge, United Kingdom.

11:45 AM DD1.10
Metal-nano-antenna-enhanced Luminescence of Solid-state Light Emitters. Hans Mertens¹, Julie S. Biteen², Harry A. Atwater² and Albert Polman¹; ¹Center for Nanophotonics, FOM-Institute AMOLF, Amsterdam, Netherlands; ²California Institute of Technology, Pasadena, California.

1:30 PM DD2.1
Novel SiAlON-based Oxynitride Phosphors and their Applications in White Light-emitting Diodes. Rong-Jun Xie¹, Naoto Hirosaki¹, Mamoru Mitomo¹ and Ken Sakuma²; ¹National Institute for Materials Science, Tsukuba, Japan; ²Fujikura Ltd, Sakura, Japan.

1:45 PM DD2.2
Sulfide Phosphors for LED White Light Sources. Weiyi Jia¹, Dongdong Jia², Anura Goonewardene², Xiaomei Guo³, Yingyin K. Zou³ and Kewen Li³; ¹Physics, University of Puerto Rico, Mayaguez, Puerto Rico; ²Department of Physics and Geology, National Tsing Hua University, Lock haven, Pennsylvania; ³Boston Applied Technology,Inc., Woburn, Massachusetts.

2:00 PM DD2.3
Synthesis, Structure and Luminescent Properties of Selenogallate phosphors Amitava Choudhury and Peter K. Dorhout; Department Of Chemistry, Colorado State University, Fort Collins, Colorado.

2:15 PM DD2.4
Effect of Rapid Thermal Annealing on the Correlation of Strain and Optical Properties of Self-assembled InAs Quantum Dots. Hsing-Yeh Wang¹, H. Niu², C.H Chen³, S.C. Wu³ and C.P. Lee¹; ¹Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan; ²Nuclear Science and Technology Development Center, National Tsing Hua University, Hsinchu, Taiwan; ³Physics, National Tsing Hua University, Hsinchu, Taiwan.

2:30 PM BREAK

3:00 PM DD2.5
Pulsed Laser Deposited YAG:Ce and Ba3MgSi2O4:Eu,Mn Thin Films for Phosphor Converted White Light Emitting Diodes. M Kottiasamy², P Thiyagarajan^1,2 and Mamidanna S Ramachandra Rao^1,2; ¹Department of Physics, Indian Institute of Technology Madras, Chennai, Tamil Nadu, India; ²Materials Science Research Centre, Indian Institute of Technology Madras, Chennai, Tamilnadu, India.

3:15 PM DD2.6
UV and VUV Luminescence Properties of Eu2+ in Ba2MSi2O7 (M=Mg, Zn). ZhiYa Zhang and YH Wang; Department of Materials Science, Department of Materials Science, School of Physical Science and Technology, Lanzhou University, Lanzhou, China.

3:30 PM DD2.7
Pulsed Laser Deposited ZnGa2O4:Mn and Zn2SiO4:Mn Phosphor Thin Films for Display Applications. P Thiyagarajan^1,2, M Kottiasamy² and Mamidanna S Ramachandra Rao^1,2; ¹Department of Physics, Indian Institute of Technology Madras, Chennai, Tamil Nadu, India; ²Materials Science Research Centre, Indian Instituteof Technology Madras, Chennai, Tamilnadu, India.

3:45 PM DD2.8
Pb2+ and Ce3+ Doped SrZnO2: New Blue Luminescent Phosphors Alp Manavbasi and Jeffrey C LaCombe; Materials Engineering, University of Nevada Reno, Reno, Nevada.

4:00 PM DD2.9
Role of threading dislocations on domain-epitaxially grown ZnO films using XRD and TEM Wei-Rein Liu^1,2, Chiang-Hung Hsu^1,2, F. S.-S Chien³, Keng.S Liang² and Wen-Feng Hsieh¹; ¹Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu, Taiwan; ²National Synchrotron Radiation Research Center, Hsinchu, Taiwan; ³Department of Physics, Tunghai University, Taichung, Taiwan.

4:15 PM DD2.10
Correlated scanning capacitance and conductive atomic force microscopy studies of dislocations in ZnO film. Shih-Yang Huang¹, Wei-Rein Liu^2,4, F.S.-S Chien³, Chiang-Hung Hsu^2,4, Keng.S Liang⁴, Wen-Feng Hsieh² and Tzeng-Feng Liu¹; ¹Institute of Nanotechnology, National Chiao Tung University, Hsinchu, Taiwan; ²Department of Photonics and institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu, Taiwan; ³Department of Physics, Tunghai University, Taichung, Taiwan; ⁴National Synchrotron Radiation Research Center, Hsinchu, Taiwan.

