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• Grown-in and Radiation-Induced Defects in 4HSiC E1.2
  Authors: T.A.G. Eberlein, R. Jones, P.R. Briddon, S. Oberg


• A study of V³⁺ and the vanadium acceptor level in semi-insulating 6H-SiC E1.3
  Authors: Wonwoo Lee, Mary E. Zvanut


• Role of the Substrate Doping in the Activation of Fe²⁺ Centers in Fe Implanted InP E1.5
  Authors: T. Cesca, A. Gasparotto, G. Mattei, A. Verna, B. Fraboni, G. Impellizzeri, F. Priolo


• Growth and Electrical Properties of ZnO Grown by Closed Space Vapor Transport on Sapphire Substrates E1.6
  Authors: J. Mimila-Arroyo, J.F. Rommeluère, M. Barbé, F. Jomard, A. Tromson-Carli, O. Gorochov, Y. Marfaing, P. Galtier


• Pt_s-O_i Complex Formation in Platinum Diffused Silicon E2.3
  Authors: Wilfried Vervisch, Laurent Ventura, Bernard Pichaud, Gérard Ducreux, André Lhorte


• Experimental Observation of Formation Processes in Si/SiO₂ Interface Defects using in-situ UHV-ESR System E3.1
  Authors: N. Mizuochi, W. Futako, and S. Yamasaki


• Efficient Detection of Oxygen Vacancy Double Donors in Capacitors with Ultra-Thin Ta₂O₅ Films for DRAM Applications by Zero-Bias Thermally Stimulated Current Spectroscopy E3.2
  Authors: W.S. Lau, L. Zhong, Taejoon Han, Nathan P. Sandler


• Investigation of GaNAsSb/GaAs and GaInNAsSb/GaNAs/GaAs Band Offsets E3.3
  Authors: Homan B. Yuen, Robert Kudrawiec, K. Ryczko, S.R. Bank, M.A. Wistey, H.P. Bae, J. Misiewicz, J.S. Harris Jr.


• Ultra-Shallow Junctions for the 65nm Node Based on Defect and Stress Engineering E3.5
  Authors: Victor Moroz, Majeed Foad, Houda Graoui, Faran Nouri, Dipu Pramanik, Susan Felch


• N+/P and P+/N Junctions in Strained Si on Thin Strain Relaxed SiGe Buffers: the Effect of Defect Density and Layer Structure E3.7
  Authors: G. Eneman, E. Simoen, R. Delhougne, P. Verheyen, M. Ries, R. Loo, M. Caymax, W. Vandervorst, K. De Meyer


• Morphology, Defects and Thermal Stability of SiGe Grown on SOI E3.8
  Authors: Qianghua Xie, Mike Kottke, Xiangdong Wang, Mike Canonico, Ted White, Bich-Yen Nguyen, Alex Barr, Shawn Thomas, Ran Liu


• Characterization of Ultrathin Strained-Si Channel Layers of n-MOSFETs Using Transmission Electron Microscopy E3.9
  Authors: Dalaver H. Anjum, Jian Li, Guangrui Xia, Judy L. Hoyt, Robert Hull


• Chromium Diffusion Doping of Commercial ZnSe and CdTe Windows for Mid-Infrared Solid-State Laser Applications E4.1
  Authors: U. Hömmerich, I.K. Jones, EiEi Nyein, S.B. Trivedi


• Structural Characterization of GaN Epilayers Grown on Patterned Sapphire Substrates E4.8
  Authors: Chang-Soo Kim, Ji-Hyun Moon, Sang-Jun Lee, Sam-Kyu Noh, Je Won Kim, Kyuhan Lee, Yong Dae Choi, Jay P. Song


• Structural and Optical Properties of Thin Metal-Oxide Films (ZnO and SnO_x) Deposited on Glass and Silicon Substrates E4.10
  Authors: Serekbol Zh. Tokmoldin, Bulat N. Mukashev, Nurzhan B. Beisenkhanov, Azamat B. Aimagambetov, Irina V. Ovcharenko


