Symposium V
Rare-Earth Doping for Optoelectronic Applications
MRS Proceedings Volume 866 (Out of Print)
Editors: Tom Gregorkiewicz, Yasufumi Fujiwara, Michal Lipson, John M. Zavada
Below are the published proceedings papers from Symposium V from the 2005 MRS Spring Meeting.
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Suggested format for citation of papers in this volume: List all author names: Title of article, in Rare-Earth Doping for Optoelectronic Applications, edited by Tom Gregorkiewicz, Yasufumi Fujiwara, Michal Lipson, John M. Zavada (Mater. Res. Soc. Symp. Proc. 866, Warrendale, PA, 2005), insert paper number.
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Erbium in Semiconductors: Where are we coming from; Where are we going? V1.1
Authors: A.R. Peaker
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Erbium Doped Silicon Single- and Multilayer Structures for LED and Laser Applications V1.4
Authors: Zakhary F. Krasilnik, Boris A. Andreev, Tom Gregorkiewicz, Wolfgang Jantsch, Mark A.J. Klik, Denis I. Kryzhkov, Ludmila V. Krasilnikova, Viktor P. Kuznetsov, Hanka Przybylinska, Dmitry Yu. Remizov, Vladimir G. Shengurov, Viacheslav B. Shmagin, Margarita V. Stepikhova, Victor Yu. Timoshenko, Nguyen Q. Vinh, Artem N. Yablonskiy, Denis M. Zhigunov
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Multistep Resonant Excitation of Erbium Ions in Thin Silicon Oxide Layers V1.5
Authors: Z. Fleischman, Chr. Sandmann, V. Dierolf, M. White, Y. Zhao, J. Michel, M.A. Stolfi, L. Dal-Negro
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High-Rate Deposition of Rare-Earth Doped Silicate Nanoparticles for Porous and Dense Optical Films V2.7
Authors: Craig R. Horne, Pierre de Mascarel, Russell Blume, Jesse Jur, Cecile Cohen-Jonathan, Michael Chapin, Jonathan Posner, Wei Cho Foo, Christian Honeker, Qing Zhu, Shiv Chiruvolu, Ronald Mosso, William McGovern
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GaN:Eu Interrupted Growth Epitaxy (IGE): Thin Film Growth and Electroluminescent Devices V3.1
Authors: Chanaka Munasinghe, Andrew Steckl, Ei Ei Nyein, Uwe Hömmerich, Hongying Peng, Henry Everitt, Zack Fleischman, Volkmar Dierolf, John Zavada
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Luminescence and Lifetime Properties of Europium Doped Gallium Nitride Compatible with CMOS Technology V3.2
Authors: Carl B. Poitras, Michal Lipson, Huaqiang Wu, Michael G. Spencer
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Visible and Infrared Emission from Er-doped III-N Light Emitting Diodes V3.3
Authors: John M. Zavada, Ei Ei Nyein, Uwe Hömmerich, J. Li, J.Y. Lin, H.X. Jiang, P. Chow, Jian-Wei Dong
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Excitation-Wavelength Dependent and Time-Resolved Photoluminescence Studies of Europium Doped GaN Grown by Interrupted Growth Epitaxy (IGE) V3.5
Authors: Ei Ei Nyein, Uwe Hömmerich, Chanaka Munasinghe, Andrew J. Steckl, John M. Zavada
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Combined Excitation Emission Spectroscopy of Europium Ions in GaN and AlGaN Films. V3.6
Authors: V. Dierolf, Z. Fleischman, C. Sandmann, A. Wakahara, T. Fujiwara, C. Munasinghe, A. Steckl
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Nonequilibrium Carrier Dynamics Studied in Er,O-Codoped GaAs by Pump-Probe Reflection Technique V3.7
Authors: Yasufumi Fujiwara, Kazuhiko Nakamura, Shoichi Takemoto, Yoshikazu Terai, Masato Suzuki, Atsushi Koizumi, Yoshikazu Takeda, Masayoshi Tonouchi
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On 2.7 µm Emission From Er-Doped Large Bandgap Hosts V3.8
Authors: H. Vrielinck, I. Izeddin, V.Y. Ivanov, T. Gregorkiewicz, F. Callens, D.S. Lee, A. J. Steckl, N.M. Khaidukov
