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• Silicon Carbide Power Devices and Processing C1.3
  Authors: J.B. Casady, J.R. Bonds, W.A. Draper, J.N.Merrett, I. Sankin, D. Seale, and M.S. Mazzola


• Challenges for High Temperature Silicon Carbide Electronics C1.4
  Authors: C.-M. Zetterling, S.-M. Koo, E. Danielsson, W. Liu, S.-K. Lee, M. Domeij, H.-S. Lee, and M. Ostling


• Low Temperature Growth Mechanism of GaN Crystal by Hydride Vapor Phase Epitaxy C2.1
  Authors: Hai-Ping Liu, In-Gann Chen, Jenq-Dar Tsay, Wen-Yueh Liu, Yih-Der Guo and Jung Tsung Hsu


• AlGaN/GaN Structures Grown by HVPE: Growth and Characterization C2.2
  Authors: M.A. Mastro, D.V. Tsvetkov, A.I. Pechnikov, V.A. Soukhoveev, G.H. Gainer, A. Usikov, V. Dmitriev, B. Luo, F. Ren, K.H. Baik, and S.J. Pearton


• HVPE-Grown AlGaN/GaN HEMTs C2.3
  Authors: B. Luo, F. Ren, M.A. Mastro, D. Tsvetkov, A. Pechnikov, V. Soukhoveev, V. Dmitriev, K.H. Baik, and S.J. Pearton


• The Effects of Sapphire Surface Treatments and Nitridation on GaN Nucleation Grown using Hydride Vapor Phase Epitaxy C2.4
  Authors: F. Dwikusuma and T.F. Kuech


• MOCVD Growth of AlN/GaN DBR Structure Under Various Ambient Conditions C2.5
  Authors: H.H. Yao, C.F. Lin, and S.C. Wang


• 4H-SiC DMOSFETs for High Frequency Power Switching Applications C2.7
  Authors: Sei-Hyung Ryu, Anant K. Agarwal, James Richmond, and John W. Palmour


• Laser Direct-Metallization of Silicon Carbide Without Metal Deposition C2.10
  Authors: I.A. Salama , A. Kar, and N.R. Quick


• In Situ SEM Observations and Electrical Measurements During the Annealing of Si/Ni Contacts to SiC C2.11
  Authors: Matthew H. Ervin, Kenneth A. Jones, Michael A. Derenge, Tsvetanka S. Zheleva, and Mark C. Wood


• Influence of Indium Incorporation on Recombination Dynamics in AlInGaN Layers Grown by Pulsed Metal Organic Chemical Vapor Deposition C3.2
  Authors: Jae Ho Song, Jhang W. Lee, P.W. Yu, Mee-Yi Ryu, J. Zhang, E. Kuokstis, J.W. Yang, and M. Asif Khan


• The Investigation of Preferred Orientation Growth of ZnO Films on the Ceramic Substrates C3.6
  Authors: Sheng-Yuan Chu, Te-Yi Chen, Walter Water, and Tung-Yi Huang


• Atomic and Electronic Structure of Boron-Doped Diamond Grain Boundaries Studied by ARHVTEM and Ab Initio Calculation C3.9
  Authors: Hiroyuki Togawa and Hideki Ichinose


• MOCVD Zinc Oxide Films for Wide Bandgap Applications C3.10
  Authors: C.E. Rice, G.S. Tompa, L.G. Provost, N. Sbrockey, and J. Cuchiaro


• Effect of Si Layer in the ZnO Thin Films by Pulsed Laser Deposition C3.12
  Authors: Hong Seong Kang, Jeong Seok Kang, Jae Won Kim, and Sang Yeol Lee


• Fabrication and Characterizations of ZnO and ZnO:Mn Nanocrystalline Thin Films C3.16
  Authors: Yichun Liu, Dongxu Zhao, X.T. Zhang, Dezhen Shen, D.O. Henderson, and R. Mu


• TEM Studies and Contact Resistance of Au/Ni/Ti/Ta/n-GaN Ohmic Contacts C3.17
  Authors: D.N. Zakharov, Z. Liliental-Weber, A. Motayed, and S.N. Mohammad


• Cathodoluminescence, Electroluminescence, and Degradation of ZnCdSe QuantumWell Light Emitting Diodes C3.18
  Authors: A.Yu. Nikiforov, G.S. Cargill III, S.P. Guo, M.C. Tamargo, and Y.-C. Chen


• Effect of Mn Doping in ZnO Thin Films Deposited by Pulsed Laser Deposition C3.20
  Authors: P. Bhattacharya, Rasmi R. Das, J. Nieves, Yu. I. Yuzyuk, and Ram S. Katiyar


• The Refractive Index and Other Properties of Doped ZnO Films C3.21
  Authors: A.L. Cai, J.F. Muth, H.L. Porter, A. Kvit, and J. Narayan


• High-Performance AlGaN-Based Visible-Blind Resonant Cavity Enhanced Schottky Photodiodes C3.22
  Authors: Ibrahim Kimukin, Necmi Biyikli,Tolga Kartaloglu, Orhan Aytür, and Ekmel Ozbay