• Transmission Electron Microscopy Study of Nonpolar a-Plane GaN Grown by Pendeo-Epitaxy on (1120) 4H-SiC E4.14
  Authors: D.N. Zakharov, Z. Liliental-Weber, B. Wagner, Z.J. Reitmeier, E.A. Preble, R.F. Davis


• Defect Characterization of CdTe Bulk Crystals Doped with Heavy Elements and Rare Earths E4.18
  Authors: Svetlana Neretina, N.V. Sochinskii, Peter Mascher, E. Saucedo


• Compositional Changes in the Infrared Optical Properties of Cr Doped CdZnTe Crystals E4.19
  Authors: U. Hömmerich, A.G. Bluiett, EiEi Nyein, S.B. Trivedi, R.T. Shah


• Various Methods to Reduce Defect States in Tantalum Oxide Films for DRAM Applications E4.22
  Authors: W.S. Lau, G. Zhang, L.L. Leong, P.W. Qian, Taejoon Han, J. Das, Nathan P. Sandler, P.K. Chu


• Point Defects Interaction with Extended Defects and Impurities and its influence on the Si-SiO₂ System properties E4.24
  Authors: D. Kropman, U. Abru, T. Kärner, U. Ugaste, E. Mellikov, M. Kauk, I. Heinmaa, A. Samoson


• Modelling the MOS Device Conductance Using an Extended Tunnelling Model and Subsequent Determination of Interface Traps. E4.25
  Authors: N. Konofaos


• Solid Phase Recrystallization and Strain Relaxation in Ion-Implanted Strained Si on SiGe Heterostructures E4.28
  Authors: M.S. Phen, R.T. Crosby, V. Craciun, K.S. Jones, M.E. Law, J.L. Hansen, A.N. Larsen


• Si₃H₈ Based Epitaxy of Biaxially Stressed Silicon Films Doped with Carbon and Arsenic for CMOS Applications E4.30
  Authors: M. Bauer, S. Zollner, N.D. Theodore, M. Canonico, P. Tomasini, B.-Y. Nguyen, C. Arena


• Transmission Electron Microscopic Studies of Strained Si CMOS E4.31
  Authors: Qianghua Xie, Peter Fejes, Mike Kottke, Xiangdong Wang, Mike Canonico, David Theodore, Ted White, Mariam Sadaka, Victor Vartanian, Aaron Thean, Bich-Yen Nguyen, Alex Barr, Shawn Thomas, Ran Liu


• Device Parametric Shift Mechanism Caused by Boron Halo Redistribution Resulting from Dose Rate Dependence of SDE Implant E4.32
  Authors: Ukyo Jeong, Jinning Liu, Baonian Guo, Kyuha Shim, Sandeep Mehta


• Impact of Small Miscuts of (0001) Sapphire on the Growth of Al_xGa_1-xN /AlN E4.34
  Authors: Zheng Gong, Wenhong Sun, Jianping Zhang, Mikhail E. Gaevski, Hongmei Wang, Jinwei Yang, M. Asif Khan


• Radiative Versus Nonradiative Decay Processes in Germanium Nanocrystals Probed by Time-resolved Photoluminescence Spectroscopy E4.36
  Authors: P.K. Giri, R. Kesavamoorthy, B.K. Panigrahi, K.G.M. Nair


• Direct Measurement of Ion Beam Induced, Nanoscale Roughening of GaN E4.37
  Authors: Bentao Cui, P.I. Cohen


• Elastic Stress Relaxation at Nanoscale: A Comprehensive Theoretical and Experimental Investigation of the Dislocation Loops Associated with As-Sb Nanoclusters in GaAs E4.38
  Authors: V.V. Chaldyshev, A.L. Kolesnikova, N.A. Bert, A.E. Romanov


• Infrared Spectroscopy of Impurities in ZnO Nanoparticles E4.40
  Authors: W.M. Hlaing Oo, M.D. McCluskey


• Electrical Transient Based Defect Spectroscopy in Polymeric and Organic Semiconductors E5.1
  Authors: Y.N. Mohapatra, V. Varshney, V. Rao, Samarendra P. Singh, G.S. Samal


