Get Involved...

• printer-friendly

• In Situ Probing and Atomistic Simulation of a-Si:H Plasma Deposition A1.1
  Authors: Eray S. Aydil, Dimitrios Maroudas, Denise C. Marra, W.M.M. Kessels, Sumit Agarwal, Shyam Ramalingam, Saravanapriyan Sriraman, M.C.M. Van de Sanden, and Akihiro Takanovan de Sanden, Akihiro Takano


• Effect of Strained Si-Si Bonds in Amorphous Silicon Incubation Layer on Microcrystalline Silicon Nucleation A1.2
  Authors: Hiroyuki Fujiwara, Michio Kondo, and Akihisa Matsuda


• Quantitative Modeling of Nucleation Kinetics in Experiments For Poly-Si Growth on SiO₂ By Hot-Wire Chemical Vapor Deposition A1.3
  Authors: Maribeth Swiatek, Jason K. Holt, and Harry A. Atwater


• Thermodynamic Model of the Role of Hydrogen Dilution in Plasma Deposition of Microcrystalline Silicon A1.5
  Authors: J. Robertson


• Photovoltaics on Wire A2.1
  Authors: M. Rojahn, M. Rakhlin, and M. B. Schubert


• Identification of Growth Precursors In Hot Wire CVD of Amorphous Silicon Films A3.1
  Authors: H. L. Duan, G. A. Zaharias, and Stacey F. Bent


• Radical Species Distributions in Hot-Wire Chemical Vapor Deposition Probed Via Threshold Ionization Mass Spectrometry and Direct Simulation Monte Carlo Techniques A3.2
  Authors: Jason K. Holt, Maribeth Swiatek, David G. Goodwin, Harry A. Atwater, R.P. Muller, and W.A. Goddard III


• Films and Devices Deposited by HWCVD at Ultra High Deposition Rates A3.3
  Authors: A.H. Mahan, Y. Xu, E. Iwaniczko, D.L. Williamson, W. Beyer, J.D. Perkins, B.M. Vanecek, L.M. Gedvilas, and B.P. Nelson


• Structural Characterization of SiF₄, SiH₄ and H₂ Hot-Wire-Grown Microcrystalline Silicon Thin Films With Large Grains A3.4
  Authors: J. J. Gutierrez, C. E. Inglefield, C. P. An, M. C. DeLong, P. C. Taylor, S. Morrison, and A. Madan


• T-Site Trapped Molecular Hydrogen in Hot Wire a-Si:H A3.5
  Authors: J. Herberg, P. A. Fedders, D. J. Leopold, R. E. Norberg, and R. E. Schropp


• p-type Window Layers for pin Solar Cells Entirely Fabricated by Hot-Wire CVD A3.6
  Authors: Urban Weber, Markus Koob, Chandrachur Mukherjee, D. Chandrashekhar, Rajiv O. Dusane, and Bernd Schroeder


• Material Properties and Growth Process of Microcrystalline Silicon With Growth Rates in Excess of 1 nm/s A4.2
  Authors: E.A.G. Hamers, A.H.M. Smets, C. Smit, J.P.M. Hoefnagels, W.M.M. Kessels, and M.C.M. van de Sanden


• High Rate Growth of Device Grade Silicon Thin Films for Solar Cells A4.3
  Authors: M. Kondo, S. Suzuki, Y. Nasuno, and A. Matsuda


• Evaluation of Microcrystalline Silicon Films Deposited by Ultrafast Thermal Plasma CVD A4.4
  Authors: Yongkee Chae, Hiromasa Ohno, Keisuke Eguchi, and Toyonobu Yoshida


• Properties of Large Grain-Size Poly-Si Films by Catalytic Chemical Sputtering A4.5
  Authors: Atsushi Masuda, Koji Kamesaki, Akira Izumi, and Hideki Matsumura


• Optical Emission Spectroscopy of Germane Plasma Produced in an ECR Reactor A5.2
  Authors: Matt deFreese , Vikram L. Dalal, and Julie Falter