4:30 PM DD2.11
Cathodoluminescence and Optical Modeling of AlGaN Nano-crystals for Biofluorescence Applications. Steven F. LeBoeuf¹, Radislav Potyrailo¹, Todd Tolliver¹, Alexei Vertiatchikh¹, Sheila Tandon¹, Joleyn Balch¹, Rui Chen¹, Fatima Shahedipour-Sandvik², James R. Grandusky² and Vibhu Jindal²; ¹GE Global Research, Niskayuna, New York; ²College of Nanoscale Science and Engineering, UAlbany-SUNY, Albany, New York.

DD3.1
UV and VUV Spectroscopy of ns2-type Ions Co-doped YBO3:Eu3+ Red Phosphor. L.L. Wang¹, Y.H. Wang¹ and W.X. Hua²; ¹Department of Material Science, School of Physical Science and Technology, Lanzhou University, Lanzhou, China; ²Continuing Education School, Lanzhou University, Lanzhou, China.

DD3.2
Photoluminescence Enhancement of PEG-modified YAG:Ce³⁺ Nanophosphor Prepared by Glycothermal Method. Ryo Kasuya¹, Tetsuhiko Isobe¹, Hitoshi Kuma² and Junichi Katano²; ¹Department of Applied Chemistry, Keio univ., Yokohama, Kanagawa, Japan; ²Idemitsu Kosan Co., Ltd., Sodegaura, Chiba, Japan.

DD3.3
Optical Properties of Alkali Doped Group 4 Nano Materials. Hal Gokturk, PEWLA, Mountain View, California.

DD3.4
Improving Performance of Organic Light-emitting Devices Based on Flexible Substrates Guangfeng Wang¹, Xiaoming TAO² and Wei CHEN³; ¹The HongKong Polytechinic University, Hong Kong, Hong Kong; ²The Hong Kong Polytechnic University, Hong Kong, Hong Kong; ³The Hong Kong Polytechnic University, Hong Kong, Hong Kong.

DD3.5
Transferred to DD2.4

NOTE EARLY START

8:00 AM *DD4.1
Nanoheteroepitaxy for Efficient GaN LEDs on Silicon? Steve Hersee^1,3, Sang Han^2,3, Xinyu Sun^1,3, Xin Wang^1,3, Mohammad Ferdous^1,3 and Qiming Li^2,3; ¹Department of Electrical and Computer Engineering, University of New Mexico, Albuquerque, New Mexico; ²Department of Chemical and Nuclear Engineering, University of New Mexico, Albuquerque, New Mexico; ³Center for High Technology Materials, University of New Mexico, Albuquerque, New Mexico.

8:30 AM *DD4.2
Improvements in Light-extraction Efficiency of Light-emitting Diodes. Jong Kyu Kim and E. Fred Schubert; Electrical, Computer and Systems Engineering, Rensselaer Polytechnic Institute, Troy, New York.

9:00 AM DD4.3
Continuous wave lasing from ground state of InAs quantum dots with GaInNAs capping layer grown by MOCVD Rei Hashimoto^1,2, Mitsuhiro Kushibe^1,2, Mizunori Ezaki^1,2, Genichi Hatakoshi^1,2, Masao Nishioka^2,3 and Yasuhiko Arakawa^2,3,4; ¹EDL, Toshiba RDC, Tokyo, Japan; ²Nanoelectronics Collaborative Research Center, Tokyo, Japan; ³IIS, University of Tokyo, Tokyo, Japan; ⁴RCAST, University of Tokyo, Tokyo, Japan.

9:15 AM DD4.4
MOCVD Growth of Ordered GaN Nanopillar Arrays Without the use of Additional Catalysts Xinyu Sun, Xin Wang, Mike Fairchild and Stephen D. Hersee; Center for High Technology Materials, University of New Mexico, Albuquerque, New Mexico.