• Towards the routine fabrication of P in Si nanostructures: Understanding P precursor molecules on Si(001) E5.4
  Authors: Steven R. Schofield, Neil J. Curson, Oliver Warschkow, Nigel A. Marks, Hugh F. Wilson, Michelle Y. Simmons, Phillip V. Smith, Marian W. Radny, David R. McKenzie


• Effect of ohmic contacts on polysilicon memory effect E5.6
  Authors: S.B. Herner, C. Jahn, D. Kidwell


• Analysis of Nanoscale Deformation in GaAs(100): Towards Patterned Growth of Quantum Dots E5.7
  Authors: Curtis R. Taylor, Eric A. Stach, Ajay P. Malshe, Gregory Salamo


• Electronically Stimulated Degradation of Crystalline Silicon Solar Cells E6.1
  Authors: J. Schmidt, K. Bothe, D. Macdonald, J. Adey, R. Jones, D.W. Palmer


• Efficiency Limitations of Multicrystalline Silicon Solar Cells Due to Defect Clusters E6.2
  Authors: Bhushan Sopori, Chuan Li, S. Narayanan, D. Carlson


• Silicon Wafer Defect Self-Characterization with CCD Image Sensors E6.3
  Authors: William C. McColgin, Alexa M. Perry, Dean J. Seidler, James P. Lavine


• Silicon Light Emissions from Boron Implant-Induced Extended Defects E6.4
  Authors: G.Z. Pan, R.P. Ostroumov, L.P. Ren, Y.G. Lian, K.L. Wang


• Conductivity Enhancement in Thin Silicon-on-Insulator Layer Embedding Artificial Dislocation Network E6.5
  Authors: Yasuhiko Ishikawa, Kazuaki Yamauchi, Chihiro Yamamoto, Michiharu Tabe


• Silicon Single-Electron Pump and Turnstile: Interplay with Crystalline Imperfections E6.7
  Authors: Yukinori Ono, Akira Fujiwara, Yasuo Takahashi, Hiroshi Inokawa


• A Comparison of Lattice-Matched GaInNAs And Metamorphic InGaAs Photodetector Devices E6.9
  Authors: David B. Jackrel, Homan B. Yuen, Seth R. Bank, Mark A. Wistey, Xiaojun Yu, Junxian Fu, Zhilong Rao, James S. Harris Jr.


• A Novel Method to Synthesize Blue-luminescent Doped GaN Powders E6.10
  Authors: R. Garcia, A. Thomas, A. Bell, F.A. Ponce


• Low Temperature B Activation in SOI Using Optimised Vacancy Engineering Implants E7.1
  Authors: A.J. Smith, B. Colombeau, N. Bennett, R. Gwilliam, N. Cowern, B. Sealy


• Bubbles and Cavities Induced by Rare Gas Implantation in Silicon Oxide E7.3
  Authors: E. Ntsoenzok, H. Assaf, M.O. Ruault


• Defects Induced by Helium Implantation: Impact on Boron Diffusivity E7.4
  Authors: F. Cayrel, D. Alquier, C. Dubois, R. Jerisian


• Roles of Impurities and Implantation Depth on He⁺-Cavity Shape in Silicon E7.5
  Authors: Gabrielle Regula, Rachid El Bouayadi, Maryse Lancin, Esidor Ntsoenzok, Bernard Pichaud, Marie-Odile Ruault


• Clustering Analysis in Boron and Phosphorus Implanted (100) Germanium by X-Ray Absorption Spectroscopy E7.8
  Authors: M. Alper Sahiner, Parviz Ansari, Malcolm S. Carroll, C.A. King, Y.S. Suh, R.A. Levy, Temel Buyuklimanli, Mark Croft


• Electronic and Optical Properties of Energetic Particle-Irradiated In-rich InGaN E7.10
  Authors: S.X. Li, K.M. Yu, R.E. Jones, J. Wu, W. Walukiewicz, J.W. Ager III, W. Shan, E.E. Haller, Hai Lu, William J. Schaff, W. Kemp


• Controlled Growth of ZnO films on Si Substrate and N-doping Behavior E7.11
  Authors: Y.F. Mei, Ricky K.Y. Fu, R.S. Wang, K.W. Wong, H.C. Ong, L. Ding, W.K. Ge, G.G. Siu, Paul K. Chu


