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• THE CHEMISTRY OF GALLIUM NITRIDE GROWTH. G1.1
  Authors: T.F. Kuech, Shulin Gu, Ramchandra Wate, Ling Zhang, Jingxi Sun, J.A. Dumesic, and J.M. Redwing


• Drastic Reduction of Threading Dislocation Density of AlGaN on SiC Wafer by Using Highly-Si-Incorporated AlGaN Superlattice G1.3
  Authors: Hideki Hirayama, Makoto Ainoya, Atsuhiro Kinoshita, Akira Hirata, and Yoshinobu Aoyagi


• GROWTH OF SELF-SEEDED ALUMINUM NITRIDE BY SUBLIMATION-RECONDENSATION AND SUBSTRATE PREPARATION. G1.10
  Authors: J. Carlos Rojo, Glen A. Slack, Kenneth Morgan, Leo J. Schowalter, and Michael Dudley


• NITRIDE-RICH HEXAGONAL GaNP GROWTH USING METALORGANIC CHEMICAL VAPOR DEPOSITION. G2.2
  Authors: Seikoh Yoshida, Yoshiteru Itoh, and Junjiroh Kikawa


• COMPREHENSIVE STUDY OF ANOMALOUS CONDUCTION BAND STRUCTURE OF InGaAsN G2.5
  Authors: C. Skierbiszewski, P. Perlin, P. Wisniewski, A. Presz, T. Suski, J. Geisz, W. Jantsch, and D. Mars


• Indium incorporation and surface segregation during InGaN growth by molecular beam epitaxy G2.6
  Authors: Huajie Chen, R. M. Feenstra, J. E. Northrup, J. Neugebauer, and D. W. Greve


• In SEGREGATION EFFECTES ON OPTICAL AND DOPING PROPERTIES OF InAlGaN FOR UV EMITTING DEVICES. G2.8
  Authors: Hideki Hirayama, Atsuhiro Kinoshita, Takuya Yamanaka, Akira Hirata, and Yoshinobu Aoyagi


• CARBON-HYDROGEN COMPLEXES IN METALORGANIC CHEMICAL VAPOR DEPOSITION GROWN GaN. G3.1
  Authors: J. Chen, Q. Zhou, Y. Berhane, M. O. Manasreh, C. A. Tran, M. Pophristic, and I. T. Ferguson


• A NEW MECHANISM IN THE GROWTH PROCESS OF GaN BY HVPE. G3.2
  Authors: A. Trassoudaine, E. Aujol, R. Cadoret, T. Paskova, and B. Monemar


• A Comparison of Magnesium and Beryllium Acceptors in GaN Grown by rf-Plasma Assisted Molecular Be. G3.3
  Authors: A.J. Ptak, T.H. Myers, Lijun Wang, N.C. Giles, M. Moldovan, C.R. Da Cunha, L.A. Hornak, C. Tian, R. A. Hockett, S. Mitha, and P. Van Lierde


• OPTICAL STUDY OF GaN DOPED WITH Mn GROWN BY METAL ORGANIC VAPOR PHASE EPITAXY G3.7
  Authors: R. Y. Korotkov, J. M. Gregie, and B. W. Wessels


• OPTIMIZATION OF THE GaN EPILAYER QUALITY USING IN-SITU REFLECTANCE MEASUREMENTS. G3.8
  Authors: Sandra Ruffenach-Clur, Matthieu Moret, Olivier Briot, Nathanaël Moreaud, Joseph Calas, and Roger L. Aulombard


• MICROSTRUCTURE OF GaN GROWN ON (11-20) SAPPHIRE. G3.9
  Authors: P. Ruterana, A. E.Wickenden, M. E. Twigg, D.D. Koleske, R. L. Henry, O. Tottereau


• CHEMICAL ORDERING IN AlGaN LAYERS GROWN BY MOCVD. G3.10
  Authors: P. Ruterana and F. Omnes


• SURFACE MORPHOLOGY AND COMPOSITION CHARACTERIZATION IN THE INITIAL STAGES OF AlN CRYSTAL GROWTH. G3.13
  Authors: B.Liu, Y. Shi, L. Liu, J.H. Edgar, and D.N. Braski


• HIGHLY SELECTIVE PHOTOENHANCED WET ETCHING OF GaN FOR DEFECT INVESTIGATION AND DEVICE FABRICATION. G3.14
  Authors: P. Visconti, M.A. Reshchikov, K.M. Jones, F. Yun, D.F. Wang, R. Cingolani, H. Morkoç, C.W. Litton, and R.J. Molnar


• SIMULATION OF STRESS GENERATION DURING GaN LATERAL EPITAXIAL OVERGROWTH. G3.15
  Authors: Zhaohua Feng, Edward G. Lovell, Roxann L. Engelstad, Thomas F. Kuech, Susan E. Babcock


• EFFECT OF N$_{2}$ PLASMA TREATMENTS ON DRY ETCH DAMAGE IN N- AND P-TYPE GaN. G3.16
  Authors: D.G. Kent, K.P. Lee, A.P. Zhang, B. Luo, M.E. Overberg , C.R. Abernathy, F. Ren, K.D. Mackenzie, S.J. Pearton, and Y. Nakagawa


• INVESTIGATION OF BUFFER LAYERS FOR GaN GROWN BY MBE. G3.17
  Authors: Feng Yun, Michael A. Reshchikov, Paolo Visconti, Keith M. Jones, Dongfeng Wang, Marc Redmond, Jie Cui, Cole W. Litton, and Hadis Morkoç