• Some Considerations Relating to Growth Chemistry of Amorphous Si and (Si,Ge) Films and Devices A5.3
  Authors: Vikram L. Dalal


• Phase Diagrams for the Optimization of rf Plasma Enhanced Chemical Vapor Deposition of a-Si:H: Variations in Plasma Power and Substrate Temperature A5.4
  Authors: Andre S. Ferlauto, Randy J. Koval, Christopher R. Wronski, and Robert W. Collins


• VHF Large Area Plasma Processing on Moving Substrates A5.5
  Authors: J. Kuske , U. Stephan, R. Terasa, H. Brechtel, and A. Kottwitz


• Cluster-less Plasma CVD Reactor and Its Application to a-Si:H Film Deposition A5.6
  Authors: Masaharu Shiratani, Kazunori Koga, and Yukio Watanabe


• Ion-Assisted Sputter Deposition of Microcrystalline Silicon Films With Pulsed-DC Plasma Excitation Pulsed-DC Plasma Excitation A5.7
  Authors: P. Reinig, F. Fenske, B. Selle, and W. Fuhs


• The Properties of Low Hydrogen Silicon Thin Films Deposited by Mesh-Type PECVD A5.8
  Authors: Se-Won Ryu, Do-Hyun Kwon, Sung-Gye Park, and Hyoung-June Kim


• Low-Temperature (630°C) Epitaxy of Silicon on Seeded Glass by Ion-Assisted Deposition A5.11
  Authors: Armin G. Aberle, Nils-Peter Harder, and Stefan Oelting


• Formation of Polycrystalline Silicon Films Using Electrical-Current-Induced Joule Heating A6.2
  Authors: Nobuyuki Andoh, Hiroyuki Takahashi, and Toshiyuki Sameshima


• Electrical Properties of Solid Phase Crystallized Silicon Films A6.3
  Authors: Tadashi Watanabe, Hajime Watakabe, and Toshiyuki Sameshima


• Super Poly-Si And Transistor Formed by Nickel-Induced-Lateral-Crystallization A6.4
  Authors: C.F. Cheng, T.C. Leung, and M.C. Poon


• A Novel Back-Reflecting UV-Assisted Metal-Induced Crystallization of Silicon on Glass A6.5
  Authors: Leila Rezaee, Shamsoddin Mohajerzadeh, Ali Khakifirooz, Saber Haji, and Ebrahim Asl Soleimani


• A New Field-Aided Germanium-Induced Lateral Crystallization of Silicon A6.6
  Authors: Kianoush Naeli, Shamsoddin Mohajerzadeh, Ali Khakifirooz, Saber Haji, and Ebrahim A. Soleimani


• Directional Field Aided Lateral Crystallization of Amorphous Silicon Thin Films A6.7
  Authors: Marek A. T. Izmajlowicz, Neil A. Morrison, Andrew J. Flewitt, and William I. Milne


• The Effects of Cu on Field Aided Lateral Crystallization (FALC) of Amorphous Silicon (a-Si) Films A6.8
  Authors: Jae-Bok Lee, Chul-Ho Kim, Se-Youl Kwon, and Duck-Kyun Choi


• CW Argon-ion Laser Crystallization of a-Si:H Thin Films A6.9
  Authors: A. Sunda-Meya, D. Gracin, J. Dutta, B. Vlahovic, and R.J. Nemanich


• Electrical Properties and Defect States of Laser Crystallized Polycrystalline Silicon Films A6.10
  Authors: Tadashi Watanabe, Nobuyuki Andoh, and Toshiyuki Sameshima


• Excimer Laser Recrystallization of Selectively Floating a-Si Active Layer for Large-Grained Poly-Si Film A6.11
  Authors: Cheon-Hong Kim, Juhn-Suk Yoo, In-Hyuk Song, and Min-Koo Han


• The Effect of H₂ Dilution on Thin Film SiN Deposited by Hot Wire CVD Using SiH₄ and NH₃ Gas Mixtures A7.2
  Authors: A.C. Dillon, L. Gedvillas, D.L. Williamson, J. Thiesen, J.D. Perkins, and A.H. Mahan