• Mutual Passivation in Dilute GaN_xAs_1-x Alloys E8.1
  Authors: K.M. Yu, W. Walukiewicz, J. Wu, D.E. Mars, M.A. Scarpulla, O.D. Dubon, M.C. Ridgway, J.F. Geisz


• Determination of Diffusivities of Si Self-Diffusion and Si Self-Interstitials using Isotopically Enriched Single- or Multi-³⁰Si Epitaxial Layers E8.4
  Authors: S. Matsumoto, S.R. Aid, T. Sakaguchi, K. Toyonaga, Y. Nakabayashi, M. Sakuraba, Y. Shimamune, Y. Hashiba, J. Murota, K. Wada, T. Abe


• Role of Interstitials in As TED and Clustering in Crystalline Silicon E8.5
  Authors: Scott A. Harrison, Thomas F. Edgar, Gyeong S. Hwang


• Effects of Silicon Nitride Passivation Layer on Mean Dark Current and Quantum Efficiency of CMOS Active Pixel Sensors E8.6
  Authors: D. Benoit, P. Morin, M. Cohen, P. Bulkin, J.L. Regolini


• Diffusion of Fluorine-Silicon Interstitial Complex in Crystalline Silicon E9.1
  Authors: Scott A. Harrison, Thomas F. Edgar, Gyeong S. Hwang


• A New Post Annealing Method for AlGaN/GaN Heterostructure Field-Effect Transistors Employing XeCl Excimer Laser Pulses E9.2
  Authors: Min-Woo Ha, Seung-Chul Lee, Joong-Hyun Park, Kwang-Seok Seo, Min-Koo Han


• Fabrication of Silicon Carbide PIN Diodes by Laser Doping and Planar Edge Termination by Laser Metallization E9.3
  Authors: Z. Tian, N.R. Quick, A. Kar


• Nanoindentation as a Tool for Formation of Thin Film-Based Barrier Structures E9.4
  Authors: H. Khlyap, P. Sydorchuk


• Thermal growth of He-cavities in Si studied by cascade implantation E9.7
  Authors: E. Ntsoenzok, R. El Bouayadi, G. Regula, B. Pichaud, S. Ashok


• Blistering and Splitting in Hydrogen-Implanted Silicon E9.8
  Authors: E. Ntsoenzok, H. Assaf, S. Ashok


• The Role of Surface Annihilation in Annealing Investigated by Atomic Model Simulation E9.9
  Authors: Min Yu, Xiao Zhang, Ru Huang, Xing Zhang, Yangyuan Wang, Jinyu Zhang, Hideki Oka


• The Electrical Phenomena of Non-Planar Structures and Devices using Plasma Doping E9.15
  Authors: Jong-Heon Yang, In-Bok Baek, Kiju Im, Chang-Geun Ahn, Sungkweon Baek, Won-ju Cho, Seongjae Lee


• Theoretical Investigation of Formation of (n-n⁺)-Junction in the Ion-implanted Crystalline Matrix E9.16
  Authors: R. Peleshchak, O. Kuzyk, H. Khlyap


• Barrier to migration of the intrinsic defects in silicon in different charged system using First-principles calculations E9.17
  Authors: Jinyu Zhang, Yoshio Ashizawa, Hideki Oka


• Impacts of Back Surface Conditions on the Behavior of Oxygen in Heavily Arsenic Doped Czochralski Silicon Wafers E9.18
  Authors: Q. Wang, Manmohan Daggubati, Hossein Paravi, Rong Yu, Xiao Feng Zhang


• Influence of Oxygen Vacancies and Strain on Electronic Reliability of SiO_2-x Films. E9.19
  Authors: Ken Suzuki, Yuta Ito, Hideo Miura, Tetsuo Shoji


• General Model of Diffusion of Interstitial Oxygen in Silicon and Germanium Crystals E9.20
  Authors: Vasilii Gusakov


• Contact Free Defect Investigation in As-Grown Fe Doped SI-InP E9.21
  Authors: Sabrina Hahn, Kay Dornich, Torsten Hahn, Bianca Gründig-Wendrock, Jürgen R. Niklas, Peter Schwesig, Georg Müller