• Surface Segregation and Composition Fluctuations in ammonia MBE and MOVPE of InGaN G3.18
  Authors: Sergey Yu. Karpov, Roman A. Talalaev, Eugene V. Yakovlev, and Yuri N. Makarov


• SURFACE MODIFICATION OF CUBIC GaN BUFFER LAYER GROWN BY METALORGANIC VAPOR PHASE EPITAXY. G3.20
  Authors: Akira Nagayama, Ryuji Katayama, Jun Wu, Kentaro Onabe, Hidetaka Sawada, Eliko Takuma, Hideki Ichinose, and Yasuhiro Shiraki


• THE EFFECT OF BUFFER LAYERS IN MOCVD GROWTH OF GaN FILM ON 3C-SiC/Si SUBSTRATE. G3.25
  Authors: C. I. Park, J. H. Kang, K. C. Kim, K. Y. Lim, E.-K. Suh, and K. S. Nahm


• ATOMIC FORCE MICROSCOPY STUDY OF GaN GROWN ON Al$_{2}$O$_{3}$(0001) BY LP-MOVPE G3.28
  Authors: K. Xu, D.H. Lim, B.L. Liu, X.L. Du, G.H. Yu, A.W. Jia, and A. Yoshikawa, K. Takahashi


• Vapor Phase Synthesis and Characterization of Gallium Nitride Powders G3.31
  Authors: Kazuhiko Hara, Yoshinori Matsuo, and Yuuki Matsuno


• STEP FLOW SURFACE MORPHOLOGY IN PLASMA ASSISTED MOLECULAR BEAM EPITAXY GROWN GaN. G3.33
  Authors: Kazuhide Kusakabe, Akihiko Kikuchi, and Katsumi Kishino


• GROWTH MODE AND DEFECTS IN ALUMINUM NITRIDE SUBLIMATED ON (0001) 6H-SiC SUBSTRATES. G3.40
  Authors: Lianghong Liu, Bei Liu, Ying Shi, and J. H. Edgar


• NUCLEATION OF GaN ON (0001) SAPPHIRE DURING MOCVD GROWTH: A HIGH RESOLUTION ELECTRON MICROSCOPY STUDY. G3.41
  Authors: F. Degave, P. Ruterana, G. Nouet, J.H. Je, and C.C. Kim


• INTERACTION BETWEEN BASAL STACKING FAULTS AND PRISMATIC INVERSION DOMAIN BOUNDARIES IN GaN G3.44
  Authors: Philomela Komninou, Joseph Kioseoglou, Eirini Sarigiannidou, George P. Dimitrakopulos, Thomas Kehagias, Alexandros Georgakilas, Gerard Nouet, Pierre Ruterana, and Theodoros Karakostas


• GROWTH OF QUATERNARY AlInGaN/GaN HETERO- STRUCTURES BY PLASMA INDUCED MOLECULAR BEAM EPITAXY WITH HIGH In CONCENTRATION. G3.45
  Authors: A. P. Lima, C. R. Miskys, L. Görgens, O. Ambacher, A. Wenzel, B. Rauschenbach, and M. Stutzmann


• A Study on the Growth of Cubic GaN Films Using an AlGaAs Buffer Layer G3.46
  Authors: Ryuhei Kimura, Kiyoshi Takahashi, and H. T. Grahn


• MICROSTRUCTURE OF GaN FILMS GROWN BY RF-PLASMA ASSISTED MOLECULAR BEAM EPITAXY G3.47
  Authors: Philomela Komninou, Thomas Kehagias, Joseph Kioseoglou, Eirini Sarigiannidou, Theodoros Karakostas, Gerard Nouet, Pierre Ruterana, Khalid Amimer, Spyros Mikroulis, and Alexandros Georgakilas


• STRUCTURAL AND ELASTICITY-BASED PROPERTIES OF SiC-BASED INTERFACES: THEIR RELEVANCE TO THE HETEROEPITAXY OF 3-5 NITRIDES. G3.49
  Authors: P. Masri, M. Rouhani Laridjani, Th. Stauden, J. Pezoldt, and M. Averous


• STRAIN AND COMPOSITION ANALYSIS OF In$_{x}$Ga$_{1-x}$N/GaN LAYERS. G3.52
  Authors: Sérgio Pereira, Maria. R. Correia, Estela Pereira, C. Trager-Cowan, F. Sweeney, P.R. Edwards, K.P. O'Donnell, E. Alves, A.D. Sequeira, N. Franco


• NOVEL CUBIC ZnxMg1-xO EPITAXIAL HETEROSTRUCTURES ON Si (100) SUBSTRATES G3.53
  Authors: A. Kvit, J. Narayan, A.K. Sharma, C. Jin, J.F. Muth, C.W. Teng, and O.W. Holland


• GROWTH OF BULK GaN CRYSTALS VIA VAPOR PHASE TRANSPORT. G3.54
  Authors: H. Shin, D.B. Thomson, P.Q. Miraglia, S.D. Wolter, R. Schlesser, Z. Sitar, and R.F. Davis


• OBSERVATION OF DISLOCATION ETCH PITS IN EPITAXIAL LATERAL OVERGROWTH GaN. G3.56
  Authors: T. C Wen, S.C. Lee, H. S. Chuang, C. H. Chiou, and W. I. Lee