• The Effect of Moderate Hydrogen Dilution on Stability and Structure of Amorphous Silicon Deposited by Hot-Wire CVD A7.3
  Authors: Urban Weber and Bernd Schroeder


• Large Red Shift of PL Peak Energy in High Growth Rate a-Si:H Prepared by Hot-Wire CVD A7.4
  Authors: Daxing Han, Guozhen Yue, Jennifer Weinberg-Wolf, Jessica M. Owens, Yueqin Xu, and Qi Wang


• High Quality Amorphous Silicon Germanium Alloy Solar Cells Made by Hot-Wire CVD at 10 Å/S A7.5
  Authors: Qi Wang, Eugene Iwaniczko, Jeffrey Yang, Kenneth Lord, and Subhendu Guha


• Properties of Nano-Crystalline n-type Silicon Films Produced by Hot Wire Plasma Assisted Technique A7.6
  Authors: I. Ferreira, F. Braz Fernandes, P. Vilarinho, E. Fortunato, and R. Martins


• Stress Induced Lateral Concentration Profiles in SiGe Layers Grown on Si(001) Non-Planar Substrates A8.3
  Authors: Anat Eshed, Robert Beserman, and Klauss Dettmer


• Electronic and Optical Properties of High Quality Low Bandgap Amorphous (Ge, Si) Alloys A8.4
  Authors: S.R. Sheng, R. Braunstein, and V.L. Dalal


• Hydrogen Concentration Analysis in PECVD And RTCVD Silicon Nitride Thin Films and It's Impact on Device Performance A8.5
  Authors: C. Y. Wang, E. H. Lim, H. Liu, J. L. Sudijono, T. C. Ang, V. Y. Vassiliev, and J. Z. Zheng


• High-Rate Deposition of a-SiN_x:H Films for Photovoltaic Applications A8.6
  Authors: W.M.M. Kessels, F.J.H. van Assche, J. Hong, J.D. Moschner, T. Lauinger, D.C. Schram, and M.C.M. van de Sanden


• Thermal Annealing Study of Variable Band-Gap a-SiN:H Alloy Films A8.7
  Authors: N. Banerji, E. Faro, and J. Serra


• Ge Island Evolution During Growth, In Situ Anneal, and Si Capping in an Industrial CVD Reactor A8.8
  Authors: Roger Loo, Philippe Meunier-Beillard, Didier Dentel, Michael Goryll, Danielle Vanhaeren, Lili Vescan, Hugo Bender, Matty Caymax, and Wilfried Vandervorst


• Microstructure Characterization of Hydrogenated Amorphous Silicon Films by Rare Gas Effusion Studies A9.2
  Authors: Wolfhard Beyer


• Stability and Nanostrucure of Heterogeneous Amorphous Silicon Thin-Film Synthesized Under High Chamber Pressure (500 to 2200 mtorr) Regime of rf PECVD A9.5
  Authors: A. R. Middya, S. Hamma, S. Hazra, S. Ray, and C. Longeaud


• Nanostructured Silicon Films Produced by PECVD A9.6
  Authors: R. Martins, H. Águas, V. Silva, I. Ferreira, A. Cabrita, and E. Fortunato


• Effects of Hydrogen Dilution on a-Si:H and its Solar Cells Studied by Raman and Photoluminescence Spectroscopy A9.7
  Authors: Guozhen Yue, Jessica M. Owens, Jennifer Weinberg-Wolf, Daxing Han, Jeffrey Yang, Kenneth Lord, Boajie Yan, and Subhendu Guha


• Morphology, Phonon Confinement and Properties of a-Si:H Films A9.8
  Authors: Valeri Ligatchev


• Relation Between Erbium Photoluminescence and Dangling-Bond Defects in a-Si:H A10.4
  Authors: Minoru Kumeda, Hiroshi Itoh, Norio Shitakata, Tatsuo Shimizu