• Optical and Structural Investigation of AlN Grown on Sapphire With Reactive MBE Using RF Nitrogen or Ammonia C3.23
  Authors: F. Yun, L. He, F. Xiu, H. Morkoç, S. Bai, Y. Shishkin, R.P. Devaty, and W.J. Choyke


• Self-Assembled InP Quantum Dot-TiO₂ Solid Grätzel Solar Cell C3.25
  Authors: Tingying Zeng, Elizabeth Gladwin, and Richard O. Claus


• Statistical Analysis of Micropipe Defect Distributions in Silicon Carbide Crystals C3.29
  Authors: Troy Elkington, Ejiro Emorhokpor, Tom Kerr, John Chen, Kevin Essary, Mike Golab, and Richard H. Hopkins


• Barrier Material Improvement in AlGaN/GaN Microwave Transistors Under Gamma Irradiation Treatment C3.31
  Authors: S.A. Vitusevich, M.V. Petrychuk, N. Klein, S.V. Danylyuk, A.E. Belyaev, R.V. Konakova, A.Yu. Avksentyev, A.M. Kurakin, P.M. Lytvyn, B.A. Danilchenko, V. Tilak, J. Smart, A. Vertiatchikh, and L.F. Eastman


• Characterization of High Quality Continuous GaN Films Grown on Si-Doped Cracked GaN Template C3.34
  Authors: C.B. Soh, J. Zhang, D.Z. Chi, and S.J. Chua


• Structural and Optical Properties of InGaN/GaN Multi-Quantum Well Structures With Different Indium Compositions C3.35
  Authors: Chang-Soo Kim, Sam-Kyu Noh, Kyuhan Lee, Sunwoon Kim, and Jay P. Song


• Electrical Characterization of Defects Introduced in 4H-SiC During High Energy Proton Irradiation and Their Annealing Behavior C3.37
  Authors: M. Ahoujja, H.C. Crocket, M.B. Scott, Y.K. Yeo, and R.L. Hengehold


• Transient Capacitance Characterization of Deep Levels in Undoped and Si-Doped GaN C3.39
  Authors: S. Nakamura, P. Liu, M. Suhara, and T. Okumura


• Modeling of Thermal Conductivity of Polycrystalline GaN Films C3.43
  Authors: D. Kotchetkov and A.A. Balandin


• Influence of Ion Energy on the Reactive Ion Etching Induced Optical Damage of Gallium Nitride C3.46
  Authors: Suk Ing Liem and Roger J. Reeves


• Modeling of Nitride Semiconductor Based Double Heterostructure Tunnel Diodes C3.48
  Authors: M. Moret, S. Ruffenach, O. Briot, and R.L. Aulombard


• High Reflectivity AlGaN/GaN Bragg Mirrors Grown by MOCVD for Microcavities Applications C3.49
  Authors: M. Moret, S. Ruffenach, O. Briot, B. Gil, and R.L. Aulombard


• Er Doped GaN by Gas Source Molecular Beam Epitaxy on GaN Templates C3.50
  Authors: N. Rousseau, O. Briot, V. Ribes, R.L.Aulombard, and RENIBEL network


• ZnO Thin Films Grown at Various Substrate Angles by Pulsed Laser Deposition C3.51
  Authors: Jeong Seok Kang, Hong Seong Kang, Jae Won Kim, and Sang Yeol Lee


• Low Ohmic Contact Resistance of GaN by Employing XeCl Excimer Laser C3.52
  Authors: Seung-Chul Lee, Jin-Cherl Her, Sang-Myun Han, Kwang-Seok Seo, and Min-Koo Han


• Time of Flight of Drifting Electrons and Holes in Stabilized a-Se Film C3.53
  Authors: Dong-Gil Lee, Ji-Koon Park, Jang-Yong Choi, Jae-Hyung Kim, and Sang-Hee Nam


• Experimental Evaluation of a-Se Flat-Panel X-ray Detector for Digital Radiography C3.54
  Authors: Jang-Yong Choi , Ji-Koon Park, Dong-Gil Lee, Sang-Sik Kang, and Sang-Hee Nam


• Optical and Electrical Characterization of Annealed Silicon-implanted GaN C3.55
  Authors: H.T.Wang, L.S. Tan, and E.F. Chor


• Thermal Boundary Resistance and Heat Diffusion in AlGaN/GaN HFETs C3.57
  Authors: Konstantin A. Filippov and Alexander A. Balandin


• Investigation of Thin Film Growth of B₁₂As₂ by Chemical Vapor Deposition C3.58
  Authors: R. Nagarajan, J.H. Edgar, J. Pomeroy, M. Kuball, and T. Aselage


• Novel Oxides for Passivating AlGaN/GaN HEMT and Providing Low Surface State Densities at Oxide/GaN Interface C4.1
  Authors: F. Ren, B. Luo, J. Kim, R. Mehandru, B.P.Gila, A.H. Onstine, C.R. Abernathy, S. J. Pearton, R. Fitch, J. Gillespie, T. Jenkins, J. Sewell, D. Via, A. Crespo, and Y. Irokawa