• DIRECT OBSERVATION OF BULK AND INTERFACE STATES IN GaN ON SAPPHIRE GROWN BY HYDRIDE VAPOR PHASE EPITAXY. G3.59
  Authors: S.H. Goss, A.P. Young, L.J. Brillson, D.C. Loo, and R.J. Molnar


• Stability, diffusion, and complex formation of beryllium in wurtzite GaN G4.3
  Authors: Sukit Limpijumnong, Chris G. Van de Walle, and Jörg Neugebauer


• LOW RESISTANCE OPTICALLY TRANSPARENT CONTACTS TO P-TYPE GaN USING OXIDIZED Ni/Au AND ITO FOR LED APPLICATION. G4.8
  Authors: C. H. Lin, D. L. Hibbard, A. Au, H. P. Lee, Z. J. Dong, F. J. Szalkowski, J. Chen, and C. Chen


• Approaches For Reduction Of The Defect Density In Group III Nitride Based Heterostructures G5.1
  Authors: T. S. Zheleva, F. Karoui, K. Kirchner, M. Derenge, K. A. Jones, R. D. Vispute, and T. Venkatesan


• CAN LATERALLY OVERGROWN GaN LAYERS BE FREE OF STRUCTURAL DEFECTS? G5.2
  Authors: D. Cherns and Z. Liliental-Weber


• Fabrication of GaN layer with Low Dislocation Density using Facet controlled ELO technique G5.3
  Authors: H. Miyake, H. Mizutani, K. Hiramatsu, Y. Iyechika, Y. Honda, and T. Maeda


• CHARACTERISTICS OF FIELO-GaN GROWN BY HYDRIDE VAPOR PAHSE EPITAXY G5.6
  Authors: Akira Usui, Haruo Sunakawa, Kenji Kobayashi, Heiji Watanabe, and Masashi Mizuta


• HETEROEPITAXY AND CHARACTERIZATION OF LOW-DISLOCATION-DENSITY GaN SINGLE CRYSTAL ON PERIODICALLY GROOVED SUBSTRATES. G5.7
  Authors: T. Detchprohm, M. Yano, R. Nakamura, S. Sano, S. Mochiduki, T. Nakamura, H. Amano, and I. Akasaki


• OPTICAL PROPERTIES OF MBE GROWN CUBIC AlGaN EPILAYERS AND AlGaN/GaN QUANTUM WELL STRUCTURES. G5.9
  Authors: D.J. As, T. Frey, M. Bartels, A. Khartchenko, D. Schikora, K. Lischka, R. Goldhahn, and S. Shokhovets


• EFFECT OF THERMAL ANNEALING ON THE PHOTO- LUMINESCENCE PROPERTIES OF A GaInNAs/GaAs SINGLE QUANTUM WELL. G6.3
  Authors: Laurent Grenouillet, Catherine Bru-Chevallier, Gérard Guillot, Philippe Gilet, Philippe Ballet, Philippe Duvaut, André Chenevas-Paule, and Alain Million


• Comparative study of HVPE- and MOCVD-grown nitride structures for UV lasing application G6.4
  Authors: J. B. Lam, G. H. Gainer, S. Bidnyk, Amal Elgawadi, G. H. Park, J. Krasinski, J. J. Song, D. V. Tsvetkov, and V. A. Dmitriev


• Luminescence properties of amorphous AlN thin film phosphors incorporated with mixtures of Tb, Cu or Cu, Cr G6.5
  Authors: Andrea L. Martin, Meghan L. Caldwell, Martin E. Kordesch, Chance M. Spalding, Paul G. Van Patten, and Hugh H. Richardson


• Visible Emission from Thin-Film Phosphors of Amorphous AlN:Cu, Mn, and Cr G6.6
  Authors: M. L. Caldwell, A. L. Martin, C. M. Spalding, P. G. Van Patten, M. E. Kordesch, and H. H. Richardson


• PHOTOLUMINESCENCE STUDY OF DEFECTS IN GaN GROWN BY MOLECULAR BEAM EPITAXY. G6.7
  Authors: Michael A. Reshchikov, Manhong H. Zhang, Jie Cui, Paolo Visconti, Feng Yun, and Hadis Morkoç


• RAMAN SPECTROSCOPY STUDIES IN InGaN/GaN WURTZITE EPITAXIAL FILMS. G6.10
  Authors: Maria R. Correia, Sérgio Pereira, Teresa Monteiro, Estela Pereira, and Eduardo Alves


• PHOTOLUMINESCENCE AND CATHODOLUMINESCENCE INVESTIGATIONS OF PIEZOELECTRIC QUANTUM WELLS. G6.12
  Authors: E.M. Goldys, M. Godlewski, M.R.Phillips, and A.A. Toropov


• IR-VUV DIELECTRIC FUNCTION OF Al$_{1-x}$In$_{x}$N DETERMINED BY SPECTROSCOPIC ELLIPSOMETRY G6.13
  Authors: A. Kasic, M. Schubert, B. Rheinländer, J. Off, F. Scholz, C. M. Herzinger


• INFLUENCE OF Er DEPTH PROFILES ON LUMINESCENCE PROPERTIES OF Er-DOPED GaN. G6.15
  Authors: Shin-ichiro Uekusa and Tomoaki Hirano


• CROSS-SECTIONAL CATHODELUMINESCENCE STUDY IN Ga-POLAR and N-POLAR GaN EPILAYERS. G6.16
  Authors: X. L. Du, D. H. Lim, K. Xu, B. L. Liu, A. W. Jia, K. Takahashi, and A. Yoshikawa