• Towards Stabilized 10% Efficiency of Large-Area (> 5000cm²) a-Si/a-SiGe Tandem Solar Cells using High-Rate Deposition A11.1
  Authors: Shingo Okamoto, Akira Terakawa, Eiji Maruyama, Wataru Shinohara, Makoto Tanaka, and Seiichi Kiyama


• Higher Efficiency of n-i-p Solar Cells by Hot-Wire CVD at Moderate Temperatures A11.2
  Authors: Marieke K. van Veen and Ruud E.I. Schropp


• Amorphous Silicon and Silicon Germanium Alloy Solar Cells Deposited by VHF at High Rates A11.3
  Authors: Jeffrey Yang, Baojie Yan, Jozef Smeets, and Subhendu Guha


• Technology Transfer Challenges in the Manufacturing of a-Si Tandem Solar Cells A11.4
  Authors: D. E. Carlson, G. Ganguly, G. Lin, M. Gleaton, M. Bennett, and R. R. Arya


• Photocarrier Capture Properties of Light-Induced Defects in a-Si:H A12.1
  Authors: L.-F. Arsenault, S. Lebib, E. Sacher, and A. Yelon


• New Experiments on the Relationship Between Light-Induced Defects and Photoconductivity Degradation A12.2
  Authors: Stephan Heck and Howard M. Branz


• Contributions of D⁰ and Non-D⁰ Gap States to the Kinetics of Light Induced Degradation of Amorphous Silicon Under 1 sun Illumination A12.3
  Authors: J. Pearce, X. Niu, R. Koval, G. Ganguly, D. Carlson, R.W. Collins, and C.R. Wronski


• Light-Induced Creation of Defects and Lifetime Distribution of Photoluminescence in a-Si:H Based Films A12.4
  Authors: Chisato Ogihara, Hitoshi Takemura, and Kazuo Morigaki


• Light-Induced Annealing of Deep Defects in Low Ge Fraction a-Si,Ge:H Alloys: Further Insights into the Fundamentals of Light-induced Degradation A12.5
  Authors: J. David Cohen, Jennifer Heath, Kimon C. Palinginis, Jeffrey C. Yang, and Subhendu Guha


• Changes in Hydrogenated Amorphous Silicon Upon Extensive Light-Soaking at Elevated Temperature A12.6
  Authors: N. Hata, C. M. Fortmann, and A. Matsuda


• Diffusion and Solubility of Hydrogen in Amorphous and Microcrystalline Si:H Films A13.1
  Authors: Wolfhard Beyer


• Forms of Hydrogen and Hydrogen Diffusion in Realistic Models of a-Si:H A13.2
  Authors: P. A. Fedders


• Hydrogen Equilibration and Metastability in Amorphous Silicon A13.3
  Authors: Howard M. Branz and S.B. Zhang


• Network Rebonding Model for Metastability in Amorphous Silicon A14.1
  Authors: R. Biswas, B.C. Pan, and Y. Ye


• Investigation of Light-Induced Defect Depth Profile in Hydrogenated Amorphous Silicon Films A14.2
  Authors: S.Shimizu, P. Stradins, M. Kondo, and A. Matsuda


• Illumination- and Annealing-Induced Changes in the Infrared and Raman Spectra of a-Si:H A14.3
  Authors: L.-F. Arsenault, S. Lebib, E. Sacher, and A. Yelon


• Is Interstitial Hydrogen Playing a Role in the Staebler-Wronski Effect? A14.4
  Authors: C. Longeaud and D. Roy


• The Staebler-Wronski Effect and 1/f Noise in Amorphous Silicon. A14.5
  Authors: T. J. Belich and J. Kakalios


• Defect Creation by Electron Beam Irradiation in Amorphous Silicon Nitride Films Compared with That by Light Soaking A14.6
  Authors: Tatsuo Shimizu, Yuji Kawashima, and Minoru Kumeda


• Assessment of the Use of Microcrystalline Silicon Materials Grown at Rates Near 15 Å/s as i-layer Material for Single and Multi-Junction Solar Cells A15.1
  Authors: S.J. Jones, R. Crucet, R. Capangpangan, M. Izu, and A. Banerjee