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Energy-Back-Transfer Process in Rare-Earth Doped AlGaN V3.9
Authors: A. Wakahara, T. Fujiwara, H. Okada, A. Yoshida, T. Ohshima, H. Itho
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High Resolution Site-Selective Studies of Erbium-Centers in GaN and GaN:Mg V3.10
Authors: V. Glukhanyuk, H. Przybylinska, A. Kozanecki, W. Jantsch
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Rare Earth Ion Implantation for Silicon Based Light Emission: From Infrared to Ultraviolet V4.1/FF4.1
Authors: W. Skorupa, J.M. Sun, S. Prucnal, L. Rebohle, T. Gebel, A.N. Nazarov, I.N. Osiyuk, T. Dekorsy, M. Helm
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Characterization of Er/O-doped Si-LEDs with low thermal quenching V4.2/FF4.2
Authors: A. Karim, W.-X. Ni, A. Elfving, P.O.Å. Persson, G.V. Hansson
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Study of Optical Gain in Thick GaN Epilayers by Variable Stripe Length Technique V4.4/FF4.4
Authors: G. Tamulaitis, J. Mickevicius, M. Shur, Q. Fareed, R. Gaska
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Synthesis and Unprecedented Electro-Optic Response Properties of Twisted π-System Chromophores V4.5/FF4.5
Authors: Hu Kang, Antonio Facchetti, Hua Jiang, Peiwang Zhu, Tobin J. Marks
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Influence of Rapid Thermal Annealing on Self-Assembled Quantum-Dot Superluminescent Diodes V5.1/FF5.1
Authors: Z.Y. Zhang, Y.Y. Tsui, R. Fedosejevs, Z.G. Wang
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Highly Fluorinated Hybrid Glasses Doped With (Erbium-Ions/CdSe Nanoparticles) Designed for Advanced Laser Amplifiers V5.3/FF5.3
Authors: Kyung M. Choi, John A. Rogers
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Fabrication of Er3+/Pr3+ Co-Doped Soda Lime Glass Thin Films Using RF Magnetron Sputter and Optical Property Characterization V5.5/FF5.5
Authors: Sang-Hoon Shin, Sung-Dae Kim, Jong-Ha Moon, Jin Hyeok Kim
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Tm-Er codoping Al2O3 Thin Films: Activation by Annealing V5.6/FF5.6
Authors: Zhisong Xiao, R. Serna, C.N. Afonso, I. Vickridge
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The Impact of Deposition Parameters on Optical and Compositional Properties of Er Doped SRSO Thin Films Deposited by ECR-PECVD V5.7/FF5.7
Authors: Michael Flynn, Jacek Wojcik, Subhash Gujrathi, Edward Irving, Peter Mascher
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Luminescence of Rare Earth Doped Si/ZrO2 Co-Sputtered Films V5.8/FF5.8
Authors: C. Rozo, L.F. Fonseca, O. Resto, S.Z. Weisz
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Gallium Oxide as a Host for Rare Earth Elements V6.2
Authors: J.F. Muth, P. Gollakota, A. Dhawan, H.L. Porter, Y.N. Saripalli, L.M. Lunardi
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Erbium-doped Amorphous- Si-C-O matrix (a-SiCxOy:Er) - A Novel Silicon-Based Material for Near-Infrared Optoelectronic Applications V6.5
Authors: Spyros Gallis, Mengbing Huang, Vasileios Nikas, Harry Efstathiadis, Eric Eisenbraun, Alain E. Kaloyeros
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Hafnium-related photoluminescence in single crystal silicon V6.6
Authors: R. Sachdeva, A.A. Istratov, Wei Shan, P.N.K. Deenapanray, E.R. Weber
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Lattice Location of Rare Earth Ions in Semiconductors: Interpretation and Limitations of using g Values V6.7
Authors: David Carey
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Nanocrystalline Rare Earth-Doped Gallium Nitride Phosphor Powders V6.9
Authors: G.A. Hirata, J. Tao, P. Chen, K.C. Mishra, J. McKittrick