• Observation of Band Gap Energy Fluctuation of Microcrystalline InGaN:Zn G6.18
  Authors: Hisashi Kanie, Kosei Sugimoto, and Hiroaki Okado


• CATHODOLUMINESCENCE AND MICRO-STRUCTURE OF POLYCRYSTALLINE GaN GROWN ON ZnO/Si. G6.20
  Authors: Tsutomu Araki, Hidetaka Kagatsume, Hiroaki Aono, and Yasushi Nanishi


• OPTICAL CHARACTERIZATION OF AlGaN/GaN MQW'S. G6.21
  Authors: Ricardo A. Rocha, Teresa Monteiro, Estela Pereira, and Eduardo Alves


• CHARACTERIZATION OF THE MECHANISM OF ACTIVATION FOR VISIBLE LUMINESCENCE IN RARE-EARTH DOPED CRYSTALLINE AND AMORPHOUS AlN THIN FILMS. G6.22
  Authors: C. M. Spalding, M. L. Caldwell, A. L. Martin, V. I. Dimitrova, M. E. Kordesch, H. H. Richardson, and P. G. Van Patten


• SHALLOW-IMPURITY-RELATED PHOTOLUMINESCENCE IN HOMOEPITAXIAL GaN. G6.23
  Authors: V.Kirilyuk, M. Zielinski, P.C.M. Christianen, A.R.A. Zauner, J.L.Weyher, P.R. Hageman, and P.K. Larsen


• COMPARISON OF Er$^{3 }$ PHOTOLUMINESCENCE AND PHOTOLUMINESCENCE EXCITATION SPECTROSCOPY IN IN-SITU DOPED GaN:Er AND Er-IMPLANTED GaN. G6.26
  Authors: Andrea M. Mitofsky, George C. Papen, Stephen G. Bishop, Dong-Seon Lee, and Andrew J. Steckl


• DEGRADATION OF LUMINESCENCE FROM GaN DURING ELECTRON BOMBARDMENT: EFFECTS OF LOCAL CHARGING ON CHEMISTRY AND STRUCTURE. G6.27
  Authors: E. M. Campo, G. S. Cargill III, J. Ramer, M. Schurman, and I. T. Ferguson


• OPTICAL AND ELECTRICAL STUDIES OF In$_{x}$Al$_{1-x}$N ALLOY FILMS GROWN ON (0001) SAPPHIRE. G6.29
  Authors: Y. V. Danylyuk, M. J. Lukitsch, C. Huang, G. W. Auner, R. Naik, and V. M. Naik


• DEVELOPMENT OF AN AlN DEEP UV DETECTOR FOR SPACE APPLICATION G6.33
  Authors: Feng Zhong, Changhe Huang, Yuri V. Danylyuk, and Gregory W. Auner


• Optical Constants, Critical Points, and Phonon Modes of GaAsN Single Layers G6.35
  Authors: G. Leibiger, V. Gottschalch, A. Kasik, B. Rheinländer, J. Sik, and M. Schubert


• OPTICAL PROPERTIES OF A QUANTUM WELL OF A$_{1-x}$B$_x$ ALLOY SEMICONDUCTOR IN THE COHERENT POTENTIAL APPROXIMATION. G6.36
  Authors: Yuzo Shinozuka, Hirotsugu Kida, and Masanori Watarikawa


• RAMAN ANALYSIS OF BULK ALUMINUM NITRIDE: TEMPERATURE DEPENDENCE OF THE PHONON FREQUENCIES. G6.38
  Authors: Jonathan M. Hayes, Martin Kuball, Ying Shi, and James H. Edgar


• OPTICAL STUDIES OF P-TYPE GaN:Mg CO-DOPED WITH OXYGEN. G6.39
  Authors: R. Y. Korotkov, J. M. Gregie, and B. W. Wessels


• X-RAY RECIPROCAL SPACE MAPPING STUDIES OF STRAINED GaN/AlGaN QUANTUM WELLS. G6.40
  Authors: Olivier Briot, Sandra Ruffenach-Clur, Matthieu Moret, and Roger Louis Aulombard


• GROUP III-NITRIDE BASED VCSEL FOR APPLICATIONS AT THE WAVELENGTH OF 400NM. G6.42
  Authors: M. Linnik and A. Christou


• RELATIONSHIP BETWEEN MICROSCOPIC STRUCTURE AND OPTICAL PROPERTY OF POLYCRYSTALLINE GaN ON SILICA GLASS. G6.43
  Authors: Hidetaka Kagatsume, Hiroaki Aono, Tsutomu Araki, and Yasushi Nanishi


• A Generalized Roosbroeck-Schockley Relation for III-Nitrides in Far-From-Equilibrium Conditions G6.44
  Authors: A. R. Vasconcellos, R. Luzzi, C. G. Rodríguez, V. N. Freire, and A. P. da Costa


• THE INFLUENCE OF DEFECTS AND PIEZOELECTRIC FIELDS ON QUANTUM WELL LUMINESCENCE IN InGaN/GaN STRUCTURES. G6.45
  Authors: S. J. Henley and D. Cherns


• PHASE SEPARATION IN MULTIPLE ZnO /CUBIC- MgxZn1-xO SUPERLATTICE HETEROSTRUCTURES OBSERVED VIA HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY G6.50
  Authors: A. Kvit, G. Dusher, A. K. Sharma, C. Jin, J. Narayan, J. Muth, and C.W Teng