• Structural Properties of Microcrystalline Si Solar Cells A15.2
  Authors: M. Luysberg, C. Scholten, L. Houben, R. Carius, F. Finger, and O. Vetterl


• Improved Interface Between Front TCO and Microcrystalline Silicon p-i-n Solar Cells A15.3
  Authors: E. Vallat-Sauvain, S. Faÿ, S. Dubail, J. Meier, J. Bailat, U. Kroll, and A. Shah


• Tailoring the Structure of Low-Temperature-Deposited Microcrystalline Silicon Films by Biasing the Substrate A15.4
  Authors: Mario Birkholz, Burkhardt Selle, Walther Fuhs, and Don L. Williamson


• Microcrystalline Silicon Thin-Film Solar Cells Prepared at Low Temperature A15.5
  Authors: Y. Nasuno, M. Kondo and A. Matsuda


• Thin Film a-Si/poly-Si Multibandgap Tandem Solar Cells With Both Absorber Layers Deposited by Hot Wire CVD A15.6
  Authors: R.E.I. Schropp, C.H.M. Van Der Werf, M.K. Van Veen, P.A.T.T. Van Veenendaal, R. Jimenez Zambrano, Z. Hartman, J. Löffler, and J.K. Rath


• Microscopic Aspects of Charge Transport in Hydrogenated Microcrystalline Silicon A16.1
  Authors: Antonín Fejfar , Tomás Mates , Christian Koch , Bohuslav Rezek , Vladimír Svrcek , Petr Fojtík , Ha Stuchlíková , Jirí Stuchlík , and Jan Kocka


• Carrier Transport in Ultra-Thin Nano/Polycrystalline Silicon Films and Nanowires A16.2
  Authors: Toshio Kamiya, Yong T. Tan, Yoshikazu Furuta, Hiroshi Mizuta, Zahid A.K. Durrani, and Haroon Ahmed


• Improvement in Electrical Properties of Polycrystalline Silicon Films by the H₂O Vapor Annealing Method A16.3
  Authors: Toshiyuki Sameshima, Katsumi Asada, Yoshiyuki Tsunoda, and Yoshiyasu Kaneko


• Evolution of the Mobility Gap with Thickness in Hydrogen-Diluted Intrinsic Si:H Materials in the Phase Transition Region and Its Effect on p-i-n Solar Cell Characteristics A16.4
  Authors: R.J. Koval, J.M. Pearce, A.S. Ferlauto, R.W. Collins, and C.R. Wronski


• Femtosecond Carrier Dynamics in Nanocrystalline Silicon Films: The Effect of the Degree of Crystallinity A16.5
  Authors: K.E. Myers, Q. Wang, and S.L. Dexheimer


• P-channel Polycrystalline Silicon Thin Film Transistors on Steel Foil Substrates A17.2
  Authors: Ming Wu and Sigurd Wagner


• Towards an All-Hot-Wire TFT: Silicon Nitride and Amorphous Silicon Deposited by Hot-Wire Chemical Vapor Deposition A17.3
  Authors: B. Stannowski, M.K. van Veen, and R.E.I. Schropp


• Jet-Printed Fabrication of a-Si:H Thin-film Transistors and Arrays A17.4
  Authors: W.S. Wong, S. Ready, R. Matusiak, S.D. White, J.-P. Lu, R. Lau, J. Ho, and R.A. Street


• Nanocrystalline Silicon TFTs With 50 nm Thick Deposited Channel Layer, 10 cm² /Vs Electron Mobility and 10⁸ On/Off Current Ratio A17.5
  Authors: Robert B. Min and Sigurd Wagner


• Two-Dimensional Amorphous Silicon Color Sensor Array A18.1
  Authors: F. Lemmi, M. Mulato, J. Ho, R. Lau, J. P. Lu, and R. A. Street


• Design and Modeling of Optical Sensors in Multi-Channel Technology A18.2
  Authors: D. Knipp, H. Stiebig, and P.G. Herzog


