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 April, 2010 -- Beyond Silicon: Carbon-Based Nanotechnology

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 Volume 1270
Editors: V.R. Bommisetty, N.S. Sariciftci, K. Narayan, G. Rumbles, P. Peumans, J. van de Lagemaat, G. Dennler, S.E. Shaheen
ISBN: 978-1-60511-247-3
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 Volume 1268
Editors: D. Friedman, M. Stavola, W. Walukiewicz, S. Zhang
ISBN: 978-1-60511-245-9
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 Volume 1258
Editors: H. Riel, W. Lee, M. Zacharias, M. McAlpine, T. Mayer, H. Fan, M. Knez, S. Wong
ISBN: 978-1-60511-235-0
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 Volume 1252
Editors: C. Bonafos, Y. Fujisaki, P. Dimitrakis, E. Tokumitsu
ISBN: 978-1-60511-227-5
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 Volume 1250
Editors: C. Bonafos, Y. Fujisaki, P. Dimitrakis, E. Tokumitsu
ISBN: 978-1-60511-226-8
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 Volume 1249
Editors: J.W. Bartha, C.L. Borst, D. DeNardis, H. Kim, A. Naeemi, A. Nelson, S.S. Papa Rao, H.W. Ro, D. Toma
ISBN: 978-1-60511-226-8
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 Volume 1246
Editors: S.E. Saddow, E. Sanchez, F. Zhao, M. Dudley
ISBN: 978-1-60511-223-7
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 Volume 1245
Editors: Q. Wang, B. Yan, S. Higashi, C.C. Tsai, A. Flewitt
ISBN: 978-1-60511-222-0
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 Volume 1224
Editors: J. Lou, E. Lilleodden, B. Boyce, L. Lu, P.M. Derlet, D. Weygand, J. Li, M.D. Uchic, E. Le Bourhis
ISBN: 978-1-60511-197-1
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• printer-friendly

Author(s):
William J. Taylor, Michael J. Rendon, Eric Verret, Jack Jiang, Cristiano Capasso, Dave Sing, Jen-Yee Nguyen, James Smith, Eric Luckowski, Arturo Martinez, Jamie Schaeffer, Phil Tobin

Parasitic resistances on MOSFETs are addressed, with respect to ITRS guidelines. Extension abruptness and junction depth, as well as contact resistance, are discussed in detail.

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Paper #: C1.1
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