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• High Current Injection to a UV-LED Grown on a Bulk AlN Substrate Y1.3
  Authors: Toshio Nishida, Tomoyuki Ban, Hisao Saito, and Toshiki Makimoto


• GaN Quantum Dot UV Light Emitting Diode Y1.4
  Authors: Jeong-Sik Lee, Satoru Tanaka, Peter Ramvall, and Hiroaki Okagawa


• High Power 330 nm AlInGaN UV LEDs in the High Injection Regime Y1.8
  Authors: M. Gherasimova, J. Su, G. Cui, J. Han, H. Peng, E. Makarona, Y. He, Y.-K.Song, A.V. Nurmikko


• Optical Properties of AlN/AlGa(In)N Short Period Superlattices--Deep UV Light Emitting Diodes Y1.9
  Authors: M. Holtz, I. Ahmad, V.V. Kuryatkov, B.A. Borisov, G.D. Kipshidze, A. Chandolu, S.A. Nikishin, and H. Temkin


• High Performance Solar Blind Detectors based on AlGaN grown by MBE and MOCVD Y1.10
  Authors: Jean-Yves Duboz, Jean-Luc Reverchon, Mauro Mosca, Nicolas Grandjean, and Franck Omnes


• Growth and Fabrication of 2 Inch Free-Standing GaN Substrates via the Boule Growth Method Y2.1
  Authors: Drew Hanser, Lianghong Liu, Edward A. Preble, Darin Thomas, and Mark Williams


• Growth and Characterization of Bulk GaN Crystals at High Pressure and High Temperature Y2.3
  Authors: M.P. D'Evelyn, K.J. Narang, D.-S. Park, H.C. Hong, M. Barber, S.A. Tysoe, J. Leman, J. Balch, V.L. Lou, S.F. LeBoeuf, Y. Gao, J.A. Teetsov, P.J. Codella, P.R. Tavernier, D.R. Clarke, and R.J. Molnar


• Vapor Phase Transport of AlN in an RF Heated Reactor: Low and High Temperature Studies Y2.8
  Authors: V. Noveski, R. Schlesser, J. Freitas Jr, S. Mahajan, S. Beaudoin, and Z. Sitar


• Crucible Selection in AlN Bulk Crystal Growth Y2.9
  Authors: Rafael Dalmau, Balaji Raghothamachar, Michael Dudley, Raoul Schlesser, and Zlatko Sitar


• Growth of GaN Crystals Under Ammonothermal Conditions Y2.10
  Authors: Michael J. Callahan, Buguo Wang, Lionel O. Bouthillette, Sheng-Qi Wang, Joseph W. Kolis, and David F. Bliss


• Curvature and Strain inThick HVPE-GaN for Quasi-Substrate Applications Y2.11
  Authors: Claudia Roder, Tim Böttcher, Tanya Paskova, Bo Monemar, and Detlef Hommel


• HNO₃ Treatment of Sapphire for Management of GaN Polarity in MOCVD Method: Comparison of the Properties of +c and –c GaN Region Y3.3
  Authors: Motoki Takabe, Masatomo Sumiya, and Shunro Fuke


• Either Step-Flow or Layer-by-Layer Growth for AlN on SiC (0001) Substrates Y3.4
  Authors: Jun Suda, Norio Onojima, Tsunenobu Kimoto, and Hiroyuki Matsunami


• Growth and Surface Reconstructions of AlN(0001) Films Y3.5
  Authors: C.D. Lee, Y. Dong, R.M. Feenstra, J.E. Northrup, and J. Neugebauer


• Growth Evolution of Gallium Nitride Films on Stepped and Step-Free SiC Surfaces Y3.7
  Authors: Charles R. Eddy Jr., James C. Culbertson, Nabil D. Bassim, Mark E. Twigg, Ronald T. Holm, Robert E. Stahlbush, Richard L. Henry, Philip G. Neudeck, Andrew J. Trunek, and J.Anthony Powell


• ZnO/AlGaN heterojunction light emitting diodes Y3.9
  Authors: D.M. Bagnall, Ya.I. Alivov, E.V. Kalinina, D.C. Look, B.M. Ataev, M.V. Chukichev, A.E. Cherenkov, and A.K. Omaev