• Mechanisms of Cross-Talk in Large Area a-Si:H Continuous Image Sensors A18.4
  Authors: M. Mulato, J. P. Lu, S. E. Ready, K. Van Schuylenbergh, J. Ho, R. Lau, J. B. Boyce, and R. A. Street


• Tailored Laser Scanned Photodiodes (LSP) for Image Recognition A18.5
  Authors: M. Vieira , M. Fernandes, P. Louro, Y. Vygranenko, R. Schwarz, and M. Schubert


• Piezoresistive Sensors on Plastic Substrates Using Doped Microcrystalline Silicon A18.6
  Authors: P. Alpuim, V. Chu, and J. P. Conde


• Model of Hydrogen-Mediated Metastable Changes in a Two-Domain Amorphous Silicon Network A19.1
  Authors: Jonathan Baugh and Daxing Han


• Defect Density Profiling in Light-Soaked And Annealed Hydrogenated Amorphous Silicon Solar Cells A19.2
  Authors: Richard S. Crandall, Jeffrey Yang, and Subhendu Guha


• Laplace-Transform Transient Photocurrent Spectroscopy as a Probe of Metastable Defect Distributions in Hydrogenated Amorphous Silicon A19.3
  Authors: Mariana J. Gueorguieva, Charlie Main, and Steve Reynolds


• Hydrogen Distributions and Model Lineshapes of ESR Signals of Dangling Bonds in a-Si:H A19.4
  Authors: P.A. Fedders


• Fast Light-Induced Change in Ellipsometry Spectra of Hydrogenated Amorphous Silicon Measured Through a Transparent Substrate Upon Bias Light Illumination A19.5
  Authors: N. Hata, C. M. Fortmann, and A. Matsuda


• Illumination Dependence of Microcrystalline PIN Diodes A19.6
  Authors: Torsten Brammer, Franz Birmans, Mathias Krause, Helmut Stiebig, and Heribert Wagner


• Electrical Stability of a-Si:H TFTs Fabricated at 150°C A19.7
  Authors: H. Gleskova AND S. Wagner


• Structural Changes in Amorphous Silicon Annealed at Low Temperatures A19.9
  Authors: Branko Pivac, Pavo Dubcek, Ognjen Milat, and Ivan Zulim


• Surface Derivatization of Amorphous Silicon by Grignard Reagents A20.4
  Authors: Takashi Ehara and Arata Maruyama


• Photoluminescence Study of Self-Limiting Oxidation in Nanocrystalline Silicon Quantum Dots A20.6
  Authors: Kenta Arai, Junichi Omachi, Katsuhiko Nishiguchi, and Shunri Oda


• Vibrational Stretching Modes of the Si-H and Si-D Bonds in Amorphous Silicon Nitride A21.5
  Authors: Shu-Ya Lin


• Sensitization of the Holes Lifetime by the Addition of Dangling Bonds in a-Si:H A22.2
  Authors: L.F. Fonseca, S. Z. Weisz, and I. Balberg


• Orientation-Dependence of Low Temperature Epitaxial Silicon Growth A22.3
  Authors: Thomas A. Wagner, Lars Oberbeck, Melanie Nerding, Horst P. Strunk, and Ralf B. Bergmann


• Ex Situ and In Situ Defect Density Measurements of a-Si:H by Means of the Cavity Ring Down Absorption Technique A22.4
  Authors: A.H.M. Smets, J.H. van Helden, and M.C.M. van de Sanden


• Study of Defects in Hydrogenated Amorphous Silicon by Constant Photocurrent Method and Positron Annihilation A22.5
  Authors: A.Amaral, G. Lavareda, C. Nunes de Carvalho, P. Brogueira, P. M. Gordo, V. S. Subrahmanyam, C. Lopes Gil, M. Duarte Naia, and A. P. de Lima


• Effect of Experimental Noise on Recovery of the Electronic Density of States From Transient Photocurrent Data A22.6
  Authors: Steve Reynolds, Charlie Main, and Mariana J. Gueorguieva


• Properties of Silicon Films Deposited Under Argon Dilution A23.1
  Authors: C. Longeaud, D. Roy, P. Chaudhuri, N. Dutta Gupta, P. Pratim Ray, S. Vignoli, R. Meaudre, M. Meaudre, and L. Saviot