• Ab initio studies of electronic structure of defects in PbTe E9.23
  Authors: Salameh Ahmad, Daniel Bilc, S.D. Mahanti, M.G. Kanatzidis


• μ-Raman Spectra Analysis of the Evolution of Hydrogen Related Defects and Void Formation in the Silicon Ion-Cut Process E9.25
  Authors: W. Düngen, R. Job, Y. Ma, Y. L. Huang, W.R. Fahrner, L.O. Keller, J.T. Horstmann


• P-N Junction Diodes Fabricated Based on Donor Formation in Plasma Hydrogenated P-Type Czochralski Silicon E9.26
  Authors: Y.L. Huang, E. Simoen, R. Job, C. Claeys, W. Düngen, Y. Ma, W. R. Fahrner, J. Versluys, P. Clauws


• Hydrogen Diffusion in Boron-Doped Hydrogenated Amorphous Silicon Films: Crystallization and Induced Structural Changes E9.27
  Authors: F. Kail, A. Hadjadj, P. Roca i Cabarrocas


• Mechanism of Dopant Activation Enhancement in Shallow Junctions by Hydrogen E9.28
  Authors: A. Vengurlekar, S. Ashok, Christine E. Kalnas, Win Ye


• Hydrogen Ion Implantation Caused Defect Structures in Heavily Doped Silicon Substrates E9.29
  Authors: Minhua Li, Q. Wang


• Effect of Deuterium Diffusion on the Electrical Properties of AlGaN/GaN Heterostructures E9.31
  Authors: Jaime Mimila Arroyo, Michel Barbé, François Jomard, Dominique Ballutaud, Jacques Chevallier


• Effect of Substrate Orientation on the Growth Rate and Surface Morphology on GaSb Grown by Metal-organic Vapor Phase Epitaxy E9.33
  Authors: Jian Yu, Ishwara B. Bhat


• Photoelectron Emission Technique for the Surface Analysis of Silicon Wafer Covered with Oxide Film E9.34
  Authors: Takao Sakurai, Yoshihiro Momose, Masanori Kudou, Keiji Nakayama


• Identification and Characterization of Submicron Defects for Semiconductor Processing E9.35
  Authors: Wei Liu, Aime Fausz, John Svoboda, Brian Butcher, Rick Williams, Steve Schauer


• Thermal Transformation of Hydrogen Bonds in a-SiC:H Films: Structural and Optical Properties E9.37
  Authors: Andrey V. Vasin, Sergey P. Kolesnik, Andrey A. Konchits, Vladimir S. Lysenko, Alexey N. Nazarov, Andrey V. Rusavsky, S. Ashok


• Probing Process-induced Defects in Si Using Infrared Photoelastic Stress Measurement Technique E9.38
  Authors: X.H. Liu, S.P. Wong, H.J. Peng, N. Ke, Shounan Zhao


• Defect Reduction in Si-based Metal-Semiconductor-Metal Photodetectors with Cryogenic Processed Schottky Contacts E9.39
  Authors: M. Li, W.A. Anderson


• Optical and Electrical Characterization of Quantum Dot Infrared Photodetector Structure Treated with Hydrogen-Plasma E9.40
  Authors: H.D. Nam, J.D. Song, W.J. Choi, J.I. Lee, H.S. Yang


• Void Formation in Hydrogen Implanted and Subsequently Plasma Hydrogenated and Annealed Czochralski Silicon E10.2
  Authors: R. Job, W. Düngen, Y. Ma, Y.L. Huang, J.T. Horstmann


• Hydrogen Donors in ZnO E10.4
  Authors: M.D. McCluskey, S.J. Jokela, W.M. Hlaing Oo


• Three Dimensional Hydrogen Microscopy in Diamond E11.1
  Authors: Günther Dollinger, Patrick Reichart, Andreas Bergmaier, Andreas Hauptner, Christoph Wild


• Non destructive electrical defect characterisation and topography of silicon wafers and epitaxial layers E11.2
  Authors: K. Dornich, T. Hahn, J.R. Niklas


• A Pulsed EDMR Study of Charge Trapping at P_b Centers E11.3
  Authors: Christoph Boehme, Felice Friedrich, Klaus Lips