• PREPARATION OF 30$\times$30 mm$^{2}$ FREE-STANDING GaN WAFER BY MECHANICAL LIFTOFF AND OPTICAL PROPERTIES IN THE BACKSIDE OF THE FREE GaN BY CATHODOLU G6.51
  Authors: Hwa-Mok Kim, Jae-Eung Oh, and Tae-Won Kang


• GROWTH AND CHARACTERIZATION OF EPITAXIAL In$_{x}$Al$_{1-x}$N ALLOY FILMS ON (0001) SAPPHIRE. G6.54
  Authors: M. J. Lukitsch, G. W. Auner, R. Naik, and V. M. Naik


• MBE GROWTH OF GaN USING AMMONIA OR PLASMA- ACTIVATED MOLECULAR NITROGEN. G6.56
  Authors: A.V. Sampath, A. Bhattacharyya, I. Sandeep, H.M. Ng, E. Iliopoulos, and T.D. Moustakas


• In situ Pyrometric Interferometry For Molecular Beam Epitaxy of AlxGa1-xN on Si (111) G6.57
  Authors: S. A. Nikishin, S. Francoeur, and H. Temkin


• PLANAR FORCE-CONSTANT METHOD FOR LATTICE DYNAMICS OF CUBIC InN. G6.58
  Authors: H. W. Leite Alves, J. L. A. Alves, L. M. R. Scolfaro, and J. R. Leite


• HIGH DENSITY PLASMA ETCHING DAMAGE EFFECTS ON CONTACTS TO n-GaN. G6.61
  Authors: Rajwinder Singh, C. R. Eddy, Jr., T.D. Moustakas, and H.M. Ng


• HIGH ELECTRON MOBILITY IN FREE-STANDING GaN SUBSTRATES G7.2
  Authors: A. Saxler, D. C. Look, S. Elhamri, J. Sizelove, D. Cull, W. C. Mitchel, M. Callahan, D. Bliss, L. Bouthillette, Sheng-Qi Wang, C. M. Sung, S. S. Park, and K. Y. Lee


• HIGH MAGNETIC FIELD STUDIES OF AlGaN/GaN HETEROSTRUCTURES GROWN ON BULK GaN, SiC, AND SAPPHIRE SUBSTRATES. G7.3
  Authors: W. Knap, E. Borovitskaya, M. S. Shur, R. Gaska G.Karczewski, B.Brandt, D. Maude, E. Frayssinet, P. Lorenzini, N. Grandjean, J. Massies, J. W. Yang, X.Hu, G. Simin, M. Asif Khan, C. Skierbiszewski, P. Prystawko, I. Grzegory, and S. Porowski


• Two-dimensional electron gas scattering mechanisms in AlGaN/GaN heterostructures G7.5
  Authors: E. Borovitskaya, W. Knap, M.S. Shur, R. Gaska, E. Frayssinet, P. Lorenzini, N. Grandjen, B. Baumont, J. Massies, C. Skierbiszewski, P. Prystawko, M. Leszczynski, I. Grzegory, S. Porowski


• PERSISTENT PHOTOCONDUCTIVITY IN A HIGH MOBILITY TWO DIMENSIONAL ELECTRON GAS IN AN AlGaN/GaN HETEROSTRUCTURE G7.6
  Authors: S. Elhamri, A. Saxler, D. Cull, W. C. Mitchel, C.R. Elsass, I.P. Smorchkova, B. Heying, C. Poblenz, P. Fini, S. Keller, P.M. Petroff, S.P. DenBaars, U.K. Mishra, and J.S. Speci


• Phonon Lifetimes and Phonon Decay Channels in Single Crystalline Bulk Aluminum Nitride G7.7
  Authors: M. Kuball, J.M. Hayes, Ying Shi, and J.H. Edgar


• SURFACE STRUCTURE AND POLARIZATION EFFECTS IN GaN THIN FILMS AS STUDIED BY ELECTRIC FORCE MICROSCOPY. G7.9
  Authors: K. M. Jones, P. Visconti, F. Yun, M. A. Reshchikov, A. A. Baski, and H. Morkoç


• RENAISSANCE AND PROGRESS IN NITRIDE SEMICON- DUCTORS-MY PERSONAL HISTORY OF NITRIDE RESEARCH. G8.1
  Authors: Isamu Akasaki


• MICROWAVE Al$_{x}$Ga$_{1-x}$N/GaN POWER HEMT'S. G8.2
  Authors: Lester F. Eastman


• Review of Facet Controlled Epitaxial Lateral Overgrowth (FACELO) of GaN via Low Pressure Vapor Phase Epitaxy G8.4
  Authors: Kazumasa Hiramatsu and Hideto Miyake


• GROWTH AND CHARACTERIZATION OF THE GaN UNDERLYING LAYER USED IN BLUE-VIOLET GaN-BASED LASER DIODES ON SAPPHIRE. G9.1
  Authors: Kenji Funato, Tomonori Hino, Shigetaka Tomiya, Takao Miyajima, Takeharu Asano, Tsyuyoshi Tojyo, Shigeki Hashimoto, Katsunori Yanashima, Shiro Uchida, Koshi Tmamura, Toshimasa Kobayashi, and Masao Ikeda


• ROLE OF LOCALIZED QUANTUM WELL EXCITONS IN InGaN QUANTUM WELL STRUCTURE CORRELATED WITH MICROSTRUCTURAL ANALYSIS. G9.3
  Authors: S. F. Chichibu, T. Sota, and S. Nakamura


