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2001 - Dielectric Science and New Functionality in Device Physics for Crystalline Oxides on Semiconductors (COS)

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PURPOSE AND DESCRIPTION

Organizers

Rodney McKee
Oak Ridge National Laboratory
(mckeera@ornl.gov)

Kurt Eisenbeiser
Motorola
(kurt.eisenbeiser@motorola.com)

Darrell Schlom
Penn State University
(schlom@pangaea.ems.psu.edu)

Charles Ahn
Yale University
(charles.ahn@yale.edu)

Program

Dielectric Science and New Functionality in Device Physics for Crystalline Oxides on Semiconductors (COS)
September 11-12, 2001; Chattanooga, Tennessee, USA

Crystalline oxides grown commensurately to a semiconductor are emerging as a new physical system for MOS-based device physics. A 2-day MRS Workshop focused discussion on new opportunities and functionality in semiconductor device physics utilizing crystalline oxides on semiconductors (COS).

COS in a MOS capacitor is a physical system based on dielectric epitaxy in a monolithic thin-film with a semiconductor. Examples of the diverse characteristics of crystalline oxides include ferroelectricity, piezoelectricity and ferromagnetism. A primary example for new functionality comes via the coupling of the anisotropy of Curie phenomena in an oxide to the charge state in the underlying semiconductor. Issues of dielectric science and electron and hole scattering at a crystalline oxide interface with a semiconductor underpin the device physics opportunities. The purpose of the workshop was to bring together scientists and engineers who are interested in both the fundamental science opportunities and device functionality in this new physical system.

WORKSHOP SCHEDULE
 

Tuesday Morning, September 11
8:15 am Rodney McKee (Chair) "Introductions and Overview of COS and the Physical System of a Crystalline Oxide in a MOS Capacitor"
Plenary Session - Crystalline Oxides on Semiconductors - Enabling Introduction of New Functionality in Semiconductors Devices
8:30 am John Harding "Crystalline Oxides on Semiconductors; the view from the oxide"
9:30 am Jean-Pierre Locquet "The Nucleation and Control of Dielectric and Magnetic Functionality in Crystalline Oxides"
10:30 - 10:45 am Break
Molecular Beam Epitaxy Concepts and Methodologies Relative to COS
Linda Horton
, Session Chair
10:45 am Fred Walker "Methodologies and Consequences of a Layer-Sequencing Approach to Interface Physics for an Oxide/Semiconductor Structure"
11:30 am Bill Ooms "Challenges and Opportunities for Epitaxial Oxides on Silicon"
12:30 - 1:30 pm Lunch
     
Tuesday Afternoon, September 11
Interface Electrical Structure -- Experiment
Kurt Eisenbeiser
, Session Chair
1:30 pm Scott Chambers "Band Discontinuity Measurement and Control at Epitaxial Oxide/Si Interfaces"
2:15 pm Curt Billman "Electrical Characteristics of Crystalline Alkaline Earth Oxides on Semiconductors"
3:00 - 3:15 pm Break
Piezoelectric Phenomena and Ferroelectric Device Issues
Charles Ahn
, Session Chair
3:15 pm Karin Rabe "Ferroelectricity and Piezoelectricity in Ultrathin Films and Superlattices from First Principles"
4:00 pm T.P. Ma "Why Is A Nonvolatile Ferroelectric Memory Transistor Still Elusive?"
     
Tuesday Evening, September 11
6:00 - 8:30 pm Poster Session and Dinner
  R. Ramesh "Crystalline Oxides on Semiconductors: Enablers of Next Generation Functional Electronics"
     
Wednesday Morning, September 12
Interface Electrical Structure -- Theory
Annabella Selloni
, Session Chair
8:30 am Malcolm Stocks "First Principles Studies of the Atomistic and Electronic Structure of Crystalline Oxides on Silicon"
9:15 am Raymond Tung "Chemical Aspects Of Band-Offset Formation At Interfaces"
10:00-10:15 am   Break
COS Structures and Semiconductors on Insulator Architectures
Darrell Schlom
, Session Chair
10:15 am Jerry Woodall "Growth and Interface Structure of InAs on GaP"
11:00 am Jasprit Singh "Oxide Semiconductor Heterostructures for Novel Devices"
12:00-1:00pm   Lunch
     
Wednesday Afternoon, September 12
Novel Materials and COS
Len Feldman
, Session Chair
1:00 pm Antoine Kahn "Structural and Electronic Aspects of Organic Molecular Film/Crystalline Oxide Interfaces"
1:45 pm Raynien Kwo "Advances in Surface Passivation for Si and III-V Semiconductors with Novel Oxides"
2:30-2:45 pm   Break
Quantum Computing Physics on Semiconductors
R. Ramesh
, Session Chair
2:45 pm Bruce Kane "Silicon-based Quantum Computation"
3:30 pm Jeremy Levy "Quantum Information Processing with Ferroelectrically Coupled Quantum Dots"
4:15 pm Rodney McKee Summary and Close Workshop


LIST OF SPEAKERS 

Plenary Address:

John Harding University College, London jhh@cmmp.phys.ucl.ac.uk
Jean-Pierre Locquet IBM ioc@zurich.ibm.com

Invited Speakers:

Fred Walker University of Tennessee walkerfj@ornl.gov
Bill Ooms Motorola Labs bill.ooms@motorola.com
Scott Chambers Pacific Northwest National Laboratory sa.chambers@pnl.gov
Curt Billman Penn State University billmanca@ornl.gov
Karin Rabe Rutgers University karin@physics.rutgers.edu
T.P. Ma Yale University T.Ma@yale.edu
Malcolm Stocks Oak Ridge National Laboratory stocksgm@ornl.gov
Raymond Tung Bell Labs, Lucent Technologies rtt@lucent.com
Jerry Woodall Yale University jerry.woodall@yale.edu
Jasprit Singh University of Michigan singh@engin.umich.edu
Antoine Kahn Princeton University kahn@ee.princeton.edu
Raynien Kwo Bell Labs, Lucent Technologies raynien@lucent.com
Bruce Kane University of Maryland kane@lps.umd.edu
Jeremy Levy University of Pittsburgh jlevy@pitt.edu



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