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Nature Of Charged Metastable Defects In Network Rebonding Model

Author(s):
R. Biswas, B. C. Pan

We recently developed an atomistic model of metastability of a-Si:H, where defect creation is driven by the breaking of weak silicon bonds. The kinetics of degradation in this model is simulated with coupled rate equations that show t1/3 kinetics of defect creation and saturation behavior similar to experiment. Saturated defect densities of neutral dangling bonds are accompanied by a much smaller density of negatively charged floating bonds and positively charged dangling bonds (D+). We propose a two-step annealing mechanism where the positively charged D+ dangling bonds are annealed at low temperature and the D0 at higher temperature – which accounts for hysteresis in mobility lifetime products.

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Track ID:
Paper #: A11.3
DOI: