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• HTCVD GROWTH OF SEMI-INSULATING 4H-SiC CRYSTALS WITH LOW DEFECT DENSITY. H1.2
  Authors: A. Ellison, B. Magnusson, C. Hemmingsson, W. Magnusson, T. Iakimov, L. Storasta, A. Henry, N. Henelius, and E. Janzén


• The Effect of Surface Finish on the Dislocation Density in Sublimation Grown SiC Layers H1.3
  Authors: E. K. Sanchez, J. Liu, W.M. Vetter, M. Dudley, R. Bertke, W.C. Mitchel, and M. Skowronski


• HEAT AND MASS TRANSFER SIMULATION OF SiC BOULE GROWTH BY SUBLIMATION. H1.4
  Authors: Michel Pons, Cecile Moulin, Jean-Marc Dedulle, Alexandre Pisch, Bernard Pelissier, Elisabeth Blanquet, Michail Anikin, Etienne Pernot, Roland Madar, Claude Bernard, Christian Faure, Thierry Billon, and Guy Feuillet


• NEW CRUCIBLE DESIGN FOR SiC SINGLE CRYSTAL GROWTH BY SUBLIMATION. H1.5
  Authors: Shin-ichi Nishizawa, Hirotaka Yamaguchi, Tomohisa Kato, M.Nasir Khan, Kazuo Arai, Naoki Oyanagi, Yasuo Kitou, and Wook Bahng


• INVERSE-COMPUTATION DESIGN OF A SIC BULK CRYSTAL GROWTH SYSTEM H1.6
  Authors: Alexey V. Kulik, Svetlana E. Demina, Sergey K. Kochuguev, Dmitry Kh. Ofengeim, Sergey Yu. Karpov, Andrey N. Vorob'ev, Maxim V. Bogdanov, Mark S. Ramm, Alexander I. Zhmakin, Anna A. Alonso, Sergey G. Gurevich, Yuri N. Makarov


• Investigation of silicon carbide physical vapor transport growth on the C-terminated face of 6H seeds. H1.8
  Authors: D. Schulz, J. Doerschel, K. Irmscher, H.-J. Rost, D. Siche, and J. Wollweber


• DEFECT EVOLUTION IN 4H-SiC SUBLIMATION EPITAXY LAYERS GROWN ON LPE BUFFERS WITH REDUCED MICROPIPE DENSITY. H2.1
  Authors: R. Yakimova, M. Syväjärvi, H. Jacobsson, A. Kakanakova-Georgieva, T. Tuomi, S. Rendakova, V. Dmitriev, and E. Janzén


• HOLLOW DEFECT ELIMINATION DURING SOLUTION GROWTH OF SiC. H2.2
  Authors: B.M. Epelbaum, D. Hofmann, M. Müller, and A. Winnacker


• Growth and Characterisation of 4H-SiC MESFET structures grown by Hot-Wall CVD H2.3
  Authors: U. Forsberg, A. Henry, Ö. Danielsson, N. Rorsman, J. Eriksson, Q. Wahab, L. Storasta, M.K. Linnarsson, and E. Janzén


• INVESTIGATION OF LO-HI-LO AND DELTA-DOPED SILICON CARBIDE STRUCTURES. H2.4
  Authors: A. Konstantinov, S. Karlsson, C. Adås, C. Harris, and M. Linnarsson


• ELECTRONIC PROPERTIES OF NITROGEN DELTA-DOPED SILICON CARBIDE LAYERS. H2.5
  Authors: Toshiya Yokogawa, Kunimasa Takahashi, Takeshi Uenoyama, Osamu Kusumoto, Masao Uchida, and Makoto Kitabatake


• A NEW SUBLIMATION ETCHING FOR REPRODUCIBLE GROWTH OF EPITAXIAL LAYERS OF SiC ON SiC SUBSTRATES IN A CVD SYSTEM. H2.6
  Authors: Rongjun Wang, Ishwara Bhat, and Paul Chow


• STRUCTURAL CHARACTERIZATION OF SIC EPITAXIAL LAYERS GROWN ON POROUS SIC SUBSTRATES. H2.7
  Authors: S. E. Saddow, G. Melnychuk, M. Mynbaeva, I. Nikitina, W. M. Vetter, L. Jin, M. Dudley, M. Shamsuzzoha, V. Dmitriev, and C. E. C. Wood


• Surface Morphology of 6H-SiC on various a-plane using Si2Cl6+C3H8+H2 H2.10
  Authors: Shigehiro Nishino, Yasuichi Masuda, Satoru Ohshima, and Chacko Jacob