9:30 AM DD4.5
Abstract Withdrawn

9:45 AM DD4.6
Epitaxial GaN layer growth using nitrogen enriched TiN buffer layers Kazuhiro Ito¹, Yu Uchida¹, Susumu Tsukimoto¹, Yuhei Ikemoto², Koji Hirata², Naoki Shibata² and Masanori Murakami¹; ¹Department of Materials Science and Engineering, Kyoto University, Kyoto, Japan; ²Optoelectronics Division, Toyoda Gosei Co. Ltd., Nakashima, Aichi, Japan.

10:00 AM BREAK

10:30 AM *DD4.7
High Power LEDs. Robert Karlicek, Luminus Devices, Inc., Woburn, Massachusetts.

11:00 AM DD4.8
AlGaN UV LEDs Emitting at 340 nm Grown on AlN Bulk Substrates. Yangang Xi^1,2, Thomas Gessmann^1,3, Kaixuan Chen^1,2, Xiaolu Li^1,2, Jong Kyu Kim^1,3, E. Fred Schubert^1,2,3, Wayne Liu⁴, Joseph A. Smart⁴ and Leo J. Schowalter⁴; ¹Future Chips Constellation, Rensselaer Polytechnic Institute, Troy, New York; ²Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York; ³Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, New York; ⁴Crystal IS, Inc., Green Island, New York.

11:15 AM DD4.9
Local Indium Segregation and Band Gap Variations in High Efficiency Green Light Emitting InGaN/GaN Diodes. Joerg R. Jinschek^1,2, Rolf Erni^3,4 and Christian Kisielowski¹; ¹National Center for Electron Microscopy (NCEM), Lawrence Berkeley National Laboratory (LBNL), Berkeley, California; ²Institute for Critical Technology and Applied Science (ICTAS) / Department of Materials Science and Engineering, Virginia Polytechnic Institute and State University (Virginia Tech), Blacksburg, Virginia; ³Department of Chemical Engineering and Materials Science, University of California Davis, Davis, California; ⁴Now at, FEI Electron Optics, Eindhoven, Netherlands.

11:30 AM *DD4.10
Ultrafast Carrier Transport and Recombination in III-N Heterostructures Alexander N Cartwright, Fei Chen, Maurice Cheung, Madalina Furis and Sung-Jin Kim; Department of Electrical Engineering, University at Buffalo, The State University of New York, Buffalo, New York.

1:30 PM DD5.1
Abstract Withdrawn

2:00 PM DD5.2
Effect of HVPE GaN Substrate Condition on the Characteristics and Performance of 405nm LEDs. James R Grandusky¹, Muhammad Jamil¹, Vibhu Jindal¹, Fatemeh Shahedipour-Sandvik¹, Hai Lu², Xian-An Cao² and Edmund B Kaminsky²; ¹College of Nanoscale Science and Engineering, University at Albany, Albany, New York; ²GE Global Research Center, Niskayuna, New York.

2:15 PM DD5.3
Selective Area Heteroepitaxy of Nano-AlGaN UV Excitation Sources for Biofluorescence Application. Fatemeh Shahedipour-Sandvik¹, Vibhu Jindal¹, James R. Grandusky¹, Steven LeBoeuf², Joleyn Balch² and Todd Tolliver²; ¹UAlbany-State Univ. of New York, Albany, New York; ²General Electric Global Research Center, Niskayuna, New York.

2:30 PM DD5.4
Investigation of Piezoelectric Field Effects on Emission Spectra of GaN QDs Grown on AlN. Nanying Yang and Dimitris Korakakis; West Virginia Univ., Morgantown, West Virginia.

2:45 PM DD5.5
Infrared Reflectance of Optic Phonon Modes in AlGaN Epitaxial Layers Grown on Sapphire Substrates. Gensheng Huang¹, H. H. Yao¹, Y. T. Wang¹, T. C. Lu¹, H. C. Kuo¹, S. C. Wang¹ and L. -H. Peng¹; ¹Department of Photonics & Institute of Electro-Optical Engineering,, Hsinchu,, Taiwan; ²Department of Photonics &, Institute of Electro-Optical Engineering,, Hsinchu, Taiwan.

3:00 PM BREAK

3:30 PM *DD5.6
A Novel Non-Imaging Optic for Multi-Color, Multi-Die, LED Arrays. Jim Mazzochette and Edward Bailey; Lamina Ceramics, Inc., Westampton, New Jersey.