• UV RAMAN STUDY OF A$_{1}$(LO) AND E$_{2}$ PHONONS IN InGaN ALLOYS GROWN BY METAL-ORGANIC CHEMICAL VAPOR DEPOSITION ON (0001) SAPPHIRE SUBSTRATES G9.7
  Authors: Dimitri Alexson, Leah Bergman, Robert J. Nemanich, Mitra Dutta, Michael A. Stroscio, C.A. Parker, S.M. Bedair, N.A. El-Masry, Fran Adar


• UNIVERSAL BEHAVIOR OF THE PRESSURE COEFFICIENT OF THE LIGHT ABSORPTION AND EMISSION IN InGaN STRUCTURES. G9.8
  Authors: P. Perlin, T. Suski, P. Wisniewski, I Gorczyca, S. Lepkowski, M. Hansen, S.P. DenBaars, B. Damilano, N. Grandjean and J. Massie


• PROPAGATION OF EXCITON-POLARITONS IN NITRIDE- BASED MULTIPLE QUANTUM WELLS. G9.9
  Authors: Guillaume Malpuech, Marian Zamfirescu, Alexey Kavokin, and Aldo Di Carlo


• TIME-RESOLVED PHOTOLUMINESCENCE MEASUREMENTS OF In$_{0.15}$Ga$_{0.85}$N/In$_{0.015}$Ga$_{0.985}$N QUANTUM WELLS WITH Si-DOPED BARRIERS. G9.10
  Authors: Mee-Yi Ryu, Young Jun Yu, Phil Won Yu, Eun-joo Shin, Eunsoon Oh, Chul Soo Sone , Ok Hyun Nam, and Yong Jo Park


• LUMINESCENCE AND STRUCTURAL PROPERTIES OF InGaN EPILAYER, QUANTUM WELL AND QUANTUM DOT SAMPLES USING SYNCHROTRON EXCITATION G9.11
  Authors: K.P. O'Donnell, R.W. Martin, M.E. White, M.J. Tobin, J.F.W. Mosselmans, I.M. Watson, B. Damilano, and N. Grandjean


• RECOMBINATION DYNAMICS IN NITRIDE QUANTUM DOTS FOR COLORS RANGING FROM THE UV TO THE DARK ORANGE. G10.1
  Authors: P. Lefebvre, A. Morel, M. Gallart, T. Taliercio, B. Gil, J. Allègre, H. Mathieu, N. Grandjean, B. Damilano, and J. Massies


• AC OPERATION OF GaN:Er THIN FILM ELECTROLU- MINESCENT DISPLAY DEVICES. G10.4
  Authors: J. Heikenfeld and A. J. Steckl


• PERFORMANCE CHARACTERSTIC OF CW InGaN MULTIPLE QUANTUM WELL LASER DIODES. G10.6
  Authors: Michael Kneissl, William S. Wong, Chris. G. Van de Walle, John E. Northrup, David W. Treat, Mark Teepe, Naoko Miyashita, Peter Kiesel and Noble M. Johnson


• Fabrication and Characterization of InAlGaN Ultraviolet Detectors G10.7
  Authors: Tom N. Oder, Jing Li, Jingyu Lin, and Hongxing Jiang


• AlGaN p-i-n Photodiode Arrays for Solar-Blind Applications G10.9
  Authors: P. Lamarre, A. Hairston, S. Tobin, K. K. Wong, M. F. Taylor, A. K. Sood, M. B. Reine, M. J. Schurman and I. T. Ferguson, R. Singh, and C. R. Eddy, Jr.


• POLARIZATION EFFECTS IN AlGaN/GaN SUPERLATTICES G11.1
  Authors: Erik L. Waldron, E. Fred Schubert, John W. Graff, Andrei Osinsky, Michael J. Murphy, and William F. Schaff


• GROWTH AND INVESTIGATION OF GaN/AlN QUANTUM DOTS. G11.2
  Authors: Hadis Morkoç, Michael A. Reshchikov, Keith M. Jones, Feng Yun, Paolo Visconti, Marshall I. Nathan, and Richard J. Molnar


• IMPACT OF THE GROWTH POLAR DIRECTION ON THE EMISSION MECHANISMS OF GaN FILMS GROWN BY METALORGANIC VAPOR PHASE EPITAXY. G11.6
  Authors: A. Setoguchi, K. Yoshimura, M. Sumiya, A. Uedono, and S. F. Chichibu


• STRUCTURAL EVOLUTION OF Ni/Au CONTACT ON GaN(000L). G11.7
  Authors: Chong Cook Kim, Jong Kyu Kim, Jong-Lam Lee, Min-Su Yi, Jin-Woo Kim, Do Young Noh, Yeukuang Hwu, Pierre Ruterana, and Jung Ho Je


• POLARITY of HEXAGONAL GaN GROWN ON GaAs (111)A AND (111)B SURFACES BY HVPE AND MOVPE G11.8
  Authors: O.Takahashi, M.Namerikawa, H.Tanaka, R.Souda, T.Suemasu, and F.Hasegawa


• AlGaN/InGaN HETEROSTRUCTURE FIELD EFFECT TRANSISTORS GROWN ON SAPPHIRE BY METAL-ORGANIC CHEMICAL VAPOR DEPOSITION. G11.11
  Authors: Chang-Cheng Chuo, Chia-Min Kan, Jen-Inn Chyi, Tzer-En Nee, Chia-Ming Lee, and Chin-Kun Peng