• GROWTH OF THICK 4H-SiC EPILAYERS IN A VERTICAL RADIANT-HEATING REACTOR. H2.12
  Authors: H. Tsuchida, I. Kamata, T. Jikimoto, and K. Izumi


• CHALLENGES AND STATE-OF-THE-ART OF OXIDES ON SiC. H3.1
  Authors: Lori Lipkin, Mrinal Das, and John Palmour


• TRAPS AT THE SiC/SiO$_2$ - INTERFACE. H3.2
  Authors: Gerhard Pensl, Michael Bassler, Florin Ciobanu, Valeri Afanas'ev, Hiroshi Yano, Tsunenobu Kimoto, and Hiroyuki Matsunami


• BONDING, DEFECTS, AND DEFECT DYNAMICS IN THE SiC-SiO$_{2}$ SYSTEM. H3.3
  Authors: S.T. Pantelides, R. Buczko, M. Di Ventra, S. Wang, S.-G. Kim, S.J. Pennycook, G. Duscher, L.C. Feldman, K. Mcdonald, R.K. Chanana, R.A. Weller, J.R. Williams, G.Y. Chung, C.C. Tin, and T. Isaacs-Smith


• EPITAXIAL GROWTH OF SiC ON NON-TYPICAL ORIENTA- TIONS AND MOS INTERFACES. H3.4
  Authors: Hiroyuki Matsunami, Tsunenobu Kimoto, and Hiroshi Yano


• Nitrogen Passivation of the Interface States Near the Conduction Band Edge H3.5
  Authors: J.R. Williams, G.Y. Chung, C. C. Tin, K. McDonald, D. Farmer, R.K. Chanana, R.A. Weller, S.T. Pantelides, O.W. Holland, M.K. Das, L.A. Lipkin, and L.C. Feldman


• PROFILING OF THE SiO$_{2}$ - SiC INTERFACE USING X-RAY PHOTOELECTRON SPECTROSCOPY. H3.7
  Authors: R. N. Ghosh, S. Ezhilvalavan, B. Golding, S.M. Mukhopadhyay, N. Mahadev, P. Joshi, M.K. Das, and J.A. Cooper, Jr.


• SILICON CARBIDE BIPOLAR POWER DEVICES - POTENTIALS AND LIMITS. H4.2
  Authors: Ranbir Singh


• MICROMACHINING TECHNIQUES FOR SiC MEMS. H4.3
  Authors: Mehran Mehregany and Christian A. Zorman


• INFLUENCE OF INTERFACE STATES ON THE OUTPUT CHARACTERISTICS OF 4H-SiC MESFETs ON SI SUBSTRATES H4.4
  Authors: Nabil Sghaier, Abdel K. Souifi, Jean-Marie Bluet, Manuel Berenguer, Gérard Guillot, Olivier Noblanc, and Christian Brylinski


• DESIGN AND PROCESS ISSUES FOR SILICON CARBIDE POWER DIMOSFETS. H4.5
  Authors: Sei-Hyung Ryu, Anant K. Agarwal, Nelson S. Saks, Mrinal K. Das, Lori A. Lipkin, Ranbir Singh, and John W. Palmour


• SHORT-CHANNEL EFFECT SUPPRESSION IN SILICON CARBIDE MESFETS. H4.6
  Authors: A. Konstantinov, A-M. Saroukhan, S. Karlsson, C. Harris, and A. Litwin


• ELECTROLUMINESCENCE FROM 4H-SiC SCHOTTKY DIODES H4.8
  Authors: F. H. C. Carlsson, Q. ul-Wahab, J. P. Bergman, and E. Janzén


• CHARACTERIZATION OF LIGHT EMISSION FROM 4H AND 6H SiC MOSFETs. H4.9
  Authors: P.J. Macfarlane and R.E. Stahlbush


• Point and planar defect formation in SiC during PVT growth H5.1
  Authors: Yuri I. Khlebnikov, Roman V. Drachev, Curtis A. Rhodes, Dmitry I. Cherednichenko, Igor I. Khlebnikov, and Tangali S. Sudarshan


• THE GROWTH AND CHARACTERIZATION OF SILICON CARBIDE SUBSTRATES. H5.2
  Authors: A. Gupta, M. Yoganathan, J. Burton, N. Byrd, A. Dimondi, S. Edwards, A. Giordana, J. Glesener, J. Harding, F. Long, 1 W. Mitchel, A. Saxler, R. Sostak, J. Whitlock, R. N. Thomas, and T. Anderson