• Effects of Pre-Process Temperature Stressing on AlGaN/GaN HEMT Structures C4.2
  Authors: Neil A. Moser, Robert C. Fitch, Gregg H. Jessen,, Mark J. Yannuzzi, Neil A. Moser, Robert C. Fitch, Gregg H. Jessen, James K. Gillespie, Glen D. Via, Antonio Crespo, Thomas J. Jenkins, David C. Look, and Donald C. Reynolds


• Solar Blind (Al,Ga)N Metal-Semiconductor-Metal Devices for High Performance Flame Detection C4.4
  Authors: Mauro Mosca, Jean-Luc Reverchon, Nicolas Grandjean, Franck Omnès, Jean-Yves Duboz, Isabelle Ribet, and Michel Tauvy


• GaP-Based MIS Capacitors Using a SiN Gate Dielectric C4.6
  Authors: A. Chen, J. Woodall, X.W. Wang, and T.P. Ma


• Abnormal Rectifying Characteristics of a Mg Doped GaN Schottky Diode C4.7
  Authors: Jae Wook Kim, Byung Kyu Cho, Jhang Woo Lee, and Phil W. Yu


• Analysis of Leakage Currents in AlGaN/GaN Current Aperture Vertical Electron Transistors (CAVETs) C4.8
  Authors: Ilan Ben-Yaacov, Yee-Kwang Seck, Steven P. DenBaars, Evelyn L. Hu, and Umesh K. Mishra


• Electron Injection-Induced Effects in GaN: Physics and Applications C5.4
  Authors: Leonid Chernyak and William Burdett


• Low-Temperature Operation of Green, Blue and UV InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes C5.5
  Authors: X.A. Cao, S.F. LeBoeuf, J.L. Garrett, A. Ebong, L.B. Rowland, and S.D. Arthur


• High-Speed Solar-Blind AlGaN Schottky Photodiodes C5.8
  Authors: Necmi Biyikli, Ibrahim Kimukin, Tolga Kartaloglu, Orhan Aytür, and Ekmel Ozbay


• First AlGaN Free-Standing Wafers C6.5
  Authors: Yu.V. Melnik, V.A. Soukhoveev, K.V. Tsvetkov, and V.A. Dmitriev


• Structural Properties of Free-Standing 50 mm Diameter GaN Wafers With (1010) Orientation Grown on LiAlO₂ C6.6
  Authors: Jacek Jasinski, Zuzanna Liliental-Weber, Herbert-Paul Maruska, Bruce H. Chai, David W. Hill, Mitch M.C. Chou, John J. Gallagher, and Stephen Brown


• Stimulated Emission at 258 nm in AlN/AlGaN QuantumWells Grown on Bulk AlN Substrates C6.9
  Authors: Ibrahim Yilmaz, Remis Gaska, Qhalid Fareed, R. Gaska, Q. Fareed, G. Tamulaitis, I. Yilmaz, M.S. Shur, C. Chen, J. Yang, E. Kuokstis, A. Khan, J.C. Rojo, and L.J. Schowalter


• Surface Acoustic Waves and Guided Optical Waves in AlGaN Films C6.10
  Authors: Gang Bu, Daumantas Ciplys, Michael Shur, Remis Gaska, Qhalid Fareed, Romualdas Rimeika, Jinwei Yang, and Asif Khan


• Large Area 6H- and 4H-SiC Photoconductive Switches C7.2
  Authors: S. Dogan, F. Yun, C.B. Roberts, J. Parish, D. Huang, R.E.Myers, M. Smith, S.E Saddow, B. Ganguly, and H. Morkoç


• Investigation of Epitaxial GaN Films by Conductive Atomic Force Microscopy C7.3
  Authors: A.A. Pomarico, D. Huang, J. Dickinson, S. Dogan, A.A. Baski, R. Cingolani, H. Morkoç, and R. Molnar


• GaN Epitaxial Growth by Molecular Beam Epitaxy Utilizing AlGaN Buffer Layer With Nanopipes C7.4
  Authors: F. Yun, L. He, M.A. Reshchikov, H. Morkoç, J. Jasinski, and Z. Liliental-Weber


• GaN Growth on Si Using ZnO Buffer Layer C7.7
  Authors: K.C. Kim, S.W. Kang, O. Kryliouk, T.J. Anderson, D. Craciun, V. Craciun, and R.K. Singh


• Modulation of Energy Band Gap of ZnO Thin Films Grown by Pulsed Laser Deposition C7.9
  Authors: Sang Yeol Lee, Yuan Li, Jang-Sik Lee, J.K. Lee, M. Nastasi, S.A. Crooker, Q.X. Jia, Hong-Seong Kang, and Jeong-Seok Kang


• Cathodoluminescence Study of Gadolinium-Doped Yttrium Oxide Thin Films Deposited By Radio-Frequency Magnetron Sputtering C7.12
  Authors: J.D. Fowlkes, P.D. Rack, R. Bansal, and J.M. Fitz ­ Gerald J.D. Fowlkes, P.D. Rack, R. Bansal, and J.M. Fitz ­ Gerald J.D. Fowlkes, P.D. Rack, R. Bansal, and J.M. Fitz ­ Gerald