• The Determination of Optoelectronic Properties of Microcrystalline and Amorphous Silicon Films A23.2
  Authors: Marinus Kunst, Susanne von Aichberger, Wilhelm Thom, and Frank Wünsch


• Structural and Optical Features Of Nanocrystalline Silicon Films Prepared By PECVD and rf Magnetron Sputter Techniques A23.3
  Authors: M.-B. Park and N.-H. Cho


• Electronic Transport Study of High Deposition Fate HWCVD a-Si:H by the Microwave Photomixing Technique A23.4
  Authors: S.R. Sheng, R. Braunstein, B.P. Nelson, and Y. Xu


• Study of Electrical Properties of Microcrystalline Silicon Films Using AC Measurements A23.5
  Authors: Ely A. T. Dirani, Alexandre M. Nardes, Adnei M. Andrade, Fernando J. Fonseca, and Reginaldo Muccillo


• Increasing The Dark Conductivity Activation Energy in Undoped Microcrystalline Silicon by Post-Growth Anneals A23.6
  Authors: Jong-Hwan Yoon


• Generation- Recombination Noise in Amorphous Semiconductors A23.7
  Authors: Charlie Main, Steve Reynolds, and Rashad I. Badran


• Charge Carrier Transport in a-Si:H/c-Si Heterojunctions A24.1
  Authors: Susanne von Aichberger, Frank Wünsch, and Marinus Kunst


• Importance of Defect Density near the p-i Interface for a-Si:H Solar Cell Performance A24.4
  Authors: B.A. Korevaar, C. Smit, R.A.C.M.M. van Swaaij, D.C. Schram, and M.C.M. van de Sanden


• Silicon Thin Film Deposition on Nano-Structured ZnO Substrates A24.5
  Authors: R. Könenkamp, V. Chu, J. Conde, and L. Dloczik


• Optical Simulations of the Effects of Transparent Conducting Oxide Interface Layers on Amorphous Silicon Solar Cell Performance A24.6
  Authors: Gelio M. Ferreira, Andre S. Ferlauto, Pablo I. Rovira, Chi Chen, Hien V. Nguyen, Christopher R. Wronski, and Robert W. Collins


• Integrated Optical and Electrical Modeling of a-Si:H Based Solar Cells A25.1
  Authors: Miro Zeman, René A.C.M.M. van Swaaij, Joost J.G. van den Heuvel, and Wim Metselaar


• Annealing Kinetics of Amorphous Silicon Alloy Solar Cells Made at Various Deposition Rates A25.2
  Authors: Baojie Yan, Jeffrey Yang, Kenneth Lord, and Subhendu Guha


• Correlation Between Film and Cell Properties for DC Plasma Deposited Amorphous Silicon A25.3
  Authors: Jennifer Heath, Suman B. Iyer, Yoram Lubianiker, J. David Cohen, and Gautam Ganguly


• Effects of Low-Temperature Annealing on the Initial and Stabilized Performance of Amorphous Silicon Solar Cells A25.4
  Authors: D. Carlson, G. Ganguly, and G. Lin


• Microcrystalline Silicon Solar Cells Prepared by 13.56 MHz PECVD at High Growth Rates: Solar Cell and Material Properties A25.5
  Authors: Tobias Roschek, Bernd Rech, Wolfhard Beyer, Peter Werner, Felix Edelman, Albert Chack, Raoul Weil, and Robert Beserman


• Guiding Principle to Develop Intrinsic Microcrystalline Silicon Absorber Layer for Solar Cell by Hot-Wire CVD A25.6
  Authors: A.R. Middya, U. Weber, C. Mukherjee, and B. Schroeder


• A Novel Poly-Si Solar Cell using Grain Boundary Etching Treatment and Transparent Conducting Oxide A25.7
  Authors: Dong Gun Lim, Wook Jae Lee, and Junsin Yi