• ONE OF MANY SOURCES OF DEFECT GENERATION IN SiC H5.3
  Authors: Igor I. Khlebnikov, Tangali S. Sudarshan, Yuri I. Khlebnikov, and Colin Wood


• DISLOCATION CONTENT OF ETCH PITS IN HEXAGONAL SILICON CARBIDE H5.4
  Authors: Igor I. Khlebnikov, Mohsen B. Lari, Yuri I. Khlebnikov, Robert T. Bondokov, Ramakrishna Ayyagari, Peter Muzykov, Tangali S. Sudarshan, T. Anderson, and J.B. Whitlock


• SUBLIMATION GROWTH of 6H-SiC BOULE on VARIOUS a-PLANE SUBSTRATES H5.5
  Authors: S. Nishino, T. Nishiguchi, Y. Masuda, M. Sasaki, and S. Ohshima


• HEAT AND MASS TRANSFER MODELING FOR A BETTER KNOWLEDGE OF THE LARGE-AREA GROWTH OF HOMOEPITAXIAL SiC BY CVD H5.6
  Authors: Michel Pons, Jerome Mezière, Jean Marc Dedulle, Stephane Wan Tang Kuan, Elisabeth Blanquet, Claude Bernard, Pierre Ferret, Lea Di Cioccio, Thierry Billon, and Roland Madar


• CHARACTERIZATION OF SiC GROWN ON Ge MODIFIED SILICON SUBSTRATES H5.7
  Authors: J. Pezoldt, Th. Stauden, Ch. Förster, and P. Masri


• STRUCTURAL PROPERTIES OF SiC LAYERS GROWN ON Si SUBSTRATES BY ELECTRON CYCLOTRON CVD TECHNIQUE H5.9
  Authors: F. Giorgis, A. Chiodoni, G. Cicero, S. Ferrero, P. Mandracci, C. F. Pirri, G. Barucca, L. Calcagno, G. Foti, P. Musumeci, and R. Reitano


• EPITAXIAL GROWTH OF SiC ON AlN/ SAPPHIRE USING HEXAMETHYLDISILANE BY MOVPE. H5.10
  Authors: Kasif Teker, Ki Hoon Lee, Chacko Jacob, Shigehiro Nishino, and Pirouz Pirouz


• EFFECT OF TMG ADDITION ON THE EPITAXIAL GROWTH OF 3C-SiC ON Si(100) AND Si(111) USING HEXAMETHYLDIS. H5.11
  Authors: Ki Hoon Lee, Kasif Teker, Ming Zhang, Juyong Chung, and Pirouz Pirouz


• OPTIMIZATION OF THE CARBONIZED BUFFER LAYER FOR THE GROWTH OF VERY HIGH QUALITY SINGLE CRYSTAL SiC ON Si H5.12
  Authors: T. Cloitre, N. Moreaud, P. Vicente, M. Sadowski, M. Moret, and R.L. Aulombard


• STRUCTURAL AND ELECTRICAL CHARACTERIZATIONS OF OXYNITRIDE FILMS ON SOLID PHASE EPITAXIALLY GROWN SILICON CARBIDE. H5.14
  Authors: L.K. Bera, W.K. Choi, D. McNeill, S.K. Ray, S. Chatterjee, and C.K. Maiti


• OXIDATION STUDY OF HYDROGENATED AMORPHOUS SILICON CARBIDE FILMS. H5.15
  Authors: W.K. Choi, L.P. Lee and C.C. Leoy


• Quality of Thermally Grown Oxides in 4H-SiC over Nitrogen or Phosphorus Implanted Regions H5.16
  Authors: I. A. Khan, B. Um, M. Matin, M. A. Capano, and J. A. Cooper Jr.


• $\it{AB~INITIO}$ STUDY OF SiC/METAL POLAR INTERFACES: RELATION BETWEEN INTERFACE STRUCTURE AND SCHOTTKY-BARRIER HEIGHT. H5.18
  Authors: Shingo Tanaka and Masanori Kohyama


• Al/Ni And Al/Ti Ohmic Contact To P-type SiC Diffused Layer H5.19
  Authors: Xaiobin Wang, Stanislav Soloviev, Ying Gao, G.Straty, Tangali Sudarshan, John R. Williams, and John Crofton


• LOW TEMPERATURE (300C) FORMATION OF THERMODYNAMICALLY STABLE NiSi$_{2}$ CONTACTS TO SiC H5.22
  Authors: C. Deeb, H. Kahn, X. Milhet, C. Zorman, M. Mehregany, and A.H. Heuer


• OPTICAL ABSORPTION OF DOPED AND UNDOPED BULK SiC H5.23
  Authors: K. Miller, Q. Zhou, J. Chen, M. O. Manasreh, Z. C. Feng, and I. Ferguson


• ORDINARY AND EXTRA-ORDINARY DIELECTRIC FUNCTIONS OF 4H-SiC AND 6H-SiC IN THE 0.7 - 9 eV SPECTRAL RANGE. H5.24
  Authors: O.P.A. Lindquist, K. Järrendahl, H. Arwin, S. Peters, J.-T. Zettler, C. Cobet, N. Esser, D.E. Aspnes, A. Henry, and N.V. Edwards


• CALCULATION OF POSITRON CHARACTERISTICS IN SILICON CARBIDE. H5.25
  Authors: Bernardo Barbiellini, Jan Kuriplach, Wolfgang Anwand, and Gerhard Brauer


• STUDY OF Ga IMPLANTED p-TYPE 6H-SiC FOR OHMIC CONTACT METALLIZATIONS. H5.27
  Authors: M. Prenatt, A.A. Iliadis, R.D. Vispute, M.C. Wood, M. Derenge, B. Geil, K.A. Jones


• STRUCTURAL, CHEMICAL AND ELECTRICAL CHARACTERIZATION OF 6H-SiC IMPLANTED BY MeV IONS AT 300$^\circ$C AND ANNEALED AT 1700$^\circ$C. H5.28
  Authors: R, Nipoti, A. Carnera, and B. Mattei


• DIFFERENCE IN SECONDARY DEFECTS BETWEEN HIGH ENERGY B$^{+}$ AND Al$^{+}$ IMPLANTED 4H-SiC. H5.29
  Authors: Toshiyuki Ohno and Naoto Kobayashi


• PHYSICAL AND ELECTRICAL CHARACTERIZATION OF RESIDUAL IMPLANT DAMAGE IN 4H-SiC DOUBLE IMPLANTED BIPOLAR TECHNOLOGY. H5.30
  Authors: N. G. Wright, C. M. Johnson, A. G. O'Neill, A. Horsfall, S. Ortolland, K. Adachi, G. J. Phelps, A. P. Knights, P.G.Coleman, and C. P. Burrows


• IMPURITY ACTIVATION IN N$^+$ ION-IMPLANTED 6H-SiC WITH PULSED LASER ANNEALING METHOD. H5.31
  Authors: O. Eryu, K. Aoyama, K. Abe, and K. Nakashima


• EFFECT OF C/B SEQUENTIAL IMPLANTATION ON THE B ACCEPTORS IN 4H-SiC. H5.32
  Authors: Yoshitaka Nakano, Rajesh Kumar Malhan, Tetsu Kachi, and Hiroshi Tadano


• FABRICATION OF 3.4KV HIGH VOLTAGE N-TYPE 4H-SiC SCHOTTKY BARRIER DIODES USING THICK EPITAXIAL LAYERS. H5.36
  Authors: Takashi Tsuji, Hiroyuki Fujisawa, Shinji Ogino, Hidekazu Tsuchida, Isaho Kamata, Tamotsu Jikimoto, and Kunikazu Izumi


• Temperature dependences of channel mobility and threshold voltage in 4H- and 6H-SiC MOSFETs H5.37
  Authors: S. Harada, R. Kosugi, J. Senzaki, S. Suzuki, W. J. Cho, K. Fukuda, and K. Arai


• INTERFACE EFFECTS ON THE RAMAN SPECTRA OF Si/3C-SiC SUPERLATTICES H5.38
  Authors: E.F. Bezerra, A.G. Souza Filho, J. Mendes Filho, V. Lemos, V.N. Freire, Y. Ikoma, F. Watanabe, and T. Motooka


• CHEM-MECHANICAL POLISHING AND RAPID THERMAL ANNEALING OF SiC: RAMAN SPECTROSCOPY AND ESCA (XPS) STUDIES. H5.40
  Authors: Bahram Roughani, Uma Ramabadran, Diana Phillips, W.C. Mitchel, and C.L. Neslen


• SURFACE CHARACTERIZATION OF 3C-SiC FILMS GROWN BY CVD ON Si(001) AND (211) SUBSTRATES. H5.43
  Authors: B. A. Grayson, J. T. Wolan, M. Graves, M. Bledsoe, K. Kirchner, and S. E. Saddow