• Electrical and Optical Characteristics of Delta Doped AlGaN Cladding Layer Materials for Highly Efficient 340nm Ultra Violet LEDs Y3.10
  Authors: H.P. Xin, J.S. Flynn, J.A. Dion, E.L. Hutchins, H. Antunes, L. Fieschi-Corso, R.Van Egas, and G.R. Brandes


• Effects of Growth Interruption on the Structural and Optical Properties of GaN Self-Assembled Quantum Dots Y4.1
  Authors: K. Hoshino, S. Kako, and Y. Arakawa


• Electron Field Emission from GaN Nanotip Pyramids Y4.2
  Authors: Hock M. Ng, Jonathan Shaw, Aref Chowdhury, and Nils G. Weimann


• Influence of AlN Overgrowth on GaN Nanostructures Grown by Molecular Beam Epitaxy Y4.4
  Authors: N. Gogneau, E. Monroy, D. Jalabert, E. Sarigiannidou, J. L. Rouvière, and B. Daudin


• Intersubband Absorptions in Doped and Undoped GaN/AlN Quantum Wells at Telecommunication Wavelengths Grown on Sapphire and 6H-SiC Substrates Y4.5
  Authors: A. Helman, M. Tchernycheva, A. Lusson, E. Warde, F.H. Julien, E. Monroy, F. Fossard, Le Si Dang, and B. Daudin


• III-Nitride Photonic Crystals for Blue and UV Emitters Y4.6
  Authors: J. Shakya, K.H. Kim, J. Li, J. Y. Lin, H. X. Jiang, and T.N. Oder


• Structural and Optical Properties of GaN Quantum Dots Y4.7
  Authors: B. Daudin, N. Gogneau, C. Adelmann, , E. Sarigiannidou, T. Andreev, F. Enjalbert, E. Monroy, F. Fossard, J.L. Rouvière, Y. Hori, X. Biquard, D. Jalabert, Le Si Dang, M. Tanaka, and O. Oda


• Optimization of GaN/AlGaN Quantum Wells for Ultraviolet Emitters Y4.8
  Authors: A. Hangleiter, D. Fuhrmann, M. Greve, and U. Rossow


• InN Nanostructures: Strain and Morphology Y4.9
  Authors: Francois Demangeot, Jean Frandon, Claire Pinquier, Michel Caumont, Olivier Briot, Benedicte Maleyre, Sandra Clur-Ruffenach, and Bernard Gil


• Electron Micro-Probe Analysis and Cathodoluminescence Spectroscopy of Rare Earth - Implanted GaN Y5.2
  Authors: S. Dalmasso , R.W. Martin , P.R. Edwards, V. Katchkanov, K.P. O'Donnell, K. Lorenz , E. Alves , U. Wahl, B. Pipeleers, V. Matias , A. Vantomme,, Y. Nakanishi , A. Wakahara, and A. Yoshida


• Structure and Electrical Activity of Rare-Earth Dopants in Selected III-Vs Y5.3
  Authors: J.-S. Filhol, S. Petit, R. Jones, B. Hourahine, Th. Frauenheim, H. Overhof, J. Coutinho, M.J. Shaw, P.R. Briddon, and S. Öberg


• High Temperature Implantation of Tm in GaN Y5.4
  Authors: K. Lorenz, U. Wahl, E. Alves, S. Dalmasso, R.W. Martin, and K.P. O`Donnell


• Processing of Rare Earth Doped GaN With Ion Beams Y5.5
  Authors: K. Lorenz, U. Wahl, E. Alves, T. Wojtowicz, P. Ruterana, S. Dalmasso, R.W. Martin, K.P. O`Donnell, S. Ruffenach, O. Briot, and A. Vantomme


• Structure and Photoluminescence Investigations of Er Doped GaN Layers Grown by MBE Y5.6
  Authors: T. Wojtowicz, H.M. Ng, and P. Ruterana


• Luminescence Properties of Eu Ion-Implanted GaN Y5.7
  Authors: Shin-ichiro Uekusa and Isao Tanaka


• Luminescent Holmium Doped Amorphous AlN Thin Films for Use as Waveguides and Laser Cavities Y5.8
  Authors: Muhammad Maqbool, H.H. Richardson, P.G. Van Patten, and M.E. Kordesch


• Extended X-ray Absorption Fine Structure Studies of GaN Epilayers Doped In Situ With Er and Eu During Molecular Beam Epitaxy Y5.10
  Authors: V. Katchkanov, J.F.W. Mosselmans, S. Dalmasso , K. P. O'Donnell, R.W. Martin, O. Briot, N. Rousseau, and G. Halambalakis