• EMISSION CHARACTERISTICS OF GaN-BASED EL DEVICE WITH AC OPERATION. G11.13
  Authors: Tohru Honda and Hideo Kawanishi


• HIGH-TEMPERATURE ELECTRON TRANSPORT PROPERTIES IN AlGaN/GaN HETEROSTRUCTURE FIELD EFFECT TRANSISTORS. G11.14
  Authors: Narihiko Maeda, Tadashi Saitoh, Kotaro Tsubaki, Toshio Nishida, and Naoki Kobayashi


• ELECTRICAL PROPERTY OF InN GROWN BY RF-MBE. G11.18
  Authors: Yoshiki Saito, Nobuaki Teraguchi, Akira Suzuki, Tomohiro Yamaguchi, Tsutomu Araki, and Yasushi Nanishi


• 500 nm InGaN/GaN SQW INDUCED BY PIEZOELECTRIC FIELD EFFECT AND PHASE SEPARATION. G11.19
  Authors: Bong Kee, J.M. Koh, and Euijoon Yoon


• Profiling electric fields in GaN/InGaN/GaN single quantum wells by electron holography G11.20
  Authors: Juan Cai, M.R. McCartney, and F.A. Ponce


• Investigation of Sidewall Recombination in GaN Using a Quantum Well Probe G11.21
  Authors: E. D. Haberer, M. Woods, A. Stonas, C-H. Chen, S. Keller, M. Hansen, U. Mishra,S. DenBaars, J. Bowers, E. L. Hu


• HIGH-FREQUENCY CAPACITANCE-VOLTAGE CHARAC- TERISTICS OF PECVD GROWN SiO$_{2}$ MIS STRUCTURE ON GaN AND GaN/Al$_{0.4}$Ga$_{0.6}$N/GaN HETEROSTRUCTURE G11.24
  Authors: P.Chen, Y.G. Zhou, H.M. Bu, W.P. Li, Z.Z. Chen, B. Shen, R. Zhang, and Y.D. Zheng


• ELECTRONIC STRUCTURE OF GaN QUANTUM DOTS WITH AN ADJACENT THREADING DISLOCATIONS. G11.25
  Authors: A. D. Andreev, J.R. Downes, and E. P. O'Reilly


• NON-STATIONARY PHOTOCONDUCTIVITY OF GaN NANOCOMPOSITES IN ARTIFICIAL OPAL MATRIX G11.26
  Authors: M. Niehus, S. Koynov, R. Schwarz, N.A. Feoktistov, V.G. Golubev, D.A. Kurdyukov, and A.B. Pevtsov


• LOW-NOISE, LOW-DARK-CURRENT GaN DIODES FOR UV DETECTORS G11.27
  Authors: Peter W. Deelman, Robert N. Bicknell-Tassius, Sergey Nikishin, and Henryk Temkin


• AlN ACOUSTIC WAVE SENSORS USING EXCIMER LASER MICRO- MACHINING TECHNIQUES. G11.28
  Authors: Feng Zhong, Changhe Huang, and Gregory W. Auner


• A HIGH RESISTIVITY GaN FORMED BY ION IMPLANTATION. G11.30
  Authors: Jun Kudo, Yuji Hishida, Masanori Watanabe, Tomoaki Hatayama, and Takashi Fuyuki


• SELF-ALIGNED PROCESS FOR GaN/AlGaN HBTs. G11.32
  Authors: K. P. Lee, A. P. Zhang, G. Dang, F. Ren, J. Han, S.N.G.Chu,W. S. Hobson, J. Lopata, C. R. Abernathy, S. J. Pearton, and J. W. Lee


• HOT ELECTRON TRANSPORT IN AlN. G11.33
  Authors: Ramón Collazo, Raoul Schlesser, Amy Roskowski, Robert F. Davis, and Z. Sitar


• ELECTRIC FIELDS AT THE SiC/AlN AND SiC/GaN POLAR INTERFACES G11.34
  Authors: Morad Rouhani Laridjani, Pierre Masri, and Jacek A. Majewski


• POLARIZATION INDUCED 2D HOLE GAS IN GaN/AlGaN HETEROSTRUCTURES. G11.35
  Authors: S. Hackenbuchner, J. A. Majewski, G. Zandler, O. Ambacher, and P. Vogl


• SYNTHESIS, STRUCTURE, AND LUMINESCENCE OF A2B4C5 NITRIDES. G11.36
  Authors: Vyacheslav Bondar, Lev Axelrud, Vladimir Davydov, and Tom Felter


• GAS SOURCE MOLECULAR BEAM EPITAXY OF HIGH QUALITY Al$_{x}$Ga$_{1-x}$N (0$\le$x$\le$1) ON SILICON AND SAPPHIRE. G11.37
  Authors: S. Nikishin, G. Kipshidze, V. Kuryatkov, A. Zubrilov, K. Choi, Ìu. Gherasoiu, L. Grave de Peralta, T. Prokofyeva, M. Holtz, R. Asomoza, Yu. Kudryavtsev, and H. Temkin


• CHARACTERIZATION OF ION IMPLANTED GaN. G11.39
  Authors: B.J. Skromme, G.L. Martinez, L. Krasnobaev, and D.B. Poker


• CHARACTERIZATION OF GaN ON NANO-POROUS SEMICONDUCTOR SUBSTRATES AND SURFACES. G11.41
  Authors: J. T. Wolan, A. Gopalkrishna, S. E. Saddow, M. Mynbaeu, H. Morkoç, M. Reshchikov, F. Yun, V. Dmitriev, and C.E.C. Wood