• IRAS ANALYSIS OF THE EARLY STAGE OF THERMAL OXIDATION ON A SiC SURFACE. H5.44
  Authors: Tamotsu Jikimoto, Hidekazu Tsuchida, Isaho Kamata, and Kunikazu Izumi


• Observation of a Non-stoichiometric Layer at the Silicon Dioxide - Silicon Carbide H5.45
  Authors: K.C. Chang, Q. Wahab, and L.M. Porter


• ION IMPLANTATION FOR SILICON CARBIDE ELECTRONIC DEVICES. H6.1
  Authors: Michael A. Capano


• STRUCTURAL DEFECTS IN ION IMPLANTED 4H-SiC EPILAYERS. H6.2
  Authors: P. O. Å. Persson, W. Skorupa, D. Panknin, A. Kuznetsov, A. Hallén, and L. Hultman


• MULTI-AXIAL CHANNELING STUDY OF DISORDER IN GOLD IMPLANTED 6H-SiC. H6.3
  Authors: W. Jiang, W.J. Weber, S. Thevuthasan, and V. Shutthanandan


• DEFECT STRUCTURES IN NEUTRON IRRADIATED 6H-SiC STUDIED BY X-RAY DIFFRACTION LINE PROFILE ANALYSIS. H6.4
  Authors: C. Seitz, A. Magerl, R. Hock, H. Heissenstein, and R. Helbig


• ELECTRON IRRADIATION OF 4H SiC BY TEM: AN OPTICAL STUDY. H6.5
  Authors: S.G. Sridhara, P.O.A. Persson, F.H.C. Carlsson, J.P. Bergman, E. Janzen, G. Evans, and J.W. Steeds


• SELECTIVE DOPING OF 4H-SiC BY ALUMINUM/BORON CO-DIFFUSION H6.9
  Authors: Ying Gao, S. I. Soloviev, X. Wang, C. C. Tin, and T. S. Sudarshan


• Effects of Surface and Interlayer Processing Conditions on Selected Ohmic Contact Metallizations for p-type Silicon Carbide H7.1
  Authors: L.M. Porter, T. Jang, T. Worren, K.C. Chang, N.A. Papanicolaou, and J.W. Erickson


• TITANIUM TUNGSTEN (TiW) FOR OHMIC CONTACTS TO N- AND P-TYPE 4H-SiC H7.2
  Authors: S.-K. Lee, C.-M. Zetterling, and M. Östling


• ENGINEERING THE Al-Ti/p-SiC OHMIC CONTACT FOR IMPROVED PERFORMANCE H7.3
  Authors: J. Y. Lin, S. E. Mohney, M. Smalley, J. Crofton, J. R. Williams, and T. Isaacs-Smith


• INVESTIGATION OF FACTORS LIMITING THE HIGH TEMPERATURE STABILITY OF W/WC/TaC/SiC OHMIC CONTACTS TO N-TYPE 6H-SiC. H7.4
  Authors: T. Jang, B. Odekirk, and L.M. Porter


• Reaction Kinetics of Thermally Stable Contact Metallization on 6H-SiC H7.5
  Authors: Robert S. Okojie, Dorothy Lukco, Yuan L. Chen, David Spry, and Carl Salupo


• A NOVEL DIRECT PULSE LASER DEPOSITED NICKEL SILICIDE OHMIC CONTACT TO n-SiC. H7.6
  Authors: M.W. Cole, P.C. Joshi, C. W. Hubbard, E. Ngo, J.D. Demaree, J.K. Hirvonen, M. C. Wood, and M.H. Ervin


• COMPARISON OF F$_2$ PLASMA CHEMISTRIES FOR DEEP ETCHING OF SiC. H7.7
  Authors: K.P. Lee, P. Leerungnawarat, S.J. Pearton, F. Ren, S.N.G. Chu, and C.-M. Zetterling


• OPTICAL PROPERTIES OF ALUMINIUM AND NITROGEN IN COMPENSATED 4H-SiC EPITAXIAL LAYERS H7.10
  Authors: Mikael Syväjärvi, Rositza Yakimova, Anelia Kakanakova-Georgieva, Anne Henry, Erik Janzén, and Margareta K. Linnarsson


• Deep-level luminescence at 1.0 eV in 6H SiC. H7.11
  Authors: B. Magnusson, A. Ellison, N.T. Son, and E. Janzén