• Hydrogen-Related Local Vibrational Modes in GaN:Mg Grown by Molecular Beam Epitaxy Y5.15
  Authors: D. Pastor, R. Cuscó, L. Artús, F. Naranjo, and E. Calleja


• Non-Equilibrium Acceptor Concentration in GaN:Mg Grown by Metalorganic Chemical Vapor Deposition Y5.16
  Authors: Y. Gong, Y. Gu, Igor L. Kuskovsky, G.F. Neumark, J. Li, J.Y. Lin, H.X. Jiang, and I. Ferguson


• Effect of Impurities on Raman and Photoluminescence Spectra of AlN Bulk Crystals Y5.17
  Authors: A. Sarua, S. Rajasingam, M. Kuball, N. Garro, O. Sancho, A. Cros, A. Cantarero, D. Olguin, B. Liu, D. Zhuang, and J.H. Edgar


• Surface Potential Measurements of Doping and Defects in p-GaN Y5.18
  Authors: M. Losurdo, M.M. Giangregorio, G. Bruno, A.S. Brown, W.A. Doolittle, Gon Namkoong, A.J. Ptak, and T.H. Myers


• Formation and Dissociation of Hydrogen-related Defect Centers in Mg-doped GaN Y5.20
  Authors: O. Gelhausen, M.R. Phillips, E.M. Goldys, T. Paskova, B. Monemar, M. Strassburg, and A. Hoffmann


• Platelet Inversion Domains Induced by Mg-Doping in ELOG AlGaN Films Y5.21
  Authors: R. Liu, F.A. Ponce, D. Cherns, H. Amano, and I. Akasaki


• TEM Investigation of Defect Reduction and Etch Pit Formation in GaN Y5.22
  Authors: Angelika Vennemann, Jens Dennemarck, Roland Kroger, Tim Bottcher, Detlef Hommel and Peter Ryder


• Thermally Stimulated Current Spectroscopy of Carbon-Doped GaN Grown by Molecular Beam Epitaxy Y5.27
  Authors: Z-Q. Fang, D.C. Look, R. Armitage, Q. Yang, and E.R. Weber


• Microstructure of Nonpolar a-Plane GaN Grown on (1120) 4H-SiC Investigated by TEM Y5.28
  Authors: D.N. Zakharov, Z. Liliental-Weber, B. Wagner, Z.J. Reitmeier, E.A. Preble, and R.F. Davis


• Structural Study of V-like Columnar Inversion Domains in AlN Grown on Sapphire Y5.29
  Authors: J. Jasinski, T. Tomaszewicz, Z. Liliental-Weber, Q. S. Paduano, D. W. Weyburne


• The Microstructure of GaN Nucleation Layers Grown by MOCVD on (11 2 0) Sapphire Versus Pressure and Temperature Y5.32
  Authors: T. Wojtowicz, P. Ruterana, M.E. Twigg, R.L. Henry, D.D. Koleske, A.E. Wickenden


• Effects of Si-Doping on the Microstructure of AlGaN/GaN Multiple-Quantum-Well Y5.33
  Authors: R. Liu, F.A. Ponce, S-L. Sahonta, D. Cherns, H. Amano, and I. Akasaki


• Structural Units and Energy of Grain Boundaries in GaN Y5.34
  Authors: Jun Chen, Pierre Ruterana, and Gerard Nouet


• Analysis of InGaN-GaN Quantum Well Chemistry and Interfaces by Transmission Electron Microscopy and X-ray Scattering Y5.36
  Authors: T.M. Smeeton, M.J. Kappers, J.S. Barnard, and C.J. Humphreys


• Deep Defects in Fe-Doped GaN Layers Analysed by Electrical and Photoelectrical Spectroscopic Methods Y5.37
  Authors: H. Witte, K. Fluegge, A. Dadgar, A. Krtschil, A. Krost, and J. Christen


• Identification of Carbon-related Bandgap States in GaN Grown by MOCVD Y5.38
  Authors: A. Armstrong, A.R. Arehart, S.A. Ringel, B. Moran, S.P. DenBaars, U.K. Mishra, and J.S. Speck


• Band Bending Near the Surface in GaN as Detected by a Charge Sensitive Probe Y5.39
  Authors: S. Sabuktagin, M.A. Reshchikov, D.K. Johnstone, and H. Morkoç


• Reciprocal Space Mapping of X-ray Diffraction Intensity of GaN-Based Laser Diodes Grown on GaN Substrates Y5.40
  Authors: K. Tachibana, Y. Harada, S. Saito, S. Nunoue, H. Katsuno, C. Hongo, G. Hatakoshi, and M. Onomura


• Time Resolved Photoluminescence of Si-Doped High Al Mole Fraction AlGaN Epilayers Grown by Plasma-Enhanced Molecular Beam Epitaxy Y5.45
  Authors: Madalina Furis, Alexander N. Cartwright, Jeonghyun Hwang, and William J. Schaff


• Anomalous Composition Dependence of Optical Energies of MBE-Grown InGaN Y5.47
  Authors: I. Fernandez-Torrente, D. Amabile, R.W. Martin, K.P. O'Donnell, J.F.W. Mosselmans, E. Calleja, and F.B. Naranjo


• Anisotropic Dielectric Properties of GaN Epilayers on Sapphire Y5.48
  Authors: N.L. Rowell, G. Yu, and D.J. Lockwood


• Spectroscopy of Intraband Electron Confinement in Self-Assembled GaN/AlN Quantum Dots Y5.51
  Authors: Ana Helman, Khalid Moumanis, Maria Tchernycheva, Alain Lusson, Francois Julien, Benjamin Damilano, Nicolas Grandjean, Jean Massies, Christophe Adelmann, Frederic Fossard, Daniel Le Si Dang, and Bruno Daudin


• Optical and Microstructural Properties of N- and Ga-Polarity GaN Y5.52
  Authors: A. Bell, J.L. Smit, R. Liu, J. Mei, F.A. Ponce, H.M. Ng, A. Chowdhury, and N.G. Weimann


• Photoluminescence From Freestanding GaN With (0110) Orientation Y5.53
  Authors: M.A. Reshchikov, A. Teke, H.P. Maruska, D.W. Hill, and H. Morkoç


• Structural Defect-Related Photoluminescence in GaN Y5.55
  Authors: L. Chen, B.J. Skromme, M.K. Mikhov, H. Yamane, M. Aoki, F.J. DiSalvo, B. Wagner, R.F. Davis, P.A. Grudowski, and R.D. Dupuis


• Optical Evaluation of Pretreated InGaN Quantum Well Structures Y5.59
  Authors: T. Böttcher, F. Bertram, P. Bergman, A. Ueta, J. Christen, and D. Hommel


• Strain Evolution and Phonons in AlN/GaN Superlattices Y5.60
  Authors: V. Darakchieva, P. P. Paskov, M. Schuber, E. Valcheva, T. Paskova, H. Arwin, B. Monemar, H. Amano , and I. Akasaki


• Confocal Photoluminescence and Cathodoluminescence Studies of AlGaN Y5.64
  Authors: V. Dierolf, O. Svitelskiy, G.S. Cargill III, A. Yu. Nikiforov, J. Redwing, and J. Acord


• Manifestation of Structural Defects in Photoluminescence From GaN Y5.66
  Authors: M.A. Reshchikov, J. Jasinski, F. Yun, L. He, Z. Liliental-Weber, and H. Morkoç


• Raman Characterization of Strained GaN_yAs_1-y and In_xGa_1-xN_yAs_1-y Epilayers Y5.67
  Authors: Li-Lin Tay, David J. Lockwood, James A. Gupta, and Zbig R. Wasilewski


• Optical Study of Localized and Delocalized States in GaAsN/GaAs Y5.68
  Authors: Z.Y. Xu, X.D. Luo, X.D. Yang, P.H. Tan, C. L. Yang, W.K. Ge, Y. Zhang, A. Mascarenhas, H.P. Xin, and C.W. Tu


• Strong Dependence of the Fundamental Band Gap on the Alloy Composition in Cubic In_xGa_1-xN and In_xAl_1-xN Alloys Y5.69
  Authors: Z. Dridi, B. Bouhafs, and P. Ruterana


• Reduction of Threading Dislocation Density in AlGaN by Indium Incorporation Y5.71
  Authors: H. Kang, Z.C. Feng, I. Ferguson , S.P. Guo, and M. Pophristic


• Origins of Light Emission and Efficiency Saturation of the Photoluminescence of GaN Nanocrystallites Y5.73
  Authors: Xiang-Bai Chen, John L. Morrison, Margaret K. Penner, Jennifer Elle, and Leah Bergman


• Polarization-Dependent Spectroscopy of the Near-Bandgap Excitonic Emission in Free Standing GaN Y6.1
  Authors: P.P. Paskov, T. Paskova, P.O. Holtz, and B. Monemar


• Advances in the Realisation of GaN-Based Microcavities: Towards Strong Coupling at Room Temperature Y6.5
  Authors: F. Semond, D. Byrne, F. Natali. M. Leroux, J. Massies, N. Antoine-Vincent, A. Vasson, P. Disseix, and J. Leymarie


• Characterization of III-Nitride Based Schottky UV Detectors With Wide Detectable Wavelength Range (360-10 nm) Using Synchrotron Radiation Y6.6
  Authors: Atsushi Motogaito, Kazumasa Hiramatsu, Yasuhiro Shibata, Hironobu Watanabe, Hideto Miyake, Kazutoshi Fukui, Youichiro Ohuchi, Kazuyuki Tadatomo, and Yutaka Hamamura


• Time-Resolved Reflectivity Studies of Electric Field Effects in III-Nitride Semiconductors Y6.10
  Authors: M. Wraback, H. Shen, A.V. Sampath, C.J. Collins, G.A. Garrett, W.L. Sarney, Y. Fedyunin, J. Cabalu, and T.D. Moustakas


• MOCVD AlGaN/GaN HFETs on Si: Challenges and Issues Y7.2
  Authors: Pradeep Rajagopal, John C. Roberts, J.W. Cook Jr., J.D. Brown, Edwin L. Piner, and Kevin J. Linthicum


• High Temperature Operation of A New Normally-Off AlGaN/GaN HFET on Si Substrate Y7.3
  Authors: Seikoh Yoshida, Jiang Li, Takahiro Wada, and Hironari Takehara


• High-Power Characteristics of GaN/InGaN Double Heterojunction Bipolar Transistors With a Regrown p-InGaN Base Layer Y7.4
  Authors: Toshiki Makimoto, Yoshiharu Yamauchi, and Kazuhide Kumakura


• Design of Composite Channels for Optimized Transport in Nitride Devices Y7.9
  Authors: Madhusudan Singh, Jasprit Singh, and Umesh K. Mishra


• Experimental Analysis and a New Theoretical Model for Anomalously High Ideality Factors (n >> 2.0) in GaN-Based p-n Junction Diodes Y7.11
  Authors: Jay M. Shah, Yunli Li, Thomas Gessmann, and E. Fred Schubert


• Electrical and Optical Properties of Carbon Doped Cubic GaN Epilayers Grown Under Extreme Ga Excess Y8.2
  Authors: D.J. As, D.G. Pacheco-Salazar, S. Potthast, and K. Lischka


• Above and Below Bandgap Excitation of Er-Defect Complexes and Isolated Er in Er-Implanted GaN Y8.3
  Authors: A. Braud, M. Abouzaid, M. Wojdak, J.L. Doualan, R. Moncorge, B. Pipeleers, and A. Vantomme


• Modulation of Arsenic Incorporation in GaN Layers Grown by Molecular Beam Epitaxy Y8.4
  Authors: S.V. Novikov, L.X. Zhao, C.T. Foxon, B.Ja. Ber, A.P. Kovarsky, I. Harrison, M.W. Fay, and P.D. Brown


• Optical Properties of Mn-Doped GaN Y8.5
  Authors: O. Gelhausen, E. Malguth, M.R. Phillips, E.M. Goldys, M. Strassburg, A. Hoffmann, T. Graf, M. Gjukic, and M. Stutzmann


• Magnetic Properties of Mn-Doped GaN, InGaN, and AlGaN Y8.6
  Authors: M.L. Reed, E.A. Berkman, M.J. Reed, F.E. Arkun, T. Chikyow, S.M. Bedair, J.M. Zavada, and N.A. El-Masry


• Mg Doped GaN Using A Valved, Thermally Energetic Source: Enhanced Incorporation, Control and Quantitative Optimization Y8.11
  Authors: Shawn D. Burnham, W. Alan Doolittle, Gon Namkoong, and Walter Henderson


• Epitaxy of Highly Optical Efficient GaN on O and Zn Face ZnO Y9.1
  Authors: Xing Gu, Michael A. Reshchikov, Lei He, Ali Teke, Feng Yun, Daniel K. Johnstone, Bill Nemeth, Jeff Nause, and Hadis Morkoç


• Structural and Optical Characterization of InGaN Layers Grown by MOMBE Y9.2
  Authors: P. Singh, J. Aderhold, J. Graul, V.Yu. Davydov, F. Gourbilleau, and P. Ruterana


• The Structure of Dislocations in GaN Grown by MBE as a Function of the Gallium to Nitrogen Ratio Y9.3
  Authors: Marcus Q. Baines, David Cherns, Sergei V. Novikov, Michael J. Manfra, and C. Thomas Foxon


• Combined MOCVD and MBE Growth of GaN on Porous SiC Y9.6
  Authors: Ashutosh Sagar, R.M. Feenstra, C.K. Inoki, T.S. Kuan, and D.D. Koleske


• Atomic Structure of Defects in GaN:Mg Grown with Ga Polarity Y9.7
  Authors: Z. Liliental-Weber, T. Tomaszewicz, D. Zakharov, J. Jasinski, M.A. O'Keefe, S. Hautakangasa, A. Laaksoa, and K. Saarinena


• Influence of Growth Parameters on the Deep Level Spectrum in MBE-Grown n-GaN Y9.8
  Authors: A.R. Arehart, C. Poblenz, B. Heying, J.S. Speck, U.K. Mishra, S.P. DenBaars, and S.A. Ringel


• Emission Mechanisms in UV Emitting GaN/AlN Multiple Quantum Well Structures Y10.5
  Authors: Madalina Furis, Alexander N. Cartwright, Hong Wu, and William J. Schaff


• Reduction of Dark Current in AlGaN/GaN Schottky Barrier Photodetectors With a Low-Temperature-Grown GaN Cap Layer Y10.11
  Authors: G.C. Chi, J.K. Sheu, M. L. Lee, C.J. Kao, Y.K. Su, S.J. Chang,and W.C. Lai


• Proposal to Use GaAs(114) Substrates for Improvement of the Optical Transition Probability in Nitride Semiconductor Quantum Wells Y10.12
  Authors: Mitsuru Funato, Yoshinobu Kawaguchi, and Shigeo Fujita


• Wafer-Fused n-AlGaAs/p-GaAs/n-GaN Heterojunction Bipolar Transistor With uid-GaAs Base-Collector Setback Y10.20
  Authors: Sarah Estradai, James Champlain, Chad Wang, Andreas Stonas, Larry Coldren, Steven DenBaars, Umesh Mishra, and Evelyn Hu


• Design and Fabrication of GaN-Based Permeable-Base Transistors Y10.21
  Authors: Jasper S. Cabalu, Liberty L. Gunter, Ian Friel, Anirban Bhattacharyya, Yuri Fedyunin, Kanin Chu, Enrico Bellotti, Charles Eddy, and Theodore D. Moustakas


• High Electron Mobility in AlGaN/GaN HEMT Grown On Sapphire: Strain Modification By Means of AlN Interlayers Y10.22
  Authors: Marianne Germain, Maarten Leys, Steven Boeykens, Stefan Degroote, Wenfei Wang, Dominique Schreurs, Wouter Ruythooren, Kang-Hoon Choi, Benny Van Daele, Gustaaf Van Tendeloo, and Gustaaf Borghs


• Delta-Doped AlGaN/GaN Heterostructure Field-Effect Transistors With Incorporation of AlN Epilayers Y10.23
  Authors: Z.Y. Fan, M.L. Nakarmi, J.Y. Lin, and H.X. Jiang


• LP-MOCVD Growth of GaAlN/GaN Heterostructures on Silicon Carbide: Application to HEMT's Devices Y10.26
  Authors: M-A. di Forte Poisson, M. Magis, M. Tordjman, R. Aubry, M. Peschang, S.L. Delage, J. di Persio, B. Grimbert, V. Hoel, E. Delos, D. Ducatteau, and C. Gaquiere


• Growth and Characterization of Epitaxial GaN Thin Films on 4H-SiC (11.0) Substrates Y10.34
  Authors: Brian P. Wagner, E.A. Preble, Z.J. Reitmeier, R.F. Davis, D.N. Zakharov, and Z. Liliental-Weber


• Thermal Conductivity of GaN Grown on Silicon Substrates Y10.35
  Authors: C. Mion, Y.C. Chang, J. F. Muth, P. Rajagopal, J. D. Brown


• Growth of Crack-Free GaN on AlN Quantum Dots on Si(111) Substrates by MOCVD Y10.36
  Authors: W.H. Sun, J.L. Chen, L.S. Wang, and S.J. Chua


• MOCVD AlGaN/GaN HFET's Material Optimization and Devices Characterization Y10.39
  Authors: Alexander Demchuk, Don Olson, Dan Olson, Minseub Shin, and Gordon Munns


• Arsenic Incorporation Behavior in Nitrogen-rich GaNAs Alloys Synthesized by Metalorganic Chemical Vapor Deposition (MOCVD) Y10.41
  Authors: M. Gherasimova, R.G. Wheeler, L.J. Guido, K.L. Chang, and K.C. Hsieh


• A Study of Elemental Interdiffusion in GaN/Si Wafer Grown by Metalorganic Vapor Phase Epitaxy Y10.42
  Authors: X. Chen, M. Ishiko, Y. Kuroiwa, and N. Sawaki


• Growth and Characterization of AlN and GaN Thin Films Deposited on Si(111) Substrates Containing a Very Thin Al Layer Y10.43
  Authors: Zachary J. Reitmeier and Robert F. Davis


• Investigation of Molecular Co-Doping for Low Ionization Energy p-type Centers in (Ga,Al)N Y10.44
  Authors: Zhe Chuan Feng, Adam M. Payne, David Nicol, Paul D. Helm, and Ian Ferguson


• Real-Time Optical Monitoring of Gas Phase Dynamics for the Growth of InN at Elevated Pressures Y10.45
  Authors: N. Dietz, H. Born, M. Strassburg, and V. Woods


• Recombination Related to Two-Dimensional Electron Gas of Al_xGa_1-xN/GaN Single Heterostructures Studied With Picosecond Time-Resolved Photoluminescence Y10.47
  Authors: Qing Yang, Rob Armitage, Eicke R. Weber, Ronald Birkhahn, David Gotthold, Shiping Guo, and Brian Albert


• Novel Method for the Activation of Acceptor Dopant in AlN Introducing Localized Band by Isoelectronic Dopant Y10.49
  Authors: Toshiyuki Takizawa


• Evidence of Strong Indium Segregation in MOCVD In_xGa_1-xN/GaN Quantum Layers Y10.55
  Authors: Grzegorz Maciejewski, Grzegorz Jurczak, Slawomir Kret, Pawel Dluzewski , and Pierre Ruterana


• Fabrication of Thermoelectric Devices Using AlInN and InON Films Prepared by Reactive Radio-Frequency Sputtering Y10.56
  Authors: S. Yamaguchi, R. Izaki, N. Kaiwa, S. Sugimura, and A. Yamamoto


• Synthesis and Characterization of High Quality Ferromagnetic Cr-Doped GaN and AlN Thin Films With Curie Temperatures Above 900K Y10.57
  Authors: Stephen Y. Wu, H.X. Liu, Lin Gu, R.K. Singh, M. van Schilfgaarde, David J. Smith, N.R. Dilley, L. Montes, M.B. Simmonds, and N. Newman


• Thermal Activation of Beryllium in GaN Grown by RF-Plasma Molecular Beam Epitaxy Y10.59
  Authors: B.L. VanMil, Kyoungnae Lee, Lijun Wang, N.C. Giles, and T.H. Myers


• MBE Grown AlN Films on SiC for Piezoelectric MEMS Sensors Y10.61
  Authors: Dharanipal Doppalapudi, Richard Mlcak, Jeffrey Chan, Harry Tuller, Anirban Bhattacharya, and Theodore Moustakas


• Effect of Buffer Design on AlGaN/AlN/GaN Heterostrucutres by MBE Y10.62
  Authors: Gon Namkoong, W. Alan Doolittle, A.S. Brown, M. Losurdo, M.M. Giangregorio, and G. Bruno


• GaN Layers Re-Grown on Etched GaN Templates by Plasma Assisted Molecular Beam Epitaxy Y10.64
  Authors: L. He, X. Gu, J. Xie, F. Yun, A.A. Baski, and H. Morkoç


• Surface Control of ZrB₂ (0001) Substrate for Molecular-Beam Epitaxy of GaN Y10.65
  Authors: Jun Suda, Hiroyasu Yamashita, Robert Armitage, Tsunenobu Kimoto, and Hiroyuki Matsunami


• The Influence of Substrate Polarity on the Blue Emission From As-Doped GaN Layers Grown by Molecular Beam Epitaxy Y10.66
  Authors: S.V. Novikov, L.X. Zhao, C.T. Foxon, I. Harrison, R.P. Campion, C.R. Staddon, S.W. Kang, O. Kryliouk, and T. Anderson


• GaN Epitaxial Growth Process at High Growth Temperature by NH₃ Source Molecular Beam Epitaxy Y10.67
  Authors: Naoki Ohshima, Akihiro Sugihara, Naoya Yoshida, and Naohiko Okabe


• Structural Characterization of Low-Temperature InN Buffer Layer Grown by RF-MBE Y10.68
  Authors: T. Araki and Y. Nanishi


• Characterization of Photovoltaic Cells Using n-InN/p-Si Grown by RF-MBE Y10.71
  Authors: Chiharu Morioka, Tomohiro Yamaguchi, Hiroyuki Naoi, Tsutomu Araki, Akira Suzuki, and Yasushi Nanishi


• Properttiies off Cruciiblle Matteriialls ffor Bullk Growtth off AllN Y10.74
  Authors: Glen A. Slack, Jon Whitlock, Ken Morgan, and Leo J. Schowalter


• Synthesis, Structure and Luminescence of High Brightness Gallium Nitride Powder Y10.75
  Authors: R. Garcia, A. Thomas, A. Bell, M. Stevens, and F.A. Ponce


• Gate Leakage Suppression and Contact Engineering in Nitride Heterostructures Y11.1
  Authors: Yuh-Renn Wu, Madhusudan Singh, and Jasprit Singh


• Influence of Metal Thickness to Sensitivity of Pt/GaN Schottky Diodes for Gas Sensing Applications Y11.5
  Authors: V. Tilak, M. Ali, V. Cimalla, V. Manivannan, P. Sandvik, J. Fedison, O. Ambacher, D. Merfeld


• Laser Diode Facet Degradation Study Y11.10
  Authors: Ulrich T. Schwarz, Thomas Schoedl, V. Kümmler, A. Lell, and V. Härle


• Band-GaP Energy and Physical Properties of InN Grown by RF-Molecular Beam Epitaxy Y12.1
  Authors: Yasushi Nanishi, Yoshiki Saito, Tomohiro Yamaguchi, Fumie Matsuda, Tsutomu Araki, Hiroyuki Naoi, Akira Suzuki, Hiroshi Harima, and Takao Miyajima


• Optical and Microstructural Characterisation of InN Grown by PAMBE on (0001) Sapphire and (001) YSZ Y12.3
  Authors: P.A. Anderson, C.E. Kendrick, T.E. Lee, W. Diehl, R.J. Reeves, V.J. Kennedy, A. Markwitz, R.J. Kinsey , and S.M. Durbin


• Temperature Dependence of the Optical Properties for InN Films Grown by RF-MBE Y12.5
  Authors: Y. Ishitani, K. Xu, W. Terashima, H. Masuyama, M. Yoshitani, N. Hashimoto, S.B. Che, and A. Yoshikawa


• Growth of Non-Polar a-Plane and Cubic InN on r-Plane Sapphire by Molecular Beam Epitaxy Y12.6
  Authors: Hai Lu, William J. Schaff, Lester F. Eastman, Volker Cimalla, Joerg Pezoldt, Oliver Ambacher, J. Wu, and Wladek Walukiewicz


• Optical and Electrical Properties of Low to Highly-Degenerate InN Films Y12.7
  Authors: D.B. Haddad, H. Dai, R. Naik, C. Morgan, V.M. Naik, J.S. Thakur, G.W. Auner, L.E. Wenger, H. Lu, and W.J. Schaff


• Study of the growth mechanism and properties of InN films grown by MOCVD Y12.8
  Authors: Abhishek Jain and Joan M. Redwing


• Pressure Dependence of Optical Transitions in In-Rich Group III-Nitride Alloys Y12.9
  Authors: S.X. Li, J. Wu, W. Walukiewicz, W. Shan, E.E. Haller, Hai Lu, and William J. Schaff


• N-Rich GaNAs With High As Content Grown by Metalorganic Vapor Phase Epitaxy Y12.10
  Authors: Akitaka Kimura, H.F. Tang, C.A. Paulson, and T.F. Kuech