• CHARACTERIZATION OF GaN MOS STRUCTURES USING PHOTOANODICALLY GROWN OXIDES WITH RESPECT TO FET DEVICE APPLICATIONS G11.42
  Authors: D. Mistele, T. Rotter, R. Ferretti, F. Fedler, H. Klausing, O.K. Semchinova, J. Stemmer, J. Aderhold, and J. Graul


• A COMPARATIVE STUDY OF THE INFLUENCE OF THE LDA AND GGA APPROXIMATION ON THE CALCULATED PROPERTIES OF THE III-NITRIDES (110) SURFACES G11.46
  Authors: H. W. Leite Alves and J. L. A. Alves, R. A. Nogueira, and J. R. Leite


• SURFACE ELEVATION AND STRAIN IN ION-IMPLANTED GaN G11.53
  Authors: B. Molnar, S. B. Qadri, S. Schiestel, R. M. Stroud, and C. A. Carosella


• Analysis of strain in sub-grains with variable misorientation in GaN epilayers by digital processing of HRTEM images G11.54
  Authors: S. Kret, P. Ruterana, J. Chen, and G. Nouet


• Deep Level Formation in Undoped and Oxygen-Doped GaN G11.56
  Authors: J. M. Gregie, R. Y. Korotkov, and B. W. Wessels


• PLASMA-INDUCED EFFECTS ON THE THERMAL CONDUCTIVITY OF HYDRIDE VAPOR PHASE EPITAXY GROWN N-GaN/SAPPHIRE (0001) G11.57
  Authors: D.I. Florescu, Fred H. Pollak, William B. Lanford, Farid Khan, I. Adesida, and R.J. Molnar


• EFFECT OF EXTERNALLY-IMPOSED RADIAL STRAIN ON THE PIEZOELECTRIC RESPONSE OF MOCVD-GROWN GALLIUM NITRIDE G11.58
  Authors: Jennifer A. Himes, James R. Willis, and Daniel A. Gulino


• TEM ANALYSIS OF THREADING DISLOCATIONS IN ELO-GaN GROWN WITH CONTROLLED FACET PLANES. G11.59
  Authors: Noriyuki Kuwano, Kayo Horibuchi, Hideto Miyake, and Kazumasa Hiramatsu


• Group-III Nitride Heterostructures Emitting in the whole Visible Range G12.1
  Authors: Nicolas Grandjean, Benjamin Damilano, and Jean Massies


• INTEGRATION OF In$_{x}$Ga$_{1-x}$N LASER DIODES WITH DISSIMILAR SUBSTRATES BY LASER LIFT-OFF. G12.2
  Authors: William S. Wong, Michael Kneissl, Ping Mei, David W. Treat, Mark Teepe, and Noble M. Johnson


• HIGH EFFICIENCY UV EMITTER USING HIGH QUALITY GaN/AlxGa1-xN MULTI-QUANTUM WELL ACTIVE LAYER G12.3
  Authors: M. Iwaya, S. Terao, T. Ukai, R. Nakamura, S. Kamiyama, H. Amano, and I. Akasaki


• CURRENT INJECTION UV-EMISSION FROM InAlGaN MULTI-QUANTUM-WELL LIGHT-EMITTING DIODES. G12.6
  Authors: A. Kinoshita, H. Hirayama, M. Ainoya, J. S. Kim, A. Hirata, and Y. Aoyagi


• Defect and stress control of AlGaN and fabricaton of high-efficiency UV-LED G12.7
  Authors: H. Amano, M. Iwaya, S. Nitta, S. Terao, R. Nakamura, T. Ukai, S. Saitoh, S. Kamiyama, C. Wetzel, and I. Akasaki


• IMPROVED OPTICAL QUALITY OF BAlGaN/AlN MQW STRUCTURE GROWN ON 6H-SiC SUBSTRATE BY CONTROLLING RESIDUAL STRAIN USING MULTI-BUFFER LAYER. G12.9
  Authors: Takayoshi Takano, Hideo Kawanishi, Makoto Kurimoto, Yoshiyuki Ishihara, Masato Horie, and Jun Yamamoto


• DEMONSTRATION OF ELECTROABORPTION EFFECT IN InGaN/GaN MQW LAYERS USING AN INTEGRATED LED/MODULATOR/DETECTOR DEVICE STRUCTURE. G13.3
  Authors: S.W. Chung, Y.S. Zhao, C.H. Lin, and H.P. Lee


• THE FABRICATION OF A HIGH POWER GaN METAL SEMICONDUCTOR FIELD-EFFECT TRANSISTOR. G13.4
  Authors: Seikoh Yoshida and Hirotatsu Ishii


• METAL-SEMICONDUCTOR CONTACTS AND CPW MMIC ISSUES FOR AlGaN/GaN FETS. G13.9
  Authors: Bart Jacobs, Mark Kramer, Bram van Straaten, Thieu Kwaspen, Fouad Karouta, Peter de Hek, Raymond van Dijk, and Frank van Vliet


• P-InGaN/N-GaN HETEROJUNCTION DIODES AND THEIR APPLICATION TO HETEROJUNCTION BIPOLAR TRANSISTORS. G13.10
  Authors: Toshiki Makimoto, Kazuhide Kumakura, Toshio Nishida, and Naoki Kobayashi