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• OUM Nonvolatile Semiconductor Memory Technology Overview 0918-H05-01-G06-01
  Authors: Stephen J. Hudgens


• Thermal Analysis and Structural Design of Phase Change Random Access Memory 0918-H05-02-G06-02
  Authors: Rong Zhao, Ler Ming Lim, Luping Shi, Hock Koon Lee, Hongxin Yang, Tow Chong Chong


• Investigation on Ultra-high Density and High Speed Non-volatile Phase Change Random Access Memory (PCRAM) by Material Engineering 0918-H05-05-G06-05
  Authors: E.G. Yeo, L.P Shi, R Zhao, T.C. Chong


• Modeling Considerations for Phase Change Electronic Memory Devices 0918-H05-06-G06-06
  Authors: Guy Wicker


• A Computational Study of Oxygen Contamination in Sb₂Te₃ 0918-H05-11-G06-11
  Authors: John E. Boyd, Arthur Edwards, Andrew C. Pineda


• Localized Light Focusing and Super Resolution Readout via Chalcogenide Thin Film 0918-H06-01-G07-01
  Authors: Junji Tominaga, Paul Fons, Takayuki Shima, Kazuma Kurihara, Takashi Nakano, Alexander Kolobov, Stephane Petit


• Impact of Material Crystallization Characteristics on the Switching Behavior of the Phase Change Memory Cell 0918-H06-02-G07-02
  Authors: Thomas Gille, Ludovic Goux, Judit Lisoni, Kristin De Meyer, Dirk J. Wouters


• Kinetics of optically-induced crystallization and structure of Agx(As0.48S0.26Se0.26)100-x chalcogenide films. 0918-H06-03-G07-03
  Authors: Milos Krbal, Tomas Wagner, Miloslav Frumar, Milan Vlcek, Petr Bezdicka


• Ag-Sb-S Thin Films Prepared by RF Magnetron Sputtering and Their Properties 0918-H07-01-G08-01
  Authors: Jan Gutwirth, Tomas Wagner, Milan Vlcek, Cestmir Drasar, Ludvik Benes, Martin Hrdlicka, Miloslav Frumar, Jiri Schwarz, Helena Ticha


• Dielectric Constants and Endurance of Chalcogenide Phase-Change Non-Volatile Memory 0918-H07-06-G08-06
  Authors: Semyon D. Savransky, Eugenio F. Prokhorov


• Preparation of Ge₂Sb₂Te₅ thin film for Phase Change Random Access Memory by RF Magnetron Sputtering and DC Magnetron Sputtering 0918-H07-10-G08-10
  Authors: Shin Kikuchi, Dong Yong Oh, Isao Kimura, Yutaka Nishioka, Koukou Suu


• Influence of the Ge Dose in Ion-implanted SiO2 Layers on the Related Nanocrystal-memory Properties 0933-G02-05
  Authors: Sébastien Duguay, Jean-Jacques Grob, Abdelilah Slaoui, Philippe Kern


• Core-shell Ge Nanoparticles on Oxide Surfaces for Enhanced Interface Stability 0933-G02-07
  Authors: Scott K. Stanley, John G. Ekerdt


• Charge Trapping Memory Cell of TANOS (Oxide-SiN-Al₂O₃-TaN) Structure Erased by Fowler-Nordheim Tunneling of Holes 0933-G02-09
  Authors: Chang-Hyun Lee, Changseok Kang, Yoocheol Shin, Jaesung Sim, Jongsun Sel, Byeong-In Choe, Jungdal Choi, Kinam Kim


• Excellent Room-Temperature Ferroelectricity in Mn-substituted BiFeO3 Thin Films Formed by Chemical Solution Deposition&[psi] 0933-G03-03
  Authors: Sushil Kumar Singh, Hiroshi Ishiwara


• The Interfacial Layer between Pt/PCMO and the Bi-stable Resistive States 0933-G04-05
  Authors: Wei Pan, David Russell Evans


• Preparation of perovskite conductive LaNiO₃ films by sol-gel techniques 0933-G05-05
  Authors: Pei-Ying Lai, Jen-Sue Chen


• Combinatorial Studies for High Density Si and Ge Nanoparticle Arrays 0933-G05-11
  Authors: Scott K. Stanley, John G. Ekerdt