• Preparation Temperature Effects in Microcrystalline Silicon Thin Film Solar Cells A25.8
  Authors: O. Vetterl, A. Dasgupta, , A. Lambertz, H. Stiebig, F. Finger, and H. Wagner


• Solar Cell Performance Under Different Illumination Conditions A25.9
  Authors: Christian Gemmer and Markus B. Schubert


• Carrier Transport and Photogeneration in Large Area p-i-n Si/ Si C Heterojunctions A25.10
  Authors: P. Louro, Yu. Vygranenko, R. Schwarz, M. Fernandes, M. Vieira, J. Gloeckner, and M. Schubert


• Controlling the Lateral Photoeffect in a-Si:H Heterojunction Structures: The Influence of the Band Offset Analysed Through A Numerical Simulation A25.11
  Authors: A. Fantoni, M. Fernandes, P. Louro, R. Schwarz, and M. Vieira


• Microcrystalline Germanium Carbide: A New, Almost Direct Gap, Thin Film Material for Photovoltaic Energy Conversion A25.12
  Authors: Vikram L. Dalal and Jason T. Herrold


• High Electron Mobility TFTs of Nanocrystalline Silicon Deposited at 150°C on Plastic Foil A26.1
  Authors: I-Chun Cheng, Sigurd Wagner, Sanghoon Bae, and Stephen J. Fonash


• Density of States in a-Si:H from SCLC and Its Application in Modeling a Vertical TFT A26.2
  Authors: Naser Sedghi and Bill Eccleston


• Photocapacitance of Hydrogenated Amorphous Silicon Phototransistors A26.3
  Authors: D. Caputo, G. de Cesare, F. Lemmi, A. Nascetti, F. Palma, F. Roca, and M. Tucci


• Electromechanical Properties of Amorphous and Microcrystalline Silicon Micromachined Structures A26.4
  Authors: J. Gaspar, M. Boucinha, V. Chu, and J.P. Conde


• Microcrystalline Germanium Photodetectors A26.5
  Authors: M. Krause, H. Stiebig, R. Carius, and H. Wagner


• Hydrogenated Amorphous Silicon/ZnO Shottky Heterojunction for Position Sensitive Detectors A26.6
  Authors: H. Águas, P. Nunes, E. Fortunato, R. Silva, V. Silva, J. Figueiredo, F. Soares, and R. Martins


• Porous Silicon Thin Film Gas Sensor A26.7
  Authors: I. Ferreira, E. Fortunato, and R. Martins


• Hydrogen Diffusion During Amorphous Silicon Growth and Its Consequences for the Transition to Nanocrystalline Growth A27.2
  Authors: Richard S. Crandall and Jack Thiesen


• Control of Medium Range Order in Amorphous Silicon via Ion and Neutral Bombardment A27.3
  Authors: Jennifer E. Gerbi, Paul. M. Voyles, Michael M. J. Treacy, J. Murray Gibson, Wangchun Chen, Brent J. Heuser, and J. R. Abelson


• Proton NMR and Magnetic Susceptibility in a-Si:H A27.4
  Authors: Jonathan Baugh, Daxing Han, Alfred Kleinhammes, and Yue Wu


• Basic Mechanisms of Structural Relaxation and Diffusion in Amorphous Silicon A28.1
  Authors: G. T. Barkema, Normand Mousseau, R.L.C. Vink, and Parthapratim Biswas


• Determination of the Mobile-Hydrogen Charge State in Hydrogenated Amorphous Silicon A28.2
  Authors: Brent P. Nelson, Yueqin Xu, Robert C. Reedy, Richard S. Crandall, A. Harv Mahan, and Howard M. Branz


• Metastable Changes of the Electrical Conductivity in Microcrystalline Silicon A28.3
  Authors: N. H. Nickel and M. Rakel


• Evidence for Long-Range Hydrogen Motion in a-Si:H Under Room-Temperature Illumination Using Raman Scattering of Amorphous Tungsten Oxide Overlayer A28.5
  Authors: Hyeonsik M. Cheong, Se-Hee Lee, Brent Nelson, Angelo Mascarenhas, and Sayten K. Deb