Author(s):
H.S. Wang, Y.F. Hu, E. Wertz
We have studied the anisotropic magnetoresistance (AMR) of strained Pr
0.
67Sr
0.
33MnO
3 thin films by measuring the MR as a function of the angle between the magnetic field direction and the substrate normal (out-of-plane). The results show that the compressive-and tensile-strained ultrathin films (5-15 nm) grown on LaA10 3(001) (LAO) and SrTiO
3 (001) (STO) substrates show unusually large out-of-plane AMR, but with opposite signs. In contrast, the almost strainfree films on the NdGaO3(110) substrates show much smaller AMR over all the temperature and field ranges studied. Thick films on LAO and STO substrates also show much smaller AMR. I.
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