4:00 PM DD5.7
Reliability study of GaN-based UV LEDs Alexei Vertiatchikh¹, Xian-An Cao¹, Steven LeBoeuf¹, Richard Gawrelski², Maxine Gibeau² and Thomas Stecher³; ¹Semiconductor Technology Lab, GE GRC, Niskayuna, New York; ²RF and Photonics Laboratory, GE GRC, Niskayuna, New York; ³MicroSystems & MicroFluidics Laboratory, GE GRC, Niskayuna, New York.

4:15 PM DD5.8
Growth of cubic GaN on Si (100) Substrates. Suzuka Nishimura¹, Tomohiko Takeuchi², Sigeya Naritsuka³ and Kazutaka Terashima¹; ¹Shonan Institute of Technology, Kanagawa, Japan; ²Electrical Engineering, Keio University, Hiyoshi Yokohama, Kanagawa, Japan; ³Meijyo University, Nagoya, Japan.

4:30 PM DD5.9
Integrated Fresnel Microlenses for Deep UV Applications. Mikhail E. Gaevski, Shuai Wu, Maxim Shatalov and M.Asif Khan; Electrical Engineering, University of South Carolina, Columbia, South Carolina.

4:45 PM DD5.10
Design of High Efficiency Packages for White-light-emitting Diode Lamps. Hong Luo^1,2, Jong Kyu Kim^1,3, E. Fred Schubert^1,2,3, Jaehee Cho⁴, Cheolsoo Sone⁴ and Yongjo Park⁴; ¹Future Chips Constellation, Rensselaer Polytechnic Institute, Troy, New York; ²Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Troy, New York; ³Electrical, Computer, and Systems Engineering Department, Rensselaer Polytechnic Institute, Troy, New York; ⁴Photonics Program Team, Samsung Advanced Institute of Technology, Suwon, South Korea.

DD6.1
Thermoreflectance Measurements of the Temperature Distributions in Laser Diodes with Non Absorbing Mirror. Tomasz Jan Ochalski¹, Dorota Pierscinska¹, Kamil Pierscinski¹, Andrzej Malag², Agata Jasik², Anna Kozlowska² and Maciej Bugajski¹; ¹Institute of Electron Technology, Warszawa, Poland; ²Institute of Electronic Materials Technology, Warszawa, Poland.

DD6.2
Luminescent Properties of Mn-Si-O Thin Films Grown by Pulsed Laser Deposition Takashi Hirate, Kazumoto Takizawa and Tomomasa Satoh; Kanagawa University, Yokohama, Japan.

DD6.3
Characterization and Elimination of the Dry Etching-damaged Layer in GaN-based LED. Sang Jun Lee¹, Su Gwang Son¹, Sun Heu Kim¹, Hyo Jung Kim¹, Si Hyun Park² and June Key Lee¹; ¹School of Material Science and Engineering, Chonnam National University, Gwangju, South Korea; ²Department of Photonic Engineering, Chosun University, Gwangju, South Korea.

DD6.4
Effect of dislocations on contact potential in epitaxial ZnO thin films studied by electricostatic force microscopy F. S.-S Chien¹, Wei-Rein Liu^2,4, C. C. Tsai², Chih-Yuan Li³, Chia-Chen Hsu³, C.S. Chang² and Chia-Huang Hsu^2,4; ¹Department of Physics, Tunghai University, Taichung, Taiwan; ²Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu, Taiwan; ³Department of Physics, National Chung-Cheng University, Chiayi, Taiwan; ⁴National Synchrotron Radiation Research Center, Hsinchu, Taiwan.

DD6.5
Design of p-type Reflectors for GaInN Flip-chip Light-Emitting Diodes. Hyunsoo Kim, Jin Seo Im, Kwang Hyeon Baik, Jaehee Cho, Jeong Wook Lee, Sukho Yoon, JooSung Kim, Hyungkun Kim, Yu-Sik Kim, JaeWook Jeong, Cheolsoo Sone and Yongjo Park; Samsung Advanced Institute of Technology, Yongin, Gyeonggi-do, South Korea.

DD6.6
Effect of Edge Dislocation Defect Reduction in GaN on Silicon Template on Performance of Overgrown Violet Light Emitting Diode. Fatemeh Shahedipour-Sandvik, Muhammad Jamil, James Grandusky, Vibhu Jindal and Neeraj Tripathi; UAlbany-State Univ. of New York, Albany, New York.

DD6.7
Transferred to DD5.8