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Room-temperature growth of ultrasmooth AlN epitaxial thin films on sapphire with NiO buffer layer

Author(s):
Atsushi Sasaki, Jin Liu, Wakana Hara, Shusaku Akiba, Keisuke Saito, Tokuo Yodo, Mamoru Yoshimoto

Room-temperature epitaxy of AlN thin films on sapphire (0001) substrates was achieved by pulsed laser deposition using an epitaxial NiO ultrathin buffer layer (approximately 6 nm thick). Four-circle x-ray diffraction analysis indicates a double heteroepitaxial structure of AlN (0001)/NiO(111)/sapphire (0001) with the epitaxial relationship of AlN [10-10] ? NiO [11-2] ? sapphire [11-20]. The surface morphology of room-temperature grown AlN thin films was found to be atomically smooth and nanostepped, reflecting the surface of the ultrasmooth sapphire substrate with 0.2-nm-high steps.

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Volume: 19
#: 9
Pages: 2725-2729
DOI: 10.1557/JMR.2004.0346